WO2008009165A1 - AN OPTICAL INSPECTING METHOD OF A PLASMA PROCESSING DEGREE OF A SiON FILM - Google Patents
AN OPTICAL INSPECTING METHOD OF A PLASMA PROCESSING DEGREE OF A SiON FILM Download PDFInfo
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- WO2008009165A1 WO2008009165A1 PCT/CN2006/001542 CN2006001542W WO2008009165A1 WO 2008009165 A1 WO2008009165 A1 WO 2008009165A1 CN 2006001542 W CN2006001542 W CN 2006001542W WO 2008009165 A1 WO2008009165 A1 WO 2008009165A1
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- plasma treatment
- degree
- silicon oxynitride
- oxynitride film
- sion film
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
Definitions
- the present invention relates to a semiconductor manufacturing process, and more particularly to an optical detecting method for plasma processing degree of a silicon oxynitride film.
- Plasma etching processes are widely used in the production of semiconductor devices and liquid crystal displays (hereinafter referred to as LCDs).
- the processing apparatus for the plasma treatment for example, is provided with an upper electrode and a lower electrode which are arranged in parallel with each other.
- a processing workpiece e.g., a semiconductor wafer
- a plasma is generated between the upper electrode and the lower electrode.
- the workpiece is subjected to etching of a specific pattern by the plasma.
- the present invention has been made to solve the above problems, and an object thereof is to provide a non-destructive and simple optical detection method for the degree of plasma treatment of a silicon oxynitride film.
- the method for optically detecting the degree of plasma treatment of the silicon oxynitride (hereinafter referred to as SION) film of the present invention comprises first using a chemical vapor deposition (hereinafter referred to as CVD) method for a semiconductor wafer having a size of, for example, 100 to 300 mm, for example.
- CVD chemical vapor deposition
- the SION film is deposited on the silicon, silicon germanium and arsenic bismuth wafers.
- the required reaction gases are, for example, silane Si and nitrous oxide N 2 0.
- the SION film formed by using a spectrometer has a refractive index between 1.5 and 2.2, and the reflectance measured by an ellipsometer is between 0.2 and 0.01, and then plasma is applied thereto.
- the plasma-treated SION film is detected by an optical detection method, and the degree of plasma treatment is judged based on the change in the refractive index or reflectance of the silicon oxynitride film.
- the optical detection method for the degree of plasma treatment of the SION film can measure the refractive index of the SION film after the plasma treatment by a spectrometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the refractive index in the above-described range.
- the optical detection method for the degree of plasma treatment of the SION film can also measure the reflectance of the SION film after the plasma treatment by an ellipsometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the reflectance in the above-mentioned range.
- the degree of plasma treatment of the SION film can be optically measured using a spectrometer, an ellipsometer or the like in a semiconductor manufacturing process.
- the wavelength of the SION film after plasma treatment can be any wavelength range between 150 and 850 nm or specific. wavelength.
- FIG. 1 is a process diagram of depositing a SION film by a CVD method and plasma treatment of a SION film at different times according to a preferred embodiment of the present invention.
- Fig. 2 is a graph showing refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) according to a preferred embodiment of the present invention.
- FIG. 3 is a graph showing reflectance measurement of a SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention.
- ellipsometer wavelength 248 nm
- Figure 1 is a process diagram for depositing a SION film by a CVD method and plasma treatment of a SION film at different times in accordance with a preferred embodiment of the present invention.
- a SION film is first deposited on a silicon wafer by a CVD method.
- the reaction gas used is Si, N 2 0, and the auxiliary gas may be N 2 , Ar, He.
- the deposited SION film is then subjected to plasma treatment at different times.
- FIG. 2 there is shown a graph of refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) in accordance with a preferred embodiment of the present invention.
- the refractive index measurement of the SION film after the time treatment by the spectrometer shows: The rate is approximately 1.9915.
- the refractive index measurement of the SION film after the time treatment of the spectrometer showed that the refractive index was about 1.9909.
- the SION film deposited on the silicon wafer was subjected to plasma treatment for 33 seconds as shown in Fig. 2.
- the refractive index measurement of the SION film after the time treatment by the spectrometer showed that the refractive index was about 1.9894.
- FIG. 3 is a graph showing the reflectance measurement of the SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention.
- the SION film after the time treatment is performed by using an ellipsometer. Reflectance measurements show a reflectivity of approximately 0.0645.
- the SION film deposited on the silicon wafer is subjected to plasma treatment for 30 seconds, as shown in FIG. 3, when the reflectance of the processed SION film is measured by an ellipsometer, The results show that the reflectivity is approximately 0.0627.
- the SION film deposited on the silicon wafer is subjected to plasma treatment for 33 seconds, as shown in FIG.
- the reflectance measurement of the SION film after the time treatment is performed by using an ellipsometer.
- the results show that the reflectivity is approximately 0.0624. It can be seen from the above results that the reflectivity of the SION film after plasma treatment is different at different times by the ellipsometer, and the reflectivity tends to decrease as the processing time increases.
- the refractive index is between 1.5 and 2.2
- the reflectance is between 0.2 and 0.01, and simultaneously found along with the plasma. As the processing time increases, both the refractive index and the reflectance tend to decrease.
- the degree of change in refractive index and reflectance which occurs after plasma treatment at different times by the SION film can achieve the result of quantitative plasma treatment, so that the degree of plasma treatment of the SION film can be easily confirmed.
Abstract
An optical inspecting method of a plasma processing degree of a SiON film includes: firstly, depositing the SiON film on a semiconductor wafer by using a chemical vapor deposition,and then performing the plasma processing on the SiON film, and finally performing the optical inspectin to the plasma processing degree of the SiON film using optical inspecting method. The plasma processing degree thereof is judged based on the change of the SiON film's refractivity or reflectivity.
Description
一种氮氧化硅薄膜的等离子处理程度的光学检测方法 技术领域 本发明涉及半导体制造工艺，特别是涉及一种氮氧化硅薄膜的等离 子处理程度的光学检测方法。 背景技术 在半导体器件与液晶显示器 （Liquid Crystal Display) (以下简称 LCD) 的生产过程中广泛地应用了等离子刻蚀处理。 用于该等离子处理 的处理装置， 例如， 配备了互相平行布置的上电极和下电极。 当将处理 工件（例如半导体晶片）放置并固定在下电极上时， 在上电极与下电极 之间产生等离子。 通过该等离子对处理工件进行特定图形的刻蚀。 在半 导体工艺中， 等离子处理在过程控制中占有着重要地位。 相应地， 检测 等离子处理程度也成为准确控制等离子处理的必要前提。但是到目前为 止， 通常使用的等离子处理程度检测方法不仅是破坏性的， 而且是繁琐 的。 所以提供一种非破坏性， 且简便的检测等离子处理程度一直是各半 导体厂家与集成电路 （Integrated Circuit) (以下简称 IC) 设计公司关 心的课题。 发明内容 本发明是为了解决上述课题而开发的，其目的是为了提供一种非 破坏性且简便的对氮氧化硅薄膜的等离子处理程度的光学检测方法。 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing process, and more particularly to an optical detecting method for plasma processing degree of a silicon oxynitride film. BACKGROUND OF THE INVENTION Plasma etching processes are widely used in the production of semiconductor devices and liquid crystal displays (hereinafter referred to as LCDs). The processing apparatus for the plasma treatment, for example, is provided with an upper electrode and a lower electrode which are arranged in parallel with each other. When a processing workpiece (e.g., a semiconductor wafer) is placed and fixed on the lower electrode, a plasma is generated between the upper electrode and the lower electrode. The workpiece is subjected to etching of a specific pattern by the plasma. In the semiconductor process, plasma processing plays an important role in process control. Accordingly, detecting the degree of plasma processing also becomes a necessary prerequisite for accurate control of plasma processing. However, until now, the commonly used plasma processing level detection method is not only destructive but also cumbersome. Therefore, providing a non-destructive and simple detection plasma processing degree has been a subject of concern for semiconductor manufacturers and integrated circuit (IC) design companies. Disclosure of the Invention The present invention has been made to solve the above problems, and an object thereof is to provide a non-destructive and simple optical detection method for the degree of plasma treatment of a silicon oxynitride film.
本发明的氮氧化硅 （以下简称 SION) 薄膜的等离子处理程度的 光学检测方法， 包括先用化学汽相沉积 （Chemical Vapor Deposition) (以下简称 CVD)法在尺寸为例如 100〜300mm半导体晶片，例如硅， 硅锗和砷锗晶片上沉积 SION薄膜， 化学汽相沉积 SION薄膜时， 所 需的反应气体例如为硅烷 Si 和一氧化二氮 N20， 辅助气体例如为
氮气 N2，氩气 Ar和氦气 He,所形成的 SION薄膜利用分光计测量的 折射率在 1.5〜2.2之间， 利用椭偏仪测量的反射率在 0.2 0.01之间， 然后对其进行等离子处理，接下来利用光学检测方法对等离子处理后 的 SION薄膜进行检测， 根据氮氧化硅薄膜的折射率或反射率的变化 判断其经等离子处理的程度。 对 SION薄膜的等离子处理程度的光学检测方法可以利用分光计 测量等离子处理后的 SION薄膜的折射率， 进而通过上述折射率在上 述区间内的变化程度达成量化等离子处理的结果。 The method for optically detecting the degree of plasma treatment of the silicon oxynitride (hereinafter referred to as SION) film of the present invention comprises first using a chemical vapor deposition (hereinafter referred to as CVD) method for a semiconductor wafer having a size of, for example, 100 to 300 mm, for example. The SION film is deposited on the silicon, silicon germanium and arsenic bismuth wafers. When the SION film is chemically vapor deposited, the required reaction gases are, for example, silane Si and nitrous oxide N 2 0. Nitrogen N 2 , argon Ar and helium He, the SION film formed by using a spectrometer has a refractive index between 1.5 and 2.2, and the reflectance measured by an ellipsometer is between 0.2 and 0.01, and then plasma is applied thereto. After the treatment, the plasma-treated SION film is detected by an optical detection method, and the degree of plasma treatment is judged based on the change in the refractive index or reflectance of the silicon oxynitride film. The optical detection method for the degree of plasma treatment of the SION film can measure the refractive index of the SION film after the plasma treatment by a spectrometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the refractive index in the above-described range.
对 SION薄膜的等离子处理程度的光学检测方法也可以利用椭偏 仪测量等离子处理后的 SION薄膜的反射率， 进而通过上述反射率在 上述区间内的变化程度达成量化等离子处理的结果。 对 SION薄膜的等离子处理程度利用分光计， 椭偏仪等半导体制 造工艺常使用的仪器对等离子处理后的 SION薄膜进行光学测量所使 用的波长可为位于 150〜850nm之间之任意波长区间或特定波长。 The optical detection method for the degree of plasma treatment of the SION film can also measure the reflectance of the SION film after the plasma treatment by an ellipsometer, and further achieve the result of the quantitative plasma treatment by the degree of change of the reflectance in the above-mentioned range. The degree of plasma treatment of the SION film can be optically measured using a spectrometer, an ellipsometer or the like in a semiconductor manufacturing process. The wavelength of the SION film after plasma treatment can be any wavelength range between 150 and 850 nm or specific. wavelength.
下面结合附图， 对本发明的具体实施作进一步的详细说明。 对于所 属技术领域的技术人员而言， 从对本发明的详细说明中， 本发明的上述 和其他目的、 特征和优点将显而易见。 附图说明 图 1 是本发明的一较佳实施例的利用 CVD方法沉积 SION薄膜 和对 SION薄膜进行不同时间的等离子处理的过程图。 图 2 是本发明的一较佳实施例的采用分光计 （波长 248nm) 对 不同时间等离子处理后的 SION薄膜进行折射率测量的曲线图。 The specific implementation of the present invention will be further described in detail below with reference to the accompanying drawings. The above and other objects, features and advantages of the present invention will become apparent to those skilled in the art. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process diagram of depositing a SION film by a CVD method and plasma treatment of a SION film at different times according to a preferred embodiment of the present invention. Fig. 2 is a graph showing refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) according to a preferred embodiment of the present invention.
图 3 是本发明的另一较佳实施例的采用椭偏仪（波长 248nm)对不 同时间等离子处理后的 SION薄膜进行反射率测量的曲线图。 具体实施方式
为了更清楚地揭示 SION薄膜的制备过程和等离子处理过程， 下 面参照附图 1， 进行具体描述。 图 1是本发明的一较佳实施例的利用 CVD方法沉积 SION薄膜和对 SION薄膜进行不同时间的等离子处 理的过程图。 首先利用 CVD方法在硅晶片上沉积 SION薄膜。 化学 汽相沉积时， 所采用反应气体的为 Si ， N20, 辅助气体可为 N2， Ar， He。 然后对沉积的 SION薄膜进行不同时间的等离子处理。 3 is a graph showing reflectance measurement of a SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention. detailed description In order to more clearly reveal the preparation process of the SION film and the plasma processing process, a detailed description will be made below with reference to FIG. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a process diagram for depositing a SION film by a CVD method and plasma treatment of a SION film at different times in accordance with a preferred embodiment of the present invention. A SION film is first deposited on a silicon wafer by a CVD method. In chemical vapor deposition, the reaction gas used is Si, N 2 0, and the auxiliary gas may be N 2 , Ar, He. The deposited SION film is then subjected to plasma treatment at different times.
下面请参照图 2，该图是本发明的一较佳实施例的采用分光计 (波 长 248nm)对不同时间等离子处理后的 SION薄膜进行折射率测量的 曲线图。 Referring now to Figure 2, there is shown a graph of refractive index measurement of a SION film after plasma treatment at different times using a spectrometer (wavelength 248 nm) in accordance with a preferred embodiment of the present invention.
在该较佳实施例中，对上述沉积在硅晶片上的 SION薄膜进行 27 秒的等离子处理时， 如图 2所示， 分光计对该时间处理后的 SION薄 膜的折射率测量结果显示： 折射率约为 1.9915。对沉积在硅晶片上的 SION薄膜进行 30秒的等离子处理时，如图 2所示，分光计对该时间 处理后的 SION薄膜的折射率测量结果显示： 折射率约为 1.9909。 对 沉积在硅晶片上的 SION薄膜进行 33秒的等离子处理时， 如图 2所 示。 分光计对该时间处理后的 SION薄膜的折射率测量结果显示： 折 射率约为 1.9894。 通过以上结果分析可知：利用分光计可以测出进行了不同时间等 离子处理后的 SION薄膜的折射率是不同的， 而且随着处理时间的增 加， 其折射率呈现降低的趋势。 再请参照图 3，图 3是本发明的另一较佳实施例的采用椭偏仪 (波 长 248nm)对不同时间等离子处理后的 SION薄膜进行反射率测量的 曲线图。 In the preferred embodiment, when the SION film deposited on the silicon wafer is subjected to plasma treatment for 27 seconds, as shown in FIG. 2, the refractive index measurement of the SION film after the time treatment by the spectrometer shows: The rate is approximately 1.9915. When the SION film deposited on the silicon wafer was subjected to plasma treatment for 30 seconds, as shown in Fig. 2, the refractive index measurement of the SION film after the time treatment of the spectrometer showed that the refractive index was about 1.9909. The SION film deposited on the silicon wafer was subjected to plasma treatment for 33 seconds as shown in Fig. 2. The refractive index measurement of the SION film after the time treatment by the spectrometer showed that the refractive index was about 1.9894. From the above results, it can be seen that the refractive index of the SION film after plasma treatment at different times can be measured by a spectrometer, and the refractive index of the SION film tends to decrease as the processing time increases. Referring to FIG. 3 again, FIG. 3 is a graph showing the reflectance measurement of the SION film after plasma treatment at different times using an ellipsometer (wavelength 248 nm) according to another preferred embodiment of the present invention.
在该本发明的另一较佳实施例中， 对上述沉积在硅晶片上的 SION薄膜进行 27秒的等离子处理时，如图 3所示，采用椭偏仪对该 时间处理后的 SION薄膜的反射率测量结果显示:反射率约为 0.0645。 对上述沉积在硅晶片上的 SION薄膜进行 30秒的等离子处理时， 如 图 3所示， 采用椭偏仪对此处理后的 SION薄膜进行反射率测量时，
结果显示： 反射率约为 0.0627。本发明的又一较佳实施例， 对上述沉 积在硅晶片上的 SION薄膜进行 33秒的等离子处理时， 如图 3所示， 采用椭偏仪对该时间处理后的 SION薄膜的反射率测量结果显示： 反 射率约为 0.0624。 通过以上结果分析可知：利用椭偏仪可以测出不同时间等离子处 理后的 SION薄膜的反射率是不同的， 而且随着处理时间的增加， 其 反射率呈现降低的趋势。 总的分析： 利用分光计和椭偏仪对本发明中涉及的 SION薄膜测 量结果分析可得： 其折射率在 1.5〜2.2之间， 其反射率在 0.2〜0.01之 间， 并且同时发现随着等离子处理时间的增加， 其折射率和反射率均 呈现降低的趋势。利用 SION薄膜在不同时间等离子处理后所发生折 射率与反射率变化程度可以达成量化等离子处理的结果，从而可以方 便地确认对 SION薄膜进行等离子处理的程度。 In another preferred embodiment of the present invention, when the SION film deposited on the silicon wafer is subjected to plasma treatment for 27 seconds, as shown in FIG. 3, the SION film after the time treatment is performed by using an ellipsometer. Reflectance measurements show a reflectivity of approximately 0.0645. When the SION film deposited on the silicon wafer is subjected to plasma treatment for 30 seconds, as shown in FIG. 3, when the reflectance of the processed SION film is measured by an ellipsometer, The results show that the reflectivity is approximately 0.0627. According to still another preferred embodiment of the present invention, when the SION film deposited on the silicon wafer is subjected to plasma treatment for 33 seconds, as shown in FIG. 3, the reflectance measurement of the SION film after the time treatment is performed by using an ellipsometer. The results show that the reflectivity is approximately 0.0624. It can be seen from the above results that the reflectivity of the SION film after plasma treatment is different at different times by the ellipsometer, and the reflectivity tends to decrease as the processing time increases. General analysis: Using the spectrometer and ellipsometer to analyze the results of the SION film measurement involved in the present invention, the refractive index is between 1.5 and 2.2, the reflectance is between 0.2 and 0.01, and simultaneously found along with the plasma. As the processing time increases, both the refractive index and the reflectance tend to decrease. The degree of change in refractive index and reflectance which occurs after plasma treatment at different times by the SION film can achieve the result of quantitative plasma treatment, so that the degree of plasma treatment of the SION film can be easily confirmed.
当然， 本发明还可有其他实施例， 在不背离本发明精神及其实质的 情况下， 所属技术领域的技术人员当可根据本发明作出各种相应的变更 和改型， 但这些相应的变更和改型都应属于本发明的权利要求的保护范 围。
Of course, there are other embodiments of the present invention, and various corresponding changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention. And modifications are intended to fall within the scope of the appended claims.
Claims
1. 一种氮氧化硅薄膜的等离子处理程度的光学检测方法， 包括 先用化学汽相沉积法在半导体晶片上沉积氮氧化硅薄膜，然后对其进 行等离子处理，最后利用光学检测方法对氮氧化硅薄膜的等离子处理 程度进行光学检测，根据氮氧化硅薄膜的折射率或反射率的变化判断 其经等离子处理的程度。 A method for optically detecting the degree of plasma treatment of a silicon oxynitride film, comprising first depositing a silicon oxynitride film on a semiconductor wafer by chemical vapor deposition, then subjecting it to plasma treatment, and finally using an optical detection method for oxynitriding The degree of plasma treatment of the silicon thin film is optically detected, and the degree of plasma treatment is judged based on the change in the refractive index or reflectance of the silicon oxynitride film.
2. 根据权利要求 1 所述的光学检测方法， 其特征是， 上述对氮 氧化硅薄膜的等离子处理程度的光学检测方法是利用分光计进行测 量， 上述氮氧化硅薄膜利用分光计测量的折射率在 1.5~2.2区间内， 利用分光计测量等离子处理后的氮氧化硅薄膜的折射率，进而通过上 述折射率在上述区间内的变化程度达成量化等离子处理程度的结果。 2. The optical detecting method according to claim 1, wherein the optical detecting method for the degree of plasma treatment of the silicon oxynitride film is measured by a spectrometer, and the refractive index of the silicon oxynitride film measured by a spectrometer is used. In the range of 1.5 to 2.2, the refractive index of the silicon oxynitride film after the plasma treatment was measured by a spectrometer, and the degree of change in the refractive index in the above-described range was further obtained as a result of quantifying the degree of plasma treatment.
3. 根据权利要求 1 所述的光学检测方法， 其特征是， 上述对氮 氧化硅薄膜的等离子处理程度的光学检测方法是利用椭偏仪进行测 量， 上述氮氧化硅薄膜利用椭偏仪测量的反射率在 0.2〜0.01区间内， 利用椭偏仪测量等离子处理后的氮氧化硅薄膜的反射率，进而通过反 射率在上述区间内的变化程度达成量化等离子处理程度的结果。 3. The optical detecting method according to claim 1, wherein the optical detecting method for the degree of plasma treatment of the silicon oxynitride film is measured by using an ellipsometer, and the silicon oxynitride film is measured by an ellipsometer. The reflectance was in the range of 0.2 to 0.01, and the reflectance of the silicon oxynitride film after the plasma treatment was measured by an ellipsometer, and the degree of change in the reflectance in the above-described range was further obtained as a result of quantifying the degree of plasma treatment.
4. 根据权利要求 2或 3所述的等离子处理程度的光学检测方法， 其特征是， 分光计或椭偏仪所使用的波长可为位于 150~850nm之间 之任意波长区间或特定波长。 4. The method of optically detecting plasma processing according to claim 2 or 3, wherein the wavelength used by the spectrometer or the ellipsometer is any wavelength interval between 150 and 850 nm or a specific wavelength.
5. 根据权利要求 1 所述的等离子处理程度的检测方法， 其特征 是， 所使用的半导体晶片为硅， 硅锗和砷锗。 The method of detecting the degree of plasma treatment according to claim 1, wherein the semiconductor wafer used is silicon, silicon germanium and arsenic arsenide.
6. 根据权利要求 1或 5所述的等离子处理程度的光学检测方法， 其特征是， 在化学汽相沉积氮氧化硅薄膜时， 所需的反应气体为硅烷 和一氧化二氮， 辅助气体为氮气， 氩气和氦气。
The optical detection method of plasma processing degree according to claim 1 or 5, wherein in the chemical vapor deposition of the silicon oxynitride film, the required reaction gases are silane and nitrous oxide, and the auxiliary gas is Nitrogen, argon and helium.
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| CNA2006800551510A CN101473211A (en) | 2006-07-03 | 2006-07-03 | Optical detection method for plasma treatment degree of silicon oxynitride film |
| PCT/CN2006/001542 WO2008009165A1 (en) | 2006-07-03 | 2006-07-03 | AN OPTICAL INSPECTING METHOD OF A PLASMA PROCESSING DEGREE OF A SiON FILM |
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