514983 A7 -— _B7-------- 五、發明說明（I ) [技術領域] (請先閲讀背面之注意事項再填寫本頁) 本發明係關於用來保持光罩與基板等之試料載台本體 之載台裝置，以及使用該載台裝置所保持之光罩與基板來 進行曝光處理的曝光裝置，特別是關於製造半導體積體電 路及液晶顯示器等之裝置時，適合使用於微影製程之載台 裝置及曝光裝置。 [習知技術] 以往，在半導體元件製造步驟之一的微影步驟中，使 用種種之曝光裝置，來將形成於光罩或標線片(以下，稱爲 標線片)上之電路圖案，轉印到塗有感光劑之晶圓或玻璃板 等之基板上。 例如，爲了因應近年來積體電路之高積體化所伴隨之 圖案最小線寬（元件法則）之微細化，半導體元件用之曝光 裝置，主要係使用投影光學系統將標線片之圖案縮小轉印 到晶圓上之縮小投影曝光裝置。 此縮小投影曝光裝置，主要有將標線片之圖案依序轉 印到晶圓上之複數個曝光照射區域（曝光區域）之步進重複 方式的靜止曝光型縮小投影曝光裝置(亦即，所謂之步進器 )，以及將此步進器改良，公開在特開平8- 166043號公報 中，將標線片與晶圓同步移動於1維方向，然後將標線片 圖案轉印到晶圓之各曝光照射區域上之步進掃描方式之掃 描曝光型之曝光裝置(亦即，所謂之掃描步進器）。 在這些縮小投影曝光裝置中，作爲載台裝置，有於地 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 514983 ____Β7____ 五、發明說明（>) 面上首先設置作爲裝置之基準的基準板’其上透過用以遮 斷地面震動之防震台，來搭載支撐標線片載台、晶圓載台 、以及投影光學系統（投影鏡頭）等之本體圓柱。最近之載 台裝置中，前述之防震台，多採用主動式防震台，其包含 有可以控制內壓之空氣裝置、音圈馬達等之致動器，根據 裝在本體圓柱(主框架）、例如6個加速度計之測量値來控 制前述音圈馬達等，以控制本體圓柱之震動。 然而，上述之步進器等，係在對晶圓上之曝光照射區 域進行曝光後，再反覆對其他曝光照射區域次序加以曝光 ，因此晶圓載台（步進器時）、或標線片載台與晶圓載台（掃 描步進之場合)之加速、減速運動等所產生之反作用力成爲 本體圓柱之震動原因，因此產生投影光學系與晶圓等之相 對位置之誤差，導致圖案轉印到晶圓上與設計値不同之位 置，在該位置誤差上若再包含震動成分時，即會成爲像模 糊（圖案線寬變大)等之原因。 因此，以往，上述主動式防震台，係將載台本體於平 台上移動時施加於平台之反作用力所產生之震動，使用預 先計算之裝置的參數，例如本體重心、慣性主軸、伺服增 益、非干涉區塊等，來控制本體之動態特性，以抑制上述 不適當情形。 [發明欲解決之課題] 然而，上述習知載台裝置以及曝光裝置，存在有以下 問題。 4 i紙張尺度適用中國國—家標準（CNS)A4規格（210 X 297公t ~ i V -----------^---------^9— (請先閱讀背面之注意事項再填寫本頁) 514983 A7 __ B7____ 五、發明說明（j ) 近年來，半導體元件之微細化與曝光處理之高速化要 求曰益高漲，因此強烈要求能因應此一狀態的載台裝置以 及曝光裝置。然而，即使使用預先以電腦等計算之參數來 進行控制，仍因實際値與電腦計算値之間有若干之誤差， 因此無論如何本體震動之殘留震動都比計算値來得高。 例如，以往，爲了維持投影光學系統與晶圓之光軸方 向之相對位置，會使用雷射干涉器等來測量投影光學系統 與平台之相對距離，然後根據測量結果，驅動致動器，來 使平台追隨投影光學系統(例如，在光軸方向爲Ιμιη，繞光 軸旋轉則爲lprad)。具體來說，載台移動時產生震動，如 圖8所示，平台J[如圖中2點鎖線所示地扭曲變形。接著 ，使用設在投影光學系統(或者是支撐投影光學系統之鏡筒 平台)上如3個之雷射干涉器，分別測量與平台上面位置之 間之距離，然後驅動致動器，控制平台J使得在Z方向(光 軸方向）、俯仰方向(例如，繞X軸之旋轉方向）、旋轉方向( 例如，繞Y軸之旋轉方向)成爲既定之相對位置。 進行此控制時，平台必須要有例如最少10〜30Hz左右 之頻率來追隨投影光學系統時的伺服剛性。圖9中，顯示 了投影光學系統與平台間之位置之頻率特性。如圖所示， 驅動平台時，在高頻區域中，會以對應平台之固有震動數 之頻率f進行共震。因此，即使以10〜30Hz左右之低頻區 域，進行平台追隨投影光學系統之控制，亦會於高頻出現 峰値（殘留震動），無法得到十足之剛性，而無法實施既定 之控制。 5 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公ϋ ---4---*--------------—訂---------· (請先閱讀背面之注意事項再填寫本頁) 514983 A7 ___B7___ 五、發明說明) 特別是，以往，皆採用投影光學系統與平台一體化之 構成，因此能大致進行追隨，但是近年來，卻檢討將投影 光學系統與平台分別獨立設置，以個別進行震動控制之方 式。此時，爲控制投影光學系統與晶圓等之相對位置誤差 ，必須嚴密地進行投影光學系統與平台之追隨控制。 另一方面，爲了在高頻區域時亦能獲得伺服剛性，因 此亦思考設置可亦因應高頻之致動器，但是，若組成構件 變多，即會導致裝置之大型化與成本上升，且當其中有一 個產生故障而發生事故時，亦需要花較多之時間來確認事 故之原因等。 本發明，考慮以上各點，其目的在提供一能以簡單之 構成容易地控制平台之震動的載台裝置，以及用來抑制因 平台震動所造成之投影光學系統與平台之相對位置誤差， 提高曝光精確度的曝光裝置。 [用以解決課題之手段] 爲達成上述目的，本發明採用對應圖1至圖6所示之 以下構成。 本發明之載台裝置，係使載台本體(5)在平台(6)上移動 者’其特徵在於：該平台(6)，設有隨平台(6)之震動呈聯動 震動之聯動裝置(41)。 〃因此，本發明之載台裝置，在因載台本體(5)之移動使 平台（6)產生震動時’聯動裝置(41)之震動系統即隨之震動 ，而由聯動裝置(41)吸收平台⑹之震動能量。因此，平台 !__ _____ 6 本紙張尺關家標準（CNS)A4規格咖X挪公爱） --1--------------丨 — 丨 —訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 __-- _B7 __ 五、發明說明（t ) (6)會因震動能量之減少，而得以抑制震動。此聯動裝置 (41)，最好是包含裝置在平台(6)之彈性體(42)，與連結在彈 性體(42)上之質量體(43)。此外，聯動裝置(41)之震動特性 ，最好是根據平台(6)之固有震動數，將震動系統之固有震 動數設定成大致相同。再者，藉由設置在平台（6)上發生震 動之地方附近，即能更有效果地抑制平台(6)之震動。 此外，本發明之曝光裝置，係將光罩載台(2)所保持之 光罩(R)之圖案，透過投影光學系統(PL)，曝光到基板載台 (5)所保持之基板(W)，其特徵在於：光罩載台（2)與基板載 台(5)中至少一個載台，係使用申請專利範圍第1到第5項 之載台裝置(7)。 因此，本發明之曝光裝置，可藉由抑制平台(6)之震動 ，容易地使光罩(R)與基板(W)追隨投影光學系統(PL)。是 以，能在抑制投影光學系統(PL)與光罩(R)與基板(W)間之 相對位置誤差的狀態下，實施高精密度之曝光處理，且能 透過投影光學系統(PL)，提昇所投影之圖案之對焦狀態。 [圖式之簡單說明] 圖1爲顯示本發明之實施形態，具有動態減震器之曝 光裝置的槪略構成圖。 圖2爲構成該曝光裝置之標線片載台的外觀立體圖。 圖3爲顯示在晶圓平台上防震單元之配置的部分擴大 圖。 圖4爲設有動態減震器之晶圓平台的外觀立體圖。 ____ 7 __ 本纸張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） —一 —，---------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 _B7_ 五、發明說明（4 ) 圖5爲支架上配置有動態減震器之晶圓平台的部分擴 大圖。 圖6爲顯示動態減震器之其他安裝形態的前視圖。 圖7爲顯示半導體元件之製造步驟例的流程圖。 圖8爲晶圓平台的外觀立體圖。 圖9爲投影光學系統與晶圓平台間之位置的頻率特性 圖。 [元件符號說明] ——i---r------裝 (請先閱讀背面之注意事項再填寫本頁) PL 投影光學系統 R 標線片(光罩） W 晶圓(基板） 1 曝光裝置 2 標線片載台(光罩載台） 5 晶圓載台(載台本體、基板載台） 6 晶圓平台(平台） 7 載台裝置 46 動態減震器(聯動裝置） 47 彈性體 48 質量體 [發明之實施形態] 以下，參照圖 1至圖6，說明本發明之載台裝置以及 ----訂---------. 曝光裝置之實施形態。此處，例如作爲曝光裝置，係以使 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 514983 A7 _____B7____ 五、發明說明（j ) 用掃描步進器之例來說明，該裝置係一邊同步移動標線片 與晶圓，一邊將標線片上形成之半導體元件之電路圖案轉 印到晶圓上。又，此曝光裝置中，係將本發明之載台裝置 適用於晶圓載台上。此外，於此等圖中，與圖8所示習知 例相同之構成要素係賦予相同符號，並省略其說明。 圖1所示之曝光裝置1，係槪略的由：明光學系統IU( 藉來自光源（未圖示）之曝光用照明光以均一之照度照射在 標線片(光罩)R上之矩形(或圓弧形)之照明區域），載台裝置 4(包含用來保持試料標線片R、作爲光罩載台之標線片載 台2 ’及用來支持該標線片載台2之標線片平台3)，投影 光學系統PL(將自標線片R射出之照明光投影到晶圓(基板 )W上），載台裝置7(包含用來保持晶圓w、作爲基板載台 之晶圓載台(載台本體)5，及用來支持該晶圓載台5之晶圓 平台(平台)6)，用來支撐上述之載台裝置4以及用以支持投 影光學裝置PL之反應架8所構成。又，此處係將投影學系 統PL之光軸方向設爲z方向，與此Z方向正交、標線片R 與晶圓W之同步移動方向設爲Y方向，將非同步移動方向 設爲X方向。又，將分別繞上述軸旋轉之方向設爲ΘΖ、 0 Y、0 X。 照明光學系統IU，係由反應架8上面固定之支撐圓柱 9所支撐。又，作爲曝光用照明光，係使用自超高壓水銀 燈射出之紫外線帶之亮線(g線、i線)以及KrF雷射光(波長 248nm)等之遠紫外光(DUV光），或ArF雷射光(波長193nm) 以及F2雷射光(波長I57nm)等之真空紫外光(VUV)等。 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —.---<---------------訂---------. (請先閱讀背面之注意事項再填寫本頁) 514983 A7 ___B7____ 五、發明說明（t ) 反應架8，係設置在水平安裝於地面之基座10上，在 其上部側與下部側，分別形成有向內部突出之梯部8a與 8b 0 載台裝置4中，標線片平台3，係於各角落透過防震 單元11大致水平支撐於反應架8之梯部8a上(又，圖中未 顯示紙面內側之防震單元），其中央部分，形成有標線片R 上所形成之圖案通過的開口 3a。再者，標線片平台3之材 料，可以使用金屬或陶瓷。防震單元11，爲由可調整內壓 之空氣裝置12與音圏馬達13直列配置在梯部8a上所構成 。藉此等防震材料11，透過基座10及反應架8將傳遞到 標線片平台3之微震動，絕緣至微G位準(G爲重力加速度 )° 在標線片平台3上，標線片載台2被支撐成可沿該標 線片載台3作2維移動。在標線片載台2之底部，固定有 複數個空氣軸承(空氣墊）14，藉由此等空氣軸承14，透過 數_米左右之間歇，將標線片載台2懸浮支撐在標線片平 台3上。此外，在標線片載台2之中央部分，形成有標線 片R之圖案通過之開口 2a，其與標線片平台3之開口 3a 相連通。 以下，詳細說明標線片載台2。如圖2所示，標線片 載台2具備：藉一對γ線性馬達15, 15、在標線片平台3 上於Y軸方向以一定之行程驅動之標線片粗動載台16，藉 一對X音圏馬達17X及一對Y音圈馬達17Y、在該標線片 粗動載台16上進行X、Y、θ Z方向之微小驅動之標線片 ___ 10 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) —訂---------線ΦΓ 514983 A7 __________B7_____ — 五、發明說明（°1) 微動載台18(圖1中，將上述構件顯示成一個載台）。 各Y線性馬達15，係由固定構件20(藉作爲非接觸軸 承之複數個空氣軸承(空氣墊）19，懸浮支撐於標線片平台3 上、向Y軸延伸），以及可動構件21(對應此等固定構件20 設置、藉由連接構件22固定於標線片粗動載台16上)所構 成。因此，根據動量守恆定律，對應標線片粗動載台16朝 + Y方向之移動，固定構件20即會朝一 Y方向移動。藉此 固定構件20之移動，可抵消標線片粗動載台16之移動所 產生之反作用力，且能防止重心位置之變化。 此外，固定構件20，可不設置在標線片平台3上，而 設置在反應架8上。當將固定構件20設在反應架8上時， 可以省略空氣軸承19，將固定構件20固定在反應架8上 ，透過反應架8，將因標線片粗動載台16之移動而作用於 固定構件20上之反作用力釋放至地面。 標線片粗動載台16，係固定在標線片平台3中央部所 形成之上部突出部3b之上面，並藉由一對沿Y軸方向延 伸之Y導件51，51，導引於Y軸方向。又，標線片粗動載 台16，係藉由未圖示之空氣軸承以非接觸方式支撐於Y導 件51，5卜 標線片微動載台18上，藉未圖示之真空夾具吸附保持 標線片R。於標線片微動載台18之-Y方向端部，固定有 由角隅稜鏡形成之一對Y移動鏡52a，52b，再者，於標線 片微動載台18之+ X方向端部，固定有由沿Y軸方向延伸 之平面鏡所形成之一對X移動鏡53。此外，藉對此等移動 11 —.—*---------------訂---------· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 514983 A7 ____B7 I、發明說明（/0 ) 鏡52a，52b，53照射測直長光束之3個雷射干涉器(圖中皆 未顯示)測量各移動鏡間之距離，高精度地測量標線片載台 2之X，Y，0Z方向之位置。又，作爲標線片微動載台18 之材質，可使用金屬及鋅化物或SiC所形成之陶瓷。 回到圖1，投影光學系統PL，此處係使用物體面(標線 片R)側與像面(晶圓W)側之兩方爲遠心且具有圓形投影視 野，以石英或螢石作爲光學玻璃材料之折射光學元件(透鏡 元件)所形成之1/4(或1/5)之縮小倍率的折射光學系統。因 此，當照明光照射到標線片R時，來自標線片r上之電路 圖案中，被照明光照射之部分的成像光束即射入投影光學 系統PL，該電路圖案之部分倒立像即被限制於投影光學系 統PL之像面側之圓形視野中央成狹縫狀而成像。據此， 所投影之電路圖案之部分倒立像，被縮小轉印於投影光學 系統PL之成像面所配置之晶圓W上之複數個曝光照射區 域中的一個曝光照射區域表面之光阻層。 在投影光學系統PL之鏡筒部外周.，設有與該鏡筒部 一體化之突緣23。投影光學系統PL，係以光軸方向爲Z 方向自上方插入鏡筒平台25(係透過防震單元24,大致水 平支撐於反應架8之梯部813的鑄造物所構成），且與突緣 23卡合。又，鏡筒平台25，可使用高剛性、低熱膨脹之陶 瓷材料。 突緣.23之材料，可使用低熱膨脹之材料，如殷鋼(包 含鎳36%、錳0.25%、及微量炭與其他元素之鐵所組成之 低熱膨脹合金)等。此突緣23，透過點與面與V槽之3點 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ?---<-------裝--------訂---------. (請先閱讀背面之注意事項再填寫本頁) 514983 A7 ___B7_;_ 五、發明說明（丨\ ) 將投影光學系統PL支撐於鏡筒平台25，構成所謂之活動 (kinematic)支撐構造。採用此種活動支撐構造，即能容易的 將投影光學系統PL組裝於鏡筒平台25，且對於組合架設 後之鏡筒平台25以及投影光學系統PL之震動、溫度變化 等所產生之應力，有最有效果之減輕作用。 防震單元24，係配置在鏡筒平台25之各角落(未顯示 在紙張內側之防震單元），可調整內壓之空氣裝置26與音 圏馬達27係直列配置在梯部8b上方。藉此等防震單元24 ，將透過基座10與反應架8傳到鏡筒平台25(及投影光學 系統PL)之微震動，絕緣至微G位準。 載台裝置7，係以保持晶圓W之晶圓載台5、將此晶 圓載台5支撐爲能沿XY平面進行2維方向移動之晶圓平 台6爲主體而構成。在晶圓載台5之底部，固定有複數個 非接觸型軸承之空氣軸承（空氣墊)28，藉由此等空氣軸承 28，將晶圓載台25透過例如數微米左右之空隙，懸浮支撐 在晶圓平台6上。 晶圓載台5，藉由將該晶圓載台5驅動於X軸方向之 一對線性馬達32(未顯示在晶圓載台5前方、紙面側之線性 馬達）、與將該晶圓載台5驅動於Y軸方向之一對線性馬達 33，而能在晶圓平台6上於XY2維方向移動自如。線性馬 達32之固定構件，係於晶圓載台5之Y方向之兩外側沿X 方向設置，由一對連結構件34將兩端部相互連接，而構成 矩形之框體35。線性馬達32之可動構件，係與固定構件 對向、設置在晶圓載台5之Y方向兩側面。 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------r------------I--訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 _B7____ __ 五、發明說明（/1) 此外，在構成框體35之一對連結構件34或線性馬達 32之下端部，分別設有由電樞單元形成之可動構件36，36 ，具有與此等可動構件36，36對應之磁石單元的固定構件 37，37，則沿Y方向突設於基座1〇上。藉此等可動構件36 以及固定構件37，構成所謂之移動線圏型線性馬達33，可 動構件36藉由與固定構件37間之電磁相互作用而被驅動 於Y方向。也就是說，藉此線性馬達33 ’將晶圓載台5與 框體35 —體驅動於Y方向。 此外，亦可使用如空氣軸承等使固定構件37成爲能在 基座10上移動自如之懸浮構成。此時’根據動量守恆定律 ，晶圓載台5之例如朝往+ Y方向移動所產生之反作用力 ，將使固定構件37往-Y方向移動。藉由此固定構件37 之移動，能抵消晶圓載台5之移動所產生之反作用力，且 防止重心位置之變化。 在晶圓載台5上方，透過晶圓保持具41以真空吸附等 方式固定晶圓W。又，晶圓載台5之X方向位置，以固定 在投影光學系統PL之鏡筒下方的參照鏡42爲基準，藉由 測量晶圓載台5之一部分所固定之移動鏡43之位置變化的 雷射干涉器44，以既定之分解能力、例如以0.5〜Inm左右 之分解能力即時地加以測量。又，藉由以和上述參照鏡42 、移動鏡43、雷射干涉器44大致正交配置之未圖示的參 照鏡、移動鏡、雷射干涉器，來測量晶圓載台5之Y方向 位置。又，此等雷射干涉器中，至少有一者係具有2軸以 上之測長軸的多軸干渉器，根據此等干涉器之測量値，不 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------,----------— II--訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 ____ B7 __ 五、發明說明（/ S ) 僅能求出晶圓載台5(及晶圓w)之XY位置，亦能求出0旋 轉量、以及水平量。 晶圓平台6，藉由防震單元29大致水平支撐於基座1〇 之上方。防震單元29，係將可調整內壓之空氣裝置30與 音圏馬達31，並列成對配置在基座10上。又，圖1中， 爲方便起見，係顯示將空氣裝置30及音圏馬達31直接配 置在晶圓平台6之正下方的構成，但實際上，如圖3所示 ’空氣裝置30係配置在晶圓平台6之端緣附近正下方，音 圏馬達31則係配置在由晶圓平台6之端緣延伸出之托架 40之正下方。 接著％在平面上，如圖4所示，空氣裝置30係以大致 相寺間隔配置在沿晶圓平台6之- Υ側端緣之X方向兩端 附近、及+ Υ側端緣之X方向中央附近等3個地方。同樣 的’托架40，係配置在各空氣裝置30之附近，由沿晶圓 平台6之-Υ側端緣之X方向兩端附近，分別朝向+ γ側 , 延伸’且由+ Υ側端緣之X方向中央附近朝向+ Υ側方向 延伸配置。然後，藉此等防震單元29，將透過基座10傳 遞至晶圓平台6之微震動絕緣至微G位準。 此外’本實施形態中，在上述晶圓平台6上，設有動 態減震器(聯動裝置)46。動態減震器46，係隨著晶圓平台6 之震動而聯動震動的裝置，由溶纖等之黏性衰減係數較大 之橡膠材料所形成之彈性體47，以及如鎢或鉛等比重大之 金屬、與彈性體47連結所形成之質量體48所構成，配置 在晶圓平台6之- Υ側之托架40上的2個地方，於晶圓平 __ 15 本·紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公爱1 ~ ' ——·---.------ (請先閱讀背面之注意事項再填寫本頁) 訂---------^0. 514983 A7 __B7_____ 五、發明說明（ί ¥) 台6之+ Υ側，則如圖5所示’配置在晶圓平台6之側面 、固定在X方向之兩端附近之L字狀之托架49上的2個 地方。 亦即，動態減震器46，係配置在當晶圓平台6在震動 時，震動腹部地方之角落附近。而各動態減震器46中，彈 性體47係透過托架40或49安裝在晶圓平台6，且該彈性 體47之+ Ζ側(亦即與晶圓載台5之移動面大致直交之方向 )，質量體48以既定之剛性與之相連結。 質量體48之質量，係根據對應晶圓平台6之震動模式 之模式質量來設定的。具體而言，由震動工學可知，若選 擇晶圓平台6之模式質量之5%〜10%，則可以得到有效果 之衰減，此處，設定爲模式質量之10%。若使用如鎢或鉛 等比重大之材料，則可實現質量體48之小型化。此外，組 合彈性體47以及質量體48之動態減震器46之震動系統之 固有震動數，設定爲與晶圓平台6之固有震動數大致一致 〇 此外，本曝光裝置中，分別設有用來測量上述標線片 平台3、晶圓平台6 '鏡筒平台25之Ζ方向震動的3個震 動感測器(例如加速度計，未圖示），以及用來測量ΧΥ面內 方向之震動的3個震動感測器(例如加速度計，未圖示）。 後者之震動感測器中的2個，係用來測量各平台之Υ方向 震動，剩下來之震動感測器則用來測量X方向震動(以下， 爲方便起見，稱此等震動感測器爲震動感測器群）。接著， 根據這些的震動感測器群之測量値，即能分別求得標線片 16 _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —.—----------------1---------. (請先閱讀背面之注意事項再填寫本頁) 514983 A7 _____B7___ 五、發明說明 aC) 平台3、晶圓平台6、鏡筒平台25之6個自由度(X，γ，Z， 6»X，0 Y，0Z)之震動。 進一步的，投影光學系統PL之突緣23中，於不同的 3個地方，具體來說，於對應空氣裝置30之配置的3個地 方固定有3個雷射干涉器45(圖1中，僅代表性的顯示此等 雷射干涉器中之1個）。在與各雷射干涉器45對向之鏡筒 平台25之部分，形成有開口 25a，透過這些開口 25a ,各 雷射干涉器45之用來測量Z方向長度之光線，朝著晶圓平 台6照射。在各晶圓平台6上之各測長光線之對向位置， 分別形成有反射面。 因此’根據上述3個雷射干涉器45，以突緣23爲基 準，測量晶圓平台6之3個不同點之Z位置(然而，圖1中 ，因爲只顯示晶圓載台5上之晶圓W中央之曝光照射區域 在投影光學系統PL之光軸正下方的狀態，因此，測長光 線被晶圓載台5所遮蔽）。此外，亦可以在晶圓載台5之上 方形成反射面，然後以投影光學系統PL或突緣23爲基準 ，設置用來測量此反射面上不同3點之Z方向位置之干涉 器。 此外，上述照明光學系統IU與投影光學系統PL，由 圖中未顯示之控制裝置來作統括性地控制。又，該控制裝 置，一邊監視標線片用雷射干涉器、晶圓用雷射干涉器44 、以及晶圓平台用雷射干涉器45之測量値，一邊進行以既 定速度於既定位置掃描標線片載台2及晶圓載台5的控制 。進一步的，控制裝置，根據震動感測器群之測量結果驅 17 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1 .---------------^---------. (請先閱讀背面之注意事項再填寫本頁) 514983 A7 _____B7_______ 五、發明說明（U) 動防震單兀11，24，29，主動控制標線片平台3、晶圓平台 6以及鏡筒平台25之震動。 接著，以上述方式構成之載台裝置及曝光裝置中，首 先說明載台裝置7之動作。 當晶圓載台5藉線性馬達15之驅動而移動時，防震單 元29，根據雷射干涉器44等之測量値，由控制裝置以前 饋(feed forward)方式賦予抵消隨晶圓載台5之移動所產生 之重心變化造成之影響的力量，並驅動空氣裝置30及音圏 馬達31來產生此力量。此外，因爲晶圓載台5與線性馬達 32、33之固定構件與晶圓平台6三者之間之摩擦爲零，且 晶圓平台5與固定構件37之移動方向只有些微之誤差，因 此，即使在晶圓平台6之6自由度方向殘留有些微震動時 ，亦需根據震動感測器群之測量値，對空氣裝置30及音圈 馬達31進行回饋控制，以除去上述殘留震動。 又，鏡筒平台25中，因標線片載台2、晶圓載台5之 移動產生的反作用力使固定構件17, 37移動，即使反應架 8產生微震動，亦因爲與反應架8之間裝有防震單元24， 因此在震動上係獨立的。又，即使鏡筒平台25產生微震動 ，亦能根據鏡筒平台25上所設之震動感測器群之測量値求 得6自由度方向之震動，藉回饋控制空氣裝置26及音圏馬 達27來抵消此震動，因此可將鏡筒平台25隨時維持在安 定之位置。因此，由鏡筒平台25所支撐之投影光學系統 PL，亦可以維持在安定之位置，而能達到有效防止因爲投 影光學系統PL之震動所產生之圖案轉印位置之偏移與影 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---.---.------^裝 f請先閱讀背面之沒意事項再填寫本頁} 訂---------.. 514983 A7 ______B7 _ 五、發明說明（[3) 像模糊等之發生，而達到改善曝光精確度之目的。 此處，控制裝置，爲使鏡筒平台25(亦即投影光學系 統PL)與晶圓平台6之相對位置關係同步，係根據雷射干 涉器45之測量結果，求出投影光學系統PL與晶圓平台6 之光軸方向(Z方向）、以及對光軸正交面之傾斜方向之3自 由度(Z、0 X、β Y)之位置關係，控制防震單元24, 29之驅 動，以使各方向之相對關係能在既定範圍(例如，Ζ方向爲 Ιμιη，0Χ，0 Υ爲brad)內，使晶圓平台6能追隨投影光 學系統PL。 此時，晶圓平台6，如圖8所示，因爲震動而扭曲變 形，然而，伴隨著晶圓平台6之震動，動態減震器46之震 動系統會產生共震，成爲在Z方向聯動震動。在此聯動震 動之中，因爲彈性體47之高黏性，使得晶圓平台6之震動 被衰減，而其振幅變小。此外，質量體48之質量爲晶圓平 台6之模式質量之10%，同時，因爲動態減震器46之固有 震動數與晶圓平台.6之固有震動數大致一致，因此，由於 動態減震器之聯動震動，使得如圖9之2點鏈線所示，晶 圓平台6之固有震動數之共震峰値會變小。其結果，當在 執行將晶圓平台6以10〜30Hz左右之低頻來對投影光擧系 統PL作追隨控制時所產生之殘留震動會變小。 接著，就上述構成之曝光裝置1中之曝光動作說明如 下。 使用皆未圖示之標線片顯微鏡及離軸對位感測器等進 行標線片對位、基準線之測量等之準備動作後，結束便用 19 ---*---»---------------訂---------· (請先閱讀背面之注意事項再填寫本頁> 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 514983 A7 _ _ B7_____ 五、發明說明（it ) 對位感測器之晶圓W之精準對準（EGA ; Enhance Global Alignment等），求得晶圓W上之複數個曝光照射區域之排 列座標。接著，根據對準結果，一邊監視雷射干涉器44之 測量値，一邊控制線性馬達32，33，將晶圓載台5移動至 用以使晶圓W之第1曝光照射區域曝光的掃描開始位置。 然後，透過線性馬達15, 33，開始標線片載台2與晶圓載 台5之Y方向掃描，當兩載台2, 5分別達到其目標掃描速 度時，即以曝光用照明光照射標線片R之圖案區域，開始 掃描曝光。 於此掃描曝光時，係透過線性馬達15, 33對標線片載 台2與晶圓載台5進行同步控制，以使標線片載台2之Y 方向移動速度與晶圓載台5之Y方向移動速度，維持對應 投影光學系統PL之投影倍率（1/5倍或1/4倍)之速度比。接 著，以照明光依序照明標線片R之圖案區域之不同區域， 當對所有圖案區域之照明完成時，即完成晶圓W上之第1 曝光照射之掃描曝光。據此，標線片R之圖案即透過投影 光學系統PL，縮小轉印於晶圓W上之第1曝光照射區域 〇 以此方式，結束第1曝光照射區域之掃描曝光後，透 過線性馬達32，33使晶圓載台5步進移動於X，γ方向，而 移動至用以使弟2曝光照射區域曝光之掃描開始位置。在 此步進移動時，根據用以檢測晶圓載台5之位置（晶圓w 之位置)之雷射干涉器44之測量値，即時測量晶圓載台5 之X，Y，0Z方向之位置。然後，根據此測量結果，控制 ____ 20 本紙張國家標準（CNS)A4規格（210 X 297公釐) ---- iL---„------·裝 (請先閱讀背面之注意事項再填寫本頁) 訂--------- 514983 A7 . __B7__ 五、發明說明（（） 線性馬達32, 33，來控制晶圓載台5的位置，以使晶圓載 台5之ΧΥ位置位移成爲既定狀態。此外，關於晶圓載台5 之0Ζ方向之位移，係根據此變位資訊，對標線片載台2 進行旋轉控制，以修正晶圓W側之旋轉位移誤差。之後， 與上述第1曝光照射區域同樣的，進行對第2曝光照射區 域之掃描曝光。接者’重複進行晶圓W上之曝光照射區域 之掃描曝光與用以使下1個曝光照射區域曝光的步進移動 ，將標線片R之圖案依序轉印到晶圓W上所有曝光對象之 曝光照射區域。 本實施形態之載台裝置，由於係因晶圓平台6之震動 使動態減震器46聯動震動來吸收晶圓平台6之震動能量， 因此可以控制減少在晶圓平台6之Ζ方向震動。此外，上 述實施形態中，由於係使動態減震器46之震動系統中之固 有震動數與晶圓平台6之固有震動數大致一致，因此可以 控制在晶圓平台追隨投影光學系統PL時所產生之共震之 峰値，使其變小，而很容易地得到在低頻區域中之充分的 伺服剛性。再者，本實施形態中，由於係將動態減震器46 設置在晶圓平台6產生震動處附近，因此可以有效果地抑 制晶圓平台6之震動。 而且，上述實施形態中，由於係使用透過托架40, 49 來將由彈性體47及質量體48所構成之動態減震器46裝置 在晶圓平台6之簡單構成來控制晶圓平台6之震動，因此 除了對裝置之小型化與低價格化有幫助外，萬一動態減震 器46發生故障時，亦可以容易地找出其原因，因此可以縮 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) " ' --!---.---------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 __B7_____ 五、發明說明（^°) 短修復作業所需要之時間。 此外，由於係以上述方式來抑制、消除晶圓平台6之 Z方向震動，因此本實施形態之曝光裝置，即使在晶圓平 台6上殘留震動，亦可以容易地使晶圓W追隨投影光學系 統PL，而能抑制光軸方向之晶圓W與投影光學系統PL間 之相對位置誤差。因此，本實施形態之曝光裝置，可以排 除像模糊等之產生因素而實施高精密度之曝光處理。特別 是在投影光學系統PL與平台6爲震動上獨立設置之曝光裝 置中，亦可以抑制此等相對位置誤差，而提昇曝光精度。 另外’上述貫施形態中’雖然係藉動態減震器來抑制 、消除晶圓平台6所產生之Z方向震動之構成，但亦能消 除X方向、Y方向等與光軸方向正交之方向的震動。例如 ，如圖6所示，在Y方向(水平方向)以一定間隔配置之壁 部55, 55之間，將在質量體48之Y方向兩側連結有彈性體 47, 47之動態減震器46之托架56，裝置在晶圓平台6之側 面。此時，最好是能設置使質量體48朝Y方向之移動更 爲圓滑的滾輪、或空氣滑件。以此構成，由於對晶圓平台 6之Y方向震動，亦因動態減震器46呈聯動震動，因此與 上述同樣的，可吸收晶圓平台46之震動能量來消除其震動 〇 又，上述實施形態中，雖係將本發明之載台裝置使用 於晶圓W側之載台裝置7，但對於標線片R之載台裝置4 ，亦可以安裝與標線片平台3之動態減震器46相同構成者 之東西。此時，因爲可以抑制、消除標線片平台3所產生 22 (請先閱讀背面之注意事項再填寫本頁) --------訂· 11---- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公---- 514983 A7 _____B7____ 五、發明說明（>\) 之震動，因此可以抑制標線片R與投影光學系統PL間之 相對位置誤差。 再者，上述實施形態中，雖係將本發明之載台裝置適 用於曝光裝置1，但是不限於此，除曝光裝置1外，亦可 以適用在利如轉印光罩之掃描裝置、光罩圖案之位置座標 測定裝置等之精密測定儀器。 此外，本實施形態之基板，不只是適用在半導體裝置 用之半導體晶圓W，亦可以適用在如液晶顯示裝置用之玻 璃基板、薄膜磁頭用之陶瓷晶圓、或曝光裝置使用之光罩 或標線片之原板(合成石英、矽晶圓)等。 作爲曝光裝置1，除了同步移動標線片R與晶圓W以 掃描曝光標線片R之圖案的步進掃描方式之掃描型曝光裝 置(掃描步進器；USP5,473,410)外，亦可以適用於在標線片 R與晶圓W靜止的狀態下使標線片R之圖案曝光，然後依 序步進移動晶圓W之步進重複方式的投影曝光裝置(步進 器）。 就曝光裝置1之種類而言，不只限定於在晶圓W上曝 光半導體裝置圖案之半導體裝置製造用之曝光裝置，亦可 廣泛地適用在液晶顯示元件製造用之曝光裝置，或製造薄 膜磁頭、攝像元件(CCD)或標線片等之曝光裝置。 此外，就曝光用照明光之光源而言，不僅是使用高壓 水銀燈所產生之亮線（g線(436nm)、h線(404.7nm)、i線 (365nm)、Ki:F 雷射光(248nm)、ArF 雷射光（193nm)、F2 雷射 光（157nm))等，亦可以使用如X線或電子束等之帶電粒子 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I -1 I I — — — — ---I---— --------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 __B7_ 五、發明說明（>1) 線。例如，在使用電子束時，就電子槍而言，可以使用熱 電放射型之六硼化鑭(LaB6)、钽(Ta)。此外，使用電子束時 ，可使用標線片R，亦可不使用標線片R，而直接在晶圓 上形成圖案之構成。此外，亦可以使用YAG雷射或半導體 雷射等之高頻等。 投影光學系統PL之倍率，不只是縮小系統，亦可以 使用等倍系統或放大系統。此外，就投影光學系統而言， 在使用準分子雷射等之遠紫外線時，使用石英或螢石等能 穿透遠紫外線之材料來作爲玻璃材，在使用F2雷射或X線 時，使用反射折射系統或折射系統之光學系統(標線片R亦 使用反射型者），此外，使用電子束時，就光學系統而言， 可以使用由電子透鏡與偏向器所形成之電子光學系統。此 外，電子束所通過之光路，當然必須爲真空狀態。此外， 亦能適用於不使用投影光學系統PL，而將標線片R與晶圓 W加以密接來曝光標線片R之圖案的近接型曝光裝置。 在晶圓載台5與標線片載台2上使用線性馬達(參考 USP5,623,853或USP5,528，118)時，可採用使用空氣軸承之 氣浮型或使用羅倫茲力或反作用力之磁浮型之任一型。此 外，各載台2, 5，無論是沿導件移動之型式，或不設置導 件之無導件型式者皆可。 就各載台2, 5之驅動機構而言，可以使用平面馬達來 驅動各載台2, 5，此平面馬達係爲將以2維方向配置磁鐵 之磁石單元(永久磁石)與以2維方向配置線圈之電樞單元 對向配置所產生之電磁力來進行驅動。此時，可將磁石單 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公H " •------r----------I----訂--------- (請先閱讀背面之注意事項再填寫本頁) 514983 A7 -------— _B7_____ 五、發明說明（7)) 元或電樞單元之任一方連接到載台2, 5上，將磁石單元或 電樞單兀之另一方設置到載台2, 5之移動面(基座)上。 如上述般，本發明實施形態之投影曝光裝置1，係以 保持既定之機械精度、電氣精度、光學精度之方式，組裝 包含本發明申請專利範圍所列舉之各構成要素的各種副系 統來加以製造。爲確保上述各種精度，在該組裝前後，就 各種光學系統，進行用來達成光學精度之調整，就各種機 械系統’進行用來達成機械精度之調整，就各種電氣系統 ，進行用來達成電氣精度之調整。從各種副系統到曝光裝 置之組裝步驟，包含有各種副系統相互之機械性接合、電 热電路之配線接合、氣壓回路之配管接合等。在從該各種 副系統到曝光裝置之組裝步驟前，當然有各副系統之各個 組裝步驟。在各種副系統之曝光裝置之組立製程後，進行 綜合調整，以確保曝光裝置全體之各種精度。又，曝光裝 置之製造最好是能溫度及潔淨度等受到管理之潔淨室中進 行。 半導體元件，如圖7所示，係經由下列步驟來製造。 進行元件之功能•性能設計的步驟201，根據該設計步驟 來製作標線板(光罩)的步驟202，用以製造作爲元件之基材 (晶圓、玻璃基板)的步驟203，以前述實施例之曝光裝置將； 光罩之圖案曝光在基板的步驟204，元件組裝步驟(包含切 割步驟、打線步驟、封裝步驟)205，檢查步驟206等。 [發明效果] 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) ' ^^ -------·-------^^裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁> 514983 A7 B7 五、發明說明（^f) 如以上之說明，請求項1之載台裝置，係在平台上， 設置有與平台之震動聯動之聯動裝置之構成。 據此，該載台裝置，可以吸收平台之震動能量，得到 抑制平台之震動的效果。 請求項2之載台裝置，爲聯動裝置，其包含有裝置在 平台之彈性體與與彈性體相連結之質量體之構成。 據此，該載台裝置，可使用簡單之構成來抑制平台之 震動，且對裝置之小型化與低價化有幫助，且萬一產生故 障時’可以很容易地找到其原因，得到縮短修復時間的效 果。 請求項3之載台裝置，其彈性體與質量體，係於本體 之移動面大致正交之方向，以一定之剛性來連結構成。 據此，該載台裝置，可以吸收平台之震動能量，而可 以容易地控制與載台本體之移動面大致正交之方向之平台 之震動的效果。 請求項4之載台裝置，爲前述聯動裝置係安裝在前述 平台產生振動之腹部附近。 據此’該載台裝置，能得到有效抑制平台之震動的效 果。 請求項5之載台裝置，爲聯動裝置之震動特性爲根據 平台之固有震動數所設定之構成。 據此，該載台裝置，可以控制成追隨平台時所產生之 共te之峰値變小’而可容易地得到在低頻區域內足夠之伺 服剛性的效果。 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 丨丨 . --------^--------- C請先03讀背¢之法意事读存填寫本貢) 514983 A7 B7 五、發明說明（<) 請求項6之曝光裝置，爲光罩載台與基板載台中至少 一個載台’係使用請求項丨至5中任一之載台裝置。 據此，該曝光裝置，即使在平台上殘留有震動，亦可 以使基板容易地追隨投影光學系統，而控制在光軸方向基 板與投影光學系統之相對位置誤差。因此，可以有排除影 像模糊等發生原因’而得到能實施高精度之曝光處理的效 果。 請求項7之曝光裝置，爲載台裝置與投影光學系統在 震動上獨立設置之構成。 據此’該曝光裝置，即使在載台裝置與投影光學系統 係震動上獨立設置之情形中，亦可以抑制此等之相對位置 誤差，提高曝光精度。 27 IL---.------ (請先閱讀背面之注音心事項再填寫本頁) 訂---------. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）514983 A7 --- _B7 -------- V. Description of the Invention (I) [Technical Field] (Please read the precautions on the back before filling out this page) The present invention relates to the use of The stage device of the sample stage body and the exposure device for performing exposure processing using the mask and the substrate held by the stage device, especially when manufacturing devices such as semiconductor integrated circuits and liquid crystal displays, are suitable for use in micro Stage device and exposure device for film production process. [Conventional Technology] Conventionally, in the lithography step, which is one of the semiconductor device manufacturing steps, various exposure devices are used to form a circuit pattern formed on a photomask or a reticle (hereinafter, referred to as a reticle). Transfer to substrates such as wafers or glass plates coated with photosensitizer. For example, in order to respond to the miniaturization of the minimum line width (element law) of a pattern accompanied by the high integration of integrated circuits in recent years, the exposure device for semiconductor devices mainly uses a projection optical system to reduce the pattern of the reticle. Reduced projection exposure device printed on a wafer. This reduction projection exposure device mainly includes a step-and-repeat type reduction projection exposure device that sequentially transfers the pattern of a reticle to a plurality of exposure irradiation areas (exposure areas) on a wafer in a step-and-repeat manner (that is, the so-called Stepper), and an improvement of this stepper, disclosed in Japanese Patent Application Laid-Open No. 8-166043, the reticle and the wafer are moved in a one-dimensional direction simultaneously, and then the reticle pattern is transferred to the wafer A scanning exposure type exposure device (ie, a so-called scanning stepper) of a stepwise scanning method on each exposure irradiation area. Among these reduced projection exposure devices, as a stage device, there are 3 paper sizes that are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 514983 ____ Β7 ____ 5. The description of the invention (>) is set first A reference plate, which serves as a reference for the device, is provided with a cylinder supporting a reticle stage, a wafer stage, a projection optical system (projection lens), and the like through an anti-vibration table for blocking ground vibration. Among the recent stage devices, the aforementioned anti-vibration tables mostly adopt active anti-vibration tables, which include actuators that can control the internal pressure of air devices, voice coil motors, etc., according to the cylinder (main frame) mounted on the body, such as Measurements of 6 accelerometers are used to control the aforementioned voice coil motor, etc., to control the vibration of the cylinder of the body. However, the above-mentioned steppers and the like are after exposing the exposure and irradiation areas on the wafer, and then repeatedly exposing the other exposure and irradiation areas in order. Therefore, the wafer stage (in the case of a stepper), or a reticle The reaction force generated by the acceleration and deceleration of the stage and the wafer stage (in the case of scanning step) becomes the cause of the vibration of the cylinder, so the relative position error of the projection optical system and the wafer, etc., causes the pattern to be transferred to If the position of the wafer is different from the design, if the vibration component is included in the position error, it will become a cause of blurring (the pattern line width becomes larger). Therefore, in the past, the above-mentioned active anti-vibration platform is the vibration generated by the reaction force applied to the platform when the carrier body is moved on the platform, using the parameters of the pre-calculated device, such as the center of gravity, inertia spindle, servo gain, non- Interfering with blocks, etc., to control the dynamic characteristics of the ontology to suppress the above-mentioned inappropriate situations. [Problems to be Solved by the Invention] However, the conventional stage device and exposure device described above have the following problems. 4 i paper size applies to China National Standard (CNS) A4 specification (210 X 297 male t ~ i V ----------- ^ --------- ^ 9— (Please (Please read the precautions on the back before filling this page) 514983 A7 __ B7____ 5. Description of the Invention (j) In recent years, the requirements for the miniaturization of semiconductor devices and the increase in the speed of exposure processing have increased, so it is strongly requested to be able to respond to this state. Stage device and exposure device. However, even if the parameters calculated in advance by a computer are used for control, there are still some errors between actual and computer calculations, so the residual vibration of the main body vibration is better than the calculation. For example, in the past, in order to maintain the relative position of the projection optical system and the optical axis direction of the wafer, a laser interferometer or the like is used to measure the relative distance between the projection optical system and the platform, and then the actuator is driven based on the measurement results. To make the platform follow the projection optical system (for example, 1 μm in the direction of the optical axis and lprad in rotation around the optical axis). Specifically, the stage generates vibration when the stage moves, as shown in FIG. 8 and the platform J [as shown in Figure 2 Twist as shown by the dot lock line Then, using three laser interferometers, such as three laser interferometers, provided on the projection optical system (or the lens barrel platform supporting the projection optical system), measure the distance from the upper position of the platform, and then drive the actuator. Control the platform J such that the Z direction (optical axis direction), the pitch direction (for example, the rotation direction around the X axis), and the rotation direction (for example, the rotation direction about the Y axis) become predetermined relative positions. When performing this control, the platform There must be, for example, a frequency of at least about 10 to 30 Hz to follow the servo rigidity when following the projection optical system. Figure 9 shows the frequency characteristics of the position between the projection optical system and the platform. As shown in the figure, when the platform is driven, In the frequency region, co-oscillation is performed at a frequency f corresponding to the natural vibration number of the platform. Therefore, even in a low frequency region of about 10 to 30 Hz, the control of the platform following the projection optical system will cause peaks (residuals) at high frequencies. (Vibration), can not get full rigidity, and can not implement the established control. 5 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --- 4 --- * --------------— Order --------- · (Please read the notes on the back before filling out this page) 514983 A7 ___B7___ V. Description of the invention) Especially, In the past, the projection optical system was integrated with the platform, so it can be roughly followed. However, in recent years, it has been reviewed to set the projection optical system and the platform separately to control vibration separately. At this time, it is to control the projection. The relative position error between the optical system and the wafer must be closely followed and controlled by the projection optical system and the platform. On the other hand, in order to obtain servo rigidity even in the high frequency region, it is also considered that the setting can also respond to the high frequency. Actuators, however, if the number of constituent components is increased, it will lead to an increase in the size and cost of the device, and when one of them fails and an accident occurs, it takes more time to confirm the cause of the accident. In view of the above points, the present invention aims to provide a stage device capable of easily controlling the vibration of the platform with a simple structure, and to suppress the relative position error between the projection optical system and the platform caused by the vibration of the platform, and improve Exposure device for exposure accuracy. [Means for solving the problems] To achieve the above object, the present invention adopts the following configurations corresponding to those shown in Figs. The platform device of the present invention is a person who moves the platform body (5) on the platform (6), which is characterized in that: the platform (6) is provided with a linkage device (in conjunction with the platform (6)) 41). 〃 Therefore, when the platform device of the present invention causes the platform (6) to vibrate due to the movement of the platform body (5), the vibration system of the linkage device (41) vibrates accordingly, and is absorbed by the linkage device (41) Platform vibration energy. Therefore, the platform! __ _____ 6 This paper ruler home standard (CNS) A4 size coffee X Xuanongai) --1 -------------- 丨 — 丨 —Order ---- ----- (Please read the precautions on the back before filling this page) 514983 A7 __-- _B7 __ V. Description of the invention (t) (6) The vibration will be suppressed due to the reduction of vibration energy. The linkage device (41) preferably includes an elastic body (42) installed on the platform (6) and a mass body (43) connected to the elastic body (42). In addition, the vibration characteristics of the linkage device (41) should preferably be set to approximately the same according to the natural vibration number of the platform (6). Furthermore, by arranging near the place where the vibration occurs on the platform (6), it is possible to more effectively suppress the vibration of the platform (6). In addition, the exposure device of the present invention exposes the pattern of the mask (R) held by the mask stage (2) through the projection optical system (PL) to expose the substrate (W) held by the substrate stage (5). ), Which is characterized in that at least one of the photomask stage (2) and the substrate stage (5) is a stage device (7) using the scope of claims 1 to 5. Therefore, the exposure device of the present invention can easily make the photomask (R) and the substrate (W) follow the projection optical system (PL) by suppressing the vibration of the platform (6). Therefore, it is possible to implement high-precision exposure processing while suppressing the relative position error between the projection optical system (PL), the mask (R), and the substrate (W), and to pass through the projection optical system (PL). Increase the focus of the projected pattern. [Brief description of the drawings] Fig. 1 is a schematic configuration diagram showing an exposure device having a dynamic shock absorber according to an embodiment of the present invention. FIG. 2 is an external perspective view of a reticle stage constituting the exposure apparatus. Fig. 3 is a partially enlarged view showing the configuration of the shock-proof unit on the wafer platform. FIG. 4 is an external perspective view of a wafer platform provided with a dynamic shock absorber. ____ 7 __ This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) — one —, --- order ------- -(Please read the precautions on the back before filling this page) 514983 A7 _B7_ V. Description of the invention (4) Figure 5 is an enlarged view of a part of the wafer platform equipped with a dynamic shock absorber on the bracket. FIG. 6 is a front view showing another installation form of the dynamic shock absorber. FIG. 7 is a flowchart showing an example of manufacturing steps of a semiconductor device. FIG. 8 is an external perspective view of a wafer platform. FIG. 9 is a frequency characteristic diagram of the position between the projection optical system and the wafer stage. [Description of component symbols] ——i --- r ------ installation (please read the precautions on the back before filling this page) PL projection optical system R reticle (photomask) W wafer (substrate) 1 Exposure device 2 Graticule stage (mask stage) 5 Wafer stage (stage body, substrate stage) 6 Wafer platform (platform) 7 Stage device 46 Dynamic shock absorber (linked device) 47 Elasticity Body 48 Mass Body [Embodiments of the Invention] Hereinafter, embodiments of the stage device and the ---- order ---------. Exposure device according to the present invention will be described with reference to FIGS. 1 to 6. Here, for example, as an exposure device, 8 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 514983 A7 _____B7____ V. Description of the invention (j) Use the example of a scanning stepper to explain This device moves the reticle and the wafer synchronously while transferring the circuit pattern of the semiconductor element formed on the reticle to the wafer. In addition, in this exposure apparatus, the stage apparatus of the present invention is applied to a wafer stage. In these figures, the same components as those in the conventional example shown in FIG. 8 are given the same reference numerals, and descriptions thereof are omitted. The exposure device 1 shown in FIG. 1 is a schematic rectangle: a bright optical system IU (a rectangular shape irradiated on a reticle (reticle) R with uniform illumination by exposure illumination light from a light source (not shown)) (Or arc-shaped lighting area), stage device 4 (including a reticle R for holding a sample, a reticle carrier 2 ′ as a photomask stage, and a reticle carrier 2 Reticle platform 3), projection optical system PL (projects the illumination light emitted from reticle R onto wafer (substrate) W), stage device 7 (including for holding wafer w as a substrate carrier) The wafer stage (stage body) 5 of the stage and the wafer platform (stage) 6 used to support the wafer stage 5 are used to support the above-mentioned stage device 4 and to support the response of the projection optical device PL Frame 8 is constructed. Here, the direction of the optical axis of the projection system PL is set to the z direction, which is orthogonal to the Z direction, the synchronous movement direction of the reticle R and the wafer W is set to the Y direction, and the asynchronous movement direction is set to X direction. The directions of rotation around the axes are θZ, 0 Y, and 0 X. The illumination optical system IU is supported by a support cylinder 9 fixed on the reaction frame 8. In addition, as the illumination light for exposure, bright light (g-line, i-line) and KrF laser light (wavelength 248nm) such as ultraviolet rays (DUV light), or ArF laser light, which are emitted from an ultra-high pressure mercury lamp, are used. (Wavelength 193nm) and F2 laser light (wavelength I57nm) and other vacuum ultraviolet light (VUV). 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) —.--- < --------------- Order ---------. (Please read the notes on the back before filling this page) 514983 A7 ___B7____ V. Description of the invention (t ) The reaction frame 8 is installed on the base 10 horizontally installed on the ground. On the upper side and the lower side, respectively, ladder portions 8a and 8b protruding inward are formed in the stage device 4 and the reticle platform 3 It is attached to the corner portion 8a of the reaction frame 8 through the shock-proof unit 11 at the corners (also, the shock-proof unit on the inner side of the paper is not shown in the figure), and the pattern formed on the reticule R is formed in the central part. Through the opening 3a. The material of the reticle platform 3 may be metal or ceramic. The anti-vibration unit 11 is composed of an air device 12 capable of adjusting an internal pressure and a sound motor 13 arranged in parallel on the ladder portion 8a. With this shock-proof material 11, the micro-vibration transmitted to the reticle platform 3 is transmitted through the base 10 and the reaction frame 8 to the micro-G level (G is the acceleration of gravity). On the reticle platform 3, the reticle The wafer stage 2 is supported to be movable in two dimensions along the reticle wafer stage 3. At the bottom of the reticle stage 2, a plurality of air bearings (air cushions) 14 are fixed. With the air bearings 14, the reticle stage 2 is suspended and supported on the reticle through intervals of several meters. Tablet platform 3. In addition, in the central portion of the reticle stage 2, an opening 2a through which the pattern of the reticle R passes is formed, which communicates with the opening 3a of the reticle platform 3. Hereinafter, the reticle stage 2 will be described in detail. As shown in FIG. 2, the reticle stage 2 includes: a pair of γ linear motors 15 and 15, and a reticle coarse movement stage 16 driven on the reticle stage 3 with a certain stroke in the Y-axis direction. By using a pair of X sound coil motors 17X and a pair of Y voice coil motors 17Y, the reticle coarse movement stage 16 performs minute driving in the directions of X, Y, θ and Z. 10 paper sizes Applicable to China National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) —Order --------- line ΦΓ 514983 A7 __________B7_____ — 5. Description of the invention (° 1) The micro-motion stage 18 (the above-mentioned components are shown as one stage in FIG. 1). Each Y linear motor 15 is composed of a fixed member 20 (a plurality of air bearings (air cushions) 19 as non-contact bearings are suspended on the reticle platform 3 and extended to the Y axis), and a movable member 21 (corresponding to These fixing members 20 are provided, and are fixed to the reticle coarse movement stage 16 by a connecting member 22). Therefore, according to the law of conservation of momentum, in response to the movement of the reticle coarse movement stage 16 in the + Y direction, the fixed member 20 will move in the Y direction. By this, the movement of the fixed member 20 can offset the reaction force generated by the movement of the reticle coarse movement stage 16 and can prevent the position of the center of gravity from changing. In addition, the fixing member 20 may not be provided on the reticle platform 3 but may be provided on the reaction frame 8. When the fixing member 20 is set on the reaction rack 8, the air bearing 19 can be omitted, and the fixing member 20 can be fixed on the reaction rack 8. Through the reaction rack 8, the movement of the reticle coarse movement stage 16 acts on the The reaction force on the fixing member 20 is released to the ground. The reticle coarse movement stage 16 is fixed on the upper protrusion 3b formed at the central portion of the reticle platform 3, and is guided by a pair of Y guides 51, 51 extending in the Y-axis direction. Y-axis direction. In addition, the reticle coarse moving stage 16 is non-contactly supported on the Y guide 51,5 by a non-illustrated air bearing on the reticle micro-moving stage 18, and is adsorbed by a vacuum fixture (not shown). Keep the reticle R. A pair of Y moving mirrors 52a, 52b formed by the corners is fixed to the -Y direction end of the reticle micro-movement stage 18, and the + X-direction end of the reticle micro-movement stage 18 is fixed. A pair of X moving mirrors 53 formed by plane mirrors extending in the Y-axis direction are fixed. In addition, borrow these mobile 11 —. — * --------------- Order --------- · (Please read the precautions on the back before filling this page ) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 514983 A7 ____B7 I. Description of the invention (/ 0) Mirrors 52a, 52b, 53 3 laser interferometers that illuminate straight long beams ( (Not shown in the figure) Measure the distance between each moving mirror, and measure the position of the reticle stage 2 in the X, Y, and 0Z directions with high accuracy. In addition, as the material of the reticle micro-movement stage 18, a ceramic made of metal, zinc compound, or SiC can be used. Returning to FIG. 1, the projection optical system PL uses two sides of the object surface (reticle R) side and the image surface (wafer W) side as telecentric and has a circular projection field of view. Quartz or fluorite is used as the projection optical system. Refraction optical system of 1/4 (or 1/5) reduced magnification formed by refractive optical elements (lens elements) of optical glass materials. Therefore, when the illuminating light is irradiated to the reticle R, the imaging beam from the part of the circuit pattern on the reticle r that is illuminated by the illuminating light is incident on the projection optical system PL, and a part of the inverted image of the circuit pattern is immediately The center of the circular field of view limited to the image plane side of the projection optical system PL is slit-shaped and imaged. Accordingly, a part of the inverted image of the projected circuit pattern is reduced and transferred to the photoresist layer on the surface of one of the plurality of exposure irradiation areas on the wafer W arranged on the imaging surface of the projection optical system PL. A projection 23 integrated with the lens barrel portion is provided on the outer periphery of the lens barrel portion of the projection optical system PL. The projection optical system PL is inserted into the lens barrel platform 25 from above with the optical axis direction being the Z direction (consisting of the casting through the shock-proof unit 24 and supported horizontally on the ladder portion 813 of the reaction frame 8), and the projection 23 Snap. The lens barrel stage 25 can be made of a ceramic material with high rigidity and low thermal expansion. The material of flange .23 can use materials with low thermal expansion, such as Yin Steel (a low thermal expansion alloy consisting of 36% nickel, 0.25% manganese, and trace carbon and iron of other elements). This flange 23 passes through 3 points of the point, the surface, and the V-groove. 12 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)? --- < ------- Installation -------- Order ---------. (Please read the precautions on the back before filling out this page) 514983 A7 ___ B7 _; _ V. Invention Explanation (丨 \) The projection optical system PL is supported on the lens barrel platform 25 to constitute a so-called kinematic support structure. By adopting such a movable supporting structure, the projection optical system PL can be easily assembled on the lens barrel platform 25, and the stress generated by the vibration and temperature changes of the lens barrel platform 25 and the projection optical system PL after the combination is erected The most effective mitigating effect. The anti-vibration unit 24 is disposed at each corner of the lens barrel platform 25 (the anti-vibration unit not shown on the inner side of the paper), and the air device 26 capable of adjusting the internal pressure and the acoustic motor 27 are arranged in line above the ladder portion 8b. With this, the vibration-proof unit 24 transmits the micro-vibration transmitted to the lens barrel platform 25 (and the projection optical system PL) through the base 10 and the reaction frame 8 to be insulated to the micro-G level. The stage device 7 is mainly composed of a wafer stage 5 holding a wafer W, and a wafer stage 6 that supports the wafer stage 5 so as to be capable of moving in a two-dimensional direction along the XY plane. At the bottom of the wafer stage 5, a plurality of non-contact bearing air bearings (air pads) 28 are fixed. With the air bearings 28, the wafer stage 25 is suspended and supported on the crystal through a gap of, for example, a few micrometers. Round platform 6. The wafer stage 5 is driven by a pair of linear motors 32 (not shown linear motors in front of the wafer stage 5 and on the paper surface side) of the wafer stage 5 by driving the wafer stage 5 in the X-axis direction, and driving the wafer stage 5 at One pair of linear motors 33 in the Y-axis direction can move freely in the XY 2-dimensional direction on the wafer stage 6. The fixed members of the linear motor 32 are arranged on both outer sides of the wafer stage 5 in the Y direction along the X direction, and the two ends are connected to each other by a pair of connecting members 34 to form a rectangular frame 35. The movable member of the linear motor 32 faces the fixed member and is provided on both sides of the wafer stage 5 in the Y direction. 13 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------ r ------------ I--Order ------- -(Please read the precautions on the back before filling this page) 514983 A7 _B7____ __ V. Description of the invention (/ 1) In addition, at the lower end of one of the connecting members 34 or the linear motor 32 constituting one of the frame bodies 35, respectively, set There are movable members 36, 36 formed by armature units, and fixed members 37, 37 having magnet units corresponding to these movable members 36, 36 are projected on the base 10 in the Y direction. The movable member 36 and the fixed member 37 thus constitute a so-called moving coil type linear motor 33. The movable member 36 is driven in the Y direction by an electromagnetic interaction with the fixed member 37. That is, the linear motor 33 'drives the wafer stage 5 and the frame body 35 in the Y direction. Alternatively, a fixed structure 37, such as an air bearing, may be used so that the fixing member 37 can be freely moved on the base 10. At this time 'according to the law of conservation of momentum, for example, the reaction force generated by the wafer stage 5 moving in the + Y direction will move the fixed member 37 in the -Y direction. By this movement of the fixed member 37, it is possible to offset the reaction force generated by the movement of the wafer stage 5, and prevent a change in the position of the center of gravity. Above the wafer stage 5, a wafer W is fixed through the wafer holder 41 by vacuum suction or the like. In addition, the X-direction position of the wafer stage 5 is based on a reference mirror 42 fixed below the lens barrel of the projection optical system PL as a reference, and a laser that measures the position change of the moving mirror 43 fixed to a part of the wafer stage 5 is used as a reference. The interferometer 44 measures immediately with a predetermined resolution, for example, a resolution of about 0.5 to Inm. In addition, the Y-direction position of the wafer stage 5 is measured by a reference mirror, a moving mirror, and a laser interferometer (not shown) arranged substantially orthogonal to the reference mirror 42, the moving mirror 43, and the laser interferometer 44. . In addition, at least one of these laser interferometers is a multi-axis interferometer with a measuring axis of more than 2 axes. According to the measurement of these interferometers, the Chinese paper standard (CNS) A4 does not apply to this paper size. Specifications (210 X 297 mm) ------, ------------ II--Order --------- (Please read the precautions on the back before filling in this (Page) 514983 A7 ____ B7 __ 5. Description of the Invention (/ S) Only the XY position of wafer stage 5 (and wafer w) can be obtained, and the amount of 0 rotation and the amount of horizontal can also be obtained. The wafer platform 6 is supported substantially horizontally above the susceptor 10 by the shock-proof unit 29. The anti-vibration unit 29 is an air device 30 and an acoustic motor 31 capable of adjusting the internal pressure, and are arranged side by side on the base 10. In addition, in FIG. 1, for the sake of convenience, the configuration is shown in which the air device 30 and the sound motor 31 are arranged directly below the wafer platform 6. However, as shown in FIG. 3, the air device 30 is arranged. Directly below the edge of the wafer platform 6, the acoustic motor 31 is disposed directly below the bracket 40 extending from the edge of the wafer platform 6. Next, on the plane, as shown in FIG. 4, the air device 30 is arranged at approximately the same distance between the two ends of the X direction along the −Υ side edge of the wafer platform 6 and the X direction of the + Υ side edge. Wait for 3 places near the center. The same 'bracket 40 is arranged near each air device 30 and extends from the vicinity of the X-direction end of the -Υ side edge of the wafer platform 6 toward the + γ side, respectively, and extends from the + Υ side end. The edge near the center of the X direction extends toward the + Υ side. Then, the vibration-proof unit 29 is used to insulate the micro-vibration transmitted to the wafer platform 6 through the base 10 to the micro-G level. In addition, in this embodiment, a dynamic shock absorber (interlocking device) 46 is provided on the wafer stage 6 described above. The dynamic shock absorber 46 is a device that is vibrated in conjunction with the vibration of the wafer platform 6, an elastic body 47 formed of a rubber material having a large viscosity attenuation coefficient such as fiber dissolution, and a specific gravity such as tungsten or lead. It is composed of metal and mass body 48 formed by connecting with elastic body 47. It is arranged on the wafer platform 6 at the two sides of the bracket 40. It is flat on the wafer. National Standard (CNS) A4 Specification (210 χ 297 Public Love 1 ~ '—— · ---.------ (Please read the precautions on the back before filling this page) Order ------- -^ 0. 514983 A7 __B7_____ V. Description of the invention (ί ¥) The + side of the stage 6 is shown in FIG. 5 'L-shape arranged on the side of the wafer platform 6 and fixed near both ends in the X direction. Two places on the shape of the bracket 49. That is, the dynamic shock absorber 46 is arranged near the corner of the abdomen place when the wafer platform 6 is vibrated. In each dynamic shock absorber 46, the elastic body 47 is mounted on the wafer platform 6 through the bracket 40 or 49, and the + Z side of the elastic body 47 (that is, the direction substantially orthogonal to the moving surface of the wafer stage 5), the mass body 48 The fixed rigidity is connected to it. The mass of the mass body 48 is set according to the mode mass corresponding to the vibration mode of the wafer platform 6. Specifically, according to vibration engineering, if the mode quality of the wafer platform 6 is selected, From 5% to 10%, effective attenuation can be obtained. Here, it is set to 10% of the mode mass. If a material with a high specific gravity such as tungsten or lead is used, the mass body 48 can be miniaturized. In addition, the combination The number of natural vibrations of the vibration system of the dynamic shock absorber 46 of the elastic body 47 and the mass body 48 is set to be approximately the same as the number of natural vibrations of the wafer platform 6. In addition, the exposure device is provided with a line for measuring the above-mentioned marks. Three platform vibration sensors (e.g., accelerometer, not shown) in the Z direction of the lens platform 3, wafer platform 6 'lens barrel platform 25, and three vibration sensors for measuring in-plane direction vibration (Such as an accelerometer, not shown). Two of the latter vibration sensors are used to measure the vibration in the Υ direction of each platform, and the remaining vibration sensors are used to measure the X-direction vibration (hereinafter, for your convenience, These vibration sensors are vibration sensor groups.) Then, according to the measurement of these vibration sensor groups, the reticle 16 can be obtained separately. _ This paper size applies to China National Standard (CNS) A4. (210 X 297 mm) —.—---------------- 1 ---------. (Please read the notes on the back before filling this page) 514983 A7 _____B7___ V. Description of the invention aC) Vibration of 6 degrees of freedom (X, γ, Z, 6 »X, 0 Y, 0Z) of platform 3, wafer platform 6, lens barrel platform 25. Further, in the flange 23 of the projection optical system PL, three laser interferometers 45 are fixed at three different places, specifically, three places corresponding to the configuration of the air device 30 (in FIG. 1, only One representative of these laser interferometers is shown). Openings 25 a are formed in the portion of the lens barrel platform 25 facing each laser interferometer 45. Through these openings 25 a, the light rays of each laser interferometer 45 for measuring the length in the Z direction are directed toward the wafer platform 6. Irradiation. Reflecting surfaces are formed at the opposite positions of the length-measuring rays on each wafer platform 6 respectively. Therefore, according to the above-mentioned three laser interferometers 45 and the flange 23 as a reference, the Z positions of three different points of the wafer platform 6 are measured (however, in FIG. 1, because only the wafers on the wafer stage 5 are shown The exposure and irradiation area in the center of W is in a state directly below the optical axis of the projection optical system PL, so the length-measuring light is blocked by the wafer stage 5). In addition, it is also possible to form a reflecting surface above the wafer stage 5, and then use the projection optical system PL or the flange 23 as a reference to set an interferometer for measuring the Z-direction position of three different points on the reflecting surface. In addition, the above-mentioned illumination optical system IU and projection optical system PL are collectively controlled by a control device not shown in the figure. The control device monitors the measurement of the laser interferometer for the reticle, the laser interferometer 44 for the wafer, and the laser interferometer 45 for the wafer platform, and scans the target at a predetermined position at a predetermined speed. Control of the wafer stage 2 and the wafer stage 5. Further, the control device drives the 17 paper sizes according to the measurement results of the vibration sensor group to the Chinese National Standard (CNS) A4 (210 X 297 mm) 1 .----------- ---- ^ ---------. (Please read the precautions on the back before filling this page) 514983 A7 _____B7_______ V. Description of the invention (U) Dynamic shockproof unit 11, 24, 29, active control Vibrations of the reticle platform 3, wafer platform 6, and lens barrel platform 25. Next, among the stage apparatus and exposure apparatus configured as described above, the operation of the stage apparatus 7 will be described first. When the wafer stage 5 is moved by the drive of the linear motor 15, the anti-vibration unit 29, based on the measurement of the laser interferometer 44 and the like, gives the offset by the control device in a feed forward manner with the movement of the wafer stage 5. The force of the influence caused by the change in the center of gravity is generated, and the air device 30 and the sound motor 31 are driven to generate this force. In addition, because the friction between the fixed members of the wafer stage 5 and the linear motors 32 and 33 and the wafer platform 6 is zero, and the movement direction of the wafer platform 5 and the fixed member 37 is only slightly different, so even if When some slight vibration remains in the 6-degree-of-freedom direction of the wafer platform 6, it is also necessary to perform feedback control on the air device 30 and the voice coil motor 31 according to the measurement of the vibration sensor group to remove the above-mentioned residual vibration. In addition, in the lens barrel platform 25, the fixed members 17, 37 are moved due to the reaction force caused by the movement of the reticle stage 2 and the wafer stage 5. Even if the reaction frame 8 is slightly vibrated, it is because it is in contact with the reaction frame 8. Equipped with anti-vibration unit 24, so it is independent in vibration. In addition, even if the lens barrel platform 25 generates micro-vibration, the vibration in the 6-degree-of-freedom direction can be obtained based on the measurement of the vibration sensor group provided on the lens barrel platform 25, and the air device 26 and the sound motor 27 are controlled by feedback. To offset this vibration, the lens barrel platform 25 can be maintained in a stable position at any time. Therefore, the projection optical system PL supported by the lens barrel platform 25 can also be maintained in a stable position, which can effectively prevent the shift of the pattern transfer position and the shadow caused by the vibration of the projection optical system PL. Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) ---.---.------ ^ f Please read the unintentional matter on the back before filling in this page} Order- ------- .. 514983 A7 ______B7 _ 5. Description of the invention ([3) The occurrence of image blur, etc., to improve the accuracy of exposure. Here, the control device, in order to synchronize the relative positional relationship between the lens barrel stage 25 (that is, the projection optical system PL) and the wafer stage 6, calculates the projection optical system PL and the crystal according to the measurement result of the laser interferometer 45. The positional relationship between the optical axis direction (Z direction) of the circular platform 6 and the 3 degrees of freedom (Z, 0 X, β Y) with respect to the oblique direction of the orthogonal plane of the optical axis controls the drive of the shockproof units 24, 29 so that The relative relationship between the directions can be within a predetermined range (for example, the Z direction is 1 μm, 0 ×, and 0 Υ is brad), so that the wafer stage 6 can follow the projection optical system PL. At this time, as shown in FIG. 8, the wafer platform 6 is distorted and deformed due to vibration. However, with the vibration of the wafer platform 6, the vibration system of the dynamic shock absorber 46 will co-oscillate and become a joint vibration in the Z direction. . In this linkage vibration, the vibration of the wafer platform 6 is attenuated due to the high viscosity of the elastic body 47, and its amplitude becomes smaller. In addition, the mass of the mass body 48 is 10% of the mode mass of the wafer platform 6. At the same time, because the natural vibration number of the dynamic shock absorber 46 is approximately the same as the natural vibration number of the wafer platform .6, The linkage vibration of the device makes the co-vibration peak 値 of the natural vibration number of the wafer platform 6 smaller as shown by the chain line at point 2 in FIG. 9. As a result, when the wafer stage 6 is subjected to the follow-up control of the projection light lifting system PL at a low frequency of about 10 to 30 Hz, the residual vibration generated is reduced. Next, the exposure operation in the exposure apparatus 1 configured as described above will be described below. Use a reticle microscope and off-axis alignment sensor (not shown) to perform the reticule alignment and measurement of the baseline, and then use 19 --- * --- »- ------------- Order --------- · (Please read the notes on the back before filling in this page> This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 514983 A7 _ _ B7_____ V. Description of the invention (it) Precise alignment of the wafer W of the registration sensor (EGA; Enhance Global Alignment, etc.), find the multiples on the wafer W The alignment coordinates of the exposure irradiation area. Then, while monitoring the measurement of the laser interferometer 44 by the alignment result, the linear motors 32 and 33 are controlled to move the wafer stage 5 to the first exposure for the wafer W Scanning start position for exposure of the irradiation area. Then, through the linear motors 15, 33, the Y-direction scanning of the reticle stage 2 and the wafer stage 5 is started, and when the two stages 2, 5 reach their target scanning speeds respectively, that is, The pattern illumination area of the reticle R is illuminated with the exposure illumination light, and the scanning exposure is started. At this scanning exposure, the linear motor 15 is passed, 33 Synchronized control of reticle stage 2 and wafer stage 5 so that the Y-direction moving speed of reticle stage 2 and the Y-direction moving speed of wafer stage 5 maintain the projection magnification corresponding to the projection optical system PL (1/5 times or 1/4 times) speed ratio. Next, different areas of the pattern area of the reticle R are sequentially illuminated with illumination light. When the illumination of all the pattern areas is completed, the wafer W is completed. Scanning exposure of the first exposure irradiation. According to this, the pattern of the reticle R is transmitted through the projection optical system PL to reduce the first exposure irradiation area transferred on the wafer W. In this way, the first exposure irradiation area is ended. After the scanning exposure, the wafer stage 5 is moved stepwise in the X and γ directions by the linear motors 32 and 33 to the scanning start position for exposing the exposure area of the exposure exposure of the brother 2. In this stepwise movement, according to The measurement of the laser interferometer 44 of the position of the wafer stage 5 (the position of the wafer w) is used to measure the position of the wafer stage 5 in the X, Y, and 0Z directions in real time. Then, based on the measurement results, control ____ 20 National Paper (CNS) A4 Specification (21 0 X 297 mm) ---- iL --- `` ------ · install (please read the precautions on the back before filling this page) Order --------- 514983 A7. __B7__ V. Description of the invention (() Linear motors 32, 33 control the position of wafer stage 5 so that the XY position displacement of wafer stage 5 becomes a predetermined state. In addition, regarding the 0Z direction displacement of wafer stage 5, the system Based on this displacement information, the reticle stage 2 is controlled for rotation to correct the rotational displacement error of the wafer W side. Thereafter, scanning exposure is performed on the second exposure irradiation area in the same manner as in the first exposure irradiation area. "The receiver 'repeats the scanning exposure of the exposure irradiation area on the wafer W and the stepwise movement for exposing the next exposure irradiation area, and sequentially transfers the pattern of the reticle R to all exposures on the wafer W The exposed area of the subject. Since the stage device of this embodiment is caused by the vibration of the wafer platform 6 to cause the dynamic shock absorber 46 to vibrate to absorb the vibration energy of the wafer platform 6, it is possible to control and reduce the vibration in the Z direction of the wafer platform 6. In addition, in the above embodiment, since the number of natural vibrations in the vibration system of the dynamic shock absorber 46 is substantially the same as the number of natural vibrations of the wafer platform 6, it is possible to control the generation of the wafer platform following the projection optical system PL The peak of the co-oscillation makes it smaller, and it is easy to obtain sufficient servo rigidity in the low frequency region. Furthermore, in this embodiment, since the dynamic shock absorber 46 is provided near the place where the wafer platform 6 generates vibrations, the vibration of the wafer platform 6 can be effectively suppressed. Furthermore, in the above-mentioned embodiment, since the dynamic shock absorber 46 composed of the elastic body 47 and the mass body 48 is mounted on the wafer platform 6 through the brackets 40 and 49, the vibration of the wafer platform 6 is controlled. Therefore, in addition to helping to miniaturize and reduce the price of the device, in the event of a failure of the dynamic shock absorber 46, the cause can be easily found, so the paper size can be reduced to 21 Chinese standards (CNS) A4 specification (210 X 297 mm) " '-! ---.--------------- Order --------- (Please read the Please fill in this page again for attention) 514983 A7 __B7_____ V. Description of the invention (^ °) Short time required for repair work. In addition, since the Z-direction vibration of the wafer platform 6 is suppressed and eliminated in the manner described above, the exposure apparatus of this embodiment can easily cause the wafer W to follow the projection optical system even if vibrations remain on the wafer platform 6. PL, and the relative position error between the wafer W in the optical axis direction and the projection optical system PL can be suppressed. Therefore, the exposure apparatus of this embodiment can perform high-precision exposure processing by eliminating factors such as image blur. Especially in the exposure device where the projection optical system PL and the stage 6 are independently set on the vibration, these relative position errors can be suppressed and the exposure accuracy can be improved. In addition, although the above-mentioned implementation form is a structure that suppresses and eliminates the Z-direction vibration generated by the wafer platform 6 by using a dynamic shock absorber, it can also eliminate X-direction, Y-direction and other directions orthogonal to the optical axis direction. Shake. For example, as shown in FIG. 6, between the wall portions 55 and 55 arranged at regular intervals in the Y direction (horizontal direction), dynamic dampers with elastic bodies 47 and 47 are connected to both sides of the mass body 48 in the Y direction. The bracket 56 of 46 is mounted on the side of the wafer platform 6. In this case, it is preferable that a roller or an air slider be provided to make the mass body 48 move more smoothly in the Y direction. With this structure, since the vibration in the Y direction of the wafer platform 6 is also linked to the dynamic shock absorber 46, the vibration energy of the wafer platform 46 can be absorbed to eliminate the vibration in the same manner as described above. In the form, although the stage device of the present invention is used as the stage device 7 on the W side of the wafer, the stage device 4 of the reticle R can also be installed with a dynamic shock absorber of the reticle platform 3. 46 things of the same composition. At this time, because the graticule platform 3 can be suppressed and eliminated 22 (Please read the precautions on the back before filling out this page) -------- Order · 11 ---- This paper size applies to China Standard (CNS) A4 specification (210 X 297 male ---- 514983 A7 _____B7____ 5.) The vibration of the invention description (> \) can suppress the relative position error between the reticle R and the projection optical system PL. Furthermore In the above embodiment, although the stage device of the present invention is applied to the exposure device 1, it is not limited to this. In addition to the exposure device 1, it can also be applied to a scanning device that facilitates the transfer of a photomask and a photomask pattern. Precision measuring instruments such as position coordinate measuring devices. In addition, the substrate of this embodiment is not only applicable to semiconductor wafers W for semiconductor devices, but also to glass substrates for liquid crystal display devices, and ceramic crystals for thin-film magnetic heads. Circle, or the original plate (synthetic quartz, silicon wafer) of the reticle or reticle used by the exposure device. As the exposure device 1, in addition to moving the reticle R and the wafer W synchronously to scan the pattern of the reticle R Step-and-scan In addition to the scanning exposure device (scanning stepper; USP5,473,410), it can also be applied to expose the pattern of the reticle R with the reticle R and the wafer W stationary, and then sequentially move the crystal Projection exposure device (stepper) of step-and-repeat method of circle W. As for the type of exposure device 1, it is not limited to an exposure device for manufacturing semiconductor devices that exposes a semiconductor device pattern on a wafer W, and can be widely used. It is suitable for an exposure device for manufacturing liquid crystal display elements, or an exposure device for manufacturing thin-film magnetic heads, imaging elements (CCD), reticles, etc. In addition, as for the light source of exposure illumination light, it is not only produced by using high-pressure mercury lamps. Bright lines (g-line (436nm), h-line (404.7nm), i-line (365nm), Ki: F laser (248nm), ArF laser (193nm), F2 laser (157nm)), etc. Use of charged particles such as X-rays or electron beams. 23 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) II -1 II — — — — --- I ---— --- ------ (Please read the notes on the back before filling this page) 514983 A7 __B7_ 1. Description of the invention (> 1) wire. For example, when using an electron beam, a thermoelectric emission type lanthanum hexaboride (LaB6) or tantalum (Ta) can be used for an electron gun. In addition, when an electron beam is used, The reticle R can be used, or the pattern can be directly formed on the wafer without using the reticle R. In addition, high frequency such as YAG laser or semiconductor laser can also be used. The magnification of the projection optical system PL, Not only the reduction system, but also a magnification system or an enlargement system. In addition, in terms of projection optical systems, when using far-ultraviolet rays such as excimer lasers, materials that can penetrate far-ultraviolet rays such as quartz or fluorite are used as glass materials. When using F2 lasers or X-rays, use The optical system of the reflective refracting system or the refracting system (the reticle R also uses a reflective type). In addition, when an electron beam is used, an electronic optical system formed by an electronic lens and a deflector can be used as far as the optical system is concerned. In addition, the light path through which the electron beam passes must of course be in a vacuum state. In addition, it can also be applied to a proximity exposure device that exposes the pattern of the reticle R by closely contacting the reticle R and the wafer W without using the projection optical system PL. When a linear motor is used for wafer stage 5 and reticle stage 2 (refer to USP 5,623,853 or USP 5,528,118), an air bearing type using air bearings or a magnetic levitation type using Lorentz force or reaction force can be used. Any of the types. In addition, each of the stages 2, 5 can be a type that moves along a guide or a type without a guide. As for the driving mechanism of each stage 2, 5, each stage 2, 5 can be driven by a planar motor, which is a magnet unit (permanent magnet) in which a magnet is arranged in a two-dimensional direction and a two-dimensional direction is used. The armature unit configured with the coil drives the electromagnetic force generated by the opposing configuration. At this time, the size of 24 sheets of magnet paper can be applied to the Chinese National Standard (CNS) A4 specification (210 X 297 male H " • ------ r ---------- I --- -Order --------- (Please read the notes on the back before filling out this page) 514983 A7 ----------- _B7_____ V. Description of the invention (7)) One side is connected to the stages 2, 5 and the other side of the magnet unit or armature unit is set on the moving surface (base) of the stages 2, 5. As described above, the projection exposure apparatus 1 according to the embodiment of the present invention is manufactured by assembling various sub-systems including the constituent elements listed in the scope of the patent application of the present invention in such a manner as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. . In order to ensure the above-mentioned various precisions, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are used to achieve electrical accuracy. Of adjustment. The assembly steps from the various sub-systems to the exposure device include mechanical joining of various sub-systems, wiring joining of electric heating circuits, and pipe joining of pneumatic circuits. Before the steps of assembling the various sub-systems to the exposure device, of course, there are respective steps of assembling the sub-systems. After the assembly process of the exposure devices of various sub-systems, comprehensive adjustments are performed to ensure various accuracy of the entire exposure device. The exposure device is preferably manufactured in a clean room where temperature and cleanliness are managed. As shown in FIG. 7, a semiconductor device is manufactured through the following steps. Step 201 of designing the function and performance of the element, step 202 of making a reticle (reticle) according to the design step, step 203 of manufacturing a substrate (wafer, glass substrate) as the element, and implementing the foregoing The exposure device of the example exposes the pattern of the photomask to the substrate in step 204, the component assembly step (including the cutting step, the wire bonding step, and the packaging step) 205, the inspection step 206, and the like. [Effects of the invention] 25 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) '^^ ------- · ------- ^^ equipment ----- --- Order --------- (Please read the notes on the back before filling out this page> 514983 A7 B7 V. Description of the invention (^ f) As stated above, request the carrier device of item 1 The platform device is provided with a linkage device that is linked to the platform vibration. According to this, the platform device can absorb the vibration energy of the platform and obtain the effect of suppressing the platform vibration. The platform device of claim 2 It is a linkage device, which includes the structure of the elastic body mounted on the platform and the mass body connected to the elastic body. According to this, the platform device can use a simple structure to suppress the vibration of the platform and reduce the size of the device. It is helpful to reduce the price, and in the event of a failure, the cause can be easily found, and the effect of shortening the repair time can be obtained. The stage device of claim 3, the elastic body and the mass body, are attached to the moving surface of the body. The substantially orthogonal direction is connected with a certain rigidity. According to this, the stage device can be The vibration energy of the platform is absorbed, and the effect of vibration of the platform in a direction substantially orthogonal to the moving surface of the stage body can be easily controlled. The stage device of claim 4 is the aforementioned linkage device which is installed on the aforementioned platform and generates vibration. Near the abdomen. According to this, the platform device can effectively suppress the vibration of the platform. The platform device of claim 5 is a linkage device whose vibration characteristics are set according to the inherent vibration number of the platform. Accordingly, This stage device can be controlled to reduce the peak value of the total te generated when the platform follows the platform, and it is easy to obtain the effect of sufficient servo rigidity in the low frequency region. 26 This paper size applies the Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 丨 丨. -------- ^ --------- C Please read 03 for the back of the law, read and save the tribute) 514983 A7 B7 5 , Invention description ( <) The exposure device of claim 6 is at least one of a photomask stage and a substrate stage ', and is a stage device using any one of claims 1-5. According to this, the exposure device can control the relative position error between the substrate and the projection optical system in the direction of the optical axis even if there is vibration on the platform, so that the substrate can easily follow the projection optical system. Therefore, it is possible to obtain an effect that it is possible to perform high-precision exposure processing by eliminating the cause of image blurring and the like. The exposure device of claim 7 has a structure in which the stage device and the projection optical system are independently provided in vibration. According to this, the exposure device can suppress such relative position errors and improve exposure accuracy even in the case where the stage device and the projection optical system are independently set on the vibration. 27 IL ---.------ (Please read the phonetic notes on the back before filling out this page) Order ---------. This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm)