JPH1167759A - Manufacture of semiconductor substrate with high breakdown voltage - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce leak current with high reverse voltage applied by first forming a silicon dioxide film while applying ultraviolet rays onto a pn junction surface and thereafter sealing the silicon dioxide film and a second film adjacent to the silicon dioxide film using a molding resin. SOLUTION: Far ultraviolet rays are applied onto a semiconductor surface to form a silicon dioxide film 4 that becomes a first passivation film. Then, a second passivation film 5 is formed by covering the film 4 and first solder portions 12 and 13. Further, a molding resin 6 serving also as a package is formed by covering the film 5, an anode electrode 22 and a cathode electrode 23. A polyimide resin 5 of which the film 5 is made is applied, and cured in an atmosphere of nitrogen at temperatures ranging from 150 to 250 deg.C. As the final step, an epoxy resin 6 is formed by a transfer molding method, and the resin 6 is after-cured in the atmosphere of nitrogen at a temperature lower than the temperature for curing the film 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a high voltage semiconductor device in which a resin is formed on the surface of a high voltage pn junction exposed at an end face and stabilized.

[0002]

2. Description of the Related Art Various techniques have been proposed for increasing the breakdown voltage and increasing the reliability of a resin-molded semiconductor device in which a semiconductor device is covered with a resin.

As a conventional method of manufacturing a diode, for example, there is a technique described in Japanese Patent Publication No. 57-16500.
According to this conventional technique, first, an electrode is formed on a semiconductor element, and then the semiconductor element is partially covered with a polyimide resin. Thereafter, the semiconductor element is subjected to a heat treatment at a temperature of 250 ° C. or more to form an electrode on the electrode. This shows that the direct connection of the lead electrode can prevent the reduction of the reverse withstand voltage.

As a technique for suppressing the generation of microplasma noise in a stacked high withstand voltage semiconductor element in which a plurality of pn diode pellets are stacked with a brazing material, see Japanese Patent Application Laid-Open No. 58-20 / 1983.
There is a technique described in Japanese Patent No. 9150. According to this conventional technique, the volume resistivity of the surface protection layer provided on the surface of the semiconductor element is selected so that the current flowing through the surface protection layer when a reverse voltage is applied is larger than the reverse leakage current of each diode chip. It is said that the generation of plasma noise can be suppressed.

[0005] Further, as a conventional technique for increasing the breakdown voltage of a resin mold semiconductor device, there is a technique described in Japanese Patent Application Laid-Open No. 58-48955. According to this conventional technique, it is said that by laminating with a brazing material having portions protruding from the side surfaces of a plurality of stacked semiconductor chips, it is possible to solve a problem that defects such as a decrease in breakdown voltage increase.

[0006] In addition to the above-mentioned prior art, as a technique for preventing deterioration in withstand voltage and a reduction in reliability life of a resin-molded semiconductor device, particularly due to peeling of a passivation film,
There are techniques described in JP-A-5-160521 and JP-A-7-147393. According to the former of these technologies, the radiation surface side of the end face destruction prevention layer is irradiated with ultraviolet rays, and a high adhesion layer is formed between the sealing resin layer and the interface. Peeling is suppressed,
It is said that a semiconductor laser device having stable laser light characteristics and a long life can be realized.

According to the latter technique, the bevel region at the peripheral portion of the semiconductor substrate is subjected to acid etching to remove the processing distortion, and is irradiated with ultraviolet rays by a high-pressure mercury lamp to obtain a polyimide resin serving as a first passivation film, and further a resin. By forming the frame, the bonding strength between the semiconductor substrate and the polyimide resin can be made larger than the bonding strength between the polyimide resin and the resin frame, so even if the resin frame is cracked, the crack does not propagate to the polyimide resin and peels off. Is prevented, and the breakdown voltage does not deteriorate.

[0008]

However, in the prior art described in Japanese Patent Publication Nos. 57-16500, 58-209150 and 58-48955, a reverse bias is applied to a diode. In the blocking state where a voltage is applied, no consideration has been given to the problems related to the reduction in breakdown voltage and the increase in leakage current due to the charge of ions in the passivation film.

Furthermore, in the technique described in Japanese Patent Application Laid-Open No. 5-160521, if a high adhesion layer is formed between the end face destruction preventing layer and the sealing resin layer, the semiconductor surface and the end face destruction preventing layer are reversed. There has been a problem of peeling and lowering of withstand voltage.
Further, in the technology described in JP-A-7-147393,
Separation occurs between the semiconductor surface and the polyimide resin serving as the first passivation film, the withstand voltage decreases due to the charge of positive ions present in the polyimide resin formed directly on the semiconductor surface, and the leakage current particularly at high temperatures There was a problem that increases.

An object of the present invention is to provide a method of manufacturing a high breakdown voltage semiconductor device which solves the problems of the conventional semiconductor device and the method of manufacturing the same.

Specifically, an object of the present invention is to provide a method of manufacturing a high breakdown voltage semiconductor device capable of reducing a leak current in a blocking state to which a high reverse voltage is applied, and improving reliability and yield. It is in.

[0012]

SUMMARY OF THE INVENTION In order to achieve the above object, according to the present invention, a wavelength of 199 nm is applied to an exposed pn junction surface.
The first passivation film is formed by irradiating the first passivation film with far ultraviolet light of m or less, forming a second passivation film in contact with the first passivation film, and sealing with a molding resin. Or after the second passivation film is formed in contact with the first passivation film,
A second ultraviolet ray having a wavelength of not less than nm and not more than 400 nm is irradiated, and further sealed with a molding resin.

The material of the second passivation film is a polyimide resin, and the material of the mold resin is an epoxy resin.

Further, before the formation of the first passivation film or after the formation of the second passivation film, the semiconductor device of the subassembly is mounted on a movable transfer belt, and the first ultraviolet ray irradiation or The second ultraviolet irradiation is performed.

Alternatively, a concave portion which is long in the traveling direction is
The first passivation film on a holder having a location, a rail longer than the holder having a recess at the upper portion facing the recess, and a holder of a transfer device in which a spherical ball is arranged between the holder and the rail. The semiconductor device of the subassembly before the formation or after the formation of the second passivation film is mounted, and the first ultraviolet irradiation or the second ultraviolet irradiation is performed from above and below the holder.

[0016]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view showing a first embodiment of a high breakdown voltage semiconductor device manufactured by a method of manufacturing a high breakdown voltage semiconductor device according to the present invention. In the embodiment of FIG. 1, a sectional view of a diode is shown as a high breakdown voltage semiconductor device. p ⁺ -type semiconductor region 2, n-type semiconductor region 1, n ⁺ -type semiconductor regions 3 of high impurity concentration is formed adjacent, p ⁺ -type semiconductor region 2 and each of the n ⁺ -type semiconductor regions 3 of high impurity concentration Anode electrode 2 via first solders 12 and 13
2 and a cathode electrode 23 are formed. A silicon dioxide film 4, which is a first passivation film, is formed on the surface of the p ⁺ type semiconductor region 2, the n type semiconductor region 1, and the n ⁺ type semiconductor region 3 having a high impurity concentration by the method of manufacturing a high breakdown voltage semiconductor device of the present invention. And the silicon dioxide film 4 and the first solder 1
A second passivation film 5 is formed so as to cover 2 and 13, and a molding resin 6 also serving as a package is formed so as to cover second passivation film 5, anode electrode 22 and cathode electrode 23.

FIG. 2 is an explanatory view of a method of forming the silicon dioxide film 4 serving as a first passivation film according to the present invention. In FIG. 2, the description of the same reference numerals as in FIG. 1 is omitted. 8
Is an ultraviolet irradiation lamp for the first ultraviolet irradiation used in the present invention. The ultraviolet light emitted from this ultraviolet irradiation lamp has a wavelength of 200 nm or less, for example, a far ultraviolet wavelength of 184.9 nm included in a low-pressure mercury lamp. ing. By irradiating far ultraviolet rays of this wavelength, oxygen molecules in the atmosphere or in an oxygen atmosphere are converted into ozone 7 having a strong oxidizing property. According to the present invention, the silicon dioxide film 4 serving as the first passivation film having very high density is formed by the ozone 7 generated by the far ultraviolet rays. Normally, a natural oxide film is formed on the semiconductor surface, and the natural oxide film contains positive fixed charges of about 5 × 10 ¹¹ / cm ² such as sodium ions. A depletion layer is formed on the surface of the p-type semiconductor region. The specific surface recombination speed increases on the semiconductor surface that has become a depletion layer, and when a reverse bias voltage is applied to the pn junction, a surface-generated current that causes the largest increase in leakage current flows. Conversely, on the surface of the n-type semiconductor region, a storage layer is formed, so even if a reverse bias voltage is applied to the pn junction, the depletion layer does not expand from the inside on the surface and the electric field concentration occurs, and the breakdown voltage decreases. I do.

In the silicon dioxide film 4 formed by the irradiation of far ultraviolet rays according to the present invention, a positive fixed charge is applied to about 1 × 10 ^11.
/ Cm ² or less, which proved to be an extremely clean first passivation film. It is considered that the silicon dioxide film 4 is formed on the semiconductor surface by the far ultraviolet rays and also has an effect of neutralizing sodium ions taken into the silicon dioxide film 4. Therefore, p ⁺
A depletion layer is hardly formed on the surface of the n-type semiconductor region 2, the surface generated current can be extremely reduced, an accumulation layer is hardly formed on the surface of the n-type semiconductor region 1, and a reverse bias voltage is applied to the pn junction. When a voltage was applied, a depletion layer almost equal to the inside spreads out even on the surface, so that a failure in lowering the breakdown voltage could be drastically reduced.

Next, a method of manufacturing the high breakdown voltage semiconductor device shown in FIG. 1 according to the present invention will be described with reference to FIG. 3, the description of the same reference numerals as those shown in FIG. 1 is omitted. As shown in FIG. 3A, the surface of the diode sub-assembly is etched by about several μm using, for example, an alkaline solution of KOH to remove the surface layer. Thereafter, pure water cleaning and pure water draining are performed, acetone immersion, isopropyl alcohol immersion or isopropyl alcohol vapor cleaning is performed, and the surface is dried by nitrogen blowing or infrared irradiation. Subsequently, as shown in FIG. 3 (b), the silicon dioxide film 4 serving as the first passivation film according to the present invention has a wavelength of 184.
First ultraviolet irradiation is performed by irradiating the semiconductor surface with 9-nm far ultraviolet rays for 5 to 30 minutes. Next, FIG.
As shown in (c), a polyimide resin 5 such as polyimide silicone which is to be a second passivation film is applied and
Curing in a nitrogen atmosphere at a temperature of 50-250 ° C.
Finally, as shown in FIG.
Is formed by transfer molding, and after-curing is performed in a nitrogen atmosphere at a temperature lower than the curing temperature of the second passivation film.

By using such a method of manufacturing a high-breakdown-voltage semiconductor device according to the present invention, a dense silicon dioxide film 4 serving as a first passivation film and having a small positive charge of sodium ions in the film can be formed. The breakdown voltage of the semiconductor device was set to an almost ideal value, and the leakage current was extremely reduced. Further, the silicon dioxide film 4 according to the present invention is interposed between the surface of the p ⁺ -type semiconductor region 2, the n-type semiconductor region 1, the n ⁺ -type semiconductor region 3 having a high impurity concentration and the polyimide resin 5 as the second passivation film. As a result, the film peeling of the polyimide resin 5 was completely eliminated, and the reliability was significantly improved.

Further, another method of manufacturing the high breakdown voltage semiconductor device shown in FIG. 1 according to the present invention will be described with reference to FIG. 4, the description of the same reference numerals as those shown in FIG. 3 is omitted. 4 (a) and 4 (b) are the same as those shown in FIG. Next, FIG.
As shown in (c), a polyimide resin 5 such as polyimide silicone which is to be a second passivation film is applied, and 15
After curing in a nitrogen atmosphere at a temperature of 0 to 250 ° C,
The wavelength radiated from the ultraviolet irradiation lamp 9 is 200 nm or more.
The semiconductor surface is irradiated with ultraviolet light of 400 nm for 5 to 30 minutes to perform second ultraviolet irradiation. Finally, an epoxy resin 6 similar to that shown in FIG. 3D is formed by transfer molding, and after-curing is performed in a nitrogen atmosphere at a temperature lower than the curing temperature of the second passivation film.

As described above, the adhesion between the silicon dioxide film 4 serving as the first passivation film and the polyimide resin 5 serving as the second passivation film can be improved by using another method of manufacturing the high breakdown voltage semiconductor device of the present invention. 2 A film between the silicon dioxide film 4 serving as the first passivation film and the polyimide resin 5 serving as the second passivation film, which can be made stronger than the adhesion between the passivation film, the polyimide resin 5 and the epoxy resin 6. Peeling could be prevented, and the reliability could be significantly improved.

(Embodiment 2) FIG. 5 is a sectional view showing a second embodiment of a high breakdown voltage semiconductor device manufactured by using the method of manufacturing a high breakdown voltage semiconductor device according to the present invention. The semiconductor pellet 10 having the p ⁺ type semiconductor region 2, the n type semiconductor region 1, and the n ⁺ type semiconductor region 3 having a high impurity concentration adjacent to each other is
The anode electrode 22 and the cathode electrode 23 are formed on the p ⁺ -type semiconductor region 2 and the n ⁺ -type semiconductor region 3 with a high impurity concentration at both ends via the first solders 12 and 13, respectively. Have been. On the surface of the plurality of p ⁺ -type semiconductor regions 2, n-type semiconductor regions 1, and high impurity concentration n ⁺ -type semiconductor regions 3, a silicon dioxide film 4 as a first passivation film according to the method of manufacturing a high breakdown voltage semiconductor device of the present invention. Are formed, and the silicon dioxide film 4 and the first solders 12, 1 are further formed.
3, a second passivation film 5 is formed to cover
Further, the second passivation film 5, the anode electrode 22
A molding resin 6 also serving as a package is formed so as to cover the cathode electrode 23. As described above, the use of the plurality of semiconductor pellets 10 can further increase the breakdown voltage as compared with the first embodiment shown in FIG.

FIG. 6 is a cross-sectional view showing a process for manufacturing the high breakdown voltage semiconductor device of the second embodiment shown in FIG. 5 of the present invention. The basic manufacturing steps (a), (b),
(c) and (d) show the manufacturing steps (a), (b),
Although they correspond to (c) and (d) and the description is omitted here, the plurality of semiconductor pellets 10 are connected in series according to the breakdown voltage of the high breakdown voltage semiconductor device obtained by the manufacturing method of FIG. Higher withstand voltage is possible. If necessary, a polyimide resin 5 such as polyimide silicone which is to be the second passivation film shown in FIG.
The second ultraviolet irradiation using the ultraviolet irradiation lamp 9 after curing in a nitrogen atmosphere at a temperature of 0 to 250 ° C. may be omitted.

(Embodiment 3) FIG. 7 shows a first schematic configuration diagram of an ultraviolet irradiation apparatus used for manufacturing a high breakdown voltage semiconductor device according to the present invention. Numerals 8 and 9 are ultraviolet lamps used for the first ultraviolet irradiation and the second ultraviolet irradiation described in FIGS. 3, 4 and 6, respectively. Here, when using the ultraviolet lamp 8, 1
3A and FIG. 4 in which the first passivation film 4 is not formed in the subassembly of the semiconductor device shown in FIG.
6A, and when the ultraviolet lamp 9 is used, the subassembly of the semiconductor device denoted by reference numeral 100 has the second passivation film 5 formed thereon, as shown in FIGS. It has the sectional structure of FIG. 4C or FIG. 6C. Reference numeral 30 denotes a transport belt on which the subassembly 100 of the semiconductor device is mounted, and a plurality of subassemblies 100 are mounted on the transport belt.
As shown in FIG. 7, by moving the conveyor belt on which a plurality of sub-assemblies 100 of the semiconductor device are mounted from the right to the left while irradiating the ultraviolet rays emitted from the ultraviolet irradiation lamps 8 or 9, UV irradiation can be performed continuously, and the mass productivity is extremely excellent.

In the first ultraviolet irradiation, the wavelength is 184.
When an ultraviolet lamp 8 that emits 9 nm deep ultraviolet light is used, p ^{+ of the} subassembly of the semiconductor device shown in FIG.
Semiconductor region 2, n-type semiconductor region 1, high impurity concentration n
^A first passivation film 4 on the surface of the ⁺ type semiconductor region 3;
Is formed. The atmosphere in this case may be air or oxygen.

In the second ultraviolet irradiation, the wavelength is 2
When an ultraviolet lamp 9 that emits ultraviolet light having a wavelength of 00 to 400 nm is used, the adhesion between the silicon dioxide film 4 serving as the first passivation film and the polyimide resin 5 serving as the second passivation film is improved. Adhesion with the epoxy resin 6 can be strengthened, and it is possible to prevent film peeling between the silicon dioxide film 4 serving as the first passivation film and the polyimide resin 5 serving as the second passivation film. , The reliability can be significantly improved. The atmosphere in this case may be air or nitrogen.

FIG. 8 shows a second schematic configuration diagram of an ultraviolet irradiation apparatus used for manufacturing a high breakdown voltage semiconductor device according to the present invention.
Numerals 8 and 9 are ultraviolet lamps used for the first ultraviolet irradiation and the second ultraviolet irradiation described in FIGS. 3, 4 and 6, respectively.
Although the basic irradiation method is the same as that shown in FIG. 7 and the details are omitted, in FIG. 8, the first UV irradiation is performed from above the sub-assembly of the semiconductor device shown in FIG.
The difference is that after that, the conveyor belt 30 is moved to the left, and then the second ultraviolet irradiation is performed from below. As described above, by dividing the ultraviolet irradiation into two times, there is an advantage that the temperature rise due to the irradiation of the subassembly 100 of the semiconductor device can be reduced.

FIG. 9 is a third schematic structural view of an ultraviolet irradiation apparatus used for manufacturing a high breakdown voltage semiconductor device according to the present invention.
9, the description of the reference numerals shown in FIG. 7 is omitted. In FIG. 7, the conveyor belt is used in order to increase the productivity of ultraviolet irradiation, but the conveyor belt may be contaminated with heavy metals, organic substances, or the like during the irradiation of ultraviolet rays. In order to solve this problem, in FIG. 9, a quartz holder or rail is used instead of the transport belt. Reference numeral 40 denotes a holder made of quartz, on which a plurality of subassemblies 100 described with reference to FIG. 7 are mounted. A quartz holder, which has two concave portions which are long in the traveling direction and which are parallel to each other and which is mounted on the sub-assembly 100, is provided at a lower portion thereof.
The first ultraviolet irradiation or the second ultraviolet irradiation is performed by passing the quartz holder 40 between the fixed ultraviolet light irradiating devices, which are opposed to each other, on the ultraviolet irradiating surface side. 2 UV irradiation can be performed. 200 is an outer frame of the ultraviolet irradiation device,
A gas introduction unit 60 and a gas exhaust unit 61 are provided so that the atmosphere in the ultraviolet irradiation device can be variously changed.
As the atmospheric gas, air, oxygen, nitrogen, or the like is used. By continuously transporting the plurality of quartz holders 40 from right to left, it was possible to efficiently irradiate a large number of sub-assemblies 100 with ultraviolet light, thereby significantly improving mass productivity. FIG. 9 shows an example in which ultraviolet irradiation is performed simultaneously from above and below. However, in the present invention, even if ultraviolet irradiation is not performed simultaneously, ultraviolet irradiation is first performed from the upper part of the subassembly in the same manner as that shown in FIG. Later, irradiation may be performed from below.

FIG. 10 shows a modification of the rail shown in FIG. In FIG. 9, the description has been made using the rail 50 having a concave portion at the upper portion which is long in the traveling direction and is parallel to each other. However, in FIG. 10, a concave portion larger than the spherical ball is formed on the rail so that the ball 45 does not contact. When the balls 45 are arranged in this rail shape, the balls 45 do not rotate and move in the traveling direction, it is possible to prevent contact between the balls, and it is possible to move the holder 40 from right to left more smoothly. As a result, mass productivity was further improved.

According to the method of manufacturing a high breakdown voltage semiconductor device according to the present invention described in detail above, the rated voltage is 5 to 22 kV high-temperature bias test (the applied voltage is 80% of the rated voltage, the junction temperature is
The test was carried out at 125 or 150 ° C. for a test time of 1000 h), but it was confirmed that the leak current was increased by only 10% from the initial value, and the fluctuation of the breakdown voltage could be maintained at about ± 2%, indicating high reliability.

[0033]

As described above, according to the method of manufacturing a high-breakdown-voltage semiconductor device according to the present invention, a high-breakdown-voltage semiconductor device having a high breakdown voltage and a small leak current can be obtained, and can be realized by a manufacturing method excellent in mass productivity. .

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device formed by a method of manufacturing a high breakdown voltage semiconductor device according to the present invention.

FIG. 2 is an explanatory diagram of a method for forming a passivation film by a method for manufacturing a high breakdown voltage semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention, which is manufactured by the method of manufacturing a high withstand voltage semiconductor device, for each manufacturing process;

FIG. 4 is a cross-sectional view of a semiconductor device according to another manufacturing method of the high breakdown voltage semiconductor device according to the first embodiment of the present invention for each manufacturing process.

FIG. 5 is a sectional view showing a second embodiment of the semiconductor device formed by the method for manufacturing a high breakdown voltage semiconductor device of the present invention.

FIG. 6 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention, which is manufactured by the method of manufacturing a high withstand voltage semiconductor device according to the present invention.

FIG. 7 is a first configuration diagram of an ultraviolet irradiation apparatus used in the method for manufacturing a high withstand voltage semiconductor device of the present invention.

FIG. 8 is a second configuration diagram of an ultraviolet irradiation device used in the method of manufacturing a high withstand voltage semiconductor device according to the present invention.

FIG. 9 is a third configuration diagram of an ultraviolet irradiation apparatus used in the method for manufacturing a high withstand voltage semiconductor device of the present invention.

FIG. 10 is a diagram showing a modified example of a rail used in the method for manufacturing a high withstand voltage semiconductor device of the present invention.

[Explanation of symbols]

1 ... n-type semiconductor region, 2 ... p ⁺ -type semiconductor region, 3 ... n ⁺
Semiconductor region, 4 ... first passivation film, 5 ... second
Passivation film, 6 resin, 7 ozone, 8, 9 ...
UV irradiation lamp, 10 ... Diode pellet, 12,
DESCRIPTION OF SYMBOLS 13 ... 1st solder, 15 ... 2nd solder, 22 ... anode electrode, 23 ... cathode electrode, 30 ... conveyor belt, 40 ...
Holder, 45: Ball, 50, 51: Transport rail,
Reference numeral 60 denotes a gas introduction unit, 61 denotes a gas exhaust unit, 100 denotes a sub-assembly of a semiconductor device, and 200 denotes an outer frame of an ultraviolet irradiation device.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 23/31 H01L 23/30 C 21/329 29/91 B (72) Inventor Susumu Murakami 7-1 Omikacho, Hitachi City, Hitachi City, Ibaraki Prefecture No. 1 Hitachi, Ltd.Hitachi Research Laboratory (72) Inventor Kikuo Takahashi 3- 10-2 Bentencho, Hitachi City, Ibaraki Prefecture Within Hitachi Haramachi Electronics Co., Ltd. (72) Inventor ▲ Yoshi ▼ Katsunobu Hitachi, Ibaraki Prefecture Hitachi Haramachi Electronics Co., Ltd.

Claims (10)

[Claims] A first ultraviolet ray is irradiated on the exposed pn junction surface to form a silicon dioxide film serving as a first passivation film; a second passivation film is formed in contact with the first passivation film; A method for manufacturing a high-breakdown-voltage semiconductor device, characterized in that the semiconductor device is sealed. 2. A silicon dioxide film serving as a first passivation film is formed by irradiating an exposed pn junction surface with a first ultraviolet light, and a second ultraviolet light is formed after contacting the first passivation film to form a second passivation film. A method for manufacturing a high withstand voltage semiconductor device, which comprises irradiating and sealing with a molding resin. 3. The method according to claim 1, wherein the material of the second passivation film is a polyimide resin, and the material of the molding resin is an epoxy resin. 4. A far ultraviolet ray having a wavelength of the first ultraviolet ray of 199 nm or less, and a second ultraviolet ray having a wavelength of 200 nm or more and 400 nm or less.
4. The method for manufacturing a high breakdown voltage semiconductor device according to claim 1, wherein: 5. The method according to claim 5, wherein the first ultraviolet ray is applied to a first sub-assembly of the semiconductor device having an exposed pn junction and not having the first passivation film and the second passivation film formed thereon, or an exposed pn junction. The second subassembly of the semiconductor device having the first passivation film and the second passivation film formed thereon is mounted on a movable transport belt, and the two fixed ultraviolet irradiation devices facing each other are fixed. By moving the movable conveyor belt between the ultraviolet radiation surface side,
A method for manufacturing a high-breakdown-voltage semiconductor device, wherein the first ultraviolet irradiation or the second ultraviolet irradiation is performed. 6. A first sub-assembly of a semiconductor device having an exposed pn junction, wherein the first passivation film and the second passivation film are not formed, or an exposed pn junction is irradiated with the first ultraviolet ray. A second sub-assembly of the semiconductor device on which the first passivation film and the second passivation film formed are formed is mounted on a movable transport belt, and is provided at an arbitrary interval on the transport belt. The conveyor belt passes under the ultraviolet radiation surface side of one of the fixed ultraviolet irradiation devices,
Further, the first ultraviolet irradiation or the second ultraviolet irradiation is performed by allowing the conveyance belt to pass over the ultraviolet radiation surface side of another ultraviolet irradiation device fixed at an arbitrary interval below the conveyance belt. A method for manufacturing a high-breakdown-voltage semiconductor device, comprising performing irradiation. 7. A holder having two lower portions which are long in the traveling direction and are parallel to each other, a rail which is longer than the holder which opposes the concave portion and has an upper portion, and wherein the holder and the rail are spherical balls. A plurality of the first sub-assemblies or a plurality of the second sub-assemblies are mounted on a holder of a conveying device that is in contact with the carrier, and a space between the ultraviolet radiation surfaces of two fixed ultraviolet irradiation devices opposed to each other is fixed. By passing through the holder, the first
A method for manufacturing a high-breakdown-voltage semiconductor device, comprising performing ultraviolet irradiation or the second ultraviolet irradiation. 8. A holder having two lower portions which are long in the traveling direction and are parallel to each other, a rail which is longer than the holder which opposes the concave portion and has an upper portion, and wherein the holder and the rail are spherical balls. The plurality of first sub-assemblies or the plurality of second sub-assemblies are mounted on a holder of a transfer device that is in contact with the holder, and the holder is disposed below an ultraviolet radiation surface side of an ultraviolet irradiation device fixed at an arbitrary interval. And the first ultraviolet irradiation or the second ultraviolet irradiation is carried out by passing the holder on the ultraviolet radiation surface side of an ultraviolet irradiation device fixed at an arbitrary interval below the holder. A method for manufacturing a high-breakdown-voltage semiconductor device, comprising: 9. The method according to claim 7, wherein a concave portion larger than the spherical ball is formed on the rail, and the ball is arranged on the rail, and the ball rotates and does not move in the traveling direction. Item 10. A method for manufacturing a high withstand voltage semiconductor device according to item 8. 10. The method for manufacturing a high breakdown voltage semiconductor device according to claim 7, wherein the material of said holder, rail and ball is quartz.