WO2007049603A1 - Appareil a etages, procede de correction de coordonnees pour celui-ci, appareil d'exposition et procede de production du dispositif - Google Patents

Appareil a etages, procede de correction de coordonnees pour celui-ci, appareil d'exposition et procede de production du dispositif Download PDF

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Publication number
WO2007049603A1
WO2007049603A1 PCT/JP2006/321142 JP2006321142W WO2007049603A1 WO 2007049603 A1 WO2007049603 A1 WO 2007049603A1 JP 2006321142 W JP2006321142 W JP 2006321142W WO 2007049603 A1 WO2007049603 A1 WO 2007049603A1
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WO
WIPO (PCT)
Prior art keywords
deformation
position information
stage
wafer
unit
Prior art date
Application number
PCT/JP2006/321142
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English (en)
Japanese (ja)
Inventor
Akimitsu Ebihara
Masato Takahashi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2007542585A priority Critical patent/JP5040657B2/ja
Publication of WO2007049603A1 publication Critical patent/WO2007049603A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment

Definitions

  • the present invention relates to a stage apparatus and an exposure apparatus having the stage apparatus. Furthermore, the present invention relates to a coordinate correction method and a device manufacturing method for a stage apparatus.
  • lithographic process which is one of the manufacturing processes of microdevices (such as electronic devices) such as semiconductor devices
  • a pattern image of a mask (reticle, photomask, etc.) is applied to a substrate (weno, , Ceramic plates, glass plates, etc.) are used.
  • the exposure apparatus include a batch exposure type (stationary exposure type) projection exposure apparatus such as a stepper, and a scanning exposure type projection exposure apparatus (scanning type exposure apparatus) such as a scanning stepper.
  • the exposure apparatus includes a stage device.
  • the table unit of the stage apparatus is provided with a reflective surface (mirror surface).
  • the reflecting surface is used for highly accurate position measurement using an optical measuring instrument such as a laser interferometer.
  • the position of the table portion is measured and controlled in nanometer units. As the required accuracy increases, the effects of the surface shape (irregularity) of the reflecting surface and the thermal deformation of the surface plate that supports the optical measuring instrument are raised.
  • heat may be accumulated in the table unit, and the table unit and the reflective surface may be thermally deformed.
  • Patent Document 1 discloses a technique for measuring the surface shape of the reflective surface for each lot (for example, several tens of substrates) and correcting the position of the thermally deformed table portion and the reflective surface.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-252246
  • An object of the present invention is to provide a stage apparatus that is position-controlled with high accuracy and a coordinate correction method thereof.
  • the surface plate (31), the moving table (WTB) arranged on the surface plate (31), and the position of the moving table (WTB) on the surface plate Based on the detection results of the position information measurement unit (12) for measuring information, the deformation amount detection unit (45) for detecting the amount of deformation of at least one of the surface plate and the moving table, and the detection result of the deformation amount detection unit
  • a stage apparatus includes a correction unit (92) that corrects the measurement result of the information measurement unit.
  • an exposure apparatus that drives the substrate (W) using the stage apparatus described above.
  • This exposure apparatus can move the substrate precisely.
  • the position information measuring unit (12) measures the position information of the moving table (WTB) on the surface plate (31), and the surface plate and the moving table.
  • Coordinate correction comprising a step of calculating a quantitative force distortion data ( ⁇ ) related to the deformation of the image and a step of correcting the position information measured by the position information measurement unit based on the distortion data by the correction unit (92).
  • the fourth aspect of the present invention there is provided a device manufacturing method using the exposure apparatus described above.
  • this device manufacturing method it is possible to manufacture a device with higher accuracy.
  • FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to an embodiment.
  • FIG. 2 is a perspective view showing a wafer stage system of the exposure apparatus.
  • FIG. 3 is a rear view of a wafer table to which a strain gauge is attached.
  • FIG. 4 is an electrical block surface provided on the wafer table.
  • FIG. 5 is a plan view of the wafer table as viewed from above.
  • FIG. 6 is a diagram showing a method for measuring the surface shape (irregularity, inclination) of the reflecting surface.
  • FIG. 7 is a diagram showing a method for measuring the surface shape (irregularity, inclination) of another reflecting surface.
  • FIG. 8 is a diagram showing calculation of the surface shape of the reflecting surface.
  • FIG. 9 is a diagram showing a method for calculating distortion data.
  • FIG. 10 is a flowchart of calculation of surface shape and distortion data of a reflecting surface.
  • FIG. 11 is a flowchart showing an example of a semiconductor device manufacturing process.
  • the present invention is applied to a batch exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a scanning stepper.
  • FIG. 1 is a block diagram of each functional unit constituting the exposure apparatus.
  • the chamber for housing the exposure device is omitted.
  • Laser light source consisting of KrF excimer laser (wavelength 248nm) or ArF excimer laser (wavelength 193nm) as light source for exposure 1 Is used.
  • As a light source for the exposure other F lasers (wavelength 157nm)
  • High-harmonic laser light in the vacuum ultraviolet region obtained by converting the wavelength of near-infrared laser light from a solid-state laser light source (such as YAG or semiconductor laser) that emits ultraviolet laser light at such an oscillation stage
  • a solid-state laser light source such as YAG or semiconductor laser
  • Mercury discharge lamps that are often used in this type of exposure equipment can also be used. That is, as the exposure light, for example, bright ultraviolet rays (g-line, h-line, i-line) emitted from mercury lamp force and far ultraviolet light (DU V light) such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193nm) and F laser light (wavelength 157nm)
  • VUV light Sky ultraviolet light
  • Illumination light (exposure light) IL from a laser light source 1 includes a homogenizing optical system 2 composed of a lens system and a fly-eye lens system, a beam splitter 3, a variable dimmer 4 for adjusting light quantity, and a mirror. 5, and the reticle blind 7 is irradiated with a uniform illumination distribution through the relay lens system 6.
  • Illumination light IL limited to a predetermined shape by the reticle blind 7 (for example, a square shape for the batch exposure type, for example, a slit shape for the scanning exposure type) is irradiated onto the reticle R as a mask via the imaging lens system 8, An image of the opening of the reticle blind 7 is formed on the reticle R.
  • An illumination optical system 9 is configured including a uniforming optical system 2, a beam splitter 3, a variable dimmer 4 for adjusting light quantity, a mirror 5, a relay lens system 6, a reticle blind 7, and an imaging lens system 8. Yes.
  • the image of the portion irradiated by the illumination light is projected on the substrate (sensitive) via the projection optical system PL, which is telecentric on both sides and has a projection magnification of
  • An image is projected onto a wafer W coated with a photoresist as a substrate or a photoreceptor.
  • the projection optical system PL is a refractive system, but a catadioptric system can also be used.
  • glass substrates for liquid crystals, ceramic substrates for magnetic heads, etc. can be applied.
  • the projection exposure apparatus of this example is a scanning exposure type
  • the direction along the Y axis (Y direction) is the scanning direction of the reticle R and wafer W during scanning exposure
  • the illumination area on the reticle R is The shape is elongated in the non-scanning direction along the X axis (X direction).
  • Reticle R arranged on the object plane side of projection optical system PL is reticle stage RST (mass mask).
  • the stage is held by vacuum suction or the like.
  • Reciprocal coordinate position of reticle stage RST (X-direction, Y-direction position and rotation angle around Z-axis) is set on reticle moving mirror Mr fixed on reticle stage RST and the upper side of projection optical system PL.
  • Sequential measurement is performed by a fixed reference mirror (not shown) and a reticle laser interferometer system 10 disposed opposite to the reference mirror.
  • the reticle laser interferometer system 10 actually constitutes a three-axis laser interferometer having at least one axis in the X direction and two axes in the Y direction.
  • reticle stage RST movement of reticle stage RST is performed by reticle drive system 11 configured by a linear motor, a fine movement actuator, or the like.
  • Measurement information of the reticle laser interferometer system 10 is supplied to the stage control unit 14, which in turn controls the measurement information and control information (input) from the main control system 20 comprising a computer that controls the overall operation of the apparatus.
  • the operation of the reticle driving system 11 is controlled based on the information.
  • Wafer W arranged on the image plane side of projection optical system PL is held on wafer stage WST (movable stage) by vacuum suction or the like.
  • Wafer stage WST has a wafer table WTB that holds wafer W by suction (details will be described later), a focus position (position in the Z direction) of wafer W, and a Z-level for controlling the tilt angle around X and Y axes. And a bellowing mechanism (described later in detail).
  • wafer stage WST moves in steps in the X and Y directions on the guide surface.
  • the wafer stage WST is placed on the guide surface so that it can move at a constant speed in the Y direction and can move stepwise in the X and Y directions at the time of scanning exposure.
  • Wafer stage WST movement coordinate position (X direction, Y direction position, and rotation angle around Z axis) is fixed to the reference mirror M f fixed at the bottom of projection optical system PL, and fixed to wafer stage WST Sequential measurement is performed by the movable mirror Mw and the laser interferometer system 12 disposed opposite thereto.
  • the moving mirror Mw, the reference mirror Mf, and the laser interferometer system 12 actually constitute at least a three-axis laser interferometer with two axes in the X direction and one axis in the Y direction.
  • the laser interferometer system 12 actually includes a two-axis laser interferometer for measuring rotation angles (chowing and pitching) around the X axis and the main axis.
  • movement of wafer stage WST is performed by linear motor and voice coil mode. This is performed by a drive system 13 composed of an actuator such as a VCM (VCM).
  • VCM VCM
  • the measurement information of the laser interferometer system 12 is supplied to the stage control unit 14, and the stage control unit 14 determines the drive system 13 based on the measurement information and control information (input information) from the main control system 20. Control the behavior.
  • Multi-point autofocus sensors 23A, 23B of the oblique incidence type are fixed to the lower side surface of the projection optical system PL.
  • the stage control unit 14 calculates the defocus amount from the image plane of the projection optical system PL at the plurality of measurement points using the information on the lateral shift amount of the slit image, and these defocus amounts are set to predetermined values during exposure.
  • the Z leveling mechanism in the wafer stage WST is driven by the autofocus method so that it is within the control accuracy.
  • the stage control unit 14 includes a reticle-side control circuit that optimally controls the reticle drive system 11 based on measurement information from the reticle laser interferometer system 10, and measurement information from the laser interferometer system 12. And a wafer-side control circuit that optimally controls the wafer drive system 13.
  • the projection exposure apparatus of this example is a scanning exposure type
  • both control circuits cooperatively control the drive systems 11 and 13.
  • the main control system 20 exchanges commands and parameters with each control circuit in the stage control unit 14 and executes an optimum exposure process according to a program designated by the operator.
  • an operation panel unit (not shown) (including an input device and a display device) that provides an interface between the operator and the main control system 20 is provided.
  • the projection exposure apparatus in FIG. 1 includes a reticle alignment system (RA system) 21 for setting the reticle R at a predetermined position, and an off-facing alignment system 22 for detecting marks on the wafer W. It is provided!
  • RA system reticle alignment system
  • the reticle stage RST and UE, and stage WST are moved synchronously in the ⁇ direction using the projection magnification ⁇ of the projection optical system PL as the speed ratio (synchronous scanning).
  • the pattern image of reticle R is transferred to the shot area by the scanning exposure operation.
  • the irradiation of the illumination light IL is stopped, and the step 'and' scan method is performed by repeating the operation of moving the wafer W stepwise in the X and ⁇ directions via the wafer stage WST and the above scanning exposure operation.
  • the pattern image of reticle R is transferred to all shot areas on wafer W.
  • Fig. 2 shows the wafer stage system of the projection exposure apparatus of this example.
  • a flat surface plate 31 base member on the floor FL (installation surface) in a clean room of a semiconductor device manufacturing factory. Is installed via a vibration isolator (not shown).
  • the upper surface of the wafer surface plate 31 is a guide surface 31a finished with high flatness, and the guide surface 31a is perpendicular to the axis and substantially parallel to the horizontal plane.
  • Wafer stage WST is mounted on guide surface 31a so as to be movable in the X and Y directions via an air bearing.
  • Wafer stage WST is a wafer table WTB that holds wafer W (object) by suction, and a Z-leveling that controls the position of wafer table WTB in the Z direction and the tilt angle (chowing and pitching) around the X and Y axes.
  • Mechanism 55 a Y-axis guide 33Y that is substantially parallel to the Y-axis is disposed above the guide surface 31a so as to be movable in the X-direction, and is substantially parallel to the X-axis so that it can be moved in the Y-direction above the Y-axis guide 33Y.
  • Axis guide 33X is installed.
  • the Y-axis guide 33Y and the X-axis guide 33X are substantially perpendicular to each other.
  • a cylindrical Y-axis slider 39 is mounted so as to be movable in the Y direction.
  • a cylindrical X-axis slider 40 is movable in the X direction. It is attached to.
  • the inner surfaces of the sliders 39 and 40 are in contact with the outer surfaces of the guides 33Y and 33X through air bearings (a thin gas layer such as air), so that the sliders 39 and 40 smoothly follow the guides 33Y and 33X, respectively. Can move.
  • the Z leveling mechanism 55 is connected to the sliders 39 and 40, and the wafer table WTB is placed on the Z leveling mechanism 55 in a state where the relative positional relationship with the sliders 39 and 40 can be controlled. It is placed.
  • a plurality of magnets are also arranged at a predetermined pitch in the Y direction on the inner surfaces of the stators 37YC and 37YD. Then, a pair of X-axis linear motors 44XA and 44XB as a coarse movement mechanism for driving the Y-axis guide 33Y in the X direction with respect to the guide surface 31a is obtained from the movers 36XA and 36XB and the stators 36XC and 36XD. It is configured.
  • a Z leveling mechanism 55 is connected to the sliders 39 and 40, and a wafer table WTB is mounted on the Z leveling mechanism 55 via an air bearing.
  • the wafer table WTB and the Y-axis slider 39 can control their relative positions in a non-contact manner via the X-axis actuators 53XA and 53XB consisting of a voice coil motor and the X-axis actuator 54X consisting of an EI core system, respectively.
  • the wafer table WTB and the X-axis slider 40 are positioned in a non-contact manner via a Y-axis actuator 53YA, 53 YB consisting of a voice coil motor and a Y-axis actuator 54Y consisting of an EI core system, respectively. Connected in a controllable state.
  • the coil portion that receives power supply is on the X-axis slider 40 or Y-axis slider 39 side. Arranged (so-called moving damagnet system). Therefore, it is not necessary to connect wiring for supplying power (power line, etc.) and piping for refrigerant necessary for cooling the coil to wafer table WTB.
  • the average positions of the wafer table WTB with respect to the sliders 39 and 40 in the X direction and the Y direction are controlled by the actuators 54X and 54Y. Fine adjustment of the position of the wafer table WTB in the X direction and fine adjustment of the rotation angle around the Z axis are performed by the average value and balance of thrust in the X direction of the actuators 53XA and 53XB. Fine adjustment of the Y-direction position of the wafer table WTB is performed by the average value of the 53YB Y-direction thrust.
  • the actuator 53XA, 54X, 53XB, 53Y A, 54Y, and 53YB are fine movements that drive the wafer table WTB (wafer W) relative to the sliders 39 and 40 within a specified narrow range in the X, Y, and z axis rotation directions. It can be regarded as a mechanism.
  • the mirror surface of the wafer table WTB in the X direction is irradiated with two laser beams separated from the laser interferometer 12X in the Y direction, and the mirror surface of the wafer table WTB in the ⁇ Y direction is irradiated.
  • the laser side is irradiated with a laser beam from the laser interferometer 12Y, and the X and Y coordinates of the wafer table WTB and the rotation angle around the Z axis are measured by the laser interferometers 12X and 12Y.
  • the laser interferometers 12X and 12Y correspond to the laser interferometer system 12 in FIG.
  • Linear motors 44XA, 44XB, 44YA, 44YB (coarse movement mechanism) and actuators 53XA, 54X, 53XB, 53YA, 54Y, 53YB (fine movement mechanism) correspond to the drive system 13 in FIG.
  • the stage control unit 14 in FIG. 1 drives the coarse movement mechanism and the fine movement mechanism.
  • the former coarse movement mechanism can be used for the step movement of the wafer table WTB in the batch exposure type and the scanning exposure type, and can also be used for the constant speed movement of the wafer table WTB during synchronous scanning in the scanning exposure type.
  • the latter fine movement mechanism can be used to correct the positioning error of the wafer table WT B in the batch exposure type and the scanning exposure type, and further used to correct the synchronization error of the wafer table WTB during the scanning exposure in the scanning exposure type. it can.
  • FIG. 3 shows the back surface of the wafer table WTB.
  • FIG. 3 does not show the surfaces that contact the air bearings of the actuator 54X, the actuator 54Y, and the heel leveling mechanism 55 described in FIG.
  • the material of wafer table WT ⁇ (table part) is made of a material that is difficult to deform and lightweight and has a high specific rigidity (a value obtained by dividing the rigidity by the weight applied to the unit volume).
  • the material of the wafer table WTB includes ceramics as an example. Since the value measured by the laser interferometer system 12 differs if it expands during exposure, ceramics with a low expansion coefficient, such as glass ceramics, are preferred.
  • the wafer table WTB (table part) is made as thin as possible and is reinforced with a plurality of ribs extending in the X direction and the heel direction in order to reduce the weight.
  • nine block chambers 42 are formed by ribs extending in the X and Y directions.
  • a deformation amount detection sensor for detecting minute expansion / contraction generated in the wafer table WTB is attached.
  • a strain gauge 45 strain gauge
  • three uniaxial strain gauges 45 are attached in order to detect the strain amount Sm in the X direction, the heel direction, and the heel direction.
  • strain gauge there are cross type that can measure two axes perpendicular to one strain gauge, rosette type that can measure two perpendicular directions and the middle axis, etc.
  • the number of strain gauges 45 to be attached can be changed. In order to detect in detail the minute expansion / contraction generated on the wafer table WTB, it is better to attach as many strain gauges 45 as possible in the X and Y directions.
  • the wafer table WTB is formed of a material such as glass ceramic and has a small thermal expansion. However, the wafer table WTB still expands slightly during transfer exposure. The strain gauge 45 detects this excessive thermal expansion.
  • a power receiving unit 46 and a signal transmitting / receiving unit 47 are provided on the side wall of the wafer table WTB.
  • the power receiving unit 46 is composed of an electromagnetic induction coil, and specifically, an E-type core or a pot core can be applied. With this configuration, the power receiving unit 46 receives the power from the fixed-side power supply unit 48 (see FIG. 4) in a non-contact manner.
  • the signal transmitter / receiver 47 is composed of a photo coupler using infrared rays or a radio transmitter / receiver using weak radio waves.
  • the signal transmission / reception unit 47 communicates with the fixed-side signal transmission / reception unit 49 (see FIG. 4).
  • the signal transmission / reception unit can transmit and receive signals superimposed on signals using two or more types of frequency or frequency modulation using a photocoupler using infrared light or a radio wave transceiver using weak radio waves. it can .
  • the transmission apparatus according to the present invention includes, for example, a power reception unit 46, a signal transmission / reception unit 47, a power supply unit 48, and a fixed-side signal transmission / reception unit 49.
  • the position of the wafer table WTB can be controlled in a non-contact manner, thereby reducing the influence of vibration and the like from disturbance.
  • the wafer table WTB prefers to be non-contact. Therefore, the power supply line or the communication line is avoided to contact between the wafer table WTB and the outside. With the configuration with the unit 47, it is possible to supply power and signals without contact.
  • FIG. 4 is an electrical block surface provided on wafer table WTB. It consists of a fixed side main control system 20 (and a stage control unit 14, which will be described in the main control system 20 below), which is a fixed installation side, and a moving wafer table WTB, which is a separation movement side.
  • the dashed-dotted line in FIG. 4 indicates that it is in a non-contact or separated state!
  • a power supply unit 90 and a calculation unit 92 are provided in the main control system 20, a power supply unit 90 and a calculation unit 92 are provided.
  • the power supply unit 48 connected to the power supply unit 90 and attached to the slider 39 or 40 for supplying power, and the calculation unit
  • a fixed-side signal transmission / reception unit 49 connected to 92 and attached to the slider 39 or 40 is provided.
  • the fixed-side signal transmission / reception unit 49 sends a control signal to the signal transmission / reception unit 47 and further receives the detection signal of the distortion meter 45.
  • the power supply unit 90 excites commercial power supply 200V or 100V with a power transistor switch or the like at high frequency. The high frequency excited voltage is sent to the electromagnetic induction coil which is the power supply unit 48.
  • An E-type core or pot core can be used as the electromagnetic induction coil.
  • the fixed-side signal transmission / reception unit 49 is composed of a photocoupler using infrared rays or the like, or a radio wave transmitter / receiver using weak radio waves.
  • a photocoupler using infrared rays or a radio wave transmitter / receiver using weak radio waves can also transmit / receive signals with two or more types of frequencies or frequency modulation, with signals superimposed.
  • the power supply unit 48 and the fixed-side signal transmission / reception unit 49, and the power reception unit 46 and the signal transmission / reception unit 47 are used in common, so that the power supply unit coil and the signal transmission / reception coil Let's share it with both.
  • the wafer table WTB is provided with a power receiving unit 46 that is an electromagnetic induction coil as a power source that inputs to the strain gauge 45 and a power source that drives the signal transmitting / receiving unit 47. Since the primary side (power supply unit 48) of the transmission device is excited at high frequency by a rectangular wave (or sine wave) inverter, a rectangular wave (corresponding to the primary to secondary winding ratio ( Or a sine wave) voltage force occurs on the secondary side (power receiving unit 46). The high frequency of the electromagnetic induction coil force that is the power receiving unit 46 is rectified by the rectifier circuit in the control unit 94 and becomes a DC voltage through the power switch etc., and a DC voltage of 1V to 5V is input to the input terminal of the Wheatstone bridge circuit 96 Is done.
  • a power receiving unit 46 that is an electromagnetic induction coil as a power source that inputs to the strain gauge 45 and a power source that drives the signal transmitting / receiving unit 47. Since the primary side (power supply unit 48) of the transmission device is excited at
  • the rectified DC voltage also serves as an input power source for the signal transmission / reception unit 47.
  • a strain meter 45 is connected to the Wheatstone bridge circuit 96, and an output (strain amount Sm) corresponding to the change in resistance is obtained. It is ejected.
  • the extracted output is sent from the signal transmission / reception unit 47 to the fixed-side signal transmission / reception unit 49, and the correction data in the calculation unit 92 calculates the distortion data of the wafer table WTB (a value obtained by calculating a plurality of distortion amounts Sm force). Is done.
  • a correction unit may be provided in the wafer table WTB, and the calculated distortion data may be sent from the signal transmission / reception unit 47 to the fixed-side signal transmission / reception unit 49.
  • the control unit 94 applies an input voltage to the Wheatstone bridge circuit 96 according to the sampling period. Sampling may be performed every time the wafer W is transferred and exposed, or may be sampled many times during the transfer exposure of the wafer W. Conventionally, the process of measuring and correcting the surface shape (irregularity) of the movable mirror (reflective surface) for each lot (several tens) was performed, but the process itself is no longer necessary, and a single wafer is used. The amount of distortion of the wafer table WTB can be measured at every transfer exposure (each shot exposure), and the surface shape of the movable mirror (reflecting surface) can be grasped. Therefore, the position accuracy of Ueno and W can be improved more than ever.
  • FIG. 5 is a plan view of a wafer table WTB that can move while holding the wafer W as viewed from above.
  • the actuator is not shown.
  • reflection surfaces Mw (MwX, MwY) are arranged at two mutually perpendicular edges of a wafer table WTB having a rectangular shape in plan view.
  • the position of the laser interferometer 12Y is changed to be opposite to the position shown in FIG. 2 across the wafer table WTB.
  • a reference member 300 is arranged at a predetermined position outside the wafer W on the wafer table WTB.
  • the reference member 300 is provided with a reference mark PFM detected by the alignment system 22 and a reference mark MFM detected by the reticle alignment system 21 in a predetermined positional relationship.
  • the upper surface 301A of the reference member 300 is a substantially flat surface, and is provided on the wafer W surface held by the wafer table WTB and at substantially the same height (level) as the upper surface of the wafer table WTB.
  • the upper surface 301A of the reference member 300 can also serve as a reference surface for a focus detection system (for example, autofocus sensors 23A and 23B).
  • the alignment system 22 also detects alignment marks formed on Ueno and W. As shown in FIG. 5, a plurality of shot areas S1 to S24 are formed on the wafer W, and a plurality of alignment marks are provided on the wafer W corresponding to the plurality of shot areas S1 to S24.
  • an illuminance unevenness sensor 400 is disposed as a measurement sensor at a predetermined position outside the wafer W.
  • the illuminance unevenness sensor 400 includes an upper plate 401 having a rectangular shape in plan view.
  • the upper surface 401A of the upper plate 401 is a substantially flat surface, and is provided on the surface of the wafer W held on the wafer table WTB and substantially the same height (level) as the upper surface of the wafer table WTB.
  • an aerial image measurement sensor 500 is provided at a predetermined position outside the wafer W on the wafer table WTB.
  • the aerial image measurement sensor 500 includes an upper plate 5001 having a rectangular shape in plan view.
  • the upper surface 501A of the upper plate 501 is a substantially flat surface, and is provided on the surface of the wafer W held on the wafer table WTB and substantially the same height (level) as the upper surface of the wafer table WTB.
  • an irradiation sensor (illuminance sensor) is also provided on the wafer table WTB, and the upper surface of the upper plate of the irradiation sensor is a wafer W held on the wafer table WTB.
  • the surface and the wafer table WTB are almost the same height (level) as the top surface of the WTB.
  • Each of the X-side end and the + Y-side end of the wafer table WTB having a rectangular shape in plan view is formed along the Y-axis direction and is substantially perpendicular to the X-axis direction.
  • a reflecting surface MwY formed along the direction and substantially perpendicular to the Y-axis direction is provided.
  • a laser interferometer 12X constituting the laser interferometer system 12 is provided at a position facing the reflecting surface MwX.
  • a laser interferometer 12Y constituting the laser interferometer system 12 is provided at a position facing the reflecting surface MwY.
  • the beam BX from the laser interferometer 12X that detects the position (distance change) in the X-axis direction is projected vertically on the reflective surface MwX, and the position (distance change) in the Y-axis direction is detected on the reflective surface MwY.
  • the beam BY from the laser interferometer 12 Y is projected vertically.
  • the optical axis of the beam BX is parallel to the X-axis direction
  • the optical axis of the beam BY is parallel to the Y-axis direction, and they are orthogonal to each other (perpendicularly intersect) with the optical axis AX of the projection optical system PL. It becomes.
  • the wafer table WTB Before the first wafer W is transferred and exposed, the wafer table WTB is at a predetermined temperature and is not deformed due to thermal expansion or the like. In this state, the wafer table WTB is moved by the main control system 20 along the X-axis direction from the start position PSTE toward the intermediate position PSTM as shown in FIG. During this movement, the main control system 20 acquires data for calculating the surface shape of the reflecting surface MwY. That is, main control system 20 moves wafer table WTB from the start position PSTE to intermediate position PSTM in the ⁇ X direction while monitoring the measurement values of laser interferometers 12X and 12Y. This movement is performed in the order of acceleration after the start of movement, constant speed movement, and deceleration immediately before the end of movement. In this case, the acceleration region and the deceleration region are very small, and the velocity is almost constant.
  • the main control system 20 samples the measurement values of the laser interferometers 12Y and 12X in synchronization with the sampling timing of the measurement values of the laser interferometer 12X every predetermined number of times. Then, the surface shape (unevenness or inclination data) for calculating the surface shape of the reflective surface MwY is calculated as follows.
  • the interferometer is actually a force that measures the amount of rotation of the reflecting surfaces MwX and MwY with reference to the fixed mirror (the above-mentioned reference mirror).
  • the laser interferometer 12Y will be described as detecting the local inclination (rotation amount and bending amount) of the reflecting surface MwY as a surface shape with reference to a virtually fixed reference line RY.
  • the laser interferometer 12Y measures the measured values Y 0 1 and Y 0 2 up to the reflective surface MwY at two points on the reference line RY that are separated by SY in the X-axis direction. Measure. That is, the measured value ⁇ (X) represented by the following equation (1) is measured.
  • ⁇ ⁇ ( ⁇ ) ⁇ ⁇ 2- ⁇ ⁇ 1
  • the main control system 20 has the beam BY of the laser interferometer 12Y incident when the reflecting surface MwY is at the reference point Ox in the X-axis direction, that is, at a fixed point O on the reflecting surface MwY. It is assumed that the measurement has started from the point in time. This time is when the wafer table WTB has finished accelerating. At this time, it is assumed that the main control system 20 resets the measured values of the laser interferometer 12X and the laser interferometer 12Y to zero. The lower half of Fig. 8 shows the state of this reset visually.
  • the local rotation amount (tilt angle) ⁇ Y (x) of the movable mirror is a very small angle of about 1 to 2 seconds, and the interval SY is 10 mm, and the force is several tens of mm.
  • the angle ⁇ Y (x) can be approximated by the following equation (2).
  • ⁇ ( ⁇ ) includes an error due to the amount of bowing in addition to the unevenness caused by the inclination of the reflecting surface MwY. Therefore, it is necessary to subtract the error due to the amount of charing from the value obtained by the above equation (3).
  • the two beams BX 0 1 and BX 0 2 of the laser interferometer 12X are substantially the same point on the reflecting surface MwX. Continue to be projected on each.
  • the value of the laser interferometer 12X at the position X is the amount X of the wafer table WTB with respect to the reference point OX. ⁇ (X).
  • the measurement value X ⁇ (X) by the laser interferometer 12X corresponding to the measurement value ⁇ ⁇ ( ⁇ ) of the laser interferometer 12Y used to calculate the unevenness amount ⁇ ( ⁇ ) of the reflecting surface MwY is obtained.
  • the surface shape DY1 (X) of the reflective surface MwY is obtained by performing correction and calculation as shown in Equation (4).
  • the calculation of the above equation (4) is performed every time the data ⁇ ⁇ ( ⁇ ) and X ⁇ (X) are sampled, and the unevenness amount DY1 (X) of the reflecting surface MwY corresponding to each sampling point Is stored in the memory MRY.
  • the wafer table WTB when measuring the surface shape of the reflecting surface MwY provided substantially along the X-axis direction, the wafer table WTB is moved to a plurality of positions in the X-axis direction, and is moved to the plurality of positions. By measuring a plurality of corresponding information, the surface shape of the reflective surface MwY can be measured.
  • the laser interferometer 12Y for measuring the position information of the wafer table WTB reflects a plurality of beams substantially parallel to the Y-axis direction. By irradiating the surface MwY and receiving the reflected light from the reflective surface MwY, the main control system 20 can efficiently measure the surface shape of the reflective surface MwY based on the light reception result of the receiver.
  • the main control system 20 moves the wafer table WTB from the intermediate position PSTM to the final position PSTL while monitoring the measurement values of the laser interferometers 12X and 12Y. Move in the Y direction.
  • acceleration is performed after the start of movement, constant speed movement, and deceleration before the end of movement.
  • the acceleration region and the deceleration region are few, and most of them are constant velocity regions.
  • the surface shape of the reflective surface MwX can also be measured by the same method as the surface shape of the reflective surface MwY described above.
  • FIG. 9 it is assumed that the distortion data ⁇ in the Y direction at the point p in the X direction is obtained.
  • the broken line shows some wall surfaces and ribs of the wafer table WTB that are not deformed at all, and the solid line shows some wall surfaces and ribs of the wafer table WTB after being deformed due to thermal expansion. It is a thing.
  • the reflecting surface MwY is formed on this wall, and the beam of laser interferometer 12Y is projected.
  • Multiple (n) strain gauges 45 are affixed to the back surface of the wafer table WTB. In FIG. 9, three strain gauges 45 that detect the amount of deformation in the Y direction are depicted.
  • Each force applied to the strain gauge 45 at a predetermined position is related to strain data in the Y direction at the p point in the X direction.
  • the output signal of the strain gauge 45 that measures deformation in the Z direction also affects the strain data ⁇ .
  • the coefficient ⁇ be the effect of each strain gauge 45 on the ⁇ point.
  • the output of each strain gauge 45 is the strain amount Sm (m is an integer between 1 and ⁇ ). Then, it can be expressed by the following equation (5).
  • the coefficient Kp is obtained for each point according to the position where the strain gauge 45 is attached, the measurement direction of the strain gauge 45 (X direction, ⁇ direction or ⁇ direction), etc., by finite analysis or experimental analysis. .
  • Equation (6) The surface shape DY1 (X) of the reflective surface MwY can be found by Equation (4)! /. Therefore, if the strain data ⁇ Yp is subtracted, the current net surface shape MDY1 (X) is obtained by Equation (6). Can be requested.
  • MDYl (x) DYl (x)- ⁇ ⁇ ( ⁇ )
  • step 102 in order to investigate the state of the wafer table WTB before thermal deformation, a beam is emitted from the laser interferometers 12X and 12Y to the reflecting surface MwX or the reflecting surface MwY. Move the wafer table WTB in the X or Y direction.
  • Step 104 the surface shape of the reflective surface MwX or the reflective surface MwY is calculated from the position information acquired by the laser interferometers 12X and 12Y.
  • step 106 the first wafer of the lot is placed on the wafer table WTB, moved to below the projection optical system PL, and the pattern of the reticle R is transferred and exposed onto the wafer W.
  • step 108 power is supplied to the strain gauge 45 and the transmitting / receiving unit 47 in a non-contact manner via the power supply unit 48 and the power receiving unit 46. This power supply is always performed during transfer exposure.
  • step 110 strain data of the strain gauge is detected at every sampling cycle (for example, every transfer shot, every fixed time, or every wafer).
  • the detected distortion data is transmitted from the transmission unit to the correction unit.
  • the correction unit in the calculation unit 92 calculates distortion data from the distortion amount, and stores the distortion data in the surface shape of the reflective surface MwX or the reflective surface MwY.
  • a correction unit may be provided in the wafer table WTB, and the calculated distortion data may be sent from the signal transmission / reception unit 47 to the fixed-side signal transmission / reception unit 49.
  • step 114 the pattern of reticle R is transferred and exposed to wafer W using a value obtained by adding distortion data to the surface shape of the movable mirror.
  • the present invention is not limited to the above-described embodiment, and it is needless to say that various configurations can be employed without departing from the gist of the present invention.
  • it can be applied to the force reticle stage described for the wafer stage.
  • the strain gauge 45 may be attached to the surface plate 31 connected to the wafer table WT B. This is the force that changes the position of the laser interferometer system 12 when the surface plate 31 is deformed.
  • the moving table is configured to detect the amount of deformation of the surface plate in the Z direction, and to correct the measurement result of the position information (for example, focus position) of the moving table (wafer surface) based on the detection result.
  • a configuration in which a moving mirror is provided on the moving table in order to measure the position of the moving table in the Z direction with an interferometer may be employed.
  • an interferometer used for measuring the position in the X and Y directions described above may be used.
  • a force using a strain gauge as the deformation amount detection unit is not limited to this, and other means may be used as long as it can measure an amount related to deformation.
  • Moving mirror for reticle stage Mr may include not only a plane mirror but also a corner cube (retroreflector). Instead of fixing the moving mirror to the reticle stage, for example, the end surface (side surface) of the reticle stage. ) You can also use a reflective surface formed by mirror finishing! Further, the reticle stage may be configured to be capable of coarse and fine movement disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).
  • the laser interferometer 12 can measure the position information of the wafer W in the Z-axis, 0 X, and 0 Y directions
  • the position information in the Z-axis direction can be measured during the exposure operation of the wafer W. It is not necessary to provide focus sensors 23A and 23B. At least during the exposure operation, the position of the wafer W in the Z axis, ⁇ X and ⁇ Y directions is controlled using the measurement results of the laser interferometer 12. Also good.
  • the present invention can be applied to an exposure apparatus and an exposure method that do not use the projection optical system PL. Even when the projection optical system is not used, the exposure light is irradiated onto the wafer through an optical member such as a reticle or a lens.
  • the present invention can be applied to, for example, an immersion type exposure apparatus.
  • the immersion type exposure apparatus there is a possibility that the wafer or the wafer table holding the wafer is deformed by the influence of the weight of the liquid. Even in such a case, according to the present invention, it is possible to suppress the influence of the liquid by measuring the amount related to the deformation of the moving table.
  • the immersion exposure apparatus is disclosed in WO99Z49504 pamphlet. Further, the present invention provides an entire surface of a substrate to be exposed as disclosed in JP-A-6-124873, JP-A-10-303114, US Pat. No. 5,825,043, and the like. The present invention can also be applied to an immersion exposure apparatus that performs exposure in a state of being immersed in a liquid!
  • the substrate of each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask used in an exposure apparatus. Or reticle reticles (synthetic quartz, silicon wafers) etc. are applied.
  • a reticle (mask) R and a wafer W are stationary and a reticle-scale pattern is collectively exposed, and a step-and-repeat type projection exposure apparatus (step-and-repeat method) that sequentially moves Ueno and W in steps.
  • the present invention can also be applied to a step-and-scan type scanning exposure apparatus (scanning stepper) in which the reticle R and the wafer W are moved synchronously to scan and expose the pattern of the reticle R.
  • the exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the wafer W, and the wafer W is sequentially moved.
  • the present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of wafer stages.
  • the structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6, 549, 269 and 6, 590, 634), JP 2000-50595 8 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407.
  • the present invention may be applied to a stage device disclosed in International Publication No. 2005Z122242.
  • the substrate is held.
  • the present invention can also be applied to an exposure apparatus that includes a substrate stage and a reference member on which a reference mark is formed and a measurement stage on which various photoelectric sensors are mounted.
  • the type of exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate, but an exposure apparatus for manufacturing a liquid crystal display element or a display such as a plasma display, a thin film magnetic head It can also be widely applied to an exposure device for manufacturing an image sensor (CCD), a micromachine, a MEMS, a DNA chip, or a reticle or mask. Also, the number of wavelengths ⁇ ! ⁇ Exposure to extreme ultraviolet light (EUV light) of about lOOnm The present invention can also be applied to a projection exposure apparatus used as a light source.
  • EUV light extreme ultraviolet light
  • force using a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern 'dimming pattern) is formed on a light-transmitting substrate is used instead of this mask.
  • a predetermined light-shielding pattern or phase pattern 'dimming pattern
  • an electronic mask (variable molding mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed.
  • a DMD Digital Micro-mirror Device
  • spatial light modulator spatial light modulator
  • an exposure apparatus (lithography system) that exposes a line 'and' space pattern on a substrate by forming interference fringes on the substrate.
  • the present invention can also be applied.
  • JP-T-2004-519850 corresponding US Pat. No. 6,611,316
  • two mask patterns are combined on a substrate via a projection optical system.
  • the present invention can also be applied to an exposure apparatus that performs double exposure of one shot area on a substrate almost simultaneously by one scan exposure.
  • the exposure apparatus of the present embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy.
  • various optical systems are adjusted to achieve optical accuracy
  • various mechanical systems are adjusted to achieve mechanical accuracy
  • Adjustments are made to the system to achieve electrical accuracy.
  • Various subsystems The assembly process to the exposure system includes mechanical connections, electrical circuit wiring connections, and pneumatic circuit piping connections between the various subsystems. There must be an assembly process for each subsystem before the assembly process from the various subsystems to the exposure system! When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies for the exposure apparatus as a whole. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.
  • a micro device such as a semiconductor device is a device of a micro device.
  • Step 204 which includes substrate processing processes such as the exposure process that exposes the substrate to the substrate, the process that develops the exposed substrate, the heating (curing) and etching process of the developed substrate, the device assembly step (dicing process, bonding process, packaging process) Manufactured through the inspection step 206 and the like.
  • the stage device can constantly monitor the deformation of the surface plate, table, and Z or the moving mirror itself. For this reason, it is not necessary to measure the surface shape (unevenness) of the movable mirror for each lot (several tens). Therefore, it is possible to improve productivity without having to interrupt the transfer exposure. In addition, productivity can be improved without having to interrupt transfer exposure. In addition, if the table part, etc. is greatly deformed in the middle of the lot, the force distortion data that moves the stage while the subsequent position accuracy is poor is measured, so such a problem also occurs. Absent.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

L'invention concerne un appareil à étages présentant une surface plate, un tableau de mouvements (WTB) placé sur la plaque de surface, une partie de mesure d'informations de position destinée à mesurer les informations sur la position du tableau de mouvement (WTB), une partie (45) de détection de l'ampleur de la déformation destinée à détecter l'ampleur de la déformation d'au moins une plaque de surface et du tableau de mouvement (WTB), et une partie de correction destinée à corriger le résultat de mesure sur la base du résultat de détection de la partie (45) de détection de l'ampleur de la déformation.
PCT/JP2006/321142 2005-10-24 2006-10-24 Appareil a etages, procede de correction de coordonnees pour celui-ci, appareil d'exposition et procede de production du dispositif WO2007049603A1 (fr)

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