WO2008053729A1 - Capteur, dispositif de mesure et procédé de mesure - Google Patents

Capteur, dispositif de mesure et procédé de mesure Download PDF

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Publication number
WO2008053729A1
WO2008053729A1 PCT/JP2007/070528 JP2007070528W WO2008053729A1 WO 2008053729 A1 WO2008053729 A1 WO 2008053729A1 JP 2007070528 W JP2007070528 W JP 2007070528W WO 2008053729 A1 WO2008053729 A1 WO 2008053729A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
temperature
heater
gas
heating
Prior art date
Application number
PCT/JP2007/070528
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiteru Keikoin
Koji Honma
Original Assignee
Mems Core Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mems Core Co., Ltd. filed Critical Mems Core Co., Ltd.
Publication of WO2008053729A1 publication Critical patent/WO2008053729A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • G01L21/10—Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured

Definitions

  • the present invention relates to a sensor for measuring a gas pressure or the like, and further relates to a measuring device and a measuring method using the sensor.
  • the temperature difference detected by the two temperature detection elements is proportional to the gas type, pressure or flow rate of the gas in the chamber.
  • a sensor using the sensor is known. That is, one temperature detection element is arranged in the vicinity of the heater to detect the temperature of the heater and control the heater to a constant temperature. The other temperature detection element is placed in thermal contact with the gas and in contact with the gas to detect the temperature in the chamber. Based on the temperature difference detected by the two temperature detectors, the pressure of the gas in the chamber is measured by referring to the calibration curve data for the gas pressure in the chamber obtained in advance.
  • the temperature detection element thermally separated from the heater detects the temperature in the chamber
  • the temperature in the chamber fluctuates due to the water temperature of the chiller unit disposed outside the chamber, and the chamber
  • the gas type, pressure or flow rate of the gas inside may not be measured accurately.
  • An object of the present invention is to provide a sensor, a measuring device, and a measuring method capable of accurately measuring the gas type, pressure, or flow rate of a gas.
  • a semiconductor layer whose surface is in thermal contact with the gas to be measured, (a mouth) a heater for heating the semiconductor layer, and (c) a semiconductor layer A sensor that is embedded in the upper part and includes a temperature detection element that detects the temperature of the semiconductor layer before and after heating by a heater, and measures the gas type, pressure, or flow rate of the gas from the temperature difference of the semiconductor layer before and after heating.
  • the surface is in thermal contact with the gas to be measured.
  • a sensor having a semiconductor layer, a heater for heating the semiconductor layer, and a temperature detecting element embedded in the upper part of the semiconductor layer to detect the temperature of the semiconductor layer before and after heating by the heater; (mouth) the semiconductor layer before and after heating Is provided from a temperature detection element, and a measurement circuit is provided that calculates a gas type, pressure, or flow rate of the gas.
  • a step of heating a semiconductor layer whose surface is in thermal contact with a gas to be measured by a heater, and (mouth) of the semiconductor layer before and after heating by the heater A measurement method comprising a step of detecting a temperature by a temperature detection element embedded in the upper part of the semiconductor layer, and a step of converting the current or voltage from the detection element into a gas type, pressure, or flow rate of the gas.
  • the present invention it is possible to provide a sensor, a measuring apparatus, and a measuring method capable of accurately measuring the gas type, pressure, or flow rate of a gas.
  • FIG. 1 is a cross-sectional view showing an example of a sensor of a measuring apparatus according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing an example of a sensor of the measuring apparatus according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a mounting example of the sensor of the measuring apparatus according to the embodiment of the present invention.
  • FIG. 4 is a block diagram showing an example of a measuring apparatus according to an embodiment of the present invention.
  • FIG. 5 (a), FIG. 5 (b), and FIG. 5 (c) are graphs for explaining a measurement method according to an embodiment of the present invention.
  • FIG. 6 is a graph showing the relationship between the pressure according to the embodiment of the present invention and the temperature difference between the semiconductor layers before and after heating the heater.
  • FIG. 7 is a flowchart showing an example of a measurement method according to the embodiment of the present invention.
  • FIG. 1 shows a plan view of a sensor (sensor chip) 1 of a measuring apparatus according to an embodiment of the present invention
  • FIG. 2 shows a corresponding cross-sectional view.
  • Fig. 2 shows the cross-sectional structure of the sensor 1 shown in Fig. 1 as seen from the AA direction. Fig. 2 will be explained first.
  • the senor 1 includes a first conductive type (p-type) semiconductor layer (SOI layer) 13 whose surface is in thermal contact with the gas to be measured, and a semiconductor layer 13 A second conductive type (n + -type) semiconductor resistance region (heater) 131 that is embedded in the upper portion and heats the semiconductor layer 13; A temperature detection element (diode) D1 for detecting the temperature of the semiconductor layer 13 before and after heating by the semiconductor resistance region (heater) 131 is provided.
  • a first conductive type (p-type) semiconductor layer (SOI layer) 13 whose surface is in thermal contact with the gas to be measured, and a semiconductor layer 13
  • a second conductive type (n + -type) semiconductor resistance region (heater) 131 that is embedded in the upper portion and heats the semiconductor layer 13
  • a temperature detection element (diode) D1 for detecting the temperature of the semiconductor layer 13 before and after heating by the semiconductor resistance region (heater) 131 is provided.
  • Thermal contact means that the sensor 1 does not need to be in direct contact with the gas, but other thermal components that may be in contact with a sufficiently thin protective film so that the thermal resistance is negligible. This means that the resistance is small V, and it is in contact with the heat conduction band! /!
  • first conductivity type and the “second conductivity type” are opposite conductivity types. That is, if the first conductivity type is a force-type, the second conductivity type is p-type, and if the first conductivity type is p-type, the second conductivity type is n-type. Therefore, here, the case where the first conductivity type is p-type and the second conductivity type is n-type will be described as an example, but even if the first conductivity type is n-type and the second conductivity type is also p-type, It can be easily understood that the same effect can be obtained by reversing the electrical polarity.
  • the temperature detection element D1 includes an anode region 132 made of a first conductivity type (p + type) semiconductor and a second conductivity type (n + type) semiconductor formed around the anode region 132. It consists of a force sword region 1 33 consisting of
  • the semiconductor layer 13 is provided on a buried insulating film (BOX layer) 12 disposed on the support substrate 11.
  • BOX layer buried insulating film
  • silicon (Si) or the like can be used as a material for the support substrate 11 and the semiconductor layer 13.
  • the semiconductor resistance region 131 has openings in the field insulating film 14 such as a thermal oxide film (SiO film). To the heater electrodes 15a and 15d. The anode region 132 is connected to the sensor electrode 15 b through the opening of the field insulating film 14. The force sword region 133 is connected to the sensor electrode 15 c through the opening of the field insulating film 14.
  • Aluminum (A1) or the like can be used as a material for the heater electrodes 15a and 15d and the sensor electrodes 15b and 15c.
  • the semiconductor resistance region 131 forms a pn junction with the surrounding semiconductor layer 13 and is separated from the pn junction. If a current is passed through the heater electrodes 15a and 15d under a bias condition in which the pn junction is reverse-biased, a current can flow only in the semiconductor resistance region 131, and only the semiconductor resistance region 131 can be Joule heated. it can. A constant voltage is applied in the forward direction to the temperature detection element (diode) D1, and a current (current signal) corresponding to the temperature of the semiconductor layer 13 flows. This current signal, on-resistance change, rise voltage change (diffusion potential), or the like is detected as the temperature of the semiconductor layer 13.
  • an oxide film (SiO film) and a nitride film (SiN film) are formed on the field insulating film 14, the heater electrodes 15a and 15d, and the sensor electrodes 15b and 15c.
  • a protective film (passivation film) such as a PSG film.
  • the film thickness of the protective film is preferably thin enough that the thermal resistance can be ignored in consideration of sensor sensitivity.
  • the center and the periphery of sensor 1 are separated by a gap 17.
  • the peripheral portion is formed in a frame shape and is arranged so as to surround the periphery of the central portion.
  • the peripheral portion and the central portion are connected by a beam having a laminated structure including a BOX layer 12, a semiconductor layer 13, and a field insulating film 14 as shown in FIG.
  • heater electrodes 15a and 15d and sensor electrodes 15b and 15c extend on the field insulating film 14 of the beam.
  • the heater electrodes 15a and 15d are respectively connected to heater electrode pads 16a and 16d arranged in the peripheral portion.
  • the sensor electrodes 15b and 15c are connected to sensor electrode pads 16b and 16c arranged in the periphery, respectively.
  • the semiconductor resistance region 131 is arranged, for example, in an annular shape around the anode region 132 and the force sword region 133.
  • the sensor 1 is arranged in a chamber 2 that houses a gas to be measured.
  • the chamber 2 is filled with a gas force to be measured at a specific gas pressure, or flows at a specific gas flow rate.
  • the sensor 1 shown in FIGS. 1 and 2 is placed from the back side on the center of the lower surface of the package base 3 as shown in FIG.
  • the peripheral portion of the lower surface of the package base 3 is in contact with the peripheral portion of the opening of the chamber 2 via an O-ring 3a to form a sealed structure.
  • the package base 3 is fixed to the fixture 4 by a cylindrical suspension part (suspension ring) 41.
  • the fixture 4 is fixed to the fixing portion (fixing ring) 42 of the chamber 2 using the pressers 5a and 5b.
  • the heater electrodes 15a and 15d and the sensor electrodes 15b and 15c of the sensor 1 shown in FIGS. 1 and 2 are the same as those shown in FIG. 3 as the springs 8a, 8b, 8c, 8d, 9a, 9b, and the connector 6 Etc., and connected to the measurement circuit 10.
  • a chiller unit 7 is disposed outside the lower surface side of the chamber 2. The chiller unit 7 is supplied with water at a constant temperature to cool the chamber 2.
  • the measurement circuit 10 includes an operational amplifier 101 connected to the heater 131 and a timing generation unit 100 connected to the operational amplifier 101.
  • the timing generation unit 100 generates a driving noise for heating the heater 131.
  • the operational amplifier 101 receives the control signal CNT from the outside, amplifies the drive pulse from the timing generation unit 100, and transmits it to the heater 131.
  • the heater 131 heats the semiconductor layer 13 in accordance with the driving noise current.
  • Operational amplifiers 102 and 103 and an A / D converter 104 are sequentially connected to the temperature detection element D1.
  • the operational amplifier 102 converts a current signal or the like corresponding to the temperature of the semiconductor layer 13 detected by the temperature detection element D1 into a voltage signal.
  • the operational amplifier 103 amplifies the voltage signal from the operational amplifier 102 to a desired level.
  • a / D converter 104 force The analog voltage signal from the operational amplifier 103 is converted into a digital signal.
  • a pre-heating temperature storage unit (register) 105 and a post-heating temperature storage unit (register) 106 are connected to the output side of the A / D converter 104.
  • a temperature difference calculation unit 107 is connected to the pre-heating temperature storage unit 105 and the post-heating temperature storage unit 106.
  • a temperature difference storage unit 108 is connected to the temperature difference calculation unit 107, and a measurement unit 109 is connected to the temperature difference storage unit 108.
  • the pre-heating temperature storage unit 105 corresponds to the temperature of the semiconductor layer 13 before heating by the heater 131 in synchronization with the clock signal before heating from the timing generation unit 100 to the heater 131 A
  • the digital signal from the / D converter 104 is stored.
  • the post-heating temperature storage unit 106 synchronizes with the clock signal after heating from the timing generation unit 100 to the heater 131, and the digital signal from the A / D converter 104 corresponding to the temperature of the semiconductor layer 13 heated by the heater 131 is obtained. Stored signal.
  • the temperature difference calculation unit 107 stores the temperature of the semiconductor layer 13 before heating by the heater 131 stored in the pre-heating temperature storage unit 105 and the temperature of the semiconductor layer 13 after heating by the heater 131 stored in the post-heating temperature storage unit 106. The temperature is read, and the temperature difference of the semiconductor layer 13 before and after heating by the heater 131 is calculated.
  • the temperature difference storage unit 108 stores the temperature difference of the semiconductor layer 13 before and after heating by the heater 131 calculated by the temperature difference calculation unit 107 in synchronization with the clock signal generated from the timing generation unit 100.
  • the measurement unit 109 reads the temperature difference of the semiconductor layer 13 before and after heating by the heater 131 stored in the temperature difference storage unit 108, and refers to the calibration curve data acquired in advance to determine the gas pressure in the chamber 2 from the temperature difference. taking measurement.
  • An output unit 110 is connected to the temperature difference calculation unit 107.
  • the output unit 110 is a temperature difference storage unit.
  • the temperature difference stored in 108 is output.
  • the output unit 110 may display the temperature of the semiconductor layer 13 before and after the heating by the heater 131, the measured gas pressure in the chamber 2, and the like.
  • a liquid crystal display, a CRT display, an ink jet printer, a laser printer, or the like can be used as the output unit 110.
  • a display unit 111 is connected to the measurement unit 109.
  • the display unit 111 for example, a light emitting diode (LED) can be used.
  • the display unit 111 displays an LED in accordance with the gas pressure measured by the measuring unit 109 so that the gas pressure level can be known.
  • FIG. 5 (a) shows the timing of the drive pulse of the heater 131
  • FIG. 5 (b) shows the heat dissipation state of the heater 131 when the inside of the chamber 2 is at atmospheric pressure.
  • the temperature detection element D1 detects the temperature T11 of the semiconductor layer 13 before being heated by the heater 131, as shown in FIG.
  • the temperature T11 of the semiconductor layer 13 before being heated by the heater 131 is substantially equal to the temperature in the chamber 2.
  • a drive pulse is applied to the heater 131 as shown in FIG.
  • the drive pulse width Wp is about lms to 900ms, and the period is about lms to 900ms.
  • the temperature of the heater 131 rises as shown in FIG. 5 (b).
  • the temperature of the heater 131 decreases as shown in FIG. 5 (b).
  • the temperature detection element D1 detects the temperature T12 of the semiconductor layer 13 after being heated by the heater 131.
  • the temperature in the chamber 2 may change due to external influences such as the temperature of water supplied to the chiller unit 7. For this reason, the measurement of the temperature T11 of the semiconductor layer 13 before heating by the heater 131 detected at time tl means to measure the temperature resulting from this external influence.
  • the temperature T12 of the semiconductor layer 13 after being heated by the heater 131 detected at time t4 is also influenced by the outside, but it is obvious that this effect is the same as the result measured in advance by tl. .
  • the temperature difference ⁇ 1 between the temperature T11 of the semiconductor layer 13 before heating by the heater 131 detected at time tl and the temperature T12 of the semiconductor layer 13 after heating by the heater 131 detected at time t4 is It depends only on the pressure of the gas and is constant without being affected even if the temperature in chamber 2 changes. Therefore, the temperature difference calculation unit 107 calculates the temperature difference ⁇ 1, and the measurement unit 109 measures the pressure of the gas in the chamber 2 from the temperature difference ⁇ ⁇ 1, so it is correct without being affected by the temperature in the chamber 2. The gas pressure in the chamber 2 can be measured accurately. Further, after about lms to 20 ms has elapsed from time t4, the display unit 111 displays the measurement result as an LED.
  • FIG. 5 (c) shows the heat dissipation state of the heater 131 when the inside of the chamber 2 is in a reduced pressure state. Since the thermal conductivity is lower in the reduced pressure state than in the atmospheric pressure, the heater 131 releases heat gradually. As in the case of atmospheric pressure, the temperature T21 of the semiconductor layer 13 before heating by the heater 131 detected at time tl and the temperature T22 of the semiconductor layer 13 before heating by the heater 131 detected at time t4. The difference ⁇ 2 depends only on the gas pressure in the chamber 2 and is not affected independently of the temperature in the chamber 2.
  • FIG. 6 shows the temperature difference of the semiconductor layer 13 detected before and after heating by the heater 131 when the water temperature supplied to the chiller unit is changed at 25 ° C., 35 ° C., and 45 ° C.
  • the relationship with the gas pressure in chamber 2 is shown.
  • the temperature in the chamber 2 changes. From FIG. 6, it can be seen that the temperature difference of the semiconductor layer 13 before and after heating by the heater 131 is substantially constant regardless of the temperature change in the chamber 2 even if the temperature in the chamber 2 changes. I understand. It can also be seen that the temperature difference of the heater 131 is smaller as the gas pressure in the chamber 2 is higher. Therefore, referring to the calibration curve data of the gas pressure in the chamber 2 obtained in advance, the gas pressure in the chamber 2 is measured based on the temperature difference ⁇ , ⁇ 2 of the semiconductor layer 13 before and after heating by the heater 131. be able to.
  • step S 1 the temperature detection element D 1 detects the temperature of the semiconductor layer 13 whose surface is in thermal contact with the measurement target (gas) before being heated by the heater 131.
  • the detected temperature of the semiconductor layer 13 before heating by the heater 1 31 is stored in the pre-heating temperature storage unit 105.
  • step S2 a driving pulse is applied to the heater 131 to heat it and turn it off.
  • step S3 the temperature of the semiconductor layer 13 whose surface is in thermal contact with the object to be measured (gas) is detected by the temperature detection element D1 in the OFF state after heating by the heater 131 (heating) In the later off state, the temperature of the semiconductor layer 13 gradually decreases as shown in FIG.
  • the detected temperature of the semiconductor layer 13 after heating by the heater 131 is stored in the post-heating temperature storage unit 106.
  • step S 4 the temperature difference calculation unit 107 stores the temperature of the semiconductor layer 13 before heating by the heater 131 stored in the pre-heating temperature storage unit 105 and the post-heating temperature storage unit 106.
  • the temperature of the semiconductor layer 13 heated by the heater 131 is read, and the temperature difference of the semiconductor layer 13 before and after the heating by the heater 131 is calculated.
  • the calculated temperature difference is stored in the temperature difference storage unit 108.
  • step S 5 the measurement unit 109 reads the temperature difference stored in the temperature difference storage unit 108 and converts the pressure of the gas in the chamber 2 from the temperature difference.
  • the display unit 111 displays the measurement result as an LED.
  • the pressure of the gas in the chamber 2 is reduced without being affected by the temperature fluctuation in the chamber 2. It can be measured accurately.
  • the structure of the sensor 1 is simple and the size is small, the sensor 1 can be manufactured at a low cost, and the process can be reduced. The yield can be improved.
  • the force described in the case where the semiconductor resistance region 131 serving as a heater is embedded in the surface of the semiconductor layer 13 is not limited to this.
  • a resistive layer made of a thin film of polycrystalline silicon or refractory metal may be deposited on the surface of the semiconductor layer 13.
  • the force described for the diode as the temperature detection element D1 may use a bipolar transistor instead of the diode as the temperature detection element D1, and use the diode characteristics of the base and the emitter.
  • calibration data for the gas type and gas flow rate in chamber 2 is acquired in advance, it is possible to measure the gas type and gas flow rate in addition to the gas pressure in chamber 2. is there.
  • the chamber is not necessarily required.
  • it can be used to measure the flow rate of gas in piping, the flow rate of air in an air conditioning duct, and the like, and the atmospheric pressure of the earth that can be regarded as an infinite volume may be used as the measurement target.
  • the senor, the measuring apparatus, and the measuring method of the present invention measure the gas pressure in the chamber, the gas flow rate in the piping, the air flow rate in the air conditioning duct, and the like. It can also be used regularly, and the atmospheric pressure of the earth can also be used as a measurement target, so it can be used in various industries such as electronics-related industries and automobile-related industries.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measuring Volume Flow (AREA)

Abstract

Cette invention propose un capteur pour mesurer des espèces gazeuses, une pression ou un débit à partir d'une différence de température de la couche semi-conductrice (13) avant et après un chauffage. Le capteur comprend un semi-conducteur (13) ayant une surface, qui vient en contact thermique avec un gaz objet devant être mesuré, un dispositif de chauffage (131) pour chauffer la couche semi-conductrice (13) et un élément de détection de température (D1) incorporé dans la partie supérieure de la couche semi-conductrice (13), pour détecter la température de la couche semi-conductrice (13) avant et après le chauffage avec le dispositif de chauffage (131).
PCT/JP2007/070528 2006-11-02 2007-10-22 Capteur, dispositif de mesure et procédé de mesure WO2008053729A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006299453A JP2010008045A (ja) 2006-11-02 2006-11-02 センサ、測定装置及び測定方法
JP2006-299453 2006-11-02

Publications (1)

Publication Number Publication Date
WO2008053729A1 true WO2008053729A1 (fr) 2008-05-08

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010236890A (ja) * 2009-03-30 2010-10-21 Yamatake Corp 物性値測定システム及び物性値測定方法
EP2647985A1 (fr) * 2012-04-04 2013-10-09 Belenos Clean Power Holding AG Capteur de gaz et méthode de détermination d'une concentration de gaz dans un mélange binaire
JP2014159977A (ja) * 2013-02-19 2014-09-04 Renesas Electronics Corp 圧力センサ、及び半導体装置
US9140659B2 (en) 2011-09-29 2015-09-22 Belenos Clean Power Holding Ag Gas sensor and method for determining a concentration of gas in a two-component mixture
EP3457092A1 (fr) * 2017-09-13 2019-03-20 First Sensor AG Capteur de propriété de gaz thermique

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Publication number Priority date Publication date Assignee Title
JP5654242B2 (ja) 2010-01-18 2015-01-14 矢崎総業株式会社 電線の端末処理方法
EP3062097A1 (fr) * 2015-02-27 2016-08-31 EM Microelectronic-Marin SA Capteur d'humidité avec module thermique

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JP2004085490A (ja) * 2002-08-28 2004-03-18 Yamatake Corp 圧力計および熱式流量計
JP2004286492A (ja) * 2003-03-19 2004-10-14 Japan Science & Technology Agency 気体センシングシステムとこれに用いる温度センサ
JP2006153769A (ja) * 2004-11-30 2006-06-15 Mitsuteru Kimura 気体センサとこれを用いた気体センシング装置

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JP3501746B2 (ja) * 1992-10-27 2004-03-02 株式会社半導体エネルギー研究所 流体の計測方法
JP2001012988A (ja) * 1999-04-27 2001-01-19 Yazaki Corp 熱式流体センサ、流体判別装置及びその方法、フローセンサ、並びに、流量計測装置及びその方法
JP2003098012A (ja) * 2001-09-26 2003-04-03 Mitsuteru Kimura 温度測定装置およびこれ用いたガス濃度測定装置
JP2004085490A (ja) * 2002-08-28 2004-03-18 Yamatake Corp 圧力計および熱式流量計
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JP2006153769A (ja) * 2004-11-30 2006-06-15 Mitsuteru Kimura 気体センサとこれを用いた気体センシング装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010236890A (ja) * 2009-03-30 2010-10-21 Yamatake Corp 物性値測定システム及び物性値測定方法
US9140659B2 (en) 2011-09-29 2015-09-22 Belenos Clean Power Holding Ag Gas sensor and method for determining a concentration of gas in a two-component mixture
US9739739B2 (en) 2011-09-29 2017-08-22 Belenos Clean Power Holding Ag Gas sensor and method for determining a concentration of gas in a two-component mixture
EP2647985A1 (fr) * 2012-04-04 2013-10-09 Belenos Clean Power Holding AG Capteur de gaz et méthode de détermination d'une concentration de gaz dans un mélange binaire
JP2014159977A (ja) * 2013-02-19 2014-09-04 Renesas Electronics Corp 圧力センサ、及び半導体装置
CN110383015A (zh) * 2017-03-03 2019-10-25 第一传感器股份有限公司 热气性质传感器
US11112288B2 (en) 2017-03-03 2021-09-07 First Sensor AG Thermal gas property sensor
EP3457092A1 (fr) * 2017-09-13 2019-03-20 First Sensor AG Capteur de propriété de gaz thermique

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