Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
  • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
  • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
  • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
  • H10P72/135—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
  • H10P72/15—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
  • H10P72/155—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterised by a material, a roughness, a coating or the like
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
  • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
  • H10P72/3312—Vertical transfer of a batch of workpieces

Definitions

• Substrate support substrate processing unit, and substrate support method
• the present invention relates to a substrate support that supports a plurality of substrates so as to be parallel to each other at a predetermined interval, a substrate processing unit including the substrate support, and a substrate support that supports a plurality of substrates.
• the present invention relates to a substrate support method.
• the batch processing can be performed on the notch of the substrate having the power of 50 substrates.
• the substrate processing process is performed. Make sure to apply various treatments such as washing and drying to each batch!
• a substrate support is disposed in the processing container so as to be movable up and down, and a processing agent such as cleaning water or dry steam is provided in the processing container.
• a support is provided so as to extend in the horizontal direction from the lower end of the elongated arm of the substrate support, and the support supports a plurality of substrates at a predetermined interval. I started to support them so that they were parallel to each other.
• the nozzle is mounted in the processing container in a state where the nozzle is extended in the front-rear direction (horizontal direction) so as to be parallel to the support of the substrate support. It was.
• the processing agent is sprayed toward a plurality of substrates in the processing container such as the nozzle cover, and the surface of each substrate is processed by the processing agent sprayed from the nozzle.
• the processing container such as the nozzle cover
• the substrate closest to the arm is shielded by the arm depending on the processing conditions such as the type of processing agent sprayed from the nozzle and the injection amount.
• the flow state of the processing agent sprayed from the nozzle differs between the central part of the substrate and the left and right parts of the substrate that are shielded by the arm. As a result, there is a risk of processing failure.
• a method in which a substrate closest to the arm among a plurality of substrates supported by a support is a dummy substrate (for example, Japanese Patent Laid-Open No. Hei. (See 6-84868). That is, of the plurality of substrates supported by the support, the second and subsequent substrates counted from the arm side are closest to the arm and shielded by the substrate (dummy substrate). It is not affected by such an arm. For this reason, among the plurality of substrates supported by the support, the second and subsequent substrates counted by the arm side force can equalize the flow state of the treatment agent on the surface of the substrate. Occurrence can be prevented in advance.
• the dummy substrate must be discarded each time, and the number of substrates supported by the support and subjected to the desired processing is reduced by the number of dummy substrates. As a result, the throughput in the processing process is reduced.
• the present invention has been made in consideration of such points, and the substrate closest to the arm among a plurality of substrates supported by the substrate support can be covered with a shielding surface. This makes it possible to uniformize the flow of the treatment agent on the surface of the substrate, thereby preventing the occurrence of treatment failure, and for the substrate to be supported by all substrate supports. It is an object of the present invention to provide a substrate support, a substrate processing unit, and a substrate support method capable of performing processing uniformly with a processing agent or the like.
• the substrate support of the present invention is a substrate support that supports a plurality of substrates so as to be parallel to each other at a predetermined interval, and is an arm that extends in the vertical direction and is movable up and down at least in the vertical direction. And a support body that is provided to extend in the horizontal direction and has a plurality of support grooves for supporting the substrate formed at predetermined intervals along the horizontal direction, and a plurality of support bodies that are to be supported by the support body.
• a shielding body provided so as to face a substrate closest to the arm among a plurality of substrates, wherein the shielding surface facing the substrate nearest to the arm formed by the shielding body and the arm is a surface of the substrate.
• a shield that is substantially the same shape or wider than the surface of the substrate and has a material force having a specific heat larger than that of the substrate.
• the arm-side surface of the substrate that is closest to the arm among the plurality of substrates supported by the support can be covered with the shield, and the surface of the substrate
• the shielding body is made of a material having a specific heat larger than that of the substrate
• IPA gas isopropyl alcohol gas
• the shielding body is used. Even when IPA is adsorbed on the shield, the temperature of the shield does not rise so much. For this reason, in the vicinity of the shield As a result, a sufficient amount of IPA is adsorbed to the substrate to be treated, so that it is possible to prevent generation of processing defects on the substrate and to reduce the amount of IPA gas used.
• the shield is detachable from the arm.
• the shield can be retrofitted to the existing substrate support, and the workability of the replacement of the shield can be improved.
• Another substrate support of the present invention is a substrate support that supports a plurality of substrates so as to be parallel to each other at a predetermined interval, and extends in the vertical direction so as to be movable up and down at least in the vertical direction. And an arm that is provided so as to extend in the horizontal direction and has a plurality of support grooves for supporting the substrate formed at predetermined intervals along the horizontal direction.
• a shielding surface facing the substrate closest to the arm in the shielding portion, having a shielding portion facing the substrate closest to the arm among the plurality of substrates to be supported by the support. Is substantially the same shape as the surface of the substrate or wider than the surface of the substrate, and the shielding portion has a material force having a specific heat larger than that of the substrate.
• the arm-side surface of the substrate closest to the arm among the plurality of substrates supported by the support can be covered with the shielding portion of the arm.
• the flow state of the treatment agent on the surface can be made uniform, and the occurrence of treatment defects on the substrate closest to the arm can be prevented in advance.
• the shielding part of the arm is made of a material cover having a specific heat larger than that of the substrate, IPA gas (isopropyl alcohol gas), which is a desiccant, is used as a processing agent for processing the substrate. Even when IPA or the like is adsorbed to the shield part of the arm, the temperature of the shield part does not rise so much. For this reason, a sufficient amount of IPA is adsorbed to the substrate in the vicinity of the shielded part of the arm, so that it becomes possible to prevent processing defects from occurring on the substrate and to use the IPA gas. The amount can be reduced.
• the shield is preferably made of a synthetic resin having a specific heat higher than that of the substrate.
• the shield comprises a polyether ether. It must consist of at least one of the following groups: Terketone (PEEK), Ethylene trifluoride chloride (PCTFE), Polytetrafluoroethylene (PTFE) and Polyvinylidene fluoride (PVDF) More preferred.
• a substrate processing unit of the present invention includes a processing container that performs processing simultaneously with a processing agent on a plurality of substrates, and a plurality of substrates that are disposed inside the processing container and that have a predetermined interval.
• the substrate support is provided so as to extend in the vertical direction and at least move up and down in the vertical direction, and is provided to extend in the horizontal direction from the arm.
• a support body in which a plurality of support grooves for supporting the substrate are formed at predetermined intervals along the horizontal direction, and a substrate closest to the arm among the plurality of substrates to be supported by the support body
• Tsuteori or consists specific heat material larger mosquito ⁇ et than the substrate and feature in that it has a shield, such as Ru, a.
• another substrate processing unit of the present invention includes a processing container that performs processing simultaneously with a processing agent on a plurality of substrates, and a plurality of substrates disposed inside the processing container.
• a substrate support that supports the substrate support so as to be parallel to each other at a predetermined interval, and the substrate support extends in the vertical direction and can move up and down at least in the vertical direction;
• a plurality of support grooves formed at predetermined intervals along the horizontal direction, and the arm should be supported by the support body.
• the plurality of substrates have a shielding portion facing the substrate closest to the arm, and the shielding surface facing the substrate closest to the arm in the shielding portion has substantially the same shape as the surface of the substrate or the surface of the substrate Wider than
• the shielding portion is characterized by a material force having a specific heat larger than that of the substrate.
• each of these substrate processing units since each of the above-described substrate supports is provided, the substrate closest to the arm among the plurality of substrates supported by the substrate support is used as the shielding surface. Can be covered, the flow state of the treatment agent on the surface of the substrate can be made uniform, For this reason, it is possible to prevent the occurrence of processing defects, and the processing force can be uniformly applied to all substrates supported by the substrate support.
• the substrate support method of the present invention is a substrate support method in which a plurality of substrates are supported by a substrate support so as to be parallel to each other at a predetermined interval, extending in the vertical direction, and capable of moving up and down at least in the vertical direction.
• the arm, the arm force provided so as to extend in the horizontal direction, and a plurality of support grooves for supporting the substrate are formed at predetermined intervals along the horizontal direction, and the support A shield provided to face the substrate closest to the arm among the plurality of substrates to be supported by the shield, facing the substrate closest to the arm formed by the shield and the arm
• a substrate support is provided that includes a shielding body having a shielding surface that is substantially the same shape as the surface of the substrate or wider than the surface of the substrate, and is made of a material having a specific heat larger than that of the substrate. And supporting the plurality of substrates on the support of the substrate support, and among the plurality of substrates supported by the support, the back of the substrate is shielded closest to the shield. And a process for making it face the body.
• Another substrate support method of the present invention is a substrate support method in which a plurality of substrates are supported by a substrate support so as to be parallel to each other at a predetermined interval, extending in the vertical direction and at least in the vertical direction.
• the arm force and the arm force are provided so as to extend in the horizontal direction, and a plurality of support grooves for supporting the substrate are formed at predetermined intervals along the horizontal direction.
• the arm has a shielding portion facing a substrate closest to the arm among a plurality of substrates to be supported by the support, and the arm is closest to the arm in the shielding portion.
• the substrate support is such that the shielding surface facing the near substrate is substantially the same shape as the surface of the substrate or wider than the surface of the substrate, and the shielding portion is composed of a material cover having a specific heat larger than that of the substrate. Craftsmen preparing tools Then, the plurality of substrates are supported by the support of the substrate support, and the back surface of the substrate closest to the arm shielding portion among the plurality of substrates supported by the support at that time is And a step of facing the shielding portion.
• the back surface of the plurality of substrates supported by the support is closest to the shielding portion of the shielding body or arm, and the back surface of the shielding body or arm is close to the substrate.
• the surface is directed to the shielding part, the surface on which the processing is performed on the substrate does not face the shielding part or the shielding part of the arm. For this reason, the processing on the surface of the substrate closest to the shielding body or the shielding portion of the arm can be made uniform with the processing on the surface of other substrates.
• FIG. 1 is a plan view showing a substrate processing apparatus according to the present invention.
• FIG. 2 is a block diagram showing a substrate cleaning / drying unit in the substrate processing apparatus of FIG. 1.
• FIG. 3 is a front sectional view of the substrate cleaning / drying unit shown in FIG.
• FIG. 4 is a side cross-sectional view of the substrate cleaning / drying unit shown in FIG.
• FIG. 5 is a front view showing a substrate support provided in the substrate cleaning / drying unit shown in FIG.
• FIG. 6 is a side view of the substrate support shown in FIG.
• FIG. 7 is a plan view of the substrate support shown in FIG.
• FIG. 8 is an operation explanatory diagram of the substrate cleaning / drying unit shown in FIG. 2 and is an explanatory diagram showing an operation during cleaning preparation.
• FIG. 9 is an operation explanatory diagram of the substrate cleaning / drying unit shown in FIG. 2, and is an explanatory diagram showing an operation during a cleaning process.
• FIG. 10 is an operation explanatory diagram of the substrate cleaning / drying unit shown in FIG. 2, and is an explanatory diagram showing an operation during a drying process.
• FIG. 11 is a front view showing a substrate support of another configuration provided in the substrate cleaning / drying unit shown in FIG. 2.
• 12 is a side view of a substrate support having another configuration shown in FIG.
• FIG. 13 is a plan view of a substrate support having another configuration shown in FIG.
• a specific configuration of a substrate processing apparatus including a substrate processing unit (substrate cleaning / drying unit) having a substrate support according to the present invention will be described with reference to the drawings.
• a case where the present invention is applied to a substrate processing apparatus for cleaning a semiconductor substrate (Ueno) and then drying it will be described as an example.
• the substrate processing apparatus 1 is housed in a carrier loading / unloading section 4 that loads and unloads a carrier 3 that houses a plurality of wafers 2 (substrates), and a plurality of carriers 3.
• a notch forming unit 6 that forms batch 5 for batch processing by combining wafers 2 and a substrate processing unit 7 that performs cleaning processing and drying processing of wafer 2 for each batch 5 are provided.
• the carrier loading / unloading unit 4 includes a carrier stage 8 on which the carrier 3 is placed, and a hermetic door 9 formed on the carrier stage 8.
• a carrier transport mechanism 10 is arranged inside the opening / closing door 9. When loading the Ueno 2, the carrier transport mechanism 10 temporarily stores the carrier 3 placed on the carrier stage 8 in the carrier stock 11 as needed, and also stores the carrier 3 on the carrier platform 12. Is being transported.
• the carrier 3 containing the wafer 2 that has undergone a series of processes in the substrate processing unit 7 is placed on the carrier mounting table 12, contrary to the above loading.
• the mounted carrier 3 is temporarily stored in the carrier stock 11 by the carrier transport mechanism 10 as necessary, and the carrier 3 is transported to the carrier stage 8.
• the notch forming unit 6 includes a substrate transfer mechanism 14 for simultaneously transferring a plurality of wafers 2 accommodated in the carrier 3 inside the open / close door 13, and a wafer 2 transferred by the substrate transfer mechanism 14.
• the batch forming mechanism 15 for forming the batch 5 from the wafer 2 and the substrate transport mechanism 14 while changing the arrangement interval of the substrate Therefore, it has a substrate mutual positional relationship changing mechanism 16 for changing the mutual positional relationship of the plurality of wafers 2 being conveyed.
• the notch forming unit 6 has a batch transport mechanism 17, and the notch transport mechanism 17 transfers the batch 5 formed by the notch forming mechanism 15 between the batch forming unit 6 and the substrate processing unit 7. At the same time, the notch 5 is transported inside the substrate processing section 7.
• the notch forming unit 6 includes a wafer accommodation state detection sensor 18 for detecting the accommodation state of the wafer 2 accommodated in the carrier 3, and a notch (notch) of a plurality of wafers 2 accommodated in the carrier 3. And a notch liner 19 for adjusting the position of the head.
• a batch 5 composed of a plurality of (for example, 50) wafers 2 to be collectively processed in the substrate processing unit 7 is formed.
• the notch forming unit 6 the batch 5 is conveyed to the substrate processing unit 7.
• the notch forming unit 6 receives the notch 5 from the substrate processing unit 7, stores the wafer 2 in the original carrier 3, and loads the carrier 3 in and out of the carrier. Transport it to part 4.
• the substrate processing unit 7 has a cleaning / drying mechanism 20 that cleans and dries the wafer 2 and a cleaning mechanism 21 that cleans the wafer 2.
• the cleaning / drying mechanism 20 is provided in parallel with a substrate cleaning / drying unit 23 that performs cleaning and drying by moving the batch 5 up and down by the lifting mechanism 22 and a transport mechanism cleaning unit 24 that cleans the patch transport mechanism 17.
• the cleaning mechanism 21 includes first to third chemical treatment tanks 25, 26, and 27 for treating the batch 5 with chemicals, and first to third pure water treatment tanks 28 for treating the notch 5 with pure water. 29, 30, and the first to third chemical solution treatment tanks 25, 26, 27 and the first to third pure water treatment tanks 28, 29, 30 to carry the batch 5 Third transfer devices 31, 32, and 33 are included.
• the batch transport mechanism 17 described above is installed so as to extend in the left-right direction in FIG. 1 along the cleaning / drying mechanism 20 and the cleaning mechanism 21.
• the starting end portion of the batch transport mechanism 17 is provided in the batch forming unit 6.
• the batch 5 formed by the notch forming unit 6 is moved by the batch transfer mechanism 17 by the lifting / lowering mechanism 22 of the cleaning / drying mechanism 20 and the first to third transfer devices 31 of the cleaning mechanism 21. , 32, and 33. Then, the wafer 2 is processed for each batch 5 in each cleaning / drying mechanism 20 and cleaning mechanism 21, and then the processed batch 5 is processed into the lifting / lowering mechanism 22 of the cleaning / drying mechanism 20 and the first to third of the cleaning mechanism 21.
• the batch transfer mechanism 17 transfers the processed batch 5 to the batch forming unit 6 again from the transfer devices 31, 32, and 33 to the batch transfer mechanism 17.
• the wafer processing apparatus 1 loads the wafer 2 into the batch forming section 6 for each carrier 3 by the carrier loading / unloading section 4, and batches the notch forming section 6 together.
• a batch 5 for processing is formed and delivered to the substrate processing unit 7, and the substrate processing unit 7 processes the wafer 2 in batches for each batch 5.
• the batch 5 after processing is then transferred again to the batch forming unit 6, and the wafer 2 constituting the batch 5 is received again in the carrier 3 in the notch forming unit 6, and the carrier loading / unloading unit 4
• the carrier 3 containing the processed wafer 2 is unloaded by the carrier loading / unloading unit 4.
• the substrate cleaning / drying unit 23 includes a cleaning unit 34 for cleaning the wafer 2 in batch 5 and a drying unit 35 for drying the wafer 2 in batch 5 It is the structure which connected continuously up and down. Inside the cleaning unit 34 and the drying unit 35, a substrate support 36 for moving the wafer 2 up and down in batches 5 between the units 34 and 35 is disposed so as to be movable up and down.
• the substrate support 36 includes an arm 37 extended vertically and a lower end on the front side of the arm 37. And four support bodies 38, 39, 40, 41 extended in the front-rear direction (left-right direction in FIG. 6). Each support 38, 39, 40, 41 is mounted in parallel with a space left and right. Then, as shown in FIG. 5, a connecting body 42 is installed between the front ends of the two left support bodies 38 and 39, and is connected between the front end sections of the two right support bodies 40 and 41. Body 43 is installed.
• support grooves 44, 45, 46, 47 for supporting the wafer 2 vertically one by one at the upper end of each support 38, 39, 40, 41 front and rear At regular intervals Formed.
• the wafers 2 are supported by the support grooves 44, 45, 46, 47 so that a plurality of wafers 2 can be supported in parallel at a predetermined interval in the front-rear direction.
• the arm 37 is linked to the lifting mechanism 22 so that the wafer 2 can be lifted and lowered by the batch 5 between the cleaning unit 34 and the drying unit 35 by the lifting mechanism 22.
• a controller 48 is connected to the elevating mechanism 22, and the elevating mechanism 22 is driven and controlled by the controller 48.
• the substrate support 36 is located on the front surface of the arm 37 (left side in FIG. 6), that is, among the plurality of wafers 2 supported by the support bodies 38, 39, 40, and 41.
• a substantially semi-disc-shaped shield 49 is detachably attached to a surface facing the adjacent wafer 2 by a pair of upper and lower connectors 50 and 51.
• the shield 49 is made of a material having a specific heat higher than that of the wafer 2, for example, a synthetic resin having chemical resistance, heat resistance and mechanical strength against chemicals and organic solvents.
• the shield 49 has at least one of the group consisting of polyetheretherketone (PEEK), ethylene trifluoride chloride (PCTFE), polytetrafluoroethylene (PTFE), and polyvinylidene fluoride (PVDF). It is especially preferred that it is composed of one synthetic resin.
• PEEK polyetheretherketone
• PCTFE ethylene trifluoride chloride
• PTFE polytetrafluoroethylene
• PVDF polyvinylidene fluoride
• the substrate support 36 forms a shield surface 52 that faces the wafer 2 and covers the surface of the wafer 2 between the arm 37 and the wafer 2.
• the shielding surface 52 is formed in substantially the same shape as the surface of the wafer 2 by the lower end front surface 53 of the arm 37 and the front surface 54 of the shielding body 49.
• the shielding surface 52 shields the right and left side force treatment agent of the arm 37 from flowing toward the surface of the wafer 2 closest to the arm 37 among the plurality of wafers 2. For this reason, the shielding surface 52 has a function of making the flow state of the processing agent on the surface of the wafer 2 closest to the arm 37 the same as that of the other wafers 2. Note that the shielding surface 52 formed by the lower end front surface 53 of the arm 37 and the front surface 54 of the shielding body 49 is wider than the surface of the wafer 2!
• the cleaning unit 34 includes a bottomed rectangular box-shaped cleaning processing container 55 having an open upper end, and a cleaning liquid supply nozzle 58 attached to the left and right side walls 56 and 57 of the cleaning processing container 55 for spraying and supplying cleaning liquid. , 59.
• a drain pipe 61 is connected to the bottom wall 60 of the cleaning container 55.
• An open / close valve 62 is interposed in the middle of the drain pipe 61.
• an annular overflow tank 63 is attached to the upper outer portion of the cleaning container 55, and a drain pipe 65 is connected to the bottom wall 64 of the overflow tank 63.
• An opening / closing valve 66 is interposed in the door.
• a pure water supply source 67 for supplying pure water and a chemical liquid supply source 68 for supplying chemical liquid are connected to the cleaning liquid supply nozzles 58 and 59 via a three-way cock 69. Yes. Then, by switching the three-way cock 69, pure water or chemical liquid can be selectively supplied from the cleaning liquid supply nozzles 58 and 59 into the cleaning processing container 55.
• a control unit 48 is connected to the on-off valves 62 and 66 and the three-way cock 69, and the on-off valves 62 and 66 and the three-way cock 69 are driven and controlled by the control unit 48.
• the drying unit 35 has a substantially box-shaped drying processing container 70 having an open lower end.
• a shutter mechanism 71 is disposed below the drying processing container 70.
• the shutter mechanism 71 has a shutter accommodating portion 73 formed on the left side portion of the casing 72, and the shutter 74 is accommodated in the shutter accommodating portion 73 so as to be freely opened and closed.
• the shutter 74 is linked to the opening / closing mechanism 75, and the opening / closing mechanism 75 is connected to the control unit 48.
• the controller 48 controls the opening / closing mechanism 75 to drive.
• the upper part of the drying processing container 70 is formed in a semicircular arc cross section, and a through hole 76 for inserting the arm 37 of the substrate support 36 is formed in the upper end part. .
• a packing 77 is attached to the through hole 76.
• an elevating mechanism 78 is interlocked with the drying processing container 70, and the elevating mechanism 78 is connected to the control unit 48.
• the controller 48 drives and controls the lifting mechanism 78.
• the drying processing container 70 is lowered by the lifting mechanism 78, the flange 79 formed at the lower end portion of the drying processing container 70 is in close contact with the shutter 74 of the shutter mechanism 71.
• dry steam eg, IPA gas: isopropyl alcohol gas, etc.
• a carrier gas nitrogen gas, etc.
• gas discharge ports 82, 83 for discharging dry steam toward the upper part on the inner side are formed at intervals in the front-rear direction.
• a drying steam supply source 84 for supplying the drying steam together with the carrier gas is connected to the drying steam supply nozzles 80 and 81 via an opening / closing valve 85.
• the dry steam supply nozzles 80, 81 can supply the IPA gas together with the carrier gas into the drying processing container 70.
• a control unit 48 is connected to the on-off valve 85, and the on-off valve 85 is driven and controlled by the control unit 48.
• the wafer 2 is moved up and down between the cleaning unit 34 and the drying unit 35 in batches 5 by the substrate support 36.
• An elevating space 86 necessary for raising and lowering the arm 37 of the substrate support 36 is formed in the rear part in the cleaning processing container 55 and the rear part in the drying processing container 70 of the drying unit 35.
• the cleaning liquid supply nozzles 58 and 59 are disposed so as to extend to the lifting space 86 on the side of the arm 37. Further, the drying steam supply nozzles 80 and 81 are disposed in the drying processing container 70 in a state of being extended to the lifting space 86 on the side of the arm 37.
• the cleaning liquid supply nozzles 58 and 59 and the drying steam supply nozzles 80 and 81 are extended to the lifting space 86 on the side of the arm 37, they are supported by the supports 38, 39, 40, and 41.
• a processing agent such as cleaning liquid or dry steam flows from the side of the arm 37 toward the surface of the wafer 2 closest to the arm 37 among the plurality of wafers 2, and the surface of the wafer 2 closest to the arm 37 Compared with other wafers 2, more processing agent is supplied.
• the shielding surface 52 shields the processing agent from flowing from the left and right sides of the arm 37 toward the surface of the wafer 2 closest to the arm 37.
• the flow state of the processing agent on the surface of the wafer 2 closest to the arm 37 is set to the same state as the other wafers 2.
• the cleaning liquid supply nozzles 58 and 59 may be provided with a heater (not shown) for controlling the temperature of the processing agent such as the cleaning liquid.
• a heater for controlling the temperature of the processing agent such as the cleaning liquid.
• the wetted part of the heater (the part in contact with the treatment agent), the support 38, 39, 40, 41, the arm 37, or the cleaning treatment container 55 and the drying treatment container 70 may be made of synthetic quartz. It may be configured.
• the wafer 2 closest to the arm 37 among the plurality of wafers 2 supported by the substrate support 36 can be covered with the shielding surface 52.
• the flow of the treatment agent on the surface of 2 will be made uniform to prevent the occurrence of treatment defects.
• the shielding surface 52 is formed in substantially the same shape as the surface of the wafer 2, the most of the plurality of wafers 2 supported by the substrate support 36 is used.
• the flow state of the processing agent on the surface of the wafer 2 close to the arm 37 and the other wafers 2 can be made uniform, and a plurality of wafers 2 can be processed uniformly.
• the shielding surface 52 is formed by detachably providing the shielding member 49 on the substrate support 36, the shielding member is provided on the existing substrate processing apparatus 1. 49 can be retrofitted and the workability of replacing the shield 49 can be improved!
• the substrate cleaning / drying unit 23 is configured as described above, and is driven and controlled by the control unit 48.
• the control unit 48 can drive and control each unit of the substrate processing apparatus 1 as well as the substrate cleaning / drying unit 23.
• the control unit 48 drives and controls the substrate cleaning / drying unit 23 so that the cleaning process and the drying process of the wafer 2 are continuously performed.
• the control unit 48 performs initial setting of the substrate cleaning / drying unit 23. Specifically, as shown in FIG. 8 (a), the control unit 48 closes the open / close valve 62 of the cleaning container 55 and the open / close valve 66 of the overflow tank 63, and opens and closes it. Use mechanism 75 to open shutter 74. Then, the control unit 48 arranges the substrate support 36 with an interval above the shutter mechanism 71 using the lifting mechanism 22, and dries the substrate support 36 with an interval above the substrate support 36 using the lifting mechanism 78. Arrange treatment container 70.
• control unit 48 drives and controls the three-way cock 69 to supply pure water from the pure water supply source 67 to the inside of the cleaning processing container 55 through the cleaning liquid supply nozzles 58 and 59. At this time, the control unit 48 opens the open / close valve 66 of the overflow tank 63 so that the pure water overflowed from the cleaning container 55 can be discharged.
• the control unit 48 drives and controls the batch transport mechanism 17, and each wafer 2 constituting the batch 5 transported by the batch transport mechanism 17 is transferred to the substrate. It is made to fit in the support grooves 44 to 47 formed in the support bodies 38 to 41 of the support tool 36. As a result, each wafer 2 is supported by the supports 38 to 41.
• the respective wafers 2 face each other so that the front surfaces or back surfaces of the two wafers 2 fitted in the adjacent support grooves 44 to 47 face each other. 2 is supported by the supports 38-41. Further, among the plurality of wafers 2 supported by the respective supports 38 to 41, the wafer 2 is moved to the support grooves 44 to 47 so that the back surface of the wafer 2 closest to the shield 49 faces the shield 49. Insert the
• control unit 48 prepares for the cleaning process by immersing the wafer 2 placed on the substrate support 36 in pure water stored in the cleaning processing container 55.
• control unit 48 lowers the substrate support 36 to the inside of the cleaning processing container 55 by using the lifting mechanism 22, whereby the substrate support 36 The wafer 2 placed on is immersed in pure water stored in the cleaning container 55.
• control unit 48 performs a cleaning process on the wafer 2 inside the cleaning process container 55.
• the control unit 48 keeps the open / close valve 62 of the cleaning container 55 closed, and keeps the open / close valve 66 of the overflow tank 63 open.
• the chemical solution (cleaning solution) is supplied from the chemical solution supply source 68 to the inside of the cleaning container 55 through the cleaning solution supply nozzles 58 and 59. As a result, pure water is washed and treated.
• the vessel 55 gradually overflows into the overflow tank 63, and finally the chemical solution is stored in the cleaning container 55. Thereafter, the wafer 2 immersed in the chemical solution stored in the cleaning treatment container 55 is cleaned with the chemical solution (chemical solution cleaning process).
• control unit 48 controls the driving of the three-way cock 69 while keeping the open / close valve 62 of the cleaning container 55 closed and the open / close valve 66 of the overflow tank 63 open.
• Pure water cleaning liquid
• the control unit 48 controls the driving of the three-way cock 69 while keeping the open / close valve 62 of the cleaning container 55 closed and the open / close valve 66 of the overflow tank 63 open.
• Pure water cleaning liquid
• the control unit 48 controls the driving of the three-way cock 69 while keeping the open / close valve 62 of the cleaning container 55 closed and the open / close valve 66 of the overflow tank 63 open.
• Pure water cleaning liquid
• the control unit 48 controls the driving of the three-way cock 69 while keeping the open / close valve 62 of the cleaning container 55 closed and the open / close valve 66 of the overflow tank 63 open.
• Pure water cleaning liquid
• the control unit 48 controls the driving of the three-way cock 69 while keeping the open / close
• control unit 48 raises the positional force inside the cleaning processing container 55 of the wafer 2 placed on the substrate support 36 to the position inside the drying processing container 70.
• the controller 48 lowers the drying processing container 70 to a position directly above the shutter mechanism 71 using the lifting mechanism 78, and the lifting mechanism 22 Is used to lift the substrate support 36 from the position inside the cleaning processing container 55 to the position inside the drying processing container 70, so that the wafer 2 placed on the substrate support 36 is moved inside the drying processing container 70. Transport to.
• control unit 48 closes the lower end opening of the drying processing container 70 with the shutter 74 of the shutter mechanism 71.
• control unit 48 closes the shutter 74 of the shirt mechanism 71 using the opening / closing mechanism 75, and this shutter 74 is connected to the lower end of the drying processing container 70. Adhere closely to the opening.
• control unit 48 supplies the dry steam together with the carrier gas into the dry processing container 70 for a predetermined time.
• control unit 48 opens the on-off valve 85.
• dry steam IPA gas
• the control unit 48 opens the on-off valve 85.
• the front surface of the arm 37 of the substrate support 36 that is, the most arm among the plurality of wafers 2 supported by the supports 38, 39, 40, 41 is provided. Since the shielding surface 52 is formed on the surface facing the wafer 2 close to 37, the dry steam is generated from the left and right sides of the arm 37 toward the surface of the wafer 2 closest to the arm 37 by the shielding surface 52. The flow of the dry steam on the surface of the wafer 2 is the same as that of the other wafers 2, which is shielded from flowing in and is closest to the arm 37.
• the wafer 2 that is closest to the arm 37 among the plurality of wafers 2 supported by the substrate support 36 can be covered with the shielding surface 52.
• the flow state of the dry steam on the surface is made uniform to prevent the occurrence of processing defects.
• the shield 49 also has a material force having a specific heat larger than that of Ueno 2, IPA gas or the like is used as a treatment agent for treating Ueno 2 as described above. Even when IPA or the like is adsorbed on the shield 49, the temperature of the wafer 2 does not rise so much. For this reason, a sufficient amount of IPA is adsorbed to the wafer 2 in the vicinity of the shield 49, and it becomes possible to prevent the processing defect from occurring in the wafer 2 and to prevent the IPA gas from being generated. The amount of use can be reduced.
• the plurality of wafers 2 are supported on the support bodies 38, 39, 40, 41 of the substrate support 36, the plurality of wafers 2 supported by the support bodies 38, 39, 40, 41 are supported.
• the wafer 2 is closest to the shield 49, so that the back of the wafer 2 faces the shield 49! /, So the wafer 2 is cleaned and dried.
• the surface that is the surface on which is performed does not face the shield 49. For this reason, the processing on the surface of the wafer 2 closest to the shield 49 can be made uniform with the processing on the surface of the other wafer 2.
• each of the wafers 2 is supported by the support members 38, 39, 40, 41 so that the front surfaces or back surfaces of the two wafers 2 fitted in the adjacent support grooves 44, 45, 46, 47 face each other. Therefore, for each wafer 2 supported by the supports 38, 39, 40, 41, the surfaces that are the surfaces to be processed are faced to each other. The drying process can be made uniform.
• the control unit 48 raises the drying processing container 70 by the lifting mechanism 78 and receives the wafer 2 from the substrate support 36 by the notch transport mechanism 17. In this way, a series of drive control for the substrate cleaning / drying unit 23 by the control unit 48 is completed.
• substrate support and the substrate processing / drying unit (substrate processing unit) according to the present invention can cover various changes that are not limited to the above-described embodiments.
• the force that forms the shielding surface 52 between the arm 37 of the substrate support 36 and the wafer 2 is not limited to this, and the surface of the wafer 2 from the arm 37 side is not limited thereto.
• the shielding surface 52 may be formed so as to face the wafer 2.
• the shielding surface 52 may be formed in front of or behind the arm 37 of the substrate support 36, and the shielding body 52 having the shielding surface 52 is provided in the cleaning processing container 55 or the drying processing container 70. May be installed.
• FIG. 12 is a side view of the substrate support 36 shown in FIG.
• FIG. 12 is a plan view of the substrate support 36 shown in FIG.
• the arm 37 is a shielding portion that faces the wafer 2 closest to the arm 37 among the plurality of wafers 2 to be supported by the supports 38, 39, 40, 41. Includes 37a.
• the shielding surface facing the wafer 2 in the shielding portion 37 a is substantially the same shape as the surface of the wafer 2 or wider than the surface of the wafer 2.
• the shielding portion 37a is made of a material having a specific heat larger than that of the wafer 2, specifically, for example, trifluoride-ethylene (PCTFE).
• PCTFE trifluoride-ethylene
• a substrate support 36 a plurality of supports supported by the supports 38, 39, 40, 41 are provided.
• the wafer 2 is closest to the arm 37!
• the surface of the wafer 2 on the arm 37 side can be covered with the shielding portion 37a of the arm 37.
• the flow state of the processing agent on the surface of the wafer 2 can be made uniform, and the occurrence of processing defects in the wafer 2 can be prevented in advance, closest to the arm 37.
• the shielding portion 37a of the arm 37 is made of a material cover having a specific heat larger than that of the wafer 2, the IPA gas (isopropyl alcohol gas) which is a desiccant is used as a processing agent for processing the wafer 2.
• a substrate support 36 as shown in FIGS. 5 to 7 was prepared.
• the substrate support 36 includes four arms 37 extended in the vertical direction, and four arms extended in the front-rear direction (the horizontal direction in FIG. 6) at the front lower end of the arm 37.
• the support bodies 38, 39, 40, and 41 are provided.
• Support grooves 44, 45, 46, 47 for vertically supporting the wafer 2 one by one are formed at the upper and lower ends of each support 38, 39, 40, 41 at regular intervals. .
• the support grooves 44, 45, 46, 47 it becomes possible to support a plurality of wafers 2 parallel to each other at a predetermined interval. ing.
• the substrate support 36 is located on the front surface of the arm 37 (left side in FIG. 6), that is, among the plurality of wafers 2 supported by the support bodies 38, 39, 40, and 41.
• a substantially semi-disc-shaped shield 49 is detachably attached to a surface facing the adjacent wafer 2 by a pair of upper and lower connectors 50 and 51.
• the shield 49 is made of a synthetic resin of polyether ether ketone (PEEK), which is a material having a specific heat larger than that of the wafer 2. like this
• the substrate support 36 forms a shield surface 52 between the arm 37 and the wafer 2 so as to face the wafer 2 and cover the surface of the wafer 2! / .
• the shielding surface 52 is formed in a shape substantially the same as the surface of the wafer 2 by the lower end front surface 53 of the arm 37 and the front surface 54 of the shielding body 49.
• the front surfaces or back surfaces of the two wafers 2 fitted in the adjacent support grooves 44 to 47 face each other.
• Each wafer 2 was supported on the supports 38 to 41 so as to fit each other. Further, among the plurality of wafers 2 supported by the respective support bodies 38 to 41, the wafer 2 is fitted into the support grooves 44 to 47 so that the back surface of the wafer 2 closest to the shield body 49 faces the shield body 49. Went.
• a substrate support 36 Using such a substrate support 36, a plurality of wafers 2 supported by the substrate support 36 are simultaneously cleaned by the cleaning unit 34, and then the plurality of sheets are dried by the drying unit 35. Wafer 2 was simultaneously dried with IPA gas. After drying, the number of V and watermarks formed on the surface of the wafer 2 closest to the arm 37 among the plurality of wafers 2 supported by the supports 38, 39, 40, 41 was counted. The number of watermarks counted was four.
• the substrate support 36 as shown in FIGS. 5 to 7 was prepared by removing the shield 49.
• a plurality of wafers 2 are simultaneously cleaned by the cleaning unit 34, and then the plurality of wafers 2 are cleaned by the drying unit 35.
• Simultaneous drying with IPA gas After drying, the number of watermarks formed on the surface of the wafer 2 closest to the arm 37 among the plurality of wafers 2 supported by the supports 38, 39, 40, 41 was counted. The number of watermarks counted was 175. Watermarks were formed on the left and right portions of the wafer 2 on the left and right sides of the surface of the wafer 2 when they were shielded by the arm 37.
• the shielding surface 52 is formed on the wafer 2 that is closest to the arm 37 by providing the shielding body 49 on the substrate support 36, it is compared with the case where the shielding body 49 is not provided.
• the number of watermarks formed on the surface of the wafer 2 can be greatly reduced. That is, compared with the substrate support tool according to the comparative example, according to the substrate support tool 36 according to the present embodiment, the arm 37 among the plurality of wafers 2 supported by the supports 38, 39, 40, 41 is the most.
• the shield 49 is made of a synthetic resin of polyether ether ketone (PEEK), which is a material having a specific heat larger than that of the wafer 2, it is difficult for the shield 49 to adsorb IPA or the like. The temperature will not rise so much, and a sufficient amount of IPA will be adsorbed to the wafer 2 in the vicinity of the shield 49, and it will be possible to prevent processing defects from occurring on the wafer 2. There was found.
• PEEK polyether ether ketone

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• Cleaning Or Drying Semiconductors (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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Citations (4)

• 2007
  • 2007-03-20 WO PCT/JP2007/055708 patent/WO2007108477A1/ja not_active Ceased
  • 2007-03-22 TW TW096109923A patent/TW200805558A/zh unknown

Patent Citations (4)

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