WO2008025725A1 - Procédé de scellement hermétique et de mise en contact électrique d'une structure micro-électromécanique et microsystème ainsi produit (mems) - Google Patents

Procédé de scellement hermétique et de mise en contact électrique d'une structure micro-électromécanique et microsystème ainsi produit (mems) Download PDF

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Publication number
WO2008025725A1
WO2008025725A1 PCT/EP2007/058788 EP2007058788W WO2008025725A1 WO 2008025725 A1 WO2008025725 A1 WO 2008025725A1 EP 2007058788 W EP2007058788 W EP 2007058788W WO 2008025725 A1 WO2008025725 A1 WO 2008025725A1
Authority
WO
WIPO (PCT)
Prior art keywords
cover plate
hole
holes
microelectromechanical
contact
Prior art date
Application number
PCT/EP2007/058788
Other languages
German (de)
English (en)
Inventor
Roy Knechtel
Original Assignee
X-Fab Semiconductor Foundries Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X-Fab Semiconductor Foundries Ag filed Critical X-Fab Semiconductor Foundries Ag
Priority to DE112007001698T priority Critical patent/DE112007001698A5/de
Priority to US12/438,824 priority patent/US8021906B2/en
Publication of WO2008025725A1 publication Critical patent/WO2008025725A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0145—Hermetically sealing an opening in the lid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Definitions

  • MEMS microelectromechanical structure and microsystem
  • the invention relates to the production of microsystems with microelectromechanical structures, wherein a vertical electrical via of cover plates for microelectromechanical structure is used.
  • MEMS microelectromechanical systems
  • wafer bonding wafer bonding
  • the lid When the lid is applied, it encloses a defined atmosphere with a certain pressure, which is important for the function of the component.
  • a certain pressure which is important for the function of the component.
  • connection plane cover and system chip or disk
  • pads bond pads
  • the cover plates must have large openings through which the connection surfaces (usually very many) are accessible. These breakthroughs can be effectively only in the wafer or disc bond, before or after bonding manufacture, which is always associated with high costs (eg, deep silicon etching, glass structuring). Due to the breakthroughs, however, the mechanical strength of the shields is greatly reduced, so that they are prone to breakage. Therefore, the openings for the pads can not be designed and arranged arbitrarily large.
  • the pads must be located adjacent to the active microelectromechanical structures, i. additional space is required on the lo chip, which limits integration density and increases costs. In extreme cases, the pads and the active microelectromechanical structures may have the same footprint.
  • the pads are not as usual of integrated i5 standard circuits on the chip surface, but are the thickness of the
  • vertical vias can be used to make electrical contact from the front to the back through a hole in the cover disk, so that covered structures can be electrically connected.
  • Various methods are known for producing such plated-through holes.
  • the through holes complete with
  • the invention has for its object to provide a method and a microelectromechanical structure, wherein the process of the via simplified to reduce the error rate and cost and to increase the reliability of the components.
  • the object is achieved in one aspect by a method for hermetically sealing a microelectromechanical structure.
  • the method includes providing a system disk on which the microelectromechanical structure having a patterned metallization layer with a pad is provided.
  • the method further comprises producing a metallic interconnect structure on an upper side of a cover plate, wherein a contact hole region of the metallic interconnect structure is aligned with a contact point of the structured metallization layer when the cover plate is connected to a lower side with the system disk.
  • a contact hole is also formed through the cover plate at the via region and a hermetically sealed closure for the microelectromechanical structure and electrical contact between the metal interconnect structure and the patterned metallization layer is formed by sealing the contact hole with an electrically conductive glass solder paste.
  • the method according to the invention thus makes it possible to contact the internal metallization layer of the MEM (microelectromechanical) structure by means of a vertical plated-through hole, which, in addition to the electrical connection, also ensures the gas-tight closure of the MEM structure.
  • the method is easy to use and universally applicable at a significant cost savings in
  • the metal particles Expelling the binder and fusing the glass portion, the metal particles form electrically conductive paths that conduct the electrical current very well and have a low ohmic resistance.
  • the metallic interconnect structure may be structured in any suitable manner, so as to allow the connection to the periphery, such as housings or printed circuit boards.
  • the manufacturing comprises a hermetically sealed
  • Closure and an electrical contact comprises: connecting the underside of the cover plate with a connection point on the system disk, wherein the connection point surrounds the structured metallization layer.
  • the connection point is preferably designed such that all the electrical connections required for contacting the MEM structure lie within the connection point.
  • the contact hole is made before connecting the
  • the contact hole is made after connecting the underside of the cover plate with the connection point.
  • producing a hermetically sealed closure and an electrical connection comprises: filling the electrically conductive glass solder paste and carrying out a heat treatment of a first type for
  • the heat treatment of the first type is carried out prior to joining the underside of the cover disk with the connection point, so that already a tight closure of the contact hole is produced by steps that are performed independently of the system disk.
  • the contacting then takes place in the connection of the system disk and the cover disk, wherein here also the already dense through hole provides both the electrical contact as well as for the tightness (together with the connection point) of the MEM structure.
  • the method further comprises: performing a heat treatment of a second kind for drying the glass solder paste before
  • Performing the heat treatment of the first type wherein in a variant, the heat treatment of the second type before connecting the underside of the cover plate with the joint and the heat treatment of the first kind are carried out after the connection.
  • the heat treatment of the second type ie the drying, which is carried out at lower temperatures compared to the treatment of the first type, a better flexibility can be achieved in the process, since the glass solder paste can be used after drying in other processes without negative Impacts through the solder paste occur.
  • the method further comprises: carrying out a further heat treatment of the first type. That is, the solder paste is once more melted, whereby an efficient contacting of the metallization is achieved, if the paste already for example already for a higher thermal and mechanical stability once it was melted.
  • the further heat treatment of the first kind prior to bonding and the heat treatment of the first type after bonding the underside of the cover plate and the joint can be carried out, even before bonding a very stable filling in the contact hole is present.
  • the further heat treatment results that a very reliable connection to the underlying material and there may be a reconfiguration after the joining process in the material of the contact hole.
  • the heat treatment of the first type is carried out in a joining process for connecting the underside of the cover disk to the joint. That is, the process temperature and the process duration in the joining process are chosen so that the melting temperature of the paste for the desired Time is reached or exceeded, so that after the joining process both the electrical connection and the complete tightness are reached.
  • the cover plate consists of an insulating material, such as glass, so that the interconnect structure can be made without further action on the cover plate.
  • the cover disk comprises a conductive material and an insulating layer is formed at least on the upper side and the lower side prior to the production of the metallic interconnect structure.
  • an insulating layer is formed at least on the upper side and the lower side prior to the production of the metallic interconnect structure.
  • a part of the insulating layer is formed on the lower side and the upper side prior to forming the through-hole, and the rest of the insulating layer is formed on the side walls of the contact hole after its manufacture.
  • the interconnect structure can be formed on the cover plate before the production of the contact hole, so as to a greater extent
  • the insulating layer may be formed by depositing an insulating material and / or by a surface treatment of the conductive material of the cover plate.
  • the electrically conductive glass solder paste is introduced by printing process in screen or stencil printing in the contact hole, while in other variants, the electrically conductive glass solder paste by dosing is introduced into the contact hole. In this way, established methods and systems are available for carrying out these methods, so that hardly incur additional investment costs.
  • two or more vias are made and provided for electrical contacting and hermetic sealing for the microelectromechanical structure.
  • the interconnect structure Vias within the area of the chip area, which is occupied by the actual MEM structure, are arranged, the interconnect structure then provides the necessary connection configuration to the periphery.
  • the method further comprises: providing a
  • connection to a housing or a printed circuit board by bonding a connecting wire to the terminal contact or by directly connecting the terminal with a connection surface of the housing or the circuit board can be done.
  • the microsystem comprises a microelectromechanical structure MEMS) with a structured metallization layer which is laterally enclosed by a connection point and a bonded cover disk, which is connected to the connection point and has a metallic interconnect structure on an upper side.
  • the microsystem further includes a via extending from a via region of the metal interconnect structure to a contact pad of the patterned metallization layer through the bonded cover sheet and a fused electrically conductive solder glass for establishing electrical contact between the metal interconnect structure and the patterned metallization layer and for hermetic sealing of the O
  • microelectromechanical structure is filled.
  • the microsystem according to the invention thus has electrical feedthroughs which are simultaneously hermetically sealed and made of a readily available and efficiently processable material.
  • the cover plate consists of an insulating material
  • the cover plate has a conductive material and an insulating layer at least on an upper side and the lower side and on side walls of the through-hole, wherein the metallic interconnect structure on the
  • Insulating layer of the top is formed.
  • hole size and shape of the through-hole in the context of existing technological manufacturing processes for the through hole, in particular for drilling glass sheets or KOH etching of silicon wafers, designed arbitrarily, that is, adapted within the technical possibilities of the component requirements.
  • any desired shape and size for the contact hole that are considered advantageous for the component in question may be selected.
  • Microsystem multiple through holes to provide multiple vias per chip available, so that all or at least a majority of the electrical connections are efficiently led out of the MEM structure.
  • the complete microsystem in the form of a chip is covered by the sawn cover disk and all connections are on the top side of the sawn cover disk, preferably directly above the microelectromechanical structure, and the plated-through holes can be fixed by means of the metallic interconnect structure on the Reverse the top of the sawed cover plate so that a connection in enclosures or on printed circuit boards with standard processes of assembly and connection technology is possible.
  • FIG. 1 shows the longitudinal section of an example of the invention M EMS chip in schematic
  • FIG. 2 shows the longitudinal section of an example of the M EMS chip according to the invention in a schematic representation with a conductive cover disk.
  • FIG. 1 shows a microsystem 100, which is also provided in the form of a chip in the illustrated embodiment when the microsystem 100 is in a production phase after singulation, while several systems
  • the microsystem 100 comprises a system disk 1 on which a microelectromechanical structure 2 with freely movable structural components 2 a to be protected is formed, which in FIG.
  • Cover disc 5 is covered, wherein after the separation of the disk stack to chips, the isolated system disk 1 and the scattered cover disk will have the same outer dimensions.
  • the cover plate 5 has an upper side 5o and a lower side 5u, which is connected to the system disk 1.
  • the system disk 1 and the cover disk 5, i.e., the underside 5u thereof, are mechanically fixed and hermetically sealed to each other via a joint 4 laterally surrounding the structure 2.
  • the joint 4 may have a compensating interlayer, e.g. Glass solder, organic adhesive, or a direct connection, such as a molecular or anodic bond.
  • a compensating interlayer e.g. Glass solder, organic adhesive, or a direct connection, such as a molecular or anodic bond.
  • a region 5b of the top side 5a of the cover plate 5 is a through-connection point for the through-hole 6 and establishes a contact in the interconnect structure 5 to form one or more interconnects, which in turn are connected to correspondingly formed connection elements 9a, which are contacted by peripheral components, such as housings , Circuit boards and the like allow.
  • connection element 9a may be designed for contacting with a connecting wire 9, which can be pulled to form a surrounding housing.
  • a direct soldering or connection of the connection element 9a of the capped chip on printed circuit boards is possible (flip chip
  • the hole 6 is to be filled with an electrically conductive glass solder paste 8 which, after being fused, forms a conductive low-resistance path between forms two metal structures 3, 7 and simultaneously closes the hole hermetically sealed. For this it is not absolutely necessary that the hole 6 is completely filled with conductive glass solder. It must be ensured only the contact over a part of the shell side surface and the sealing at the bottom of the hole. Thus, to the hole shape and
  • holes with vertical and inclined side walls, side walls with greater or less 90 °, fill, with a conical hole with a smaller opening at the junction 4 technologically represents a cheap solution, since it can be filled very well and the side wall angle in the openings favorable for the wetting with the glass solder and thus for the contact.
  • the hole 6 or the plurality of holes can be both round and rectangular or have a different shape, which are compatible with the technological possibilities of the respective methods for producing the hole.
  • FIG. 2 shows an analogous arrangement of the microsystem 100 in which a cover or cover disk 5a is conductive, for example made of a semiconductor material, for example silicon. It is necessary that all electrically conductive structures of the interconnect structure 7 different potential on the cover plate 5a are insulated from each other.
  • the conductive cover 5a is to be covered on both sides with an insulating layer 10, which also lines the hole 6, the insulating layer 10 is also formed on side walls 6a of the hole 6.
  • this insulating layer 10 may be treated with standard semiconductor processes, such as thermal oxidation, silicon oxide or nitride CVD (Chemical Vapor deposition), surface treatments such as nitriding. After the application of this insulating layer, the electrically conductive cover plates 5a behave with respect to the via exactly like the insulating cover plates 5 described above.
  • the fabrication of the microsystem 100 includes the following steps. After the production of the M EM structure 2 with the components 2a, the metallization layer 3 and the connection point 4 on the basis of established processes, the cover plate 5, 5a is prepared. In one embodiment, this is provided as an insulating material, which can then be further processed, ie, the interconnect structure 7 is made and the cover plate 5 is connected to the system disk 1 by a joining process, if the through holes in the form of through holes 6 on the basis a disc association to be produced. In other cases, the cover plate 5 is processed separately from the disc 1, to first make the through hole 6 in the region 5b of the upper side 5o by drilling, etching, etc, wherein previously the interconnect structure 7 is formed. Thereafter, the filling of the conductive glass solder paste 8, which can be done by printing process in screen or stencil printing or by dosing. In other embodiments, the filling of the hole 6 is performed after connecting the bottom 5u to the joint 4 when the process conditions during the
  • Joining process are not compatible with the material properties of the paste 8.
  • the paste 8 is filled before the joining process, in a variant it is subjected to a heat treatment for melting the paste, this type of heat treatment being also referred to below as a first type of heat treatment.
  • a heat treatment for drying the paste 8 is first carried out, which is also referred to as a second type of heat treatment, wherein lower temperatures than in the heat treatment of the first type are used to drive out volatile components and a higher thermal and To achieve mechanical stability of the paste for further processing, but without causing a melting process.
  • the melting can be carried out after the joining process, if the process temperatures involved are below the melting temperature.
  • a first melting process is already carried out before the joining process and after the Joining a further melting process is performed, so that after the first melting process, a high thermal and mechanical strength of the paste 8 results, but after the connection, the electrical contact is reliably carried out with a further heat treatment of the first kind, with an improvement of the tightness can be achieved can.
  • the heat treatment of the first type is performed during the joining process, resulting in a very efficient process flow.
  • the process parameters are adjusted in the joining process so that the paste 8 is brought to or above the melting temperature for the required period of time.
  • the interconnect structure 7 can be connected via the connecting elements 9a by bonding, flip-chip contacting, and the like to the periphery, that is to say with a housing, a printed circuit board or another carrier.
  • Insulating layer 10 is applied to the side walls 6a.
  • the insulating layer on the upper side 5o, the lower side 5u and the side walls can be applied in a common process, followed by the production of the interconnect structure 7.
  • the insulating layer 10 can first be produced on the upper side 5o and the lower side 5u, followed by the production of the interconnect structure 7. After structuring the holes 6, their side walls 6a may then be provided with the insulating layer 10, e.g. Passivation of the interconnect structure 7 is desired. After the production of the insulating layer can then further
  • the fabrication process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5 made of insulating material for the purpose of fabricating a microelectromechanical system 100, with vertically extending through holes 6 in the cover disk 5 are introduced to the hermetically sealed microelectromechanical structure 2 by the Through holes 6 to connect by means of a conductive connection to the metallic interconnect structure 7 on the upper side 5o of the cover plate 5, wherein first the metallic interconnect structure 7 is formed on the upper side 5o of the cover plate 5, wherein in the metallic interconnect structure 7 areas 5b is kept free of metal, the to the contact points 3a on the structured
  • Metallization layer 3 of the system disk 1, where later the electrical contact is made, are assigned, and then the through holes 6 are introduced at these areas and then the system disk 1 and the cover plate 5 are joined and then introduced into the through holes 6 electrically conductive glass solder paste 8 and at the conclusion of the microelectromechanical structure 2, the glass paste is melted, wherein the sealing takes place and the electrical contact between the structured metallization layer 3 and the metallic interconnect structure 7 is produced.
  • the fabrication process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5 made of insulating material for the purpose of fabricating a microelectromechanical system 100, with vertically extending through holes 6 in the cover disk 5 are introduced to the hermetically sealed microelectromechanical structure 2 by the
  • Metallization layer 3 of the system disk 1, where the electrical contact is made later, are assigned, and then the through holes 6 are introduced at these areas and then introduced into the through holes 6 electrically conductive glass solder paste 8 and melted, whereby the holes 6 are sealed Subsequently, the system disk 1 and the cover plate 5 are joined together, wherein the completion of the microelectromechanical structure 2 takes place and the electrical contact between the patterned metallization layer 3 and the metallic interconnect structure 7 is produced.
  • the manufacturing process corresponds to a method for hermetically sealing the microelectromechanical structure 2, which is located on the system disk 1, with covering disk 5 made of insulating material for the purpose of producing a microelectromechanical system 100, are introduced in the vertically extending through holes 6 in the cover plate 5 to connect the hermetically sealed microelectromechanical structure 2 through the through holes 6 by means of a conductive connection to the metallic interconnect structure 7 on the upper side 5o of the cover plate 5, wherein first the metallic interconnect structure 7 on the upper side 5o of the cover plate 5 is formed, wherein in the metallic interconnect structure 7 areas 5b is kept free of metal, which are assigned to the contact points 3a on the patterned metallization layer 3 of the system disk 1, at which later the electrical contact is made and then the through holes 6 are introduced at these areas and then introduced into the through holes 6 electrically conductive glass solder paste 8 and dried, then the system disk 1 and the cover plate 5 are joined together and the pre-dried glass solder alsm with the completion
  • the fabrication process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5 made of insulating material for the purpose of fabricating a microelectromechanical system 100 having vertically extending through holes 6 in FIG the cover plate 5 are introduced to connect the hermetically sealed microelectromechanical structure 2 through the through holes 6 by means of a conductive connection to the metallic interconnect structure 7 on the upper side 5o of the cover plate 5, wherein first the metallic
  • Conductor structure 7 is formed on the upper side 5o of the cover plate 5, wherein in the metallic interconnect structure 7 areas 5b is kept free of metal, which are assigned to the contact points 3a on the patterned metallization layer 3 of the system disk 1, where later the electrical contact is made and thereafter, the through-holes 6 are inserted at these portions, and then electrically soldered glass paste 8 is introduced into the through-holes 6, dried and pre-melted, then the system disk 1 and the cover disk 5 are joined together and the pre-molten solder glass is melted a second time, the Completion of the microelectromechanical structure 2 takes place and the electrical contact between the structured
  • the manufacturing process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5a made of electrically conductive material for the purpose of fabricating a microelectromechanical system 100 in which vertically extending through holes 6 are inserted into the Cover plate 5a are introduced to connect the hermetically sealed microelectromechanical structure 2 through the through holes 6 by means of a conductive connection to the metallic interconnect structure 7 on the upper side 5o of the cover plate 5a, wherein first the through holes 6 are introduced into the cover plate at areas 5b, the to the contact points 3a on the patterned metallization layer
  • the manufacturing process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5a made of electrically conductive material for the purpose of fabricating a microelectromechanical system
  • the manufacturing process corresponds to one
  • the manufacturing process corresponds to a method of hermetically sealing the microelectromechanical structure 2 located on the system disk 1 with cover sheet 5a made of electrically conductive material for the purpose of fabricating a microelectromechanical system 100 with vertically extending through holes 6 be introduced into the cover plate 5a to connect the hermetically sealed microelectromechanical structure 2 through the through holes 6 by means of a conductive connection to the metallic interconnect structure 7 on the upper side 5o of the cover plate 5a, wherein first the through holes 6 are introduced into the cover plate at areas 5b which are associated with the contact points 3a on the patterned metallization layer 3 of the system disk 1, at which the electrical contact is made later, then the cover disk 5a is oxidized and then a metallic interconnect structure 7 is formed on the upper side 5o of the cover plate 5a, wherein in the metallic interconnect structure 7, the holes 6 are kept free of metal and then introduced into the through holes 6 electrically conductive glass solder paste 8, dried and pre-melted, then the System disk 1 and
  • a further embodiment relates to an arrangement of a microelectromechanical structure (MEMS) in which a microelectromechanical structure 2 is covered by a bonded cover disk 5 consisting of an insulating material which has through holes 6 which extend into the space in which the micromechanical structure 2 are filled with a fused, electrically conductive glass solder 8, whereby on the one hand electrical contacts between the structured metallization 3 of the microelectromechanical structure 2 on the system disk 1 and a metallic interconnect structure 7 for bonding contacts on the surface 5o of the cover plate 5 are made and on the other hand microelectromechanical structure 2 is hermetically sealed.
  • MEMS microelectromechanical structure
  • a further embodiment relates to an arrangement of a microelectromechanical structure (MEMS) in which a microelectromechanical structure 2 is covered by a bonded cover plate 5a made of conductive material coated with an insulation layer 10 and insulated by the insulation layer 10
  • MEMS microelectromechanical structure
  • System disk 2 to be covered microelectromechanical structure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne des procédés et des microsystèmes permettant une métallisation des trous verticale (6) sur des plaques de recouvrement (5) pour des composants de microsystème (2, 2a) au moyen d'un verre de scellement conducteur (8). Les procédés et microsystèmes selon cette invention permettent de simplifier la métallisation des trous (6), de réduire le taux d'erreurs et d'améliorer la fiabilité.
PCT/EP2007/058788 2006-08-26 2007-08-23 Procédé de scellement hermétique et de mise en contact électrique d'une structure micro-électromécanique et microsystème ainsi produit (mems) WO2008025725A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112007001698T DE112007001698A5 (de) 2006-08-26 2007-08-23 Hermetisch dichtes Verschliessen und elektrisches Kontaktieren einer mikroelektro-mechanischen Struktur und damit hergestelltes Mikrosystem (MEMS)
US12/438,824 US8021906B2 (en) 2006-08-26 2007-08-23 Hermetic sealing and electrical contacting of a microelectromechanical structure, and microsystem (MEMS) produced therewith

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006040115.8 2006-08-26
DE102006040115A DE102006040115A1 (de) 2006-08-26 2006-08-26 Verfahren und Anordnung zur hermetisch dichten vertikalen elektrischen Durchkontaktierung von Deckscheiben der Mikrosystemtechnik

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WO2008025725A1 true WO2008025725A1 (fr) 2008-03-06

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PCT/EP2007/058788 WO2008025725A1 (fr) 2006-08-26 2007-08-23 Procédé de scellement hermétique et de mise en contact électrique d'une structure micro-électromécanique et microsystème ainsi produit (mems)

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US (1) US8021906B2 (fr)
DE (2) DE102006040115A1 (fr)
WO (1) WO2008025725A1 (fr)

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JP5249080B2 (ja) * 2009-02-19 2013-07-31 セイコーインスツル株式会社 半導体装置
TWI395312B (zh) * 2010-01-20 2013-05-01 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
WO2011100068A2 (fr) * 2010-02-12 2011-08-18 Eigenlight Corporation Boîtier hermétique doté de connexions d'interface plombées pour dispositifs à fibre optique en ligne et son procédé de fabrication
EP2402284A1 (fr) * 2010-06-29 2012-01-04 Nxp B.V. Procédé de fabrication MEMS
CH704884B1 (fr) 2011-04-29 2015-04-30 Suisse Electronique Microtech Substrat destiné à recevoir des contacts électriques.
JP6331551B2 (ja) * 2014-03-25 2018-05-30 セイコーエプソン株式会社 Ｍｅｍｓデバイス
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FR3042642B1 (fr) * 2015-10-15 2022-11-25 Commissariat Energie Atomique Procede de realisation d'un dispositif comprenant une micro-batterie
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US8021906B2 (en) 2011-09-20
DE102006040115A1 (de) 2008-03-20

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