WO2007117000A1 - Module laser a semi-conducteurs pour l'excitation - Google Patents

Module laser a semi-conducteurs pour l'excitation Download PDF

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Publication number
WO2007117000A1
WO2007117000A1 PCT/JP2007/057843 JP2007057843W WO2007117000A1 WO 2007117000 A1 WO2007117000 A1 WO 2007117000A1 JP 2007057843 W JP2007057843 W JP 2007057843W WO 2007117000 A1 WO2007117000 A1 WO 2007117000A1
Authority
WO
WIPO (PCT)
Prior art keywords
package
phosphor
excitation
laser module
semiconductor laser
Prior art date
Application number
PCT/JP2007/057843
Other languages
English (en)
Japanese (ja)
Inventor
Shigeki Sakaguchi
Original Assignee
Central Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Company, Limited filed Critical Central Glass Company, Limited
Publication of WO2007117000A1 publication Critical patent/WO2007117000A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
    • H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02235—Getter material for absorbing contamination

Definitions

  • the present invention relates to a laser package in a pumping semiconductor laser module that has high output and high reliability used in an optical amplifier.
  • EDFAs Er-doped fiber amplifiers
  • semiconductor lasers with wavelengths of 980 and 1480 nm as pumping light sources.
  • EDFAs tend to increase in output with the evolution of optical networks and circuits. For this reason, pumping semiconductor lasers have also increased in output, especially in the 980 nm band.
  • the EDF A excitation laser used in the optical network is generally a single-mode laser, but the energy density increases as the laser output increases. Opportunities also increase. Optical damage may occur due to adhesion of impurities on the laser chip emission surface.
  • impurities are known to be organic substances, the inside of the laser package is sealed with a dry inert gas containing a small amount of oxygen in order to prevent the deposition of impurities.
  • a technique for stopping is disclosed (see Patent Document 1).
  • an organic substance is oxidized with oxygen and decomposed into moisture and carbon dioxide gas, and the generated gas component is adsorbed by an adsorbent disposed in a package.
  • organic impurities can be oxidized with oxygen to prevent the impurities from adhering to the laser light emitting surface.
  • Patent Document 1 Japanese Patent No. 3452214
  • the oxygen is added to the sealing gas of the laser package while excluding moisture, while the reaction between oxygen and organic impurities and the package material force are released hydrogen and Moisture is inevitably generated by this reaction.
  • the reaction between oxygen and organic impurities and the package material force are released hydrogen and Moisture is inevitably generated by this reaction.
  • At least a photocatalyst having a photocatalytic action and a phosphor that generates excitation light that absorbs laser light and activates the photocatalyst are incorporated in the package.
  • An excitation semiconductor laser module is provided. This semiconductor laser module is different from the conventional technology in which oxygen is contained in the sealed gas in the package.
  • FIG. 1 is a diagram showing an example of an embodiment of the present invention.
  • the present invention can be used not only for communication systems in the field of optical communication but also for application fields of optical transmission such as evaluation and measurement.
  • a semiconductor pumping array used for an optical fiber amplifier or an optical fiber laser is used.
  • a trace amount of moisture and organic impurities contained in the sealing gas inside the package can be removed, which prevents failures such as optical damage of the laser chip. Therefore, it is possible to manufacture a semiconductor laser module for excitation with high output and high reliability.
  • FIG. 1 shows an example of an embodiment of the present invention.
  • the laser chip 1 emits laser light from the emission surface when an electric current is supplied from the outside.
  • the laser light is coupled to the output fiber 3 by an optical coupling means such as a lens and is output to the outside.
  • an optical coupling means such as a lens
  • a part of the laser beam is not necessarily output to the outside (usually about 30%) is scattered inside the package 2.
  • the light scattered inside the package 2 is absorbed by the phosphor 5, and the phosphor 5 generates fluorescence having a wavelength that activates a photocatalyst different from the laser light wavelength.
  • the generated fluorescence is absorbed by the photocatalyst 4, and organic impurities present in a trace amount in the package sealing gas are decomposed by the photocatalytic reaction.
  • the reaction product is adsorbed by the adsorbent and removed from the sealing gas.
  • Laser chip 1 was a GaAs laser chip with an oscillation wavelength of 980 nm.
  • the phosphor 5 using Yb (Itsuterubiu beam) and Tm (thulium) trace (total of about 0.8 wt 0/0) the added yttrium oxide-based ceramics are infrared visible conversion phosphor.
  • a WO—TiO-based catalyst that can generate a catalytic function even by irradiation with visible light was used.
  • the concentration of WO was about 3% by weight. Phosphor and light
  • the catalyst body was in the shape of a chip having a size of about 3 mm square and a thickness of about 0.5 mm.
  • the knocker was a mini-DIL type, and the chip-like photocatalyst and phosphor were fixed inside the package lid with an inorganic adhesive. After the laser chip assembly was accommodated inside the package, the lid was fixed to the package body by welding.
  • the laser light of 980 nm scattered inside the package is absorbed by a coordinated multiphoton absorption process by Yb and Tm ions contained in the phosphor, and the phosphor generates fluorescence around 470 nm. Since photocatalyst 4 contains a WO component, it is around 500 nm.
  • the mini-DIL type laser module manufactured as described above was kept in a thermostatic chamber set at a temperature of 70 ° C and continuously operated by supplying current so that the fiber output became 200 mW. Even after 5000 hours, the output remained within 1% of the fluctuation, and no reduction in output was observed. As a result, a semiconductor laser module for excitation having high output and high reliability was obtained by using the present invention.
  • Infrared photostimulable phosphor is Ca S (calcium sulphate) with Eu (Yuguchi Pium), Sm (Samarium), Nd (Neodymium) added in small amounts (total 1.2% by weight). Was used. The size was about 3 mm square and the thickness was about 0.5 mm, and it was fixed to the back of the knocker lid.
  • a mini-DIL type laser module was produced in the same manner as in Example 1 except that the infrared photostimulable phosphor was irradiated with ultraviolet rays prior to welding the lid to the package body.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Catalysts (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un module laser à semi-conducteurs pour l'excitation caractérisé en ce qu'au moins un corps photocatalyseur ayant une activité photocatalytique et un phosphore qui absorbe la lumière laser et génère une lumière d'excitation pour activer le corps photocatalyseur sont agencés dans un boîtier.
PCT/JP2007/057843 2006-04-12 2007-04-09 Module laser a semi-conducteurs pour l'excitation WO2007117000A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-109865 2006-04-12
JP2006109865A JP2007287727A (ja) 2006-04-12 2006-04-12 励起用半導体レーザモジュール

Publications (1)

Publication Number Publication Date
WO2007117000A1 true WO2007117000A1 (fr) 2007-10-18

Family

ID=38581273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057843 WO2007117000A1 (fr) 2006-04-12 2007-04-09 Module laser a semi-conducteurs pour l'excitation

Country Status (2)

Country Link
JP (1) JP2007287727A (fr)
WO (1) WO2007117000A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354898A (zh) * 2011-09-21 2012-02-15 华南理工大学 一种单频光纤激光器模块

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267120A (ja) * 2008-04-25 2009-11-12 Mitsubishi Electric Corp 光半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002346394A (ja) * 2001-05-25 2002-12-03 Akiba:Kk 高効率光触媒組成物、それを用いた塗料、基体、並びにそれを用いた対象物の塗装方法
JP2003243761A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体パッケージ
JP2004146496A (ja) * 2002-10-23 2004-05-20 Toyoda Gosei Co Ltd 発光装置
JP2004179595A (ja) * 2002-11-29 2004-06-24 Hitachi Printing Solutions Ltd 光記録装置
JP2004179157A (ja) * 2002-11-15 2004-06-24 Matsushita Electric Ind Co Ltd 発光素子、発光素子の製造法及びプラズマディスプレイパネルの製造方法
JP2004356006A (ja) * 2003-05-30 2004-12-16 Okaya Electric Ind Co Ltd 光触媒付放電パネル及びその製造方法
WO2005088787A1 (fr) * 2004-03-10 2005-09-22 Matsushita Electric Industrial Co., Ltd. Source de lumière cohérente et système optique
JP2006084214A (ja) * 2004-09-14 2006-03-30 Tokyo Tsushinki Kogyo Kk 赤外線検知器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002346394A (ja) * 2001-05-25 2002-12-03 Akiba:Kk 高効率光触媒組成物、それを用いた塗料、基体、並びにそれを用いた対象物の塗装方法
JP2003243761A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体パッケージ
JP2004146496A (ja) * 2002-10-23 2004-05-20 Toyoda Gosei Co Ltd 発光装置
JP2004179157A (ja) * 2002-11-15 2004-06-24 Matsushita Electric Ind Co Ltd 発光素子、発光素子の製造法及びプラズマディスプレイパネルの製造方法
JP2004179595A (ja) * 2002-11-29 2004-06-24 Hitachi Printing Solutions Ltd 光記録装置
JP2004356006A (ja) * 2003-05-30 2004-12-16 Okaya Electric Ind Co Ltd 光触媒付放電パネル及びその製造方法
WO2005088787A1 (fr) * 2004-03-10 2005-09-22 Matsushita Electric Industrial Co., Ltd. Source de lumière cohérente et système optique
JP2006084214A (ja) * 2004-09-14 2006-03-30 Tokyo Tsushinki Kogyo Kk 赤外線検知器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354898A (zh) * 2011-09-21 2012-02-15 华南理工大学 一种单频光纤激光器模块
CN102354898B (zh) * 2011-09-21 2013-02-13 华南理工大学 一种单频光纤激光器模块

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