JP4514787B2 - Electronic component testing apparatus and temperature control method in electronic component testing apparatus - Google Patents

Description

  The present invention relates to an apparatus for testing an electronic component such as an IC device, and relates to an electronic component test apparatus capable of controlling the temperature of the electronic component, and a temperature control method in the electronic component test apparatus.

  In the manufacturing process of electronic components such as IC devices, a test apparatus for testing the finally manufactured electronic components is required. As one type of such a test apparatus, an apparatus for testing a plurality of IC devices at a time under a temperature condition (thermal stress condition) higher or lower than normal temperature is known.

  In the above test apparatus, a test chamber is formed on the upper part of the test head, and a test tray for holding a plurality of IC devices that are similarly set to a predetermined set temperature while controlling the inside of the test chamber to a predetermined set temperature by air. The IC device is transported to a socket on the test head, where the IC device is pressed against the socket by a pusher, and the test is performed. Under such heat stress, the IC device is tested and divided into at least a good product and a defective product.

  FIG. 10 is a conceptual diagram illustrating an example of a temperature control method for an IC device in a conventional test apparatus. As shown in FIG. 10, a temperature adjusting blower 90, a temperature sensor 82, a pusher 30, an IC device 2, and a socket 40 are located inside a test chamber casing 80, and the test chamber casing 80. The test head 5 and the temperature controller 88 are located outside the 80. A desired temperature can be maintained in the test chamber casing 80 based on a temperature sensor 82.

  In this test apparatus, the target set temperature (target set temperature) to be applied to the IC device under test (DUT) is T8, the actual internal temperature of the DUT (DUT temperature) is T9, and the target temperature is set in the test chamber. The set temperature in the chamber is T2, the temperature of the pusher 30 (pusher temperature) is T3, the temperature of the socket 40 (socket temperature) is T4, and the temperature of the test head 5 in the ambient temperature is T6. . Here, as a specific example of the high temperature test, it is assumed that the target set temperature T8 = 120 ° C., the test head temperature T6 = 70 ° C., and the operation is performed at the in-chamber set temperature T2 = 120 ° C. In this case, it is assumed that there is a temperature difference of 120 ° C.−70 ° C. = 50 ° C. between the chamber set temperature T2 and the test head temperature T6. With the presence of this temperature difference, the heat flow (heat propagation) F1 (atmosphere to pusher 30) → F2 (pusher 30 to IC device 2) → F3 (IC device 2 to socket 40) as shown in FIG. 10 → F4 (socket 40 to test head 5) is generated.

  On the other hand, as shown in FIG. 10, a thermal resistance HR1 is provided between the atmosphere in the chamber and the pusher 30, a thermal resistance HR2 is provided between the pusher 30 and the IC device 2, and a gap between the IC device 2 and the probe pin. There is a thermal resistance HR3, a thermal resistance HR4 between the probe pin and the socket 40, and a thermal resistance HR5 between the socket 40 and the test head 5. In particular, the thermal resistances HR2 and HR3 are not always constant because the state in which the pusher 30 presses the IC device 2 may be different each time. Therefore, the DUT temperature T9 is not always a constant state, and there is a problem that it becomes an unknown temperature state. Further, the DUT temperature T9 is affected by the heat generation factor accompanying the power consumption of the DUT itself.

  By the way, the target set temperature T8 varies depending on the test item and the type of IC device 2 (for example, + 120 ° C., + 85 ° C., + 40 ° C., 0 ° C., −25 ° C., etc.). Therefore, it is necessary to obtain in advance the setting conditions for the in-chamber set temperature T2 so that the DUT has the corresponding target set temperature T8. For this reason, a dummy device (dedicated device) in which a temperature sensor is embedded under the same conditions as the device type to be tested is used. That is, the dummy device is placed under the same conditions as the actual test, and the DUT temperature T9 of the dummy device is measured. Then, the set temperature T2 in the chamber is sequentially changed, and the temperature is measured in a stable temperature state. Eventually, the in-chamber set temperature T2 when the actually measured DUT temperature T9 becomes the target set temperature T8 is stored and saved as the set condition for the device. Based on the chamber set temperature T2 stored in this manner, the DUT is controlled to the target set temperature T8 and the test is performed.

  However, in the above method, it is necessary to manufacture a dedicated device for temperature measurement for each type of IC device 2, which is troublesome. In addition, since the contact thermal resistance at the contact portion between the pusher 30 and the DUT and the temperature condition of the test head temperature T6 may change, the DUT may not be an accurate target set temperature T8 in an actual test. For this reason, there is a difficulty in reliability with respect to temperature management of the DUT temperature.

  The present invention has been made in view of such a situation, and an electronic component testing apparatus capable of accurately performing temperature management or temperature control of an electronic component without requiring a dedicated device for temperature measurement. And it aims at providing a temperature control method.

  In order to achieve the above object, firstly, the present invention includes a chamber for heating and / or cooling an electronic component to a predetermined temperature, a mechanically and electrically connected to a test head outside the chamber, and the chamber An electronic component testing apparatus comprising a socket that is disposed within and capable of being electrically connected to a connection terminal of an electronic component, wherein the socket is arranged so that the socket has a temperature substantially equal to the temperature in the chamber. Provided is an electronic component testing apparatus comprising an external temperature applying device for heating and / or cooling from the outside of the chamber (Invention 1).

  According to the said invention (invention 1), since the escape of heat from the socket can be prevented, the temperature gradient between the pusher located in the chamber and the electronic device under test can be substantially eliminated. Therefore, when the pusher is provided with a temperature sensor, the temperature of the electronic device under test can be accurately measured by the pusher temperature sensor without being affected by the unknown thermal resistance between the pusher and the electronic device under test. it can. As a result, the temperature control of the electronic component can be more accurately performed based on the measured value.

  In the above invention (Invention 1), the chamber corresponding to a plurality of different set temperatures of the electronic component when the set temperature in the chamber when the electronic component is set to the target set temperature during the test is set as the set temperature in the chamber. It is preferable that an internal set temperature is obtained in advance, and the chamber is heated and / or cooled based on the internal set temperature obtained above (Invention 2). According to this invention (Invention 2), it is possible to control the electronic device under test to a plurality of set temperatures.

  In the said invention (invention 1), it is further equipped with the temperature rise measuring means which measures the said temperature rise amount of the junction temperature (internal temperature) of the said electronic component which rises when the electric power at the time of a test is supplied to an electronic component. It is preferable to control the temperature in the chamber based on the temperature increase obtained by the temperature increase measuring means (Invention 3). According to this invention (Invention 3), it is possible to control the electronic device under test to a desired set temperature even when the electronic component self-heats during testing.

  In the said invention (invention 1), it further has the 1st temperature sensor which detects the package temperature or junction temperature (internal temperature) of an electronic component, and the 2nd temperature sensor which detects the temperature of the said socket. Preferably, the external temperature application device is controlled based on the temperatures detected by the first temperature sensor and the second temperature sensor (Invention 4). According to this invention (invention 4), the temperature of the socket can be easily controlled by the external temperature application device by detecting the temperature of the socket by the second temperature sensor.

  In the said invention (invention 1), it further has the 1st temperature sensor which detects the package temperature or junction temperature (internal temperature) of an electronic component, and based on the temperature detected by the 1st temperature sensor, The external temperature application device may be controlled (invention 5).

  In the said invention (invention 1), the said 1st temperature sensor may be provided in the site | part which contacts an electronic component in the inside of the pusher which presses the said electronic component with respect to the said socket, or the said pusher (invention). 6) As the first temperature sensor, a protection diode formed on an input terminal or an output terminal of the electronic component may be used (invention 7).

  In the above invention (Invention 1), a plurality of the sockets are provided, and the first temperature sensors are distributed in a smaller number than the number of the sockets, or only one is provided. Only one external temperature application device is provided, and the plurality of sockets may be heated and / or cooled collectively by the single external temperature application device (Invention 8).

  In the above invention (Invention 1), a plurality of the sockets are provided, the first temperature sensors are provided in a distributed number smaller than the number of the sockets, and the external temperature applying device is The same number as the first temperature sensor is provided at a position corresponding to the first temperature sensor, and the plurality of sockets may be heated and / or cooled by the number of external temperature application devices (invention 9). ).

  In the said invention (invention 1), it is further provided with the junction temperature detection means which detects the temperature rise amount of the junction temperature (internal temperature) of the said electronic component accompanying the power consumption of the electronic component itself, The said junction The temperature in the chamber may be controlled based on the temperature increase obtained by the part temperature detection means so that the temperature of the electronic component is required during the test (Invention 10).

  Secondly, the present invention is mechanically and electrically connected to a chamber for heating and / or cooling an electronic component to a predetermined temperature, and a test head outside the chamber, and is disposed in the chamber. An electronic component testing apparatus comprising a socket that can be electrically connected to a connection terminal, and a pusher that presses the electronic component against the socket, wherein the socket is heated and / or cooled from outside the chamber. An external temperature application device; and a temperature sensor that detects a package temperature or a junction temperature of the electronic component, and the pusher is configured to contact the electronic component without contact with the socket of the electronic component. The temperature sensor in the non-contact position state can be controlled to a position state and a contact position state in which the terminal of the electronic component contacts the socket An electronic component testing apparatus, characterized in that the external temperature application device is controlled so that a first temperature value and a second temperature value of the temperature sensor in the contact state are substantially the same. (Invention 11)

  According to the above invention (Invention 11), the escape of heat from the socket can be prevented, so that the temperature gradient between the pusher located in the chamber and the electronic device under test can be substantially eliminated. Therefore, when the pusher is provided with a temperature sensor, the temperature of the electronic device under test can be accurately measured by the pusher temperature sensor without being affected by the unknown thermal resistance between the pusher and the electronic device under test. it can. As a result, the temperature control of the electronic component can be more accurately performed based on the measured value.

  Thirdly, the present invention is mechanically and electrically connected to a chamber for heating and / or cooling an electronic component to a predetermined temperature and a test head outside the chamber, and is disposed in the chamber, A temperature control method in an electronic component testing apparatus including a socket that can be electrically connected to a connection terminal, wherein the socket is arranged outside the chamber so that the socket has a temperature substantially equal to the temperature in the chamber. A temperature control method in an electronic component test apparatus, characterized in that heating and / or cooling is performed (Invention 12).

  In the above invention (Invention 12), the chamber corresponding to a plurality of different set temperatures of the electronic component when the set temperature in the chamber when the electronic component is set to the target set temperature during the test is set as the set temperature in the chamber. It is preferable that an internal set temperature is obtained in advance, and the chamber is heated and / or cooled based on the internal set temperature obtained above (Invention 13).

  In the said invention (invention 12), when the electric power at the time of a test is supplied to an electronic component, the temperature rise amount of the junction temperature (internal temperature) of the said electronic component is measured, and the said temperature rise amount is based on the measured temperature rise amount. It is preferable to control the temperature in the chamber and / or the temperature of the socket (Invention 14).

  In the above invention (Invention 12), the temperature of the socket is controlled based on the detected temperature of the electronic component package or junction temperature (internal temperature) and the temperature of the socket. Preferred (Invention 15).

  In the above invention (Invention 12), the package temperature or the junction temperature (internal temperature) of the electronic component may be detected, and the temperature of the socket may be controlled based on the detected temperature (Invention 16).

  In the said invention (invention 12), the temperature rise amount of the junction temperature (internal temperature) of the electronic component accompanying the power consumption of the electronic component itself is measured, and the temperature in the chamber is measured based on the measured temperature rise amount. Is preferably controlled (Invention 17).

  Fourthly, the present invention is mechanically and electrically connected to a chamber for heating and / or cooling an electronic component to a predetermined temperature, and a test head outside the chamber, and is disposed in the chamber. A temperature control method in an electronic component testing apparatus including a socket that can be electrically connected to a connection terminal, wherein the first electronic component is in a non-contact position state where the terminal of the electronic component does not contact the socket. A temperature value is measured, a second temperature value of the electronic component is measured in a contact position where the terminal of the electronic component contacts the socket, and the first temperature value and the second temperature value are approximately Provided is a temperature control method in an electronic component test apparatus, wherein the socket is heated and / or cooled from the outside of the chamber so as to be the same (Invention 18).

  ADVANTAGE OF THE INVENTION According to this invention, the temperature management or temperature control of the electronic component in an electronic component test apparatus can be performed simply and correctly.

1 is an overall side view of an IC device test apparatus according to an embodiment of the present invention. It is a perspective view of the handler in the embodiment. It is principal part sectional drawing in the test chamber of the handler in the embodiment. It is a disassembled perspective view which shows the structure of the pusher and socket vicinity in the same embodiment. It is a fragmentary sectional view showing the structure near a pusher and a socket in the embodiment. It is a conceptual diagram showing the temperature control method of the IC device in the same embodiment. It is a figure which shows the example of installation of the temperature sensor in a pusher. It is a graph (temperature characteristic graph) which shows the temperature in each observation point. It is a circuit diagram for detecting the temperature of an IC device using a protection diode inside the IC device. It is a conceptual diagram showing the temperature control method of the IC device in the conventional IC device test apparatus.

Explanation of symbols

1 ... Handler (electronic parts handling device)
2 ... IC devices (electronic components)
DESCRIPTION OF SYMBOLS 10 ... IC device (electronic component) test apparatus 30 ... Pusher 40 ... Socket 311, 45, 82 ... Temperature sensor 90 ... Air blower for temperature control

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, an overall configuration of an IC device test apparatus including a handler according to an embodiment of the present invention will be described. As shown in FIG. 1, the IC device test apparatus 10 includes a handler 1, a test head 5, and a test main apparatus 6. The handler 1 sequentially carries IC devices (an example of electronic components) to be tested to a socket provided in the test head 5, classifies the IC devices that have been tested according to the test results, and stores them in a predetermined tray. To do.

  The socket provided in the test head 5 is electrically connected to the test main device 6 through the cable 7, and the IC device detachably attached to the socket is connected to the test main device 6 through the cable 7, The IC device is tested by a test electrical signal from the test main apparatus 6.

  A control device that mainly controls the handler 1 is built in the lower portion of the handler 1, but a space portion 8 is provided in part. The test head 5 is replaceably disposed in the space portion 8, and an IC device can be attached to a socket on the test head 5 through a through hole formed in the handler 1.

  The handler 1 is an apparatus for testing an IC device as an electronic component to be tested in a temperature state (high temperature) higher than normal temperature or a low temperature state (low temperature). The handler 1 is as shown in FIG. The chamber 100 includes a constant temperature bath 101, a test chamber 102, and a heat removal bath 103. The upper portion of the test head 5 is inserted into the test chamber 102 as shown in FIG. 3, where the IC device 2 is tested.

  As shown in FIG. 2, the handler 1 of this embodiment stores an IC device to be tested from now on, an IC storage unit 200 that classifies and stores tested IC devices, and is sent from the IC storage unit 200. A loader unit 300 for feeding an IC device under test into the chamber unit 100, a chamber unit 100 including a test head, and an unloader unit 400 for taking out and classifying tested ICs that have been tested in the chamber unit 100. Yes.

  A large number of IC devices before being set in the handler 1 are stored in the customer tray. In this state, the IC devices are supplied to the IC storage unit 200 of the handler 1 shown in FIG. The IC device 2 is transferred to the test tray (indicated by TST in FIG. 3) that is transported in (1). Inside the handler 1, the IC device moves while being placed on the test tray, is subjected to high or low temperature stress, is tested for proper operation, and is classified according to the test result. Hereinafter, the inside of the handler 1 will be described individually.

First, parts related to the IC storage unit 200 will be described.
As shown in FIG. 2, the IC storage unit 200 includes a pre-test IC stocker 201 that stores pre-test IC devices and a tested IC stocker 202 that stores IC devices classified according to the test results. It is provided.

  The pre-test IC stocker 201 and the tested IC stocker 202 include a frame-shaped tray support frame 203 and an elevator 204 that enters from the bottom of the tray support frame 203 and can be moved up and down. Yes. A plurality of customer trays are stacked and supported on the tray support frame 203, and only the stacked customer trays are moved up and down by the elevator 204.

  In the pre-test IC stocker 201 shown in FIG. 2, customer trays containing IC devices to be tested are stacked and held. The tested IC stocker 202 has a stack of customer trays in which IC devices classified after finishing the test are stored.

Secondly, parts related to the loader unit 300 will be described.
As shown in FIG. 2, the customer tray stored in the tray support frame 203 of the pre-test IC stocker 201 is stored in the loader unit 300 by a tray transfer arm 205 provided between the IC storage unit 200 and the apparatus substrate 105. It is carried to the window portion 306 from the lower side of the device substrate 105. In this loader unit 300, the IC devices to be tested loaded on the customer tray are once transferred to the precursor 305 by the XY transport device 304, where the mutual positions of the IC devices to be tested are corrected. Thereafter, the IC device under test transferred to the precursor 305 is reloaded onto the test tray stopped at the loader unit 300 by using the XY transport device 304 again.

  As shown in FIG. 2, an XY transfer device 304 that reloads IC devices to be tested from the customer tray to the test tray includes two rails 301 installed on the upper portion of the device substrate 105, and the two rails 301. , A movable arm 302 that can reciprocate between the test tray and the customer tray (this direction is defined as a Y direction), and a movable head that is supported by the movable arm 302 and can move along the movable arm 302 in the X direction. 303.

  A suction head is mounted on the movable head 303 of the XY transport device 304. The suction head moves while sucking air, so that the IC device under test is sucked from the customer tray. The IC device under test is transferred to the test tray.

Thirdly, parts related to the chamber 100 will be described.
The test tray described above is loaded into the chamber 100 after IC devices to be tested are loaded by the loader unit 300, and each IC device to be tested is tested in a state of being mounted on the test tray.

  As shown in FIG. 2, the chamber 100 has a thermostatic chamber 101 that applies a target high or low temperature thermal stress to the IC device under test loaded on the test tray, and a state in which the thermal stress is applied in the thermostatic chamber 101. The test chamber 102 in which the IC device under test is mounted in the socket on the test head, and the heat removal tank 103 for removing the applied thermal stress from the IC device under test tested in the test chamber 102. ing.

  In the heat removal tank 103, when a high temperature is applied in the thermostatic chamber 101, the IC device under test is cooled by blowing to return to room temperature, and when a low temperature is applied in the thermostatic chamber 101, the IC device under test is heated with warm air. Or, it is heated with a heater or the like and returned to a temperature at which condensation does not occur. Then, the IC device to be tested after the heat removal is carried out to the unloader unit 400.

  The constant temperature bath 101 is provided with a vertical conveyance device, and a plurality of test trays are on standby while being supported by the vertical conveyance device until the test chamber 102 is empty. Mainly, during this standby, high or low temperature thermal stress is applied to the IC device under test.

  As shown in FIG. 3, a test head 5 is disposed at the lower center of the test chamber 102, and a test tray is carried on the test head 5. In this case, all the IC devices 2 held by the test tray are sequentially brought into electrical contact with the test head 5 to test all the IC devices 2 in the test tray. On the other hand, after the test is completed, the heat is removed in the heat removal tank 103, the temperature of the IC device 2 is returned to room temperature, and then discharged to the unloader unit 400 shown in FIG.

  Further, as shown in FIG. 2, an inlet opening for feeding the test tray from the apparatus substrate 105 and an outlet for sending the test tray to the apparatus substrate 105 are provided above the constant temperature bath 101 and the heat removal bath 103. Each of the openings is formed. On the apparatus substrate 105, a test tray transfer device 108 for taking in and out the test tray from these openings is mounted. These conveying devices 108 are constituted by rotating rollers, for example. The test tray discharged from the heat removal tank 103 is transferred to the unloader unit 400 by the test tray transfer device 108 provided on the apparatus substrate 105.

  A plurality of inserts 16 are attached to the test tray. In the insert 16, as shown in FIG. 4, a rectangular concave IC storage portion 19 that stores the IC device 2 to be tested is formed in the center portion. Further, guide holes 20 into which the guide pins 32 of the pusher 30 are inserted are formed in the center portions of both ends of the insert 16, and holes for mounting the test tray on the mounting pieces 14 are formed at both end corners of the insert 16. 21 is formed.

  As shown in FIG. 4, a socket board 50 is arranged on the test head 5, and a socket 40 having probe pins 44 as connection terminals is fixed thereon. The probe pins 44 are provided at a number and pitch corresponding to the connection terminals of the IC device 2 and are urged upward by a spring (not shown).

  As shown in FIG. 6, the socket 40 in this embodiment is applied with temperature by a temperature application device 91. The temperature applying device 91 may be, for example, a heater or a cooling element provided directly or indirectly on the socket 40 (for example, a ground member positioned between the socket 40 and the test head 5). There may be a device in which the main body of the socket 40 or the base of the socket 40 (the table on which the socket board 50 is mounted) is hollow and the temperature-controlled air is passed therethrough, and is not particularly limited. The temperature application device 91 is electrically connected to the temperature controller 93.

  The socket 40 is provided with a temperature sensor 45 as shown in FIG. The temperature sensor 45 is preferably provided at a position where the temperature of the socket 40 can be measured, and particularly preferably provided at a position where the temperature near the probe pin 44 can be measured. The temperature sensor 45 is electrically connected to the temperature controller 93.

  As shown in FIG. 4, a socket guide 41 is fixed on the socket board 50 so that the probe pins 44 provided on the socket 40 are exposed. On both sides of the socket guide 41, two guide pins 32 formed on the pusher 30 are inserted, and guide bushes 411 for positioning between the two guide pins 32 are provided.

  As shown in FIGS. 3 and 4, pushers 30 are provided on the upper side of the test head 5 corresponding to the number of sockets 40. As shown in FIG. 4, the pusher 30 has a pusher base 33 that is fixed to a rod 621 of an adapter 62 described later. A pusher 31 for pressing the IC device 2 under test is provided in the lower center of the pusher base 33. The pusher base 33 has a guide hole 20 of the insert 16 at both lower ends. And the guide pin 32 inserted in the guide bush 411 of the socket guide 41 is provided. Also, a stopper that can abut against the stopper surface 412 of the socket guide 41 to define a lower limit when the pusher 30 is moved downward by the Z-axis drive device 70 between the presser 31 and the guide pin 32. Pins 34 are provided.

  As shown in FIGS. 5 and 6, the pressure sensor 31 of the pusher 30 is provided with a temperature sensor 311. The temperature sensor 311 is electrically connected to the temperature controller 93. The temperature sensor 311 is preferably provided at a position where the package temperature of the IC device 2 under test is easily measured. For example, as shown in FIG. 7A, it is preferable to provide in the vicinity of the IC device 2 under test to be pressed inside the pressing element 31 of the pusher 30. Further, in order to suppress the thermal influence from the pusher 30, it is preferable that a gap (gap) 315 or a heat insulating member is interposed between the temperature sensor 311 and the pressing element 31.

  As another example, as shown in FIG. 7B, a recess 313 is formed in the lower portion of the pressing element 31, and an elastic member 312 is mediated between the temperature sensor 311 and the pressing element 31, so that the temperature sensor is pressed. 311 is configured to directly contact the package of the IC device 2 under test. According to the temperature sensor 311 having such a configuration, the temperature of the presser 31 can be measured when not pressed, and the package temperature of the IC device 2 to be tested that contacts the IC device 2 to be tested can be measured when pressed.

  A heat sink 35 is provided on the upper side of the pusher base 33. The heat sink 35 is composed of a plurality of heat radiating fins, and is made of a material having excellent thermal conductivity such as aluminum, copper, an alloy thereof, or a carbon-based material.

  As shown in FIG. 5, the adapter 62 is provided with rods 621 (two) downward, and the pusher base 33 of the pusher 30 is supported and fixed by the rods 621. As shown in FIG. 3, each adapter 62 is elastically held by the match plate 60, and the match plate 60 is positioned above the test head 5, and a test tray is provided between the pusher 30 and the socket 40. It is installed so that it can be inserted. The pusher 30 held by the match plate 60 is movable in the Z-axis direction with respect to the test head 5 or the drive plate (drive body) 72 of the Z-axis drive device 70.

  The test tray is conveyed between the pusher 30 and the socket 40 from the direction perpendicular to the paper surface (X axis) in FIG. As a transport means for the test tray inside the chamber 100, a transport roller or the like is used. When the test tray is transported, the drive plate of the Z-axis drive device 70 is raised along the Z-axis direction, and a sufficient gap for inserting the test tray is provided between the pusher 30 and the socket 40. It is formed.

  As shown in FIG. 3, a pressing portion 74 is fixed to the lower surface of the drive plate 72 so that the upper surface of the adapter 62 held on the match plate 60 can be pressed. A drive shaft 78 is fixed to the drive plate 72, and a drive source (not shown) such as a motor is connected to the drive shaft 78. The drive shaft 78 is moved up and down along the Z-axis direction, and an adapter 62 can be pressed.

  In the present embodiment, in the chamber 100 configured as described above, as shown in FIGS. 3 and 6, a temperature adjusting blower 90 and a temperature sensor are provided inside a sealed casing 80 that configures the test chamber 102. 82 is provided.

  The temperature adjusting blower 90 includes a fan 92 and a heat exchanging portion 94, sucks air inside the casing by the fan 92, discharges it into the casing 80 through the heat exchanging portion 94, and circulates the casing 80. The inside of is set to a predetermined temperature condition (high temperature or low temperature).

  The heat exchanging portion 94 of the temperature adjusting blower 90 is configured by a heat dissipation heat exchanger or an electric heater through which a heating medium flows when the inside of the casing is heated to a high temperature. It is possible to provide a sufficient amount of heat to maintain a high temperature. Further, when the inside of the casing is cooled, the heat exchanging portion 94 is composed of an endothermic heat exchanger or the like in which a refrigerant such as liquid nitrogen circulates, and the inside of the casing is cooled to a low temperature of about −60 ° C. to room temperature, for example. It is possible to absorb a sufficient amount of heat to maintain. The internal temperature of the casing 80 is detected by the temperature sensor 82, and the air volume of the fan 92 and the heat volume of the heat exchanging section 94 are controlled so that the inside of the casing 80 is maintained at a predetermined temperature.

  Hot air or cold air (air) generated through the heat exchanging portion 94 of the temperature adjusting blower 90 flows along the Y-axis direction in the upper part of the casing 80, and reaches the casing side wall opposite to the temperature adjusting blower device 90. Then, it returns to the blower 90 for temperature adjustment through the gap between the match plate 60 and the test head 5 and circulates inside the casing.

  The temperature adjusting blower 90 and the temperature sensor 82 are electrically connected to the temperature controller 93 (see FIG. 6).

  In the present embodiment, the temperature application device for the pusher 30 corresponds to the temperature adjusting blower 90, but the present invention is not limited to this, and is a heater, a cooling element or the like directly provided on the pusher. Also good.

Fourthly, parts related to the unloader unit 400 will be described.
The unloader unit 400 shown in FIG. 2 is also provided with XY transport devices 404 and 404 having the same structure as the XY transport device 304 provided in the loader unit 300. By the XY transport devices 404 and 404, Tested IC devices are transferred from the test tray carried out to the unloader unit 400 to the customer tray.

  As shown in FIG. 2, the device substrate 105 of the unloader unit 400 has two pairs of windows 406 and 406 arranged so that the customer tray conveyed to the unloader unit 400 faces the upper surface of the device substrate 105. It has been established.

  An elevator 204 for raising and lowering the customer tray is provided below each window 406. Here, the customer trays that have been filled with the tested IC devices to be tested are loaded and lowered. The full tray is transferred to the tray transfer arm 205.

  Here, with reference to FIG. 6, the temperature control method of the IC device 2 in the IC device test apparatus 10 will be described. In FIG. 6, the same reference numerals as those in FIG. 10 indicate or mean the same reference numerals as in FIG. First, a description will be given excluding heat generation factors associated with power consumption of the IC device 2 itself.

  As shown in FIG. 6, inside the casing 80 of the test chamber 102, there are a temperature adjusting blower 90, a temperature sensor 82, a pusher 30, a temperature sensor 311, an IC device 2, a socket 40, and a temperature. The sensor 45 is located, and the test head 5, the temperature application device 91, and the temperature controller 93 are located outside the casing 80 of the test chamber 102.

  The temperature sensor 311, the temperature sensor 45, and the temperature application device 91 need to be provided corresponding to all the pushers 30 or the sockets 40, that is, corresponding to the number (for example, 64) of IC devices 2 to be simultaneously measured. There is no. Normally, the temperature of all the pushers 30 and the temperature of the temperature applying device 91 are designed to be uniform, but the air circulating inside the casing 80 is uniformly heated for all the pushers 30 (heat sinks 35). Or, cooling conditions may not be maintained. Therefore, when the temperature of each part is measured in advance with a temperature measuring device and the temperature condition of the IC device 2 under test is equal to or greater than a predetermined temperature difference (for example, 2 ° C. or more), It is desirable to provide the sensor 311, the temperature sensor 45, or the temperature application device 91. Further, the temperature sensor 311 or the temperature sensor 45 may be provided in a smaller number than the number of the sockets 40 or may be provided alone, and only one temperature application device 91 may be provided, or the temperature sensor 311 may be provided. Alternatively, the temperature sensors 45 are provided in a distributed number smaller than the number of sockets 40, and the temperature applying devices 91 are provided in the same number as the temperature sensors 311 or 45 at positions corresponding to the temperature sensors 311 or 45. May be.

  First, the temperature controller 93 controls the air circulating inside the casing 80 of the test chamber 102 to maintain a predetermined temperature (for example, 120 ° C.) based on the temperature sensor 82.

  Secondly, the temperature controller 93 controls the temperature application condition of the temperature application device 91 based on the temperature sensor 45 provided in the socket 40, and the temperature applied to the socket 40 by the temperature application device 91 is adjusted inside the test chamber 102. The temperature is controlled so as to be equal to the temperature (for example, 120 ° C.). As a result, the temperature of the socket 40 becomes the same as the temperature inside the test chamber 102 (for example, 120 ° C.). That is, as in the characteristic C2 shown in FIG. 8, the temperature state of each observation point (T2, T3, T9, T4) can be set to the same temperature. In the conventional configuration shown in FIG. 10, there is a temperature gradient as shown by the characteristic C1 in FIG. 8 at each observation point.

  As a result of the temperature control, the heat propagation F2 (pusher 30 to IC device 2) and F3 (IC device 2 to socket 4) become substantially zero. That is, since there is no temperature difference between the pusher 30 and the IC device 2 to be tested, the heat propagation F2 becomes zero, and the temperature sensor 311 is independent of the variation factor of the thermal resistance HR2 between the pusher 30 and the IC device 2. The temperature value measured at can be accurately measured as the temperature T9 of the IC device 2 under test. Thereby, the target set temperature T8 can be accurately reflected in the temperature T9 of the IC device 2 under test as it is.

  Further, according to the above temperature control method, even when there are a plurality of target set temperatures T8 to be applied to the IC device 2 (for example, + 120 ° C., + 115 ° C., + 110 ° C., 0 ° C., −25 ° C., etc.) The temperature T9 of the device 2 can be controlled to each target set temperature T8. In particular, according to the temperature control method, if each target set temperature T8 is set, each set temperature T2 in the chamber is automatically determined, and the temperature adjusting blower 90 is controlled based on the set temperature T2 in the chamber. be able to. Thus, the convenience for the user is very high.

  Here, it is assumed that the pusher 30 can be stopped in a state in which the connection terminal of the IC device 2 is in contact with the IC device 2 at a non-contact position where it does not contact the probe pin 44. In such a non-contact position, there is no heat conduction from the IC device 2 to the probe pin 44, and there is no heat propagation F3. Therefore, the set temperature T2 in the chamber and the detected temperature of the temperature sensor 311 are substantially the same temperature. Become. After this state, the pusher 30 is moved to a contact position where the connection terminal of the IC device 2 contacts the probe pin 44. In this contact state, temperature control is performed by the temperature application device 91 so that the temperature detected by the temperature sensor 311 does not drop or rise, and the applied power value to the temperature application device 91 at that time can be obtained. Thereby, the control conditions of the temperature application device 91 in which the temperature gradient disappears are obtained. In this case, since the temperature sensor 45 of the socket 40 is not necessary, the temperature sensor 45 of the socket 40 may be an optional element if desired.

  Next, a method of controlling the temperature T9 of the IC device 2 when the temperature of the IC device 2 rises with internal power consumption will be described with reference to FIGS.

  As shown in FIG. 9, protective diodes D1 and D2 for protecting the integrated circuit from static electricity are provided at the input terminal or output terminal of the IC device 2 such as a CMOS. The transition characteristics of the forward voltage of the protection diodes D1 and D2 vary depending on the formation form of the integrated circuit, but are almost known and have a temperature characteristic of −2.4 mV / ° C., for example. Therefore, the junction temperature (junction temperature) of the integrated circuit can be known by measuring the voltage of the protection diode D1 (or protection diode D2).

  The voltages of the protection diodes D1 and D2 can be measured by the test main device 6. For example, in the output line of the driver DR provided in the test head 5 for applying a current to the probe pin 44, the relay RY1 switches to the current application voltage measuring device (ISVM) provided in the test main device 6, and the protection diode D1 Then, a minute constant current (for example, 0.1 mA) that does not cause the IC device 2 to rise in temperature is applied, and the forward voltage of the protective diode D1 at that time is measured by ISVM. Instead of ISVM, another device that can measure the forward voltage of the protective diode D1 can be used.

  As a first method for measuring the increase in the internal temperature or junction temperature of the IC device 2, first, the power supply to the IC device 2 is turned off (no power), and the temperature is applied to the temperature condition of the characteristic C2 shown in FIG. The device 91 is controlled, and in this state, the forward voltage V1a is measured by passing a constant current i1 through the protection diode D1, for example, by ISVM. Next, power is supplied to the IC device 2, and the forward voltage V1b of the protection diode D1 is measured by ISVM while the internal temperature of the IC device 2 rises and is stable. From the measured voltage difference (V1a−V1b), an elevated temperature value Tp (see characteristic C3 shown in FIG. 8) can be easily obtained. For example, assuming that the temperature characteristic is −2.4 mV / ° C. and the voltage difference is 25.2 mV, 25.2 / 2.4 = 10.5 ° C. is obtained as the rising temperature value Tp.

  In addition, since the measurement of the forward voltage V1b is a voltage measurement based on the ground circuit, it is desirable to consider that the measurement accuracy is not deteriorated due to the influence of noise on the ground circuit side. For example, the average value measured a plurality of times is preferably the forward voltage V1b.

  As another method of measuring the forward voltage V1b, after the internal temperature of the IC device 2 rises and stabilizes, the power supply to the IC device 2 is turned off, and immediately after that, the constant current i1 is supplied. Then, the forward voltage V1a is measured. According to this method, the forward voltage V1a can be measured practically even with the IC device 2 that consumes a large amount of power.

  Note that the thermal time constant of the IC device 2 can be obtained by continuously measuring the change in temperature of the IC device 2 immediately after the power supply to the IC device 2 is turned off by ISVM. Therefore, the amount of decrease in the junction temperature due to the time delay of several tens of milliseconds immediately after the power supply to the IC device 2 is turned off until the actual measurement by ISVM can be corrected from the thermal time constant. The junction temperature of the IC device 2 in the power ON state can be accurately obtained.

  If the rising temperature value Tp of the IC device 2 can be obtained as described above, the in-chamber set temperature T2 may be set to a value obtained by subtracting the rising temperature value Tp from the target setting temperature T8. For example, when the target set temperature T8 is + 120 ° C. and the rising temperature value Tp is 10.5 ° C., the in-chamber set temperature T2 may be set to 120-10.5 = 109.5 ° C. However, it is desirable that a more accurate set value is confirmed by operating under actual temperature conditions and appropriately corrected.

  According to the temperature control method, if the target set temperature T8 is set, the set temperature T2 in the chamber is determined, and the temperature adjusting blower 90 can be controlled based on the set temperature T2 in the chamber. As a result, even if the temperature of the IC device 2 increases with internal power consumption, the IC device 2 can be controlled to a target temperature by setting the target set temperature T8. Thus, the convenience for the user is even higher.

  Further, according to the above temperature control method, it is possible to make an accurate determination of the IC device 2 even near the boundary of the pass / fail determination of the IC device 2 having a large temperature dependence, and further, the IC device 2 is classified into categories according to characteristics. In the case of ranking, more accurate ranking can be performed and further quality improvement can be achieved.

  As an application, the transition characteristic of the forward voltage of the protection diode D1 in the IC device 2 (for example, 600 mV-2.4 mV / ° C.) is measured in advance by another measuring device, so that the transition of the junction temperature and the protection diode D1 It can be seen that there is a correlation with the forward voltage transition. Therefore, the junction temperature Tj of the IC device 2 can be directly known from the measurement of the forward voltage V1b of the protection diode D1 by ISVM. In this case, since the junction temperature Tj of the IC device 2 can be measured at any time, there is an advantage that the temperature management of the test temperature applied to the IC device 2 can be accurately performed. When measuring the junction temperature Tj of the IC device 2 by this method, the temperature sensor 311 can be omitted. However, in order to measure the junction temperature Tj of the IC device 2, it is necessary to temporarily interrupt the test of the IC device 2.

  If the correlation between the transition of the junction temperature of the IC device 2 and the transition of the forward voltage of the protective diode D1 is obtained in advance, both the temperature sensor 311 and the temperature sensor 45 can be omitted as desired. It is. That is, the junction temperature of the IC device 2 is controlled while changing and controlling the temperature application condition of the temperature application device 91 so that the characteristic C2 shown in FIG. 8 is obtained with respect to a predetermined temperature (for example, 120 ° C.) of the in-chamber set temperature T2. Tj is measured. When the junction temperature Tj to be measured becomes constant at the predetermined temperature (120 ° C.), the temperature application condition of the temperature application device 91 at that time is obtained as the setting condition for the predetermined temperature (120 ° C.).

  The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

The electronic component testing apparatus and temperature control method of the present invention are useful for performing tests that require accurate temperature control of electronic components.

Claims (12)

A chamber that heats and / or cools an electronic component to a predetermined temperature, and a mechanical and electrical connection to a test head outside the chamber, and is disposed in the chamber and electrically connected to a connection terminal of the electronic component An electronic component testing device comprising a socket capable of
A temperature application device that heats and / or cools the socket such that the socket is at substantially the same temperature as the temperature in the chamber ;
A first temperature sensor that detects a package temperature or a junction temperature of the electronic component, and a second temperature sensor that detects the temperature of the socket ;
The first on the basis of the temperature sensor and the temperature detected by the second temperature sensor in, that controls the temperature application device, an electronic device testing apparatus, characterized in that. When the set temperature in the chamber when the electronic component is set to the target set temperature during the test is the set temperature in the chamber,
The chamber set temperature corresponding to a plurality of different set temperatures of the electronic component is obtained in advance, and the chamber is heated and / or cooled based on the set temperature in each chamber obtained above. Item 1. The electronic component testing apparatus according to Item 1. A temperature rise measuring means for measuring the temperature rise of the junction temperature of the electronic component that rises when power is supplied to the electronic component during testing;
2. The electronic component testing apparatus according to claim 1, wherein the temperature in the chamber is controlled based on the temperature increase obtained by the temperature increase measuring means. The first temperature sensor of an electronic component of claim 1, wherein the electronic component is provided at a portion in contact with the electronic components inside or the pusher of the pusher to be pressed against the socket, it Test equipment. Wherein the first temperature sensor, utilizing the electronic component of the input terminal or protective diode is formed on the output terminal, an electronic device testing apparatus according to claim 1, wherein a. A plurality of the sockets are provided,
The first temperature sensors are distributed in a smaller number than the number of the sockets, or only one is provided,
The temperature applying device is provided only one, heated and / or cooled collectively the plurality of sockets by the one temperature-applying device, that the electronic device testing apparatus according to claim 1, wherein . A plurality of the sockets are provided,
The first temperature sensors are distributed and provided in a smaller number than the number of the sockets,
The temperature application device, at a position corresponding to the first temperature sensor, the first is provided the same number as the temperature sensor, heating and / or cooling the plurality of sockets by temperature application device of the number, The electronic component testing apparatus according to claim 1 . It further comprises a junction temperature detection means for detecting the temperature rise amount of the junction temperature of the electronic component accompanying the power consumption of the electronic component itself,
2. The electron according to claim 1, wherein the temperature in the chamber is controlled based on the temperature increase obtained by the junction temperature detecting means so that the temperature of the electronic component is required during the test. Component testing equipment. A chamber that heats and / or cools an electronic component to a predetermined temperature, and a mechanical and electrical connection to a test head outside the chamber, and is disposed in the chamber and electrically connected to a connection terminal of the electronic component A temperature control method in an electronic component test apparatus equipped with a socket capable of:
As the socket is temperature substantially the same temperature in the chamber, heated and / or cooling the socket,
A temperature control method in an electronic component testing apparatus , comprising detecting a package temperature or a junction temperature of an electronic component and a temperature of the socket, and controlling the temperature of the socket based on the detected temperatures. When the set temperature in the chamber when the electronic component is set to the target set temperature during the test is the set temperature in the chamber,
The chamber set temperature corresponding to a plurality of different set temperatures of the electronic component is obtained in advance, and the chamber is heated and / or cooled based on the set temperature in each chamber obtained above. Item 10. A temperature control method in the electronic component testing apparatus according to Item 9 . Measures the temperature rise of the junction temperature of the electronic component when power is supplied to the electronic component during testing, and controls the temperature in the chamber and / or the temperature of the socket based on the measured temperature rise The temperature control method in the electronic component test apparatus according to claim 9, wherein: Measuring the temperature rise of the junction temperature of the electronic component due to the power consumption of the electronic component itself, to control the temperature in the based on the temperature rise amount of the measured chamber, it claim 9, wherein Temperature control method for electronic component testing apparatus.

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