TW202307400A - 實時量測薄膜厚度的方法 - Google Patents
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Abstract
所提供的是一種用以量測薄膜之厚度的方法。在所述用以量測薄膜之厚度的方法中，沉積反應和清洗反應作為反應腔中執行薄膜之沉積的製程，所述方法包含當執行沉積反應或清洗反應的至少一者時，使用質譜儀量測在反應腔中的氣態的副產物，以及根據質譜儀量測到的數據計算薄膜的厚度。
Description
實施例涉及一種用以在半導體/顯示器生產過程中快速量測一薄膜之厚度而不損壞待測樣品之表面的方法，更具體地，涉及一種藉由實時分析殘留在已形成薄膜之反應腔內之材料的化學成分來量測薄膜之厚度的方法。
為了在半導體晶圓上選擇性地形成諸如電介質、半導體與金屬等各種材料，半導體/顯示器製程應用了使用諸如蝕刻、沉積與清洗之各種化學反應的製程技術。在沉積製程中形成的薄膜是在晶圓上具有範圍在數奈米至微米內之極細厚度的層，且待形成之薄膜的厚度與組成等特性在很大程度上是取決於待沉積之材料的物理性質以及沉積製程條件。特別是，薄膜之厚度的精準控制，對於開發更薄、增加多層級的高度積體化半導體之材料更為重要。然而，由於薄膜的厚度受到諸如電漿功率、時間、腔室的形狀與尺寸，以及腔室中各種化學反應產生的副產物，還有顯示出高度相關性的待沉積材料之數量與時間的各種環境變數的影響，薄膜之厚度可在完成薄膜沉積的晶圓從腔室中卸載之後進行精確地量測。用於量測薄膜之厚度的技術包含使用探針的機械方法、光學方法以及使用顯微鏡的方法。
使用電子顯微鏡或原子力顯微鏡的方法是在透過切割樣品獲得一影像後量測厚度的方法，並具有直接以肉眼檢查厚度的優點。然而，此不僅需要更多的時間來進行量測，同時也需要具備處理待測晶圓之樣品的技術，也因此必須忍受樣品的耗損。
在機械方法中（WO 2010/151030 A2，J. Korean Soc. Precis. Eng., Vol. 32, No. 2, pp. 159-166），具有使用探針來獲得金屬薄膜以及有機層之厚度的優點，但缺點是不能一次量測多層、測量速度緩慢以及樣品會被破壞與汙染。
在廣泛且主要使用的光學方法中（WO 2016/171397 A1），光譜反射儀與反射式橢圓儀是藉由量測在薄膜表面上之入射光和反射光之間的偏振狀態的差異來量測薄膜的厚度。於此，雖然存在難以量測在超薄膜或發生干涉之波長區域中的厚度之限制，但存在能夠量測具有各種厚度之薄膜而不會有樣品耗損的優點。
在根據先前技術量測薄膜厚度的裝置中，由於沉積有薄膜的晶圓是從反應腔中卸載至外部以量測薄膜的厚度，因而難以在生產過程中直接量測沉積的薄膜之厚度，甚至在沉積之後還必需執行各種後處理，以使沉積環境能夠持續地維持以維持薄膜的恆定厚度。然而，在具有更薄的薄膜以及更細的線寬之高度積體化半導體之材料的情況下，由於沉積環境中的微小變化而導致薄膜之厚度的變化大幅地影響材料的缺陷率，因此，一種藉由實時精準地量測在沉積之後所形成之薄膜之厚度來實時地量測薄膜之厚度變化的方法是有需要的。
本案提供了一種能夠實時量測反應腔內之薄膜厚度的用以量測薄膜之厚度的方法，以克服用以量測薄膜厚度之現有方法的限制，所述現有方法是在薄膜完全形成後卸載晶圓至反應腔的外部來量測薄膜的厚度。
根據至少一實施例，一種用以量測薄膜之厚度的方法，其中沉積反應和清洗反應作為在反應腔中執行薄膜之沉積的製程，包含：當執行沉積反應或清洗反應的至少一者時，使用質譜儀量測在反應腔中的氣態的副產物；及根據質譜儀量測到的數據計算薄膜的厚度。
可根據以下反應式來執行沉積反應。
SiH
4(g) + 4N
2O(g) → SiO
2(g) + 4N
2(g) + 2H
2O(g) + O
2(g)
可根據以下反應式來執行清洗反應。
3SiO
2(s) + 4NF
3(g) + Ar(g) → 3SiF
4(g) + 2N
2O(g) + N
2(g) + O
2(g) + Ar(g)
薄膜的厚度可隨著質譜儀所量測的副產物的總量之增加而增加。
薄膜的厚度可以是藉由將質譜儀所量測的副產物的總量乘以一特定比例常數所獲得的值。
根據一實施例之用於量測薄膜之厚度的方法將參照所附圖式而被詳細地描述。
圖1為示出了根據一實施例之應用製造薄膜厚度之方法的用於量測薄膜之厚度之裝置10的示意圖。請參閱圖1，用於量測薄膜之厚度的裝置10包含反應腔11、質譜儀12以及操作部件13。反應腔11提供沉積薄膜在晶圓或基板上的空間，即執行沉積反應與清洗反應。在一實施例中，薄膜沉積製程可為電漿強化化學氣相沉積（plasma enhanced chemical vapor deposition，PE-CVD）SiO
2沉積製程。在此情況下，可根據以下反應式執行沉積反應。
- 沉積反應：SiH
4(g) + 4N
2O(g) → SiO
2(g) + 4N
2(g) + 2H
2O(g) + O
2(g)
在沉積反應之後，執行清洗反應以移除反應腔11中的顆粒、異物等。在一實施例中，可根據以下反應式執行清洗反應。
- 清洗反應：3SiO
2(s) + 4NF
3(g) + Ar(g) → 3SiF
4(g) + 2N
2O(g) + N
2(g) + O
2(g) + Ar(g)
然而，由於上述製程以及用於上述製程之反應腔11的配置和原理本身可和已知技術實質相同或由本技術領域人員輕易地從已知技術推導出，因此將省略其詳細描述。
質譜儀12用以在沉積反應及/或清洗反應期間量測反應腔11中之氣態的副產物。為此，質譜儀12可安裝與反應腔11直接連通或安裝與用於從反應腔11排出副產物的排氣部件（圖未示）連通。由於質譜儀12的配置和原理本身可和已知技術實質相同或由本技術領域人員輕易地從已知技術推導出，因此將省略其詳細描述。
操作部件13用以根據質譜儀12量測到的數據計算在薄膜沉積製程中沉積在晶圓上的SiO
2薄膜之厚度。
更具體地，申請人已發現在質譜儀12量測到的數據和薄膜之厚度之間存在相關性。特別是，在上述製程中，發現薄膜的厚度隨著質譜儀12所量測的副產物之總量的增加而增加（參見圖2）。
- 相關性：SiO
2厚度 (nm) ∝ ∑[副產物(g)]
因此，操作部件13被設計成藉由將質譜儀12所量測的副產物之總量乘以一特定比例常數來計算薄膜的厚度。
圖3為示出了根據一實施例之量測薄膜厚度之方法的流程圖。
請參閱圖3，製造薄膜之厚度的方法是一種執行薄膜之沉積的製程。於此，執行沉積反應與清洗反應。此外，於執行沉積反應及/或清洗反應時，藉由使用質譜儀12來量測反應腔11內之氣態的副產物。
接續，將質譜儀12所量測的副產物之總量乘以一特定比例常數。如前所述，在前述之製程中，由於質譜儀12所量測的副產物之總量和薄膜的厚度成正比，可藉由副產物之總量來預測和監測薄膜的厚度。
在根據一實施例之用於量測薄膜之厚度的方法中，於執行作為薄膜沉積製程的沉積反應及/或清洗反應時，可藉由使用質譜儀來量測氣態的副產物，然後，可根據總量導出薄膜的厚度以實時量測在反應腔內的薄膜之厚度。因此，可以在製程的早期階段對未形成所需厚度之薄膜的晶片進行處理，由於不需要執行不必要的後處理，降低了製造成本，從而提高了經濟效益，同時，可以在早期階段檢測到沉積環境，例如反應腔中的異常，以降低半導體材料的缺陷率，從而提高良品的生產效率。
如上所述的用於量測薄膜之厚度的方法僅是根據各種實施例之用於量測薄膜之厚度的方法中之一。本案的技術精神不限於上方的實施例，並且如申請專利範圍所揭露的，本案的技術精神包含可為本案所屬領域中具有通常知識者輕易地修改的所有範圍。
10:裝置
11:反應腔
12:質譜儀
13:操作部件
附圖被包含以提供對本案的進一步理解，且被併入並構成本說明書的一部分。圖式示出了本案的示例性實施例，並且與說明書一起用於解釋本案的原理。在圖式中：
[圖1]為示出了根據一實施例之應用製造薄膜厚度之方法的用於量測薄膜之厚度之裝置的示意圖；
[圖2]為示出了副產物之總量和薄膜之厚度之間相關性的圖表；以及
[圖3]為示出了根據一實施例之量測薄膜厚度之方法的流程圖。
Claims (5)
- 一種用以量測一薄膜之一厚度的方法，其中一沉積反應和一清洗反應作為在一反應腔中執行該薄膜之沉積的製程，該方法包含： 當執行該沉積反應或該清洗反應的至少一者時，使用一質譜儀量測在該反應腔中的氣態的副產物；及 根據該質譜儀量測到的數據計算該薄膜的該厚度。
- 如請求項1所述的方法，其中該沉積反應是根據以下反應式來執行： SiH 4(g) + 4N 2O(g) → SiO 2(g) + 4N 2(g) + 2H 2O(g) + O 2(g)
- 如請求項1所述的方法，其中該清洗反應是根據以下反應式來執行： 3SiO 2(s) + 4NF 3(g) + Ar(g) → 3SiF 4(g) + 2N 2O(g) + N 2(g) + O 2(g) + Ar(g)
- 如請求項1所述的方法，其中該薄膜的該厚度隨著該質譜儀所量測的該副產物的總量之增加而增加。
- 如請求項1所述的方法，其中該薄膜的該厚度是藉由將該質譜儀所量測的該副產物的總量乘以一特定比例常數所獲得的值。
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| JP2754823B2 (ja) * | 1990-01-30 | 1998-05-20 | 日本電気株式会社 | 膜厚測定方法 |
| US5988187A (en) * | 1996-07-09 | 1999-11-23 | Lam Research Corporation | Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports |
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