Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
  • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/26—Deposition of carbon only
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges

Definitions

• the present invention relates to a film forming apparatus for forming a carbon film for field electron emission on a surface of a substrate using direct current plasma.
• a carbon film having minute tip edges such as carbon nanotubes, carbon nanowalls, etc., is formed on a substrate surface, and an electric field is concentrated on many tip edges of the carbon film to cause field electron emission.
• Technology has already been proposed.
• a carbon film is formed on the surface of a wire to form a carbon film attached wire, and this carbon film attached wire is disposed opposite to the anode as a cathode (cold cathode electron source).
• a vacuum device that applies a voltage between them to cause wire surface force electric field emission. Examples of the vacuum device include various types such as a field emission lamp, a micromachine device, an electron microscope, and an infrared sensor.
• a cathode wire is desired to be reduced in manufacturing cost with high productivity.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2005-307352
• a carbon film can be efficiently formed on the surface of a substrate or the like, the mass productivity of the carbon film-coated substrate is improved, and the mass productivity of a vacuum device using this carbon film-coated substrate is improved.
• a film forming apparatus capable of reducing mass production costs. Means to solve the problem
• an electrode is disposed in a vacuum chamber, a film forming gas is introduced into the vacuum chamber, and a voltage is applied to the electrode to convert the film forming gas into a plasma to form a substrate.
• a cylindrical electrode as the electrode having a supply port and a discharge port of a substrate, and a plurality of substrates are supplied to the inside of the cylindrical electrode through the supply port of the cylindrical electrode.
• a substrate supply and discharge device for discharging the cylindrical electrode and discharging the substrate; is there.
• the cylindrical electrode is not limited to a single cylindrical electrode, but includes a pair of semi-cylindrical electrodes.
• the shape of the cylindrical electrode does not matter whether it is long or short in the axial direction of the cylinder.
• the cross-sectional shape of the cylindrical electrode is preferably circular, but may include oval, rectangular or the like.
• the openings include openings on both ends of a single cylindrical electrode, an opening provided on the side surface of the single cylindrical electrode, a facing gap between two pairs of semi-cylindrical electrodes, and the like.
• the film forming gas is not particularly limited as long as it can form a carbon film on the substrate surface.
• a plurality of substrates can be sequentially supplied to the inside of the cylindrical electrode through the opening of the cylindrical electrode and can be sequentially discharged from the opening of the cylindrical electrode by the substrate supply and discharge device. Since a plurality of substrates can be sequentially subjected to film forming processing inside a cylindrical electrode to manufacture a substrate with a carbon film, mass productivity of the substrate with a carbon film is greatly improved. It is possible to reduce the mass productivity and mass production cost of vacuum devices using a carbon film-coated substrate.
• the supply port and the discharge port of the cylindrical electrode be end openings in the longitudinal direction of the cylindrical electrode.
• the supply port and the discharge port of the cylindrical electrode be openings formed on both side surfaces of the cylindrical electrode, respectively.
• a plurality of the cylindrical electrodes are connected in series, and the supply port and the discharge port of each of the plurality of cylindrical electrodes are in communication in a line in the substrate transport direction. Yes.
• the cylindrical electrode also has a pair of semi-cylindrical electrode forces in which both circumferential end portions face each other with a predetermined gap therebetween, and in the pair of semi-cylindrical electrodes, It is preferable that the facing gap on one end side in the circumferential direction is the supply port, and the facing gap on the other end side in the circumferential direction is the discharge port.
• the two pairs of semi-cylindrical electrodes are connected in a plurality and connected in series. It is preferable that the facing gaps of each of the pairs of semi-cylindrical electrodes communicate in a line in the substrate transfer direction.
• the facing gap between the two pairs of semi-cylindrical electrodes be closed at the time of film formation and be open at the time of transportation.
• an electrode is disposed in a vacuum chamber, a film forming gas is introduced into the vacuum chamber, and a voltage is applied to the electrode to plasmify the film forming gas.
• a cylindrical electrode as the electrode having an opening at least one end side, and a plurality of substrates are used as a supply port and a discharge port of the substrate, and the supply port and the discharge port.
• a substrate supply and discharge device capable of supplying and discharging to and from the inside of the cylindrical electrode through an outlet.
• the substrate supply and discharge apparatus includes a substrate supply apparatus that supplies a substrate toward the supply port of the cylindrical electrode, and a substrate storage apparatus that stores the substrate discharged from the discharge port of the cylindrical electrode. It is preferable to provide a substrate transfer apparatus for transferring a substrate on a substrate transfer path between a supply port and a discharge port inside the cylindrical electrode.
• the substrate supply device and the substrate storage device be detachable from the vacuum chamber.
• the substrate is preferably a wire.
• the mass productivity of a substrate with a carbon film can be improved, and the mass productivity of a vacuum device using this substrate with a carbon film can be improved and the mass production cost can be reduced.
• FIG. 1 is a view showing a schematic configuration of a film forming apparatus according to a first embodiment of the present invention.
• FIG. 2 is a cross-sectional view taken along the line A-A of FIG.
• FIG. 3 is a view showing a schematic configuration of a film forming apparatus during conveyance of a wire.
• FIG. 4 is a perspective view of a wire supply device, a plasma generating electrode and a wire storage device in a film forming apparatus.
• FIG. 5 is a diagram for explaining the dimensional relationship between a plasma generating electrode and a wire.
• 6 is a cross-sectional view of the plasma generating electrode 18 shown in FIG. 4 as viewed from the side.
• FIG. 7A is a plan view of a plasma generating electrode at the time of wire conveyance in the film forming apparatus in accordance with Embodiment 2 of the present invention.
• FIG. 7B is a plan view of a plasma generating electrode at the time of wire film formation.
• FIG. 8A is a perspective view at the time of setting a wire into a cylindrical electrode in Embodiment 3 of the present invention.
• FIG. 8B is a perspective view at the time of discharge.
• FIG. 9 is a view showing a schematic configuration of a film forming apparatus in accordance with Embodiment 4 of the present invention.
• FIG. 10 is a cross-sectional view of a field emission lamp using a wire on which a carbon film is formed by a film forming apparatus.
• a substrate to be a film forming target is applied to a wire.
• the film forming apparatus 2 is a wire (an example of a substrate by direct current plasma CVD).
• the film forming apparatus 2 includes a vacuum tank 4, a gas cylinder 6, a gas pressure Z flow control circuit 8, an exhaust control valve (vacuum valve) 10, an evacuation system 12, a DC power supply 14, 28 and a control device 16.
• the gas cylinder 6 is a mixed gas (CH 4 / H 2) of hydrogen gas and hydrocarbon gas! /, And the mixed gas (CH 4 ZH 2 ZN 2) of hydrogen gas, nitrogen and hydrocarbon gas is stored.
• the regulating circuit 8 regulates the pressure and flow rate of the gas from the gas cylinder 6.
• the evacuation system 12 evacuates the inside of the vacuum chamber 2 via the evacuation control valve 10.
• the vacuum chamber 2 is grounded. Inside the vacuum chamber 2, the plasma generating electrode 18, and the wire feeder supplies flop plasma generating electrode 18 to the wire 20 (substrate supply unit) 22, a carbon film is deposited by this plasma generating electrode 18 And a wire storage device (substrate storage device) 24 for winding and storing the wire 20.
• the wire feeding device 22 includes a case 22a and a rotating and self-adjusting wire brazing shaft 22b erected at the bottom of the case 22a.
• a wire 20 suspended at its upper end side at a constant interval around the transport belt 26 is wound around the wire crimping shaft 22b of the wire feeding device 22.
• the lower end side of the wire 20 is also supported by another transport belt.
• the lower end side of the wire 20 may be supported by a monorail-type transportation track installed in the air.
• the wire 20 is connected to the negative electrode of the DC power supply 28 through the transport belt 26.
• the positive electrode of the DC power supply 28 is grounded.
• the plurality of wires 20 are suspended in the vertical direction (the direction perpendicular to the paper surface of FIG. 1, the vertical direction of the paper surface of FIG. 2) by fixing the upper end side by the transport belt 26 and aligned at constant intervals. There is.
• the hanging direction of the wire 20 is referred to as the vertical direction for convenience of explanation.
• the wire storage device 24 includes a case 24 a and a rotatable wire take-up shaft 24 b erected at the bottom of the case 24 a. On the upper side of the wire storage device 24 is mounted a motor 25 for rotationally driving the wire pick-up shaft 24b.
• a guide roller 32 for guiding the wire 20 supplied from the wire supply device 22 to the plasma generating electrode 18 and a wire 20 discharged from the plasma generating electrode 18 are stored in the wire.
• a guide roller 34 for guiding the device 24 is disposed.
• the wire feeding device 22, the wire storage device 24, and the plasma generating electrode 18 are disposed on an insulating sheet 17 laid at the bottom of the vacuum chamber 4.
• the plasma generating electrode 18 is connected to the negative electrode of the DC power supply 14.
• the positive electrode of the DC power supply 14 is grounded.
• the plasma generating electrode 18 comprises a wire supply device 22 and a wire housing It is located between The plasma generating electrode 18 may be disposed in line with the wire feeding device 22 and the wire storage device 24 so that the guide rollers 32 and 34 can be omitted.
• the plasma generating electrode 18 is formed by dividing a plurality of cylindrical electrodes continuously arranged in a row on the bottom of the vacuum chamber 4 in the longitudinal direction (the penetrating direction in FIG. 1; the vertical direction in FIG. 2). And two pairs of semi-cylindrical electrodes 18al, 18bl; 18a2, 18b2; 18a3; 18b3; 18a4, 18b4 (sometimes referred to as semi-cylindrical electrodes 18a, 18b for convenience of explanation) .
• the semi-cylindrical electrodes 18a and 18b are arranged in a line in the wire transport direction.
• the semi-cylindrical electrode 18a on one side and the semi-cylindrical electrode 18b on the other side are configured to be opposed substantially in parallel with a predetermined gap wO.
• the opposing gap wO is in the form of a rectangle which is elongated in the longitudinal direction and narrow in the opposing direction.
• a wire transfer passage 30 inside the plasma generating electrode 18 is formed in the facing gap wO of the two semi-cylindrical electrodes 18a and 18b.
• the facing gap wO near the wire supply device 22 is a wire feeding port
• the facing gap wO near the wire storage device 24 constitutes a wire discharge port
• FIG. 3 shows a plasma generating electrode 18 and a wire 20.
• the opposing gap wO of each of the semi-cylindrical electrodes 18 a and 18 b constituting the plasma generating electrode 18 is larger than the diameter ⁇ 1 of the wire 20.
• the length RO of the wire transport passage 30 inside the plasma generating electrode 18 can be set appropriately according to the film forming conditions of the carbon film on the surface of the wire 20.
• the electrode height H 0 of the plasma generating electrode 18 may be long or short with respect to the length L 1 of the wire 20.
• the wire 20 passes from the wire feeding device 22 via the guide roller 32 to the facing gap wO on the feed port side of the plasma generating electrode 18. It is carried into the plasma generating electrode 18. Further, the wire 20 formed into a film inside the plasma generating electrode 18 is discharged from the facing gap wO of the discharge port side of the plasma generating electrode 18. The wire 20 discharged from the plasma generating electrode 18 is taken up and stored by the wire storage device 24 through the guide roller 34.
• the control device 16 controls the gas cylinder 6 inside the vacuum chamber 4, the control circuit 8, the exhaust control valve 10, the vacuum exhaust system 12, the power supplies 14, 28, and the transport motor 24 c.
• the control device 6 is configured by a microcomputer, stores control data and control programs necessary for the control in a storage device, and can be automatically controlled by the CPU.
• the control device 6 may be a device for manually controlling the film forming apparatus by referring to a control list etc. by the operator.
• the wire 20 is wound around the wire bonding shaft 22b of the wire supply device 22.
• the wire feeding device 22 can be set in the vacuum chamber 4 with the wire 20 wound around the wire winding shaft 24b.
• the wire 20 In the set state, when the wire take-up shaft 24b is rotationally driven by driving the motor 25 on the wire supply device 22 side, the wire 20 also generates a plasma via the guide roller 32 on the wire supply device 22 side. It is supplied into the plasma generating electrode 18 from the facing gap wO which is a wire supply port of the electrode 18. Furthermore, the wire 20 is conveyed to the wire conveyance passage 30 inside, and the opposing gap wO force which is the wire discharge port of the plasma generating electrode 18 is also discharged, and finally the wire pick-up of the wire storage device 24 via the guide roller 34 It is wound around the shaft 24b.
• the internal pressure of the vacuum chamber 2 is reduced to a vacuum state by the evacuation system 12 by opening the evacuation control valve 10.
• the opening degree of the exhaust control valve 10 is reduced to reduce the exhaust speed in the vacuum chamber 2, and the gas for carbon film deposition is introduced from the gas cylinder 6 to the vacuum chamber 2 under the control of the control circuit 8.
• Adjust to the pressure of Thereafter when a direct current power source 14 is applied to the plasma generating electrode 18, a direct current plasma by hydrogen gas is generated inside the plasma generating electrode 18 at a high density as shown by a broken line 32 in FIG. .
• a carbon film is formed on the surface of the wire 20 passing through the wire transfer passage 30 in the plasma generating electrode 18.
• the wire 20 since the wire 20 is connected to the negative electrode of the DC power supply 28, the deposition rate of the carbon film on the surface of the wire 20 is increased.
• FIG. 6 shows a cross-sectional view of the plasma generating electrode 18 shown in FIG. 4 as viewed from the side.
• the wire 20 when the wire 20 also carries the opposing gap wO force into the inside of the plasma generating electrode 18, the loading side forces also become semi-cylindrical electrodes 18al, 18bl; 18a2, 18b2; 18a3; 18b3; 18a4, 18b4
• a carbon film 2 Oa is formed on the surface of the wire 20 under the control of gas pressure, gas flow rate, film formation time, etc. by plasmas 32a, 32b, 32c, 32d generated inside respectively.
• the carbon film can be formed on the surface of the wire 20 conveyed one after another by the plasma 32 generated inside the plasma generating electrode 18, the carbon film is attached.
• the mass productivity of the wire 20 is improved.
• FIGS. 7A and 7B A film forming apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 7A and 7B.
• the plural pairs of semi-cylindrical electrodes 18a, 18b that constitute the plasma generating electrode 18 have their opposing gaps wO as shown in FIG.
• the opposing gap wO may be filled to enable plasma to be generated more efficiently.
• the facing gap wO on the side closer to the wire feeding device 22 is a wire feeding port
• the facing gap wO on the side closer to the wire storage device 24 is a wire outlet.
• a film forming apparatus according to a third embodiment of the present invention will be described with reference to FIGS. 8A and 8B.
• the wire 20 when the wire 20 is set at a predetermined position, the wire 20 is also carried in the one end side opening portion force of the plasma generating electrode 18 as shown in FIGS. 8A to 8B. After the film forming process is completed, the wire 20 is discharged out of the plasma generating electrode 18 as shown in FIG. 8B to FIG. 8A.
• the one side opening of the plasma generating electrode 18 serves as the wire supply port and the wire discharge port.
• the force wire 20 not shown is supplied to the inside of the plasma generating electrode 18 with the one end side opening as the wire supply port at the both end openings of the plasma generating electrode 18 and the other end side opening
• the wire 20 may be discharged to the outside of the plasma generating electrode 18 by using the
• a film forming apparatus will be described with reference to FIG. Constitution of Embodiment 4
• the wire supply device 22 and the wire storage device 24 can be detachably attached to the opening provided in the vacuum tank 4 in the directions of arrows a and b.
• the wire supply device 22 and the wire storage device 24 can be easily set in the vacuum chamber 4, and the efficiency of the film forming operation can be improved. Device mass productivity can be improved.
• a carbon film is formed on the surface of the conductive wire by using the film forming apparatus of the above embodiment, and a field mission lamp using the wire on which the carbon film is formed as a cold cathode electron source is shown in FIG. Show.
• a field transmission lamp 40 an anode 46 with a fluorescent body 44 is formed on the inner surface of a longitudinally extending glass lamp tube 42, and a cathode 48 extending like a beam in the center of the lamp tube 42 is mounted on the air.
• the wire cathode 48 is formed by depositing the carbon film 52 on the surface of a wire 50 which is a conductor.
• the film forming apparatus uses, as a cold cathode electron source, one having a carbon film for field electron emission formed on the surface of the wire, and when mass producing a cathode wire for a field emission type vacuum device, It is particularly useful as an apparatus for forming a carbon film on the surface of a wire.

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• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
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• Chemical Vapour Deposition (AREA)

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Citations (5)

• 2006
  • 2006-08-08 WO PCT/JP2006/315648 patent/WO2008018119A1/ja active Application Filing
  • 2006-08-08 JP JP2008528671A patent/JP5068264B2/ja not_active Expired - Fee Related
  • 2006-08-08 CN CN200680055565A patent/CN101528977A/zh active Pending
  • 2006-12-29 TW TW095150113A patent/TWI390071B/zh active

Patent Citations (5)

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