TW202307398A - Apparatus for measuring thickness of thin film in real time - Google Patents

Apparatus for measuring thickness of thin film in real time Download PDF

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TW202307398A
TW202307398A TW111130501A TW111130501A TW202307398A TW 202307398 A TW202307398 A TW 202307398A TW 111130501 A TW111130501 A TW 111130501A TW 111130501 A TW111130501 A TW 111130501A TW 202307398 A TW202307398 A TW 202307398A
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鄭慶煥
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
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    • G01N2015/1021—Measuring mass of individual particles

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Abstract

Provided is an apparatus for measuring a thickness of a thin film. The apparatus for measuring the thickness of the thin film includes a reaction chamber in which deposition of the thin film is performed, a mass spectrometer configured to measure gaseous by-products within the reaction chamber, and an operation part configured to calculate the thickness of the thin film based on data measured by the mass spectrometer.

Description

實時量測薄膜厚度的裝置Device for measuring film thickness in real time

實施例涉及一種用以在半導體/顯示器生產過程中快速量測一薄膜之厚度而不損壞待測樣品之表面的裝置，更具體地，涉及一種藉由實時分析殘留在已形成薄膜之反應腔內之材料的化學成分來量測薄膜之厚度的裝置。Embodiments relate to an apparatus for rapidly measuring the thickness of a thin film without damaging the surface of a sample to be measured in a semiconductor/display production process, and more particularly, to a method for real-time analysis of residues in a reaction chamber where a thin film has been formed A device for measuring the thickness of a thin film based on the chemical composition of the material.

為了在半導體晶圓上選擇性地形成諸如電介質、半導體與金屬等各種材料，半導體/顯示器製程應用了使用諸如蝕刻、沉積與清洗之各種化學反應的製程技術。在沉積製程中形成的薄膜是在晶圓上具有範圍在數奈米至微米內之極細厚度的層，且待形成之薄膜的厚度與組成等特性在很大程度上是取決於待沉積之材料的物理性質以及沉積製程條件。特別是，薄膜之厚度的精準控制，對於開發更薄、增加多層級的高度積體化半導體之材料更為重要。然而，由於薄膜的厚度受到諸如電漿功率、時間、腔室的形狀與尺寸，以及腔室中各種化學反應產生的副產物，還有顯示出高度相關性的待沉積材料之數量與時間的各種環境變數的影響，薄膜之厚度可在完成薄膜沉積的晶圓從腔室中卸載之後進行精確地量測。用於量測薄膜之厚度的技術包含使用探針的機械方法、光學方法以及使用顯微鏡的方法。In order to selectively form various materials such as dielectrics, semiconductors, and metals on semiconductor wafers, semiconductor/display processes employ process technologies that use various chemical reactions such as etching, deposition, and cleaning. The thin film formed in the deposition process is a layer on the wafer with an extremely fine thickness ranging from a few nanometers to microns, and the thickness and composition of the thin film to be formed are largely dependent on the material to be deposited Physical properties and deposition process conditions. In particular, the precise control of the thickness of the film is more important for the development of thinner, multi-layered and highly integrated semiconductor materials. However, since the thickness of the film is affected by factors such as plasma power, time, shape and size of the chamber, and by-products of various chemical reactions in the chamber, there are also various variables that show a high correlation between the amount of material to be deposited and the time. Influenced by environmental variables, the film thickness can be accurately measured after the film-deposited wafer is unloaded from the chamber. Techniques for measuring the thickness of thin films include mechanical methods using probes, optical methods, and methods using microscopes.

使用電子顯微鏡或原子力顯微鏡的方法是在透過切割樣品獲得一影像後量測厚度的方法，並具有直接以肉眼檢查厚度的優點。然而，此不僅需要更多的時間來進行量測，同時也需要具備處理待測晶圓之樣品的技術，也因此必須忍受樣品的耗損。The method using an electron microscope or an atomic force microscope is a method of measuring thickness after obtaining an image by cutting a sample, and has the advantage of directly checking the thickness with naked eyes. However, this not only requires more time for measurement, but also requires the technology to process the samples of the wafers to be tested, and thus must endure the loss of samples.

在機械方法中（WO 2010/151030 A2，J. Korean Soc. Precis. Eng., Vol. 32, No. 2, pp. 159-166），具有使用探針來獲得金屬薄膜以及有機層之厚度的優點，但缺點是不能一次量測多層、測量速度緩慢以及樣品會被破壞與汙染。In the mechanical method (WO 2010/151030 A2, J. Korean Soc. Precis. Eng., Vol. 32, No. 2, pp. 159-166), there is a possibility of using a probe to obtain the thickness of metal thin films and organic layers Advantages, but the disadvantage is that it cannot measure multiple layers at one time, the measurement speed is slow, and the sample will be damaged and polluted.

在廣泛且主要使用的光學方法中（WO 2016/171397 A1），光譜反射儀與反射式橢圓儀是藉由量測在薄膜表面上之入射光和反射光之間的偏振狀態的差異來量測薄膜的厚度。於此，雖然存在難以量測在超薄膜或發生干涉之波長區域中的厚度之限制，但存在能夠量測具有各種厚度之薄膜而不會有樣品耗損的優點。Among the widely and mainly used optical methods (WO 2016/171397 A1), spectroreflectometer and reflective ellipsometer measure by measuring the difference in polarization state between incident light and reflected light on the film surface Thickness of the film. Here, although there is a limitation that it is difficult to measure the thickness in an ultra-thin film or a wavelength region where interference occurs, there is an advantage that thin films having various thicknesses can be measured without sample loss.

在根據先前技術來量測薄膜厚度的裝置中，由於沉積有薄膜的晶圓是從反應腔中卸載至外部以量測薄膜的厚度，因而難以在生產過程中直接量測沉積的薄膜之厚度，甚至在沉積之後還必需執行各種後處理，以使沉積環境能夠持續地維持以維持薄膜的恆定厚度。然而，在具有更薄的薄膜以及更細的線寬之高度積體化半導體之材料的情況下，由於沉積環境中的微小變化而導致薄膜之厚度的變化會大幅地影響材料的缺陷率，因此，一種藉由實時精準地量測在沉積之後所形成之薄膜之厚度來實時地量測薄膜之厚度變化的裝置是有需要的。In the device for measuring the film thickness according to the prior art, since the wafer on which the film is deposited is unloaded from the reaction chamber to the outside to measure the thickness of the film, it is difficult to directly measure the thickness of the deposited film during the production process, It is necessary to perform various post-processing even after deposition so that the deposition environment can be continuously maintained to maintain a constant thickness of the film. However, in the case of highly integrated semiconductor materials with thinner films and thinner line widths, changes in the thickness of the film due to slight changes in the deposition environment can greatly affect the defect rate of the material, so Therefore, there is a need for a device for real-time measuring the thickness variation of a thin film by accurately measuring the thickness of the formed thin film after deposition in real time.

本案提供了一種能夠實時量測反應腔內之薄膜厚度的用以量測薄膜之厚度的裝置，以克服用以量測薄膜厚度之現有裝置的限制，所述現有裝置是在薄膜完全形成後卸載晶圓至反應腔的外部來量測薄膜的厚度。This case provides a device for measuring the thickness of the film that can measure the thickness of the film in the reaction chamber in real time, so as to overcome the limitation of the existing device for measuring the thickness of the film, which is unloaded after the film is completely formed The thickness of the film is measured from the wafer to the outside of the reaction chamber.

根據至少一實施例，一種用以量測薄膜之厚度的裝置包含：一反應腔，其中薄膜之沉積在此執行；一質譜儀，用以量測在反應腔中之氣態的副產物；以及一操作部件，用以根據質譜儀量測到的數據計算薄膜的厚度。According to at least one embodiment, an apparatus for measuring the thickness of a thin film comprises: a reaction chamber in which deposition of the thin film is performed; a mass spectrometer for measuring gaseous by-products in the reaction chamber; and a The operating part is used to calculate the thickness of the film according to the data measured by the mass spectrometer.

在執行薄膜之沉積的製程中，沉積反應是根據以下反應式來執行。In the process of performing thin film deposition, the deposition reaction is performed according to the following reaction formula.

SiH 4(g) + 4N 2O(g) → SiO 2(g) + 4N 2(g) + 2H 2O(g) + O 2(g) SiH 4 (g) + 4N 2 O (g) → SiO 2 (g) + 4N 2 (g) + 2H 2 O (g) + O 2 (g)

在執行薄膜之沉積的製程中，清洗反應是根據以下反應式來執行。In the process of performing thin film deposition, the cleaning reaction is performed according to the following reaction formula.

3SiO 2(s) + 4NF 3(g) + Ar(g) → 3SiF 4(g) + 2N 2O(g) + N 2(g) + O 2(g) + Ar(g) 3SiO 2 (s) + 4NF 3 (g) + Ar(g) → 3SiF 4 (g) + 2N 2 O(g) + N 2 (g) + O 2 (g) + Ar(g)

薄膜的厚度可隨著質譜儀所量測的副產物的總量之增加而增加。The thickness of the film can increase with the amount of by-products measured by the mass spectrometer.

薄膜的厚度可以是藉由將質譜儀所量測的副產物的總量乘以一特定比例常數所獲得的值。The thickness of the thin film may be a value obtained by multiplying the total amount of by-products measured by the mass spectrometer by a specific proportionality constant.

根據一實施例之用於量測薄膜之厚度的裝置10將參照所附圖式而被詳細地描述。A device 10 for measuring the thickness of a thin film according to an embodiment will be described in detail with reference to the accompanying drawings.

圖1為示出了根據一實施例之用於量測薄膜之厚度之裝置的示意圖。請參閱圖1，用於量測薄膜之厚度的裝置10包含反應腔11、質譜儀12以及操作部件13。反應腔11提供沉積薄膜在晶圓或基板上的空間，即執行沉積反應與清洗反應。在一實施例中，薄膜沉積製程可為電漿強化化學氣相沉積（plasma enhanced chemical vapor deposition，PE-CVD）SiO 2沉積製程。在此情況下，可根據以下反應式執行沉積反應。 FIG. 1 is a schematic diagram showing an apparatus for measuring the thickness of a thin film according to an embodiment. Please refer to FIG. 1 , the device 10 for measuring the thickness of a thin film includes a reaction chamber 11 , a mass spectrometer 12 and an operating part 13 . The reaction chamber 11 provides a space for depositing a thin film on a wafer or a substrate, that is, performing a deposition reaction and a cleaning reaction. In one embodiment, the film deposition process may be a plasma enhanced chemical vapor deposition (PE-CVD) SiO 2 deposition process. In this case, the deposition reaction may be performed according to the following reaction formula.

- 沉積反應：SiH 4(g) + 4N 2O(g) → SiO 2(g) + 4N 2(g) + 2H 2O(g) + O 2(g) - Deposition reaction: SiH 4 (g) + 4N 2 O(g) → SiO 2 (g) + 4N 2 (g) + 2H 2 O(g) + O 2 (g)

在沉積反應之後，執行清洗反應以移除反應腔11中的顆粒、異物等。在一實施例中，可根據以下反應式執行清洗反應。After the deposition reaction, a cleaning reaction is performed to remove particles, foreign matter, etc. in the reaction chamber 11 . In one embodiment, the cleaning reaction can be performed according to the following reaction formula.

- 清洗反應：3SiO 2(s) + 4NF 3(g) + Ar(g) → 3SiF 4(g) + 2N 2O(g) + N 2(g) + O 2(g) + Ar(g) - Cleaning reaction: 3SiO 2 (s) + 4NF 3 (g) + Ar(g) → 3SiF 4 (g) + 2N 2 O(g) + N 2 (g) + O 2 (g) + Ar(g)

然而，由於上述製程以及用於上述製程之反應腔11的配置和原理本身可和已知技術實質相同或由本技術領域人員輕易地從已知技術推導出，因此將省略其詳細描述。However, since the above-mentioned process and the configuration and principle of the reaction chamber 11 used in the above-mentioned process can be substantially the same as the known technology or can be easily deduced from the known technology by those skilled in the art, a detailed description thereof will be omitted.

質譜儀12用以在沉積反應及/或清洗反應期間量測反應腔11中之氣態的副產物。為此，質譜儀12可安裝與反應腔11直接連通或安裝與用於從反應腔11排出副產物的排氣部件（圖未示）連通。由於質譜儀12的配置和原理本身可和已知技術實質相同或由本技術領域人員輕易地從已知技術推導出，因此將省略其詳細描述。The mass spectrometer 12 is used to measure gaseous by-products in the reaction chamber 11 during the deposition reaction and/or cleaning reaction. To this end, the mass spectrometer 12 can be installed to directly communicate with the reaction chamber 11 or installed to communicate with an exhaust component (not shown) for discharging byproducts from the reaction chamber 11 . Since the configuration and principle of the mass spectrometer 12 itself can be substantially the same as the known technology or can be easily derived from the known technology by those skilled in the art, a detailed description thereof will be omitted.

操作部件13用以根據質譜儀12量測到的數據計算在薄膜沉積製程中沉積在晶圓上的SiO 2薄膜之厚度。 The operating part 13 is used for calculating the thickness of the SiO 2 film deposited on the wafer during the film deposition process according to the data measured by the mass spectrometer 12 .

更具體地，申請人已發現在質譜儀12量測到的數據和薄膜之厚度之間存在相關性。特別是，在上述製程中，發現薄膜的厚度隨著質譜儀12所量測的副產物之總量的增加而增加（參見圖2）。More specifically, applicants have discovered that there is a correlation between the data measured by the mass spectrometer 12 and the thickness of the thin film. In particular, in the process described above, it was found that the thickness of the film increased with the amount of by-products measured by the mass spectrometer 12 (see FIG. 2 ).

- 相關性：SiO 2厚度 (nm) ∝ ∑[副產物(g)] - Correlation: SiO 2 thickness (nm) ∝ ∑ [by-product (g)]

因此，操作部件13被設計成藉由將質譜儀12所量測的副產物之總量乘以一特定比例常數來計算薄膜的厚度。Therefore, the operating part 13 is designed to calculate the thickness of the film by multiplying the total amount of by-products measured by the mass spectrometer 12 by a certain proportional constant.

圖3為示出了根據一實施例之應用於量測薄膜厚度之裝置10的量測薄膜厚度之方法的流程圖。FIG. 3 is a flowchart illustrating a method for measuring film thickness applied to the device 10 for measuring film thickness according to an embodiment.

請參閱圖3，製造薄膜之厚度的方法是一種執行薄膜之沉積的製程。於此，執行沉積反應與清洗反應。此外，於執行沉積反應及/或清洗反應時，藉由使用質譜儀12來量測反應腔11內之氣態的副產物。Referring to FIG. 3, the method of manufacturing the thickness of the film is a process of performing the deposition of the film. Here, a deposition reaction and a cleaning reaction are performed. In addition, the gaseous by-products in the reaction chamber 11 are measured by using the mass spectrometer 12 when performing the deposition reaction and/or the cleaning reaction.

接續，將質譜儀12所量測的副產物之總量乘以一特定比例常數。如前所述，在前述之製程中，由於質譜儀12所量測的副產物之總量和薄膜的厚度成正比，可藉由副產物之總量來預測和監測薄膜的厚度。Next, the total amount of by-products measured by the mass spectrometer 12 is multiplied by a specific proportionality constant. As mentioned above, in the foregoing process, since the total amount of by-products measured by the mass spectrometer 12 is proportional to the thickness of the film, the thickness of the film can be predicted and monitored by the total amount of by-products.

在根據一實施例之用於量測薄膜之厚度的裝置中，於執行作為薄膜沉積製程的沉積反應及/或清洗反應時，可藉由使用質譜儀來量測氣態的副產物，然後，可根據總量導出薄膜的厚度以實時量測在反應腔內的薄膜之厚度。因此，可以在製程的早期階段對未形成所需厚度之薄膜的晶片進行處理，由於不需要執行不必要的後處理，降低了製造成本，從而提高了經濟效益，同時，可以在早期階段檢測到沉積環境，例如反應腔中的異常，以降低半導體材料的缺陷率，從而提高良品的生產效率。In the apparatus for measuring the thickness of a thin film according to an embodiment, when performing a deposition reaction and/or a cleaning reaction as a thin film deposition process, gaseous by-products can be measured by using a mass spectrometer, and then, can be The thickness of the film is derived from the total amount to measure the thickness of the film in the reaction chamber in real time. Therefore, wafers that are not formed with a thin film of the desired thickness can be processed at an early stage of the process, and since unnecessary post-processing is not performed, the manufacturing cost is reduced, thereby improving economic efficiency, and at the same time, it can be detected at an early stage. Deposition environment, such as abnormalities in the reaction chamber, to reduce the defect rate of semiconductor materials, thereby improving the production efficiency of good products.

如上所述的用於量測薄膜之厚度的裝置10僅是根據各種實施例之用於量測薄膜之厚度的裝置中之一。本案的技術精神不限於上方的實施例，並且如申請專利範圍所揭露的，本案的技術精神包含可為本案所屬領域中具有通常知識者輕易地修改的所有範圍。The above-mentioned device 10 for measuring the thickness of a thin film is only one of the devices for measuring the thickness of a thin film according to various embodiments. The technical spirit of the present case is not limited to the above embodiments, and as disclosed in the scope of the patent application, the technical spirit of the present case includes all ranges that can be easily modified by those having ordinary knowledge in the field to which the present case belongs.

10:裝置 11:反應腔 12:質譜儀 13:操作部件 10: Device 11: Reaction chamber 12: Mass spectrometer 13: Operating parts

附圖被包含以提供對本案的進一步理解，且被併入並構成本說明書的一部分。圖式示出了本案的示例性實施例，並且與說明書一起用於解釋本案的原理。在圖式中：The accompanying drawings are included to provide a further understanding of the present case, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the invention and, together with the description, serve to explain principles of the invention. In the schema:

[圖1]為示出了根據一實施例之用於量測薄膜之厚度之裝置的示意圖； [圖2]為示出了副產物之總量和薄膜之厚度之間相關性的圖表；以及 [圖3]為示出了根據一實施例之應用於製造薄膜厚度之裝置的量測薄膜厚度之方法的流程圖。 [FIG. 1] is a schematic diagram showing an apparatus for measuring the thickness of a thin film according to an embodiment; [FIG. 2] is a graph showing the correlation between the total amount of by-products and the thickness of the film; and [ Fig. 3 ] is a flow chart showing a method of measuring a film thickness applied to an apparatus for manufacturing a film thickness according to an embodiment.

Claims (5)

一種用以量測一薄膜之一厚度的裝置，該裝置包含： 一反應腔，其中該薄膜之沉積在此執行； 一質譜儀，用以量測在該反應腔中之氣態的副產物；及 一操作部件，用以根據該質譜儀量測到的數據計算該薄膜的該厚度。 A device for measuring the thickness of a thin film, the device comprising: a reaction chamber in which the deposition of the thin film is performed; a mass spectrometer for measuring gaseous by-products in the reaction chamber; and An operating part is used for calculating the thickness of the film according to the data measured by the mass spectrometer. 如請求項1所述的裝置，其中在執行該薄膜之沉積的製程中，沉積反應是根據以下反應式來執行： SiH 4(g) + 4N 2O(g) → SiO 2(g) + 4N 2(g) + 2H 2O(g) + O 2(g) The device according to claim 1, wherein in the process of depositing the thin film, the deposition reaction is performed according to the following reaction formula: SiH 4 (g) + 4N 2 O(g) → SiO 2 (g) + 4N 2 (g) + 2H2O (g) + O2 (g) 如請求項1所述的裝置，其中在執行該薄膜之沉積的製程中，清洗反應是根據以下反應式來執行： 3SiO 2(s) + 4NF 3(g) + Ar(g) → 3SiF 4(g) + 2N 2O(g) + N 2(g) + O 2(g) + Ar(g) The device as claimed in item 1, wherein in the process of performing the deposition of the thin film, the cleaning reaction is performed according to the following reaction formula: 3SiO 2 (s) + 4NF 3 (g) + Ar(g) → 3SiF 4 ( g) + 2N2O (g) + N2 (g) + O2 (g) + Ar(g) 如請求項1所述的裝置，其中該薄膜的該厚度隨著該質譜儀所量測的該副產物的總量之增加而增加。The device as claimed in claim 1, wherein the thickness of the film increases as the amount of the by-product measured by the mass spectrometer increases. 如請求項1所述的裝置，其中該薄膜的該厚度是藉由將該質譜儀所量測的該副產物的總量乘以一特定比例常數所獲得的值。The device as claimed in claim 1, wherein the thickness of the thin film is a value obtained by multiplying the total amount of the by-product measured by the mass spectrometer by a specific proportional constant.
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