WO2006093399A1 - Holographic device and method for determination of photoelectric parameters of a semiconductor - Google Patents

Holographic device and method for determination of photoelectric parameters of a semiconductor Download PDF

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Publication number
WO2006093399A1
WO2006093399A1 PCT/LT2006/000001 LT2006000001W WO2006093399A1 WO 2006093399 A1 WO2006093399 A1 WO 2006093399A1 LT 2006000001 W LT2006000001 W LT 2006000001W WO 2006093399 A1 WO2006093399 A1 WO 2006093399A1
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optical
semiconductor
excitation
probe
diffraction
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PCT/LT2006/000001
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French (fr)
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Kestutis Jarasiunas
Markas Sudzius
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Kestutis Jarasiunas
Markas Sudzius
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Publication of WO2006093399A1 publication Critical patent/WO2006093399A1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/0005—Adaptation of holography to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/0005—Adaptation of holography to specific applications
    • G03H2001/0033—Adaptation of holography to specific applications in hologrammetry for measuring or analysing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
    • G03H2001/026—Recording materials or recording processes
    • G03H2001/0268—Inorganic recording material, e.g. photorefractive crystal [PRC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H2222/00—Light sources or light beam properties
    • G03H2222/33—Pulsed light beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H2223/00—Optical components
    • G03H2223/26—Means providing optical delay, e.g. for path length matching

Definitions

  • the invention concerns metrology of materials, in particularly, the tools for determination of the electric parameters of a semiconductor. It can be used for contactless characterization of wide bandgap semiconductor crystals or layered structures.
  • the material parameters determined by these tools can be used for evaluation of its fabrication technology and, thus, for improvement of a material manufacturing process. Role of a various technological factors to the material properties (e.g. doping by deep impurity, co-doping by a shallow donor or acceptor, surface passiveation) or post-growth treatment (thermal annealing, ion implantation, presence of radiation-induced defects) can be evaluated quantitatively by the proposed tools.
  • Manufacturing of semiconductor heterostructures on a different substrate requires the subsequent measurements of the electric parameters of the grown active layer, as carrier lifetime, mobility, diffusion length, recombination rate, electrical activity of the dopants. These parameters are usually measured by using the electric tools, which are the most sensitive but requires the ohmic contacts, or by using the optical ones, which do not require neither mechanical nor electric contact with a material.
  • a prototype for the proposed optical measurement tool for determination of semiconductor electric parameters employs photoexcitation of an object (semiconductor) by using a Fourier Grating technique, in which the spatially modulated excitation channel is formed by illumination of an amplitude- modulating optical mask with a number of fixed periodicity strips, a sequence of white-dark light lines is created on a surface of an investigated object, the said object is monitored by a probe-beam from the another light source, guiding the focused probe-beam to the object along the white or the dark line and measuring the optical absorption of the probe beam along said lines, and the measured difference in absorption is used to evaluate the photoelectric parameters of a material, e.g. carrier lifetime, recombination rate, diffusion coefficient.
  • a material e.g. carrier lifetime, recombination rate, diffusion coefficient.
  • the optical excitation channel contains the first laser as a pulsed radiation source, the optical mask, and the object with its surface oriented perpendicularly with respect to an axis of the optical excitation channel, and the first detector is placed in the partially reflected optical excitation channel, and the said detector is connected to the first input line of a data acquisition system.
  • An optical probe channel of the prototype device contains in series the second infrared laser radiation source, an optical delay line, a focusing system for the probe beam, the investigated object - with its surface oriented along the optical axis of the probe beam, and the second infrared beam photodetector placed in the axis of the probe beam behind the object, and the said photodetector is connected to the second input line of the data acquisition system, while the object under investigation is mechanically attached to micro-positioning devise.
  • the prototype technique has number of drawbacks: (i) it requires a tight focusing of the infrared radiation source to a few micrometer diameter beam and its alignment to the center of the white (or dark) light line on an edge of the sample, which has its input an output edges polished to the optical quality; (ii) the prototype device requires a number of Fourier-masks with different periodicity; (iii) the measurement procedure is time consuming, as it requires a change of the masks with the subsequent precise alignment of the focused probe beam on the new position of the white and dark lines; (iv) the spatial resolution of the prototype is limited by the aperture of the focused probe beam. Therefore, the measurements by using the prototype technique and device are time consuming, complicated, and of limited spatial resolution.
  • the drawbacks of the prototype tool are eliminated by the proposed holographic method for determination of semiconductor (photo)electric parameters, in which the spatially modulated pattern is formed by using an optical mask, which creates two optical excitation channels with identical wave fronts that intersect on the object, record a transient grating in the investigated semiconductor, the probe beam measures the diffraction efficiency of the grating, and the photoelectric parameters of a semiconductor are determined from the diffraction efficiency characteristics of the probe beam.
  • a holographic device for determination of semiconductor photoelectric parameters consists of a pulsed laser source, two optical excitation channels, which are formed by help of a holographic grating, two beam-alignment elements placed into the said excitation channels between the grating and the object, the optical probe channel and additional photodetector for monitoring the diffracted part of the probe beam, and the said photodetector is connected to the data acquisition system.
  • Fig 1 shows a block structure of the holographic device for determination of semiconductor photoelectric parameters with an optical excitation source 1 - a pulsed laser, the optical excitation beam 2, the optical beam-splitter 3, the partially reflected optical excitation beam 4, the diffraction grating 5 as an optical mask, the two optical excitation channels 6 and 7 with identical wave-fronts, the two alignment units 8 and 9, the investigated semiconductor 10, the optical probe channel 11 and probe source 12 - a pulsed laser, the optical delay line 13, the focusing-collimating system 14 of the probe channel, the probe beam 15; the diffracted probe beam 16, the photodetectors 17-19, and the electronic data acquisition unit 20.
  • the device which implements the holographic method for determination of semiconductor photoelectric parameters consists of the pulsed laser source 1 (e.g. a picosecond laser), emitting an optical excitation beam 2 at required wavelength, the optical mask 5 (e.g. a diffraction grating), with forms two first order diffraction beams 6 and 7, which are further used as the optical excitation channels 6 and 7, two alignment units 8 and 9 (e.g. mirrors or optical lens), which are inserted into the optical channels 6 and 7 in order to direct them onto the investigated semiconductor 10.
  • the beamsplitter 3 e.g. glass plate
  • the optical probe channel 11 consists of positioned in series the pulsed laser source 12, the optical delay line 13 (e.g. a retro-reflecting prism on electromechanically driven translation stage), the focusing-collimating system 14 of the probe beam (e.g. one or two optical lenses), the investigated semiconductor 10 and the second photo-detector 18, positioned behind the sample on the probe beam optical axis.
  • the third photodetector 19 is positioned in the direction of propagation of the first diffraction order 14 of the probe beam 15. All three photo-detectors are connected to the inputs of the data acquisition system 20, which digitises the electric signals from each detector and records the data into the PC memory.
  • the method and device for determination of semiconductor photoelectric parameters operate in the following way. Radiation of the pulsed laser 1 serves as the optical excitation beam 2. It propagates through the diffraction grating 5 and is diffracted by the latter, forming the zero and two first order diffraction beams 6 and 7 behind the grating. The diffracted beams are directed by mirrors 8 and 9 towards the investigated semiconductor 10 (e.g. layer of GaN crystal) and overlap on its surface. In this way, interference field generates the spatially modulated free carrier pattern in the material, which causes the corresponding changes of optical properties of a semiconductor in the illuminated areas and, thus, create a transient diffraction grating in the semiconductor.
  • the investigated semiconductor 10 e.g. layer of GaN crystal
  • Radiation from the laser source 12 serves as the optical probe channel 11 , it passes through the prism in the optical delay line 13, the focusing-collimating system 14 of the probe beam, passes through the investigated semiconductor 10 and is diffracted by the free-carrier diffraction grating, thus creating the diffracted beam channel 16.
  • Photodetectors 17, 18, and 19 measure the energies of beams in the excitation channel 2, probe beam channel 11 , and diffracted beam channel 16. The measured data are recorder by acquisition system 20, and the probe beam diffraction efficiency on the grating is calculated.
  • the characteristics of probe beam diffraction efficiency ⁇ are measured by varying a selected parameter, e.g.: the temporal characteristic is measured by varying the probe beam delay time ⁇ t, the exposure characteristic is measured by varying energy in excitation channel 2, and so on.
  • ⁇ tw are selected and the corresponding values of ⁇ -i, r ⁇ 2 , ⁇ 3 > ⁇ •-, ⁇ N are measured.
  • ⁇ G the grating decay time
  • the similar measurement procedure is repeated at new grating period, which is obtained by e.g. moving the two alignment units 8 and 9 to a new position, or by replacing the grating with another one with different period.
  • set of values of TGI, ⁇ c2, ⁇ G3, • ⁇ . TGN are obtained for the selected grating periods Li, L 2 , L 3 , ..., LN .
  • the photoelectrical parameter e.g. carrier lietime, diffusion coefficient, mobility, nonequilibroum carrier concentration, etc.
  • the present tool for determination of semiconductor photoelectric parameters is more simple and versatile, as can be based on refractive and /or absorptive index modulation of a semiconductor, does not require polishing of semiconductor edges, has higher spatial resolution, is nondestructive, and allows determination of a semiconductor parameters in the selected area of a wafer (i.e. monitoring of semiconductor parameters across a wafer).

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

The invention is intended for measurement of a semiconductor photoelectric properties by optical means and, thus, can be used for contactless characterization of semiconductor crystals, structures, or evaluation of their fabrication technology. A holographic method for determination of photoelectric parameters of a semiconductor uses for optical excitation two beams with identical wave fronts that are created by an optical mask, monitors the light-induced spatially-modulated structure within the investigated semiconductor by optical probe pulse, measures the diffraction characteristics of the probe beam which diffracts on the structure, and determines the photoelectric parameters of a semiconductor from the diffraction characteristics. A holographic device for determination of photoelectric parameters of a semiconductor employs a diffraction grating and beam-aligning elements positioned in the optical excitation channels, variable delay line for the probe beam, and set of detectors to monitor characteristics of probe beam diffraction efficiency on the spatially modulated structure.

Description

HOLOGRAPHIC DEVICE AND METHOD FOR DETERMINATION OF
PHOTOELECTRIC PARAMETERS OF A SEMICONDUCTOR
The invention concerns metrology of materials, in particularly, the tools for determination of the electric parameters of a semiconductor. It can be used for contactless characterization of wide bandgap semiconductor crystals or layered structures. The material parameters determined by these tools can be used for evaluation of its fabrication technology and, thus, for improvement of a material manufacturing process. Role of a various technological factors to the material properties (e.g. doping by deep impurity, co-doping by a shallow donor or acceptor, surface passiveation) or post-growth treatment (thermal annealing, ion implantation, presence of radiation-induced defects) can be evaluated quantitatively by the proposed tools.
Manufacturing of semiconductor heterostructures on a different substrate requires the subsequent measurements of the electric parameters of the grown active layer, as carrier lifetime, mobility, diffusion length, recombination rate, electrical activity of the dopants. These parameters are usually measured by using the electric tools, which are the most sensitive but requires the ohmic contacts, or by using the optical ones, which do not require neither mechanical nor electric contact with a material.
A prototype for the proposed optical measurement tool for determination of semiconductor electric parameters employs photoexcitation of an object (semiconductor) by using a Fourier Grating technique, in which the spatially modulated excitation channel is formed by illumination of an amplitude- modulating optical mask with a number of fixed periodicity strips, a sequence of white-dark light lines is created on a surface of an investigated object, the said object is monitored by a probe-beam from the another light source, guiding the focused probe-beam to the object along the white or the dark line and measuring the optical absorption of the probe beam along said lines, and the measured difference in absorption is used to evaluate the photoelectric parameters of a material, e.g. carrier lifetime, recombination rate, diffusion coefficient.
A prototype device which realizes the optical Fourier grating technique uses the optical excitation and optical probing channel. The optical excitation channel contains the first laser as a pulsed radiation source, the optical mask, and the object with its surface oriented perpendicularly with respect to an axis of the optical excitation channel, and the first detector is placed in the partially reflected optical excitation channel, and the said detector is connected to the first input line of a data acquisition system. An optical probe channel of the prototype device contains in series the second infrared laser radiation source, an optical delay line, a focusing system for the probe beam, the investigated object - with its surface oriented along the optical axis of the probe beam, and the second infrared beam photodetector placed in the axis of the probe beam behind the object, and the said photodetector is connected to the second input line of the data acquisition system, while the object under investigation is mechanically attached to micro-positioning devise. (P.Grivickas, J.Linnros, V.Grivickas: "Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence", Materials Science Forum, vols 338- 342, pp.671-674, 2000, Trans Tech Publications, Switzerland).
The prototype technique has number of drawbacks: (i) it requires a tight focusing of the infrared radiation source to a few micrometer diameter beam and its alignment to the center of the white (or dark) light line on an edge of the sample, which has its input an output edges polished to the optical quality; (ii) the prototype device requires a number of Fourier-masks with different periodicity; (iii) the measurement procedure is time consuming, as it requires a change of the masks with the subsequent precise alignment of the focused probe beam on the new position of the white and dark lines; (iv) the spatial resolution of the prototype is limited by the aperture of the focused probe beam. Therefore, the measurements by using the prototype technique and device are time consuming, complicated, and of limited spatial resolution.
In accordance with the invention, the drawbacks of the prototype tool are eliminated by the proposed holographic method for determination of semiconductor (photo)electric parameters, in which the spatially modulated pattern is formed by using an optical mask, which creates two optical excitation channels with identical wave fronts that intersect on the object, record a transient grating in the investigated semiconductor, the probe beam measures the diffraction efficiency of the grating, and the photoelectric parameters of a semiconductor are determined from the diffraction efficiency characteristics of the probe beam. A holographic device for determination of semiconductor photoelectric parameters consists of a pulsed laser source, two optical excitation channels, which are formed by help of a holographic grating, two beam-alignment elements placed into the said excitation channels between the grating and the object, the optical probe channel and additional photodetector for monitoring the diffracted part of the probe beam, and the said photodetector is connected to the data acquisition system.
Fig 1 shows a block structure of the holographic device for determination of semiconductor photoelectric parameters with an optical excitation source 1 - a pulsed laser, the optical excitation beam 2, the optical beam-splitter 3, the partially reflected optical excitation beam 4, the diffraction grating 5 as an optical mask, the two optical excitation channels 6 and 7 with identical wave-fronts, the two alignment units 8 and 9, the investigated semiconductor 10, the optical probe channel 11 and probe source 12 - a pulsed laser, the optical delay line 13, the focusing-collimating system 14 of the probe channel, the probe beam 15; the diffracted probe beam 16, the photodetectors 17-19, and the electronic data acquisition unit 20.
The device which implements the holographic method for determination of semiconductor photoelectric parameters consists of the pulsed laser source 1 (e.g. a picosecond laser), emitting an optical excitation beam 2 at required wavelength, the optical mask 5 (e.g. a diffraction grating), with forms two first order diffraction beams 6 and 7, which are further used as the optical excitation channels 6 and 7, two alignment units 8 and 9 (e.g. mirrors or optical lens), which are inserted into the optical channels 6 and 7 in order to direct them onto the investigated semiconductor 10. The beamsplitter 3 (e.g. glass plate) reflects a part 4 of the optical excitation beam 2 to photo-detector 17, which controls energy of the excitation beam. The optical probe channel 11 consists of positioned in series the pulsed laser source 12, the optical delay line 13 (e.g. a retro-reflecting prism on electromechanically driven translation stage), the focusing-collimating system 14 of the probe beam (e.g. one or two optical lenses), the investigated semiconductor 10 and the second photo-detector 18, positioned behind the sample on the probe beam optical axis. The third photodetector 19 is positioned in the direction of propagation of the first diffraction order 14 of the probe beam 15. All three photo-detectors are connected to the inputs of the data acquisition system 20, which digitises the electric signals from each detector and records the data into the PC memory.
The method and device for determination of semiconductor photoelectric parameters operate in the following way. Radiation of the pulsed laser 1 serves as the optical excitation beam 2. It propagates through the diffraction grating 5 and is diffracted by the latter, forming the zero and two first order diffraction beams 6 and 7 behind the grating. The diffracted beams are directed by mirrors 8 and 9 towards the investigated semiconductor 10 (e.g. layer of GaN crystal) and overlap on its surface. In this way, interference field generates the spatially modulated free carrier pattern in the material, which causes the corresponding changes of optical properties of a semiconductor in the illuminated areas and, thus, create a transient diffraction grating in the semiconductor. Radiation from the laser source 12 serves as the optical probe channel 11 , it passes through the prism in the optical delay line 13, the focusing-collimating system 14 of the probe beam, passes through the investigated semiconductor 10 and is diffracted by the free-carrier diffraction grating, thus creating the diffracted beam channel 16. Photodetectors 17, 18, and 19 measure the energies of beams in the excitation channel 2, probe beam channel 11 , and diffracted beam channel 16. The measured data are recorder by acquisition system 20, and the probe beam diffraction efficiency on the grating is calculated.
The characteristics of probe beam diffraction efficiency η are measured by varying a selected parameter, e.g.: the temporal characteristic is measured by varying the probe beam delay time Δt, the exposure characteristic is measured by varying energy in excitation channel 2, and so on. Procedure for the temporal characteristic measurement is the following: the probe beam path length to the semiconductor 10 is chosen equal to the path length of the excitation beams 6 and 7, and this corresponds to the probe beam delay time Δt equal to zero. At this condition, the diffraction efficiency value η=η(0) is measured. By moving the prism in the optical delay line 13, the different delay time values Δti, Δt2, Δtβ
Δtw are selected and the corresponding values of η-i, r\2, η3> ■ •-, ηN are measured. By plotting the dependence of η=f (Δt), the temporal characteristic of diffraction is measured, and the grating decay time τG is determined. The similar measurement procedure is repeated at new grating period, which is obtained by e.g. moving the two alignment units 8 and 9 to a new position, or by replacing the grating with another one with different period. In this way, set of values of TGI, τc2, τG3, •■. TGN are obtained for the selected grating periods Li, L2, L3, ..., LN . Using the relationship between the measured optical parameter TG and the photoelectrical parameter (e.g. carrier lietime, diffusion coefficient, mobility, nonequilibroum carrier concentration, etc.), the photoelectrical parameters of the semiconductor 10 are determined.
The present tool for determination of semiconductor photoelectric parameters is more simple and versatile, as can be based on refractive and /or absorptive index modulation of a semiconductor, does not require polishing of semiconductor edges, has higher spatial resolution, is nondestructive, and allows determination of a semiconductor parameters in the selected area of a wafer (i.e. monitoring of semiconductor parameters across a wafer).

Claims

Claims
1. A holographic device for determination of photoelectric parameters of a semiconductor, having the optical excitation beam (2) and the optical mask (5) positioned in the optical excitation beam, the optical probe channel (11 ), and detectors (17, 18) for control of the excitation beam and the probe beam energy, characterized in that the optical mask 5 is made as a diffraction grating, which forms two optical excitation channels (6 and 7), and said excitation channels are directed by the aligning elements (8 and 9), positioned in the optical channels (6 and 7) onto the investigated semiconductor (10), and the said semiconductor is probed by the beam of the optical probe channel 11 , which passes the optical delay line (13) and is diffracted by the light-induced spatially modulated structure within the semiconductor (10), and the probe beam first diffraction order (14) energy is registered by a detector (19)
2. A holographic method for determination of photoelectric parameters of a semiconductor, based on the optical excitation of a semiconductor by a beam which passes through the optical mask, subsequent spatial modulation of optical properties of the material, and monitoring the changes by a probe beam, characterized in that the semiconductor is optically illuminated by two excitation beams having identical wave fronts, said beams are produced by light diffraction on the optical mask, said beams induce a spatially modulated structure in the semiconductor (10), the diffraction efficiency of the said structure is monitored by a pulse of the optical probe beam with variable delay time, and the diffraction characteristics of the probe beam are used to determine the photoelectric parameters of a semiconductor.
PCT/LT2006/000001 2005-03-01 2006-01-13 Holographic device and method for determination of photoelectric parameters of a semiconductor WO2006093399A1 (en)

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LT2005020 2005-03-01

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU494063A1 (en) * 1974-05-08 1978-01-05 Вильнюсский Ордена Трудового Красного Знамени Государственный Университет Им.В.Капсукаса Method of determining the photoelectric characteristics of a semiconductor
JPH03230543A (en) * 1990-02-06 1991-10-14 Fujitsu Ltd Inspecting method of semiconductor device
SU1545866A1 (en) * 1988-01-13 1995-08-27 Физико-технический институт им.А.Ф.Иоффе Method for determining photoelectric parameters of noncompensated impurity semiconductors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU494063A1 (en) * 1974-05-08 1978-01-05 Вильнюсский Ордена Трудового Красного Знамени Государственный Университет Им.В.Капсукаса Method of determining the photoelectric characteristics of a semiconductor
SU1545866A1 (en) * 1988-01-13 1995-08-27 Физико-технический институт им.А.Ф.Иоффе Method for determining photoelectric parameters of noncompensated impurity semiconductors
JPH03230543A (en) * 1990-02-06 1991-10-14 Fujitsu Ltd Inspecting method of semiconductor device

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