WO2008035530A1 - Procédé de découpe et procédé de fabrication de plaquette épitaxiale - Google Patents
Procédé de découpe et procédé de fabrication de plaquette épitaxiale Download PDFInfo
- Publication number
- WO2008035530A1 WO2008035530A1 PCT/JP2007/066231 JP2007066231W WO2008035530A1 WO 2008035530 A1 WO2008035530 A1 WO 2008035530A1 JP 2007066231 W JP2007066231 W JP 2007066231W WO 2008035530 A1 WO2008035530 A1 WO 2008035530A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cutting
- ingot
- slurry
- supply temperature
- grooved roller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/04—Processes
- Y10T83/0405—With preparatory or simultaneous ancillary treatment of work
- Y10T83/0443—By fluid application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/929—Tool or tool with support
- Y10T83/9292—Wire tool
Definitions
- the present invention relates to a cutting method for cutting a large number of wafers from a silicon ingot, a compound semiconductor ingot or the like using a wire saw, and manufacturing of an epitaxial wafer in which an epitaxial layer is stacked on a wafer cut by the cutting method. Regarding the method.
- a wire saw is a device that moves a wire (high-strength steel wire) at high speed, applies a slurry to the ingot (work), cuts the wafer, and simultaneously cuts a large number of wafers (Japanese Patent Laid-Open No. 9 262826). No. publication).
- FIG. 11 shows an outline of an example of a general wire saw.
- a wire saw 101 mainly includes a wire 102 for cutting an ingot, a grooved roller 103 (wire guide) wound with the wire 102, and a mechanism 104 for applying tension to the wire 102. , A mechanism 105 for sending out an ingot to be cut, and a mechanism 106 for supplying slurry at the time of cutting.
- the wire 102 is unwound from one wire reel 107, and passes through a traverser 108 through a tension applying mechanism 104 including a powder clutch (constant torque motor 109), a dancer roller (dead weight) (not shown), and the like. It is in the attached roller 103.
- the wire 102 is wound around the grooved roller 103 about 300 to 400 times, and is then wound around the wire reel 107 ′ through the other tension applying mechanism 104 ′.
- the grooved roller 103 is a roller in which polyurethane resin is press-fitted around a steel cylinder and grooves are cut at a constant pitch on the surface, and the wound wire 102 is a driving motor.
- the motor 110 can be driven in a reciprocating direction at a predetermined cycle.
- an ingot feeding mechanism 105 As shown in FIG.
- the ingot is sent out to the wire 102 wound around the grooved roller 103.
- the ingot feeding mechanism 105 includes an ingot feeding table 111 for feeding an ingot, an LM guide 112, an ingot clamp 113 for holding the ingot, a sliced plate 114, and the like, and is controlled along the LM guide 112 by computer control. By driving the feed table 111, it is possible to feed out the ingot fixed to the tip at a pre-programmed feed speed.
- a nozzle 115 is provided in the vicinity of the grooved roller 103 and the wound wire 102 so that the slurry can be supplied from the slurry tank 116 to the grooved roller 103 and the wire 102 at the time of cutting. It has become.
- a slurry tank 117 is connected to the slurry tank 116 so that the temperature of the slurry to be supplied can be adjusted!
- the wafer cut out using the wire saw 101 as described above may sometimes become a product by performing epitaxial growth after polishing (polishing).
- polishing In the epitaxial growth of silicon wafers, a single-crystal silicon thin film (epitaxial layer) with a thickness of several meters is grown on the polished wafer surface by chemical vapor deposition (CVD), etc. Improve physical properties and build device elements on the surface of this epitaxial layer.
- a P-type low-resistance wafer having a variety of combinations in the woofer and the epitaxial layer is grown on a P-type epitaxial layer having a normal resistance.
- a characteristic feature of this epitaxial growth is that, as shown in Fig. 13, Bow is generated in the grown wafer.
- FIG. 13 shows an example of an epitaxial wafer 221 in which an epitaxial layer 223 is laminated on a wafer 222.
- P-type low resistance wafer 222 contains a large amount of boron (B) having a smaller atomic radius than silicon as a dopant, and therefore has an average interstitial distance smaller than that of non-doped silicon.
- the normal resistance P-type epitaxial layer 223 has a relatively larger average interstitial distance than a wafer having a small amount of dopant. For this reason, an epitaxy layer 223 is formed on wafer 222.
- the bow change tends to occur in the direction in which the epitaxial layer 223 becomes convex.
- an N-type epitaxial layer with a small amount of dopant and a normal resistance was grown on an N-type low-resistance wafer containing a large amount of arsenic (As) having a larger atomic radius than silicon as a dopant.
- As arsenic
- the Bow change occurs in the direction in which the epitaxy layer becomes concave.
- FIG. 14 shows an example of a Bow change due to epitaxial growth.
- the horizontal axis is the Bow value in the wafer (PW) before the epitaxial growth polished after slicing (or ueno after the slice), and the vertical axis is the epitaxy of the PW. It is the Bow value in the Epitakial Suehaha (EPW) that has grown.
- Fig. 14 (B) is a graph showing the distribution ratio of the Bow values for the PW and EPW above, with the Bow values on the horizontal axis.
- the present invention has been made in view of the above problems, and when cutting an ingot using a wire saw, the warp of all wafers with a simple and good reproducibility is cut in one direction.
- the purpose is to provide a cutting method that can be used. Furthermore, by using this cutting method, it is not necessary to measure the sliced wafer bow and to replace the front and back of the sliced wafer as before! /, To provide a manufacturing method for epitaxy wafer With the goal.
- a wire is wound around a plurality of grooved rollers, and a cutting slurry is supplied to the grooved roller and the wire is pressed against an ingot while running.
- a test for cutting the ingot while controlling the supply temperature of the cutting slurry to the grooved roller in advance is carried out!
- the shaft of the grooved roller Investigating the relationship between the directional displacement and the supply temperature of the cutting slurry, and setting the supply temperature profile of the cutting slurry from the relationship between the axial displacement of the grooved roller and the supply temperature of the cutting slurry, By supplying the cutting slurry based on the supply temperature profile, the ingot is cut while controlling the axial displacement of the grooved roller, and the warpage of all the wafers to be cut is unidirectional.
- a cutting method characterized by aligning to the above is provided.
- a test for cutting the ingot while cutting slurry is supplied to the grooved roller while controlling the supply temperature, and the axial displacement and cutting of the grooved roller are performed. Investigate the relationship with the slurry supply temperature. By conducting such an investigation in advance, the relationship between the axial displacement of the grooved roller unique to each wire saw used and the supply temperature of the cutting slurry can be obtained in advance.
- the supply of the cutting slurry in which warpage of the wafer to be cut is aligned in one direction based on the relationship between the axial displacement of the grooved roller obtained as described above and the supply temperature of the cutting slurry. Set the temperature profile. Then, by supplying a cutting slurry based on the profile, the ingot is cut while controlling the axial displacement of the grooved roller of the wire saw to be used, and the warpage of all the wafers to be cut is reduced. Align in the direction.
- the cutting slurry supply temperature profile file is set based on the above-mentioned relationship unique to each wire saw, and the cutting slurry is actually supplied in accordance with the profile, cutting is performed easily and with good reproducibility. It is possible to align the warpage of all wafers to be unidirectional. Since the warpage of all wafers can be aligned in one direction, the shape of each wafer is measured in advance so that it can be epitaxially grown on the desired surface before stacking the epitaxial layer, as will be described later. However, the work of changing the orientation of the bow by swapping the front and back sides of the wafer can be omitted.
- the groove temperature can be adjusted by adjusting the supply temperature profile of the cutting slurry set based on the relationship. It is possible to adjust the amount of warpage of all the wafers to be cut by adjusting the axial displacement of the attached roller.
- the supply temperature profile of the cutting slurry is at least a force S that makes the supply temperature gradually increase after the ingot cutting depth reaches half of the diameter.
- the supply temperature profile of the cutting slurry can be a profile in which the supply temperature gradually increases from the start of cutting the ingot.
- the supply temperature profile of the cutting slurry is at least a profile in which the supply temperature gradually increases after the ingot cutting depth reaches 1/2 of the diameter, or cutting.
- the supply temperature profile of the slurry is a profile in which the supply temperature gradually increases from the start of ingot cutting, it is possible to more easily align the warpage of all the wafers to be cut in one direction. .
- the present invention is characterized in that a wafer having warpage aligned in one direction is cut out by the above-described cutting method, and an epitaxial layer is laminated on the wafer having warpage aligned in one direction.
- a method for manufacturing Epitaxchialueha is provided.
- a wafer having warpage aligned in one direction is cut out by the above-described cutting method, and an epitaxial layer is laminated on the wafer having the warpage aligned in one direction.
- the warpage of all wafers can be cut in a single direction, and the cutting can be performed easily and with good reproducibility.
- the warpage of all wafers can be cut in one direction, it is possible to cut the wafer bows from the ingot and replace the front and back before performing the epitaxial growth. Can be significantly improved.
- FIG. 1 is a schematic view showing an example of a wire saw that can be used in the cutting method of the present invention.
- FIG. 2 is a schematic plan view showing an example of the structure of a grooved roller.
- FIG. 3 is an explanatory diagram illustrating a method for measuring the amount of expansion / contraction of a grooved roller.
- FIG. 4 is a graph showing an example of the relationship between the axial displacement of the grooved roller 3 and the supply temperature of the cutting slurry.
- FIG. 5 is a graph showing an example of a supply temperature profile of a cutting slurry set from the results of a preliminary test.
- FIG. 6 is an explanatory diagram showing a process of cutting so that the wafer warp direction is one direction.
- FIG. 7 is a graph showing the relationship between the axial displacement of the grooved roller and the supply temperature of the cutting slurry obtained in the preliminary test of the example.
- FIG. 8 is a graph showing supply temperature profiles of cutting slurries in Examples and Comparative Examples.
- FIG. 9 is a graph showing the relationship between the workpiece cutting depth and the axial displacement of the grooved roller.
- A Example, (B) Comparative example.
- FIG. 10 is a graph showing the measurement results of Bow for all slice wafers.
- FIG. 11 is a schematic view showing an example of a wire saw used in a conventional cutting method.
- FIG. 12 is a schematic view showing an example of an ingot feeding mechanism.
- FIG. 13 is an explanatory diagram for explaining the cause of Bow change due to epitaxy growth.
- FIG.14 (A) This graph shows the correlation between the Epitaxial woofer (EPW) and the woofer (PW) Bow ⁇ t. (B) A graph showing the distribution of the ratio of the Epitaxial woofer (EPW) and the woofer (PW) at each Bow value.
- FIG. 15 is an explanatory view showing an example of the extension and cutting trajectory of the grooved roller during ingot cutting.
- the orientation of the bow should be aligned in one direction in advance, and if the epitaxial layer is laminated so as to counteract the wafer bow, the resulting epitaxial wafer is produced.
- the size of the bow can be minimized, which is preferable as a product.
- Fig. 14 (A) if the wafer bow is made at the time of slicing so that the average value is about 1 m, it is expected that the absolute value of the Epitaxial wafer will be minimized. (However, in practice, if the absolute value of the wafer bow is too large, it will be difficult to reduce waviness during slicing and nanotopography in double-head grinding, so the actual target ⁇ I will be about 5 m on average. ! / Is considered reasonable).
- the direction of the cut out bow of the wafer is not always uniform in one direction. Therefore, before conducting epitaxial growth, the shape of all wafers is measured. And a process of aligning the direction of warping in one direction was necessary.
- the supply temperature of the cutting slurry is 23 ° C at the start of cutting, then the temperature is lowered to 22 ° C in the middle of the cutting, and rises from around the end of cutting
- An example is shown.
- the cutting trajectory is different at each position in the axial direction of the ingot, and therefore the orientations of the cut out bows of the wafer are not all aligned in one direction.
- the present inventors first conducted a preliminary test to investigate the relationship between the supply temperature of the cutting slurry and the axial displacement of the grooved roller, and the warpage of the wafer to be cut was found from that relationship.
- Set the supply temperature profile of the cutting slurry aligned in one direction and then Based on the above, we have devised a cutting method that supplies slurries for cutting and cuts the ingots and aligns the warpage of all wafers to be cut in one direction. With such a cutting method, the warpage of all of the cut wafers is aligned in one direction.
- FIG. 1 shows an example of a wire saw that can be used in the cutting method of the present invention.
- the wire saw 1 mainly includes a wire 2 for cutting an ingot, a grooved roller 3, a wire tension applying mechanism 4, an ingot feeding mechanism 5, and a slurry supply mechanism 6.
- the slurry supply mechanism 6 As the slurry supply mechanism 6, a nozzle 15 for supplying a cutting slurry to the grooved roller 3 (wire 2) is disposed.
- the cutting slurry supplied from the nozzle 15 can control the supply temperature. Specifically, for example, as shown in FIG. 1, the supply temperature of the cutting slurry is controlled by connecting the slurry tank 16 to the nozzle 15 via the heat exchanger 19 controlled by the computer 18. It can be configured.
- slurry is not specifically limited, The thing similar to the past can be used.
- GC silicon carbide
- abrasive grains can be dispersed in a liquid.
- the nozzle 15 for supplying the cutting slurry and the ingot feeding mechanism 5 are connected to the computer 18, and the predetermined amount of ingot, that is, the predetermined amount of cutting of the ingot is determined by a preset program.
- the nozzle 15 can automatically spray a predetermined amount of temperature-controlled cutting slurry onto the grooved roller 3 (wire 2). ing.
- the ingot feed amount, slurry injection amount and timing, and the slurry supply temperature can be controlled as desired by the computer 18, and the control means is not particularly limited to this.
- the wire 2 In addition to the slurry supply mechanism 6, the wire 2, the grooved roller 3, the wire tension applying mechanism 4, and the ingot feeding mechanism 5 are the same as those of the wire saw 101 used in the conventional cutting method of FIG. can do.
- the type and thickness of the wire 2, the groove pitch of the grooved roller 3, and the configuration of other mechanisms are not particularly limited, and can be determined each time so as to achieve the desired cutting conditions according to the conventional method. it can.
- the wire 2 is made of a special piano wire having a width of about 0.13 mm to 0.18 mm, and can be a grooved roller 3 having a groove pitch of (desired wafer thickness + cutting allowance).
- FIG. 21 An example of the grooved roller 3 that has been used conventionally is shown in FIG.
- Bearings 21 and 21 ′ supporting the grooved roller shaft 20 are disposed at both ends of the grooved roller 3 1S in consideration of the change in the axial direction of the grooved roller 3 during cutting described above.
- the bearing 21 is a radial type
- the grooved roller 3 can extend in the axial direction on the radial type bearing 21 side
- the bearing 21 ′ is a thrust type.
- this thrust type bearing 21 ' has a structure that is difficult to extend.
- the grooved roller 3 has such a structure, and if the grooved roller 3 changes its length in the axial direction, it should not be fixed together on both sides so that the load force S is not applied to the device too much. One side can cope with the change.
- the grooved roller 3 in the wire saw 1 to be used is not limited to the above type.
- an eddy current sensor is disposed close to the axial direction of the grooved roller. This is so that the axial displacement of the grooved roller 3 can be measured during the preliminary test.
- the measurement of the axial displacement of the grooved roller 3 is not limited to the above-mentioned means, but an eddy current sensor is preferably used because the measurement can be performed with high accuracy without contact.
- Each sensor is connected to a computer 18 so that data obtained by measurement can be processed by the computer 18.
- the profile of the supply temperature of the cutting slurry at this time is not particularly limited as long as it is a profile that can reliably measure the axial displacement of the grooved roller 3 corresponding to each supply temperature. For example, by starting to supply at the same temperature as the ingot at the start of cutting and gradually increasing the supply temperature at a speed that can follow the change in the supply temperature of the cutting slurry, the grooved roller 3 at each supply temperature 3 The axial displacement of can be measured.
- the upper line in Fig. 4 shows the amount of the grooved roller 3 extending backward (that is, the thrust type bearing 21, side), and the lower line shows the amount of extending forward (radial type bearing 21 side). ing.
- the temperature of the cutting slurry is high.
- the grooved roller 3 does not extend much on the thrust type bearing 21 'side on the rear side, but is extended on the radial type bearing 21 side on the front side. .
- this supply temperature profile When this supply temperature profile is set, the profile is set so that a cutting trajectory is formed in which the warpage of all wafers to be cut is aligned in one direction.
- This profile is preferably set using, for example, the computer 18 because it can be set easily and accurately.
- the data obtained in the preliminary test is processed by the computer 18 to supply the appropriate cutting slurry so that the desired cutting trajectory determined in advance, i.e. the grooved roller changes axially as desired.
- Temperature profile can be obtained
- the supply temperature profile of the above-described cutting slurry will be described more specifically.
- the wire saw to be used will be described as the wire saw 1 having the structure shown in FIGS. That is, this is a device that can obtain the relationship between the axial displacement of the grooved roller 3 and the supply temperature of the cutting slurry as shown in FIG.
- the present invention is not limited to the use of such a wire saw.
- the supply temperature profile of the cutting slurry can be adjusted appropriately according to the characteristics of each wire saw.
- the supply temperature profile Ts shown in FIG. 5 (A) is a profile in which the supply temperature gradually rises after the ingot cutting depth reaches 1/2 or more of the diameter. For comparison, the supply temperature profile Ts' of a conventional standard cutting slurry is shown.
- the grooved roller The front end of 3 extends forward, and the rear end also extends slightly forward when the ingot cutting depth is more than half the diameter. Therefore, the cutting trajectory at both ends of the ingot is directed toward the rear of the ingot, and has a convex warped shape (the cutting trajectory at the rear end of the ingot has a reverse trajectory near the start of cutting and near the end of cutting, and near the center of the ingot. Can be the turning point of the entire warp. Therefore, the warpage of all the wafers to be cut can be cut in one direction, and Fig.
- FIG. 6 shows an example of the process in which the warpage of all the wafers to be cut is cut in one direction.
- the warpage of the cutting tracks is aligned when the grooved roller stretches greatly in the forward direction.
- the direction of warping can also be made the same as the direction of warping of the cutting locus at the front end of the ingot.
- the manufacturing method of the epitaxial wafer of the present invention cuts out a wafer whose warpage is aligned in one direction by the cutting method of the present invention as described above, and the wafer having the warpage aligned in one direction.
- This is a method of manufacturing by stacking a epitaxial layer.
- the direction of warpage depends on the axial position of the ingot. Measure the shape of each wafer, and check the direction of the warp, and if the direction is reversed, turn the front and back of the wafer so that the warp direction of all wafers is aligned in one direction. I had to. Such an operation is extremely complicated and requires cost and labor.
- a process such as polishing can be performed in advance on wafers whose warpage is aligned in one direction.
- the cutting method of the present invention was carried out.
- a silicon ingot similar to a silicon ingot having a diameter of 300 mm and an axial length of 180 mm used in this cutting process was cut into a wafer shape while supplying the cutting slurry at a controlled supply temperature.
- a wire with a width of 160 m was used, a tension of 2.5 kgf was applied, the wire was run in a reciprocating direction at a cycle of 60 s / c at an average speed of 500 m / min and cut.
- the slurry used was a mixture of GC # 1500 and coolant at a weight ratio of 1: 1. These conditions are the same as the cutting conditions in the subsequent cutting step.
- the silicon ingot was cut as a main cutting step, and 170 slice wafers were obtained.
- the cutting conditions are the same as in the previous preliminary test as described above.
- Fig. 9 shows the relationship between the ingot cutting depth and the axial displacement of the grooved roller.
- the curve of the cutting trajectory has a convex rearward direction at each position from the front end portion to the rear end portion of the ingot. .
- FIG. 10 (A) shows the results of measuring the bow shape of all wafers cut out in the above example and measuring the bow. As shown in Fig. 10 (A), it can be seen that the bows of all slice wafers are in the range of about 36 mm, and the bow values are aligned in the negative direction.
- the direction of the warpage of the slice wafer is roughly divided into a minus side at the front end of the ingot and a plus side at the rear end. Furthermore, in the axial center region of the ingot, the bow value is violently switched between minus and plus, indicating that the directions of warping are not aligned at all. As described above, if the change in the amount of axial displacement is small at each position in the axial direction of the grooved roller throughout the entire cutting process, this is likely to occur. .
- the present invention is not limited to the above embodiment.
- the above embodiment is merely an example, and has any configuration that is substantially the same as the technical idea described in the claims of the present invention and that exhibits the same operational effects. Also technical of the present invention Included in the range.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/310,663 US8210906B2 (en) | 2006-09-22 | 2007-08-22 | Slicing method and method for manufacturing epitaxial wafer |
| KR1020097005661A KR101356190B1 (ko) | 2006-09-22 | 2007-08-22 | 절단방법 및 에피택셜 웨이퍼의 제조방법 |
| CN2007800342384A CN101517710B (zh) | 2006-09-22 | 2007-08-22 | 切断方法以及外延晶片的制造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-257392 | 2006-09-22 | ||
| JP2006257392A JP4991229B2 (ja) | 2006-09-22 | 2006-09-22 | 切断方法およびエピタキシャルウエーハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008035530A1 true WO2008035530A1 (fr) | 2008-03-27 |
Family
ID=39200359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2007/066231 Ceased WO2008035530A1 (fr) | 2006-09-22 | 2007-08-22 | Procédé de découpe et procédé de fabrication de plaquette épitaxiale |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8210906B2 (ja) |
| JP (1) | JP4991229B2 (ja) |
| KR (1) | KR101356190B1 (ja) |
| CN (1) | CN101517710B (ja) |
| TW (1) | TWI437628B (ja) |
| WO (1) | WO2008035530A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022244421A1 (ja) * | 2021-05-20 | 2022-11-24 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
| US20230234261A1 (en) * | 2020-06-10 | 2023-07-27 | Siltronic Ag | Method for separating a plurality of slices from workpieces by means of a wire saw during a sequence of separation processes |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5343409B2 (ja) * | 2008-06-06 | 2013-11-13 | 株式会社Sumco | 半導体ウェーハの湾曲判定方法、膜付きウェーハの製造方法 |
| JP2010029955A (ja) * | 2008-07-25 | 2010-02-12 | Shin Etsu Handotai Co Ltd | ワイヤソーの運転再開方法及びワイヤソー |
| JP5104830B2 (ja) | 2008-09-08 | 2012-12-19 | 住友電気工業株式会社 | 基板 |
| KR20140100549A (ko) * | 2011-12-01 | 2014-08-14 | 엠이엠씨 일렉트로닉 머티리얼스 쏘시에떼 퍼 아찌오니 | 와이어 소우에서 슬라이싱된 웨이퍼들의 표면 프로파일들을 제어하기 위한 시스템들 및 방법들 |
| US20130139800A1 (en) * | 2011-12-02 | 2013-06-06 | Memc Electronic Materials, Spa | Methods For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw |
| US20130144420A1 (en) * | 2011-12-01 | 2013-06-06 | Memc Electronic Materials, Spa | Systems For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw |
| US20130139801A1 (en) * | 2011-12-01 | 2013-06-06 | Memc Electronic Materials, Spa | Methods For Controlling Displacement Of Bearings In A Wire Saw |
| TWI599446B (zh) * | 2013-03-25 | 2017-09-21 | Sapphire polishing pad dresser production methods | |
| JP6132621B2 (ja) * | 2013-03-29 | 2017-05-24 | Sumco Techxiv株式会社 | 半導体単結晶インゴットのスライス方法 |
| JP6281537B2 (ja) * | 2015-08-07 | 2018-02-21 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
| JP6222393B1 (ja) * | 2017-03-21 | 2017-11-01 | 信越半導体株式会社 | インゴットの切断方法 |
| JP6693460B2 (ja) * | 2017-04-04 | 2020-05-13 | 信越半導体株式会社 | ワークの切断方法 |
| DE102018221922A1 (de) | 2018-12-17 | 2020-06-18 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium |
| DE102019207719A1 (de) * | 2019-05-27 | 2020-12-03 | Siltronic Ag | Verfahren zum Abtrennen einer Vielzahl von Scheiben von Werkstücken während einer Anzahl von Abtrennvorgängen mittels einer Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium |
| EP3922387A1 (de) * | 2020-06-10 | 2021-12-15 | Siltronic AG | Verfahren zum abtrennen einer vielzahl von scheiben mittels einer drahtsäge von werkstücken während einer abfolge von abtrennvorgängen |
| EP3922389A1 (de) * | 2020-06-10 | 2021-12-15 | Siltronic AG | Verfahren zum abtrennen einer vielzahl von scheiben mittels einer drahtsäge von werkstücken während einer abfolge von abtrennvorgängen |
| CN116968201A (zh) * | 2023-06-27 | 2023-10-31 | 宁夏中欣晶圆半导体科技有限公司 | 12英寸切割硅片形貌的控制方法 |
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| US6652356B1 (en) | 1999-01-20 | 2003-11-25 | Shin-Etsu Handotai Co., Ltd. | Wire saw and cutting method |
| US20030064902A1 (en) | 2001-10-03 | 2003-04-03 | Memc Electronic Materials Inc. | Apparatus and process for producing polished semiconductor wafers |
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- 2007-08-22 WO PCT/JP2007/066231 patent/WO2008035530A1/ja not_active Ceased
- 2007-08-22 KR KR1020097005661A patent/KR101356190B1/ko active Active
- 2007-08-22 CN CN2007800342384A patent/CN101517710B/zh active Active
- 2007-09-14 TW TW96134574A patent/TWI437628B/zh active
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| JPH05185419A (ja) | 1992-01-14 | 1993-07-27 | Shin Etsu Handotai Co Ltd | ワイヤーソーによるワークの切断方法及び切断装置 |
| JPH09262826A (ja) | 1996-03-27 | 1997-10-07 | Shin Etsu Handotai Co Ltd | ワイヤソーによるワーク切断方法及び装置 |
| JP2003001624A (ja) * | 2001-05-10 | 2003-01-08 | Wacker Siltronic Ag | 被加工物から基板を切り離す方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20230234261A1 (en) * | 2020-06-10 | 2023-07-27 | Siltronic Ag | Method for separating a plurality of slices from workpieces by means of a wire saw during a sequence of separation processes |
| US12479129B2 (en) * | 2020-06-10 | 2025-11-25 | Siltronic Ag | Method for separating a plurality of slices from workpieces by means of a wire saw during a sequence of separation processes |
| WO2022244421A1 (ja) * | 2021-05-20 | 2022-11-24 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4991229B2 (ja) | 2012-08-01 |
| JP2008078474A (ja) | 2008-04-03 |
| US20090288530A1 (en) | 2009-11-26 |
| CN101517710B (zh) | 2012-10-03 |
| KR20090057029A (ko) | 2009-06-03 |
| KR101356190B1 (ko) | 2014-01-24 |
| TW200834696A (en) | 2008-08-16 |
| TWI437628B (zh) | 2014-05-11 |
| CN101517710A (zh) | 2009-08-26 |
| US8210906B2 (en) | 2012-07-03 |
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