WO2006123404A1

WO2006123404A1 - Electronic part test device and method for controlling temperature in electronic part test device

Info

Publication number: WO2006123404A1
Application number: PCT/JP2005/008994
Authority: WO
Inventors: Akihiko Ito
Original assignee: Advantest Corporation
Priority date: 2005-05-17
Filing date: 2005-05-17
Publication date: 2006-11-23
Also published as: JPWO2006123404A1; JP4514787B2

Abstract

An electronic part test device includes a chamber for heating and/or cooling an electronic part to a predetermined temperature and a socket arranged in the chamber, capable of making an electric connection with a connection terminal of the electronic part and making mechanical and electric connection with a test head arranged outside the chamber. An external temperature applying device is provided for heating and/or cooling the socket from outside so as to have substantially identical temperature as the temperature in the chamber. This prevents leak of heat from the socket and substantially eliminates a temperature gradient between a pusher arranged in the chamber and the electronic part under test. Thus, a temperature sensor arranged in the pusher can accurate measure the temperature of the electronic part under test.

Description

Specification

Electronic component testing apparatus and temperature control method in electronic component testing apparatus

TECHNICAL FIELD [0001] The present invention relates to an apparatus for testing an electronic component such as an IC device, and relates to an electronic component test apparatus capable of performing temperature control of the electronic component, and a temperature control method in a powerful electronic component test apparatus. Is.

Background art

[0002] In the manufacturing process of electronic components such as IC devices, a test apparatus for testing the finally manufactured electronic components is required. As one type of such a test apparatus, an apparatus for testing a plurality of IC devices at a time at a temperature condition (thermal stress condition) higher or lower than normal temperature is known.

[0003] In the above test apparatus, a test chamber is formed in the upper part of the test head, and a plurality of IC devices that are similarly set to a predetermined set temperature are held while the inside of the test chamber is controlled to a predetermined set temperature by air. The test tray is transported to the socket on the test head, where the IC device is pressed against the socket by a pusher, and the test is performed. Under such heat stress, IC devices are tested and at least divided into good and defective products.

FIG. 10 is a conceptual diagram showing an example of a temperature control method for an IC device in a conventional test apparatus. As shown in FIG. 10, inside the test chamber casing 80, the temperature adjusting blower 90, the temperature sensor 82, the pusher 30, the IC device 2, and the socket 40 are positioned. A test head 5 and a temperature controller 88 are located outside the casing 80. The inside of the test chamber casing 80 can maintain a desired temperature based on the temperature sensor 82.

[0005] In this test apparatus, the target set temperature to be applied to the IC device under test (DUT).

(Target set temperature) is T8, the actual internal temperature of the DUT (DUT temperature) is T9, the set temperature in the chamber set to the target temperature with the test chamber is T2, and the temperature of pusher 30 (pusher temperature) is T3 Let T4 be the temperature of the socket 40 (socket temperature), and T6 be the temperature of the test head 5 in the ambient temperature. Here, as a specific example of the high temperature test, Assuming a set temperature T8 = 120 ° C, a test head temperature T6 = 70 ° C, and operating at a set temperature T2 = 120 ° C in the chamber. In this case, there is a temperature difference of 120 ° C – 70 ° C = 50 ° C between the chamber set temperature T2 and the test head temperature T6. With this temperature difference, heat flow as shown in Fig. 10 (Heat propagation) F1 (Atmosphere-Pusher 30) → F2 (Pusher 30-IC device 2) → F3 (IC device 2-Socket 40) → F4 (socket 40 to test head 5) is generated.

On the other hand, as shown in FIG. 10, there is a thermal resistance HR 1 between the atmosphere in the chamber and the pusher 30, a thermal resistance HR 2 between the pusher 30 and the IC device 2, and an IC device 2 and a probe pin. Between the probe pin and the socket 40, and between the probe pin and the socket 40, there is a thermal resistance HR4 between the socket 40 and the test head 5. In particular, for the thermal resistances HR2 and HR3, the state in which the pusher 30 presses the IC device 2 may be different each time, so that the thermal resistance is not always constant. Therefore, there is a problem that the DUT temperature T9 is not always in a constant state and becomes an unknown temperature state. In addition, the DUT temperature T9 is affected by the heat generation factor associated with the power consumption of the DUT itself.

[0007] By the way, the target set temperature T8 varies depending on the test item and the type of IC device 2 (for example, + 120 ° C, + 85 ° C, + 40 ° C, 0 ° C, -25 ° C, etc.). For this reason, it is necessary to obtain the setting conditions for the chamber set temperature T2 in advance so that the DUT has the corresponding target set temperature T8. For this purpose, a dummy device (dedicated device) with a temperature sensor embedded under the same conditions as the device type to be tested is used. That is, place the dummy device under the same conditions as the actual test and measure the DUT temperature T9 of the dummy device. Then, the set temperature T2 in the chamber is sequentially changed, and the temperature is measured in a stable temperature state. Eventually, the set temperature T2 in the chamber when the measured DUT temperature T9 reaches the target set temperature T8 is stored and saved as the set conditions for the device. Based on the stored set temperature T2 in the chamber, the DUT is controlled to the target set temperature T8 and the test is performed.

Disclosure of the invention

Problems to be solved by the invention

[0008] However, in the above method, the dedicated device for temperature measurement for each type of IC device 2 is used. It is necessary to make a device, which takes time. In addition, since the contact thermal resistance of the contact area between the pusher 30 and the DUT and the temperature condition of the test head temperature T6 may change, the DUT may not achieve the correct target set temperature T8 in actual tests. . For this reason, the reliability of DUT temperature management is difficult.

[0009] The present invention has been made in view of such a situation, and an electronic component capable of accurately performing temperature management or temperature control of an electronic component without requiring a dedicated device for temperature measurement. An object is to provide a component testing apparatus and a temperature control method.

Means for solving the problem

[0010] To achieve the above object, first, the present invention is mechanically and electrically connected to a chamber for heating and Z or cooling an electronic component to a predetermined temperature, and a test head outside the chamber. The electronic component testing apparatus includes a socket disposed in the chamber and electrically connectable to a connection terminal of the electronic component, wherein the socket has a temperature substantially equal to the temperature in the chamber. Thus, an electronic component test apparatus is provided, comprising an external temperature application device for heating and / or cooling the socket from the outside of the chamber (Invention 1).

[0011] According to the above invention (Invention 1), the escape of heat from the socket can be prevented, so that the temperature gradient between the pusher located in the chamber and the electronic device under test is substantially eliminated. be able to. Therefore, when the pusher is provided with a temperature sensor, the temperature of the electronic device under test that is not affected by the unknown thermal resistance between the pusher and the electronic device under test can be accurately measured by the pusher temperature sensor. . As a result, the temperature control of the electronic component can be performed more accurately based on the measured value.

[0012] In the above invention (Invention 1), when the set temperature in the chamber when the electronic component is set to the target set temperature during the test is set to the set temperature in the chamber, the electronic component has a plurality of different set temperatures. It is preferable that a corresponding set temperature in the chamber is obtained in advance, and the chamber is heated and Z or cooled based on the set temperature in each chamber obtained above (Invention 2). According to this invention (Invention 2), the electronic device under test can be controlled to a plurality of set temperatures.

[0013] In the above invention (Invention 1), the voltage rises when electric power for testing is supplied to the electronic component. And a temperature rise measuring means for measuring the temperature rise of the junction temperature (internal temperature) of the electronic component, and the chamber is based on the temperature rise obtained by the temperature rise measuring means. It is preferable to control the temperature inside (Invention 3). According to this invention (Invention 3), it is possible to control the electronic device under test to a desired set temperature even when the electronic device self-heats during testing.

[0014] In the above invention (Invention 1), a first temperature sensor for detecting a package temperature or a junction temperature (internal temperature) of the electronic component and a second temperature sensor for detecting the temperature of the socket are provided. It is further preferable that the external temperature application device is controlled based on the temperatures detected by the first temperature sensor and the second temperature sensor (Invention 4). According to the strong invention (Invention 4), the temperature of the socket can be easily controlled by the external temperature application device by detecting the temperature of the socket by the second temperature sensor.

[0015] The above invention (Invention 1) further includes a first temperature sensor for detecting a package temperature or a junction temperature (internal temperature) of the electronic component, and the temperature detected by the first temperature sensor. The external temperature application device may be controlled based on the above (Invention 5).

[0016] In the above invention (Invention 1), the first temperature sensor may be provided in a pusher that presses the electronic component against the socket or in a portion that contacts the electronic component in the pusher. (Invention 6) As the first temperature sensor, a protection diode formed on an input terminal or an output terminal of the electronic component may be used (Invention 7).

[0017] In the above invention (Invention 1), a plurality of the sockets are provided, and the first temperature sensors are distributed in a number smaller than the number of the sockets, or only one is provided. In addition, only one external temperature applying device is provided, and the plurality of sockets may be collectively heated, Z, or cooled by the single external temperature applying device (Invention 8).

[0018] In the above invention (Invention 1), a plurality of the sockets are provided, and the first temperature sensors are provided in a distributed number smaller than the number of the sockets. The same number of temperature application devices as the first temperature sensors are provided at positions corresponding to the first temperature sensors, and the plurality of sockets are added by the number of external temperature application devices. Heat and Z or cool (Invention 9).

[0019] The above invention (Invention 1) further comprises a junction temperature detecting means for detecting a temperature rise amount of the junction temperature (internal temperature) of the electronic component accompanying power consumption of the electronic component itself. The temperature in the chamber may be controlled based on the temperature increase obtained by the junction temperature detecting means so that the temperature of the electronic component is required during the test (Invention 10).

[0020] Secondly, the present invention is mechanically and electrically connected to a chamber for heating and Z or cooling an electronic component to a predetermined temperature and a test head outside the chamber, and is disposed in the chamber. An electronic component testing apparatus comprising: a socket that can be electrically connected to a connection terminal of an electronic component; and a pusher that presses the electronic component against the socket, wherein the socket is heated from outside the chamber. And an external temperature application device that cools Z or cools, and a temperature sensor that detects a package temperature or a junction temperature of the electronic component, wherein the pusher is the electronic component, and the terminal of the electronic component is the terminal. A non-contact position state that does not contact the socket and a contact position state where the terminal of the electronic component contacts the socket can be controlled, and the temperature in the non-contact position state can be controlled. The external temperature application device is controlled such that the first temperature value of the sensor and the second temperature value of the temperature sensor in the contact position state are substantially the same. A test device is provided (Invention 11).

[0021] According to the above invention (Invention 11), heat escape from the socket can be prevented, so that a temperature gradient between the pusher located in the chamber and the electronic device under test is substantially eliminated. be able to. Therefore, when the pusher is provided with a temperature sensor, the temperature of the electronic device under test that is not affected by the unknown thermal resistance between the pusher and the electronic device under test can be accurately measured by the pusher temperature sensor. . As a result, the temperature control of the electronic component can be performed more accurately based on the measured value.

[0022] Thirdly, the present invention is mechanically and electrically connected to a chamber for heating and Z or cooling an electronic component to a predetermined temperature and a test head outside the chamber, and is disposed in the chamber. And a temperature control method in an electronic component testing apparatus comprising a socket that can be electrically connected to a connection terminal of the electronic component, wherein the socket is disposed in the chamber. Provided is a temperature control method in an electronic component test apparatus, wherein the socket is heated and Z or cooled from the outside of the chamber so that the temperature is substantially the same as the temperature (Invention 12).

[0023] In the above invention (Invention 12), when the set temperature in the chamber when the electronic component is set to the target set temperature during the test is set to the set temperature in the chamber, the electronic component is set to a plurality of different set temperatures. It is preferable that a corresponding set temperature in the chamber is obtained in advance, and the chamber is heated and Z or cooled based on the set temperature in each chamber obtained above (Invention 13).

[0024] In the above invention (Invention 12), a temperature rise amount of the junction temperature (internal temperature) of the electronic component when power is supplied to the electronic component is measured, and the measured temperature rise amount is calculated. Based on this, it is preferable to control the temperature in the chamber and the temperature of Z or the socket (Invention 14).

[0025] In the above invention (Invention 12), a package temperature or a junction temperature (internal temperature) of the electronic component and a temperature of the socket are detected, and the temperature of the socket is determined based on the detected temperatures. Control is preferred (Invention 15).

[0026] In the above invention (Invention 12), the package temperature or junction temperature (internal temperature) of the electronic component may be detected, and the temperature of the socket may be controlled based on the detected temperature (Invention). 16).

[0027] In the above invention (Invention 12), a temperature rise amount of a junction temperature (internal temperature) of the electronic component accompanying power consumption of the electronic component itself is measured, and the chamber is based on the measured temperature rise amount. It is preferable to control the temperature inside (Invention 17).

[0028] Fourthly, the present invention is mechanically and electrically connected to a chamber for heating and Z or cooling an electronic component to a predetermined temperature, and a test head outside the chamber, and is disposed in the chamber. And a socket capable of being electrically connected to a connection terminal of the electronic component, and a temperature control method in an electronic component testing apparatus, wherein the electronic device in a non-contact position state where the terminal of the electronic component does not contact the socket Measuring a first temperature value of the component; measuring a second temperature value of the electronic component in a contact position where the terminal of the electronic component contacts the socket; measuring the first temperature value and the second temperature value; The temperature value is almost the same Thus, a temperature control method in an electronic component test apparatus is provided, characterized in that the socket is heated and z or cooled from the outside of the chamber (Invention 18).

The invention's effect

[0029] According to the present invention, temperature management or temperature control of an electronic component in an electronic component test apparatus can be performed easily and accurately.

Brief Description of Drawings

FIG. 1 is an overall side view of an IC device test apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view of a handler in the same embodiment.

FIG. 3 is a cross-sectional view of the main part in the test chamber of the handler in the same embodiment.

FIG. 4 is an exploded perspective view showing a structure near a pusher and a socket in the same embodiment.

FIG. 5 is a partial cross-sectional view showing a structure near a pusher and a socket in the same embodiment.

FIG. 6 is a conceptual diagram showing a temperature control method of the IC device in the same embodiment.

FIG. 7 is a diagram showing an installation example of a temperature sensor in a pusher.

[Fig. 8] Graph showing temperature at each observation point (temperature characteristic graph).

FIG. 9 is a circuit diagram for detecting the temperature of an IC device using a protection diode inside the IC device.

FIG. 10 is a conceptual diagram showing a temperature control method of an IC device in a conventional IC device test apparatus.

Explanation of symbols

[0031] 1 ... Handler (Electronic component handling device)

2—IC devices (electronic components)

10 ·· 'IC device (electronic parts) test equipment

30 ... Pusher

40 "socket

311, 45, 82 ··· Temperature sensor

90 .... Blower for temperature control BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, an overall configuration of an IC device test apparatus including a handler according to an embodiment of the present invention will be described. As shown in FIG. 1, the IC device test apparatus 10 includes a handler 1, a test head 5, and a test main apparatus 6. Handler 1 sequentially transports IC devices to be tested (an example of electronic components) to a socket provided in test head 5, sorts the IC devices that have been tested according to the test results, and stores them in a specified tray Execute.

[0034] The socket provided on the test head 5 is electrically connected to the test main device 6 through the cable 7. The IC device detachably attached to the socket is connected to the test main device 6 through the cable 7. Connect and test the IC device with the electrical test signal from the main test device 6.

A control device that mainly controls the handler 1 is built in the lower part of the handler 1, but a space portion 8 is provided in part. The test head 5 is replaceably disposed in the space portion 8 so that the IC device can be mounted in the socket on the test head 5 through the through hole formed in the handler 1.

[0036] This handler 1 is a device for testing an IC device as an electronic component to be tested in a temperature state (high temperature) higher or lower than normal temperature, and a low temperature state (low temperature). As shown in FIG. 2, the chamber 100 includes a thermostatic chamber 101, a test chamber 102, and a heat removal bath 103. The upper part of the test head 5 is inserted into the inside of the test chamber 102 as shown in FIG. 3, and the IC device 2 is tested there.

[0037] As shown in FIG. 2, the handler 1 of this embodiment stores an IC device 200 that stores the IC devices that are also tested, and classifies and stores the tested IC devices. Part 200 Loader part 300 for sending IC devices to be tested to the chamber part 100 to which force is sent, the chamber part 100 including the test head, and the unloader part for taking out and classifying the tested ICs that have been tested in the chamber part 100 It consists of 400 and

[0038] A large number of IC devices before being set in the handler 1 are stored in the customer tray. In this state, the IC devices are supplied to the IC storage unit 200 of the center 1 shown in FIG. To IC tray 2 on the test tray (indicated by TST in Figure 3) Can be replaced. Inside Handler 1, the IC device moves on the test tray, is tested for proper operation under high or low temperature stress, and is classified according to the test results. The Below, the inside of Handler 1 will be explained individually.

First, the parts related to the IC storage unit 200 will be described.

As shown in FIG. 2, the IC storage unit 200 includes a pre-test IC stocker 201 for storing pre-test IC devices and a tested IC stocker 202 for storing IC devices classified according to the test results. Are provided.

[0040] The pre-test IC stocker 201 and the tested IC stocker 202 include a frame-like tray support frame 203 and an elevator 204 that can enter and exit from the lower portion of the tray support frame 203 to move upward and downward. It is equipped with. A plurality of customer trays are stacked and supported on the tray support frame 203, and only the stacked customer trays are moved up and down by the elevator 204.

[0041] In the pre-test IC stocker 201 shown in FIG. 2, customer trays containing IC devices to be tested are stacked and held. In addition, in the tested IC stocker 202, customer trays in which IC devices classified after the test are stored are stacked and held.

Secondly, parts related to the loader unit 300 will be described.

As shown in FIG. 2, the customer tray stored in the tray support frame 203 of the IC stocker 201 before the test is loaded into the loader section by the tray transfer arm 205 provided between the IC storage section 200 and the device board 105. The lower force of the device substrate 105 is also carried to the 300 windows 306. Then, the IC device under test loaded on the customer tray is transferred to the precursor 305 by the XY transport device 304 in the header section 300, where the IC devices under test are mutually connected. After correcting the position of the IC, the IC device under test transferred to the precursor 305 is reloaded onto the test tray stopped at the loader unit 300 by using the XY transport device 304 again.

[0043] As shown in FIG. 2, the X-Y transfer device 30 4 that reloads the IC device under test onto the test tray, such as a customer tray car, has two rails 301 installed on the upper portion of the device substrate 105, and this A movable arm 302 that can reciprocate between the test tray and the customer tray by two rails 301 (this direction is defined as the Y direction), and is supported by the movable arm 302, and along the movable arm 302 in the X direction. And a movable head 303 that can be moved to the position.

[0044] A suction head is mounted downward on the movable head 303 of the transporting device 304. When the suction head moves while sucking air, the customer tray can also be tested. Adsorb the device and transfer the IC device under test to the test tray.

[0045] Third, parts related to the chamber 100 will be described.

The test tray described above is loaded into the chamber 100 after the IC devices to be tested are loaded by the loader unit 300, and each IC device to be tested is tested in a state of being mounted on the test tray.

[0046] As shown in FIG. 2, the chamber 100 is provided with a thermostat 101 for applying a desired high or low temperature thermal stress to the IC device under test loaded on the test tray, and the thermostat 101 is applied with the thermal stress. The test chamber 102 in which the IC device under test is mounted in the socket on the test head, and the heat removal tank that removes the applied thermal stress from the IC device under test tested in the test chamber 102 It is composed of 103.

[0047] In the heat removal chamber 103, when a high temperature is applied in the thermostatic chamber 101, the IC device under test is cooled to the room temperature by blowing air, and when a low temperature is applied in the thermostatic chamber 101, the IC device under test is tested. Heat the vice with warm air or a heater, etc. to return to a temperature where condensation does not occur! Then, the IC device under test with the heat removed is carried out to the unloader section 400.

The constant temperature bath 101 is provided with a vertical transfer device, and a plurality of test trays are on standby while being supported by the vertical transfer device until the test chamber 102 is empty. Mainly during this standby, high or low temperature thermal stress is applied to the IC device under test.

As shown in FIG. 3, in the test chamber 102, the test head 5 is arranged at the lower center of the test chamber 102, and the test tray is carried on the test head 5. In this case, all the IC devices 2 held by the test tray are sequentially brought into electrical contact with the test head 5 to test all the IC devices 2 in the test tray. On the other hand, after the test is completed, the heat is removed in the heat removal tank 103, the temperature of the IC device 2 is returned to room temperature, and then the unloader section shown in FIG. 400 liters are produced.

[0050] Further, as shown in FIG. 2, an inlet opening for feeding the test tray from the device substrate 105 to the upper part of the constant temperature bath 101 and the heat removal bath 103, and for sending the test tray to the device substrate 105 The outlet openings are respectively formed. The apparatus substrate 105 is equipped with a test tray transfer device 108 for taking in and out the test tray from these openings. These conveying devices 108 are constituted by rotating rollers, for example. The test tray discharged from the heat removal tank 103 is transferred to the unloader unit 400 by the test tray transfer device 108 provided on the apparatus substrate 105.

[0051] A plurality of inserts 16 are attached to the test tray. In the insert 16, as shown in FIG. 4, a rectangular concave IC storage portion 19 for storing the IC device 2 to be tested is formed in the central portion. In addition, a guide hole 20 into which the guide pin 32 of the pusher 30 is inserted is formed at the center of both ends of the insert 16, and the test tray mounting piece 14 is mounted at the corners of both ends of the insert 16. Hole 21 is formed!

As shown in FIG. 4, a socket board 50 is disposed on the test head 5, and a socket 40 having probe pins 44 as connection terminals is fixed thereon. The probe pins 44 are provided at a number and pitch corresponding to the connection terminals of the IC device 2 and are panel-biased upward by a spring not shown.

As shown in FIG. 6, the temperature is applied to the socket 40 in the present embodiment by a temperature applying device 91. Examples of the temperature application device 91 to be applied may be a heater or a cooling element provided directly or indirectly on the socket 40 (for example, a ground member positioned between the socket 40 and the test head 5). However, the body of the socket 40 or the base of the socket 40 (the base on which the socket board 50 is mounted) is hollow, and there is no particular limitation even if it is a device through which temperature-controlled air is passed. . The temperature applying device 91 is electrically connected to the temperature controller 93.

In addition, the socket 40 is provided with a temperature sensor 45 as shown in FIG. The temperature sensor 45 is preferably provided at a position where the temperature of the socket 40 can be measured, and particularly preferably at a position where the temperature near the probe pin 44 can be measured. The temperature sensor 45 is electrically connected to the temperature controller 93. As shown in FIG. 4, a socket guide 41 is fixed on the socket board 50 so that the probe pins 44 provided on the socket 40 are exposed. On both sides of the socket guide 41, two guide pins 32 formed on the pusher 30 are inserted, and guide bushes 411 for positioning between these two guide bins 32 are provided! /, The

As shown in FIGS. 3 and 4, pushers 30 are provided on the upper side of the test head 5 corresponding to the number of sockets 40. As shown in FIG. 4, the pusher 30 has a pusher base 33 fixed to a mouth 621 of an adapter 62 described later. In the lower center of the pusher base 33, there is provided a pressing element 31 for pressing the IC device 2 to be tested. The pusher base 33 is directed downward, and at both lower ends of the pusher base 33, guide holes of the insert 16 are provided. 20 and a guide pin 32 to be inserted into the guide bushing 411 of the socket guide 41 are provided. Further, when the pusher 30 is moved downward by the Z-axis drive device 70 between the presser 31 and the guide pin 32, the lower limit is defined by contacting the stopper surface 412 of the socket guide 41. Stopper pin 34 is provided!

As shown in FIG. 5 and FIG. 6, a temperature sensor 311 is provided on the pressing element 31 of the pusher 30. This temperature sensor 311 is electrically connected to the temperature controller 93. The temperature sensor 311 is preferably provided at a position where the package temperature of the IC device 2 under test can be easily measured. For example, as shown in FIG. 7 (a), it is preferably provided in the vicinity of the IC device under test 2 to be pressed inside the pressing element 31 of the pusher 30. In order to suppress the thermal effect from the pusher 30, it is preferable that a gap (gap) 315 or a heat insulating member is interposed between the temperature sensor 311 and the presser 31.

As another example, as shown in FIG. 7 (b), a recess 313 is formed in the lower part of the pressing element 31, and an elastic member 312 is interposed between the temperature sensor 311 and the pressing element 31, The temperature sensor 311 is configured to directly contact the package of the IC device 2 under test when pressed. The temperature sensor 311 having such a configuration can measure the temperature of the pressing element 31 when not pressed, and can measure the temperature of the IC device 2 under test contacting the IC device 2 under test when pressed. .

[0059] On the upper side of the pusher base 33, a heat sink 35 is provided. This heat sink 35 is also configured with multiple radiating fin forces, such as aluminum, copper, their alloys, or The material strength is excellent in thermal conductivity such as carbon-based materials.

As shown in FIG. 5, the adapter 62 is provided with rods 621 (two pieces) that are directed downward, and the pusher base 33 of the pusher 30 is supported and fixed by the rods 621. As shown in FIG. 3, each adapter 62 is elastically held by the match plate 60, and the match plate 60 is positioned above the test head 5 and between the pusher 30 and the socket 40. Is installed so that it can be inserted. The pusher 30 held by the match plate 60 is movable in the Z-axis direction with respect to the test head 5 or the drive plate (drive body) 72 of the Z-axis drive device 70.

Note that the test tray is conveyed between the pusher 30 and the socket 40 from the direction perpendicular to the paper surface (X axis) in FIG. As a means for transporting the test tray inside the chamber 100, a transport roller or the like is used. When the test tray is moved, the drive plate of the Z-axis drive device 70 is raised along the Z-axis direction, and there is a sufficient gap between the pusher 30 and the socket 40 to insert the test tray. It is formed.

As shown in FIG. 3, a pressing portion 74 is fixed to the lower surface of the drive plate 72 so that the upper surface of the adapter 62 held on the match plate 60 can be pressed. A drive shaft 78 is fixed to the drive plate 72, and a drive source (not shown) such as a motor is connected to the drive shaft 78. The drive shaft 78 is moved up and down along the Z-axis direction. The adapter 62 can be pressed.

In the present embodiment, in the chamber 100 configured as described above, as shown in FIGS. 3 and 6, the temperature adjusting blower is placed inside the sealed casing 80 constituting the test chamber 102. 90 and a temperature sensor 82 are provided.

[0064] The temperature adjusting blower 90 includes a fan 92 and a heat exchanging portion 94. The air inside the casing is sucked by the fan 92 and is discharged through the heat exchanging portion 94 into the casing 80 for circulation. As a result, the inside of the casing 80 is brought to a predetermined temperature condition (high temperature or low temperature).

[0065] When the inside of the casing is heated to a high temperature, the heat exchanging portion 94 of the temperature adjusting blower 90 is configured by a heat dissipating heat exchanger or an electric heater through which a heating medium flows, and the inside of the casing is, for example, Provide enough heat to maintain a high temperature of room temperature to 160 ° C It is possible to do. In addition, when the inside of the casing is cooled, the heat exchanging portion 94 is composed of a heat absorption heat exchanger ^^ through which a refrigerant such as liquid nitrogen circulates, and the inside of the casing is, for example, about -60 ° C to room temperature It is possible to absorb a sufficient amount of heat to maintain a low temperature. The temperature inside the casing 80 is detected by the temperature sensor 82, and the air volume of the fan 92 and the heat quantity of the heat exchanging section 94 are controlled so that the inside of the casing 80 is maintained at a predetermined temperature.

[0066] Hot air or cold air (air) generated through the heat exchanging portion 94 of the temperature adjusting blower 90 flows along the Y-axis direction in the upper part of the casing 80, and is opposite to the temperature adjusting blower device 90. It descends along the side wall of the casing, returns to the temperature adjusting blower 90 through the gap between the match plate 60 and the test head 5, and circulates inside the casing.

[0067] The temperature adjusting blower 90 and the temperature sensor 82 are electrically connected to the temperature controller 93 (see FIG. 6).

[0068] In this embodiment, the temperature application device for the pusher 30 corresponds to the temperature adjusting blower 90, but the present invention is not limited to this, and a heater, a cooling element, etc. provided directly on the pusher are not limited thereto. Even so.

[0069] Fourth, parts related to the unloader unit 400 will be described.

The unloader unit 400 shown in FIG. 2 is also provided with an XY transport device 404, 404 having the same structure as the XY transport device 304 provided in the loader unit 300. By this XY transport device 404, 404, Test tray transported to unloader section 400 Tested IC devices are transshipped to force stapling tray.

As shown in FIG. 2, on the device substrate 105 of the unloader unit 400, a pair of window units 406, 406 are arranged so that the customer tray conveyed to the unloader unit 400 faces the upper surface of the device substrate 105. There are two pairs.

[0071] Below each window 406 is an elevator 20 for raising and lowering the customer tray.

In this case, the IC device under test has been reloaded and loaded with a full customer tray, and this full tray is transferred to the tray transfer arm 205. Here, with reference to FIG. 6, the temperature control method of the IC device 2 in the IC device test apparatus 10 will be described. In FIG. 6, the same reference numerals as those in FIG. 10 indicate or mean the same reference numerals as in FIG. First, the explanation will be made excluding the heat generation factor accompanying the power consumption of the IC device 2 itself.

[0073] As shown in FIG. 6, inside the casing 80 of the test chamber 102, a temperature adjusting air supply device 90, a temperature sensor 82, a pusher 30, a temperature sensor 311, an IC device 2, and a soot And the temperature sensor 45 are located outside the casing 80 of the test chamber 102. The test head 5, the temperature application device 91, and the temperature controller 93 are located outside the casing 80.

Note that the temperature sensor 311, the temperature sensor 45, and the temperature application device 91 correspond to all the pushers 30 or sockets 40, that is, correspond to the number of IC devices 2 to be measured simultaneously (for example, 64). There is no need to be provided. Normally, the temperature of all the pushers 30 and the temperature of the temperature application device 91 are designed to be uniform, but the air circulating inside the casing 80 is heated uniformly to all the pushers 30 (heat sink 35). Conditions or cooling conditions may not be maintained. Therefore, if the temperature of each part is measured in advance with a temperature measurement device and the temperature condition of the IC device 2 under test is greater than or equal to the specified temperature difference (for example, 2 ° C or more) based on the measurement results, It is desirable to provide a temperature sensor 311, a temperature sensor 45 or a temperature application device 91. Further, the temperature sensor 311 or the temperature sensor 45 may be provided in a distributed manner with a smaller number than the number of the sockets 40 or only one, and only one temperature applying device 91 may be provided. The sensors 311 or the temperature sensors 45 are provided in a distributed number smaller than the number of the sockets 40, and the temperature application device 91 is located at a position corresponding to the temperature sensor 311 or the temperature sensor 45. The same number as 45 may be provided.

[0075] First, the temperature controller 93 controls the air circulating inside the casing 80 of the test chamber 102 to maintain a predetermined temperature (eg, 120 ° C) based on the temperature sensor 82. .

Second, the temperature controller 93 controls the temperature application condition of the temperature application device 91 based on the temperature sensor 45 provided in the socket 40, and the temperature applied to the socket 40 by the temperature application device 91 is controlled. To be the same as the temperature inside the test chamber 102 (for example, 120 ° C) Perform temperature control. As a result, the temperature of the socket 40 becomes the same as the temperature inside the test chamber 102 (for example, 120 ° C.). That is, the temperature state of each observation point (T2, T3, T9, T4) can be set to the same temperature as in the characteristic C2 shown in FIG. In the conventional configuration shown in Fig. 10, there is a temperature gradient as shown by characteristic C1 in Fig. 8 at each observation point.

As a result of the temperature control, the heat propagation F2 (pusher 30 to IC device 2) and F3 (IC device 2 to socket 4) become almost zero. That is, since there is no temperature difference between the pusher 30 and the IC device 2 to be tested, the heat propagation F2 becomes zero, and the temperature sensor 311 is related to the variation factor of the thermal resistance HR2 between the pusher 30 and the IC device 2. The measured temperature value can be accurately measured as the temperature T9 of the IC device 2 under test. As a result, the target set temperature T8 can be accurately reflected in the temperature T9 of the IC device 2 under test as it is.

[0078] Further, according to the temperature control method, a plurality of target set temperatures T8 to be applied to the IC device 2 (for example, + 120 ° C, + 115 ° C, + 110 ° C, 0 ° C, -25 °) C) Even in some cases, the temperature T9 of the IC device 2 can be controlled to each target set temperature T8. In particular, according to the above temperature control method, if each target set temperature T8 is set, the set temperature T2 in each chamber is automatically determined, and the temperature adjusting blower 9 0 is determined based on the set temperature T2 in the chamber. Can be controlled. Thus, the convenience for the user is very high.

Here, it is assumed that the pusher 30 can stop in a state where it contacts the IC device 2 at a non-contact position where the connection terminal of the IC device 2 does not contact the probe pin 44. In such a non-contact position, there is no heat propagation F3 due to heat conduction from the IC device 2 to the probe pin 44, so the set temperature T2 in the chamber and the temperature detected by the temperature sensor 311 are substantially the same temperature. It becomes. After this state, the pusher 30 is moved to a contact position where the connection terminal of the IC device 2 contacts the probe pin 44. In this contact state, the temperature is controlled by the temperature application device 91 so that the temperature detected by the temperature sensor 311 does not drop or rise, and the applied power value to the temperature application device 91 at that time can be obtained. As a result, the control condition of the temperature application device 91 that eliminates the temperature gradient is obtained. In this case, since the temperature sensor 45 of the socket 40 is not necessary, the temperature sensor 45 of the socket 40 may be an optional element if desired. Next, a method of controlling the temperature T9 of the IC device 2 when the temperature of the IC device 2 increases with internal power consumption will be described with reference to FIGS.

As shown in FIG. 9, protective diodes Dl and D2 for protecting the integrated circuit from static electricity are provided at the input terminal or output terminal of the IC device 2 such as CMOS. The transition characteristics of the forward voltage of the protection diodes Dl and D2 are almost known depending on the form of the integrated circuit, and have a temperature characteristic of 2.4 mVZ ° C, for example. Therefore, the junction temperature (junction temperature) of the integrated circuit can be known by measuring the voltage of the protection diode D1 (or protection diode D2).

The voltages of the protective diodes Dl and D2 can be measured by the test main device 6.

For example, in the output line of the driver DR provided in the test head 5 to apply a current to the probe pin 44, the relay RY1 switches to the current application voltage measurement device (ISVM) provided in the test main device 6 and switches to the protection diode D1. In contrast, apply a small constant current (eg 0.1 mA) that prevents IC device 2 from rising in temperature, and measure the forward voltage of protection diode D1 at that time using ISVM. Instead of ISVM, another device that can measure the forward voltage of protection diode D1 can be used.

[0083] The first method for measuring the amount of increase in the internal temperature or junction temperature of IC device 2 is to first turn off the power supply to IC device 2 (no power). The temperature application device 91 is controlled under the temperature conditions, and in this state, for example, the constant voltage il is passed through the protection diode D1 by the ISVM to measure the forward voltage Via. Next, supply power to IC device 2, and measure the forward voltage Vlb of protection diode Dl using IS VM while the internal temperature of IC device 2 rises and stabilizes. From the measured voltage difference (Via – Vlb), the temperature rise Tp (see characteristic C3 shown in Fig. 8) can be easily obtained. For example, assuming a temperature characteristic of -2.4 mVZ ° C and a voltage difference of 25.2 mV, 25.2 / 2.4 = 10.5 ° C is obtained as the rising temperature value Tp.

[0084] Note that the forward voltage Vlb measurement is based on the earth circuit, so it is desirable to consider that the measurement accuracy is not adversely affected by the noise on the earth circuit side. Yes. For example, it is desirable that the average value measured several times is the forward voltage Vlb.

[0085] Another method for measuring the forward voltage Vlb is to increase the internal temperature of IC device 2. After rising and stabilizing, the power supply to IC device 2 is turned off, and immediately after that, the constant current il is supplied and the forward voltage Via is measured. According to this method, it is possible to practically measure the forward voltage Via even in the IC device 2 with high power consumption.

[0086] Note that the thermal time constant of the IC device 2 is obtained by continuously measuring the temperature change of the IC device 2 with ISVM immediately after the power supply to the IC device 2 is turned off. be able to. Therefore, the amount of decrease in junction temperature due to a time delay of several tens of milliseconds from when the power supply to IC device 2 is turned off until the actual measurement by I SVM is completed can also correct the above thermal time constant force. The junction temperature of IC device 2 in the power-on state can be accurately obtained.

[0087] If the rising temperature value Tp of the IC device 2 can be obtained as described above, the set temperature Τ2 in the chamber may be set to a value obtained by subtracting the rising temperature value Tp from the target setting temperature Τ8. For example, if the target set temperature T8 is + 120 ° C and the rising temperature value Tp is 10.5 ° C, the chamber set temperature T2 may be set to 1 20-10.5 = 109.5 ° C. However, more accurate set values should be confirmed by operating under actual temperature conditions and correcting as appropriate.

[0088] According to the above temperature control method, if the target set temperature T8 is set, the in-chamber set temperature T2 is determined, and the temperature adjusting blower 90 can be controlled based on the in-chamber set temperature T2. . As a result, even if the temperature of the IC device 2 rises with internal power consumption, the IC device 2 can be controlled to the target temperature by setting the target set temperature T8. Thus, the convenience for the user is even higher.

[0089] Further, according to the above temperature control method, the IC device 2 can be accurately judged even near the boundary of the pass / fail judgment of the IC device 2 having a large temperature dependency. When ranking into categories according to characteristics, it is possible to rank more accurately and further improve quality.

[0090] As an application, the transition characteristic of the forward voltage of the protective diode D1 in the IC device 2 (for example, 600 mV-2.4 mVZ ° C) is measured in advance with another measuring instrument, so that the junction temperature The correlation between the transition and the transition of the forward voltage of the protective diode D1 can be seen. Therefore, from the measurement of the forward voltage Vlb of the protection diode D1 by ISVM, the IC You can know the junction temperature Tj of chair 2. In this case, since the junction temperature Tj of the IC device 2 can be measured at any time, the temperature control of the test temperature applied to the IC device 2 can be accurately performed, so that an advantage can be obtained. When measuring the junction temperature Tj of the IC device 2 by this method, the temperature sensor 311 can be omitted. However, in order to measure the junction temperature Tj of IC device 2, it is necessary to temporarily interrupt the test of IC device 2.

[0091] If the correlation between the transition of the junction temperature of IC device 2 and the transition of the forward voltage of protection diode D1 is obtained in advance, both temperature sensor 311 and temperature sensor 45 are omitted if desired. Is possible. That is, the junction of the IC device 2 is controlled while changing and controlling the temperature application condition of the temperature application device 91 so that the characteristic C2 shown in FIG. 8 is obtained with respect to a predetermined temperature (for example, 120 ° C.) of the set temperature T2 in the chamber. Measure temperature Tj. When the junction temperature Tj to be measured becomes constant at the predetermined temperature (120 ° C), the temperature application condition of the temperature application device 91 at that time is obtained as the setting condition for the predetermined temperature (120 ° C).

[0092] The embodiments described above are described for facilitating understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

Industrial applicability

The electronic component test apparatus and temperature control method of the present invention are useful for performing tests that require accurate temperature control of electronic components.

Claims

The scope of the claims

[1] A chamber that heats and Z or cools an electronic component to a predetermined temperature, and is mechanically and electrically connected to a test head outside the chamber, and is disposed in the chamber. Electronic component testing device with a socket that can be connected

An electronic component testing apparatus comprising: an external temperature application device for heating and Z or cooling the socket from the outside of the chamber so that the socket has substantially the same temperature as the temperature in the chamber.

[2] When the set temperature in the chamber when the target temperature is set to the electronic component during the test is the set temperature in the chamber,

A predetermined temperature set in the chamber corresponding to a plurality of different set temperatures of the electronic component is obtained in advance, and the chamber is heated and Z or cooled based on the set temperature set in each chamber obtained above. Item 1. The electronic component testing apparatus according to item 1.

[3] The apparatus further comprises a temperature rise measuring means for measuring the temperature rise of the junction temperature of the electronic component that rises when power is supplied to the electronic component during the test,

2. The electronic component testing apparatus according to claim 1, wherein the temperature in the chamber is controlled based on the temperature increase obtained by the temperature increase measuring means.

[4] The electronic device further includes a first temperature sensor for detecting a package temperature or a junction temperature of the electronic component, and a second temperature sensor for detecting the temperature of the socket,

2. The electronic component test apparatus according to claim 1, wherein the external temperature application device is controlled based on temperatures detected by the first temperature sensor and the second temperature sensor.

[5] The electronic device further includes a first temperature sensor for detecting a package temperature or a junction temperature of the electronic component,

2. The electronic component testing apparatus according to claim 1, wherein the external temperature applying device is controlled based on the temperature detected by the first temperature sensor.

[6] The first temperature sensor is provided inside a pusher that presses the electronic component against the socket, or a portion that contacts the electronic component in the pusher. 6. The electronic component testing apparatus according to claim 4, wherein the electronic component testing apparatus is characterized.

7. The electronic component testing apparatus according to claim 4 or 5, wherein a protection diode formed on an input terminal or an output terminal of the electronic component is used as the first temperature sensor.

[8] A plurality of the sockets are provided,

The first temperature sensors are distributed in a smaller number than the number of the sockets, or only one is provided,

6. The claim 4 or 5, wherein only one external temperature application device is provided, and the plurality of sockets are collectively heated and Z or cooled by the single external temperature application device. Electronic component testing equipment.

[9] A plurality of the sockets are provided,

The first temperature sensors are distributed in a number smaller than the number of the sockets,

The same number of external temperature application devices as the first temperature sensors are provided at positions corresponding to the first temperature sensors, and the plurality of sockets are heated and Z or Z by the number of external temperature application devices. 6. The electronic component testing apparatus according to claim 4, wherein the electronic component testing apparatus is cooled.

[10] The apparatus further comprises a junction temperature detecting means for detecting an increase in temperature of the junction temperature of the electronic component accompanying power consumption of the electronic component itself,

The temperature in the chamber is controlled based on the amount of temperature increase obtained by the junction temperature detecting means so that the temperature of the electronic component is required at the time of the test. The electronic component testing apparatus described.

[11] A chamber that heats and Z or cools the electronic component to a predetermined temperature, and is mechanically and electrically connected to a test head outside the chamber, and is disposed in the chamber. An electronic component testing apparatus comprising a socket that can be connected to the socket and a pusher that presses the electronic component against the socket,

An external temperature applying device for heating and Z or cooling the socket from outside the chamber; A temperature sensor for detecting a package temperature or a junction temperature of the electronic component, and

The pusher can control the electronic component into a non-contact position state where the terminal of the electronic component does not contact the socket and a contact position state where the terminal of the electronic component contacts the socket;

The external temperature application device is controlled so that the first temperature value of the temperature sensor in the non-contact position state and the second temperature value of the temperature sensor in the contact position state are substantially the same. An electronic component testing apparatus characterized by that.

[12] A chamber that heats and Z or cools the electronic component to a predetermined temperature, and is mechanically and electrically connected to a test head outside the chamber, and is disposed in the chamber. Temperature control method in an electronic component testing apparatus equipped with a socket that can be connected electrically,

A temperature control method in an electronic component test apparatus, wherein the socket is heated and Z or cooled from the outside of the chamber so that the socket has substantially the same temperature as the temperature in the chamber.

[13] When the set temperature in the chamber when the target temperature is set for the electronic component during the test is the set temperature in the chamber,

A predetermined temperature set in the chamber corresponding to a plurality of different set temperatures of the electronic component is obtained in advance, and the chamber is heated and Z or cooled based on the set temperature set in each chamber. Item 13. A temperature control method for an electronic device test apparatus according to Item 12.

[14] Measure the temperature rise of the junction temperature of the electronic component when power is supplied to the electronic component, and based on the measured temperature rise, the temperature in the chamber and Z or 13. The temperature control method for an electronic component test apparatus according to claim 12, wherein the temperature of the socket is controlled.

[15] The package temperature or the junction temperature of the electronic component and the temperature of the socket are detected, and the temperature of the socket is controlled based on the detected temperatures of both the detected temperature. The temperature control method in the electronic component test apparatus of description.

16. The temperature control method for an electronic component test apparatus according to claim 12, wherein the temperature of the socket is controlled based on the detected temperature by detecting a package temperature or a junction temperature of the electronic component.

[17] The temperature rise amount of the junction temperature of the electronic component accompanying power consumption of the electronic component itself is measured, and the temperature in the chamber is controlled based on the measured temperature rise amount. Item 13. A temperature control method for an electronic device test apparatus according to Item 12.

[18] A chamber that heats and Z or cools the electronic component to a predetermined temperature, and is mechanically and electrically connected to a test head outside the chamber, and is disposed in the chamber. A temperature control method in an electronic component testing apparatus comprising:

Measuring a first temperature value of the electronic component in a non-contact position where the terminal of the electronic component does not contact the socket;

Measuring a second temperature value of the electronic component in a contact position where the terminal of the electronic component contacts the socket;

Heating and Z or cooling the socket from the outside of the chamber so that the first temperature value and the second temperature value are substantially the same;

The temperature control method in the electronic component test apparatus characterized by the above-mentioned.