WO2008040169A1 - Électrode souple de cellule photovoltaïque et son procédé de fabrication - Google Patents

Électrode souple de cellule photovoltaïque et son procédé de fabrication Download PDF

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Publication number
WO2008040169A1
WO2008040169A1 PCT/CN2007/002750 CN2007002750W WO2008040169A1 WO 2008040169 A1 WO2008040169 A1 WO 2008040169A1 CN 2007002750 W CN2007002750 W CN 2007002750W WO 2008040169 A1 WO2008040169 A1 WO 2008040169A1
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WO
WIPO (PCT)
Prior art keywords
conductive
wire
conductive fabric
layer
flexible electrode
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Application number
PCT/CN2007/002750
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English (en)
Chinese (zh)
Inventor
Xiansheng Xing
Original Assignee
Xiansheng Xing
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Application filed by Xiansheng Xing filed Critical Xiansheng Xing
Publication of WO2008040169A1 publication Critical patent/WO2008040169A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to an electrode for a photovoltaic cell, and more particularly to a flexible electrode for a photovoltaic cell and a method of fabricating the same. It belongs to the field of solar cell technology. Background technique
  • Photovoltaic cells directly convert sunlight into electrical energy.
  • photovoltaic cells based on oxide semiconductor electrodes have made breakthroughs in photoelectric conversion rate in the past 15 years and are being pushed to practical use.
  • a photovoltaic cell based on an oxide semiconductor electrode has a structure and principle in which: in a closed space, an oxide semiconductor electrode and a counter electrode are disposed opposite to each other, and an electrolytic shield for transmitting electrons is filled between the two electrodes.
  • an oxide semiconductor material as a photoelectric conversion material When the oxide semiconductor electrode is irradiated by sunlight, an oxide semiconductor material as a photoelectric conversion material generates separation of electrons and holes, wherein electrons are transported to the counter electrode by a load, and the electrolyte transports electrons to the hole and at the counter electrode The electrons are obtained, and the cycle is repeated, and the photocurrent is continuously generated. Since the applicable oxide semiconductor material has a wide band gap and requires high-energy ultraviolet rays in the sunlight to generate the above photoelectric conversion process, the sunlight utilization efficiency is low.
  • Gratzell of Switzerland proposed a technical solution using nanocrystalline microcrystalline mesoporous titanium oxide as the photoelectric conversion material of the electrode and surface treatment.
  • the surface of the titanium oxide particles was covered with an organic dye monolayer, which greatly improved the photoelectricity.
  • the active surface area and the sunlight utilization rate of the conversion material enable the photoelectric conversion rate of the photovoltaic cell to reach 10% or more.
  • This type of photovoltaic cell is called a Gratzell battery or a dye-sensitized solar cell (DSSC).
  • a typical dye-sensitized solar cell uses a glass or organic polymer sheet as a light-transmissive sealing material, and is coated with a transparent conductive material film on the inner surface of the sheet, such as commonly used indium tin oxide (ITO) or a tin oxyfluoride oxide or the like, a layer of a photoelectric conversion material is formed on the surface of the conductive material film, and surface dye sensitization is performed to form a light-transmitting conductive electrode; parallel to the electrode, a plated light-transmitting or opaque seal is provided.
  • ITO indium tin oxide
  • a tin oxyfluoride oxide or the like a layer of a photoelectric conversion material is formed on the surface of the conductive material film, and surface dye sensitization is performed to form a light-transmitting conductive electrode; parallel to the electrode, a plated light-transmitting or opaque seal is provided.
  • the dye-sensitized solar cell (DSSC) of this structure has the disadvantages of both improving the photoelectric conversion rate and reducing the production cost, and is manifested in: 1.
  • the fabrication of the light-transmitting conductive electrode relates to the surface of the light-transmitting sealing material.
  • a step of plating a film of a light-transmitting conductive material which is often subjected to sputtering or plasma forming, is difficult to be continuously manufactured, and has high cost;
  • the production of a light-transmitting conductive electrode is also related to the surface of the conductive material film.
  • the process of forming a thin layer of photoelectric conversion material which is difficult to be continuously manufactured due to the limitation of the previous process, is difficult to stabilize in quality, and high in cost; 3.
  • a first object of the present invention is to provide a flexible electrode for a photovoltaic cell in order to overcome the disadvantages of the above-described dye-sensitized solar cell (DSSC) conductive electrode processing process being complicated, difficult to continuously manufacture, and high in cost.
  • DSSC dye-sensitized solar cell
  • a second object of the present invention is to provide a method of manufacturing a flexible electrode for a photovoltaic cell.
  • the first object of the invention is achieved by the following measures:
  • a flexible electrode for a photovoltaic cell comprising: comprising a flexible conductive fabric layer, wherein the conductive fabric layer is provided with a plurality of conductive lead-out points or lead wires, and the surface of the conductive fabric layer is covered with a layer of photoelectric conversion material
  • the conductive fabric layer is electrically connected to form a conductive integrated structure; the photoelectric conversion material layer covers the entire outer surface of the conductive fabric layer and the connecting end of the lead wire, and forms a complete thin layer.
  • the first object of the invention can also be achieved by taking the following measures:
  • the conductive fabric layer is composed of a filament of a good conductor material, or a filament of a semiconductor material that is well-conducted from the surface, a non-metallic conductive material filament, and an insulation.
  • the material filament is woven, or is composed of one or more kinds of filaments of a good conductor material and a filament of a semiconductor material, a wire of a non-metallic conductive material, and a wire of an insulating material;
  • the wire of the good conductor material comprises a wire, a gold wire, a copper wire
  • the good conductor wire, the semiconductor wire, the non-metallic conductive wire and the insulating material wire are monofilament or multifilament spun yarn.
  • the conductive fabric layer has a thickness of 5 ⁇ m to 5000 ⁇ m; preferably 10 ⁇ m to 2000 ⁇ m; more preferably 15 ⁇ m to 1000 ⁇ m; and most preferably 20 ⁇ m to 300 ⁇ m.
  • the width is from 1 cm to 500 cm; preferably from 10 cm to 200 cm; more preferably from 20 cm to 150 cm; most preferably from 50 cm to 100 cm.
  • the length of the conductive fabric layer is not limited.
  • the photoelectric conversion material layer is composed of an oxide semiconductor material, such as titanium oxide, one or a mixture of two or more kinds of oxidized words.
  • the oxide semiconductor material forms a complete thin layer on the surface of the conductive fabric layer, the thin layer having a thickness of 0.01 ⁇ m to 50 ⁇ m, preferably 0.1 ⁇ m to 10 ⁇ m. .
  • the oxide semiconductor thin layer can be formed in various suitable manners, and has various microstructures required for high photoelectric conversion.
  • An embodiment of the present invention is: the conductive fabric layer is woven from a good conductor wire, and the conductive wires are electrically connected to form a continuous conductive connecting wire, and all the wires are connected to form a conductive integrated structure;
  • the conductive connecting lines may have a diagonal " ⁇ ", " / ", a diagonal line shape "" ", or "" ⁇ ", or may be diagonally curved.
  • the flexible electrode can be further subjected to various surface treatments such as dye sensitization treatment or passivation treatment.
  • the second object of the present invention can be achieved by taking the following measures:
  • the above manufacturing method can be adjusted as needed, and each step can be carried out separately to carry out a batch production method; it is preferable to carry out continuous production in a rolling manner on a production line.
  • the second object of the invention can also be achieved by taking the following measures:
  • the conductive fabric layer is divided into conductive integrated regions according to customer needs or product specifications, and one or more cells are formed, and the wire interlacing points of each cell are electrically connected to form a continuous conductive.
  • the connecting wires form a conductive integrated structure for each cell, and the conductive fabric layer as a whole also forms a conductive integrated structure.
  • the flexible electrode obtained above may be further cut in units of a conductive integrated cell to form a plurality of flexible electrodes having a small area, and then the slit is closed. Check the warehouse.
  • the flexible electrode according to the present invention is easy to be continuously manufactured in a large area, and has a large free space to select a conductive fabric layer, it is easy to control the material, structure, performance, molding process and quality in the industrial production of the photoelectric conversion material layer. Stability, therefore, helps to improve product quality and reduce production costs.
  • the conductive fabric for conducting photo-generated electrons of the photoelectric conversion material of the present invention is a good conductor, it is advantageous to increase the photoelectric conversion rate of the photovoltaic cell.
  • the lead wires of the electrodes can be derived at an appropriate position, and the connection points of the lead wires can be easily electrically insulated, thereby facilitating the photoelectric conversion rate of the photovoltaic cells. It is also conducive to the continuous manufacturing of the subsequent photovoltaic cells.
  • the flexible electrode of the present invention can be cut, cut, bendable, and surface-treatable, as a component for constructing a photovoltaic cell, the use is flexible and effective, and the design creative space is large.
  • the flexible electrode of the present invention is an industrial product that can be used as an important component of a photovoltaic cell for the manufacture of photovoltaic cells.
  • it has other outstanding advantages.
  • the beneficial effects of the present invention are further shown below by way of specific examples.
  • Figure la is a schematic view of the structure of the flexible electrode.
  • Figure lb is a cross-sectional view of the A-A structure in Figure 1.
  • FIG. 2a and 2b are cross-sectional views of the structure taken along line B-B of Fig. 1.
  • FIG. 3 is a schematic diagram showing the division of a conductive integrated region according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing the division of a conductive integrated region according to an embodiment of the present invention. detailed description
  • the flexible electrode 100 of the present embodiment is composed of a flexible conductive fabric layer 101, a plurality of lead wires 102 of the flexible conductive fabric layer 101, and a photoelectric conversion material layer 103.
  • 101 is electrically integrated, for example, if a continuous conductive connecting line 104 is formed between two diagonal points on a certain plane thereof, it is electrically connected in the plane, and can be in the plane
  • the lead wire 102 is led at any point to conduct the entire current flowing through the plane, and the photoelectric conversion material layer 103 completely covers the entire surface of the conductive fabric layer 101 and the lead wire connection point 1020 and the lead wire connection end portion 1021.
  • the conductive fabric layer 101 is composed of a filament of a good conductor material, or a filament of a semiconductor material having a good surface conductor, a filament of a non-metallic conductive material, or a filament of an insulating material, or a filament of a good conductor material and a filament of a semiconductor material, a non-metallic conductive material.
  • One or more of the filaments of the filament or the insulating material; the filament of the good conductor material comprises one or two of a wire, a gold wire, a copper wire, an aluminum wire, a platinum wire, a titanium wire and a stainless steel wire.
  • the good conductor wire, the semiconductor wire, the non-metallic conductive wire and the insulating material wire are monofilament or multifilament spun.
  • the conductive fabric layer 101 may have a thickness of 20 microns, 50 microns, 80 microns, 100 Micron, 150 micron, 200 micron, 250 micron or 300 micron, conductive fabric layer 101 having a width of 50 cm, 60 cm, 65 cm, 70 cm, 80 cm, 90 cm or
  • the photoelectric conversion material layer 103 of the conductive fabric layer 101 is a thin layer composed of an oxide semiconductor material, such as one or a mixture of two or more of titanium oxide and zinc oxide.
  • the thickness of the photoelectric conversion material layer 103 is 0.1 ⁇ m to
  • the thin layer of oxide semiconductor can be formed in a variety of suitable manners, with various microstructures required for high photoelectric conversion.
  • the conductive fabric layer 101 is woven from a good conductor wire, and a continuous conductive connecting line is formed by electrically connecting the wire interlacing points, and all the wires are connected to form a conductive integrated structure.
  • the conductive connecting lines 104 may have a diagonal shape of " ⁇ ", "/”, a diagonal line shape """, or ' iL- ", or may be diagonally curved.
  • the flexible electrode of this embodiment can be further subjected to various surface treatments such as dye sensitization treatment or passivation treatment.
  • the present invention does not limit the density of the conductive fabric layer, so that the flexible electrode can be dense.
  • the photoelectric conversion material layer 103 is covered with a mesh after covering the surface of the conductive fabric layer 101; and in the case where a densely-woven conductive fabric is selected, the photoelectric conversion material layer 103 is used.
  • the mesh is completely or partially filled when covering the surface of the conductive fabric layer 101.
  • the present invention does not limit the light transmittance of the conductive fabric itself.
  • the flexible electrode may be light transmissive, semi-transparent, or opaque.
  • the effective light-receiving area of the photoelectric conversion material layer 103 is an important factor. Since the surface of the conductive fabric is undulating, in the range of the thickness of the photoelectric conversion material layer 103 prescribed by the present invention, even in the case where a densely woven conductive fabric is selected, the photoelectric conversion material layer 103 substantially follows the conductive fabric. The surface state of the layer 101 is undulating, so the light-receiving area is larger than the apparent area (ie, the area under the flat state); and in the case of the woven fabric, the light can be irradiated through the mesh to the side of the hole or even the hole.
  • the latter photoelectric conversion material layer 103 is thus advantageous for increasing the light receiving area of the photoelectric conversion material layer 103. Unless the conductive fabric is too loose to adhere a small proportion of the photoelectric conversion material, the light-receiving area of the photoelectric conversion material layer 103 is instead smaller than the apparent area. Therefore, by selecting a suitably dense conductive fabric layer 101, a suitable thickness is used.
  • the photoelectric conversion material layer 103 is formed into a flexible electrode having a suitable density, and the maximum light-receiving area can be preferably obtained. This is a prominent substantive feature and significant technological advancement of the present invention.
  • the flexible conductive fabric layer 101 has a plurality of lead wire connection points 1020 for connecting and guiding the lead wires.
  • the conductive fabric layer 101 has a thickness of 5 ⁇ m, 10 ⁇ m, 15 ⁇ m or 20 ⁇ m and a width of 1 cm, 5 cm, 10 cm or 20 cm, and the length of the conductive fabric layer is not limited.
  • the oxide semiconductor material forms a complete thin layer on the surface of the conductive fabric layer, the thin layer having a thickness of 0.01 ⁇ m, 0.05 ⁇ m, 0.1 ⁇ m, 0.5 ⁇ m or 1 ⁇ m. The rest is the same as the specific embodiment 1.
  • the embodiment is characterized in that the conductive fabric layer 101 has a thickness of 25 micrometers, 30 micrometers, 50 micrometers, 100 micrometers, 200 micrometers or 300 micrometers, and has a width of 25 centimeters, 50 centimeters, 100 centimeters or 150 centimeters, and is electrically conductive.
  • the length of the fabric layer is not limited.
  • the oxide semiconductor material forms a complete thin layer on the surface of the conductive fabric layer, the thin layer having a thickness of 1.5 ⁇ m, 2.5 ⁇ m, 5 ⁇ m, 10 ⁇ m, 15 ⁇ m or 20 ⁇ m. The remainder is the same as the specific embodiment 1 or the specific embodiment 2.
  • the specific embodiment is characterized in that the thickness of the conductive fabric layer 101 is 350 micrometers, 400 micrometers, 500 micrometers, 600 micrometers, 80 cm nanometers or 1000 ⁇ 1 meters, and the width is 200 centimeters, 250 centimeters, 300 centimeters, 400. Centimeter or 500 cm, the length of the conductive fabric layer is not limited.
  • the oxide semiconductor material forms a complete thin layer on the surface of the conductive fabric layer, the thin layer having a thickness of 25 ⁇ m, 30 ⁇ m, 35 ⁇ m, 40 ⁇ m, 45 ⁇ m or 50 ⁇ m. The rest is the same as the specific embodiment 1 or the specific embodiment 2.
  • the prior art clarifies that a thin layer of a photoelectric conversion material having a fine-grained mesoporous structure has a larger surface area, and if the incident light enters the thin layer through transmission, reflection, refraction, scattering, or the like, the photoelectric conversion material can be greatly increased.
  • the light receiving area of the layer can incorporate various beneficial technologies into the design and manufacture of the flexible electrode, taking into account the characteristics of the raw material, formability, manufacturing process, process, resulting structure and performance, production controllability, product quality. Factors such as quantity and stability, safety, environmental protection, and production costs. Since the electroconductive material layer is formed by using a physicochemically stable conductive fabric as a substrate, the above comprehensive factors can be optimally considered and implemented. It is difficult to do this by the prior art to manufacture oxidized semiconductor electrodes in photovoltaic cells. This again shows another beneficial effect of the present invention.
  • Forming a photoelectric conversion material layer The conductive fabric subjected to the step 3) is coated with a titanium oxide sol having a particle size of 20 nm by a leaching method, naturally dried, heat-treated at 450 ° C for 30 minutes, and naturally cooled to form a thickness of about a 300 nm photoelectric conversion material layer; thus a flexible electrode of 2 m * 500 mm;
  • the prepared flexible electrode can be further cut in units of 0.5 m * 500 mm to form a plurality of flexible electrodes having a small area; the slit must be closed, such as by a titanium oxide sol.
  • Conductive integration treatment As shown in Fig. 4, the conductive fabric is divided into 50 cells with a cell of 0.2 m * 500 mm, and between the two diagonal points of each cell plane, through the wire mesh Printing nano silver inorganic conductive adhesive for bonding to form a diagonal continuous Conductive connection line;
  • Forming a photoelectric conversion material layer The conductive fabric subjected to the step 3) is first coated with a titanium oxide sol having a particle size of 5 nm by a leaching method, and after being naturally dried, coated with a titanium oxide sol having a particle size of 20 nm. After being naturally dried, it is heat-treated at 450 ° C for 30 minutes, and naturally cooled to form a layer of photoelectric conversion material having a thickness of about 400 nm; thus, a flexible electrode of 5 m * 1000 mm is obtained;
  • the prepared flexible electrode can be further cut in units of 0.2 m * 500 mm to form a plurality of flexible electrodes having a small area; the slit must be closed, for example, closed with a titanium oxide sol.
  • Flexible conductive fabric densely woven silver-coated polyester fabric, multi-strand twill, thickness 30 microns, width 200 mm, length 20 m; pickling and air drying;
  • the conductive fabric is divided into 100 cells with 0.2 m * 200 mm as a cell, and between the two diagonal points of each cell plane, screen printing nano silver conductive adhesive Bonding to form a continuous conductive connection line;
  • Forming a photoelectric conversion material layer The conductive fabric subjected to the step 3) is first coated with an anatase titanium oxide sol having a particle size of 10 nm by a printing method, and dried by hot air, and then an anatase type having a particle size of 25 nm is used.
  • the titanium oxide sol was coated, hot air dried, heat treated at 120 ° C for 10 minutes, and naturally cooled to form a photoelectric conversion material layer having a thickness of about 600 nm. This produces a 20 m X 200 mm package flexible electrode;
  • the above steps 2 - 4 can be continuously manufactured by a rolling method.
  • the prepared package flexible electrode can be further cut in units of 0.2 m * 200 mm to form a plurality of flexible electrodes having a small area; the slit must be closed, for example, sealed with a titanium oxide sol.
  • the above steps 2 - 5 can be continuously manufactured by scrolling.
  • one piece of the flexible electrode (as shown in the specific embodiment 2) and a piece of the surface as a counter electrode each having a facing area of 200 mm * 500 mm are plated.
  • Platinum aluminum foil the two electrodes are respectively led out to the outer edge of the glass sheet, and the outer edge of the glass sheet is sealed with an epoxy resin sealing glue, and only a small mouth is injected into the electrolyte with a syringe ( ⁇ 2 / ⁇ redox system). Fill it between the two electrodes and seal the small opening with epoxy resin sealant. This produces a photovoltaic cell.
  • a piece of the flexible electrode of 200 mm * 500 mm (as shown in Example 2) was taken, first dye-sensitized with ⁇ 3 dye, and then between two pieces of glass having an area of 210 mm * 510 mm. , placing the dye-sensitized flexible electrode and a matching counter electrode, ie, the surface of the platinum-plated aluminum foil, the two electrodes respectively lead the lead wire beyond the outer edge of the glass sheet, and seal the outer edge of the glass sheet with an epoxy resin sealing glue Only use a small syringe to inject the electrolyte into the electrolyte (1 2 /1-redox system), fill it between the two electrodes, and seal the small mouth with epoxy resin sealant. This produces a dye-sensitized solar cell (DSSC).
  • DSSC dye-sensitized solar cell
  • Taking the flexible electrode of the package (as shown in the specific embodiment 3), first dye-sensitizing with a dye, and then laminating the package with the light-transparent sealed polyester sheet in a rolling manner, and then using a glue
  • the electrolyte is sized, laminated with the packaged sheet-shaped counter electrode, and the two electrodes are respectively led out of the lead line, and the edges of the laminated sheet and the back of the counter electrode are sealed.
  • a packaged dye-sensitized solar cell (DSSC) can be further cut and edged to produce a smaller dye-sensitized solar cell (DSSC).
  • the process is changed to laminate, and the photovoltaic cell can also be continuously fabricated by scrolling. This further shows the beneficial effects of the present invention.

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  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

L'invention porte sur une électrode souple de cellule photovoltaïque et sur son procédé de fabrication. Ladite électrode comprend: une couche souple de tissu conducteur (101), des points de connexion conducteurs (1020) ou des extrémités de conduction (1021) d'une ligne d'évacuation placés dans le tissu conducteur (101), et une couche de matériau (103) de conversion photoélectrique recouvrant la couche de tissu conducteur (101). La couche de tissu conducteur (101) est formée sur une structure conductrice intégrée par une connexion électrique. La couche de matériau (103) de conversion photoélectrique recouvre toute la surface de la couche de tissu conducteur (101) ainsi que l'extrémité de connexion de la ligne d'évacuation, de manière à former une couche de film mince intégré. Ladite électrode souple permet de réduire les coûts de production et est adaptée à la production en continu subséquente de cellules photovoltaïques.
PCT/CN2007/002750 2006-09-18 2007-09-18 Électrode souple de cellule photovoltaïque et son procédé de fabrication WO2008040169A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610122198.6 2006-09-18
CNA2006101221986A CN1925172A (zh) 2006-09-18 2006-09-18 用于光伏电池的柔性电极及其制造方法

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WO2008040169A1 true WO2008040169A1 (fr) 2008-04-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113192758A (zh) * 2021-04-21 2021-07-30 上海工程技术大学 光电转换织物及其制备方法和应用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1925172A (zh) * 2006-09-18 2007-03-07 邢宪生 用于光伏电池的柔性电极及其制造方法
CN102465393A (zh) * 2010-11-08 2012-05-23 慧濠光电科技股份有限公司 一种软性基板的制作方法以及太阳能电池及其制作方法
CN111308204A (zh) * 2019-12-24 2020-06-19 东华大学 一种织物面电阻测试方法及测试夹具

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Publication number Priority date Publication date Assignee Title
JPS59208793A (ja) * 1983-05-12 1984-11-27 Sanyo Electric Co Ltd アモルフアス半導体装置
JPH0677511A (ja) * 1992-08-27 1994-03-18 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
DE10032286A1 (de) * 2000-07-03 2002-01-17 Titv Greiz Fotovoltaikanordnungen
WO2006030372A1 (fr) * 2004-09-14 2006-03-23 Koninklijke Philips Electronics N.V. Fibre ou filament electro-optique
CN1925172A (zh) * 2006-09-18 2007-03-07 邢宪生 用于光伏电池的柔性电极及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208793A (ja) * 1983-05-12 1984-11-27 Sanyo Electric Co Ltd アモルフアス半導体装置
JPH0677511A (ja) * 1992-08-27 1994-03-18 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
DE10032286A1 (de) * 2000-07-03 2002-01-17 Titv Greiz Fotovoltaikanordnungen
WO2006030372A1 (fr) * 2004-09-14 2006-03-23 Koninklijke Philips Electronics N.V. Fibre ou filament electro-optique
CN1925172A (zh) * 2006-09-18 2007-03-07 邢宪生 用于光伏电池的柔性电极及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113192758A (zh) * 2021-04-21 2021-07-30 上海工程技术大学 光电转换织物及其制备方法和应用

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