WO2006134717A1 - Laser à semi-conducteurs de nitrure et son procédé de fabrication - Google Patents

Laser à semi-conducteurs de nitrure et son procédé de fabrication Download PDF

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Publication number
WO2006134717A1
WO2006134717A1 PCT/JP2006/307771 JP2006307771W WO2006134717A1 WO 2006134717 A1 WO2006134717 A1 WO 2006134717A1 JP 2006307771 W JP2006307771 W JP 2006307771W WO 2006134717 A1 WO2006134717 A1 WO 2006134717A1
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Prior art keywords
nitride semiconductor
electrode
resist mask
insulating layer
waveguide
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PCT/JP2006/307771
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English (en)
Japanese (ja)
Inventor
Susumu Ohmi
Takeshi Kamikawa
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Sharp Kabushiki Kaisha
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Priority to JP2007521207A priority Critical patent/JP4917031B2/ja
Publication of WO2006134717A1 publication Critical patent/WO2006134717A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • Nitride semiconductor laser device and manufacturing method thereof Nitride semiconductor laser device and manufacturing method thereof
  • the present invention relates to a nitride semiconductor laser device having a high manufacturing yield and high reliability of a cavity end face, and a method for manufacturing the same.
  • a nitride semiconductor laser device having a ridge stripe-shaped waveguide, a waveguide formed on the upper surface of a nitride semiconductor laminated portion formed on a substrate, and an insulation provided with an opening on the upper surface of the waveguide
  • an electrode is formed on the nitride semiconductor multilayer portion through the protective protective film.
  • FIG. 23 is a cross-sectional view of the nitride semiconductor laser device 100 cut in a direction perpendicular to the convex stripe (ridge stripe) waveguide region 115, that is, in a direction parallel to the resonance surface. It is.
  • the nitride semiconductor laser device 100 includes an n-type crack prevention layer 107, an n-type cladding layer 108, an optical guide layer 109, an active layer 110, a p-type cap layer 111, on a nitride semiconductor substrate 106 exhibiting n-type conductivity.
  • a light guide layer 112, a p-type cladding layer 113, and a p-type contact layer 114 are stacked, and a part of the nitride semiconductor substrate 106 is etched to form a convex stripe-shaped waveguide region 115. Yes.
  • a first protective film 104 having an opening on the upper surface of the waveguide region 115 is formed on the upper surface of the nitride semiconductor substrate 106 and the side surface of the waveguide region 115 as an insulating protective film.
  • the p-type electrode 101 and the vicinity thereof are covered with a p-type electrode 101, and a second protective film 105 is formed on a portion other than the p-type electrode 101 on the upper surface of the nitride semiconductor substrate 106.
  • a pad electrode 102 is formed on the substrate!
  • Patent Document 1 JP-A-11-330610 (Page 5, Figure 1)
  • This conventional nitride semiconductor laser device 100 is formed by cleaving the nitride semiconductor substrate 106. A resonator end face is produced. At this time, the first protective film 104 and the second protective film 105 are also cracked, but these insulating protective films are hard and brittle, and fine fragments are generated. That is, the first protective film 104 and the second protective film 105 serve as a dust generation source. If these fragments adhere to the laser emission point at or near the resonator end face, the light emission characteristics of the nitride semiconductor laser device 100 will be abnormal, resulting in a defective product. Become.
  • the coat film formed on the cleavage plane when driven is generated by the oscillation light. It is activated to increase reactivity.
  • SiO is used as an insulating protective film
  • the Si of the insulating protective film and A1 and Hf of these films form a eutectic. Therefore, when this nitride semiconductor laser device is continuously driven and the temperature of the cavity end face rises, for example, when it reaches 100 ° C. or higher, this eutectic is formed in the coating film, so that these films are reflected.
  • the rate may deviate significantly from the design value, and the laser drive characteristics may vary accordingly.
  • the present invention provides a nitride semiconductor laser in which no fragments are generated from the insulating protective film when the nitride semiconductor substrate is cleaved, the manufacturing yield is good, and the resonator end face has high reliability.
  • An object is to provide an apparatus and a method for manufacturing the same.
  • the present invention provides a substrate, a nitride semiconductor stacked portion in which a plurality of nitride semiconductor layers are stacked on the substrate, and a ridge stripe-shaped waveguide is provided;
  • a nitride semiconductor comprising: an insulating layer formed on the nitride semiconductor stacked portion and having an opening above the waveguide; and a first electrode provided on the waveguide and the insulating layer.
  • the present invention provides the semiconductor laser device having the above configuration, wherein the waveguide and the first A second electrode is provided between the electrodes, and the second electrode is disposed over the entire top surface of the waveguide.
  • a length in a direction parallel to a longitudinal direction of the waveguide of a region where the insulating layer above the nitride semiconductor stacked portion is not disposed is provided. It is characterized by being 2 ⁇ m or more and 20 ⁇ m or less.
  • a coat film is formed on at least one of the substrate and the nitride semiconductor stacked portion on an end surface perpendicular to the longitudinal direction of the waveguide.
  • the insulating film is provided so as to protrude above the semiconductor laminated portion, and the protruding portion of the coating film does not contact the insulating layer.
  • the method for manufacturing a nitride semiconductor laser device of the present invention includes a first step in which a plurality of nitride semiconductor layers are stacked on a substrate to form a nitride semiconductor stacked portion, and the first step.
  • a second step of forming a striped first resist mask on the upper surface of the nitride semiconductor multilayer portion, and an upper portion of the nitride semiconductor multilayer portion on the first resist mask formed in the second step A third step of forming a ridge-striped waveguide in the nitride semiconductor stack by etching an uncovered portion, and the nitridation etched in the third step including the first resist mask
  • a first electrode is formed on top of the insulating layer and the nitride semiconductor stacked portion provided with the opening in the fifth step.
  • the second step after the second electrode is formed on the upper surface of the nitride semiconductor multilayer portion formed in the first step, the second electrode A striped first resist mask is formed on the upper surface of the electrode, and the third step is performed. Then, after removing the portion covered with the first resist mask of the second electrode formed in the second step, the surface of the nitride semiconductor multilayer portion is removed. A ridge stripe-shaped waveguide is formed in the nitride semiconductor multilayer portion by etching the portion in contact with the second electrode, and in the sixth step, the insulating layer and the second electrode are formed. A first resist is formed on top of the insulating layer, and in the seventh step, a second resist mask is formed on the insulating layer, the first electrode, and the second electrode except in the vicinity of the cleavage position. It is characterized by doing.
  • the method for manufacturing a semiconductor laser device of the present invention is obtained by removing the second resist mask in the ninth step and then cleaving in the cleavage position, and cleaving in the tenth step. And an eleventh step of forming a coating film on at least one of the cleavage planes so as not to contact the insulating layer.
  • FIG. 1 is a partial perspective view of a nitride semiconductor laser device according to a first embodiment.
  • FIG. 2 is a partial front view around the nitride semiconductor multilayer portion according to the first embodiment.
  • FIG. 3 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 4 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 5 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 6 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 7 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 8 is a partial cross-sectional view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 9 is a partial perspective view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • 10 Partial perspective view showing the method for manufacturing the nitride semiconductor laser device according to the first embodiment.
  • FIG. 11 is a partial perspective view of the nitride semiconductor laser device according to the second embodiment.
  • FIG. 23 is a schematic sectional view of a conventional nitride semiconductor laser device.
  • FIG. 1 is a partial perspective view of the nitride semiconductor laser device according to the first embodiment
  • FIG. 2 is a partial front view around the nitride semiconductor multilayer portion according to the first embodiment
  • FIGS. FIG. 9 and FIG. 10 are partial perspective views showing a method of manufacturing a nitride semiconductor laser device according to the embodiment.
  • a nitride semiconductor multilayer portion 11 is formed on an n-type GaN substrate (not shown) as shown in FIG.
  • the nitride semiconductor multilayer portion 1 1 includes, in order from the n-type GaN substrate 10 side, a Si-doped GaN buffer layer l la, an n-type GaN layer l lb, and an n-type AlGaN cladding layer 11 c by low-temperature growth.
  • N-type GaN optical waveguide layer l ld N-type GaN optical waveguide layer l ld, I nGaN multiple quantum well structure active layer l le, p-type AlGaN cap layer 1 If, p-type GaN optical wave layer 1 lg, p-type AlGaN cladding layer 1 lh and p-type GaN Contact layer 1 li is laminated.
  • the nitride semiconductor multilayer portion 11 includes a ridge stripe-shaped waveguide having a width of 2 ⁇ m formed by removing a part of the p-type AlGaN cladding layer l lh and a part of the p-type GaN contact layer l li 12 is formed.
  • an insulating film 21 having a thickness of 3500 A and having an SiO force is provided on the upper portion of the nitride semiconductor multilayer portion 11 and has an opening 21 a in a portion corresponding to the upper surface of the waveguide 12.
  • a p-side electrode 31 in which Pd with a thickness of 500 A and Au with a thickness of 6000 A are sequentially stacked is provided on the upper portion of the insulating film 21 and the upper surface of the waveguide 12, and is conducted through the opening 2 la of the insulating film 21. It is in ohmic contact with the upper surface of the waveguide 12.
  • the insulating film 21 is disposed at a position retracted 10 m from the exit side cleavage surface 13 and the reflection side cleavage surface 14 formed by cleavage, respectively, and from the exit side cleavage surface 13 and the reflection side cleavage surface 14. In the range of 10 m, the upper surface of the nitride semiconductor multilayer portion 11 is exposed.
  • nitride semiconductor laser device 1 As shown in FIG. 3, on an n-type GaN substrate (not shown), metal organic chemical vapor deposition (MOCVD) method, molecular beam epitaxy (MBE) The nitride semiconductor multilayer portion 11 is formed by a crystal growth method such as the) method.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • a striped first resist mask 41 having a width of 2 m is formed on the surface of the nitride semiconductor multilayer portion 11.
  • the nitride semiconductor multilayer portion 11 is etched up to the middle of the p-type AlGaN cladding layer l lh by reactive ion etching using the first resist mask 41 as a mask to obtain a waveguide. 12 is formed (see Fig. 2).
  • the process gas in this case is, for example, a chlorine-based gas such as CI, SiCl, BC1
  • an insulating film 21 having a SiO force of 3500 A is formed on the entire top surface of the nitride semiconductor multilayer portion 11 including the first resist mask 41 by an electron beam evaporation method.
  • the insulating film 21 and the first resist mask 41 on the first resist mask 41 are removed by a lift-off method, and an opening 21 a is provided in the insulating film 21.
  • FIG. 8 and FIG. 9 which is a perspective view thereof, a p-side electrode 31 in which Pd having a thickness of 500 A and Au having a thickness of 6000 A are sequentially stacked on the upper surfaces of the insulating film 21 and the waveguide 12. Form. At this time, the p-side electrode 31 is formed so as to avoid the portion forming the resonator end face, that is, the cleavage position 15.
  • a second resist mask 42 is formed on the insulating film 21 so as to completely cover the p-side electrode 31. At this time, the second resist mask 42 is formed at a position retracted 10 m from each cleavage position 15 on both the emission surface side and the reflection surface side.
  • the portion of the insulating film 21 that is exposed without being covered by the second resist mask 42 is etched by the reactive ion etching method until the nitride semiconductor multilayer portion 11 is reached.
  • the reactive ion etching method for example, CHF or CF is used as the process gas in this case.
  • the second resist mask 42 is removed with an agent, and cleavage is performed so as to form the emission-side cleavage surface 13 and the reflection-side cleavage surface 14, thereby obtaining the nitride semiconductor laser device 1 having the structure shown in FIG.
  • the nitride semiconductor laser device 1 before cleaving is not provided with the insulating film 21 above the cleavage position.
  • the cleavage plane 14 is formed, debris is generated from the insulating film 21 that also has SiO force.
  • the nitride semiconductor laser device 1 in which foreign matter derived from the insulating film 21 does not adhere to the emission-side cleavage surface 13 and the reflection-side cleavage surface 14 can greatly improve the yield related to the light emission characteristics. .
  • the nitride semiconductor laser device 1 shown in FIG. 1 is coated with the outgoing side cleaved surface 13 and the reflective side cleaved surface 14 to obtain a state shown in FIG.
  • the peeling of the end coat film originating from the foreign material adhering to the cleaved surface is dramatically reduced, and the reliability is improved. I was able to.
  • the force described in the case where the insulating film 21 is retracted by 10 m from the emission side cleavage surface 13 and the reflection side cleavage surface 14, respectively is 2 ⁇ m or more and 20 ⁇ m or less.
  • this width is narrower than m, when the cleavage plane is bent due to the influence of voids or the like in the nitride semiconductor multilayer portion 11 when the cleaved surface 13 and the reflective-side cleaved surface 14 are cleaved.
  • the cleavage plane may reach the insulating film 21, and the insulating film 21 may break and generate fragments.
  • this width is wider than 20 m, the linearity of the current 'light output characteristic of the nitride semiconductor laser device 1 is likely to be lost.
  • the p-side electrode 31 is not arranged in the part where the insulating film 21 is retracted, so that no current is injected into the waveguide 12 in this part, but there is a part where this current is not injected. This is because the effect on the current * light output characteristics is so large that it cannot be ignored.
  • FIG. 11 is a partial perspective view of the nitride semiconductor laser device according to the second embodiment
  • FIGS. 12 to 18 are partial sectional views showing a method for manufacturing the nitride semiconductor laser according to the second embodiment
  • a contact electrode is provided on the waveguide
  • the second embodiment is the same as the first embodiment except that a pad electrode is provided instead of the p-side electrode, and substantially the same parts are denoted by the same reference numerals.
  • a nitride semiconductor multilayer portion 11 is formed on an n-type GaN substrate (not shown) as shown in FIG.
  • the nitride semiconductor multilayer portion 11 has the same configuration as that of the first embodiment shown in FIG.
  • a waveguide 12 is formed in the nitride semiconductor multilayer portion 11 as in the first embodiment, and the upper portion of the nitride semiconductor multilayer portion 11 corresponds to the upper surface of the waveguide 12.
  • An insulating film 21 having an opening 21a is provided at a site to be formed.
  • a contact electrode 33 made of Pd having a thickness of 500 A is provided on the upper surface of the waveguide 12 and is in ohmic contact with the upper surface of the waveguide 12.
  • a pad electrode 34 having a thickness of 6000 A and having an Au force is provided on the insulating film 21 and the contact electrode 33.
  • the insulating film 21 is disposed at a position retracted by 25 ⁇ m from the emission side cleavage surface 13 and the reflection side cleavage surface 14 formed by cleavage, respectively.
  • the emission side cleavage surface 13 and the reflection side cleavage surface 14 To 25 m, the upper surface of the nitride semiconductor multilayer portion 11 is exposed.
  • the nitride semiconductor multilayer portion 11 of the nitride semiconductor multilayer portion 11 is formed as shown in FIG.
  • a contact electrode 33 is formed on the surface, and a stripe-shaped first resist mask 41 having a width is formed on the contact electrode 33 as shown in FIG.
  • the contact electrode 33 is etched by reactive ion etching until the surface of the nitride semiconductor multilayer portion 11 is exposed.
  • Ar, CHF, or the like is used as an etching gas.
  • the nitride semiconductor multilayer portion 11 is etched from the upper surface to the middle of the p-type AlGaN cladding layer l lh by reactive ion etching to form a waveguide 12.
  • a process gas for example, a chlorine-based gas such as CI, SiCl, or BC1 is used.
  • an insulating film having a thickness of 3500 and 310 forces is formed on the entire top surface of the nitride semiconductor multilayer portion 11 including the side surfaces of the first resist mask 41 and the contact electrode 33.
  • the insulating film 21 and the first resist mask 41 on the first resist mask 41 are removed by a lift-off method to provide an opening 21 a in the insulating film 21.
  • the state shown in Fig. 17 is obtained.
  • FIG. 18 and FIG. 19 which is a perspective view thereof, a pad electrode 34 made of Au having a thickness of 6000 A is formed on the insulating film 21 and the contact electrode 33. At this time, the pad electrode 34 is formed so as to avoid the portion forming the resonator end face, that is, the cleavage position 15.
  • a second resist mask 42 is formed on the insulating film 21 so as to completely cover the contact electrode 33 and the pad electrode 34. At this time, the second resist mask 42 is formed at a position retracted by 25 m from the cleavage position 15 on both the emission surface side and the reflection surface side.
  • the insulating film 21 that is exposed without being covered with the second resist mask 42 is etched by the reactive ion etching method until it reaches the nitride semiconductor multilayer portion 11. To do. Finally, the second resist mask 42 is removed with an organic solvent, and the cleaved surface 13 and the reflective side cleaved surface 14 are cleaved to form the nitride semiconductor laser device 1 having the structure shown in FIG. Get.
  • the insulating film 21 is not disposed above the cleavage position as in the first embodiment.
  • the emission-side cleavage surface 13 and the reflection-side cleavage surface 14 are formed by cleavage, no debris is generated from the insulating film 21 that also has the Si 2 O force. Therefore, the exit side cleaved surface 13 and
  • the nitride semiconductor laser device 1 in which foreign matter derived from the insulating film 21 does not adhere to the reflection-side cleaved surface 14 can greatly improve the yield related to the light emission characteristics.
  • the contact electrode 33 is disposed up to the resonator end face, that is, directly above the emission-side cleavage surface 13 and the reflection-side cleavage surface 14, and the waveguide 12 has a current as a whole. Therefore, the linearity of the current optical output characteristics is not lost due to the injected current as in the case where there is a portion where no electrode is provided on the waveguide 12.
  • FIG. 22 is a partial perspective view of a nitride semiconductor laser device according to the third embodiment of the present invention.
  • Third embodiment Is the same as in the first embodiment except that end face coating with a coating film is performed on the outgoing side cleaved surface 13 and the reflective side cleaved surface 14, and substantially the same parts are denoted by the same reference numerals. It is.
  • the nitride semiconductor laser device 1 according to the third embodiment is formed on the nitride semiconductor multilayer portion 11 having the configuration shown in FIG. 2 as in the first embodiment.
  • a waveguide 12 is formed, and has an opening 21a at a portion corresponding to the upper surface of the waveguide 12, and has no SiO force.
  • a p-side electrode 31 in which Pd having a thickness of 500 A and Au having a thickness of 6000 A are sequentially laminated is provided on the insulating film 21 and the top surface of the waveguide 12. Further, the insulating film 21 is disposed at a position retracted by 18 ⁇ m from each of the emission side cleavage surface 13 and the reflection side cleavage surface 14 formed by cleavage.
  • the surface of the outgoing side cleaved surface 13 is made of AlO with a thickness of 70 A.
  • the front coat film 51 has a total of nine layers of SiO and TiO alternately stacked on the surface of the reflective cleaved surface 14.
  • a rear coat film 52 having a multilayer structure with two layers is provided, and partially overlies the upper surface of the nitride semiconductor multilayer portion 11 with a gap 61 and a gap 62 from the insulating film 21, respectively.
  • the front coat film 51 is activated by the oscillation light and the reactivity is increased.
  • the temperature of the resonator end face that is, the emission-side cleavage face 13 and the reflection-side cleavage face 14 is continuously driven. For example, when the temperature exceeds 100 ° C, Al O force
  • the front coat film 51 reacts with the insulating film 21 with SiO force, and the eutectic of Al and Si coats the front coat.
  • the film 51 Due to this eutectic, the reflectance of the front coat film 51 is greatly deviated from the design value, and accordingly, the operating characteristics of the semiconductor laser device 10 may be fluctuated, resulting in lack of long-term reliability.
  • the eutectic of A1 and Si is not formed in the front coat film 51 by arranging the front coat film 51, the insulating film 21, and the force gap 61 as in the third embodiment. Therefore, the long-term reliability could be greatly improved.
  • nitride semiconductor refers to a semiconductor in which Ga in gallium nitride (GaN) is partially replaced by another group III element, such as Ga Al ln N (0 ⁇ s ⁇ l, 0 ⁇ t ⁇ l, 0 ⁇ s + t ⁇ l), including semiconductors in which some of the constituent elements are replaced by impurity elements and semiconductors to which other impurities are added.
  • the p-side electrode 31 of the first and third embodiments also has a two-layer structural force of Pd with a thickness of 500A and Au with a thickness of 6000A in order from the surface side of the nitride semiconductor multilayer portion 11.
  • Ni or Ti is used instead of Pd or Au, or if another metal such as Au or Mo is laminated on Pd, Au, Ni or Ti, etc., it is even thicker.
  • the same nitride semiconductor laser device can be manufactured by the manufacturing method according to the present invention even if it is not as in these embodiments.
  • the contact electrode 33 is made of Pd and the pad electrode 34 is made of Au.
  • the contact electrode 33 is made of Ni, Ti, the pad electrode 34 is made of Mo, etc. Even if the electrode has a structure in which a plurality of metals such as Pd, Au, Ni, Ti and Mo are laminated, and even if the thickness is not as in the second embodiment, the manufacturing method according to the present invention A similar nitride semiconductor laser device can be produced.
  • the insulating film 21 of the first to third embodiments has a force that has a SiO force TiO, Si
  • inorganic dielectrics such as 0, Ta O, SiN, or nitride semiconductors such as AlGaN.
  • the formation method may be based on the sputtering method, the plasma CVD method, or the like, instead of the electron beam evaporation method exemplified in the description of the embodiment.
  • the insulating film 21 has removed all of the partial force directly above the resonator end face, that is, the emission-side cleaved surface 13 and the reflection-side cleaved surface 14, fragments of the insulating film 21 crushed at the time of cleavage become the light emission point. As long as it does not scatter to the end face of the waveguide 12 and its vicinity, it is not always necessary to remove all the portions directly above the end face of the resonator. For example, the removal range may be only the waveguide 12 and its vicinity. .
  • the third embodiment of the present invention corresponds to a state in which the nitride semiconductor laser device according to the first embodiment is end-coated, but the second embodiment Pertaining to The same effect can be obtained even when the same end face coating is applied to the nitride semiconductor laser device.
  • a reactive ion etching method as a dry etching method, an inductively coupled plasma etching method, an ECR plasma etching method, etc.
  • similar etching is possible by using the same process gas.
  • the portion exposed without being covered with the second resist mask 42 of the insulating film 21 is dug by the reactive ion etching method.
  • the nitride semiconductor multilayer portion 11 itself is partially dug, the same effect can be obtained.
  • the insulating protective film is not disposed at least in the vicinity of the longitudinal end portion of the waveguide on the upper portion of the nitride semiconductor multilayer portion, and the end surface is obtained by cleaving the nitride semiconductor multilayer portion. Since the insulating protective film is not crushed when manufacturing the semiconductor device, it is possible to realize a nitride semiconductor laser device with a high manufacturing yield that does not cause problems due to fragments of the insulating protective film. .
  • the electrode is provided on the waveguide. As a result, the linearity of the current / light output characteristics is not disrupted.
  • the length in the direction parallel to the longitudinal direction of the waveguide in the region where the insulating layer on the upper part of the nitride semiconductor multilayer portion is not disposed is 2 ⁇ m or more and 20 m or less. Therefore, even if the cleavage plane is bent at the time of cleavage, the insulating film does not break and generates fragments.In addition, even if the second electrode is provided only under the insulating layer, the current It is hard to break down.
  • the insulating protective film does not contact the coat film formed on the cleavage plane, for example, SiO is used as the insulating protective film, and the coat film forms a eutectic with Si.

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un procédé de fabrication d’un laser à semi-conducteurs de nitrure, dans lequel un film isolant (21) est formé sur une partie à semi-conducteurs de nitrure multicouche (11) sur un substrat, un masque de résist est formé sur le film isolant (21) de manière à ce que ce même film isolant (21) soit exposé à proximité de positions pour constituer un plan de clivage du côté de sortie (13) et un plan de clivage du côté de réflexion (14), un film isolant (21) est retiré à proximité des positions pour constituer le plan de clivage du côté de sortie (13) et le plan de clivage du côté de réflexion (14), et suite au retrait du masque de résist, ils sont clivés. Étant donné que le film isolant (21) n’est pas écrasé même si le substrat et la partie à semi-conducteurs de nitrure multicouche (11) sont clivés dans les positions pour constituer le plan de clivage du côté de sortie (13) et le plan de clivage du côté de réflexion (14), des fragments dérivés du film isolant (21) n'adhèrent pas au plan de clivage du côté de sortie (13) et au plan de clivage du côté de réflexion (14).
PCT/JP2006/307771 2005-06-16 2006-04-12 Laser à semi-conducteurs de nitrure et son procédé de fabrication WO2006134717A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078482A1 (fr) * 2007-12-19 2009-06-25 Rohm Co., Ltd. Dispositif électroluminescent semi-conducteur
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2011507304A (ja) * 2007-12-28 2011-03-03 アギア システムズ インコーポレーテッド デルタドープされた活性領域を有する導波路装置
JP2013041978A (ja) * 2011-08-15 2013-02-28 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、及び窒化物半導体発光素子を作製する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122816A (ja) * 1993-10-15 1995-05-12 Internatl Business Mach Corp <Ibm> 半導体量子井戸型レーザ及びその製造方法
JP2000012956A (ja) * 1998-06-19 2000-01-14 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2004111997A (ja) * 2001-05-31 2004-04-08 Nichia Chem Ind Ltd 半導体レーザ素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332674A (ja) * 2002-05-10 2003-11-21 Fuji Photo Film Co Ltd 半導体レーザ素子
JP4390433B2 (ja) * 2002-06-19 2009-12-24 シャープ株式会社 窒化物半導体レーザ及びその製造方法
JP4186581B2 (ja) * 2002-10-15 2008-11-26 三菱電機株式会社 半導体レーザ素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122816A (ja) * 1993-10-15 1995-05-12 Internatl Business Mach Corp <Ibm> 半導体量子井戸型レーザ及びその製造方法
JP2000012956A (ja) * 1998-06-19 2000-01-14 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2004111997A (ja) * 2001-05-31 2004-04-08 Nichia Chem Ind Ltd 半導体レーザ素子

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078482A1 (fr) * 2007-12-19 2009-06-25 Rohm Co., Ltd. Dispositif électroluminescent semi-conducteur
JPWO2009078482A1 (ja) * 2007-12-19 2011-05-06 ローム株式会社 半導体発光素子
US8411718B2 (en) 2007-12-19 2013-04-02 Rohm Co., Ltd. Semiconductor light-emitting device
JP2011507304A (ja) * 2007-12-28 2011-03-03 アギア システムズ インコーポレーテッド デルタドープされた活性領域を有する導波路装置
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2013041978A (ja) * 2011-08-15 2013-02-28 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、及び窒化物半導体発光素子を作製する方法

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