WO2008038708A1 - Dispositif d'émission de lumière à semiconducteur - Google Patents
Dispositif d'émission de lumière à semiconducteur Download PDFInfo
- Publication number
- WO2008038708A1 WO2008038708A1 PCT/JP2007/068798 JP2007068798W WO2008038708A1 WO 2008038708 A1 WO2008038708 A1 WO 2008038708A1 JP 2007068798 W JP2007068798 W JP 2007068798W WO 2008038708 A1 WO2008038708 A1 WO 2008038708A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- semiconductor light
- emitting device
- reflector
- edge portion
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a semiconductor light emitting device including a plurality of semiconductor light emitting elements.
- FIG. 15 shows an example of a conventional semiconductor light emitting device (see, for example, Patent Document 1 below).
- the semiconductor light emitting device X shown in the figure includes a printed wiring board 91, a plurality of LED chips 92, a plurality of wires 93, a plurality of fluorescent resin members 94, and a transparent resin member 95.
- the plurality of LED chips 92 are mounted on the printed wiring board 91 in a matrix.
- Each LED chip 92 is electrically connected to a wiring pattern (not shown) of the printed wiring board 91 via two wires 93.
- the printed wiring board 91 is formed with a plurality of reflectors 91a.
- Each reflector 91a surrounds the LED chip 92 and the two wires 93, and its surface has a high reflectivity.
- a space surrounded by the reflector 91a is filled with a fluorescent resin member 94.
- the transparent resin member 95 covers the printed wiring board 91 and the fluorescent resin member 94.
- the transparent resin member 95 is formed with a plurality of lenses 95a. Each lens 95a is positioned in front of the corresponding one LED chip 92.
- power is supplied to the plurality of LED chips 92 via terminals (not shown) provided on the printed wiring board 91. Thereby, light is emitted from each LED chip 92, and this light is transmitted through the lens 95a and emitted to the outside.
- Patent Document 1 Japanese Patent Laid-Open No. 11 237850
- each wire 93 is surrounded by the overall force reflector 91a. Therefore, a part of the light emitted from the LED chip 92 is blocked by the wire 93, and the increase in the brightness of the semiconductor light emitting element X is hindered. Further, the wire 93 is bonded to the wiring pattern of the printed wiring board 91 in the region surrounded by the reflector 91a. Therefore, it is necessary to determine the shape and size of the reflector 91a in consideration of the space for bonding the wire 93. However, the shape and size set in this way This may lead to a decrease in light reflection efficiency by the reflector 91a. Disclosure of the invention
- the present invention has been conceived under the circumstances described above, and an object thereof is to provide a semiconductor light emitting device capable of achieving high luminance.
- a semiconductor light emitting device includes a plurality of semiconductor light emitting elements arranged along a plane, a plurality of cone-shaped reflectors individually surrounding the plurality of semiconductor light emitting elements, and the plurality of the plurality of semiconductor light emitting elements.
- the number of wires connected to each semiconductor light-emitting element can be one! / Or multiple wires.
- each wire and a portion continuous with the wire are located outside the space surrounded by the reflector. For this reason, it is not necessary to provide a place for bonding the wire in the space surrounded by the reflector, and light emitted from the semiconductor light emitting element is suppressed from being blocked by the wire. Furthermore, it is possible to make the reflector have a size and shape suitable for reflecting light from the semiconductor light emitting element and emitting it appropriately.
- the semiconductor light emitting device of the present invention further includes at least one heat dissipation member having a first surface on which the plurality of semiconductor light emitting elements are mounted and a second surface opposite to the first surface.
- the second surface of the heat dissipation member is exposed to the outside of the semiconductor light emitting device. According to such a configuration, it is possible to dissipate heat generated from the semiconductor light emitting element to the outside of the semiconductor light emitting device through the heat radiating member. This is advantageous for increasing the output of the semiconductor light emitting device.
- the semiconductor light emitting device of the present invention further includes two heat dissipating members spaced apart from each other across the center of the semiconductor light emitting device.
- Each heat dissipating member has a first surface on which the plurality of semiconductor light emitting elements are mounted and a second surface opposite to the first surface, and the second surface is exposed to the outside of the semiconductor light emitting device. Yes.
- each of the plurality of reflectors has a shared edge portion and a non-shared edge portion.
- Each reflector is partially in contact with an adjacent reflector through the shared edge portion.
- the shared edge portion is configured to be lower in height than the non-shared edge portion with respect to the plane.
- the semiconductor light emitting device of the present invention further includes a wavelength conversion resin filled in a space surrounded by the plurality of reflectors, and the wavelength conversion resin includes the shared edge of each reflector. It is provided so as to straddle the part.
- FIG. 1 is a perspective view showing a semiconductor light emitting device according to a first embodiment of the present invention.
- FIG. 2 is a plan view showing the semiconductor light emitting device of FIG.
- FIG. 3 is a bottom view showing the semiconductor light emitting device of FIG. 1.
- FIG. 4 is a cross-sectional view taken along line IV—IV in FIG.
- FIG. 5 is a sectional view taken along line V—V in FIG.
- FIG. 6 is a cross-sectional view showing a main part of the semiconductor light emitting device of FIG. 1.
- FIG. 7 is a plan view showing a modification of the semiconductor light emitting device of FIG. 1.
- FIG. 8 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention.
- FIG. 9 is a perspective view showing a semiconductor light emitting device according to a third embodiment of the present invention.
- FIG. 10 is a plan view showing the semiconductor light emitting device of FIG.
- FIG. 11 is a bottom view showing the semiconductor light emitting device of FIG. 9.
- FIG. 12 is a cross-sectional view taken along the line XII-XII in FIG.
- FIG. 13 is a plan view showing a modification of the semiconductor light emitting device of FIG.
- FIG. 14 is a cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.
- FIG. 15 is a cross-sectional view showing an example of a conventional semiconductor light emitting device.
- the semiconductor light emitting device A1 shown in the figure has a case 1, two heat dissipating members 2, a plurality of LED chips 3, and a fluorescent light.
- a resin 4, a transparent resin 5, a plurality of wires 6, and a plurality of leads 7 are provided.
- the semiconductor light emitting device A1 is configured as a light source device capable of surface emission by causing a plurality of LED chips 3 to emit light simultaneously. 4 to 6, the wire 6 is omitted. Further, in FIG. 6, the fluorescent resin 4 and the transparent resin 5 are further omitted.
- Case 1 has a flat, substantially rectangular parallelepiped shape, and is made of, for example, a white resin. Case 1 is used as the base of the semiconductor light emitting device A1. Case 1 has a plurality of reflectors 11 formed therein. Each reflector 11 is a cone-shaped taper surface and surrounds one LED chip 3. The reflector 11 has a relatively high reflectivity, and directs light emitted from the LED chip 3 upward (upward in FIGS. 4 and 5). Adjacent reflectors 11 are in partial contact (see Figure 2). Specifically, each reflector 11 has two types of edge portions, that is, a non-shared edge portion 11a and a shared edge portion l ib.
- each reflector 11 and the reflector 11 adjacent thereto are in contact with each other via the shared edge portion l ib.
- the non-shared edge portion 11 a of each reflector 11 is not in contact with the other reflectors 11.
- the shared edge portion l ib has a lower height than the non-shared edge portion 11a.
- the heights of these edge portions l la and l ib may be measured with reference to the upper surface of the heat radiating member 2, for example, or may be measured with reference to a virtual plane parallel to the upper surface of the heat radiating member 2. Les.
- the two heat dissipating members 2 are, for example, Cu-shaped rod-like members for mounting a plurality of LED chips 3.
- the two heat dissipating members are both embedded in the case 1, and are spaced apart in the width direction of the case 1 with the center of the semiconductor light emitting device A1 interposed therebetween as shown in FIG.
- Each heat dissipating member 2 has an upper surface on which the LED chip 3 is mounted and a lower surface on the opposite side exposed from the case 1! /, (See Fig. 4).
- the plurality of LED chips 3 function as a light source of the semiconductor light emitting device A1.
- a semiconductor light emitting element other than the LED chip may be used as the light source.
- Each LED chip 3 has a size of, for example, about 0.3 mm square.
- the plurality of LED chips 3 are arranged in two rows of matrixes along one virtual plane by being mounted on the two heat dissipating members 2. Note that this virtual plane may be used as a reference plane for measuring the height of the edge portion of the reflector 11.
- the fluorescent resin 4 is made of a resin mixed with a fluorescent substance, and fills the space surrounded by the reflector 11 as shown in FIG. 4 and FIG.
- the fluorescent resin 4 is for appropriately wavelength-converting light from the LED chip 3 according to the type of the fluorescent substance. As shown in FIG. 5, the fluorescent resin 4 straddles the shared edge portion l ib of the reflector 11. That is, the fluorescent resin 4 is formed as a single unit over all the spaces surrounded by the plurality of reflectors 11 rather than being divided for each space surrounded by the reflectors 11! /.
- the transparent resin 5 is molded by using, for example, a transparent epoxy resin, and covers the case 1 and the fluorescent resin 4.
- the transparent resin 5 is formed with a plurality of lenses 5a.
- Each lens 5a is disposed in front of the corresponding one LED chip 3, and has a function of enhancing directivity by refracting light from the LED chip 3.
- the plurality of leads 7 are made of, for example, Cu, and a part of each is embedded in the case 1.
- a portion of each lead 7 exposed at a position adjacent to the reflector 11 is a node 7a.
- the pad 7a is a part for bonding the wire 6.
- the pad 7a arranged between the plurality of LED chips 3 arranged in two rows is a force sword as a common electrode, and is arranged outside the plurality of LED chips 3.
- the formed pad 7a serves as an anode as an individual electrode.
- the portion of each lead 7 that extends from case 1 is a terminal 7b.
- the terminal 7b is used for mounting the semiconductor light emitting device A1 on a circuit board, for example. As clearly shown in FIG.
- the pad 7a is surrounded by the back side portion of the reflector 11. Since the reflector 11 has a cone shape, the back side portion of the reflector 11 has a curved shape. As a result, the pad 7a is provided at the bottom of the space having a relatively large size and a substantially diamond-shaped cross section or a substantially pentagonal cross section.
- the plurality of wires 6 are made of, for example, Au, and are used to energize the plurality of LED chips 3. As shown in FIGS. 1 and 2, two wires 6 are connected to each LED chip 3. As shown in FIG. 2, one of these two wires 6 is connected to a pad 7a arranged between a plurality of LED chips 3 arranged in two rows. The other of the two wires 6 is connected to a pad 7a arranged outside the plurality of LED chips 3.
- the operation of the semiconductor light emitting device A1 will be described.
- all the pads 7 a for bonding the wires 6 are arranged outside the reflector 11. Therefore, there is no place for bonding the wire 6 extending from the LED chip 3 in the area surrounded by the reflector 11! /.
- the portion of the reflector 11 that is in contact with the heat radiating member 2 is made into a perfect circle shape close to the LED chip 3, and the shape and size of the reflector 11 reflects the light from the LED chip 3 toward the lens 5a. It is possible to make it suitable. Therefore, the brightness of the semiconductor light emitting device A1 can be increased.
- the two heat dissipating members 2 are V, and a part of each deviation is exposed from the case 2! /. For this reason, it is possible to appropriately dissipate the heat generated by the light emission of the LED chip 3 to the outside of the semiconductor light emitting device A1. Therefore, it is possible to increase the output of the LED chip 3, which is advantageous for increasing the brightness of the semiconductor light emitting device A1.
- the semiconductor light emitting device A1 In forming the semiconductor light emitting device A1, when forming the case 1, for example, a white resin material is injected into the mold with the two heat dissipating members 2 inserted into the mold. When the resin material is cured, force is applied to the two heat radiating members 2. However, since the two heat radiating members 2 are spaced apart from each other with the center of the semiconductor light emitting device A1, this force can be distributed. Therefore, it is possible to prevent the heat radiating member 2 from being cracked in the manufacturing process of the semiconductor light emitting device A1.
- a liquid resin material mixed with a fluorescent substance is poured into the space surrounded by the reflector 11.
- the resin material poured to fill the entire space surrounded by the reflector 11 has a relatively low height! /, And the adjacent reflector 11 exceeds the common edge 1 lb. It flows into the space surrounded by.
- the resin material uniformly in all the spaces surrounded by the plurality of reflectors 11 to such an extent that the liquid surface reaches the non-shared edge portion 11a. Therefore, the light from all the LED chips 3 can be wavelength-converted into light having a desired wavelength without variation.
- the wire 6 In order to bond the wire 6 to the pad 7a, for example, a cable is used.
- the pad 7a is located at the bottom of a space having a relatively large size and having a substantially rhombus shape or a pentagonal shape. Therefore, the above-mentioned part of the case 1 surrounding the pad 7a in the case 1 Therefore, the wire 6 can be easily bonded.
- FIG. 7 is a plan view showing a modification of the semiconductor light emitting device A1.
- the configuration of the semiconductor light emitting device shown in the figure is substantially the same as that described above except that there is one wire bonded to each LED chip 3 (and the necessary change accompanying this).
- the configuration is the same as that of the conductor light emitting device A1.
- each LED chip 3 is connected to the power supply wiring on the bottom surface, for example. According to such a configuration, it is possible to further reduce the rate at which the light emitted from the LED chip 3 is blocked by the wire.
- FIGS. 8 to 14 show other embodiments of the present invention.
- the same or similar elements as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment.
- the wire 6 is omitted.
- FIG. 8 shows a semiconductor light emitting device according to the second embodiment of the present invention.
- the semiconductor light emitting device A2 shown in the drawing is different from the first embodiment in that the lens 5a described above is not formed on the transparent resin 5. Even with such a configuration, the brightness of the semiconductor light emitting device A2 can be increased as in the first embodiment described above. Further, the semiconductor light emitting device A2 can be made thinner than the semiconductor light emitting device A1.
- FIGS. 9 to 12 show a semiconductor light emitting device according to the third embodiment of the present invention.
- the number and arrangement of the plurality of LED chips 3 are different from those in the first and second embodiments described above.
- the plurality of LED chips 3 are arranged concentrically.
- One pad 7 a is provided at a position surrounded by the plurality of LED chips 3. This pad 7a is used as a force sword as a common electrode.
- the two heat dissipating members 2 have a curved shape in accordance with the arrangement of the plurality of LED chips 3.
- the pad 7a used as a force sword can be made small, which is advantageous for downsizing the semiconductor light emitting device A3.
- FIG. 13 is a plan view showing a modification of the semiconductor light emitting device A3. Shown in the figure The structure of the semiconductor light emitting device A3 ′ is substantially the same as that of the semiconductor light emitting device described above except that only one wire is bonded to each LED chip 3 (and the necessary change accompanying this). The configuration is the same as A3. In the case of the example shown in FIG. 13, each LED chip 3 is connected to the power supply wiring on the bottom surface, for example. According to such a configuration, it is possible to further reduce the rate at which the light emitted from the LED chip 3 is blocked by the wire.
- FIG. 14 shows a semiconductor light emitting device according to the fourth embodiment of the present invention.
- the semiconductor light-emitting device A4 shown in the third embodiment is similar to the third embodiment described above in that the plurality of LED chips 3 are arranged concentrically, and the lens 5a is not formed on the transparent resin 5. Different from form. Even with such a configuration, the semiconductor light emitting device A4 can be increased in luminance and size, and can be made thinner.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN2007800361968A CN101523620B (zh) | 2006-09-29 | 2007-09-27 | 半导体发光装置 |
JP2008536420A JPWO2008038708A1 (ja) | 2006-09-29 | 2007-09-27 | 半導体発光装置 |
US12/443,295 US8148746B2 (en) | 2006-09-29 | 2007-09-27 | Semiconductor light emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-267483 | 2006-09-29 | ||
JP2006267483 | 2006-09-29 |
Publications (1)
Publication Number | Publication Date |
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WO2008038708A1 true WO2008038708A1 (fr) | 2008-04-03 |
Family
ID=39230143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/068798 WO2008038708A1 (fr) | 2006-09-29 | 2007-09-27 | Dispositif d'émission de lumière à semiconducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US8148746B2 (ja) |
JP (1) | JPWO2008038708A1 (ja) |
KR (1) | KR101090575B1 (ja) |
CN (1) | CN101523620B (ja) |
WO (1) | WO2008038708A1 (ja) |
Cited By (8)
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JP2010092956A (ja) * | 2008-10-06 | 2010-04-22 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
EP2360416A1 (de) * | 2010-02-24 | 2011-08-24 | EV Group GmbH | Leuchteinrichtung und Verfahren zur Herstellung einer solchen |
JP2012502453A (ja) * | 2008-09-04 | 2012-01-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
JP2012227537A (ja) * | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
JP2012227536A (ja) * | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
JP2013164571A (ja) * | 2012-01-10 | 2013-08-22 | Rohm Co Ltd | Ledフラッシュモジュール、ledモジュール、及び撮像装置 |
WO2013153938A1 (ja) * | 2012-04-11 | 2013-10-17 | 東芝ライテック株式会社 | 光半導体光源及び車両用照明装置 |
JP2013218972A (ja) * | 2012-04-11 | 2013-10-24 | Harison Toshiba Lighting Corp | 光半導体光源及び車両用照明装置 |
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CN102834942B (zh) * | 2010-04-09 | 2016-04-13 | 罗姆股份有限公司 | Led模块 |
JP5522462B2 (ja) * | 2010-04-20 | 2014-06-18 | 東芝ライテック株式会社 | 発光装置及び照明装置 |
CN101846256A (zh) * | 2010-05-04 | 2010-09-29 | 蔡州 | Led光源 |
TWM397030U (en) * | 2010-08-16 | 2011-01-21 | Liang Meng Plastic Share Co Ltd | LED packaging structure |
CN102254907B (zh) * | 2010-09-29 | 2013-07-10 | 深圳市聚飞光电股份有限公司 | 一种led及其封装方法 |
DE102011107893A1 (de) * | 2011-07-18 | 2013-01-24 | Heraeus Noblelight Gmbh | Optoelektronisches Modul mit verbesserter Optik |
KR101974349B1 (ko) * | 2012-10-04 | 2019-05-02 | 삼성전자주식회사 | 발광모듈과 이를 이용한 조명장치 |
JP6338409B2 (ja) * | 2014-03-14 | 2018-06-06 | アルパッド株式会社 | 発光装置及びその製造方法 |
EP3356184B1 (en) * | 2015-10-01 | 2021-06-30 | Emergency Technology, Inc. | Lighting element for a vehicle |
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- 2007-09-27 KR KR1020097004937A patent/KR101090575B1/ko not_active IP Right Cessation
- 2007-09-27 US US12/443,295 patent/US8148746B2/en active Active
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JP2012502453A (ja) * | 2008-09-04 | 2012-01-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
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JP2010092956A (ja) * | 2008-10-06 | 2010-04-22 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
EP2360416A1 (de) * | 2010-02-24 | 2011-08-24 | EV Group GmbH | Leuchteinrichtung und Verfahren zur Herstellung einer solchen |
JP2013164571A (ja) * | 2012-01-10 | 2013-08-22 | Rohm Co Ltd | Ledフラッシュモジュール、ledモジュール、及び撮像装置 |
WO2013153938A1 (ja) * | 2012-04-11 | 2013-10-17 | 東芝ライテック株式会社 | 光半導体光源及び車両用照明装置 |
JP2013218972A (ja) * | 2012-04-11 | 2013-10-24 | Harison Toshiba Lighting Corp | 光半導体光源及び車両用照明装置 |
JP2012227537A (ja) * | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
JP2012227536A (ja) * | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
Also Published As
Publication number | Publication date |
---|---|
US20100072496A1 (en) | 2010-03-25 |
KR20090040461A (ko) | 2009-04-24 |
CN101523620A (zh) | 2009-09-02 |
US8148746B2 (en) | 2012-04-03 |
CN101523620B (zh) | 2012-06-06 |
JPWO2008038708A1 (ja) | 2010-01-28 |
KR101090575B1 (ko) | 2011-12-08 |
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