JP2007043019A - Semiconductor evaluation apparatus and semiconductor processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the semiconductor evaluation apparatus that can evaluate substrates with a high sensitivity. <P>SOLUTION: The apparatus includes a probe laser Pb that radiates a first probe light moving towards a semiconductor substrate. A first half mirror Mh2 gets a second probe light forming a part of the first probe light from the first probe light. An optical power meter and detector D loads both a first reflection probe light due to the reflection of the first probe light by the semiconductor substrate, and a second reflection probe light due to the reflection of the second probe light by the first reference sample having an internal state for reference, into the same optical axis. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor evaluation apparatus and a semiconductor processing apparatus. For example, the present invention relates to an impurity introduction process and an evaluation during an annealing process in manufacturing a semiconductor device.

  A series of manufacturing processes for forming an integrated circuit on a semiconductor wafer usually includes an ion implantation process for implanting charged atoms or molecules into the semiconductor wafer. Along with the ion implantation, the implanted ions collide with the crystal lattice in the semiconductor wafer, and point defects such as interstitial atoms and atomic vacancies are generated in the semiconductor wafer. A method for measuring the dose of implanted ions using this phenomenon is known.

  As one of the measuring methods, a method using light such as a thermal wave method is used. The thermal wave method evaluates the state of the semiconductor wafer by irradiating the semiconductor wafer with light and analyzing the light reflected by the semiconductor wafer. Since the reflected light also reflects a delicate structure in the semiconductor, it is possible to detect defects and the like formed in the semiconductor. At the time of this evaluation, in order to improve accuracy, a method such as applying intensity modulation to the incident light and removing the change in the signal light due to the disturbance is adopted. In addition, incident light is extracted by a half mirror to correct the modulation of the light source.

  However, at present, since the signal obtained from the reflected light is very small, it is difficult to evaluate a delicate state such as an ion implantation angle.

  Evaluation was made by measuring the photothermal displacement (Pa value) of the sample in advance by the thermal wave method, the defect density and the total peripheral length, determining the relationship between them, and comparing it with the Pa value of the sample to be evaluated. A technique for obtaining the defect density and total peripheral length of a sample is known (for example, Patent Document 1).

Prior art document information related to the invention of this application includes the following.
Japanese Patent No. 3,290,352

  The present invention intends to provide a semiconductor evaluation apparatus and a semiconductor processing apparatus capable of evaluating a substrate with high sensitivity.

  A semiconductor evaluation apparatus according to a first aspect of the present invention includes a probe laser that irradiates a first probe light that travels toward a semiconductor substrate, and a second probe light that is a part of the first probe light. A first half mirror to be taken out from a first reference probe light obtained by reflecting the first probe light by the semiconductor substrate, and a first reference sample in which the second probe light has a reference internal state. A light measuring instrument that captures the second reflected probe light obtained by being reflected on the same optical axis.

  According to a second aspect of the present invention, there is provided a semiconductor processing apparatus comprising: a probe laser that irradiates a first probe light that travels toward a semiconductor substrate; and a second probe light that is a part of the first probe light. A first half mirror to be taken out from a first reference probe light obtained by reflecting the first probe light by the semiconductor substrate, and a first reference sample in which the second probe light has a reference internal state. A light measuring instrument that takes in the second reflection probe light obtained by being reflected on the same optical axis, and an ion irradiation unit that irradiates the semiconductor substrate with an ion beam.

  A semiconductor evaluation apparatus according to a third aspect of the present invention is a semiconductor evaluation apparatus that evaluates a semiconductor substrate disposed in a semiconductor processing apparatus, and that emits a first probe light that travels toward the semiconductor substrate. And a first half mirror that extracts a part of the first probe light from the first probe light, and the first probe light is transmitted through the first probe light by the semiconductor evaluation device. An optical output unit that transmits the light to the outside, and the first reflected probe light obtained by reflecting the first probe light on the semiconductor substrate is transmitted into the semiconductor evaluation apparatus. The light input unit to be captured, the first reflected probe light, and the second probe light are reflected by a first reference sample having an internal state for reference. Characterized by comprising a second reflected probe light is, a light meter to take the same optical axis, a.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor evaluation apparatus and semiconductor processing apparatus which can evaluate a board | substrate with high sensitivity can be provided.

  Embodiments of the present invention will be described below with reference to the drawings. In the following description, components having substantially the same function and configuration are denoted by the same reference numerals, and redundant description will be given only when necessary.

(First embodiment)
FIG. 1 is a diagram schematically showing a main part of the semiconductor evaluation apparatus according to the first embodiment of the present invention. As shown in FIG. 1, the semiconductor evaluation apparatus includes a first pump laser Pm1, a second pump laser Pm2, a probe laser Pb, half mirrors (reflection members) Mh1 to Mh6, mirrors (reflection members) M1, filters F1 to F3, It has a light measuring device D and the like.

  The substrate S made of silicon is a target to be evaluated by the semiconductor evaluation apparatus according to the present embodiment. The reference sample R is previously ion-implanted under predetermined conditions, and an impurity region having a desired impurity concentration and concentration profile is formed.

  The first pump laser Pm1 is provided above the substrate S and generates the first pump light Lm1. The first pump light Lm1 is, for example, laser light having a wavelength of 830 nm, and is irradiated toward the substrate S. The first pump light Lm1 has a characteristic in which a modulation component that changes with time in a constant cycle is superimposed on a constant DC component regardless of time. The first pump light Lm1 has a function of generating excess carriers in the substrate S.

  The second pump laser Pm2 is provided above the reference sample R and generates the second pump light Lm2. The second pump light Lm2 is irradiated toward the reference sample R, and has the same or different characteristics as the first pump light Lm1 depending on the evaluation method, as will be described later. The second pump light Lm2 has a function of generating excess carriers in the reference sample R.

  The probe laser Pb is provided above the substrate S and generates the probe light Lb toward the first pump light Lm1. The probe light has a constant intensity regardless of time, and is, for example, a laser light having a wavelength of 980 nm.

  The half mirror Mh1 is provided at a position where the first pump light Lm1 and the probe light Lb intersect. The half mirror Mh1 transmits the first pump light Lm1 and reflects the probe light Lb to guide it onto the optical axis of the first pump light.

  The half mirror Mh2 is provided on the optical axis of the first pump light Lm1. The half mirror Mh2 transmits each part of the first pump light Lm1 and the probe light Lb and reflects the remaining part. The first pump light Lm1 and the probe light Lb reflected by the half mirror Mh2 travel toward the optical axis of the second pump light Lm2.

  A half mirror Mh3 is provided between the half mirror Mh2 and the substrate S on the optical axis of the first pump light Lm1. The half mirror Mh3 transmits the first pump light Lm1 and the probe light Lb that have passed through the half mirror Mh2. The first pump light Lm1 and the probe light Lb transmitted through the half mirror Mh3 are reflected by the substrate S. The first pump light Lm1 reflected by the substrate S and the probe light reflected by the substrate (hereinafter referred to as the first reflected probe light Lbr1) are reflected by the half mirror Mh3.

  The filter F1 faces the half mirror Mh3 and is provided on the optical axis of the first pump light Lm1 and the first reflection probe light Lbr1 reflected by the half mirror Mh3. The filter F1 absorbs the pump light Lm1 and transmits the first reflection probe light Lbr1.

  The half mirror Mh4 is provided on an extension line connecting the half mirror Mh3 and the filter F1. The first reflected probe light Lbr1 that has passed through the filter F1 passes through the half mirror Mh4.

  The filter F2 is provided between the half mirror Mh2 and the optical axis of the second pump light Lm2, absorbs the first pump light Lm1 reflected by the half mirror Mh2, and reflects the probe light Lb reflected by the first half mirror. Permeate.

  The half mirror Mh5 is provided at a position facing the half mirror Mh2 on the optical axis of the second pump. The half mirror Mh5 transmits the second pump light Lm2, reflects the probe light Lb transmitted through the filter F2, and guides it on the optical axis of the second pump light Lm2.

  A half mirror Mh6 is provided between the half mirror Mh5 and the reference sample R on the optical axis of the second pump light Lm2. The half mirror Mh6 transmits the second pump light Lm2 and the probe light Lb. The second pump light Lm2 and the probe light Lb transmitted through the half mirror Mh6 are reflected by the reference sample R. The second pump light Lm2 reflected by the reference sample R and the probe light Lb reflected by the reference sample R (hereinafter referred to as second reflection probe light Lbr2) are reflected by the half mirror Mh6. The half mirror Mh6 is movable along the vertical direction (the direction connecting the second pump laser Pm2 and the reference sample R).

  The filter F3 is provided at a position facing the half mirror Mh6, absorbs the second pump light Lm2 reflected by the half mirror Mh6, and transmits the second reflected probe light Lbr2 reflected by the half mirror Mh6.

  The mirror M1 is provided at a position facing the half mirror Mh6 on the extended line connecting the half mirror Mh6 and the filter F3. The mirror M1 reflects the second reflection probe light Lbr2 that has passed through the filter F3. The mirror M1 is movable along the vertical direction (the direction connecting the first pump laser Lm1 and the substrate S).

  The half mirror Mh3 reflects the second reflected probe light Lbr2 reflected by the mirror M1 and guides it on the optical axis of the first reflected probe light Lbr1 transmitted through the filter F1.

  The combined light of the first reflection probe light Lbr1 and the second reflection probe light Lbr2 enters the optical measuring device D. The light measuring device D is realized by a device that detects the intensity of light in an analog manner, such as a photodetector. The optical measuring device D converts the incident light into an electric signal Sg and outputs it. The electrical signal Sg is supplied to the computer C as necessary, and the computer C performs a predetermined process using the electrical signal Sg.

  By making the photon energy of the first pump light Lm1 larger than the band gap energy of silicon, the first pump light Lm1 absorbed by the substrate S is an excess carrier consisting of a pair of electrons and holes in the substrate S. (Hereinafter referred to as an optical carrier) is excited.

  The time until the photocarrier disappears (lifetime) depends on the crystallinity of the substrate S. For example, the crystallinity is poor in a region where the crystal structure is damaged or modified by ion implantation. Therefore, in a region where crystallinity is poor, the lifetime is relatively short, and the amount of valence electrons is small because excess carriers immediately recombine. If a large amount of impurities are implanted, the crystallinity also deteriorates accordingly, and the impurity concentration and the amount of valence electrons are related to each other. For the same reason, the impurity concentration profile and the distribution of the amount of valence electrons are also related to each other.

  In the region where the annealing process is performed after the ion implantation, the crystal structure changed by the ion implantation is recovered. In a region where the crystallinity is good, the lifetime is relatively long and the density of excess carriers is high. That is, the amount of charged electrons is large.

  The reflectivity of a material varies with the amount of valence electrons in the material. Therefore, by irradiating a certain substance with pump light and evaluating the intensity of the reflected light of the probe light irradiated to the substance at this time, the amount of valence electrons in the substance, that is, the crystallinity can be evaluated. Then, by associating each crystal state with the impurity state in advance, it is possible to evaluate the impurity concentration, profile, and substrate state after annealing by evaluating crystallinity.

  However, the change in the intensity of the reflected light observed in this way is very small. Therefore, an alternating current component that changes over time is added to a temporally constant direct current component of the intensity of pump light for generating excess carriers. Then, the generation of excess carriers changes with time. As a result, the intensity of the reflected probe light also changes with the same period as the modulation period of the pump light.

  The first pump light Lm1 reaches the substrate S, where it excites optical carriers.

  Similarly, in the second pump light Lm2, an AC component is superimposed on a DC component. The second pump light Lm2 reaches the reference sample, where it excites optical carriers.

  The probe light Lb irradiated by the probe laser is branched into two by the half mirror Mh2, and each takes different optical paths as shown below. That is, one probe light Lb passes through the half mirror Mh3 and is reflected by the substrate S. The probe light Lbr reflected by the substrate S, that is, the first reflected probe light Lbr1 includes information on the impurity concentration, impurity concentration profile, and the like (hereinafter, internal state) of the substrate S. This internal state information is expressed by the intensity of the first reflective probe light Lbr1 according to the crystal state of the substrate S. Then, the first reflected probe light Lbr1 is reflected by the half mirror Mh3, passes through the half mirror Mh4, and reaches the optical measuring device D.

  The other of the branched probe lights Lb is reflected by the half mirror Mh5, passes through the half mirror Mh6, and is reflected by the reference sample R. The probe light Lbr reflected by the reference sample R, that is, the second reflected probe light Lbr2 includes information on the internal state of the reference sample R. The information on the internal state is expressed by the intensity according to the crystal state of the reference sample R that the second reflective probe light Lbr2 has. Then, the second reflected probe light Lbr2 is sequentially reflected by the half mirror Mh6, the mirror M1, and the half mirror Mh4, and enters the optical measuring device D on the same optical axis as the first reflected probe light Lbr1.

  As described above, the first reflection probe Lbr1 light and the second reflection probe light Lbr2 are incident on the optical measuring device D on the same optical axis. Here, as shown in FIGS. 2A and 2B, it is assumed that the modulation frequencies with respect to time of the first pump light Lm1 and the second pump light Lm2 are the same. In this case, if the internal state of the substrate S is the same as the internal state of the reference sample R, the first reflective probe light Lbr1 and the second reflective probe light Lbr2 have the same intensity and the same frequency with respect to time. Therefore, the optical path of the light incident on the optical measuring device D as the first reflected probe light Lbr1 from the probe laser Pb (the optical path of the first reflected probe light Lbr1), and the optical measuring device as the second reflected probe light Lbr2 from the probe laser Pb When the difference between the optical path of light incident on D (the optical path of the second reflected probe light Lbr2) is an integral multiple of the wavelength of the probe light Lb, the two lights strengthen each other. Therefore, as shown in FIG. 2C, the combined light of the first reflected probe light Lbr1 and the second reflected probe light Lbr2 (hereinafter referred to as measured combined light) incident on the optical measuring device D has a frequency of the probe light. The intensity amplitude is twice that of the probe light.

  Further, when the optical path difference between the first reflected probe light Lbr1 and the second reflected probe light Lbr2 is an integral multiple +1/2 of the wavelength of the probe light Lb, the phases when the two lights reach the optical measuring device D are shifted. So the two lights cancel each other out. Therefore, as shown in FIG. 3, the measurement combined light incident on the optical measuring device D has zero intensity and zero frequency (extinction level). The optical path difference at this time is referred to as a reference optical path difference. The optical path of the second reflection probe light Lbr2 can be arbitrarily changed by vertically moving the half mirror Mh6 and the mirror M1 by the same amount.

  On the other hand, if the internal state of the substrate S is different from the internal state of the reference sample R, the second reflective probe light Lbr2 has a different intensity from the first reflective probe light Lbr1. For this reason, even if the optical path difference between the two reflected probe lights is the reference optical path difference, the measurement combined light is not minimum. The optical path difference between the two reflected probe lights is changed by moving the half mirror Mh6 and the mirror M1 so that the intensity of the measurement combined light is minimized. Then, the difference between the optical path difference (measurement optical path difference) when the intensity of the measured combined light is minimum and the reference optical path difference is obtained. Taking the case of two identical measurement optical path differences shown in FIG. 4 as an example, the optical path difference when the solid line optical path difference has the minimum intensity is obtained. The optical path difference of the first reflected probe light Lbr1 is adjusted so that a solid line waveform is obtained from the broken line waveform.

  When a difference in optical path difference is observed, it can be determined that the internal state of the substrate S is different from the internal state of the reference sample R, that is, the substrate S does not have a desired internal state. Further, the difference in the optical path difference changes according to the state of the substrate S. Therefore, by measuring the difference between the reference optical path difference and the measurement optical path difference, the degree of deviation of the internal state of the substrate S from the desired state can be obtained.

  In the present embodiment, since the first pump light Lm1 source and the second pump light Lm2 source are provided independently, the phases of the two pump lights can be adjusted. By adjusting the phase, it is possible to obtain the same result as when an optical path difference is generated between two probe lights having the same phase as the pump light.

  Next, a case where the modulation frequencies of the first pump light Lm1 and the second pump light Lm2 are different will be described. As shown in FIGS. 5A and 5B, when the modulation frequencies of the first pump light Lm1 and the second pump light Lm2 are different, the modulation of the first reflection probe light Lbr1 and the second reflection probe light Lbr2 is performed. The frequency is also different. For this reason, as shown in FIG. 5 (c), in the optical measuring device D, the measurement combined light having a wave with respect to the time axis is observed. If this undulation is expressed by a graph of its intensity and time, information on the frequency and phase of the undulation can be obtained. Using this information, the difference from the desired state of the substrate S can be detected. In this case, undulation is generated by appropriately adjusting the intensities of the first pump light Lm1 and the second pump light Lm2. This is because no swell is observed if the intensity of the two pump lights is too different.

  First, as the substrate S, one having a desired state or the same one as the reference sample R is prepared. Information on the frequency and phase of swell when this substrate S is used is prepared in advance. Information at this time is referred to as reference information.

  Next, waviness frequency and phase information (referred to as evaluation information) is obtained using the substrate to be actually evaluated. Then, it is determined whether or not the evaluation information is within a predetermined range set in advance from the reference information. If it is within this range, the substrate is determined as “good”.

  According to the semiconductor evaluation apparatus according to the first embodiment of the present invention, the interference of the combined light of the first reflection probe light Lbr1 reflected by the substrate S and the second reflection probe light Lbr2 close to the first reflection probe light Lbr1. Is used to evaluate the substrate S. For this reason, the internal state of the substrate S can be evaluated with higher sensitivity than when the probe light converted into the electric signal is compared with a certain reference electric signal.

(Second Embodiment)
In the second embodiment, a mechanism for adjusting the optical path of the second reflection probe light Lbr2 is different from that in the first embodiment.

  FIG. 6 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the second embodiment of the present invention. As shown in FIG. 6, a mirror M2 is provided between the half mirror Mh6 and the mirror M1. A mirror M3 is provided at a position facing the mirror M2, a mirror M4 is provided at a position facing the mirror M3, and a mirror M5 is provided at a position facing the mirror M4.

  The mirrors M2 to M5 are arranged so that the second reflected probe light Lbr2 reflected by the half mirror Mh6 is sequentially reflected by the mirror M2, the mirror M3, the mirror M4, and the mirror M5 toward the mirror M1.

  The mirror M3 and the mirror M4 are configured to be movable in the same direction, the same amount, and collectively in a vertical direction by a certain operation. Therefore, the optical path of the second reflection probe light Lbr2 can be adjusted by moving the mirror M3 and the mirror M4 up and down by appropriate amounts.

  Note that the positions of the mirrors M2 to M5 are not limited to those shown in FIG. 6, and any position that can adjust the optical path of the second reflective probe light Lbr2, that is, the optical path of the second reflective probe light Lbr2 is provided. Good.

  The optical path of the second reflected probe light Lbr2 is adjusted by moving the mirror M3 and the mirror M4. Other configurations and the evaluation method of the substrate S are the same as those in the first embodiment.

  According to the semiconductor evaluation apparatus according to the second embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, according to the second embodiment, the optical path of the second reflected probe light Lbr2 can be adjusted by the mirror M3 and the mirror M4 that are configured to be movable in the same direction, the same amount, and collectively. For this reason, it becomes easy to adjust the optical path of the second reflection probe light Lbr2.

(Third embodiment)
In the third embodiment, the optical path of the first reflection probe light Lbr1 is adjusted by using an optical element.

  FIG. 7 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the third embodiment of the present invention. As shown in FIG. 7, an optical element OD is provided between the half mirror Mh6 and the mirror M1. The second reflected probe light Lbr2 reflected by the half mirror Mh6 passes through the optical element OD and reaches the mirror M1.

  The optical element OD can arbitrarily adjust the optical path of the light passing through the optical element OD within the range of one wavelength or more of the light. Alternatively, the same result can be obtained by adjusting the phase of incident light and outgoing light. As such an optical element OD, an element that changes the refractive index of light passing through the optical element due to an electro-optic effect, an electro-magnetic effect, or a piezoelectric effect, or a thickness corresponding to an overlap of two or more superimposed optical crystals A device that changes the optical path by adjusting the height can be used. More specifically, a Babinet Soleil compensation plate or the like can be used.

  Note that the position of the optical element OD is not limited to that shown in FIG. 7, and it is sufficient that the optical element OD is disposed on the optical path of the second reflection probe light Lbr2.

  The optical path of the second reflection probe light Lbr2 is adjusted by using the optical element OD. Other configurations and the evaluation method of the substrate S are the same as those in the first embodiment.

  According to the semiconductor evaluation apparatus according to the third embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, according to the third embodiment, the optical path of the second reflection probe light Lbr2 is adjusted using the optical element OD. For this reason, it is easier to adjust the device configuration and the optical path than when the mirror is physically moved.

(Fourth embodiment)
In the fourth embodiment, the reference sample R is irradiated with the same pump light with which the substrate S is irradiated.

  FIG. 8 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the fourth embodiment of the present invention. As shown in FIG. 8, in the semiconductor evaluation apparatus according to the fourth embodiment, the filter F2 and the second pump laser Pm2 are removed from the semiconductor evaluation apparatus according to the first embodiment (FIG. 1), and the half mirror 5 is a mirror. It has a configuration replaced by M6. Therefore, a part of the first pump light Lm1 branched by the half mirror Mh2 is reflected by the mirror M6, passes through the half mirror Mh6, and reaches the reference sample R. Then, after being reflected by the reference sample R and the half mirror Mh6, it is absorbed by the filter F3.

  Optical carriers are excited in the reference sample R by the first pump Lm1 light. Other configurations and the evaluation method of the substrate S are the same as those in the first embodiment.

  According to the fourth embodiment, similarly to the first embodiment, the interference of the combined light of the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light Lbr2 close to the first reflected probe light Lbr1 is detected. The substrate S is evaluated. For this reason, the same effect as the first embodiment can be obtained.

  In the fourth embodiment, since the same pump laser is irradiated to the substrate S and the reference sample R, unlike the first embodiment, the intensity of the pump light irradiated to the substrate S and the reference sample R, the modulation frequency. Cannot be set individually. However, since only one pump laser is required, there is an advantage that the apparatus configuration is simpler than that of the first embodiment.

  Further, the fourth embodiment can be combined with the second and third embodiments.

(Fifth embodiment)
In the fifth embodiment, the second probe light is changed by using the light for controlling the reference sample R.

  FIG. 9 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the fifth embodiment of the present invention. As shown in FIG. 9, the semiconductor evaluation apparatus according to the fifth embodiment has a light source CL for controlling the reference sample R in addition to the configuration of the first embodiment (FIG. 1).

  The control light source CL emits light Lc that increases the temperature of the reference sample R irradiated with the light Lc. More specifically, an electromagnetic wave such as visible light or infrared light can be used as the light source. The control light source CL is arranged at a position where the reference sample R can be irradiated with the light Lc and shifted from the optical axes of the second pump light Lm2 and the probe light Lb.

  By irradiating the reference sample R with the light Lc, the state of impurities in the reference sample R changes. More specifically, the shape of the impurity diffusion region changes due to the diffusion of impurities, and photocarriers are easily generated. For this reason, the second reflection probe light Lbr2 measured by the optical measuring device D is different from that in the case where no light is irradiated. Therefore, even if the internal state of the substrate S is the same as that of the reference sample R, an interference pattern is generated in the combined light (measured combined light) of the first reflective probe light and the second reflective probe light. By using this interference pattern as a reference state, the substrate can be evaluated by observing the difference between the interference pattern when various substrates S are used and the interference pattern in the reference state.

  According to the semiconductor evaluation apparatus according to the fifth embodiment of the present embodiment, the reference sample R is irradiated with light for environmental control. Even in such a method, an interference pattern is generated in the combined light of the first reflected probe light Lbr1 and the second reflected probe light Lbr2, as in the case where the optical path difference is given to the two probe lights in the first embodiment. be able to. As a result, the same effect as the first embodiment can be obtained.

  Further, according to the fifth embodiment, the characteristic of the second reflection probe light Lbr2 is adjusted by the environment control light Lc. For this reason, it is easier to adjust the device configuration and the optical path than when the mirror is physically moved.

(Sixth embodiment)
In the sixth embodiment, the second probe light is changed by using a heater for controlling the reference sample R.

  FIG. 10 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the sixth embodiment of the present invention. As shown in FIG. 10, the semiconductor evaluation apparatus according to the sixth embodiment has a heater H for controlling the reference sample R in addition to the configuration of the first embodiment (FIG. 1).

  The heater H is provided below the reference sample R as a typical example. The heater H is configured to be able to release a desired amount of heat by control. When the heater H heats the reference sample R, the internal state of the reference sample R changes as in the case of the fifth embodiment. That is, when the impurity diffuses, the shape of the impurity diffusion region is changed and photocarriers are easily generated.

  Since the state of the reference sample R changes, even if the state of the substrate S is the same as that of the reference sample R, an interference pattern is generated in the combined light of the first probe light and the second probe light. By using this interference pattern as a reference state, the substrate S can be evaluated by observing the difference between the interference pattern when various substrates S are used and the interference pattern in the reference state.

  According to the semiconductor evaluation apparatus according to the fifth embodiment of the present embodiment, the heater H that heats the reference sample R is provided. Also by such a method, an interference pattern can be generated in the combined light of the first probe light and the second probe light, similarly to the case where the optical path difference is given to the two probe lights in the first embodiment. As a result, the same effect as the first embodiment can be obtained.

  Further, according to the sixth embodiment, the characteristic of the second reflected probe light Lbr2 is adjusted by the heater H. For this reason, it is easier to adjust the device configuration and the optical path than when the mirror is physically moved.

(Seventh embodiment)
In the seventh embodiment, light having the same characteristics as the second reflection probe light is reproduced using a holographic element.

  FIG. 11 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the seventh embodiment of the present invention. As shown in FIG. 11, the semiconductor evaluation apparatus according to the seventh embodiment omits the configuration for irradiating the second pump light and the probe light to the reference sample R and the reference sample R from the configuration of the first embodiment. ing. That is, the semiconductor evaluation apparatus according to the seventh embodiment includes a first pump laser Pm1, a probe laser Pb, half mirrors Mh1, Mh3, Mh4, a filter F1, and a mirror M1.

  In addition to this configuration, a half mirror Mh11 is provided on the optical axis of the first pump light Lm1 and the probe light Lb and at a position facing the mirror M1. The half mirror Mh11 reflects a part of the combined light of the first pump light Lm1 and the probe light Lb to the mirror M1.

  A filter F4 is provided between the half mirror Mh11 and the mirror M1. A holographic element is provided between the filter F4 and the mirror M1. The filter F4 transmits only the probe light out of the first pump light Lm1 and the probe light Lb reflected by the half mirror Mh11. The probe light Lb then enters the holographic element HD.

  The holographic element HD uses the light reflected by the half mirror Mh11 to generate light (reference light) Lhd having the same characteristics as the second reflective probe light Lbr2 of the first embodiment. Therefore, the reference reference light Lhd includes information corresponding to the internal state of the reference sample R.

  The holographic element HD as described above is prepared in advance by the following method, for example. That is, first, the reference sample R is prepared as in the first embodiment. Next, the reference sample R is irradiated with probe light and pump light, for example, in the same manner as in the first embodiment. Then, the probe light reflected by the reference sample R is made incident on a newly prepared holographic element. By burning this state on the holographic element HD, the holographic element HD emits the same light as the probe light reflected by the reference sample R when irradiated with light.

  Further, as the holographic element HD, an element composed of a liquid crystal display and an applied electric field applying unit that applies an electric field to the liquid crystal display can be used. The electric field applying unit applies an electric field to the liquid crystal display, thereby changing the liquid crystal of the liquid crystal display to a state where desired light can be reproduced. The probe light Lb is converted into reference light Lhd having desired characteristics as a result of passing through the controlled liquid crystal display.

  The reference light Lhd emitted from the holographic element HD is reflected by the mirror M1 and the half mirror Mh4 and then enters the optical measuring device D. Then, the holographic element HD is set so that the combined light of the first reflection probe light Lbr1 and the reference light Lhd when the substrate S is in a desired state has an extinction position, for example, as in the first embodiment. This state is set as a reference state.

  Then, in the optical measuring device D, by observing the deviation from the reference state in the state in which the combined light of the reference light Lhd from the holographic element HD set so that the extinction position is observed and the substrate S is observed. The internal state of the substrate S can be evaluated.

  With the semiconductor evaluation device according to the seventh embodiment of the present invention, the combined light of the reference light Lhd reproduced by the holographic element HD and the first probe light is observed. Also by such a method, an interference pattern can be generated in the combined light of the first probe light and the second probe light, similarly to the case where the optical path difference is given to the two probe lights in the first embodiment. As a result, the same effect as the first embodiment can be obtained.

  Further, according to the seventh embodiment, compared to the first embodiment, a mechanism for reflecting and blocking the second pump laser Pm2 and the second pump light Lm2 is not required, so that the apparatus configuration is simplified. .

(Eighth embodiment)
In the eighth embodiment, the entire surface of the substrate S is collectively irradiated with the probe laser.

  FIG. 12 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the eighth embodiment of the present invention. As shown in FIG. 12, the first pump laser Pm1 of the semiconductor evaluation apparatus according to the eighth embodiment has an irradiation port of a size that can be irradiated collectively over the entire surface of the substrate S, and the second pump laser Pm2 is The reference sample R has an irradiation port of a size that can be irradiated in a lump over the entire surface. Further, the probe laser Pb has an irradiation port of a size that can be irradiated all over the entire surface of the substrate S and the reference sample R. Then, the first pump light Lm1, the second pump light Lm2, and the probe light Lb are irradiated from the first pump laser Pm1, the second pump laser Pm2, and the probe laser Pb over the entire surface of the substrate S and the reference sample R. Is done.

  In the eighth embodiment, the first reflection probe light Lbr1 includes information regarding the internal state over the entire surface of the substrate S, and the second reflection probe light Lbr2 includes information regarding the internal state over the entire surface of the reference sample R.

  Further, the first reflection probe light Lbr1 and the second reflection probe light Lbr2 have a wide wavefront. For this reason, the optical measuring device D needs to be able to collectively collect the first reflection probe light Lbr1 and the second reflection probe light Lbr2 over a wide range. As such an optical measuring device D, for example, a charge-coupled device (CCD) can be used.

  In addition, when the light incident part of the optical measuring device D does not have a large aperture, a lens LN can be provided between the half mirror Mh3 and the optical measuring device D, for example. By doing so, the first reflected probe light Lbr1 having a wide wavefront can be converted into light having a narrow wavefront. The position of the lens LN is an example, and it is only necessary to be provided on the optical path from the substrate S to the optical measuring device D taken by the first reflective probe light Lbr1.

  It is also possible to extract the characteristics of the measurement signal more clearly by converting the measurement combined light incident on the optical measuring device D into a measurement signal by an electric signal and deconvoluting the measurement signal by the computer C.

  According to the semiconductor evaluation apparatus according to the eighth embodiment of the present invention, as in the first embodiment, the first reflection probe light Lbr1 reflected by the substrate S and the second reflection probe close to the first reflection probe light Lbr1. The substrate S is evaluated using the interference of the combined light with the light Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, according to the eighth embodiment, the probe light Lb having a wavefront extending over the entire surface of the substrate S is used. For this reason, since the internal information in the position of each part of the surface of the substrate S can be acquired in a short time, the evaluation of the substrate S can be completed in a short time.

(Ninth embodiment)
In the ninth embodiment, a plurality of reference samples R and a pump laser and a mirror are provided for each reference sample R.

  FIG. 13 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to the ninth embodiment of the present invention. As shown in FIG. 13, in addition to the configuration of the first embodiment, a plurality of reference samples R2 and R3 are provided side by side. Each reference sample R, R2, R3 is arranged side by side. A third pump laser Pm3 and a fourth pump laser Pm4 are provided above the reference samples R2 and R3, respectively. The third pump laser Pm3 and the fourth pump laser Pm4 have the same characteristics and configuration as the second pump laser Pm2, and irradiate the third pump light Lm3 and the fourth pump light Lm4, respectively.

  Half mirror Mh7 is an extension of the imaginary line connecting half mirror Mh2 and half mirror Mh5, between third pump laser Pm3 and reference sample R2, and between fourth pump laser Pm4 and reference sample R3. , Half mirrors Mh9 are provided.

  Moreover, it is on the extended line of the virtual line which connects the mirror M1 and the half mirror Mh6, Comprising: Between the 3rd pump laser Pm3 and the reference sample R2, and between the 4th pump laser Pm4 and the reference sample R3, a half mirror Mh8 and half mirror Mh10 are provided.

  For example, any one of the reference sample R, the reference sample R2, and the reference sample R3 is used to obtain the reflected probe light Lbr2 in the standard state. Then, a pump laser that irradiates the selected reference samples R, R2, and R3 with pump light is selected. At the same time, the other half mirrors are retracted by mechanical movement so that the probe light Lb is incident only on the selected reference samples R, R2, and R3. That is, for example, when the reference sample R3 is used, the half mirrors Mh5, Mh6, Mh7, and Mh8 are moved to positions that do not block the probe light Lb. As a result, the probe light Lb is sequentially reflected by the half mirror Mh9, the reference sample R3, the half mirror Mh10, the mirror M1, and the half mirror Mh4, and enters the optical measuring device D.

  Each reference sample R, R2, R3 has a different internal state. As a typical example, two reference samples each have an upper limit of the range in which the state of the substrate S should fall and an internal state corresponding to the lower limit. Then, whether or not the internal state of the substrate S is within the range specified by the upper limit and the lower limit is used as a reference for evaluating the substrate S.

  According to the semiconductor evaluation device of the ninth embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, the semiconductor evaluation apparatus of the ninth embodiment can select a reference sample that reflects the probe light Lb from a plurality of reference samples R, R2, and R3. Therefore, various evaluation methods can be realized by making the internal states of the reference samples R, R2, and R3 different.

(10th Embodiment)
In the tenth embodiment, a plurality of reference samples R, R2, and R3 are provided, and the pump laser Pm2 and the half mirrors Mh5 and Mh6 are common to each reference sample R.

  FIG. 14 is a diagram schematically showing a main part of the semiconductor evaluation apparatus according to the tenth embodiment of the present invention. As shown in FIG. 14, a plurality of reference samples R, R2, and R3 are provided side by side as in the ninth embodiment. Each reference sample R, R2, R3 is provided on one wafer stage ST. The wafer stage ST is arbitrarily movable, and by appropriately changing its own position, any one reference sample R, R2, R3 used to obtain the second reflected probe light Lbr2 in the reference state is obtained as the first. It is located below the two-pump laser Pm2. Then, the internal state of the substrate S is evaluated using the second reflected probe light Lbr2 reflected by the selected reference samples R, R2, and R3. This evaluation method is the same as in the first embodiment. Similarly to the ninth embodiment, it is also possible to determine whether or not the internal state of the substrate S is within an arbitrary range using a plurality of reference samples R, R2, and R3.

  According to the semiconductor evaluation apparatus according to the tenth embodiment of the present invention, as in the first embodiment, the first reflection probe light Lbr1 reflected by the substrate S and the second reflection probe close to the first reflection probe light Lbr1. The substrate S is evaluated using the interference of the combined light with the light Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, according to the tenth embodiment, as in the ninth embodiment, a plurality of reference samples R, R2, and R3 are used. For this reason, the same effect as the ninth embodiment can be obtained.

(Eleventh embodiment)
In the eleventh embodiment, the combined light of the probe light Lb and the first reflection probe light Lbr1 is observed.

  FIG. 15 is a diagram schematically showing the main part of the semiconductor evaluation apparatus according to the eleventh embodiment of the present invention. As shown in FIG. 15, the semiconductor evaluation apparatus according to the eleventh embodiment has a configuration in which the holographic element HD is removed from the seventh embodiment (FIG. 13). Accordingly, part of the probe Lb light and the first pump light Lm1 is reflected by the half mirror Mh2 and enters the filter F4. Then, only the probe light Lb passes through the filter F4, is reflected by the mirror M1 and the half mirror Mh4, and enters the optical measuring device D. The optical path of the probe light Lb can be arbitrarily changed by vertically moving the half mirror Mh11 and the mirror M1 by the same amount. Other configurations are the same as those of the first embodiment and the eleventh embodiment.

  One of the probe lights Lb branched by the half mirror Mh11 enters the optical measuring device D as it is. On the other hand, since the other, that is, the first reflection probe light Lbr1 is reflected by the substrate S, it has characteristics according to the internal state of the substrate S. Therefore, the probe light Lb and the first reflection probe light Lbr1 interfere with each other, and light corresponding to the difference in the characteristics of the two lights is observed in the optical measuring device D.

  The evaluation method by the semiconductor evaluation apparatus according to the eleventh embodiment can be performed by the following method, for example. First, a substrate (reference sample) having a desired internal state prepared in advance is prepared. Using the reference sample as a substrate, the optical path taken by the probe light reflected by the half mirror Mh11 to the optical measuring device D is adjusted. This adjustment is performed so that the intensity of the combined light of the probe light Lb and the first reflection probe light Lbr1 is, for example, minimum in the optical measuring device D. The combined light state at this time is referred to as a reference state, and the optical path difference between the probe light LB and the first reflected probe light in the reference state is referred to as a reference optical path difference.

  Next, the observed combined light in the optical measuring device D is observed using the substrate S to be actually measured. If the observed synthesized light matches the synthesized light in the reference state, it is evaluated that the internal state of the substrate S matches the desired state. On the other hand, if it is different from the reference state, the substrate S is evaluated as being out of the desired state. Then, by adjusting the half mirrors 11 and M1, the optical path of the first reflection probe light Lbr1 that minimizes the intensity of the measurement combined light is found. By measuring the difference between the optical path difference between the probe light LB and the first reflected probe light at this time and the reference optical path difference, the degree of deviation of the internal state of the substrate S from the desired state can be obtained. .

  According to the semiconductor evaluation device of the eleventh embodiment of the present invention, as in the first embodiment, one of the probe light Lb branched into two and the other having information on the internal state of the substrate S are combined. The substrate S is evaluated by observing light interference. For this reason, the same effect as the first embodiment can be obtained.

(Twelfth embodiment)
In the twelfth embodiment, the semiconductor evaluation apparatus according to the first to eleventh embodiments and the semiconductor processing apparatus are integrally configured.

  FIG. 16 is a diagram schematically showing main parts of a semiconductor processing apparatus according to the twelfth embodiment of the present invention. As shown in FIG. 16, the semiconductor processing apparatus SE12 according to the twelfth embodiment includes an ion irradiation unit IR. The ion irradiation unit IR irradiates the substrate S with an ion beam In having a trajectory in which the implantation angle with respect to the substrate S is set to a predetermined value. That is, the ion irradiation unit IR generates an ion beam, diffuses the ion beam to a size capable of processing a predetermined region, and makes the trajectories of individual ions existing in the diffused ion beam parallel and parallel. The trajectory of the ion beam is changed toward the processing substrate 12. More specifically, the ion irradiation unit IR includes, for example, an ion beam generation unit IG, a collimator magnet CM, and the like.

  The semiconductor processing apparatus according to the twelfth embodiment further includes an element for performing an evaluation method realized by the semiconductor evaluation apparatus according to the first to eleventh embodiments. That is, the first reflection probe light Lbr1 including information regarding the internal state of the substrate S and the second reflection probe light Lbr2 including information regarding the probe light Lb or a desired internal state desired for the substrate S are incident on the optical measuring device D. It only has to be realized.

  FIG. 16 illustrates the case where the semiconductor evaluation apparatus for realizing the first embodiment is used. As shown in FIG. 16, the probe light Lb, the first pump light Lm1, and the second pump light Lm2 are incident on the substrate and the reference sample R obliquely from above (upper left in the figure), reflected, and obliquely upward (in the figure). (Upper right) and enters the optical measuring device D.

  More specifically, the configuration is as follows. A half mirror Mh1 and a half mirror Mh2 are provided between the first pump laser Pm1 and the substrate S. The probe light source Pb irradiates the probe light Lb toward the half mirror Mh1, and the probe light Lb is reflected by the half mirror Mh2 and travels toward the substrate S together with the first pump light Lm1.

  The probe light Lb and the first pump light Lm1 are reflected by the substrate S. Then, the first reflected probe light Lbr1 and the first pump light Lm1 travel toward the filter F1. Only the probe light Lb passes through the filter F1, and then passes through the half mirror Mh4.

  A part of the probe light Lb and the first pump light Lm1 is reflected by the half mirror Mh2. The probe light Lb and the first pump light Lm1 reflected by the half mirror Mh2 travel toward the filter F2, and only the probe light Lb passes through the filter F2 and is reflected by the half mirror Mh5.

  The second pump laser Pm2 irradiates the second pump light Lm2 toward the half mirror Mh5. The second pump light Lm2 transmitted through the half mirror Mh and the probe light Lb reflected by the half mirror Mh5 travel toward the reference sample R.

  The probe light Lb and the second pump light Lm2 are reflected by the reference sample R. Next, the second reflection probe light Lbr2 and the second pump light Lm2 are reflected by the mirrors M2, M3, M4, and M5 that are sequentially arranged to face the mirror M1, as in the second embodiment. The optical path of the second reflected probe light Lbr2 is adjusted by moving the mirror M3 and the mirror M4.

  The second reflected probe light Lbr2 and the second pump light Lm2 reflected by the mirror M5 travel toward the filter F3 after being reflected by the mirror M1. Only the probe light Lb passes through the filter F3 and is then reflected by the half mirror Mh4. Then, the combined light of the first reflection probe light Lbr1 and the second reflection probe light Lbr2 enters the optical measuring device D.

  FIG. 16 shows an example in which the semiconductor evaluation apparatus and the ion implantation apparatus are integrally configured. However, the present invention is not limited to this, and for example, it can be provided together with an annealing apparatus, a CMP apparatus, and a film forming apparatus.

  Furthermore, although the example provided with the same structure as the semiconductor evaluation apparatus according to the first embodiment is shown, it is also possible to provide the same structure as the semiconductor evaluation apparatus according to the second to eleventh embodiments.

  According to the semiconductor processing apparatus of the twelfth embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Moreover, according to the semiconductor processing apparatus which concerns on 12th Embodiment, the semiconductor processing apparatus and the semiconductor processing apparatus are comprised integrally. For this reason, after processing the substrate S, the substrate S can be continuously evaluated without removing the substrate S from the apparatus. For this reason, the process and evaluation of the board | substrate S can be performed efficiently.

(13th Embodiment)
In the thirteenth embodiment, the substrate S provided in the semiconductor processing apparatus is evaluated from the outside of the processing apparatus.

  FIG. 17 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to a thirteenth embodiment of the present invention. As shown in FIG. 17, the semiconductor evaluation apparatus SE13 according to the thirteenth embodiment has a configuration in which the ion irradiation unit IR and the substrate S are removed from the twelfth embodiment.

  The semiconductor processing apparatus SP13 has an ion irradiation part IR, and a processing substrate (substrate) S is disposed therein. The semiconductor processing apparatus SP13 has windows W1 and W2 made of, for example, quartz.

  The semiconductor evaluation device SE13 is opposed to the windows W1 and W2, respectively, and has windows W3 and W4 made of, for example, quartz. The semiconductor evaluation device SE13 irradiates the substrate S with the combined light of the first pump light Lm1 and the probe light Lb through the windows W3 and W1. The combined light of the first pump light Lm1 and the probe light reflected by the substrate S goes out of the semiconductor processing apparatus SP13 through the window W2, enters the semiconductor evaluation apparatus SE13 through the window W4, and enters the semiconductor The light enters the filter F1 in the evaluation device. The filter F1 transmits only the first reflected probe light Lbr1, and the first reflected probe light Lbr1 enters the optical measuring device D.

  In the semiconductor evaluation apparatus SE13, as in the first and twelfth embodiments, the combined light of the second pump light Lm2 and the probe light is reflected by the reference sample R. Of the combined light, the second reflected probe light is reflected. Lbr2 enters the optical measuring device D. As a result, the internal state of the substrate S can be evaluated using the interference of the combined light of the first reflection probe light Lbr1 and the second reflection probe light Lbr2 based on the same principle as in the first embodiment.

  According to the semiconductor processing apparatus of the thirteenth embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  Further, according to the semiconductor evaluation apparatus according to the thirteenth embodiment, the first pump light Lm1 reflected by the substrate S is irradiated with the combined light of the first pump light Lm1 and the probe light on the substrate S in the semiconductor processing apparatus SP13. And the synthesized light of the probe light is taken in and the substrate S is evaluated. Therefore, the substrate S can be evaluated without removing the substrate S from the semiconductor processing apparatus SP13. Therefore, the substrate S can be efficiently evaluated, and the configuration of the semiconductor evaluation apparatus SE13 is simplified.

(14th Embodiment)
The fourteenth embodiment relates to an application example of the thirteenth embodiment, in which light is exchanged between the semiconductor evaluation apparatus and the semiconductor processing apparatus using an optical fiber.

  FIG. 18 is a diagram schematically showing a main part of a semiconductor evaluation apparatus according to a fourteenth embodiment of the present invention. As shown in FIG. 18, the semiconductor evaluation apparatus according to the fourteenth embodiment includes connectors C3 and C4 for connecting the optical fiber OF in addition to the thirteenth embodiment. The combined light of the first pump light Lm1 and the probe light Lb is incident on the connector (light output connector) C4 from the inside of the semiconductor evaluation device SE14.

  The combined light of the first pump light Lm1 and the probe light Lb reflected from the substrate S in the semiconductor processing apparatus SP14 enters the connector (optical input connector) C3 from the outside of the semiconductor evaluation apparatus SE14. Other configurations of the semiconductor evaluation device SE14 are the same as those in the thirteenth embodiment.

  The semiconductor processing apparatus SP14 used together with the semiconductor evaluation apparatus SE14 according to the fourteenth embodiment has connectors C1 and C2 for connecting the optical fiber OF. Light entering from the outside of the semiconductor processing apparatus SP14 and traveling toward the substrate S enters the connector (optical input connector) C1. The light reflected by the substrate S in the semiconductor processing apparatus SP14 enters the connector (light output connector) C2. The other configuration of the semiconductor processing apparatus SP14 is the same as that of the thirteenth embodiment.

  The optical output connector C4 and the optical input connector C1 are connected to each other by an optical fiber OF. The optical output connector C2 and the optical input connector C3 are connected to each other by an optical fiber OF.

  The combined light of the first pump light Lm1 and the probe light Lb emitted from the semiconductor evaluation apparatus SE14 travels toward the substrate S in the semiconductor processing apparatus SP14 via the optical fiber OF, and is then reflected. The combined light of the reflected first pump light Lm1 and probe light Lb is incident on the filter F1 in the semiconductor evaluation device SE14 via the optical fiber OF. Then, the first reflected probe light Lbr1 that has passed through the filter F1 enters the optical measuring device D.

  In the semiconductor evaluation device SE14, the second reflected probe light Lbr2 is incident on the optical measuring device D as in the first and twelfth embodiments. As a result, the internal state of the substrate S can be evaluated using the interference of the combined light of the first reflection probe light Lbr1 and the second reflection probe light Lbr2 based on the same principle as in the first embodiment.

  According to the semiconductor evaluation apparatus according to the fourteenth embodiment of the present invention, as in the first embodiment, the first reflected probe light Lbr1 reflected by the substrate S and the second reflected probe light close to the first reflected probe light Lbr1. The substrate S is evaluated using the interference of the combined light with Lbr2. For this reason, the same effect as the first embodiment can be obtained.

  In addition, according to the semiconductor evaluation apparatus according to the fourteenth embodiment, similarly to the thirteenth embodiment, the substrate S in the semiconductor processing apparatus SP14 is irradiated with the combined light of the first pump light Lm1 and the probe light Lb. The substrate is evaluated by taking in the combined light of the first pump light Lm1 and the probe light Lb reflected by. For this reason, the same effect as the thirteenth embodiment can be obtained.

  Further, according to the fourteenth embodiment, the semiconductor processing apparatus SP14 and the semiconductor evaluation apparatus SE14 are configured so as to be able to exchange light via the optical fiber OF. For this reason, the semiconductor processing apparatus SP14 and the semiconductor evaluation apparatus SE14 are installed without worrying about their relative positions, and the internal state of the substrate S is evaluated by being connected to each other by the optical fiber OF. Can do.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 1st Embodiment of this invention. The figure which illustrates the intensity | strength of reflected probe light. The figure which illustrates the intensity | strength of reflected probe light. The figure which illustrates the intensity | strength of reflected probe light. The figure which illustrates the intensity | strength of reflected probe light. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 2nd Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 3rd Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 4th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 5th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 6th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 7th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 8th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 9th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 10th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 11th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 12th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 13th Embodiment of this invention. The figure which shows schematically the principal part of the semiconductor evaluation apparatus which concerns on 14th Embodiment of this invention.

Explanation of symbols

S ... substrate, R ... reference sample, Pm1 ... first pump laser, Pm2 ... second pump laser, Pb ... probe laser, Lm1 ... first pump light, Lm2 ... second pump light, Lb ... probe light, Lbr1 ... first 1 reflection probe light Lbr1, Lbr2 ... second reflection probe light Lbr2, Mh1 to Mh11 ... half mirror, M1 to M5 ... mirror, F1 to F4 ... filter, D ... optical measuring device.

Claims (5)

A probe laser for irradiating the first probe light traveling toward the semiconductor substrate;
A first half mirror that extracts a part of the second probe light from the first probe light;
First reflected probe light obtained by reflecting the first probe light by the semiconductor substrate, and second obtained by reflecting the second probe light by a first reference sample having an internal state for reference. A light measuring instrument that captures two reflection probe lights on the same optical axis;
A semiconductor evaluation apparatus comprising: A first reflecting member that reflects the second probe light toward the first reference sample;
A second reflecting member that reflects the second reflecting probe light;
A third reflecting member that reflects the second reflecting probe light reflected by the second reflecting member;
A second half mirror that transmits the first reflected probe light and reflects the second reflected probe light reflected by the third reflecting member onto the optical axis of the first reflected probe light;
The semiconductor evaluation apparatus according to claim 1, further comprising: A first pump laser that irradiates a first pump light that travels toward the semiconductor substrate on the same optical axis as the first probe light;
A second pump laser that irradiates a second pump light traveling toward the first reference sample on the same optical axis as the second probe light reflected by the first reflecting member;
Further comprising
The first half mirror transmits the first pump light,
The first reflecting member is a half mirror that transmits the second pump light,
The second reflecting member is a half mirror that transmits the second pump light and the second probe light reflected by the first reflecting member.
The semiconductor evaluation apparatus according to claim 2. A probe laser for irradiating the first probe light traveling toward the semiconductor substrate;
A first half mirror that extracts a part of the second probe light from the first probe light;
First reflected probe light obtained by reflecting the first probe light by the semiconductor substrate, and second obtained by reflecting the second probe light by a first reference sample having an internal state for reference. A light measuring instrument that captures two reflection probe lights on the same optical axis;
An ion irradiation unit for irradiating the semiconductor substrate with an ion beam;
A semiconductor processing apparatus comprising: A semiconductor evaluation apparatus for evaluating a semiconductor substrate disposed in a semiconductor processing apparatus,
A probe laser for irradiating a first probe light traveling toward the semiconductor substrate;
A first half mirror that extracts a part of the second probe light from the first probe light;
A light output unit that transmits the first probe light to the outside of the semiconductor evaluation device by transmitting the first probe light;
A light input unit that captures the first reflected probe light into the semiconductor evaluation device by transmitting the first reflected probe light obtained by reflecting the first probe light on the semiconductor substrate;
An optical measuring instrument that captures the first reflected probe light and the second reflected probe light obtained by reflecting the second probe light by a first reference sample having an internal state for reference on the same optical axis. When,
A semiconductor evaluation apparatus comprising:

Images