TW447062B - Optical method for the characterization of the electrical properties of semiconductors and insulating films - Google Patents

Abstract

A method for characterizing a sample includes the steps of (a) providing a semiconductor material; (b) applying at least one of an electric field, a pulsed or cw light source, a change in temperature and/or a change in pump pulse intensity to the semiconductor material; (c) absorbing pump light pulses in a portion of the semiconductor material and measuring changes in optical constants as indicated by probe light pulses applied at some time t following the absorption of the pump light pulses; and (e) associating a measured change in the optical constants with at least one of a surface charge, dopant concentration, trap density, or minority carrier lifetime.

Description

447 062 A7 V. Description of the invention () Cross-referenced related patent applications: This patent application is a joint review of US patent applications, SN 08/519, 666 'Xigou August 1995-'15 An application filed by Humphrey J. Maris entitled "Ultra-Fast Optical Technology for the Characterization of Exchange Materials", the full disclosure of which is hereby incorporated by reference. Field of the invention: The present invention generally relates to the use of A method and apparatus for describing the characteristics of a sample by electromagnetic radiation, and in particular, a system for measuring at least one electrical characteristic of an ion-implanted semiconductor and a semiconductor doped by other methods, and a system of electrical characteristics of a thin film deposited on a semiconductor material ^ BACKGROUND OF THE INVENTION: Currently in the semiconductor industry, there is great interest in monitoring the presence of charges in an insulating layer deposited on a semiconductor surface. Such charges may indicate doped atoms or traps in these layers that may affect the performance of the semiconductor element. _ Existing techniques for measuring charge in an insulating layer include the following. The first technique is the capacitance-voltage profile, in which the capacitance of the electrode in close contact with the sample is measured as an applied bias voltage, and possibly a function of frequency. The relevant reference is SMSze, "Semiconductor Element Physics", New York: John Wiley and Sons, 1969, and ASGrove, "Semiconductor Element Physics and Technology", New York: John Wiley and Sons, 1967. In this variation of the method, a small amount of liquid mercury may be placed on the sample with a small capillary. contact. The disadvantage of this technique is that it must have an electrode in contact with the sample. 3 This paper size is in accordance with China National Standard (CNS) A4 (210 x 297 mm) (谙 Please read the notes on the back before filling this page). · 11 ----- Order --I ----- -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 447062 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () .. :: M.;:. And :, The second known method applies one Surface photovoltage technology. In this technique, a voltage is applied to the surface of a sample through an electrode, and the sample is illuminated by a low-intensity light source, such as a light-emitting diode whose intensity is modulated at a low frequency, such as 10,000 Hz. The disadvantage of this technique is that either the electrode needs to be contacted or the electrode will deposit a charge on the sample surface. Another method is known as a deep-level transient spectrum analyzer (DLTS). In this technique, the temperature is slowly increased and the charges are progressively released from their trap position. The change in capacitance is measured to infer the charge. The density of the trap center. However, this technique also needs to be made in electrical contact with the sample. In addition, no technique is suitable to investigate very small areas of the sample, as reducing the area detected reduces sensitivity. In the semiconductor industry, certain materials, such as silicon, germanium, and gallium arsenide, are often doped with atoms to change their electrical or mechanical properties. These doped atoms may be implanted with ions or from solid, liquid, or The gas source is introduced by diffusion, and with the introduction of such impurities, it is caused by a certain amount of lattice destruction. Its characteristics depend on the method by which they are introduced. For this reason, a variety of ions are commonly used, including boron, Phosphorus, gallium, germanium, fluorine, silicon, Bll, BF2, antimony, indium, arsenic, and hydrogen. In the case of ion implantation, these ions are accelerated to as low as thousands of electron volts or as many as hundreds of millions of volts. High energy is then directed to the surface of the material. After entering the material, ions lose energy due to collisions with the material's atoms. These collisions cause damage to the material, such as the displacement of atoms from their general lattice position, because Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) < Please read the precautions on the back before filling out this page) ^ i I] 1 --- Order ------ II-447062

V. Description of the Invention (Partially divided ion doses of the material may become amorphous rather than crystalline.) Due to the occurrence of damage (also related to the trap site) and even if no damage occurs, due to the introduction of ions themselves, the material Therefore, it is modified. For the diffused atoms, the crystal damage in the test piece, such as the substrate, may occur as the diffused atoms replace them from the lattice position of the test piece atoms. The degree of damage depends on the size of the test piece and the diffused atoms, and the source of the diffusion Depending on the density of the diffusing atoms in the species (solid, liquid, gas) and the details of the heat treatment used to drive them into the substrate, there may be no crystal damage (for example, if the lattice constant ratio of the diffusing atoms to the test piece is too small) Very small) 'In this case, the diffused atoms can occupy the void position in the test strip, and therefore may change the local electrical and optical characteristics of the test strip.-Material changes generally occur in the surface layer or area, and their depth can Low-energy ions vary from less than one hundred Angstroms to a few microns (for example, when high-energy ions are used) That is, the amount of ions introduced per unit area of the material surface can be changed within a loose range by controlling the ion beam current and the time that the ion beam is directed to the material. For diffusion, the dose can change the thermal cycle or source density. Controlled, now in the semiconductor industry, for different purposes, implantation doses as low as 1 (1) ions per square centimeter and as high as 1018 ions per square centimeter are used, material damage and introduction of ions are both As a result of changes in the electrical properties of the materials introduced around the surface, some of the damage to the crystal structure can be removed by thermal annealing of the material. In semiconductor wafer manufacturing, ion implantation or diffusion may be used in many process steps Typically, the implantation is limited to a predetermined area, that is, the implantation is patterned. Similarly, by using paper standards such as silicon dioxide or silicon nitride, the Chinese National Standard (CNS) A4 specification (210 X 297 Gongchu)

------------ (Please read the precautions on the back before filling in this page. J Order--line · Consumption Cooperation by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Du Duan 447062 A7 B7 V. Description of Invention () The impenetrable, thermally resistive layer is a blocking region, and diffused atoms can be added to the pattern. It is important to be able to monitor the dose and determine whether the correct region has been implanted or doped by diffusion. Since these regions may be Very small. For a measurement technology, it is important to have a very high spatial resolution. In addition, in order to avoid unintentional contamination of the test strip during the measurement process, non-contact measurement methods are required. Many Different techniques have been used or planned to evaluate ions. Implanted materials, including Rutherford back-scattering, Raman Spectroscopy, and sheet resistance measurements, some of these techniques have also been used Used to describe the characteristics of samples that external atoms have been introduced by diffusion.-Another method that has been used to characterize ion implantation uses a 100% intensity modulation with modulation frequency ω A laser beam directed at a semiconductor surface, as described by Opsal et al., "Method and apparatus for evaluating the characteristics of surfaces and substrates in semiconductors", U.S. Patent No. 4,854,710, the light absorbed by the test strip generates electrons Hole plasma and intensely oscillating heat waves near the surface of the test piece. Both the plasma and heat wave vibrate at a frequency ω. These forced plasma and thermal vibrations cause slight vibrations of the light reflectance of the test piece. It can be measured by turning to detect the laser light at the same point of modulating the laser light. The amplitude and magnitude of some micro-vibrations at frequency 0 caused by the reflected detection beam intensity are strongly related to ω, and can also be determined by The impact of ion implantation and related damage in semiconductors, so the measurement of this vibration part can be used as a trap or ion implantation monitoring. In this regard, also refer to J. Opsal, "used to evaluate semiconductor This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the unintentional matter on the back before filling this page)-! | Order ·! _! Line. Printed by the Production Bureau Staff Consumer Cooperatives 447062 ΚΙ ____ Β7__ V. Description of the Invention () ------------ \;] Packing --- (Please read the notes on the back of 璜 before filling this page) Method and device for the degree of implantation ", U.S. Patent No. 5,074,669. In this technique, both the unmodulated part of the reflected detection light number and the part modulated at the frequency ω are measured and analyzed. In all the techniques described above, The modulation frequency of a laser beam is typically below 10 million Hz. Optical-acoustic displacement measurement (PAD) has also been shown to be sensitive to ion implantation doses, such as S. Sumie et al., Jap · L AppL Phys_ 35, 3575 (1992) and S. Sumie et al., Jap. J. Appl. Phys., 76, 5681 (I994). In these experiments, the acoustic displacement is periodic at a frequency of 87,000 Hz These measurements are designed so that changes in light reflections due to excited electrons and holes in the material are not detected. Line · The optical method described above generally uses a periodically modulated continuous wave laser beam to excite the material. The modulation frequency is typically in the range below 10 million hertz, but this range of modulation frequency may be unfavorable. Ground affects the sensitivity of the measurement system and the ability to profile doped atoms or destroy the distribution, and may also cause the system to be sensitive to surface effects. The thermal and electrical characteristics of printed materials from the Intellectual Property Bureau's consumer cooperation department of the Ministry of Economic Affairs have also been investigated using optical pulses. Short light pulses (pulse widths of one billionth of a second or less) have been investigated. Used to heat a metal film on a semiconductor dielectric substrate, a time-delayed detection beam (pulse width is also one billionth of a second or less) is used to measure the change in the optical reflection of the metal film, and from this change, the film passes The rate of heat conduction into the substrate and the rate of cooling can also be determined. In this regard, reference can also be made to Young et al., Phonon scattering of heat flow in glass with a time scale of one billionth of a second, by AC Anderson and J'P. Wolfe (Springer, Berlin, 1986) in Coagulation Material V, page 49, and Stoner et al., Diamond 7 This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm) 4 47 062 A7 B7 V. Description of the invention () and measurement of Kapitza conduction between several metals, Phys. Rev. Lett, 68, I563 (I992), and Stoner and Moris. Kapitza conduction and heat Stream, Phys. Rev. B48, 16373 (1993). Short light pulses have been used to excite electrons and holes in semiconductors, and changes in light reflectance due to excited carriers have been measured with short probe light pulses. In this regard, reference can also be made to Auston et al. Human, 100 billionth of a second semiconductor spectroscope, Solid State Electronics 21,147 (1978), and mci et al. Physics of Ultrafast Phenomenon in Solid Plasma, Solid State Electronics 21,151 (1978), this achievement It has generally been pointed to methods to understand how electrons and holes are released and diffused, rather than characterizing the test strip. In the paper entitled "Survival Time of Carriers vs. Ion Implantation in Silicon on Sapphire", FE Doany et al., Appl. Phys. Lett. 50 (8), 23 February 1987 (pages 460 to 462) The report on the conduction of silicon film with a thickness of 0.5 micron on a sapphire substrate was completed. The author applied a pulse of 70 billionths of a second generated at a rate of 10 million hertz. The shock pulse was explained in It was acquired at a frequency of one thousand hertz, and the detection beam was obtained from the laser beam. The change in reflectance over time was obtained from the photodetector. In this experiment, because of the wide energy gap of sapphire, the Carriers cannot enter the substrate, and therefore can be confined to the silicon film, so electrons and holes are distributed almost uniformly in the thickness of the silicon film, and this assumption is used by these authors in the analysis of the data. It must be explained that The survival time of the excited free carriers is affected by the amount of 0+ ion implantation and δ + ion implantation (please read the precautions on the back before filling this page) --------- Line 'Employees of Economic Village Intellectual Property Bureau Printed by the cooperative-n IIII n ϋ IIIII 1 I n III-This paper size is applicable to the national standard (CNS) A4 specification (2i0 X 297 mm> 447062 B7 V. Description of the invention () When the quantity exceeds 3xl014 per square centimeter It is important to note that the lack of dependency of carrier survival time is that the heat generated in this method cannot be quickly dissipated and the temperature of the test strip may become very high. Non-destructive described in US Patent 4,710,030 Ultrasound technology '-a very high frequency sound pulse wave is generated and detected by the ultra-fast laser pulse method. The sound pulse wave is used to detect the interface. The ultrasonic frequency used in this technology is typically less than one. Hundreds of billions of hertz, and the wavelength of sound in a typical material is longer than a few hundred angstroms. The high-frequency ultrasonic pulses produced in this technology can be regarded as synonymous with in-phase longitudinal acoustic phonons ... more detailed , Tauc et al. Teach a system in which the transient optical response is caused by mechanical .waves (stress pulses) generated by a shock pulse and incident in the test strip. Tauc et al. Describe a system with 1 (T14 seconds to 10). _1() Pulse width excitation and the use of detection beams. These beams may irradiate the same position on the surface of the test strip, or the irradiation point of the detection beam may be shifted relative to the irradiation point of the number of lasers. In one embodiment, the film being measured It can be converted into the excitation and detection beam. The detection beam can be incident or reflected by the test piece. In one method taught by Tauc et al., The laser beam has at least one wavelength to non-destructively generate a stress in the test piece. The probe beam is guided to the test piece to intercept the stress pulse wave, and this method further detects the change in the optical constant caused by the stress pulse wave by measuring the intensity of the probe beam after the probe beam intercepts the stress pulse wave. In one embodiment, the distance between the mirror and the cube is changed to change the delay between the irradiation of the laser beam and the detection beam on the test strip. In another embodiment, an optical acoustic non-active film uses a combination of optical acoustic active media. 9 (Please read the notes on the back before filling out this page) -------- Order ------ I--line. Consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed paper standards applicable to Chinese national standards (CNS) A4 specification (210 X 297 mm) 447062 ^ A7 · .: B7 V. Description of the invention () \ The covering film, such as arsenic telluride, is investigated, and in another embodiment, the stress from the boundary The measurement of the reflection coefficient of the pulse wave, and the comparison between measurement 値 and theoretical ，, the quality of the link between the film and the substrate can be determined.

Tauc et al.'S method and equipment are not limited to simple membranes, but can be extended to obtain information on superlattices, multilayer thin film structures, and other interlayer thicknesses and interfaces of non-homogeneous membranes. Tauc et al. Also provide excitation and detection The beam is scanned over the test strip area, as small as one micron to one micron, and the change in the intensity of the reflected or incident detection beam is plotted. OBJECTS OF THE INVENTION:-A first object of the present invention is to provide an improved method for evaluating non-structural damage of a semiconductor by exciting electrons and holes in the semiconductor by using at least a short light pulse, and an optical detection light. To measure the change in the optical constant of a semiconductor as a function of time. Another object of the present invention is to non-destructively measure the electric charge in a test piece with a spatial resolution of micrometer or submicrometer. It is a further object of the present invention to provide a non-destructive, non-contact method for determining the doping amount, trap density and minority carrier survival time in a small area of a semiconductor material. SUMMARY OF THE INVENTION The present invention teaches a method and a system for characterizing ion implantation and other materials, the use of short laser pulses that excite the material to be investigated by excitation, and short-time light detection light after the application of the pulse waves To examine materials, the time-dependent changes in the material's optical constants may be processed, for example, by changes in reflectance or polarization, measured and introduced with at least 10 chemical seeds. This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 public love) (谙 Please read the unintentional matter on the back before filling in this page) Packing -------- Order -------- Line · Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 447 062 Α7 Β7 V. Description of the invention () A feature is related, for example, the change in reflectance can be related to the density of the implanted chemical seed and / or the energy of the implanted chemical seed. In one embodiment of the invention, a transient grid can be built on the surface of the test strip to provide a non-uniform distribution of electrons and holes in the test strip. According to the method and device of the present invention, it can be applied in combination with the measurement of one or more effects caused by the time-dependent change of the optical constant of the test strip due to the application of at least one shock pulse: (a) a change in reflection intensity; b > changes in incident intensity; (c) changes in reflected and / or incident light polarization; (d) changes in reflected and / or incident light phase; (e) changes in reflected and / or incident light direction, and ( f) Changes in the length of the optical path between the surface of the test strip and the detector. According to an embodiment of the present invention, the aforementioned and other problems are overcome and the object of the present invention is achieved by a method and system in which the laser pulse The wave is absorbed in an area of the test strip and will be studied. After the laser beam is applied, the detection light pulse wave is used to measure the change in optical reflectance ΔR (t) as a function of time. The response ΔΙΙ (1 :) is measured as (1) the electric field applied to the surface of the test strip, and / or (2) the intensity of the laser beam, and / or (3) another illumination source that may be continuous or pulsed (such as Continuous spectrum laser light source), and / or (4) temperature The number and spatial distribution of the carriers excited by the laser pulse may change with time due to the following process. In the first process, the number and spatial distribution of the carriers excited by the laser pulse are separated away by diffusion. Or it changes with time towards the surface of the test piece, and the rate of this diffusion is strongly affected by the amount of implantation or other damage, and is less affected by the density of doped atoms in the test piece. 11 This paper scale is applicable to the country of China Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) ---- I--Order * !!-Line_Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 47 06 2 A7 _____B7_____ 5. Description of the invention () In the second process, under the influence of the electric field in the test strip, the number of carriers excited by the laser pulse and the spatial distribution drift. Such a field may be caused by, For example, charged traps in the test strip may also be caused by the concentration gradient of the charged active doped ions, because the charge is embedded in the surface or in the material (such as oxide) placed on the semiconductor surface. The electric field may also be generated near the semiconductor surface. In this case, the magnitude and gradient of the electric field in the semiconductor is related to the doping concentration in the same semiconductor. In the third process, the load excited by the laser pulse The number and spatial distribution of electrons are related to recombination. The recombination rate of carriers is controlled by the distribution and density of recombination centers in the test strip. During the implantation process, these centers may be generated during the implantation process, or may be It is related to the doping atoms of the test strip material introduced intentionally and unintentionally, for example, by other non-ion implantation methods. The measurement of R (t), combined with a proper analysis, has been shown to be very Useful for determining surface charge, doping concentration (s), trap density, and minority carrier survival time. The externally applied electric field to the test strip produces a time-dependent change in the carrier distribution. The analysis of this change can give more information about the amount to be determined. The electric field can be applied by one or more of the following methods. In the second method, the translucent electrode is deposited on the upper end of the test strip. The electrode has at least a region that focuses on the overexcitation and detection beam size. In the second method, the translucent electrode is provided to tightly contact the test. The surface of the tablet. In the third method, the electrode with the tapered tip is occupied by about 12 (please read the note on the back before filling this page) ..: 数 -----! i Order ·!-line. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed to the national standard (CNS) A4 (210 X 297 mm) 447062 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economics B7 V. Description of the invention () The surface of the near test piece is to sense a known amount of charge on the surface of the insulating layer. The change in the laser intensity changes the number of excited carriers in the test strip. It has different forms of action for each intensity of the laser beam and the transient change of the light reflectance ⑴. For example, for two different excitation intensities Ιι and 12. The relative measured change in reflectivity is ⑴ and ⑴, so the ratio of ALi⑴ to ⑴ is related to the special time considered t, that is, ARKt) and △ RKt ^ cARXt) relationship that △ R2⑴ does not satisfy, c is and Time-independent constants, so the measurement of Δκ⑴ as a function of intensity, or wavelength, or wavelength distribution through this irradiation can more usefully characterize the test strip. Before the application of the shock wave, the change in the temperature of the test strip changed the number of carriers that appeared, and it would also change the rate at which the carriers were captured. Therefore, by this change in the temperature of the test strip, AR (t) was changed. It may be beneficial to make measurements as a function of time or all measurements at a particular temperature. This technique allows measurements to be performed under conditions that make the results most sensitive to a particular property of great interest (for example, surface charge , Doping concentration, trap density, or minority carrier survival time). By comparing the measured data with the data from the reference test strip or by comparing with the simulation, the test strip parameters are determined, and the simulation is performed to calculate the time function as a temporary phenomenon of the electrons and holes injected by the shock wave. Changes in the optical properties of the test strip. M_shows a brief explanation of the invention and other features of the present invention become more obvious. In determining the detailed description of the invention, when read in conjunction with the drawings, where: The first A picture is the first hundred The ultra-fast 13-degree scale for realizing the present invention is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public meals Ί '! Ί [¾ --------- Order ------- line ( Please read the notes on the back before filling this page) 447062 A7 B7 V. Description of the Invention () Block diagram of the preferred embodiment of the optical system, specifically, a parallel indirect beam embodiment; the first A 'diagram The part of the first A diagram is explained in more detail; the first B diagram is a block diagram of a second preferred embodiment of the ultra-fast optical system currently suitable for implementing the present invention, and specifically, it is a vertical excitation. Indirect detection embodiment; Figure 1C is a block diagram of the third preferred embodiment of the ultra-fast optical system currently suitable for implementing the present invention. Specifically, it is a single wavelength, vertical excitation, and indirect detection. An embodiment combining an ellipsometry; the first D picture is the fourth currently suitable for use A block diagram of a preferred embodiment of the ultra-fast optical system of the present invention, specifically, a dual-wavelength, vertical excitation 'indirect detection, combined with an ellipsometry embodiment; the first E diagram is the fifth currently suitable The block diagram of a preferred embodiment of the ultra-fast optical system for realizing the present invention is, specifically, an embodiment of dual-wavelength, perpendicular incidence excitation and detection combined with an ellipsometer. The first F diagram illustrates the transient state of the present invention. The operation of the gate embodiment, in which the pulse wave is divided and the surface of the test piece is strengthened and destructively dried up; the second figure illustrates a series of pulse waves of the laser pulse; the third figure A illustrates another embodiment, one of which Or multiple optical fibers are arranged to transmit the laser beam and / or the detection beam and to transport the reflected detection beam away; FIG. 3B illustrates that the cross-sectional area has been reduced to transmit a pulse of light to a small surface area of the test strip; Fiber optic lens termination; The fourth picture is an enlargement of the semiconductor wafer portion with ion implantation area. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the back first) Please fill in this page if you are not interested in it.) ——---- Order--------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 447 0 6 2 B7____ 5. Description of the invention () , Not in proportion, cross-sectional view; the fifth figure illustrates the XY platform placement mechanism used to make the laser / incident beam and the surface of the test piece intersect under the test; the sixth diagram A is a diagram illustrating that each has a different implant The change in reflectance of four semiconductor test pieces of density within 3 × 1〇_1 <)seconds;] Figure 6B is a diagram illustrating the reflectance of the four test pieces of Figure 6A in 3.5 XI0-9 seconds 1 The seventh A to Seven E diagrams are enlarged, not to scale, and the cross-sectional view 'shows the generation of charged carriers at time by the laser beam (Seventh A diagram)' diffusion of charged carriers at time t1 (section (Figure 7B) 'and the application of the detection beam at times t2 and t; 3-Figure 7F is a timing diagram related to the sequence shown in Figures 7A to 7E, where each detection beam is at time t0. With different laser beams; FIG. 8A is a cross-sectional view of a semiconductor test piece showing a translucent electrode deposited on a semiconductor substrate; FIG. 8B is a cross-sectional view of a semiconductor test piece with an external electrode in contact with the test piece; FIG. 9 illustrates the timing of a series of excitation pulses and related detection beams; FIG. Phosphorus implanted wafer changes in reflectance within one billionth of a second before and after thermal tempering to reduce damage caused by the implantation process; Figure 10B is a diagram illustrating the same for each implant Change in reflectance of 3 silicon wafers with different doses of boron atoms but different implantation energies within 3 × 10 · 1 () seconds; 15 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ί Please read first Note on the back, please fill in this page again.) Packing --- Order ---! I I--line _ Printed by the Consumer Consumption Cooperation of the Intellectual Property Bureau of the Ministry of Economy A7 Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economy 447062 Description of the invention () Figure 10C is a diagram illustrating the change in reflectance within 3 × l (Tie seconds) for each of three silicon wafers with a silicon dioxide coating layer and implanted with the same dose of boron atoms but different implanted energies; And. The tenth D picture is a picture illustrating the The change in reflectance of the wafer implanted with phosphorous in one billionth of a second, before and after the thermal tempering to reduce the damage caused by the implantation process, the investigated wafer and the tenth A -Like, but the excitation and detection beams are reduced by a factor of about two: where in the sixth A, sixth B, and tenth A, to tenth D graphs, the reflectivity is plotted in the vertical axis direction, which Units make the biggest change to one unit. Detailed description of the invention-According to the teachings of the present invention, light pulses are redirected to a test strip and partially absorbed by electrical carriers in the test strip, which then converts their energy. For the materials that make up the test strip, the conversion of the combined energy is very small. The local transient change of the light response in the test strip indicates that there is at least one transient and measurable response to the pulse of light radiation. The measured transient state or The plurality of responses may include detecting at least one modulated change in intensity of the reflected part of the pulse wave, AR measurement, detecting a change in the intensity of the incident part of the pulse wave ΔT, reflecting the change in the polarization of the pulse wave ΔP, and detecting the change in the phase of the pulse wave light AP ,and Measure the change in the reflection angle of the pulse wave ΔΘ, each of which can be considered to detect the change in the characteristics of the incident or reflected part of the pulse wave. The transient response to the pulse wave test strip mainly transfers their excited electrical carriers. The rate of energy to other parts of the test strip, the electric field, also decays at a rate that is related to the thickness and thermal conductivity of the material that makes up the test strip. 16 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back before filling in this page}

447062 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () In the presently preferred embodiment of the teachings of the present invention, the time dependence of the change in the light reflectance AR⑴ of the reflected probe beam is of most interest. In this embodiment, the time dependence and size of the light reflectance change are determined by the distribution of the foreign seeds and the process of their implantation into the test strip. In other words, from the measurement of a series of test strips, “the reflectance has been found to be changed by the inventors, and within a time range of zero to one gigasecond,” it is particularly sensitive to the degree of the ion cloth volume. It should be noted that The measured reflectance changes typically range from 10-3 to 10.5. Reference is now made to the first A diagram and the first A ′ diagram, together with reference to the first A diagram, to illustrate that the presently preferred embodiment of the device 100 is suitable for implementing the present invention. This embodiment is referred to as A parallel / indirect embodiment. This embodiment includes a light / heat source, which operates as a variable high-density illuminator, and provides illumination to a camera 124 and a test strip heat source under computer control for temperature-dependent measurement. An alternative heating method With the use of a resistive heater in the test strip platform 122, an advantage of the light heater is that it enables fast sequential measurements at different temperatures or a stable temperature. The camera 124 provides a displayed image to the operator and assists in the establishment of the measurement system. To this end, appropriate pattern recognition software can also be used, thus reducing or eliminating the relationship with the operator. BS5 is a wide-band beam splitting Device, which turns the image and a portion of the laser light to the camera 124. The camera 124 and the processor 101 can be used to automatically place the excitation and detection beams at the measurement position.

The test piece platform 122 (also visible in the fifth figure) is preferably a height (Z 17----------- Λ * ------- ^ ------- 11 J-) yi (please read the unintentional matter on the back before filling in this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

V 44 7 0 6 2 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ____B7_ V. Description of the invention () Axis), position (X-axis and Y-axis), and optional tilting (b) adjustable multi-angle freedom 'The platform' allows the controlled part of the test strip to monitor the relevant excitation and detection beams. The z-axis is used to move the test strip vertically to the focal range of the excitation and detection beams. The X-axis and γ-axis parallel the test strips. Move to the focus plane and tilt the axis to adjust the direction of the platform 122 to establish the required angle of incidence with the probe beam. This is achieved via the position-sensitive detector PSD1 and the signal processor 101 as described above. In an alternative embodiment, the light probe can be moved relative to a stationary, tiltable platform 122 '(not shown), which is used to scan large objects (such as wafers with a diameter of 300 mm, or mechanical structures, etc.). ) Is particularly important. In this embodiment, the laser beam, the detection beam, and the image signal can be transmitted to or from a movable probe via a plurality of optical fibers or a bundle of optical fibers. The laser beam splitter 126 excites and detects the incident laser beam pulse splitting (preferably with a pulse width of one mega-branch for one second or less). The beam includes a steerable half-wave plate that turns the polarity of the unsplit beam. (WP1), WP1 is used in combination with the polarized beam splitter PBS1 to cause a continuous visible separation between excitation and detection power. For a particular test piece, this separation can be controlled by a computer using a motor to achieve the best The signal-to-noise ratio and proper separation are related to factors such as the flatness and reflectivity of the test strip. Under the control of the computer, adjustment can be achieved by rotating the WP1 with a mechanized base. The first acoustic optical modulator (ΑΜΜ1) cuts off the pulse at a frequency of about 100,000 Hz, and the second acoustic optical modulator (ΑΜΜ2) cuts off the detection pulse at a frequency different from that of the modulator AM0M1, In the system illustrated in the first Α, the use of AOM2 is optional, and the optional 18-square scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) *-~ suspect (please Please read the precautions on the back before filling this page) Xiang ------ Order ------- Line—A7 Consumer Cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du printed 447 062 __B7 _.___ V. Description of Invention ( Ground, the AOM group can be synchronized with a common clock source, and can also be synchronized with the pulse repetition rate (PRR) of the laser light that generates the excitation and detection beams. The electro-optic modulator can be selectively used to replace AOM1 Or AOM2 ^ spatial filter 128 is used to maintain a stable probe beam profile, diameter, and propagation direction at an output of an input probe beam that may change due to displaying mechanical delay line actions such as retroreflector 129, The spatial filter 128 includes a pair Optical 圏 A1 and A2 and a pair of lenses. L4 and L5. An alternative embodiment of the spatial filter is to incorporate the optical fiber as described previously. If the detection beam profile from the mechanical delay line does not change, it is obvious that When the retro-reflector 129 is moved, the spatial filter 128 can be omitted.-WP2 is the second adjustable half-wave plate. It has the same function as WP1 / PSB1 of PBS2 and the combined beam splitter 126. It passes through the beam splitter PSB1. Part of the beam is irradiated in a beam area. The beam splitter BS2 is used to turn a small portion of the detection beam to the reference detector D2. The output of D2 is amplified and transmitted through a low-pass filter to give a and incident detection. The electrical signal LF2 is proportional to the average intensity of the beam. After passing BS2, the detection beam is focused on the test piece by lens L2. After reflecting from the test piece, the beam is parallelized and incident on light detector D1 after passing through polarizer 132. 'Output from D1 'Two electrical signals are obtained by giving an amplified output of D1 through a low-pass filter to give an electrical signal proportional to the average intensity of the incident detection beam' The first signal LF1 is obtained by amplifying EH The passed output is passed through a high-pass filter of the modulation frequency used by AOM1. The second signal is HF1 19 ^ · 1Λ n H ϋ ϋ I -i-rej «n ϋ I nin tm a i. YY--I nnnn [I nnn ϋ · 1 1 n I aw§ n II— I (Please read the notes on the back before filling in this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 447062 A7 ______B7__ 5. The description of the invention () was obtained. For the fixed loss on the two optical paths, after the tolerance is determined, the low-frequency signals LF1 and LF2 can be used to determine the reflectivity of the test piece. The average (dc) output of the signal LF2 and the detector D4 gives a kind of excitation and detection. Measurement of beam intensity 'These signals are provided to a computer, for example the signal processor 101, which in turn controls the mechanized half-wave planes WP1 and WP2, and the computer is programmed to adjust these for a test piece displayed at a reflectance Half-wave plane in order to give all the required optical power and excitation / detection ratio. The linear polarizer .132 is used to block the polarization of the scattered laser light and to transmit the detection beam. The beam splitter BS1 is used to turn a small portion of the laser beam and optionally a small portion of the detection beam to the first. Position. On the sensitive detector (PSD1), it is used to autofocus with the movement of the processor 101 and the test platform 122. PSD1 is combined with the processor 101 and the computer-controlled platform 122 (tilt and Z axis). It is used to automatically focus and detect the light. Focus on the test piece to achieve the desired focusing condition. Detector D1 can generally be used in reflectors, ellipsometers, and transient light embodiments of the present invention. However, the final signal processing is different for each application. For transient light measurement, the DC portion of the signal is suppressed. If you subtract the reference beam input D2 or its part, if necessary, eliminate the unmodulated part of D1, or electrically filter the output of D1 in order to suppress the non-modulated frequency. The few modulated parts of the signal are then amplified. And storage, for the ellipsometer, there are no few modulation parts. During each rotation time of the rotation compensator (see the discussion of the first B figure below), a considerable amount of the signal is sampled many times, and the resulting waveform is analyzed to produce Ellipsometry parameters, for reflectometer, caused by test piece 20

The standard applies to China's standard ^ CNS) A4 specification (210 X 297 male H ί, Xiang — (Please read the note f on the back before filling this page). Cooperative printed r- 447 0 6 2 a / _B7____ V. All unmodulated changes in the detection beam intensity of the description of the invention (by the use of D1 and D2 output signals (D2 measurement and incident detection light intensity proportional to the signal) are It was decided that, similarly, additional reflectometer data could be obtained from the laser beam using detectors D3 and D4, and analysis of reflectometer data from either or both beams could be used to characterize the test strip. The use of this beam is useful for improving the resolution and for solving any uncertainties in the solution of the correlation equation. A third beam splitter BS3 is used to steer a small portion of the laser beam onto the detector D4, its measurement and incidence For a signal proportional to the intensity of the laser beam, a third beam splitter BS4 is placed to facilitate turning a small portion of the laser beam onto the detector D3, which measures a signal proportional to the intensity of the reflected laser beam. Figure B illustrates the device 102 vertical laser In the embodiment of the tilt detection beam, the constituent units labeled as in the first A diagram have the same functions, except for the differences indicated below. In the first B diagram, the above-mentioned rotation compensator 132 is provided to realize mechanized rotation. A linear quarter-wave plate on the base and forming part of the system's ellipsometry mode. The plate is placed on, for example, a tens of hertz to continuously change the optical phase of the probe beam on the test strip. Rotates in the probe beam at a high speed, the reflected light passes through the analyzer 134 and the intensity is measured, and transmitted to the processor 101 many times during each successive rotation time. According to the known form of the ellipsometry method, the signal is analyzed to Determines the characteristics of the test strip (transparent or translucent), which allows (pulsing) the detection beam to be used to perform ellipsometry measurements. 9 Using a pulsed laser, the ellipsometry measurement is performed, which under normal conditions For the shortcomings, since the radio frequency ratio of pulse wave lightning is usually much larger than the continuous wave laser form used in ellipsometry. 21 {Please read the precautions on the back before filling this page)- --- Order --------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-^ 1 * 1 nnnnnnnn, This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) U 447062 B7 V. Description of the invention () The ellipsometry measurement performance is extremely useful in implementing some of the methods described below, in which the reflection coefficient of the mold layer deposited on the substrate needs to be determined. If transient optical measurement has been performed, the rotation compensator 132 is turned so that the detection beam is linearly polarized perpendicular to the laser beam. The analyzer 134 can be implemented as a fixed polarizer and also forms part of the system's elliptical test. When the system is used as a transient optical measurement, the analyzer 134 is turned to block the laser beam. The analyzer 134 can be implemented as a fixed polarizer and also forms part of the system's elliptical tester mode. When the system is used in an elliptical mode, the analyzer 134 is turned to block the incident and reflection relative to the detection beam. Plane polarized light at forty-five degrees. The embodiment in the first Figure B further includes a dichroic mirror (DM2), which is highly reflective near a narrow bandwidth near the excitation wavelength, and is mostly transparent to other wavelengths. It should be noted that in the first B diagram, BS4 is moved in combination with BS3 to sample the laser beam, and is used to turn a part of the laser beam to D3 and to the second PSD (PSD2), PSD2 (stimulated PSD) combination The processor 101, the computer-controlled platform 122 (tilt and Z axis), and PSD1 (detection PSD) are used to automatically focus the excitation and detection beams on the test strip to achieve the desired focus state. In addition, the lens group L1 is applied as The laser beam, image, and optically heated focusing eyepiece, when the optional lens group L6 is used to focus the sampled light from BS5 to the camera 124. Now refer to the first C diagram for explaining an embodiment of the device 104, 22 (please read the precautions on the back before filling this page). -------- Order -----! — .Line · Printed by the Intellectual Property Bureau Employees ’Cooperatives of the Ministry of Economic Affairs This paper is printed in accordance with Chinese national standards (CNS > A4 specification (210 X 297 mm)) 5. Description of invention (λ / A7 B7 Employees’ Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs Examples of printed single wavelengths, vertical laser beams, oblique detection beams, and combined ellipse testers, as before, only these previously undescribed components will be described below. Shader 1 and Shader 2 It is a computer-controlled shutter, and allows the system to use helium-neon (He-Ne) laser 136 in the ellipse tester mode to replace the pulsed detection beam. For transient optical measurement, the shutter 1 is opened to block the light. Device 2 is closed, the ellipse tester is measured, shutter 1 is closed and shutter 2 is opened, the helium-neon laser Π6 is a low-power continuous wave laser, and for some films, it has been found to produce a better ellipse tester Measurement performance. The first D diagram is the dual wavelength embodiment 1D of the system illustrated in the first C diagram. In this embodiment, the beam splitter 126 is a harmonic beam splitter and an optical harmonic generator. It is replaced by the incident optical harmonics that generate one or more undivided incident laser beams. This is accomplished with lens groups L7, L8 and optical materials suitable for generating a second harmonic non-linearity from the incident laser beam. The laser The beam is shown to pass through the two-color lens (DM1 138a) to A0M1, while the detection beam is reflected to the retroreflector. The opposite situation is also possible, shorter wavelengths may be propagated but longer wavelengths may be reflected, and vice versa However, in the simplest case, the laser beam is the second harmonic of the detection beam (that is, the laser beam has half the wavelength of the detection beam). It should be noted that in this embodiment, A0M2 can be omitted and Reduce the amount of light reaching the detector D1. As an alternative color filter F1 can be used before the detector D1. F1 is highly transparent to the detection beam and gas-neon laser wavelength but very low to the laser beam. Optical filter. 23 (Please read the precautions on the back before filling out this page) ---- 1 Order --------- Line · This paper size applies to China National Standard (CNS) A4 (210x297 mm) Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives ^ 447062 A7 _____B7_ V. Description of the Invention () Finally, the first E diagram illustrates the vertical incidence, dual wavelength, combined with ellipse tester embodiment 'in the first E diagram', the detection beam is illuminated on PBS2 And is polarized along the direction that PBS2 passes through. After the probe beam passes through WP3, the quarter-wave plane, and is reflected from the test strip, the probe beam returns to PBS2, which is polarized in the direction of high reflection, and It is then redirected to the detector DO 'D0 in the detector block 130 to measure the intensity of the reflected probe beam. For more complete details, WP3 caused the entry. The plane-polarized probe beam became circularly polarized. The habit of polarization is reversed when the sheet reflects, and appears on WP3 after reflection. The detection beam is linearly polarized perpendicular to its original polarization. BS4 reflects a small portion of the reflected laser beam to the autofocus detector. AFD. DM3, a two-color mirror, combines the detection beam, illuminator, and laser beam on the common axis. DM3 is highly reflective to the detection wavelength, and is substantially transparent at most other wavelengths. D1, the reflected helium-neon laser 136 detector, was only used as an elliptical test measurement. It should be noted that when the first E picture is compared with the first C picture and the first D picture, the 'shield 1 is repositioned so as to intercept the incident laser beam before the harmonic beam splitter 138. According to the previous description, the characteristics of these currently selected embodiments of the measuring device provide the characteristics of the test piece, in which the shorter optical pulse wave (probe beam) is turned to the area of the surface of the test piece, and then the second The light pulses (laser beams) were redirected to the same or adjacent area at a later time, shown on 24. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 cm) (Please read first Note on the back, please fill in this page again), install -------- order- ------- line · 447062 A7 _, _ B7___ 5. Description of the invention () Figures A through E The retroreflector 129 in all of the illustrated embodiments can be applied to provide the desired separation of the excitation and detection beams. Devices 100, 102, 104, 106, and 108, as described above, can measure (1) transient changes in the reflectance of the detection beam. With appropriate modifications, the device can be used to measure, and (2) penetrate the detection beam. Changes in intensity ΔΤ, (3) changes in the polarization of the reflected probe beam ΔP, (4) changes in the optical phase of the reflected probe beam Δφ, and / or (5) changes in the reflection angle of the probe beam ΔΘ "can be all It is considered as the transient response of the test strip, which is caused by the pulse wave. These measurements can be completed with one or more of the following: (a) the amount (1)-(5) any measurement is only listed Is a function of the incident angle of the excitation or detection beam, (b) the amount (1)-(5) any measurement is a function of the excitation and / or detection beam exceeding one wavelength, and (c) the incidence of the excitation and / or detection beam And reflection average intensity measurement, light reflectance measurement, (d) measurement based on reflection, excitation and / or detection beam average phase change measurement; and / or (e) incident and reflection excitation and / or detection beam average pole Measurements and phase measurements, quantities (c), (d), and (e) can be considered The average or statistical response of the sheet to the laser beam. The five embodiments 100, 102, 104, 106, and 108 ', as described above, have the characteristics that a series of shock pulses are generated and turned on the surface of the test piece. Each shock pulse changes smoothly across the area. Intensity to illuminate the same area of the test strip, using the transient transient fence method described by PhilUon et al. (DW Phillion, DJ Kuizenga and AE Siegman, Appl. Phys. Lett. 27,85 (1975)) Optical response measurement is also within the scope of the present invention. As a barrier for inductive transients, each pulse wave is divided into two or more units by a beam splitter or a beam splitter group. Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read note i on the back before filling out this page) iji — Order ·! ---. Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperative of the Ministry of Economic Affairs, 147062 A7 __B7___ V. Description of the invention () Separate light paths and then all are turned to the same area on the surface of the test piece, if different units are turned to the table at different angles In some places in the area, there will be intensive interference between different units, and in some places, the interference will be destructive. Therefore, the total intensity of the laser will change on the surface of the test strip. In the case of 1 ', as shown in the first F. figure, the intensity will change periodically on the surface of the test piece. The period of intensity, that is, the distance between consecutive points of maximum intensity, is determined by laser light. The wavelength and the angles and degrees of the different units of the laser incident on the surface are determined. Then the amount of light absorbed in the structure will change periodically on the surface, and the number of electrons and holes generated by the laser will be on the surface cycle. Changes in the optical properties of the test strip due to electron and hole intervention will also periodically change on the surface of the test strip. The change in the transient change of the optical characteristics of the test strip is equal to the surface of the test strip. A consistent transient diffraction fence is generated. When the detection light 2 is incident on the area excited by the laser beam, a portion 4 of the detection light will be diffracted ', that is, the portion of the detection light will be in one direction. Or a group of parties The measurement of the intensity of the diffracted detection light towards the direction of reflection, away from the reflection 3, provides an alternative method by the detector D1 as a function of the time delay t between the application of the excitation and detection beams As the characterization of the transient optical response generated by the excited carriers in the test strip. The typical optical pulse characteristics of the system 10 (M8) applied to the first A to E graphs are as follows. The shock pulse has an energy of approximately 0.01 to 100 nanojoules per pulse, approximately Each pulse has a period of 0.01 megaseconds to 100 megaseconds, and a wavelength in the range of two hundred nanometers to four thousand nanometers, and the pulse repetition rate (PBR) ranges from one hundred hertz to five billion hertz. And, as shown in the second figure, 26 paper sizes are applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (谙 Please read the precautions on the back before filling this page) 1—Order -------—- line. 447 062 A7 B7 V. The description of the invention () shows that the intensity of the shock pulse sequence may be adjusted from 1 Hz to 100 million Hz according to the pulse wave repetition rate. The pulse wave is focused to form a focal point on the surface of the test piece with a diameter of about ten to twenty micrometers, although the smaller focal point size, which results in a smaller side resolution, can also be applied. A diagram, transmitting a pulse wave, or detecting a pulse wave, or exciting and detecting. Both measuring the pulse wave through the optical fiber 44 are also within the scope of the teachings of the present invention. Alternatively, a second input optical fiber 46 may be provided, whereby the pulsed pulse is transmitted through the optical fiber 44 and the detection pulse is transmitted through the optical fiber 46. Another optical fiber 48 may also be applied to receive the reflected detection pulse and transmission. The same to the light detector 34, for this embodiment, the endpoints of the optical fiber (group) are attached and supported by a support platform 50, which is preferably connected to the brake 54 via a member 52, such as Linear brake or two-degree-of-freedom position mechanism. In this method, the reliability and repeatability of the measurement process are improved, in which the magnitude, excitation, or excitation of the excitation and detection beams focused on the surface of the test strip and Minor changes in position and direction or the laser output beam profile, or can be used to affect the delay tD changes in the probe beam profile for any mechanical platform movement. Preferably, the end points of the probe beam transfer fiber and The angular direction between the end points of the reflected probe beam transmission fiber optimizes the concentration of reflected probe beam light from the surface of the test strip, using one or more lens groups next to the fiber Optical fiber clusters are also within the scope of this invention, in order to focus the output light beam from the optical fiber on the surface of the test strip, or to collect the reflected detection light and turn it into the optical fiber 48 in the third A diagram. The third B diagram shows an embodiment, The diameter of the terminal portion 44b of the excitation and / or detection beam transmission fiber 44a is reduced, such as by extending the fiber, 27 (please read the precautions on the back before filling this page) .. ---------- -Order --------- line. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, this paper is sized for the national standard (CNS) A4 (210 X 297 mm) 447062 A7 B7 V. Description of the invention () In order to provide a focal point 44c having a diameter smaller than the normal range of optical focusing, when combined with the embodiment of FIG. 3A, this allows the excitation and / or detection pulse to be repeatedly transmitted to a very small area on the surface of the test piece ( (I.e., dots less than one micrometer in diameter), ignoring any changes in the optical path length of the probe beam. The ninth figure illustrates the various time delays (tD) between the application of the shock pulse (P1) and the subsequent detection pulse (P2). The time distribution is from t1 to tMAX. Since some examples of devices that are currently preferred for obtaining test strip measurements have been described, the following description will focus on the use of this device for ion implantation and other test strip types. I noticed for the first time that the computer simulation was used to calculate the change in the light reflectance ARsim⑴ of the test strip. Within the scope of the present invention, when it is illuminated with a pulse wave of unit energy per unit area of the test strip, the simulation can also The statistical reflection coefficients of the excitation and detection beams give a chirp, and the system measures the transient change △ Ppbe-ren when the reflected detection pulse power is determined. For example, with the photodiode D1 in the first C diagram, it also varies from The ratio of the power in the incident and reflected beams measures the statistical reflection coefficient of the excitation and detection beams. The incident detection power is measured by photodiode D2 in Figure C, the reflected detection power is measured by D1, and the incident excitation power is measured by D4. Is measured, and the reflected excitation power is measured by D3. Connect the simulation results of such transient changes in optical reflectance to actual system measurements to easily know: (a) the power of the excitation and detection beams, (b) the intensity profiles of these beams, and (c) their overlap on the surface of the test strip . Assume that the first laser beam is incident on the area Apump and in this area 28 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page). .... 乂 .... install -------- order --------- line-'Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 447062 A7 _______B7_ Five 'Invention Description () The intensity of the medium shock is the same. In this way, the shock energy absorbed by each unit area for each shock pulse is P, pump-inc 0- ~ Rr,

.A ⑴ pump where f is the repeatability of the pulse wave sequence, and Rpump is the reflection coefficient of the laser beam. Therefore, the light reflectance change of each detection light pulse will be: 1-Λ 'pump (2) and the power change of the reflected detection beam will be: A jo _ pan / t \ ^ pump-mc ~ ^ pump) probe-ref \ — ^ pr ^ be ^ mc ^^ sim v). (3) (锖 Read the business matters on the back before filling this page) pump In an actual system, the illumination of the test piece will not actually Generate a uniform intensity of the incident laser beam. In addition, the intensity of the probe light will also change with the position on the surface of the test strip. In order to calculate these changes, the equations are modified to: Ppump-inc 0 and / = p 1 probe- ' mc x pump-(4) active equipment -------- order ----------- line printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs (5) purnp- tctive

The effective area Aeffeetive is defined by the relationship: if) dA \ lpmb ^ J?) DA where ^ «(0 and ktJF) are relative to the intensity of the detection and laser beam on the surface of the test strip. One can consider AeffeetiVe as the detection and The laser beam weighs the effective area of the cum. A similar notation can be derived as a change in light transmission ^ 7 (〇, change in optical phase ΔP (0, change in polarization ΔP⑴, and change in reflection angle of the detection light Δ / 5 (t). 29 paper dimensions Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) '447 06 2 A7 B7 V. Description of the invention () The immediate quantity can be measured by the system: △ Pprobwen, Ppbe-inc Ppump 丨 nc, I ^ pump, Rprobe, 模拟 predicted by computer simulation, Rpump and R_be, so the close comparison between simulation and system measurement can be done to determine the characteristics of the test piece. (1) Comparison of simulated and measured reflection coefficient Rpump. 2) Comparison of simulated and measured reflection coefficients Rpn) be. (3) Comparison of simulated and measured transient state changes in the power of reflected probe light ^ PP_wefl comparison. To complete the comparison of simulated and measured changes, from the previous equation ( 4) Aeffeetive 値, which must be known, can be accomplished by one or more of the following methods.-(A) The first method directly measures the intensity changes of the excitation and detection beams on the surface of the test strip, I.e. a function of / __ (?) And sum position And the results of these measurements are used to calculate Aeffeetive, which may be achieved but requires very careful measurement, which may be difficult to achieve in the industry. (B) The second method measures the test strips known by Aeffeetive in the area S on the system Transient response A Pprobe-refi. This method then measures the area Aeffe (; tive on the system s'; the response of the same test strip will be determined. The ratio of the response on the two systems gives the inverse of the ratio of the effective area of the two systems. It is an effective method, because the system S can be selected as a specially established system, in which the area illuminated by the excitation and detection beams is larger than that of an instrument that requires fast measurement capabilities. Since this system has a large area, the surface of the test strip is measured. The changes in the intensity of the excitation and detection beams are relatively simple, that is, the sum is a function of the position, or even the simulated reflectance change is 30. This paper size is applicable to the Chinese national standard < CNS) A4 specification (210 X 297 public love) (Please read first Note on the back, please fill in this page again.) ---------Order --------- Line. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 447062 A7 —______ B7__ 5. Description of the Invention (5) This method is effective when the calculated amount of () is unknown. (C) The third method measures the transient response of all test strips in which the quantity is known △ Ppmbe.refl, which is the input test strip. In the calculation of the simulated reflectance change ΔRsimOO, when it is illuminated with a pulse of unit energy per unit area of the test strip, then by measuring the transient response △ PpMhW and expected from Equation 4. Comparison of response, The effective area Aeffeetive is determined. The above detailed description of the method used to link the simulation results of light reflectance transients and other light transients and reactions is appropriate only if the change in light characteristics induced by the pulse wave is directly related to the intensity of the pulse wave When it is proportional, if the response is not proportional to the intensity of the shock wave, method (a) must be used. It is very important that the effective area Aeffective is stable throughout the measurement process. In order to ensure this, the equipment shown in Figures A to E is used to automatically focus the excitation and detection beams on the surface of the test strip. Mechanism in order to achieve reproducible intensity changes of two beams within each measurement time. The autofocus system provides a mechanism to maintain the system in a previously determined state, where the size and relative position of the beam on the surface of the test strip are effective. Transient response measurements are appropriate. It should be noted that for any application where the amplitude of the transient response to light is used to infer quantitative conclusions about the test strip, the calibration scheme described previously is an important feature of the measurement system. The method used to compare computer simulation results with system measurements. The foregoing description assumes that several detectors are calibrated in the measurement system. It should be carefully considered that such systems will use detectors operating in a linear region such that each detector The output voltage v of a detector is proportional to the incident light power P. For each paper size of 31 papers, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. (锖 Read the precautions on the back before filling (This page) Install ------ --Order ---- 1 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs of the Employee Consumption Cooperation Du printed 447062 A7 _____B7_ V. Description of the invention () Test In terms of sensors, there is a constant G such that V = GP. The previous description assumes that the constant G is known to each and all detectors. In this case, the relevant measurement Pprobe-inc The individual calibration factors of each of the individual detectors of Ppump-inc and △ Pprobe-refl can be combined with Aeff «tive and f to form a single calibration constant C for the entire system. Therefore, according to the calibration constant C, Equation 4 can be expressed as : ^ ^ Pro be ^ rcfl = CVprobc ^ „c / ^ Rsim (1-Rpump) (6) where is the output voltage from the detector used to measure the power variation of the reflected probe light (Dl), Vpump.in. is used to measure The output voltage of the detector of the incident laser (D4), and Vpr () be_ine is the output voltage of the detector used to measure the incident detection light (D2), so it is sufficient to determine the constant C, which can be determined by Either of the two methods is completed. (A) The first method measures the transient response △ V —... fl for all test strips whose known quantities are input into the calculation of the simulated reflectance change AUt of the test strip, When it is illuminated with a pulse of unit energy per unit area of the test strip, the method is to measure VprObe, inc Vpump, inc 'again and then determine Rpump by measuring or simulation from a computer, the method then It is found that the constant 値 of C makes Equation 6 satisfied. (B) The second method measures the transient response AVpn) be_refl on the control panel. When it is illuminated with a shock pulse of unit energy per unit area of the test strip, its Transient optical response AR⑴ has been measured using previously calibrated systems, for example Say, by one or more of the methods described above, the method then measures the VprObe-inc hand port VpUnip-inc, determines Rpump 'by measurement, and then finds that the constant c 値 makes the following equation satisfied: 32 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back # before filling out this page)-H ϋ I ϋ J * l · 一 -SJ * ^ ^ ^ ^ Μ · _ MM I ^ ^ ^ ^ I 1 ^ ^ ^ ^ ^ ^ ^ ^ f. 447062 B7

Fifth invention description () ^ prab ^^ fl = CVproU-^^ y, mmp- «c〇 ~ ~ Rp» mp) (7) For these two methods, 'the autofocus state needs to be established before performing the measurement △ Vpmbe Since C is related to Aeffeetive's puppet. The graphs in Figures 6A to 6B illustrate the data obtained from four boron implanted wafers (named B1-B4). Each curve plots the change in light reflectance Δ

As a function of R (t) and time, the shock wave has been absorbed in the test strip (t in Figure 7A and Figure 7F). 'The implanted energy for each wafer is 40,000 electron volts, and The implantation amount is shown in the table— ° TART.H1 SAMPLE stores n〇SF, (cm · ^ B1 0 B2 5xl010 B3 5χ10π B4 5χ1012 The fourth figure illustrates the test piece 30, which is composed of a semiconductor material such as silicon. There is an implantation range located on the surface 30a. The implantation range is composed of implanted atoms and traps. The set shows as 31. Among other factors, the depth of the implantation range is the quality of the implanted ions, which may include the cover layer. A function of the crystalline properties of the sheet material and the implantation energy 15 'The graphs of the sixth graph A to the sixth graph present data showing the recovery rate of the semiconductor material. After excitation, the monolithic increase in order to increase the implantation amount and increase the implantation energy. The change in the maximum reflectance occurred in the first few megaseconds, after the application of the shock wave. The best procedure to obtain the implantation amount of the unknown test strip is the most accurate estimation as follows, the first pair of some implants The level is included in the test specimen li ^ cm · 2 and 5X101 () cm · 2) AR (t) data of known test strips are taken out. This reference data may be stored in the data storage element. Compensation is performed to obtain △ 33 for the intermediate implantation amount. (Please read the notes on the back before filling out this page.) 1:-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ Paper standards are applicable to the national solid standard (CNS ) A4 specification (2i0 X 297 mm) ^ 447062 A7 ____ B7 _; __ — V. Description of the invention () The estimated curve of R (t), the comparison between the third difference drawing line and the curve obtained from the unknown test piece is completed To determine the amount of unknown test piece implants. (Please read the notes on the back before filling this page.) It should be noted that it is not necessary to measure the entire curve of the ⑴-to- 畤 function. Some predetermined number (such as 3) can be immediately selected at a suitable time. Measure AR (t) on the ground, and perform analysis based on the results obtained by the selected feature, by way of example only, and with reference to Figure 6B, it may take only 50, 100, and 150 megaseconds Decide on ⑴, or at times of fifty, two hundred and fifty, and five hundred megaseconds, and make a delta R (t) curve from the measured point difference. Data on a group of other implant species including arsenic, germanium, silicon, boron difluoride, hydrogen, and phosphorus have also been obtained. In general, the delta Dyz curve form is quantitatively comparable to those shown in Figures 6A to 6B. Shows similar results for boron fishing. From the example, the upper AR 上方 curve in the tenth circle A illustrates the data obtained from the surface 30a of the silicon test piece 30 implanted with silicon and phosphorus ions. The implantation amount is 1014cnT2 and the implantation energy is 30,000 electron volts. The two curves of the square illustrate the results obtained by tempering the same test piece at 950 degrees Celsius for thirty minutes. These measurements show that the invention can be used as a test to determine that the tempering of implant damage has been achieved. The tenth B graph printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economics illustrates the idea of the present invention, in which the implantation energy can be determined from the measurement of AR (t). Measurements of the wafer were shown, and the test piece was implanted at the ion energy of thirty, fifty, and one million electron volts as indicated in the figure. It should be noted that each of the three data sets has been independently The reduction causes the change in reflectance to be normalized to have a unit size. 34 This paper size applies the National Painting Standard of Yinhua (CNS) A4 (210 X 297 mm) 447062 A7 ___B7____ V. Description of the invention () Figure 10C illustrates the idea of the invention, in which the implantation amount can be markedly marked The cover layer that does not absorb the excitation or detection beam is determined. Measurements of three silicon wafers implanted with boron ions at a density of 1012 cm_ '2 are shown. The test strips are at thirty, fifty, and one as indicated in the figure. Millions of electron volts are implanted under ion energy, and each silicon test strip is plated with a layer of dielectric material, specifically dioxide. Silicon, having a nominal thickness of about two hundred and twenty Angstroms, apparently according to the present invention The teaching measurement system has the ability to implant the characteristic of the material layer through the cover layer or does not strongly absorb the wavelength of interest (that is, in the current example, the wavelength is in the range of seven hundred to eight hundred nanometers). Results obtained with an excitation and detection beam at a wavelength of about 750 nm. Figure 10D illustrates the data obtained from the same wafer by using an excitation and detection beam at a wavelength of about 400 nm. Range, light absorption It is relatively large, 'the high absorption of light near the surface layer forms a stress' which causes a mechanical wave that will develop in the structure, and when this wave propagates away from the surface, 'it produces a local change in the optical properties of the wafer' in the mechanical wave Temporarily appears, the detection light pulse wave receives partial reflection, and the interference between the detection light pulse wave reflected by the mechanical wave and the detection light reflected on the wafer surface causes the AR⑴ oscillation visible in the tenth D picture, which is thermally tempered. In the wafer, the light absorption in the implanted area near the wafer surface is not so large, so weaker mechanical waves are generated and the chirp oscillation is smaller. Therefore, the determination of the oscillation intensity provides other methods to evaluate the near crystal. Status of the ion implantation layer on a round surface. For a given implanted atom and energy, the plutonium result may be affected to some extent by several other parameters. These may include the 35 national standards (CNS) A4 (210 Χ 297mm) (Please read the precautions on the back before filling out this page.) -------- Order --------- line. Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperatives, number 447062 A7 --- ___I_B7___ V. Description of the invention () Photoluminescence of bit area, doping of semiconductor materials (if any), other characteristics of surface treatment ', and measurement of laser pulse intensity, if this If this is the case, it is necessary that the known test strips be prepared and / or characterized in the same way as the unknown test strips or in the same way. Referring to the seventh A to seventh E diagrams, it is believed that the observed phenomenon can be understood as follows. As shown in the seventh A diagram, a part of the laser beam is absorbed in the implanted area and the remaining part is absorbed in the test piece 30 In the test strip, the absorption length (d) is related to the wavelength. For the wavelength range of 700 to 750; one hundred and fifty nanometers. For silicon test strips, the absorption length is typically seven millimeters. The absorption of the laser beam Causes the generation of charged carriers, in other words, the electrons (e-) and holes (e +) are generated within the absorption length distance. Free electrons and holes affect the optical "constant" of the semiconductor test strip and cause the reflectivity to become-. In the ion cloth wafer, the charged carriers at or near the surface 30a will quickly recombine. Figure 7B shows that the charged carriers diffuse into the implanted area of the test piece and the surrounding unimplanted area, and the excited carriers are removed. The rate is determined by the surface recombination rate and the diffusion coefficients of the electrons and holes in the semiconductor material. In the implanted area, the removal of charged carriers caused by recombination and trapping at the trap site will and will occur in non-implanted semiconductors. There are significant differences in the removal of charged carriers in materials. Therefore, unlike referring to the aforementioned report by F. E. Doany et al., In which thin film of semiconductor materials, charged carriers must diffuse before they can react with implanted ions and traps near the surface of the material. Figure 7C illustrates the first probing pulse that arrives at time 12, for example, one ten billionth of a second, after the shock pulse (t.) Arrives and shines on 36 (please read the back first) Please note this page before filling in this page) 1 I ---, install --------- order ------! · Line · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economy The paper size is applicable to 7 national standards (CNS) A4 specifications (210 X 297 mm) 447062 A7 B7 V. Description of the invention () Entry area, seventh D The figure also illustrates the first detection pulse that arrives at time t2, but shines on the unimplanted area. In this case, it is obvious that the optical characteristics of the implanted and unimplanted areas will be different. The change in the light reflectance of the light beam and the final test strip will also be different. Figure 7E illustrates the first detection pulse wave that arrived at time t3, for example, one billionth of a second, in the pulse wave (to). After arriving, and illuminating the implanted area, comparing the seventh C and the seventh E, we can see that after the shock pulse absorption, the more elapsed, one hundred billionth of a second, less charged Carriers will remain in the implanted area. The decrease in the number of charged carriers will cause a correlation, and the change in the optical constant of the measurable test strip. For example, the 30-time reflectance of the pulse wave test strip is time-dependent. Variety. The present invention finds the above-mentioned mechanism to measure changes in reflectivity, polarization, phase and the like due to changes in optical constants within a time range, and compares this change with implant dose, implant energy, type of doped seed, The presence or absence of chemical seeds in the film area and the degree of implant-related damage are related to other effects related to the introduction of chemical seeds into the test strip. The ninth figure clearly shows that the excitation and detection pulses can be applied in pairs, that is, for each laser beam, a single detection beam is applied to the test piece to measure the change in reflectance. For example, for a series of Each of which is limited to time tQ, the associated detection pulses are applied at different time delays (tD) t !, t2, t3, and tmax, and the distance between the pulses (for example, 1 / 75MHZ or 13.3 nanoseconds) to ensure that the optical effect caused by the previously detected pulse wave has become very small, before the next shock pulse is applied. Another aspect of the present invention is the addition of a single shock pulse, which is followed by two 37 paper sizes that are in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm). --- (Please read the notes on the back before filling this page) Order--Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics ^ 447 06 2 A7 ___ B7 V. Description of the invention () Pulse wave. Another aspect of the present invention is to add one or more shock pulse waves, and a continuous wave or substantially continuous wave detection pulse wave. It should also be obvious from the ninth figure that the present invention can characterize the implanted and diffused regions in a very short period of time, that is, assuming that three probe beams are used and used to extrapolate the chirped curve The final reflectance measurement, the entire measurement process can be frozen in about forty nanoseconds, or the time required to generate three consecutive shock pulses (and related detection pulses) at a rate of 75MHz, however, in order to compensate the detection With the variation of the laser pulse, a series of measurements are preferably performed and then averaged over a longer period of time to improve the signal-to-noise ratio. -An aspect of the present invention is that the wavelength of the shock and / or detection pulse is changed during the measured time period, and using other wavelengths in the range other than 700 to 750 nanometers, the change in wavelength may also be considerably reduced. The data acquisition time, the same reduction of the spot size of the surface 30a should also reduce the measurement time. An aspect of the present invention is to generate a series of shock pulses at a first frequency (A) and a series of probe pulses at a second frequency (f2), where f2 is not equal to, in this case, the signal is averaged. The trigger can be triggered at a rate equal to f!-F2. In addition, the teaching material suitable for other types of test specimens other than silicon, as taught in the present invention, includes, but is not limited to, germanium, Group III and Five alloy materials (such as gallium arsenide, aluminum gallium arsenide), and group II and six alloys. The material taught by the present invention is not limited to the specific chemical seeds that have been described above. In addition, the system according to the present invention is also very suitable for measuring chemical seeds that have been solidified. (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by Consumer Cooperatives ^ 447062 V. Description of the invention (Test strips into which liquid and gaseous sources have been diffused 'and in which the amount of physical destruction of the test strips can be ignored. Another aspect of the present invention is to stimulate and / or detect pulses. The wavelength of the wave beam can be selected or adjusted to the energy level of the chemical seeds that have been introduced into the test strip or to the energy transfer of the test strip itself, thus enhancing the sensitivity and reducing the induction of surface effects by the measurement. One This embodiment assumes that a photodetector with an appropriate response time is available, and the detection pulse wave can be eliminated. The photodetector used to measure the change in optical constant is measured within the time of the pulse wave itself. It should be clearly understood that the teachings of the present invention overcome the problems with earlier-mentioned optical measurement systems. For example, the measurement system of the present invention operates on a time profile, rather than a frequency profile, by using a very short time scale. Only the transient effects are considered. Even in a series of exciting pulses, the number of charged carrier background balances may be generated. The system of the present invention only examines the transient changes caused by the recent exciting pulses, and it is not particularly The ground cares about the dynamics of the number of background balances. In addition, the acoustic technology of Tauc et al., For example, can be applied as an appendage to the system according to the invention, for example, the acoustic technology can be applied to measure the depth of the implanted area, At the same time, the measurement technique of the present invention can be applied to determine the density of the implanted seed. By another example, the upper part of the tenth D picture is ΔΚ_⑴ 曲Explain the data obtained by implanting silicon and boron ions on the surface 30a of the silicon test piece 30, the dose is per square centimeter and the implantation energy is 30,000 electron volts. The following two curves show that the same test piece passes through 950 degrees Celsius After 30 minutes of tempering 39 ------------ Cantonese (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

• ^ T-eJ «I- n ϋ I n IJ n ϋ nn ϋ I ϋ I« n II ϋ 1 nnnn---I Private paper size applies Chinese National Standard (CNS) A4 specification (21〇x 297 mm) A7 right 447062 ___________ B7__ 5. Description of the invention () The measurements obtained are made using light pulses with a wavelength of four hundred nanometers. As mentioned earlier, at this short wavelength, light is intense in the layer near the surface. Ground absorption and stress appear in this area. This stress expands and stretches the pulse wave into the wafer. This tension causes local changes in the optical properties of silicon. When the detection beam passes through the area containing the tension pulse wave, it will be partially reflected. The interference between the reflected part of the probe light and the probe light part reflected on the silicon wafer surface causes the light reflectance to oscillate, which can be seen in the tenth D figure. The magnitude and frequency of these oscillations can be used as ions. Density The extent to which the detection and destruction have been tempered ° What should be understood is that the measurement is completed in a very short time scale, typically less than one nanosecond, because this very short time scale, the laser pulse The carrier mobility in a surface region of the test piece, and the surface where the doped surface electric field has an important influence, the measurement is not possible to give a longer time may be obtained by the present invention utilize this type of information. Several application examples that can take advantage of the teachings of the present invention will now be presented. An example of interest is a semiconductor test piece whose PN junction has been formed by doping, for example, via diffusion or implantation. The magnitude and direction of the electric field in the interface area in this case is related to the detailed distribution of electrically active doped atoms in the test strip. The behavior of the electrical carriers injected by the light-induced pulse from the periphery of the interface is affected by the doped atom distribution and the In this way, it is related to the limitation of the electric field. From the appropriate model of the interface, the temporary behavior of the injected carriers and the effect of these carriers on the optical reflectance of the test strip can be calculated when they move in the electric field. The same test strip The concentration and distribution of doping atoms in the medium can be adjusted from 40 paper sizes to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (read the notes on the back of the poem before filling this page). Cooperative printed V V ___ /-IIIII 1 I-/-II--I 1. I--------II----!!-----1. k 447062 A7 B7 V. Invention Explanation () Some parameters Show, for example, the doping atomic concentration on each side of the interface, the width of the metal surface of the interface, and the dielectric constant of the semiconductor, and these coefficients can be adjusted in the model to obtain and measured in an appropriate time period The optical reflectance data most closely match the simulation results. Under this method, the PN junction can be characterized by the ultra-fast optical system of the present invention. Other examples of interest are charged traps that may be caused by the implantation process. 'The implanted test strip contains the original implant damage and has a surface charge. In such a test strip, the megasecond reflectance change is modeled, and then In order to make it conform to the measurement, the parameters of the model 'must be calculated into the test strip parameters for calculating the surface electric field in the test strip', such as the electric doping concentration, bipolar diffusion, and the recombination ratio of electrons and holes. ^ Another example of interest is a test strip with negligible implant damage, such as' it may have been tempered, or it has not been doped, or it has been doped by methods other than implant, but With a surface oxide layer containing a possibly unknown charge concentration, in this case, the bipolar diffusion rate in the test strip will be essentially similar to that of non-implanted materials, and the behavior of the photocarriers injected by the shock wave will be due to The control of the electric field caused by the charged surface oxide layer will also be related to the dopant concentration that may be unknown in the semiconductor. Since all the factors that follow the sample are considered to calculate the electric field in the test piece, it is possible to calculate the light injection in this electric field. Carrier movement is also possible. It is possible to measure the doping concentration and the surface oxide charge by adjusting the appropriate parameters in such a test strip model in order to obtain a megasecond transient reflectance measurement. The method used to calculate the electric field due to doped atom gradients and surface charges in semiconductors is a conventional technique. In this regard, refer to SM Sze, "41 (Please read the precautions on the back before filling out this page). ---- Ordered------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ Paper Size ϋ + ® S Practice Standard (CNS) A4 Specification (210 X 297 mm) 447 062 A7 _ B7 5 、 Explanation of Invention () Semiconductor Element Physics ", New York: John Wiley and Sons, 1969 and AS Grove," Semiconductor Element Physics and Technology ", NewYodc: John Wiley and Sons, 1967. Another example that is of interest is that it may have very A semiconductor test piece with little or no damage, but it may contain doped atoms and possibly other impurities. However, it cannot be considered as doped atoms because they are introduced into so-called deep-level traps in semiconductor materials. Semiconductors may also have Surface charges in the same situation, which cause an electric field and deep energy stepping. The well provides a mechanism for the photocarriers injected by the composite shock wave, and the rate of recombination can be controlled by a few carriers The live time may alternatively be characterized by the surface recombination rate, so by doing a piece of reflectance megasecond transient attenuation measurement and correlating this result with the number and distribution of injected carriers, the minority carrier survival time or surface The recombination rate can be determined, and since these parameters are related to the amount of impurities in the semiconductor wafer, the measured survival time or recombination rate may be related to the concentration of impurities. All the examples listed above can be affected by electric field, light irradiation, or test strip temperature changes. According to the present invention, measurements made as a function of one or more of these parameters allow a broader measurement of test strip characteristics such as surface The charge, doped atom concentration, trap density, and minority carrier survival time are, in one view, the characteristics of the charged carriers (such as carrier survival time, mobility, etc.) taught in the present invention that can be determined in semiconductor materials. 〇 The application of an external electric field to the test strip is also one of the teachings of the present invention. The external electric field subsequently causes a time-dependent change in the carrier distribution. This change is divided into 42 paper standards applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). Mm) (Please read the precautions on the back before filling out this page) --Order-! Ί line, member of the Intellectual Property Bureau of the Ministry of Economic Affairs, consumer cooperation Du printed V ------------------------- Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Invention description () Discount can give more information about the amount to be determined, and the electric field may be added by one or more immediate methods. Referring to FIG. 8A, in the first method, a 'translucent electrode 33a is deposited on the upper end of the test piece, and the electrode 33a has an area of at least the focused excitation and detection beam sizes. In this embodiment, the semiconductor test piece may include Or it is impossible to enclose an oxide layer or other dielectric layer 31b of the charged carriers. In the second method, the translucent electrode 33a is provided close to the surface of the test strip, but it is not actually manufactured on the test strip. For example, the electrode is manufactured on another (transparent) substrate. Then it was contacted with the surface of the test piece. Referring to the eighth B diagram, in the third method-, the electrode 33b of the tapered tip is supported near the surface of the contact test piece in order to sense a known amount of charge on the surface of the insulating layer. When an external electric field is used, several different procedures for performing the measurement are also within the scope of the present invention. This includes, but need not be limited to, the following. (1) A fixed time delay time t between the excitation and the detection, AR⑴ is measured, and when the applied electric field is changed within a suitable range. (2) For a fixed delay time t ′ AR⑴ is measured. When the applied electric field is modulated by a small amount of ΔΕ around the fixed average 値 E0, the derivative function of AR⑴ / dE is measured. (3) For two different applied electric fields E1 and E2, AR (t) is measured as a function of time t. According to the technology disclosed earlier, other measurement systems are familiar with this. 43 This paper size applies the Chinese national standard (CNS > A4 size (210 X 297 mm)) (Please read the precautions on the back before filling this page)

A7 B7 V. Description of Invention () The skill of the man is obvious. The change in the intensity of the laser beam changes the number of excited carriers in the test strip. For each laser beam intensity, the change in the optical reflectance transient can have different function forms. For example, for two different intensity I ! And 12, the measured change in reflectance is relatively ΔΑ⑴ and ^ 仏 ⑴, then the ratio of Δ.I⑴ and Δί12 (ί) is related to the specific time t considered, that is, ΔR, ⑴ and ΔΙ12 (ί) and It does not conform to the relationship of ⑴, where c is a time-independent constant. Therefore, it is advantageous to characterize a test piece more by measuring ⑴ with the intensity or wavelength or wavelength distribution of the sample irradiation as a function. Before the pulse wave is applied, the change in the temperature of the test strip changes the number of carrier appearances, and it will also change the rate at which the carriers are captured. Therefore, ⑴ is corrected by such a change in the temperature of the test strip. Therefore, in some cases, It is possible to perform the measurement as a function of temperature, or to complete all measurements at a specific temperature. This technique allows the measurement to be performed under certain conditions so that the result can be for the specific characteristic that is of most interest (for example The surface charge, doping concentration, trap charge, or minority carrier survival time) are extremely sensitive. In one embodiment of the present invention, the excitation and detection pulses are diverted to different positions on the surface of the test strip. This can be accomplished by applying each set of pulses through different optical fibers, as illustrated in Figure 3A. It is possible to use the embodiment in which the diameter of the tip is reduced in the third figure B. The absorption of the shock pulse causes the generation of charged carriers in the semiconductor material. As mentioned above, by turning to the shock and detecting the pulse, the present invention The system can be used to measure the movement characteristics of charged carriers 'such as mobility' in the direction parallel to the surface of the test piece at the time of measurement 44 < please read the precautions on the back before filling this page). --- Order --------- line. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -nn ff I ϋ I ί I * 1 f-This paper applies the national standard (CNS) A4 (210 X 297 Public Love) 447062 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperation Du V. Invention Description () Inside, the electric field can be applied, and / or the temperature can be changed, and / or the test strip can be Exposure to light, as previously described. According to the teaching of the present invention, a method including the following steps is described to characterize the test strip. The first step is to provide a database of stored data obtained from a group of reference test strips. The data is related to the absorption response of the laser pulse in the semiconductor material portion of each test piece. The absorption of the laser pulse is immediately followed by the detection of the change in the optical constant displayed by the pulse of the light for some time t. The next step provides a specimen of the semiconductor material to be characterized, followed by the absorption of laser pulses in the portion of the semiconductor material to be characterized to generate charged carriers in the semiconductor material. Immediately after the absorption of the laser pulse, the detection of the optical pulse is followed by some time t, which shows that the change in the optical constant has occurred. This method then performs a comparison of the measured change with the stored data and will be characterized based on almost fit. Reference test strips with stored data for measured changes observed in semiconductor material test strips. At least a step of binding, minority carrier trap charge or survival time. Apparatuses and methods for generating at least one transient time-dependent change in the optical constants η and k of the test strip in a region close to the surface of the test strip and possible surface movement have been described in the present invention. These changes cause light Changes in reflectivity AR⑴, phase shift of incident or reflected light by 5 p (t), changes in the polarization state of reflected light, and changes in the direction of incident or reflected light. These changes are also related to the incident angle and polarization of the probe light. Among other things, the measurement change of the test piece to light response and the distribution of traps and the surface near the test piece or the crystal 45 This paper size applies to the Chinese national standard (CNS > A4 specification (210 X 297 mm)) (Please read the (Please note this page and fill in this page again) " Install I I--order ----- line. -N I n ti n I nin-^ 447062 A7 B7 V. Description of the invention The change in the measurement is related to at least one of the concentration of the seed, the form of the seed, the implantation energy, the presence or absence of the seed region, the presence of implant-related damage, and the presence of the electric field. Therefore, referring to its preferred embodiment, The hair Having been specifically shown and described, it should be understood that those skilled in the art can change the form or details thereof without departing from the scope and spirit of the present invention. -----------, > N. 、 install -------- order --------- line-or (please read the precautions on the back before filling this page)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 This paper size applies to the Chinese National Standard < CNS) A4 (210 X 297 mm)

Claims (1)

447062 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 1. A method for characterizing a test strip, the steps include: providing a semiconductor material; applying an electric field to the semiconductor material; absorbing a The laser pulse is in a part of the semiconductor material, and at a certain time point t immediately after the laser pulse is absorbed, the change of the optical constant indicated by the applied detection light pulse is measured; and the measured optical constant is The change is combined with at least one of surface charge, doping concentration, trap density, or minority carrier survival time. 2. The method according to item 1 of the scope of patent application, wherein the step of applying an electric field includes the step of applying an electric field from an electrode deposited to cover the surface of the semiconductor material. 3. The method according to item 1 of the patent application scope, wherein the step of applying an electric field includes the step of applying an electric field from an electrode deposited on the surface of the semiconductor material. 4. A method for characterizing a test strip, the steps of which include: providing a semiconductor material; maintaining the semiconductor material at a predetermined temperature; absorbing a laser pulse in a portion of the semiconductor material, and in the laser pulse At a certain time point t immediately after absorption, measure the change in the optical constant shown by the applied detection light pulse; and change the measured optical constant with at least the surface charge, doping concentration, trap density or minority carrier survival time One of them combined. 5. —A method for characterizing the test piece, the steps of composition include: Provide a semiconductor material; 1 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --- (Please read the back first (Please fill in this page again) ^ = 0 • 衾- 447062 as Bo C8 D8 6. In addition to the scope of patent application, a pulsed or fixed irradiation is applied to the semiconductor material; (Please read the precautions on the back before filling this page) Absorb a laser pulse in a part of the semiconductor material, And at a certain time point t immediately after the laser pulse absorption, measure the change in the optical constant shown by the applied detection light pulse; and at least the measured change in the optical constant and the surface charge, doping concentration, trap density or One of the minority carrier survival times combined. 6. —A method for characterizing a test piece, the steps of composition include: providing a semiconductor material; absorbing a laser pulse in a part of the semiconductor material, wherein the pulse has different intensities, and the measurement is performed by using a laser After the pulse wave is absorbed, the detection light pulse wave is immediately followed by some time t changes in the optical constant; and the measured change of the optical constant is at least the surface charge, doping concentration, trap density or minority carrier survival time. A combination. 7. A method for characterizing a test strip, the steps of which include: providing a semiconductor material; modeling the effect of at least one of an electric field and a deep trap on the movement of charged carriers in the semiconductor material; employees of the Bureau of Intellectual Property, Ministry of Economic Affairs The consumer cooperative prints and absorbs a laser pulse in a part of the semiconductor material to generate charged carriers in the semiconductor material. The measurement is performed by detecting the pulse of the light pulse immediately after the laser pulse is absorbed, as shown in t. Changes in optical constants; Compare the measured changes with the changes predicted by the model; Repeat the model until the changes predicted by the model meet the measured changes; This paper size applies the National Standard (CNS) A4 (210 X 297) (Centi) 447062 as __g 6. The scope of the patent application combines at least one of the change in optical constant measurement with surface charge, doping concentration, trap density, or minority carrier survival time. -----------. 1 r ^ —— C Please read the notes on the back before filling out this page) 8. —A method to characterize the test strip, the steps are as follows: Stored data obtained from reference test strips. For each of a group of reference test strips, the generated data is absorbed by a laser pulse in a portion of each semiconductor material and measured by the laser pulse after absorption. It can be obtained by detecting the pulse of the optical pulse immediately after the change of the optical constant indicated by time t, and providing a test piece of semiconductor material to be characterized. Absorb a laser pulse in a part of the semiconductor material to be characterized. To generate charged carriers in the semiconductor material; to measure the change in the occurrence of the optical constant indicated by the time t after the laser pulse is absorbed, and to detect the change in the optical constant indicated by time t; the measured change and the stored data Compare; and. Line 1 combines the change measured by the optical constant with at least one of surface charge, doping concentration, trap density, or minority carrier survival time, and is consistent with a reference test strip with stored data, which is almost Most of them agree with the measured changes observed in the specimens of the semiconductor material to be characterized. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 9. A method for characterizing test strips, comprising the steps of: providing a semiconductor material; absorbing a laser pulse at the first position of the semiconductor material to generate in the semiconductor material Charged carrier; .Measured by the single laser pulse wave absorption, the single detection light pulse wave is immediately followed by some time t changes in the optical constant shown, the detection light pulse wave is added to the paper standard applicable Chinese National Standards (CNS) A4 specification (210 X 297 mm) v 447 06 2 Printed rhyme C8 DS by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Apply for a patent to the second position of semiconductor materials; and measure the changes in optical constants and semiconductors Mobile binding of charged carriers in a material. 10. A method for characterizing a test strip, the steps of which include: providing a semiconductor material; applying an electric field to at least one surface of the semiconductor material, and absorbing a laser pulse at the first position of the semiconductor material to the semiconductor material. Charged carriers are generated among them; Measure at least one change in light reflectivity AR⑴, phase shift of incident or reflected light < 5 P (t), change in polarization state of reflected light, or change in direction of incident or reflected light, by The detection light pulse is added to one of the first or second positions of the semiconductor material immediately after the absorption of a single laser pulse, followed by a change in the optical constant indicated by some time t; and A change in at least one of reflectance, phase, polarization state, or direction is measured in combination with at least one of charge mobility, surface charge of a semiconductor material, doping concentration, trap density, or minority carrier survival time. Π. The method of claim 10, wherein the step of applying an electric field includes the step of applying an electric field from an electrode deposited to cover the surface of the semiconductor material. 12. The method of claim 10, wherein the step of applying an electric field includes the step of applying an electric field from an electrode deposited on the surface of the semiconductor material. Π.—A method for characterizing test strips, the steps of which consist of: Provide a semiconductor material containing a PN junction; 4 (Please read the precautions on the back before filling out this page) Binding.-Line one paper size applies China National Standard (CNS) A4 specification (210 X 297 mm) 447062 § VI. Patent application scope At least one effect of electric field movement of charged carriers in semiconductor materials and at least one of the optical response of charged carriers in semiconductor materials Effect modeling; absorption of a laser pulse at the first position of the semiconductor material to generate charged carriers in the semiconductor material; measurement of at least one change in the optical response of the semiconductor material, including at least one change in optical reflectance AR⑴, incident or reflected light The phase shift is 5 p (t), the change of the polarization state of the reflected light, or the change of the direction of the incident or reflected light is shown by the absorption of a single laser pulse, and the pulse of the single detection light is immediately followed by some time t. The change of the optical constant, the detection light pulse is added to one of the first or second positions of the semiconductor material; the reflectivity, Compare at least one measured change in phase, polarization, or direction with the change predicted by the model; repeat the model until the change predicted by the model matches the measured change; and combine at least one PN with the measured change in the optical response Surface characteristics. 14. The method according to item B of the scope of patent application, wherein at least one of the PN junctions is characterized by having electrically active doped atoms. 15. The method according to item 13 of the scope of patent application, wherein the characteristic of at least one PN junction is the doped atom distribution. 16. The method according to item 13 of the patent application, wherein the characteristic of at least one PN junction is the doping atom concentration. Π. The method described in item 13 of the scope of patent application, of which at least one 5 (please read the precautions on the back before filling this page) LSJ · Printed by the Intellectual Property Bureau of the Ministry of Online Economics and Consumer Cooperatives This paper is applicable to China Standard (CNS) A4 specification (210 X 297 mm) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, fe 447062 6. Application for patents The characteristic of each PN junction is the width of the PN junction metal junction. 18. The method according to item 13 of the patent application, wherein the characteristic of at least one PN junction is the dielectric constant of the semiconductor material. 19. The method described in item 13 of the patent application, wherein the step of modeling the electric field effect model is due to the doped atom distribution in the semiconductor material. 20. The method described in item 13 of the patent application, where the electric field effect The step of model modeling is due to a charged trap in a semiconductor material ^ 21. The method as described in item 13 of the scope of patent application, wherein the step of modeling the electric field effect is due to the deposition of a surface oxide layer covering the surface of the semiconductor material Of charge. 22. The method according to item 13 of the patent application, wherein at least one effect of the diffusion rate and the charged carrier binding rate is another model modeling step. 23. The method according to item 13 of the patent application, wherein the step of combining the measured change in the optical response includes the step of measuring the change related to at least one of the minority carrier survival time or the surface recombination rate, and the minority carrier survival time or The surface recombination rate is another step related to the doping atom concentration or trap concentration in the semiconductor material. 24. The method according to item 13 of the scope of patent application, wherein the steps of absorbing and measuring each step include a step of simultaneously applying an external electric field to the semiconductor material. 25. The method as described in item 13 of the scope of patent application, wherein the steps of absorbing and measuring each step include a step of simultaneously irradiating to the semiconductor material 6 ----- 1llll (lr --- (Please read the Note: Please fill in this page again.) Order--The paper size of the paper is applicable to the Chinese national standard (CNS > A4 specification (210 X 297 mm) 447 062 as __D8 VI. Application scope of patents ο 26. Such as the scope of patent application No. 13 The method described above, wherein the steps of absorbing and measuring each include a step of varying the temperature of the semiconductor material at the same time. 27. A method of characterizing a test strip, the steps of which include: providing a semiconductor material; applying an electric field to the semiconductor material; Absorb a laser pulse in a part of the semiconductor material and measure the change in the optical constant indicated by the optical pulse immediately after some time t after the laser pulse is absorbed; and at least the measured change combined with the optical constant And charge density, doped atom concentration, trap density, or charged carrier characteristics of the test strip; where the step of applying an electric field is included in the range of the region 値A step of changing one of the magnitudes of the applied electric field, using a predetermined chirp modulation to change the magnitude of the applied electric field, or applying a different number of times, two or more electric fields of different sizes. 28. The method described in item 27 of the scope of patent application Wherein the step of applying an electric field includes the step of applying an electric field from an electrode that covers the surface of the semiconductor material by deposition. 29. The method according to item 27 of the patent application scope, wherein the step of applying an electric field includes depositing from the surface of the semiconductor material by A step of applying an electric field to the electrodes on the electrode 30. — A method for characterizing the test strip, the composition steps include: providing a test strip composed of a semiconductor material; adding a group of laser pulses to the surface area of the test strip to make constructive And cracking interference, which was caused by the absorption of a group of laser pulses. In this test, the paper size of this paper applies the Chinese National Standard < CNS) A4 specification (210 X 297 mm) ---------- --- t Pack --- (Please read the notes on the back before filling out this page) Order --- line. The Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperative, printed the intellectual property of the Ministry of Economic Affairs Printed by Employee Consumer Cooperatives> 447062 as _§_ VI. Changes in the density of charged carriers in the patent application film Absorb a laser pulse in a part of the semiconductor material and measure by detecting after the laser pulse is absorbed, The light pulse is immediately followed by a change in the optical constant shown at some time t; and the change measured in combination with the optical constant is at least one of the amount of charge, the doping atom concentration, the trap density, or the charged carrier characteristics of the test piece. 31. The method of claim 30, wherein the steps of absorbing and measuring each step include a step of simultaneously applying an external electric field to the semiconductor material. 32. The method according to item 30 of the patent application, wherein the steps of absorbing and measuring each include a step of simultaneously applying irradiation to the semiconductor material. 33. The method according to item 30 of the patent application, wherein absorbing The steps of measuring and measuring each include a step of simultaneously changing the temperature of the semiconductor material. 34. A system for characterizing test strips, including: a test strip platform for supporting when measuring; a test strip composed of semiconductor materials; a first light source for applying a group of laser pulses to the surface of the test strip The second light source is used to add a group of detection light pulses to the same or different areas on the surface of the test strip; the mechanism is used to modify at least ~ one of the test strip's temperature, irradiation status or charging status when measuring; And at least one detector and a data processor for measuring by laser 8 ------------- L installed-(Please read the precautions on the back before filling this page) Order-line One paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 6. Scope of patent application ------------- r- · " ^ --- (please first Read the notes on the back and fill in this page again.) After the pulse wave absorption, detect the pulse of the light pulse and add some time t to the change in the optical constant of the test strip, and the change measured by combining the optical constant with at least the charge, Heteroatom concentration, trap density, or charged carrier characteristics of the test strip35. The system according to item 34 of the scope of patent application, wherein the first light source is operated so as to simultaneously provide a group of laser pulses to the test strip area to cause constructive and destructive interference, so because a group of lasers Pulse wave absorption causes changes in the charge carrier density in the test strip. 36. The system described in claim 34, wherein the same or different data processors are operated to move the electric field in the semiconductor material by at least one effect and the charge carrier in the semiconductor material optical response by at least one effect Modeling. 37. The system of claim 34, wherein the detector and data processor are operated to measure at least one change in the optical response of the semiconductor material, including at least one change in the light reflectance ΔR⑴ , Phase shift of incident or reflected light < 5 P (t), change of polarized state of reflected light, or change of incident or reflected light direction, through single laser pulse wave absorption The bureau's consumer cooperative printed the photometric pulse wave immediately followed by some changes in the optical constant shown at time t. The “detection light pulse wave” was added to one of the first or second positions of the semiconductor material. The system according to item 34, wherein the semiconductor material includes a PN junction, and wherein the same or different data processors are operated to move the electric field in the semiconductor material by at least one effect and the charged carrier in the semiconductor material. Optical response at least one effect is modeled 'This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm), 447062 A8 B8 C8 D8 Patent scope (please read the notes on the back before filling this page) Detector and data processor are operated to measure at least one change in optical response of semiconductor material, including at least one change in light reflectance AR⑴, incident or reflected light phase The deviation of 5 p (t) is the change of the polarization state of the reflected light, or the direction of the incident or reflected light. After the absorption of a single laser pulse, the single detection pulse is immediately followed by some time t. Shows the change of the optical constant, the detection light pulse is added to one of the first or second positions of the semiconductor material, and the data processor is further operated to change the reflectance, phase, polarization state or direction At least one measured change is compared with the change predicted by the model, and the model is repeated until the change predicted by the model matches the measured change, combined with the measured change in the optical response and at least one characteristic of the PN interface. 39. The system according to item 38 of the scope of patent application, wherein the characteristics of at least one PN junction is that it has electrically active doped atoms, doped atom distribution, doped atom concentration, and PN junction metal junction width; or Dielectric constant of semiconductor materials. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 40. The system described in item 34 of the patent application scope, wherein the data processor is further operated to at least one effect of an electric field caused by the distribution of doped atoms in the semiconductor material, The effects of the electric field caused by the charged traps in the semiconductor material, the effects of the electric field caused by the charges in the oxide layer deposited on the surface of the semiconductor material, and the effects of at least one of the diffusion rate and the charge carrier recombination rate are modeled. 41. The system of claim 34, wherein the data processor combines the measured change with at least one of the minority carrier survival time or surface recombination rate, and later combines the minority carrier survival time or surface 10 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 447062 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of patent application compounding rate and doping atom concentration in semiconductor materials Or trap concentration to make a correlation ------------., Gas -------- order --------- line I (Please read the precautions on the back before filling (This page) This paper is sized for China National Standard (CNS) A4 (210 X 297 mm)