WO2008009165A1 - PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON - Google Patents

PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON Download PDF

Info

Publication number
WO2008009165A1
WO2008009165A1 PCT/CN2006/001542 CN2006001542W WO2008009165A1 WO 2008009165 A1 WO2008009165 A1 WO 2008009165A1 CN 2006001542 W CN2006001542 W CN 2006001542W WO 2008009165 A1 WO2008009165 A1 WO 2008009165A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma treatment
degree
silicon oxynitride
oxynitride film
sion film
Prior art date
Application number
PCT/CN2006/001542
Other languages
English (en)
Chinese (zh)
Inventor
Hou Chen
Meng-Shiu Tsai
Baresi Yang
Original Assignee
He Jian Technology(Suzhou)Co.Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by He Jian Technology(Suzhou)Co.Ltd. filed Critical He Jian Technology(Suzhou)Co.Ltd.
Priority to CNA2006800551510A priority Critical patent/CN101473211A/zh
Priority to PCT/CN2006/001542 priority patent/WO2008009165A1/fr
Publication of WO2008009165A1 publication Critical patent/WO2008009165A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method

Definitions

  • the present invention relates to a semiconductor manufacturing process, and more particularly to an optical detecting method for plasma processing degree of a silicon oxynitride film.
  • Plasma etching processes are widely used in the production of semiconductor devices and liquid crystal displays (hereinafter referred to as LCDs).
  • the processing apparatus for the plasma treatment for example, is provided with an upper electrode and a lower electrode which are arranged in parallel with each other.
  • a processing workpiece e.g., a semiconductor wafer
  • a plasma is generated between the upper electrode and the lower electrode.
  • the workpiece is subjected to etching of a specific pattern by the plasma.
  • the present invention has been made to solve the above problems, and an object thereof is to provide a non-destructive and simple optical detection method for the degree of plasma treatment of a silicon oxynitride film.
  • the method for optically detecting the degree of plasma treatment of the silicon oxynitride (hereinafter referred to as SION) film of the present invention comprises first using a chemical vapor deposition (hereinafter referred to as CVD) method for a semiconductor wafer having a size of, for example, 100 to 300 mm, for example.
  • CVD chemical vapor deposition
  • the SION film is deposited on the silicon, silicon germanium and arsenic bismuth wafers.
  • the required reaction gases are, for example, silane Si and nitrous oxide N 2 0.
  • the SION film formed by using a spectrometer has a refractive index between 1.5 and 2.2, and the reflectance measured by an ellipsometer is between 0.2 and 0.01, and then plasma is applied thereto.
  • the plasma-treated SION film is detected by an optical detection method, and the degree of plasma treatment is judged based on the change in the refractive index or reflectance of the silicon oxynitride film.
  • the optical detection method for the degree of plasma treatment of the SION film can measure the refractive index of the SION film after the plasma treatment by a spectrometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the refractive index in the above-described range.
  • the optical detection method for the degree of plasma treatment of the SION film can also measure the reflectance of the SION film after the plasma treatment by an ellipsometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the reflectance in the above-mentioned range.
  • the degree of plasma treatment of the SION film can be optically measured using a spectrometer, an ellipsometer or the like in a semiconductor manufacturing process.
  • the wavelength of the SION film after plasma treatment can be any wavelength range between 150 and 850 nm or specific. wavelength.
  • FIG. 1 is a process diagram of depositing a SION film by a CVD method and plasma treatment of a SION film at different times according to a preferred embodiment of the present invention.
  • Fig. 2 is a graph showing refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) according to a preferred embodiment of the present invention.
  • FIG. 3 is a graph showing reflectance measurement of a SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention.
  • ellipsometer wavelength 248 nm
  • Figure 1 is a process diagram for depositing a SION film by a CVD method and plasma treatment of a SION film at different times in accordance with a preferred embodiment of the present invention.
  • a SION film is first deposited on a silicon wafer by a CVD method.
  • the reaction gas used is Si, N 2 0, and the auxiliary gas may be N 2 , Ar, He.
  • the deposited SION film is then subjected to plasma treatment at different times.
  • FIG. 2 there is shown a graph of refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) in accordance with a preferred embodiment of the present invention.
  • the refractive index measurement of the SION film after the time treatment by the spectrometer shows: The rate is approximately 1.9915.
  • the refractive index measurement of the SION film after the time treatment of the spectrometer showed that the refractive index was about 1.9909.
  • the SION film deposited on the silicon wafer was subjected to plasma treatment for 33 seconds as shown in Fig. 2.
  • the refractive index measurement of the SION film after the time treatment by the spectrometer showed that the refractive index was about 1.9894.
  • FIG. 3 is a graph showing the reflectance measurement of the SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention.
  • the SION film after the time treatment is performed by using an ellipsometer. Reflectance measurements show a reflectivity of approximately 0.0645.
  • the SION film deposited on the silicon wafer is subjected to plasma treatment for 30 seconds, as shown in FIG. 3, when the reflectance of the processed SION film is measured by an ellipsometer, The results show that the reflectivity is approximately 0.0627.
  • the SION film deposited on the silicon wafer is subjected to plasma treatment for 33 seconds, as shown in FIG.
  • the reflectance measurement of the SION film after the time treatment is performed by using an ellipsometer.
  • the results show that the reflectivity is approximately 0.0624. It can be seen from the above results that the reflectivity of the SION film after plasma treatment is different at different times by the ellipsometer, and the reflectivity tends to decrease as the processing time increases.
  • the refractive index is between 1.5 and 2.2
  • the reflectance is between 0.2 and 0.01, and simultaneously found along with the plasma. As the processing time increases, both the refractive index and the reflectance tend to decrease.
  • the degree of change in refractive index and reflectance which occurs after plasma treatment at different times by the SION film can achieve the result of quantitative plasma treatment, so that the degree of plasma treatment of the SION film can be easily confirmed.

Abstract

L'invention concerne un procédé d'inspection optique d'un degré de traitement au plasma d'un film de SiON. Ledit procédé consiste: tout d'abord, à déposer le film de SiON sur une plaquette semi-conductrice au moyen d'un procédé de dépôt chimique en phase vapeur, puis à mettre en oeuvre le traitement au plasma sur le film de SiON, et enfin, à mettre en oeuvre l'inspection optique pour déterminer le degré de traitement au plasma du film de SiON à l'aide du procédé d'inspection optique. Le degré de traitement au plasma est évalué sur la base du changement de la réfringence ou de la réflectivité du film de SiON.
PCT/CN2006/001542 2006-07-03 2006-07-03 PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON WO2008009165A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2006800551510A CN101473211A (zh) 2006-07-03 2006-07-03 一种氮氧化硅薄膜的等离子处理程度的光学检测方法
PCT/CN2006/001542 WO2008009165A1 (fr) 2006-07-03 2006-07-03 PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2006/001542 WO2008009165A1 (fr) 2006-07-03 2006-07-03 PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON

Publications (1)

Publication Number Publication Date
WO2008009165A1 true WO2008009165A1 (fr) 2008-01-24

Family

ID=38956510

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/001542 WO2008009165A1 (fr) 2006-07-03 2006-07-03 PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON

Country Status (2)

Country Link
CN (1) CN101473211A (fr)
WO (1) WO2008009165A1 (fr)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198305A (ja) * 1989-01-27 1990-08-06 Ricoh Co Ltd 屈折率・膜厚測定に於ける入射角決定方法
WO1999054694A1 (fr) * 1998-04-23 1999-10-28 Sandia Corporation Procede et dispositif de surveillance des operations de traitement au plasma
US6090302A (en) * 1998-04-23 2000-07-18 Sandia Method and apparatus for monitoring plasma processing operations
CN1364233A (zh) * 1999-05-17 2002-08-14 佛罗里达国际大学董事会 具有高角度分辨率和快响应时间的表面等离子体共振检测
CN1377457A (zh) * 1999-09-30 2002-10-30 拉姆研究公司 使用脉动宽带光源原位监测等离子体刻蚀和淀积工艺的方法和装置
CN1380541A (zh) * 2001-04-10 2002-11-20 华邦电子股份有限公司 以光学方法测量温度并监控蚀刻率的方法
CN1405554A (zh) * 2002-10-30 2003-03-26 江苏大学 界面结合强度的远紫外激光划痕测量方法及装置
CN1549316A (zh) * 1992-08-27 2004-11-24 ��ʽ����뵼����Դ�о��� 半导体器件的制造方法
US20040258927A1 (en) * 2003-06-23 2004-12-23 Conzone Samuel D. Non-destructive quality control method for microarray substrate coatings via labeled doping
US20050068519A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method for monitoring status of system components
JP2005257651A (ja) * 2004-03-15 2005-09-22 Omron Corp プラズマ測定装置及びプラズマ測定方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198305A (ja) * 1989-01-27 1990-08-06 Ricoh Co Ltd 屈折率・膜厚測定に於ける入射角決定方法
CN1549316A (zh) * 1992-08-27 2004-11-24 ��ʽ����뵼����Դ�о��� 半导体器件的制造方法
WO1999054694A1 (fr) * 1998-04-23 1999-10-28 Sandia Corporation Procede et dispositif de surveillance des operations de traitement au plasma
US6090302A (en) * 1998-04-23 2000-07-18 Sandia Method and apparatus for monitoring plasma processing operations
CN1364233A (zh) * 1999-05-17 2002-08-14 佛罗里达国际大学董事会 具有高角度分辨率和快响应时间的表面等离子体共振检测
CN1377457A (zh) * 1999-09-30 2002-10-30 拉姆研究公司 使用脉动宽带光源原位监测等离子体刻蚀和淀积工艺的方法和装置
CN1380541A (zh) * 2001-04-10 2002-11-20 华邦电子股份有限公司 以光学方法测量温度并监控蚀刻率的方法
CN1405554A (zh) * 2002-10-30 2003-03-26 江苏大学 界面结合强度的远紫外激光划痕测量方法及装置
US20040258927A1 (en) * 2003-06-23 2004-12-23 Conzone Samuel D. Non-destructive quality control method for microarray substrate coatings via labeled doping
US20050068519A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Method for monitoring status of system components
JP2005257651A (ja) * 2004-03-15 2005-09-22 Omron Corp プラズマ測定装置及びプラズマ測定方法

Also Published As

Publication number Publication date
CN101473211A (zh) 2009-07-01

Similar Documents

Publication Publication Date Title
French et al. Optimization of a low-stress silicon nitride process for surface-micromachining applications
US7948631B2 (en) Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
KR100195562B1 (ko) 반도체 장치 표면의 불평탄도 검출 시스템
CN115132604B (zh) 硅化物工艺监测方法
US20130258330A1 (en) Evaluation substrate, defect examination method and defect detection device
Chudoba et al. Determination of mechanical film properties of a bilayer system due to elastic indentation measurements with a spherical indenter
JP3773355B2 (ja) 半導体装置の製造装置
WO2008009165A1 (fr) PROCÉDÉ D'INSPECTION OPTIQUE D'UN DEGRÉ DE TRAITEMENT AU PLASMA D'UN FILM DE SiON
TW577135B (en) Die size control for polysilicon film and the inspection method thereof
TW202307398A (zh) 實時量測薄膜厚度的裝置
Tang et al. Investigation of borophosphosilicate glass roughness and planarization with the atomic force microscope technique
JP3037922B2 (ja) シリコン含有層の評価方法及びシリサイド層の形成工程の管理方法
JP2001228026A (ja) 放射温度測定方法
CN101435104B (zh) 根据氮化硅薄膜应力校准薄膜沉积机台中机械手位置的方法
Chen et al. X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si (100) in nitrous oxide
US6247842B1 (en) Method of wafer temperature measurement
JP3248262B2 (ja) 半導体装置の製造方法
TW202307400A (zh) 實時量測薄膜厚度的方法
JP2002340794A (ja) 半導体ウェーハの赤外吸収測定法
US6008503A (en) Oxide film thickness standards
US20150219565A1 (en) Application of in-line thickness metrology and chamber matching in display manufacturing
Rosenthal et al. Infrared Analysis of Advanced thin film materials
Chopra et al. In situ measurements of ultrathin silicon oxide dissolution rates
CN116666265A (zh) 抛光硅片Haze值与化学氧化膜的精确控制方法
CN100514058C (zh) 酸槽与反应槽稳定度的侦测方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680055151.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 06753087

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 06753087

Country of ref document: EP

Kind code of ref document: A1