WO2007043205A1

WO2007043205A1 - Irradiation unit, method of irradiation and semiconductor device

Info

Publication number: WO2007043205A1
Application number: PCT/JP2006/308543
Authority: WO
Inventors: Yoshimi Shioya
Original assignee: Yatabe Massao; Okumura Masaru; Yoshimi Shioya
Priority date: 2005-10-14
Filing date: 2006-04-24
Publication date: 2007-04-19
Also published as: JPWO2007043205A1

Abstract

[PROBLEMS] To provide a semiconductor production apparatus capable of modifying an insulating film. [MEANS FOR SOLVING PROBLEMS] Irradiation unit is provided with not only first irradiation means for irradiating an insulating film with a light of first wavelength but also second irradiation means for irradiating the insulating film with a light of second wavelength.

Description

Specification

Irradiation apparatus, irradiation method, and semiconductor device

Technical field

The present invention relates to an irradiation apparatus, an irradiation method, and a semiconductor device.

Background art

Conventionally, a semiconductor device includes various insulating films. These insulating films include an IC interlayer insulating film (for example, a low dielectric constant film (hereinafter referred to as “Low-k film”), a noria insulating film of a wiring material formed between wirings, and a high dielectric constant. Gate insulation film (hereinafter referred to as “High-k film”), etc. In addition, SiN, SiON, SiOCH, SiOCNH, SiCH, SiCNH, SiOCF, SiCF, etc. are used as the material of the insulation film .

[0003] Low-k films are required to have a low dielectric constant and high mechanical strength. One way to achieve a low dielectric constant is to perform a thermal annealing on the low-k film. One method for realizing high mechanical strength is to perform ultraviolet light irradiation treatment as described in Patent Document 1.

[0004] Specifically, the thermal annealing treatment is required to be performed at a temperature of 400 ° C or higher for 30 minutes or longer. The ultraviolet light irradiation treatment is required to irradiate ultraviolet light having a wavelength of 200 nm or less.

[0005] Also, the barrier insulating film is required to be uniform and highly dense, but there is also a demand for a thin film.

[0006] Further, the high-k film (HfO film) is dense and can cause leakage current to flow.

2

It is requested. For this reason, annealing treatment after high-k film formation is important. Conventionally, a high-k film has been formed by metal organic chemical vapor deposition (MOCVD) or the like. Specifically, prior to formation of the high-k film, heating is performed at a temperature of 425 ° C. while supplying O gas onto the silicon.

2

Form a boundary layer. Thereafter, a high-k film is formed by metalorganic chemical vapor deposition at a temperature of 450 ° C to 550 ° C. After that, at a temperature of 700 ° C to 900 ° C, N

2. By supplying N 2 / O 2 2 or NH gas, the Si—O bond silicon in the high-k film is replaced with nitrogen. Perform SiN (Nation) to form SiN bond. Further, annealing is performed in argon (Ar) (Non-patent Documents 1 and 2).

[0007] Patent Document 1: JP 2004-356508 A

Non-Patent Document 1: IEEE Electron Devices 52, pl839 (2005).

Non-Patent Document 2: The Electrochemical Society Interface, Summer 2005, p30 (2005). Disclosure of the Invention

Problems to be solved by the invention

However, when the conventional ultraviolet irradiation treatment is performed, the low-k film has a problem in that although the mechanical strength is improved, the dielectric constant is also increased. For example, when a low-k film with a dielectric constant of 2.4 is irradiated with ultraviolet light with a wavelength of 172 nm and an illuminance of 14 mWZcm ² for 2 minutes, the Young's modulus, which is the mechanical strength, becomes 8 GPa. The dielectric constant is 2.6. More than that.

[0009] In addition, spin coating that can achieve a dielectric constant of 2.3 or less by thermal annealing treatment

When (Spin on Deposition: SOD) film is irradiated with ultraviolet light with a wavelength of 172 nm and illuminance of 14 mWZcm ² for 4 minutes, the Young's modulus, which is mechanical strength, becomes 8 GPa, but the dielectric constant becomes 2.5. Increased.

[0010] Further, as described above, the thermal annealing treatment is performed at a temperature as high as 400 ° C for 30 minutes or more. For example, wiring materials such as copper (Cu) used in semiconductor devices are used. The force ow— diffuses into the k film and increases the leakage current between wires. The thermal annealing process takes more than 30 minutes, while other manufacturing processes for semiconductor devices take about 5 minutes. Therefore, when the thermal annealing process is performed, there is a problem that the manufacturing throughput of the semiconductor device is lowered.

[0011] Further, it has been difficult to make the barrier insulating film thinner and further increase its density. In the past, there has been no specific method for increasing the density of the barrier insulating film.

[0012] Further, in the case of a high-k film, there are many charges in the high-k film, which causes a problem that the source / drain current decreases and the leak current of the high-k film increases. was there. These are problems caused by vacancies caused by oxygen (O) loss in the high-k film.

As described above, the insulating film is required to be modified in accordance with its use. Therefore, an object of the present invention is to provide a semiconductor manufacturing apparatus capable of modifying an insulating film.

Means for solving the problem

In order to solve the above-described problem, the irradiation apparatus of the present invention includes a first irradiation unit that irradiates the insulating film with ultraviolet light having a first wavelength;

Second irradiating means for irradiating the insulating film with ultraviolet light or visible light having a second wavelength different from the first wavelength.

[0016] When the insulating film is a low dielectric constant film, one of the lights is light having a wavelength equal to or less than a wavelength necessary for cutting a bonding group that is not in a stable state in the insulating film, and the other of the lights Is light with a wavelength longer than the absorption edge.

[0017] When the insulating film is an inter-wiring insulating film or a barrier insulating film, one of the lights is light having a wavelength equal to or shorter than a wavelength necessary for cutting a bonding group in the insulating film. The other is light having a wavelength longer than the absorption edge.

[0018] Further, when the insulating film is a high dielectric constant gate insulating film, one of the lights is light having a wavelength less than a wavelength necessary for the transition metal oxide or a wavelength necessary for breaking the CH bond. The other of the lights is light having a wavelength longer than the absorption edge.

In addition, a semiconductor manufacturing apparatus of the present invention includes the irradiation apparatus and a transfer apparatus that transfers a wafer having the insulating film.

[0020] The first and second irradiation means may be provided in the same chamber, or may be provided in different chambers.

Furthermore, when the semiconductor device of the present invention is manufactured by a chemical vapor deposition apparatus, the semiconductor device includes an insulating film having a dielectric constant of 2.4 or less and a Young's modulus of 5 GPa or more.

[0022] When the semiconductor device of the present invention is manufactured by a semiconductor device spin coating film forming apparatus, the semiconductor device includes an insulating film having a dielectric constant of 2.3 or less and a Young's modulus of 6 GPa or more.

[0023] Further, the irradiation method of the present invention includes a first irradiation step of irradiating the insulating film with ultraviolet light having a first wavelength;

After the first irradiation step, ultraviolet light or visible light having a second wavelength different from the first wavelength And a second irradiation step of irradiating.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same part.

[Embodiment 1]

FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 1 of the present invention. In the present embodiment, an apparatus for modifying a low-k film will be mainly described.

FIG. 1 shows a hoop 41 that accommodates a wafer, a wafer alignment 42 that positions a wafer taken out from the hoop 41, and a mouth-drop chamber that is a decompression chamber having a load lock mechanism. 43, a first chamber 1 that irradiates a wafer with relatively long wavelength light, a second chamber 2 that irradiates a wafer with relatively short wavelength light, and a low-lock chamber 43 And a transfer chamber 44 having a robot arm for transferring a wafer between the first chamber 11 and the second chamber 1.

FIG. 2 is a schematic configuration diagram of the first chamber 11 in FIG. Fig. 2 shows a number of light beams with a wavelength of 300 nm or more, such as a high-pressure mercury lamp determined by the material of the low-k film, or a wavelength of 400 nm or more and 770 nm or less, such as a halogen lamp Four lamps 3, quartz pipes 4 that protect each lamp 3 from stress applied during decompression and prevent oxygen from contacting each lamp 3, and nitrogen (N ) Inert gas such as gas 5 and semiconductor device covered with an insulator

2

, A heater 6 made of an insulator (A1N) located on the elevating stage and heating the wafer 7, and a pin 8 for receiving the wafer 7 conveyed by the transfer chamber 44, Continuously, periodically, intermittently measure the illuminance of the light emitted from the lamp 3 in the quartz pipe 4 or the light receiving sensor 9 attached to the inner wall of the first chamber 1 and nitrogen in the first chamber 1 A pipe 11 for supplying gas, a pipe 12 for supplying oxygen (O) gas for cleaning the inside of the first chamber 1 after processing the wafer 7, and each of the lines

2

A nozzle 14 provided between the pipes 11 and 12 and the gas tank, and a mass flow 13 for measuring the gas flow rate through the pipes 11 and 12 and controlling the opening and closing of the valve 14 according to the measurement results are shown. Yes. If necessary, an inert gas other than nitrogen is introduced into the first chamber 11. Make it available.

[0028] The configuration of the second chamber 12 is the same as that of the first chamber 11, but a low-pressure mercury lamp or an excimer lamp such as Xe, Kr, I, KrBr is used instead of each lamp 3. Yes. The low-pressure mercury lamp has a relatively strong light with a wavelength of 186 nm when the base temperature of the lamp is around 60 ° C, and a relatively strong light with a wavelength of 254 nm when the temperature at the base of the lamp is 0 ° C. Is.

[0029] Note that a lamp for irradiating light of the same wavelength may be provided in both the first chamber 11 and the second chamber 12. In this case, the wafer 7 processed by the semiconductor manufacturing apparatus shown in FIG. 1 has a heating time twice that of the conventional one, so that the mechanical strength of the insulating film is increased. This is because an effect is obtained.

[0030] As the lamp 3 of the first chamber 11, a visible light lamp, a xenon lamp, an argon laser, or a carbon dioxide gas laser can be used. Further, an excimer laser such as XeF, XeCl, XeBr, KrF, KrCl, ArF, or ArCl can be used for the lamp in the second chamber 12. Note that the lamp 3 needs to be able to irradiate light having a wavelength of 770 nm or less, that is, visible light, in order to cut a bonding group that is not in a stable state in the insulating film. In other words, when a lamp that irradiates light in the infrared wavelength range is used as the lamp 3, vibration occurs in most of the bonding groups that are not in a stable state in the insulating film, but these are limited. It is not disconnected in time. It was confirmed by experiments that most of the bonding groups of Si—H bonds and C—H bonds can be suitably cleaved when visible light is 770 nm or less, and can be cleaved more suitably when visible light is 500 nm or less.

FIG. 3 is a diagram showing the relationship between the wavelength of irradiation light and the binding energy of a substance. The horizontal axis in Fig. 3 is the wavelength (nm), and the vertical axis is the binding energy (eV). For example, SiOCH, SiCF, etc. can be used for the low-k film material, and SiN, SiOCH, SiON, SiOC NH, SiCNH film, etc. can be used for the Cu barrier film.

[0032] For example, in the SiOCH film, there are C—H bonds and Si—CH bonds. These are 300

Three

When light having a wavelength of a little over nm is irradiated, the bonding group is cleaved. Therefore, when the SiOCH film is used as the insulating film, the bonding group can be cleaved by irradiating light with a wavelength of 350 nm or less. Similarly, the SiN film has N—H bonds and Si—H bonds. In these, the bonding group is cleaved when irradiated with light having wavelengths of about 3 OOnm and 400 nm, respectively. Therefore, when the SiN film is used as the insulating film, the above bonding group can be cleaved by irradiating light with a wavelength of 400 nm or less.

[0034] Here, the present inventor has found that the dielectric constant of the low-k film can be lowered by reducing hydrogen components, fluorine components, and the like in an unstable bonding state in the low-k film. .

Therefore, by irradiating light with a wavelength of 350 nm or less from the lamp 3, the C—H bond and the Si—CH bond in the SiOC H film can be removed. As a result, hydrogen in the SiOCH film

Three

Components and the like are reduced, and the dielectric constant of the SiOCH film is lowered.

[0036] Further, the present inventor has found that the inter-wiring insulating film and the like can be made uniform and high in density by cutting the hydrogen bonding group of the inter-wiring insulating film or the barrier insulating film. Furthermore, the present inventor irradiates the high-k film with light having a wavelength shorter than that required for the transition metal oxide or the wavelength necessary for breaking the C—H bond. UV annealing is performed in an inert gas atmosphere containing about 1 to 2%, preferably 1% or less of inert gas or O gas.

2

As a result, it was found that the high-k film can be made dense and the leakage current becomes a flow.

[0037] Therefore, if a lamp whose wavelength is selected according to the material of each of the insulating films is used, the insulating film can be modified to a state where the required conditions are cleared.

FIG. 4 is a diagram showing the relationship among the wavelength of irradiation light, the absorption edge, and the binding energy. In Fig. 4, the horizontal axis is the wavelength (nm), the left vertical axis is the absorption edge (eV), and the right vertical axis is the binding energy (eV). For example, the wavelength corresponding to the absorption edge of the SiO film is 156 nm. Therefore, the SiON film

2

When light with a wavelength of 156 nm or more is irradiated, the light enters the film, and as a result, the light is absorbed by the structure (bonding skeleton) in the film, increasing the density of the SiO film or SiON film, and mechanically. Strong

2

The degree becomes higher. Similarly, since the wavelength corresponding to the absorption edge / absorption edge of SiN is 275.6 nm, when the SiN film is irradiated with light having a wavelength of 275.6 nm or more, the density of the SiN film is improved, or a hydrogen component, etc. Is removed.

FIG. 5 is a schematic cross-sectional view of a part of the wafer 7 shown in FIG. FIG. 5 shows a wiring layer 31 for transmitting signals in the semiconductor device, and a wiring layer 31 formed on the wiring layer 31! A barrier insulating film 32 that barriers against leakage of water, and a low-k film 33 that is formed on the NORI-insulating film 32 and insulates the layer formed on the low-k film itself in a later step. Is shown.

[0040] The wiring layer 31 is made of Cu or the like, and has a thickness of about 200 to 300 nm. The barrier one insulating film 32 is selected from materials such as SiOC, SiCH, SiOCH, and SiOCNH, and has a thickness of about 20 to 30 nm. The low-k film 33 is made of SiOCH or the like and has a thickness of about 200 to 300 nm.

Next, the procedure for the modification process of the low-k film 33 will be described by taking the wafer 7 selected as the SiOCH film power low-k film 33 as an example. In the present embodiment, first, the CVD apparatus power in a clean room (not shown) is also transported while being accommodated in the hoop 41. Thereafter, the wafer is taken out from the hoop 41 and transferred to the wafer alignment 42 side.

In the wafer alignment 42, the wafer is positioned. Thereafter, the wafer 7 is transferred to the load lock chamber 43 before being transferred to the first chamber 11.

[0043] Next, the pressure in the load lock chamber 43 is reduced. When the pressure in the load lock chamber 43 reaches a desired pressure, the gate valve that partitions the load lock chamber 43 and the transfer chamber 44 is opened.

Thereafter, the wafer 7 is transferred into the transfer chamber 44. Subsequently, the wafer 7 is transferred from the load lock chamber 43 to the first chamber 11 by the robot arm in the transfer arch yanber 44.

In the first chamber 11, the wafer 7 is placed on the pins 8 protruding above the heater 6. Thereafter, the heater 6 is raised, and the wafer 7 placed on the pin 8 comes into direct contact with the heater 6. Then, prior to the irradiation of the light from the lamp 3, the wafer 7 is heated by heating at a heater 8 [thereby, f line, approximately 90 times f¾, 350-400 ° C].

[0046] Further, along with this heating, the inside of the first chamber 11 is evacuated by an evacuation means (not shown), and the valve 14 on the nitrogen gas side is opened by the mass flow 13 so that the inside of the first chamber 1 is in a nitrogen atmosphere. Become. The above heating is performed under the condition that the inside of the first chamber 11 becomes, for example, lTorr. The opening / closing control of the nozzle 14 is controlled by the amount of nitrogen gas supplied to the first chamber 11 as an example. For example, it is performed under the condition of lOOccZ.

[0047] It should be noted that the inside of the first chamber 11 may be in a normal pressure state that is not in a reduced pressure state. If necessary, another inert gas may be supplied into the first chamber 11 instead of the N gas.

2

Alternatively, a mixed gas of N gas and other inert gas may be used.

2

[0048] The heater 8 is raised in a range where the distance between the wafer 7 and the lamp 3 is, for example, 100 to 200 mm so that the light irradiated from the lamp 3 reaches the wafer 7 without unevenness in intensity. Yes.

Next, light is irradiated from the lamp 3 to the wafer 7. In this case, the illuminance of light measured by the light receiving sensor 9, for example 8MWZcm ² when the illuminance is high pressure mercury lamp, as in the case of halogen lamps the example 15MWZcm ^2, controls the lamp 3.

At this time, if the wafer 7 is irradiated with light at the above illuminance, the insulating film in the wafer 7 may be cracked by desorbed gas or may be peeled off. . Therefore, based on the measurement result of the light receiving sensor 9, the illuminance of the lamp 3 is increased continuously or stepwise in a time of about 5 to: L0 seconds. The increase in illuminance may be, for example, linear, exponential, or another form.

[0051] Thereafter, when a predetermined time (for example, 1 to 2 minutes) elapses from the start of irradiation, the irradiation is completed and the valve 14 on the nitrogen gas side is closed. In this way, unstable C H bonds, Si—CH bonds, H—CH Si (CH) bonds, etc. in the NORI insulating film 32 and the low-k film 33 are removed.

3 2 3 3 Remove and lower the dielectric constant of low-k film 33.

[0052] Subsequently, for example, while maintaining the reduced pressure of lTorr, the valve 14 on the oxygen gas side is opened, and O 2 gas is supplied into the first chamber 11 at a rate of lOOccZ for about 1 minute. Clean inside chamber 1.

Next, the wafer 7 is transferred from the first chamber 11 into the second chamber 2 by the transfer chamber 44. Wafer 7 is processed in the second chamber 12 in the same manner as in the processing in the first chamber 1. The condition for irradiating the wafer 7 from the low-pressure mercury lamp is that the illuminance is 3 mWZcm. ² For example, the irradiation time is 1 to 4 minutes. By this irradiation, an increase in the dielectric constant of the low-k film 33 can be suppressed, and the mechanical strength can be increased. The wafer 7 taken out from the second chamber 12 has, for example, a low-k film 33 having a Young's modulus of about 5 GPa or more and a dielectric constant of 2.5 or less. Also, the Young's insulating film 32 has a Young's modulus of about 60 GPa, a dielectric constant of about 4.0, and a density of about 2.5 gZcm ³ .

[0055] (Embodiment 2)

FIG. 6 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 2 of the present invention. FIG. 7 is a schematic configuration diagram of the chamber 15 in FIG. In the present embodiment, the first chamber 1 and the second chamber 1 shown in FIG.

The chamber 15 includes a plurality of (for example, five) lamps 3 and a plurality of (for example, four) lamps 21. Here, the distance between the lamp 21 and the wafer 7 is about 100 mm when the chamber 15 is used. On the other hand, the distance between the lamp 3 and the wafer 7 is about 120 mm. The number of the lamps 3 and the low-pressure mercury lamps 21 may be the same, or the lamps 3 and 21 may be arranged two-dimensionally.

[0057] The wafer 7 may be irradiated with ultraviolet rays first from either the lamp 3 or the lamp 21. However, it was noted that the dielectric constant of the low-k film 33 could not be lowered and the mechanical strength could not be improved even when irradiated simultaneously.

The semiconductor device manufacturing process is the same as that in the first embodiment. The respective irradiation times of the lamp 3 and the lamp 21 may be the same as those in the first embodiment. Under these conditions, the heating time of the wafer 7 before irradiation is 1 minute, the total irradiation time is 5 minutes, and the cleaning time is 1 minute. Nothing to do! /

[Embodiment 3]

In the first and second embodiments, the processing of the low-k film 33 has been mainly described. In the present embodiment, a process for increasing the stress of the SiN film of the strained silicon device will be described.

[0060] A technique using an insulating film in a semiconductor device is a strained silicon technique. Strained silicon technology uses silicon germanium (SiGe) layers at the source and drain to increase the density of electrons and makes use of the property that the lattice of silicon atoms in the channel region under the gate tends to align with each other. This is a technology that increases the mobility of electrons by increasing the distance between the electrodes, reducing the collision of electrons and silicon atoms, which are responsible for source-drain current.

[0061] According to this technique, resistance when electrons flow is reduced, so that electrons can be moved at high speed. It is possible to Therefore, when strained silicon technology is used for a transistor, a transistor capable of high-speed operation can be realized. In order to use strained silicon technology for transistors, a method is adopted in which, for example, a SiN film is formed on an N-channel transistor, and then, for example, thermal annealing or halogen light is irradiated to strain the silicon substrate. Has been.

In this embodiment, the semiconductor manufacturing apparatus shown in FIG. 1 or 6 can also be used. However, instead of the lamp 3, an I lamp that irradiates light with a wavelength of 341 nm, for example,

2

Instead of the lamp 21, for example, an XeBr lamp that irradiates light with a wavelength of 282 nm or an XeCl lamp that irradiates light with a wavelength of 308 nm, for example, is used.

In this embodiment, hydrogen is desorbed from the SiN film by the irradiation light from the I lamp, and the

2

After that, the stress on the SiN film is increased by the irradiation light from the XeBr lamp.

FIG. 8 is a schematic cross-sectional view of a part of the wafer 7 shown in FIG. FIG. 8 shows a P-type silicon layer 51, an N-type region 52 formed in the P-type silicon layer 51, and a source region 53 and a drain region such as SiGe formed in the N-type region 52. 54, a gate insulating film 62 formed on the N-type well region 52, a gate electrode 55 formed on the gate insulating film 62, and a source region 58 and drain such as SiGe formed in the P-type silicon layer 51. Region 59, gate insulating film 63 formed on silicon layer 51, gate electrode 60 formed on gate insulating film 63, SiO films 56 and 61 formed on gate electrodes 55 and 60, and SiO. On membrane 56, 61

twenty two

A SiN film 57 to be a formed sidewall is shown.

The transistor on the source region 53 and drain region 54 side is a P-channel transistor, and the transistor on the source region 58 and drain region 59 side is an N-channel transistor. Such a wafer 7 is formed by a diffusion furnace, an ion implantation apparatus, and a chemical vapor deposition system (CVD) apparatus.

[0066] This wafer 7 has a hydrogen component, etc. in the SiN film 57 due to the irradiation light from the I lamp.

2

The remaining hydrogen in the SiN film 57 is further removed by the irradiation light from the XeBr lamp, and the SiN film 57 is almost completely free of hydrogen. As a result, the mechanical strength of the SiN film 57 is increased.

FIG. 9 is a schematic cross-sectional view after removing a part of the SiN film 57 of the wafer 7 shown in FIG. After the above light irradiation treatment, the P channel transistor side of the SiN film 57 is removed. Thus Create strained silicon devices.

Note that when processing is performed using the semiconductor manufacturing apparatus under the same conditions as in the present embodiment, the hydrogen concentration of the SiN cover insulating film can also be reduced, and the gate caused by hydrogen in the DRAM cover film can be reduced. Toe drain leakage current can be reduced and retention defects can be reduced.

[Embodiment 4]

FIG. 10 is a schematic configuration diagram of the first chamber 11 according to the fourth embodiment of the present invention. This first chamber 11 is suitable when a halogen lamp having a wavelength of 400 nm or more is used.

As shown in FIG. 10, in the present embodiment, the cooling water 2 is used to cool the halogen lamp 3.

2 is used. Here, the halogen lamp 3 removes hydrogen by heating the insulating film on the Si wafer in a short time by the light of the lamp.

[0071] Thereafter, UV light is irradiated from a 308 nm XeCl lamp in the second chamber 12 to increase the stress.

[0072] (Embodiment 5)

FIG. 11 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 5 of the present invention. Here, an example in which a low-k film is formed using an SOD film will be described.

First, in a chamber 101 provided with a coater for spin-coating an SOD film, for example, an SOD film is applied, for example, to 500 nm on a wiring formed on a wafer having a thickness of 300 ηm.

Next, the wafer is transferred to a chamber 102 having a beta stage for blowing off the solvent of the SOD film, and the solvent is blown off by performing beta at a temperature of about 200 ° C.

[0075] The wafer is then transferred to a chamber 103 equipped with a cure stage to drive off solvent and porogen or to harden the film, and a beta for 5 minutes at a temperature of about 400 ° C. Do. Thus, the film is densified, for example, by blowing off the solvent or porogen in the SOD film. Thereafter, the same processing as in the first embodiment is performed. In this case, the low-k film has a dielectric constant of 2.3 or less and a Young's modulus of 6 GPa or more.

[0076] (Embodiment 6)

FIG. 12 is a schematic cross-sectional view of a part of a wafer 7 that is a semiconductor device according to Embodiment 6 of the present invention. In this example, UV annealing is applied to the high-k film 73 in wafer 7. explain about.

This wafer 7 is formed on a silicon wafer 71, for example, a lnm-thick SiO-rich boundary layer 7

2

2 is formed. On the boundary layer 72, for example, a high-k film 73 having a force such as HfO is provided.

2

It is formed with a thickness of nm. On the high-k film 73, an electrode 74 having a force such as polysilicon is formed. The high-k film 73 is formed by supplying N gas ZO gas for about 10 minutes at a temperature of 800 ° C., for example.

twenty two

[0078] In the first chamber 1, light is irradiated for about 2 to 4 minutes at an illuminance of about 5 to 15 mWZcm ² from four XeC 1 lamps having a wavelength of about 308 nm separated from the wafer by 100 to 200 mm. Do

[0079] Next, in the second chamber 12, the illuminance of about 4 to 8 mWZcm ² from the four Xe lamps having a wavelength of about 172 ηm, 100 to 200 mm away from the wafer, and the time of about 1 to 3 minutes, Irradiate light.

[0080] The first chamber 1 and the second chamber 1 are various inert gas atmospheres including a reduced pressure state with a pressure of about lTorr, a temperature of about 500 ° C, and nitrogen gas.

[0081] Further, the cleaning is performed by supplying an oxygen gas supply amount at a rate of, for example, 100 ccZ under a reduced pressure of about lTorr and turning on the UV lamp. After that, for example, the forming gas (N gas ZH gas) treatment is performed at 425 ° C for about 30 minutes.

twenty two

As a result, the charge density in the boundary layer 72 can be reduced to 1 × 10 ¹² Zcm ^3, and the leakage current of the HfO film can also be reduced.

2

[0083] (Embodiment 7)

By the way, in each of the above embodiments, a semiconductor manufacturing apparatus using a lamp that emits light of two types of wavelengths has been described. However, as described with reference to FIGS. 3 and 4, the wavelength of the lamp is defined. By doing so, it is possible to modify the insulating film.

[0084] In the case of a SiN film, there are bonding groups related to hydrogen, such as H-N and H-Si. The wavelengths required to cleave these bonding groups are 353 nm and 399 nm, respectively. Also, about 240 nm is the wavelength corresponding to the absorption edge. Therefore, when the SiN film is irradiated with light having a wavelength of 180 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be decreased. [0085] In the case of the SiCH film, there are bonding groups related to hydrogen such as H—N, C—H, and H—Si. The wavelengths required to cleave these linking groups are 353 nm, 353 nm, and 399 nm, respectively. Moreover, about 265 nm is a wavelength corresponding to the absorption edge. For these reasons, when the SiC H film is irradiated with light having a wavelength of 180 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be decreased.

[0086] In the case of a SiCNH film, hydrogen-related bonding groups such as H—N, C H, and H—Si exist. The wavelengths necessary for cleaving these bonding groups are 274 nm, 353 ηm, 353 nm, and 399 nm, respectively. Moreover, about 265 nm is a wavelength corresponding to the absorption edge. For these reasons, when the SiCNH film is irradiated with light having a wavelength of 274 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be lowered.

[0087] In the case of a SiOCNH film, there are hydrogen-related bonding groups such as H-0, H-N, C-H, and H-Si. The wavelengths necessary to cleave these bonding groups are 280ηm, 353nm, 353nm, and 399nm, respectively. The wavelength corresponding to the absorption edge is about 156 to 263 nm, but the wavelength corresponding to the absorption edge is considered to be about 180 nm considering that the concentration of C and N is more than a few percent. Therefore, when the SiOCNH film is irradiated with light having a wavelength of 180 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be decreased.

[0088] In the case of the SiOCH film, there are bonding groups related to hydrogen such as H-0, H-N, C-H, H-Si. The wavelengths necessary for cleaving these bonding groups are 280 nm, 353 nm, 353 nm, and 399 nm, respectively. Also, the wavelength corresponding to the absorption edge is about 156 nm. For these reasons, when the SiOCH film is irradiated with light having a wavelength of 156 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be lowered.

[0089] In the case of a SiON film, hydrogen-related bonding groups such as H-0, N-H, and H-Si are present. The wavelengths necessary for cleaving this bonding group are 280 nm, 353 nm, and 399 nm. In addition, about 263 nm is a wavelength corresponding to the absorption edge. Therefore, when the SiON film is irradiated with light having a wavelength of 263 nm or more and 400 nm or less, the mechanical strength of the insulating film can be increased and the dielectric constant can be lowered.

[0090] (Embodiment 8) FIG. 17 is a schematic configuration diagram of the prevention ring 8A for preventing the positional deviation of the wafer 7 provided in the first chamber 11 and the second chamber 12. As shown in FIG. FIG. 17 also shows the wafer 7 and the heater 6 described above!

The first chamber 1 and the second chamber 1 according to Embodiment 8 of the present invention prevent the wafer 7 from being misaligned due to static electricity. In order to eliminate static electricity itself, the prevention ring 8A may be a static elimination ring. The prevention ring 8A is used on the heater 6 so as to surround the periphery of the wafer 7.

Here, when the wafer 7 is irradiated with ultraviolet light or the like from the lamp 3, positive and negative charges, that is, static electricity are generated between the uno 7 and the heater 6. As a result, the wafer 7 and the heater 6 attract each other. In this state, if the elevating stage is lowered in order to separate the wafer 7 from the heater 6 after predetermined processing, the wafer 7 force S may be displaced due to the static electricity.

[0093] Usually, the chamber 1 is provided with a sensor for detecting this positional deviation. Therefore, when the positional deviation exceeds a predetermined amount, the sensor reacts to stop the manufacturing process. As a result, continuous processing cannot be performed, and manufacturing throughput is reduced.

[0094] Therefore, as described above, the prevention ring 8A is provided in the first chamber 11 and the second chamber 12 so that the sensor does not react even if the wafer 7 is displaced, thereby preventing the wafer 7 from being attached to the prevention ring 8. It can be stopped by the inner wall of A. In the case of the neutralizing ring 8A, at least the surface may be made of polysilicon, single crystal silicon, aluminum, or the like.

Note that the shape of the static elimination ring 8A is not limited to the mode shown in FIG. 17, and may be, for example, a rectangular parallelepiped or a cuboid. This type of static eliminator may be placed on the heater 6 at a position that does not interfere with the loading and unloading of the wafer 7. However, for example, as shown in FIG. 18, if a plurality of substantially rainbow-shaped neutralization ring pieces 8B are used, the wafer 7 is easily carried into the position surrounded by the static elimination ring pieces 8B. Is unlikely to occur. Whether it is a static elimination body such as a rectangular parallelepiped or the static elimination ring piece 8B, it is easier to create than the static elimination ring 8A.

[0096] Further, if the generated static electricity can be removed, it is not essential to provide the static elimination ring 8A or the like. For example, instead of providing a static elimination ring 8A etc. Can be used as a static elimination pin. The static elimination pin may be made of at least a surface such as polysilicon, single crystal silicon, or aluminum.

Similarly, a polysilicon thin film, amorphous silicon thin film, SiN thin film, SiC film, or SiOC film can be formed on the surface of the heater 6 or the like. The thickness of the thin film is not limited. As an example, the thickness of the thin film can be about 500 to 10,000 angstroms.

[0098] For example, a polysilicon thin film is formed by plasma CVD, sputtering, or low pressure CVD, for example, by applying a high frequency 562 W of 380 KHz to the heater 6 under a substrate temperature surface of 350 ° C and a pressure of 0.6 Torr. Approx. 5,000 to 10,000 angstroms by flowing SiH at 100cc / min

Four

A strom thickness can be formed. SiN thin film is formed by plasma CVD method, sputtering method or low pressure CVD method, for example, applying high frequency 562W of 380KHz to heater 6, substrate temperature surface 350 ° C, pressure 0.6 Torr environment, SiH 100ccZmin

4, NH3 500

By flowing at a rate of OccZmin, a thickness of 3000 to 5000 angstroms can be formed.

[0099] When a SiN thin film is formed on the surface of the heater 6 or the like, if a silicon-rich material is used, it becomes easier for the current to flow. In particular, when a SiC film or SiOC film is formed on the surface of the heater 6 or the like, the aluminum component of the heater 6 or the static elimination ring 8A can be prevented from contaminating the wafer 7. A secondary effect can also be obtained.

[0100] (Embodiment 9)

FIGS. 19 to 21 are views showing a modification of the manufacturing process of the wafer 7 shown in FIGS. Here, we explain the method of using a P-channel transistor as a compressive film and an N-channel transistor as a tensle film.

[0101] In this embodiment, first, a polysilicon thin film 64 having a thickness of about lOOnm, which is an ultraviolet light absorber, is applied to a transistor on the source region 53 and drain region 54 side of the wafer 7, that is, a P-channel transistor. Form. In this state, UV light of low-pressure mercury is irradiated to the P-channel transistor and N-channel transistor for 5 minutes at 400 ° C and illuminance of 14 mWZcm2, for example (Fig. 19).

[0102] As a result, the SiN film 57 on the N-channel transistor side has a tensile stress of about 1.5 GPa. It becomes. The conditions of the ultraviolet light absorbing material are not limited to polysilicon as long as it has a band gap for realizing the absorption and can withstand the heating of about 400 ° C.

Next, the polysilicon thin film 64 formed on the P-channel transistor is removed (FIG. 20). As a result, only the SiN film 57 on the N channel transistor side is subjected to tensile stress.

[0104] Thereafter, the N channel transistor is covered with a thick resist film 65, and N + ions are implanted into the center of the SiN film 57 on the P channel transistor side, for example, at a dose of 5 X 1015 using an ion implanter (Fig. 21). ). At this time, since the SiN film 57 on the N channel transistor side is protected by the resist film 65, the stress does not change. On the other hand, the SiN film 57 on the P channel transistor side is stressed and becomes about lGPa.

Then, by removing the resist film 65 covering the N-channel transistor, the wafer 7 shown in FIG. 8 is obtained.

Example

[Example 1]

Using the semiconductor manufacturing apparatus shown in FIG. 1 or FIG. 17 and the like, the semiconductor device was actually manufactured through the low-k film 33 treatment under the following conditions.

[0107] Lamp 1 in the first chamber 3: Four high-pressure mercury lamps with a wavelength of about 300 nm to 770 nm, illumination of about 8 mWZcm ² , irradiation time of about 4 minutes,

Low pressure mercury lamp in the second chamber: 4 lamps with wavelengths of about 186 nm and about 254 nm, illuminance of about 3 mWZcm ² , irradiation time of about 1 minute,

1st chamber 1 and 1st chamber 2: lTorr depressurized condition, temperature of about 400 ° C, various inert gas atmospheres including nitrogen gas, cleaning, and cleaning conditions under lTorr depressurized! / Large oxygen gas supply volume for lOOccZ,

Wafer 7: A SiOCH film with a diameter of about 300 mm and a thickness of about 300 nm is formed!

As a result, the Young's modulus indicating the mechanical strength of the wafer 7 was 8 GPa. The dielectric constant was 2.4.

[Example 2]

Using the semiconductor manufacturing equipment shown in Fig. 6 or 17 etc., low-k film 33 under the following conditions: Through these processes, a semiconductor device was actually manufactured.

[0110] Lamp 3: Four high-pressure mercury lamps with a wavelength of about 300 nm to 770 nm, illuminance of about 4 mW / cm ² , irradiation time of about 4 minutes,

Lamp 21: 4 low-pressure mercury lamps with wavelengths of about 186 nm and 254 nm, illuminance of about 3 mW / cm ² , irradiation time of about 1 minute,

Chamber 1: lTorr decompression state, temperature is about 250 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply rate is lOOcc / min under cleaning conditions of lTorr decompression,

[0112] (Example 3)

A semiconductor device was actually manufactured by processing the SiN film 57 under the following conditions using the semiconductor manufacturing apparatus shown in FIG. 1 or FIG.

[0113] Lamp 1 in chamber 1 3: 4 I lamps with a wavelength of about 341 nm, illuminance of about 13 mW

2

Irradiation time about 2 minutes,

Lamp in the second chamber 12: 4 XeBr lamps with a wavelength of about 282nm, illuminance of about 13m W / cm ² , irradiation time of about 2 minutes,

1st chamber l: lTorr decompression state, temperature is about 400 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply amount is lOOccZ for cleaning conditions under reduced pressure of lTorr,

Second chamber 1: lTorr decompression state, temperature is about 400 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply amount is lOOccZ for lTorr under reduced pressure

Wafer 7: Diameter is about 300 mm, DRAM is formed, and the cover SiO film has a cover.

2

One SiN film force S is formed with a thickness of about 300 nm.

As a result, the hydrogen concentration in the cover SiN film 57 can be reduced, the leakage current in the DRAM gate-drain region can be reduced, and the data retention time can be increased. The defective rate could be reduced.

[0115] (Example 4)

[0116] Lamp 1 in the first chamber 1: 4 I lamps with a wavelength of about 341nm, illuminance of about 13mW

2

Irradiation time about 2 minutes,

Lamp in the second chamber 1-2: 4 XeCl lamps with a wavelength of about 308nm, illuminance of about 13m W / cm ² , irradiation time of about 2 minutes,

1st chamber l: lTorr decompression state, temperature is about 250 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply amount is lOOccZ for lTorr under reduced pressure cleaning condition

Second chamber 1: lTorr decompression state, temperature is about 350 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply volume is lOOccZ for cleaning conditions of lTorr decompression,

Wafer 7: A diameter of about 300 mm, DRAM is formed, and a sidewall SiN film is formed on the transistor with a thickness of about 300 nm!

[0117] As a result of measuring the mechanical strength of the semiconductor manufacturing apparatus before and after the treatment, the tensile stress was 2 X 10 ⁹ dyneZcm ² before the treatment, whereas 2 X 10 ^1G dyneZcm ² was obtained after the treatment. It was tensile stress. As a result, the source / drain current increased.

[0118] (Example 5)

[0119] Halogen lamp in the first chamber: 4 lamps with a wavelength of about 400 or more and 770 nm or less, illuminance of about 15mWZcm ² , irradiation time of about 2 minutes,

Low pressure mercury lamp in the second chamber: 4 lamps with wavelengths of about 186 nm and about 254 nm, illumination intensity of about 3 mWZcm ² , irradiation time of about 2 minutes,

1st chamber 1 and 1st chamber 2: lTorr depressurized condition, temperature is about 400 ° C, various inert gas atmospheres including nitrogen gas, vacuum, cleaning conditions are lTorr depressurized /! Oxygen gas supply volume for lOOccZ minutes,

Wafer 7: A diameter of about 300 mm and a SiOCH film with a thickness of about 300 nm are formed!

[0121] (Example 6)

Using the semiconductor manufacturing apparatus shown in FIG. 1 or FIG. 17 and the like, the semiconductor device was actually manufactured through the processing of the SOD film 33 under the following conditions.

[0122] Lamp 1 in the first chamber 1 3: 4 XeCl lamps with a wavelength of about 308 nm,

Illuminance is about 10mWZcm ² , irradiation time is about 4 minutes,

Lamp in the second chamber 1-2: 4 Xe lamps with a wavelength of about 172 nm, illuminance of about 4 mWZ cm ² , irradiation time of about 1 minute,

1st chamber 1 and 1st chamber 2: lTorr reduced pressure, temperature about 350 ° C, various inert gas atmospheres including nitrogen gas, cleaning, cleaning conditions lTorr reduced pressure! / Large oxygen gas supply volume for lOOccZ,

Wafer 7: A 300 mm diameter, SOD film 33 is formed with a thickness of about 300 nm!

As a result, the Young's modulus indicating the mechanical strength of the wafer 7 was 8 GPa. The dielectric constant was 2.3.

[0124] (Example 7)

Using the semiconductor manufacturing equipment shown in Fig. 1 or 17, etc., the HfO film 33 is

2 After processing, a semiconductor device was actually manufactured.

[0125] Lamp 3 in the first chamber 1: 4 XeCl lamps with a wavelength of about 308 nm, illuminance of about 10 mW / cm ² , irradiation time of about 4 minutes,

1st chamber 1 and 1st chamber 2: lTorr depressurized state, temperature is about 500 ° C, various inert gas atmospheres containing nitrogen gas, cleaning, cleaning conditions are lTorr depressurized! / Large oxygen gas supply volume for lOOccZ,

Wafer 7: SiO-rich boundary layer with a diameter of about 300mm and a thickness of about lnm, and on the boundary layer The formed HfO film having a thickness of about 5 nm is formed.

2

As a result, the charge density in the boundary layer could be reduced to 1 × 10 ¹² Zcm ³ and the leakage current of the HfO film could be reduced.

2

[Example 8]

A semiconductor device was actually manufactured using the semiconductor manufacturing apparatus shown in FIG. In this embodiment, an example in which the noria one insulating film (SiOC film) 22 formed on the Cu wiring layer 21 shown in FIG.

[0128] Lamp: 4 KrCl lamps with a wavelength of about 222 nm, illuminance of about 4

2 to 15mWZcm ² , irradiation time about 1 to 2 minutes, distance to wafer 7 about 10 to 20cm,

Chamber 1: lTorr decompression state, temperature power of about 300-400 ° C, various inert gas atmospheres containing nitrogen gas, and oxygen gas supply amount of lOOccZ for cleaning conditions of lTorr decompression,

Wafer 7: Diameter is about 300 mm, and as shown in FIG. 13, a SiOC film 22, which is a barrier film having a thickness of about 3 Onm, is formed on the Cu wiring layer 21.

[0129] Even if the modified SiOC film 22 is subjected to heat treatment at a temperature of about 400 ° C for 3 hours, the SiOC film 22 has a high density, so that almost no leakage current flows from the SiOC film 22. It did not flow.

[0130] (Example 9)

A semiconductor device was actually manufactured using the semiconductor manufacturing apparatus shown in FIG. In this example, a PE-CVDSiN film 24 deposited by force by opening a Noria insulating film 23 formed via a low-k film (SiOC film) 22 on the Cu wiring layer 21 shown in FIG. An example of increasing the density will be described.

[0131] Lamp: 4 XeCl lamps with a wavelength of about 308 nm, illuminance of about 4-15 mWZcm ² , irradiation time of about 1-2 minutes, distance to wafer 7 of about 10-20 cm,

Wafer 7: Diameter is about 300mm, as shown in Fig. 14, Cu wiring layer 21, thickness from substrate side A SiOC film 22, a NORI insulation film 23, and a PE-CV DSiN film 24, which are low-k films with a thickness of about 30 nm, are formed!

[0132] As shown in Fig. 15, a tantalum / tantalum nitride (TaZTaN) film, which is a diffusion prevention metal 25, 26, is formed on the PE-CVDSiN film 24 thus modified, and a Cu wiring layer is formed in the via. Even if the wafer 7 on which 27 is formed is heated at a temperature of about 400 ° C. for 3 hours, PE—CVDSiN 24 forming the side surface of the via hole has a high density. As a result, Ta in diffusion prevention metal 25 and 26 did not diffuse.

[Example 10]

By the way, in a DRAM having a shallow trench isolation (Shallow Trench Isolation: STI) region, if a negative bias is applied to a word line, the leakage current between the gate and the drain increases, which causes a data retention failure. Yes. It is also known that these phenomena occur when packaging at 250 ° C.

[0134] It has been found that this phenomenon is caused by hydrogen in the cover SiN film. This hydrogen is thought to generate traps in the forbidden band of the channel region where the gate and drain overlap.

In this example, a semiconductor device was actually manufactured using the semiconductor manufacturing apparatus shown in FIG. 6 or FIG. In this example, the cover PE-CVD SiN film 84 covering the cover SiO film 83 on the transistor 82 formed on the silicon wafer 81 shown in FIG.

2

explain about.

[0136] Lamp: 4 XeCl lamps with a wavelength of about 308 nm, illuminance of about 4-15 mWZcm ² , irradiation time of about 1-2 minutes, distance to wafer 7 of about 10-20 cm,

Wafer 7: Diameter is about 300 mm, and transistor 82 and the like are formed as shown in FIG.

[0137] As a result of measuring the hydrogen concentration in the cover PE-CVDSiN film 84 thus modified, it was about 30% before the reforming and about 10% after the reforming. By the way, cover P By changing the pressure in the CVD process of the E-CVDSiN film 84, replacing it with the cover LP-CV DSiN film, it was about 25% before modification, but about 1% after modification. Natsu.

[Example 11]

In the present embodiment, a modification of the fourth embodiment will be described. Using the semiconductor manufacturing apparatus shown in FIG. 6 or FIG. 17 and the like, the HfO film 33 is processed under the following conditions, and the semiconductor device is actually processed.

2

A vice was manufactured.

[0139] Lamp: 4 XeBr lamps with a wavelength of about 282nm, illuminance of about 5-13mWZcm ² , irradiation time of about 3 minutes,

Wafer 7: LP-SiN film with a diameter of about 300 mm and sidewalls is formed with a thickness of about 300 nm.

[0140] As a result of measuring the mechanical strength of the semiconductor manufacturing apparatus before and after the treatment, the tensile stress of 2 X 10 ⁹ dyneZcm ² was obtained before the treatment as in Example 4, whereas after the treatment, The tensile stress was 2 X 1 0 ^1G dyneZcm ² . As a result, the source-drain current increased.

FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 1 of the present invention.

2 is a schematic configuration diagram of the first chamber 11 in FIG.

FIG. 3 is a diagram showing the relationship between the wavelength of irradiated light and the binding energy of a substance.

FIG. 4 is a diagram showing the relationship between the wavelength of irradiated light, the absorption edge, and the binding energy.

5 is a schematic cross-sectional view of a part of the wafer 7 shown in FIG.

FIG. 6 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 2 of the present invention.

7 is a schematic configuration diagram of the chamber 15 in FIG. 6.

8 is a schematic cross-sectional view of a part of the wafer 7 shown in FIG.

9 is a schematic cross-sectional view after removing a part of the SiN film 57 of the wafer 7 shown in FIG. FIG. 10 is a schematic configuration diagram of a first chamber 11 according to Embodiment 4 of the present invention.

FIG. 11 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to Embodiment 5 of the present invention.

FIG. 12 is a schematic cross-sectional view of a part of a wafer 7 to be a semiconductor device according to Embodiment 6 of the present invention.

FIG. 13 is a partial cross-sectional view of a semiconductor device according to an example of the present invention.

FIG. 14 is a partial cross-sectional view of a semiconductor device according to an example of the present invention.

FIG. 15 is a partial cross-sectional view of a semiconductor device according to an example of the present invention.

FIG. 16 is a partial cross-sectional view of a semiconductor device according to an example of the present invention.

FIG. 17 is a schematic configuration diagram of a prevention ring 8 A for preventing the positional deviation of the wafer 7 provided in the first chamber 11 and the second chamber 12.

FIG. 18 is a diagram showing a modification of FIG.

FIG. 19 is a diagram showing a modification of the manufacturing process of the wafer 7 shown in FIGS. 8 and 9.

20 is a view showing a modification of the manufacturing process of the wafer 7 shown in FIGS. 8 and 9. FIG.

FIG. 21 is a view showing a modification of the manufacturing process of the wafer 7 shown in FIGS. 8 and 9.

Explanation of symbols

1 First chamber

2 Second chamber 1

3 Lamp

4 Quartz pipe

5 Inert gas

7 wafers

6 Heater

8 pin

9 Light sensor

11 Piping

12 Piping

13 Mass flow

14 Valve hoop

Weno alignment Load lock chamber 1 Transfer chamber 1

Claims

The scope of the claims

[1] a first irradiation means for irradiating the insulating film with ultraviolet light having a first wavelength;

A second irradiation means for irradiating the insulating film with ultraviolet light or visible light having a second wavelength different from the first wavelength;

An irradiation apparatus comprising:

[2] The insulating film is a low dielectric constant film,

One of the lights is light having a wavelength equal to or less than a wavelength necessary for cutting a bonding group that is not in a stable state in the insulating film,

The other of the lights is light having a wavelength longer than the absorption edge.

The irradiation apparatus according to claim 1.

[3] The insulating film is an inter-wiring insulating film or a Noria one insulating film,

One of the lights is light having a wavelength equal to or shorter than a wavelength necessary for cutting the bonding group in the insulating film.

The irradiation apparatus according to claim 1.

[4] The insulating film is a high dielectric constant gate insulating film,

One of the lights is light having a wavelength less than a wavelength necessary for the oxidation of the transition metal or a wavelength necessary for breaking the CH bond,

The irradiation apparatus according to claim 1.

[5] The irradiation device according to any one of claims 1 to 4,

A transfer device for transferring a wafer having the insulating film;

A semiconductor manufacturing apparatus comprising:

6. The semiconductor manufacturing apparatus according to claim 5, wherein the first and second irradiation means are provided in the same or different chambers.

[7] Manufactured by chemical vapor deposition equipment, dielectric constant is 2.4 or less, Young's modulus is 5

A semiconductor device comprising an insulating film having a GPa or higher.

[8] Manufactured by spin coating film forming equipment, dielectric constant is 2.3 or less, Young's modulus is 6G A semiconductor device comprising an insulating film that is at least Pa.

A first irradiation step of irradiating the insulating film with ultraviolet light having a first wavelength;

A second irradiation step of irradiating ultraviolet light or visible light having a second wavelength different from the first wavelength after the first irradiation step;

Irradiation method including.