WO2007023834A1 - Composition adhésive - Google Patents

Composition adhésive Download PDF

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Publication number
WO2007023834A1
WO2007023834A1 PCT/JP2006/316458 JP2006316458W WO2007023834A1 WO 2007023834 A1 WO2007023834 A1 WO 2007023834A1 JP 2006316458 W JP2006316458 W JP 2006316458W WO 2007023834 A1 WO2007023834 A1 WO 2007023834A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive composition
composition according
ethyl
adhesive
methyl
Prior art date
Application number
PCT/JP2006/316458
Other languages
English (en)
Japanese (ja)
Inventor
Takahiro Matsuse
Hideki Kitano
Masami Aoki
Original Assignee
Bridgestone Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgestone Corporation filed Critical Bridgestone Corporation
Priority to JP2007532143A priority Critical patent/JPWO2007023834A1/ja
Publication of WO2007023834A1 publication Critical patent/WO2007023834A1/fr

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305Affixing by adhesive
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/71Monoisocyanates or monoisothiocyanates
    • C08G18/711Monoisocyanates or monoisothiocyanates containing oxygen in addition to isocyanate oxygen
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/293Organic, e.g. plastic
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Definitions

  • the present invention relates to an adhesive composition (hereinafter, also simply referred to as “composition”), and more particularly to an adhesive composition that is suitably used for mounting various electronic components such as an IC package.
  • Underfill is sufficient to penetrate and cure between IC chip substrates, to ensure connection reliability against stresses such as heat and external load, and to satisfy desired electrical characteristics, etc.
  • thermosetting resins such as epoxy resins are most commonly used.
  • a technique using an anisotropic conductive material in which a conductive filler is uniformly dispersed in a resin is also known (for example, , Described in Patent Documents 1 and 2).
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-292827 (Claims)
  • Patent Document 2 JP 2004-256650 A (Claims)
  • thermocompression treatment is performed at a high temperature of 100 ° C or more for several tens of seconds in the mounting process or heat treatment process.
  • the electronic component body may be damaged.
  • the connection part contains high internal stress. Insufficient power, causing problems with electrical characteristics and long-term durability It was. Accordingly, there has been a demand for the realization of a material that does not need to be subjected to a high temperature and enables a low-temperature and short-time connection process when applied to mounting electronic components.
  • an object of the present invention is to provide sufficient adhesiveness for mounting electronic components, satisfy desired electrical characteristics and long-term durability, and be used in conventional thermosetting resin. It is to provide an adhesive composition that has no problems.
  • the first adhesive composition of the present invention includes a photoacid generator, 380-: a dye having absorption at LOOOnm, and a photopower thione polymerization system composition, and includes visible light or near-infrared light.
  • a photoacid generator 380-: a dye having absorption at LOOOnm
  • a photopower thione polymerization system composition and includes visible light or near-infrared light.
  • the second adhesive composition of the present invention includes a radical generator, 380-: a dye having absorption at LOOOnm, and a photoradical polymerization composition, and is capable of visible light or near-infrared light.
  • the adhesive composition of the present invention can be suitably used as a film or paste.
  • the adhesive composition of the present invention preferably contains a photosensitizer that preferably contains a conductive filler.
  • the adhesive composition of the present invention can be suitably used as an underfill in flip chip mounting or an adhesive for connecting one electrode to another.
  • an adhesive composition that has sufficient adhesiveness and satisfies desired electrical characteristics and long-term durability.
  • it can be cured by irradiation with visible light or near-infrared radiation, adverse effects due to heat can be eliminated, and even when there is an opaque part with a high degree of concealment, it can be cured reliably. It is possible to do this.
  • visible to near-infrared light used for curing has less adverse effects on the human body than light in the ultraviolet region, and is highly safe, thick, There are also merits such as being able to cure in area.
  • the resin composition is affected by white light. However, in the case of curing in the early modern outside line region, the effect of white light is small, so that the handling property is good.
  • FIGS. 1A and 1B are schematic cross-sectional views showing one embodiment of flip-chip mounting.
  • FIG. 2 is a schematic sectional view of electrode-electrode connection.
  • the first photocurable resin composition of the present invention comprises a photoacid generator, a dye having absorption at 380 to 1000 nm, and a photopower thione polymerization composition, and is irradiated with visible light or near infrared light.
  • An adhesive composition that generates acid and initiates a cationic polymerization reaction to cure, and is used for mounting electronic components. In this case, electron transfer occurs between the dye that has absorbed near infrared rays and the photoacid generator, and the photoacid generator generates an acid.
  • Examples of the dye having absorption in the visible region (approximately 380 to 760 nm) used in the present invention include, for example, ketocoumarin-based dyes such as 3, 3 ', 4, 4, -carborubbis 7- (jetylamino) coumarin.
  • examples of the dye having absorption in the near-infrared region include, for example, powers such as pyrylium, thiopyrylium, cyanine, indolium, and triazine. It is not something.
  • These dyes may be used singly or in combination of two or more.
  • the adhesive composition of the present invention usually 0.1 to 20% by mass, particularly 1 to 10% by mass. It can be contained in%.
  • photoacid generators include 1,2 naphthoquinone-2 diazido 5-sulfonic acid chloride, 1,2 naphthoquinone 1-2 diazido 1-5-sulfonic acid sodium, 1,2 naphthoquinone 1-2 diazido 5-sulfone Potassium acid, 1, 2 Naphthoquinone-2-diazido 5-methyl sulfonate 1, 2-naphthoquinone 2-diazido 5-ethyl sulphonate 1, 2, naphthoquinone-2 diazido 5-sulphonic acid prill, 1, 2 naphthoquinone-2 di Azido 5-cetyl sulfonate, 1,2 naphthoquinone 1-2 diazido 4-sulfonic acid chloride, 1, 2 naphthoquinone 1-2 diazide 4- sodium sulfonate, 1, 2-naphthoquinone 2 diazide 4- sodium
  • Aliphatic diols such as ethylene glycol, 1,3 propanediol, 1,6 hexanediol, 1,10-decanediol, 1,16 hexadecanediol and 1,2 naphthoquinone 1-2 diazido 4 (or 1 5) —Condensates with sulfonic acid chlorides, condensed aromatics such as phenol, hydroquinone, catechol, resorcinol, pyrogallol, etc.
  • 1, 2 —naphthoquinone-2-diazide-4 (or 15) sulfonic acid chloride 2 , 3, 4 trihydroxybenzophenone, 2, 2 ', 4, 4'-tetrahydroxybenzophenone, 2, 2,, 3, 4, 4' pentahydroxybenzophenone, and other polyhydroxybenzophenones 1, 2-naphthoquinone 2 diazide 4 (or 5) sulfonic acid chloride, for example, trihydroxybenzophenone di (1, 2 naphthoquinone-2-diazide 4-sulfonic acid) ester, trihydroxybenzophenone tri (1, 2 naphthoquinone-2-diazide-1-4-sulfonic acid) ester, tetrahydroxybenzophenone di (1,2-naphthoquinone-1-2-diazide-1-4-sulfonic acid) Esters, tetrahydroxybenzophenone tri (1,2 naphthoquinone
  • a group force consisting of allyldiazo-um salt, gallo-rhodonium salt, triarylsulfomum salt, dialkylphenacylsulfomum salt and sulfonate compound is also selected.
  • Any one or more photoacid generators are used.
  • a photoacid generator that generates Bronsted acid or Lewis acid by irradiation with visible light or near infrared light is preferable.
  • Photoacid generator, in the adhesive composition of the present invention usually 0.1 to 20% by weight, in particular can be contained 1-10 wt 0/0 ⁇ trowel.
  • examples of the photothion polymerization composition include a polymerizable monomer having one oxetane ring, and specific examples thereof include 3-ethyl-3-hydroxymethyloxetane, 3- ( (Meth) allyloxymethyl-3-ethyloxetane, (3-ethyl-3-oxeta-lmethoxy) methylbenzene, 4-fluoro [1- (3-ethyl-3-oxetal-methoxy) methyl] benzene, 4-methoxy- [1 (3 Ethyl-3-oxetamethyl) methyl] benzene, [1 (3-ethyl-3-oxeta-methoxy) ethyl] ether, isobutoxymethyl (3-ethyl-3-oxeta-methyl) ether, isovoloxyl --Ethyl-3-oxeta-methyl) ether, isobutyl (3-ethyl-3-hydroxymethyloxe
  • polymerizable monomers having two oxetane rings include 1,4 bis ⁇ [(3 ethyl-3-oxeta-l) methoxy] methyl ⁇ benzene, bis ⁇ [((1 ethyl) 3-oxetal-].
  • polymerizable monomer having 3 to 5 tan rings include trimethylolpropane tris (3-ethyl-3-oxeta-methyl) ether, pentaerythritol tris (3-ethyl-3-oxetanylmethyl) ether. , Pentaerythritol tetrakis (3-ethyl-3-oxeta-methyl) ether, dipentaerythritol pentakis (3-ethyl 3-oxeta-methyl) ether, and the like.
  • examples of glycidyl ether type epoxy compounds include di- or polyglycidyl of polyvalent phenols having an aromatic nucleus or an alkylene oxide adduct thereof. And di- or polyglycidyl ethers of ethers, aliphatic polyhydric alcohols or alkylene oxide adducts thereof.
  • Polyglycidyl ethers diglycidyl ethers of alkylene glycols such as ethylene glycol, propylene glycol, 1,4 butanediol, 1,6 hexanediol, or alkylene oxide adducts thereof; dialkyl ethers of polyalkylene glycols such as polyethylene glycol and polypropylene glycol Glycidyl ether; neopentyl glycol, dibumonone neopentyl glycol, or diglycidyl ether with an alkylene oxide of these glycols; trimethylol ether , Trimethylolpropane, glycerin, or di- or triglycidyl ethers of alkylene oxides
  • alicyclic epoxy compound for example, a compound having a cycloalkane ring such as cyclohexene or cyclopentene ring is epoxyized with an appropriate oxidizing agent such as hydrogen peroxide or peracid. And cyclohexene oxide-containing compounds containing cyclopentene oxide.
  • Epoxycyclohexylmethyl) ether ethylene bis (3,4-epoxycyclohexanecarboxylate), epoxidized tetrabenzyl alcohol, latataton modified 3, 4 epoxycyclohexenoremethinole 3 ', 4' Examples thereof include epoxycyclohexanecanolevoxylate, latatatone-modified epoxidized tetrahydrobenzyl alcohol, and cyclohexene oxide.
  • a spiro ortho carbonate compound can also be used as the photopower thione polymerization composition.
  • the light-power thione polymerization composition can be contained in the resin composition of the present invention in an amount of usually 10 to 90% by mass, particularly about 50 to 90% by mass.
  • photoacid generators include, for example, UVI-6950, UVI-6970 (bis [4 (di (2-hydroxyethyl) sulfuro) sulfo-)-phenylsulfide, manufactured by Union Carbide Corporation. ], UVI 6974 (Bis [4-diphenylsulfo-phenol] sulfide bishexafluoroantimonate and diphenyl 4-thiophenoxyphenylsulfo-muhexafluoroantimonate ), UVI—6990 (UVI6974 hexafluorophosphate salt), Adeka Optomer made by Asahi Denki Kogyo Co., Ltd.
  • the second photocurable resin composition of the present invention comprises a radical generator, 380-: a dye having absorption in LOOOnm, and a photoradical polymerization composition, and visible light.
  • a radical generator 380-: a dye having absorption in LOOOnm
  • a photoradical polymerization composition e.g., a photoradical polymerization composition
  • visible light e.g., a visible light
  • it is an adhesive composition that starts and cures when exposed to near-infrared rays and is used for mounting electronic components.
  • electron transfer occurs between the dye that absorbs near infrared rays and the radical generator, and radicals are generated.
  • the same dyes as described above can be used, and the blending amount is usually 0.1 to 20% by mass. In particular, 1 to: L0% by mass can be achieved.
  • radical generators radiation photopolymerization initiators
  • organic peroxides bisimidazoles, iodine salts, polyhalogen compounds, titanocenes, borates, sulfonic acid derivatives, and N-phenyldaricin power groups
  • Any one or more selected from force can be suitably used.
  • examples of the salt include pheo-di-ordinium salt, bis (p-phlogo-fuel) oddonium salt, digly-rhodonium salt, bis (p-t-butyl-felt) ododonium salt, bis ( m--trofeol) Jodonium salt, etc.
  • counterions include chloride, bromide, tetrafluoroborate, hexafluorophosphate, trifluoromethane sulfate, etc., respectively.
  • radical photopolymerization initiators include, for example, 2-hydroxy-1,2-methyl-1-phenylpropane 1-one, 1-hydroxycyclohexyl phenyl ketone, 2-methyl 1 1 (4 (methylthio) phenol) 2
  • Acetophenones such as morpholinopropane 1, benzoins such as benzyldimethyl ketal, benzophenones such as benzophenone, 4-phenylbenzophenone and hydroxybenzophenone, isopropyl Methylphenol glyoxylate and the like can be used as thixanthone series such as norethixanthone, 2-4 jetylthioxanthone, acylphosphine oxide, and other special ones.
  • radical photopolymerization initiators may be optionally combined with one or more known photopolymerization accelerators such as benzoic acid-based compounds such as 4-dimethylaminobenzoic acid or tertiary amine amines. Can be mixed and used. Only one radical photopolymerization initiator can be used, or a mixture of two or more can be used.
  • the radical photopolymerization initiator is preferably contained in the adhesive composition of the present invention in an amount of usually 0.1 to 20% by mass, particularly 1 to L0% by mass.
  • radical photopolymerization initiators as the acetophenone photopolymerization initiator, for example, 4-phenoxydichloroacetophenone, 4-t-butylmonodichloroacetophenone, 4-t —Butyl monotrichloroacetophenone, diethoxyacetophenone, 1— (4-isopropylpropyl) 2 hydroxy-2-methylpropane-1-one, 1— (4 dodecylphenyl) 2 hydroxy-2-methylpropane 1-one, 4- (2 hydroxyethoxy) -phenol (2-hydroxy-1-propyl) ketone, and the like.
  • Benzophenone-based photopolymerization initiators include benzoylbenzoic acid and benzoylbenzoic acid in addition to the above. Examples include methyl acid, 4-benzoyl 4'-methyldiphenyl sulfide, 3,3,1-dimethyl-4-methoxy benzophenone, and the like.
  • Examples of the acyl phosphine oxide include compounds such as 2,4,6 trimethylbenzoyl diphosphine phosphine oxide and bis (2,6 dimethoxybenzoyl) -2,4,4 trimethyl-pentylphosphine oxide. Can be mentioned.
  • acetophenone-based photopolymerization initiators in particular, 2-hydroxy-2-methyl-1-phenylpropane 1-one, 1-hydroxycyclohexyl phenyl ketone, 2-methyl Lou 1 (4 (methylthio) phenol) 2 Morpholinopropane 1 is preferred.
  • benzophenone photopolymerization initiators benzophenone, benzoylbenzoic acid, and methyl benzoylbenzoate are preferable.
  • tertiary ethanolamine photopolymerization accelerators include triethanolamine, methyljetanolamine, triisopropanolamine, 4,4, -dimethylaminobenzophenone, 4,4, -jetylaminobenzophenone, 2dimethylaminobenzoate.
  • ethyl 4-ethylaminobenzoate, 4-dimethylaminobenzoate (n-butoxy) ethyl, isoamyl 4-dimethylaminobenzoate, 2-dimethylhexyl 4-dimethylaminobenzoate, and the like can be used.
  • examples of the photopolymerization accelerator include ethyl 4-dimethylaminobenzoate, 4-dimethylaminobenzoate (n-butoxy) ethyl, isoamyl 4-dimethylaminobenzoate, 2-ethylaminobenzoate 4-dimethylaminobenzoate, and the like.
  • the photopolymerization initiator can be combined with components.
  • the photo-radical polymerization composition utilizes a radical polymerization reaction of an unsaturated double bond, and mainly comprises a monomer or oligomer having a photo-polymerizable functional group, and is reactive as required.
  • Polymer may be added.
  • a binder resin can be added to adjust the viscosity.
  • the non-oxidized resin can be used without limitation as long as it can be mixed with a photo-curing resin and does not have a large absorption in the near infrared region.
  • Examples of the reactive polymer having a photopolymerizable functional group include alkyl acrylate (eg, methyl acrylate, ethyl acrylate, butyl acrylate, 2-ethyl hexyl acrylate) and Z or alkyl methacrylate.
  • alkyl acrylate eg, methyl acrylate, ethyl acrylate, butyl acrylate, 2-ethyl hexyl acrylate
  • Z or alkyl methacrylate eg, methyl acrylate, ethyl acrylate, butyl acrylate, 2-ethyl hexyl acrylate
  • Homopolymers or copolymers namely, acrylic resin obtained from a rate (methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-ethyl hexyl methacrylate, etc.)
  • examples thereof include those having a photopolymerizable functional
  • Such a polymer is, for example, a copolymer of one or more types of (meth) acrylate and (meth) acrylate (such as 2-hydroxychetyl (meth) acrylate) having a functional group such as a hydroxyl group. It can be obtained by reacting the obtained polymer with a compound having a photopolymerizable group and reacting with a functional group of the polymer, such as isocyanatoalkyl (meth) acrylate. Therefore, an acrylic resin having a photopolymerizable functional group via a urethane bond is preferred.
  • the photo-radical polymerization composition can be contained in the adhesive composition of the present invention in an amount of usually 10 to 90% by mass, particularly 50 to 90% by mass.
  • it preferably includes a radical photopolymerization composition having at least one ethylenically unsaturated double bond.
  • the adhesive composition of the present invention can be suitably used in the form of a film or a paste, and, as long as it does not impair the effects of the present invention, as other additives, if desired, Solvents, antioxidants, plasticizers, and other components such as solvents, antioxidants, anti-aging agents, thixotropic agents, plasticizers, colorants (dyes), and processing aids. May be.
  • a conductive filler in the composition of the present invention.
  • the composition containing the conductive filler By interposing the composition containing the conductive filler between the electrodes, conduction can be achieved through the composition.
  • the surface of the conductive filler may be coated with a resin, it becomes an insulator in a normal state and can be electrically connected by being compressed and crushed between the electrodes.
  • a strong conductive filler various types can be used as long as they are electrically good conductors.
  • a metal or alloy powder such as copper, silver, nickel, or gold, or a resin or ceramic powder coated with these metal or alloy can be used.
  • the shape can be any shape such as flake shape, dendritic shape, granular shape, pellet shape, and the like.
  • the conductive filler is preferably one having an elastic modulus of 1. OX 10 7 to 1. OX 10 1Q Pa.
  • OX 10 7 to 1. OX 10 1Q Pa the adherend will be cracked or elastically deformed after pressing. It is recommended to use a conductive filler in the above elastic modulus range because there is a possibility that stable conduction performance cannot be obtained due to the occurrence of springback due to recovery. This prevents damage to the adherend, suppresses the occurrence of springback due to recovery of elastic deformation of the particles after crimping, increases the contact area of the conductive filler, and is more stable. Highly reliable conduction performance can be obtained.
  • the elastic modulus is less than 1. OX 10 7 Pa, the particles themselves may be damaged and the conduction characteristics may be degraded. 1. If it is greater than OX 10 1Q Pa, springback may occur. .
  • a conductive filler one in which the surface of the plastic particles having the above elastic modulus is coated with the aforementioned metal or alloy is preferably used.
  • the blending amount of the conductive filler in the composition is preferably 0.1 to 15% by volume with respect to the base resin (light power thione polymerization composition or photo radical polymerization composition).
  • the average particle size of the conductive filler is preferably 0.1 to: LOO / zm.
  • the viscosity at around room temperature is preferably 1 to 1000 Pa's, particularly 10 to 500 Pa's. Therefore, it is desirable to appropriately adjust the blending amounts of the photopolymerizable composition and various additives so that such a viscosity can be obtained.
  • the adhesive composition of the present invention can be cured by irradiation with visible light or near-infrared rays, and the light source that can be used for curing in the present invention emits visible light or near-infrared light.
  • the light source that can be used for curing in the present invention emits visible light or near-infrared light.
  • semiconductor lasers laser diodes, LEDs (Light Emitting Diodes), halogen lamps, VCSEL (Vertical
  • curing can be promoted by heating as necessary after irradiation with visible light or near infrared rays.
  • the irradiation time depends on the type and intensity of the light source – it cannot be roughly determined, but it should be several seconds to several tens of minutes.
  • the temperature Prior to curing, the temperature is about room temperature to about 50 ° C. It is also preferable to perform temporary pressure bonding by applying a pressure of about 0.1 MPa to 1.5 MPa at a temperature.
  • the adhesive composition of the present invention can contain a known UV-curable resin composition that is cured by irradiation with UV light and is not particularly limited.
  • the adhesive composition of the present invention containing an ultraviolet ray curable resin composition component is characterized by being curable with visible light, near infrared rays and ultraviolet rays.
  • the refractive index power of the cured product by irradiation with visible light or near infrared light is preferably higher than the refractive index of the cured product by irradiation with ultraviolet rays.
  • the pigment it is decomposed by irradiation with ultraviolet rays, It is preferable to use a material that decreases the absorption in the near infrared region.
  • the adhesive composition of the present invention can be prepared in a paste form by dissolving and dispersing the photopolymerizable composition and the various additives described above in a solvent in a predetermined combination. It can be filled and applied or injected. Specifically, for example, in the flip chip mounting in which the electrode 1 on the substrate 11 and the BGA (Ball Grid Array) mounting chip 12 are mounted by reflow through the solder bumps 2 as shown in FIG. Then, after mounting, the paste 11 is injected into the gap between the substrate 11 and the chip 12 as an underfill and cured, and the substrate 11 can be sealed as shown in FIG.
  • BGA All Grid Array
  • the thickness of the paste-like composition in the case of application is not particularly limited !, but can be, for example, in the range of 5 to: L00 m and matched to the thickness of the opposing electrode. Thus, the thickness can be appropriately controlled.
  • the adhesive composition of the present invention comprises a photopolymerizable composition and the above-mentioned various additives that are uniformly mixed in a predetermined composition and kneaded with an extruder, a roll, etc.
  • a film can be prepared by forming a film into a predetermined shape by a film forming method such as die extrusion or inflation.
  • a film-like film can be formed by dissolving or dispersing the compounding components of the adhesive composition in a solvent, applying it to the surface of the separator, and then evaporating the solvent. In the film formation, embossing force may be applied for the purpose of preventing blocking and facilitating the pressing with the adherend.
  • the film-like composition of the present invention includes, for example, a BGA (Ball Grid Array) mounting chip 12 on which an electrode 1 and an Au ⁇ t bump 3 are formed on a substrate 11 as shown in FIG. 1 (b). Mounted by thermocompression bonding The flip-chip mounting can be applied, and sealing can be performed by performing pressure bonding in a state where the film-like composition 10 is placed on the substrate.
  • COF Chip On Flex (Film)
  • COB Chip On Board
  • COG Chip On Glass
  • FOF Flux On Flex
  • FOB Felex On Board
  • FOG Felex On Glass
  • the thickness of the film composition is not particularly limited, but can be, for example, about 5 to 100 m, and the thickness can be appropriately controlled according to the thickness of the opposing electrode. it can.
  • polyester resin shown in Table 1 below is dissolved in a mixed solvent of toluene and methylethylketone to prepare a 40% by weight solution. These components were mixed in the amounts shown in the table, and this was applied onto poly (ethylene terephthalate) as a separator with a bar coater to obtain an anisotropic conductive finolem having a width of 2 mm and a thickness of 35 ⁇ m.
  • the obtained film was attached to a non-adhesive type two-layer polyimide flexible printed circuit board and a polyethylene terephthalate (PET) printed circuit board using silver paste as a counter electrode, and the separator was peeled off. Positioning was performed with a monitor, and temporary pressure bonding was performed at 0.5 MPa for 1 second at 50 ° C.
  • PET polyethylene terephthalate
  • IR irradiation ASAHI SPECTRA xenon light source, LAX-102, IR mirror module through the quartz glass serving as the crimping table while crimping at 50 ° C for 60 seconds under the condition of 2MPa.
  • Use and transmission wavelength range of 700-120 nm were performed for the same time.
  • the obtained sample was subjected to a 90 ° peel test (50 mmZmin) using a tensile tester. The adhesive strength was measured. The connection resistance between the opposing wiring patterns was measured with a digital multimeter. Furthermore, the insulation resistance between adjacent wiring patterns (300 m pitch) was measured with an ultrahigh resistance meter. These results are also shown in Table 1 below.
  • a nonconductive film was prepared by the same production method as in Example 1-1, except that the conductive particles were not blended. Using the obtained film, the same substrate as in Example 1-1 was used.
  • IR irradiation (ASAHI SPECTRA xenon light source, LAX-102, IR mirror module through the quartz glass serving as the crimping table through crimping at 3MPa for 60 seconds at 50 ° C. Use and transmission wavelength range of 700-120 nm) were performed for the same time.
  • the anisotropic conductive films and non-conductive films of the examples as the adhesive composition of the present invention may be remarkably excellent in adhesiveness, conductivity, and insulation. It was confirmed.
  • the polyester resin shown in Table 2 below is dissolved in a methyl ethyl ketone solvent to prepare a 65 wt% solution, and the remaining components in Table 2 are expressed with respect to 100 parts by weight of the polyester resin solution.
  • An anisotropic conductive paste was obtained by mixing with three rolls in the amount shown in the figure.
  • the obtained paste is drawn on a polyterephthalate (PET) printed circuit board using silver paste as an electrode, and is adhesive-free. Positioned with a monitor for bonding to a 2-layer polyimide flexible printed circuit board, and temporarily crimped at 0.5 MPa for 1 second at 50 ° C
  • IR irradiation (ASAHI SPECTRA xenon light source, LAX-102, IR mirror module through the quartz glass serving as the crimping table through crimping at 2MPa for 60 seconds at 50 ° C. Use and transmission wavelength range of 700-120 nm) were performed for the same time.
  • the obtained sample was subjected to a 90 ° peel test (50 mmZmin) using a tensile tester. The adhesive strength was measured. The connection resistance between the opposing wiring patterns was measured with a digital multimeter. Furthermore, the insulation resistance between adjacent wiring patterns (300 m pitch) was measured with an ultrahigh resistance meter. These results are also shown in Table 2 below.
  • a non-conductive paste was prepared by the same manufacturing method as Example 2-1 except that the conductive particles were not blended. Using the obtained paste, the same examples as those in Example 2-1 were used.
  • Temporary pressure bonding was performed under the same conditions as in 2-1.
  • IR irradiation (ASAHI SPECTRA xenon light source, LAX-102, IR mirror module through the quartz glass serving as the crimping table through crimping at 3MPa for 60 seconds at 50 ° C. Use, transmission wavelength range 700-: 1020 nm) was performed at the same time.
  • Adhesive strength (N / m (gf / cm)) 519 (530) 549 (560) ⁇ Connection resistance ( ⁇ ) 2 3
  • Adhesive strength connection strength. Adhesive strength. Connection resistance, comprehensive evaluation

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  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesive Tapes (AREA)
  • Polymerisation Methods In General (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

L’invention concerne une composition adhésive exempte des problèmes rencontrés dans les résines thermodurcissables conventionnelles tout en présentant une adhérence suffisante pour le montage de composants électroniques, des caractéristiques électriques désirées et une durabilité à long terme. Elle porte spécifiquement sur une composition adhésive contenant un générateur photoacide, une teinture ayant une absorption dans une fourchette de 380-1000 nm et une composition photopolymérisable de manière cationique. Cette composition adhésive génère un acide et lance une réaction de photopolymérisation cationique après irradiation avec une lumière visible ou proche de l’infrarouge, durcissant ainsi. Elle concerne également une composition adhésive contenant un générateur radical, une teinture ayant une absorption dans une fourchette de 380-1000 nm et une composition photopolymérisable radicalement. Cette composition adhésive est durcie par le lancement d’une réaction de polymérisation radicale après irradiation avec une lumière visible ou proche de l’infrarouge. Ces compositions adhésives s’utilisent pour le montage de composants électroniques.
PCT/JP2006/316458 2005-08-23 2006-08-23 Composition adhésive WO2007023834A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044678A1 (fr) * 2007-10-05 2009-04-09 Hitachi Chemical Company, Ltd. Matériau de connexion de circuit, structure de connexion de circuit, et leur procédé de fabrication
JP2009105361A (ja) * 2007-10-05 2009-05-14 Hitachi Chem Co Ltd 回路接続材料、接続構造体及びその製造方法
WO2010036307A2 (fr) * 2008-09-24 2010-04-01 Eastman Kodak Company Couche de barrière thermique pour la fabrication de circuits intégrés
WO2011092950A1 (fr) * 2010-01-27 2011-08-04 富士フイルム株式会社 Composition polymérisable pour réserve de soudure et procédé de formation d'un motif de réserve de soudure
JP2012188463A (ja) * 2011-03-08 2012-10-04 Hitachi Chemical Co Ltd 半導体用接着剤組成物、半導体装置及び半導体装置の製造方法
WO2015137008A1 (fr) * 2014-03-11 2015-09-17 デクセリアルズ株式会社 Adhésif conducteur anisotrope, procédé de production d'un connecteur et procédé de connexion d'un composant électronique
WO2016117631A1 (fr) * 2015-01-21 2016-07-28 株式会社スリーボンド Composition photodurcissable
CN107112253A (zh) * 2015-01-13 2017-08-29 迪睿合株式会社 凸点形成用膜、半导体装置及其制造方法以及连接构造体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10316959A (ja) * 1997-03-19 1998-12-02 Sekisui Chem Co Ltd 硬化型粘接着剤組成物及び硬化型粘接着シート
JP2002030105A (ja) * 2000-07-18 2002-01-31 Taiyo Ink Mfg Ltd 可視光硬化性樹脂組成物
JP2002201264A (ja) * 2000-12-28 2002-07-19 Showa Denko Kk 封止樹脂用組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10316959A (ja) * 1997-03-19 1998-12-02 Sekisui Chem Co Ltd 硬化型粘接着剤組成物及び硬化型粘接着シート
JP2002030105A (ja) * 2000-07-18 2002-01-31 Taiyo Ink Mfg Ltd 可視光硬化性樹脂組成物
JP2002201264A (ja) * 2000-12-28 2002-07-19 Showa Denko Kk 封止樹脂用組成物

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105361A (ja) * 2007-10-05 2009-05-14 Hitachi Chem Co Ltd 回路接続材料、接続構造体及びその製造方法
WO2009044678A1 (fr) * 2007-10-05 2009-04-09 Hitachi Chemical Company, Ltd. Matériau de connexion de circuit, structure de connexion de circuit, et leur procédé de fabrication
WO2010036307A2 (fr) * 2008-09-24 2010-04-01 Eastman Kodak Company Couche de barrière thermique pour la fabrication de circuits intégrés
WO2010036307A3 (fr) * 2008-09-24 2010-08-19 Eastman Kodak Company Couche de barrière thermique pour la fabrication de circuits intégrés
US8361840B2 (en) 2008-09-24 2013-01-29 Eastman Kodak Company Thermal barrier layer for integrated circuit manufacture
US9389505B2 (en) 2010-01-27 2016-07-12 Fujifilm Corporation Polymerizable composition for solder resist, and solder resist pattern formation method
WO2011092950A1 (fr) * 2010-01-27 2011-08-04 富士フイルム株式会社 Composition polymérisable pour réserve de soudure et procédé de formation d'un motif de réserve de soudure
JP2012003225A (ja) * 2010-01-27 2012-01-05 Fujifilm Corp ソルダーレジスト用重合性組成物及びソルダーレジストパターンの形成方法
JP2012188463A (ja) * 2011-03-08 2012-10-04 Hitachi Chemical Co Ltd 半導体用接着剤組成物、半導体装置及び半導体装置の製造方法
JP2015172109A (ja) * 2014-03-11 2015-10-01 デクセリアルズ株式会社 異方性導電接着剤、接続体の製造方法及び電子部品の接続方法
WO2015137008A1 (fr) * 2014-03-11 2015-09-17 デクセリアルズ株式会社 Adhésif conducteur anisotrope, procédé de production d'un connecteur et procédé de connexion d'un composant électronique
CN106062118A (zh) * 2014-03-11 2016-10-26 迪睿合株式会社 各向异性导电粘接剂、连接体的制造方法及电子部件的连接方法
CN107112253A (zh) * 2015-01-13 2017-08-29 迪睿合株式会社 凸点形成用膜、半导体装置及其制造方法以及连接构造体
WO2016117631A1 (fr) * 2015-01-21 2016-07-28 株式会社スリーボンド Composition photodurcissable
JPWO2016117631A1 (ja) * 2015-01-21 2017-11-02 株式会社スリーボンド 光硬化性組成物

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