CN117890751A - Semiconductor material heterogeneous interface thermal resistance detection method based on laser reflectivity - Google Patents
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Abstract
The invention discloses a method for measuring interface temperature rise and thermal resistance of a heterojunction device, which comprises a detection laser, a heating laser, a reflecting mirror, a convex lens, a spectroscope, an optical filter and a photoelectric conversion circuit to form a laser heat reflection system, and the laser heat reflection system is interacted with an upper computer. And etching the to-be-detected points on the surface of the sample to form rectangular arrays with the same size and uniform distribution, wherein the etching depth exceeds that of the heterogeneous interface layer, and the rectangular area is ensured to be the heat flow passing area heated by laser. The device to be measured is fixed on a constant temperature platform, detection laser irradiates the position to be measured of the sample, the temperature of the constant temperature platform is changed, and the relation between the detection laser reflectivity and the temperature of the device at different temperatures is measured through a photoelectric conversion circuit. And (3) keeping the temperature of the constant-temperature platform constant, opening the heating laser, collecting the output voltage change of the photoelectric conversion circuit by the collecting card, and obtaining a transient temperature rise curve of the device reflectivity changing along with the heating time caused by temperature rise after the temperature of the device is stable, and obtaining the thin-layer heterogeneous interface thermal resistance through processing by a structural function method.
Description
Technical Field
The invention relates to the field of semiconductor device testing, in particular to a method for detecting heterogeneous interface thermal resistance of a semiconductor material based on laser reflectivity, which is mainly applied to measurement and analysis of interface temperature rise and thermal resistance of the semiconductor material.
Background
Thermal management is particularly important in device design and performance enhancement, and the effect of interfacial thermal resistance on heat transfer has become a major factor affecting chip heat dissipation, and it has been reported that on diamond devices, the interfacial thermal resistance between gallium nitride and diamond can account for 40% of the total thermal resistance of gallium nitride, which severely limits the peak power density of the device. The heterogeneous material interface has many nucleating layers and high concentration defects, which results in reduced heat transfer efficiency, and the epitaxial layer has thin thickness, only several microns, small thermal time constant, temperature jump, and high temperature effect. Therefore, it is important to precisely measure the interfacial temperature rise and thermal resistance of heterogeneous materials.
In the common semiconductor temperature measurement method, the infrared thermal imaging method is simple and quick in test, can intuitively show the surface temperature rise of the material, but cannot measure the temperature rise between interfaces; the time resolution of the Raman spectroscopy and the laser thermal reflection method can reach hundred nanoseconds, and particularly the laser thermal reflection method can achieve the time resolution of 10ns at the highest, and can meet the temperature measurement requirement of a thin-layer heterogeneous interface. However, the two methods can only measure the temperature of a single-layer interface, are difficult to measure each layer of interface on a heat flow path, and have the defects of expensive equipment and complex operation; compared with the optical measurement method, the temperature-sensitive electrical parameter method has the time resolution of 100ns, can well measure the longitudinal interface thermal resistance of the device, but also has the problem that only the average temperature rise of a material interface can be measured.
In the existing heat reflection system, the transient temperature measurement with high time resolution is obtained by orderly controlling the light pulse emitted by the LED, the exposure time of the CCD camera and the moment when the device starts to be heated. But the device temperature is heated to a steady state, which process takes tens of seconds or even hundreds of seconds. The heat reflection temperature measuring instrument is used for measuring, the device is required to be circularly heated for multiple times, the measuring time is prolonged, the degradation of the device can be caused by multiple temperature changes, and the inaccuracy of data is caused. Therefore, the invention designs a temperature measuring system based on laser reflectivity, which is more suitable for measuring interface thermal resistance and transient temperature thereof, and the transient temperature rise curve measured by the device is processed by a structure function method, so that each interface thermal resistance composition on a longitudinal heat flow path of the device can be obtained.
Disclosure of Invention
In the heterogeneous interface temperature transmission process, not only longitudinal conduction exists, but also temperature transverse conduction exists, in order to avoid the problem of transverse heat flow propagation during measurement of an interface transient temperature rise curve as much as possible, a rectangular array with small enough area and uniform distribution is etched on the surface of a material, the etching depth exceeds that of an interface layer, the rectangular column is used as a to-be-measured point, heating laser is controlled to ensure that light spots are completely irradiated on the material, and at the moment, the interface heat flow is approximately transmitted longitudinally; the positions of the heating points of different devices are different, and for devices with the heating points inside, heat flow is conducted to the bottom of the device and is conducted to the surface of the device, so that interface temperature rise is lower than a true value. The measuring method uses an upper computer to control a laser to heat the material, so as to replace the application of electrical bias to the device, and heat flow can be directly transmitted to the bottom from the surface of the device. The laser device is heated, so that the device is prevented from being electrically biased to be converted into a test state, delay is generated by switching of test current, and the problem of self-heating of the device during power-up test is avoided.
The invention can be used for measuring the multi-layer interface thermal resistance of various heterogeneous semiconductor devices by replacing the detection light source and the heating light source, has accurate testing method, and can be used in the fields of device reliability testing, performance research and development.
The technical scheme of the invention is as follows:
The device for measuring the temperature rise and the interface thermal resistance of the heterogeneous semiconductor material comprises a host computer 1, a laser driver 2, a detection laser 3, a narrow-band optical filter 4, a convex lens 5, a heating laser 6, a narrow-band optical filter 7, a convex lens 8, a reflecting mirror 9, polarization splitting prisms 10 and 11, a convex lens 12, a device to be measured 13, a constant temperature platform 14, a three-dimensional displacement platform 15, a narrow-band optical filter 16, a convex lens 17 and a photoelectric conversion circuit 18; laser is focused on a device to-be-measured point through each lens along a light path, reflected light is received by a photoelectric conversion circuit 18 through a polarization beam splitter prism 10, a series of temperatures of a constant temperature platform 14 are set to obtain the relation between the device temperature and the reflectivity, the device to be measured 13 is heated to a steady state through a heating laser 6, a transient temperature rise curve is acquired, and data is input into a thermal resistance instrument or a structural function processing software to obtain the heterogeneous interface temperature rise and thermal resistance of the device;
specifically, firstly, etching the surface of the device 13 to be tested into a rectangular array with equal size and uniformity, wherein the etching depth exceeds that of the interface layer, so that the heat flow is ensured to be approximately transmitted longitudinally, and the rectangular column is used as a point to be tested of interface thermal resistance; (here, how to specially process the device) the upper computer 1 controls the on/off of the detection laser 3 and the heating laser 6 by controlling the laser drive 2; the detection laser wavelength is not in the absorption spectrum of the material to be detected, the power is low, the device temperature is not increased, the heating laser wavelength is in the absorption spectrum of the material to be detected, the power is high, and the device to be detected is heated; the detection laser 3 and the heating laser 6 passing through the reflector 9 are focused into parallel light through the first convex lens 4 and the second convex lens 7, then pass through the first narrow-band filter 5 and the second narrow-band filter 8 corresponding to the wavelength of the detection laser 3 and the heating laser 6, synthesize coaxial laser by the first polarization splitting prism 10 and the second polarization splitting prism 11, and then are focused on the rectangular column position of the device 13 to be detected through the convex lens 12; the device 13 to be measured is arranged on a constant temperature platform 14 and a three-dimensional displacement platform 15, and the three-dimensional displacement platform 15 is adjusted to focus light beams on a device point to be measured through a convex lens 12; the laser reflected light irradiated to the device to be tested 13 passes through the polarization beam splitting prisms 11 and 10 again along the same path, the reflected light which is separated by the polarization beam splitting prism 10 and is perpendicular to the path of the detection laser passes through the narrow-band filter 16 with the same wavelength as the detection laser, the heating laser is filtered, and then the heating laser is focused on the photoelectric conversion circuit 18 by the convex lens 17, and the photoelectric conversion circuit 18 is responsible for measuring the change of the reflectivity of the material along with the temperature; the voltage signal output by the photoelectric conversion circuit 18 is received by the acquisition card of the upper computer 1; the upper computer 1 calculates the temperature rise and the thermal resistance of the heterogeneous interface of the device through specific thermal resistance test software and structural function processing software.
The method for measuring the temperature rise and the interface thermal resistance of the heterogeneous semiconductor material by using the device comprises the following steps:
1) Selecting a device to be tested, and etching the surface after opening the cap, wherein the main purpose is as follows:
from the theory of thermal conduction, TBR eff can be derived:
Wherein TBR eff is effective interface thermal resistance in the sample, deltaT is temperature rise at the interface, P H/SHeat is heat flux density passing through the interface, and R th_TBR is interface thermal resistance extracted from a transient temperature response curve by a traditional structural function method. As can be seen from the equation, at the same TBR eff, the value of R th_TBR increases with decreasing heat flow effective area. Thus, to maximize the ratio of R th_TBR throughout the transient temperature curve, the sample surface is etched with a uniformly sized rectangular array. In particular, the etching depth exceeds the interface layer, and the heat flow area passing through the interface is ensured to be equal to the contact area, so that the heating laser can perform approximately one-dimensional longitudinal heating on the interface.
2) The photoelectric conversion circuit is designed as a detection laser acquisition circuit and mainly comprises a photodiode and a transimpedance amplification circuit, and the main principle is as follows:
the relationship between the reflectivity of the semiconductor material and the temperature can be approximated as:
Wherein, deltaR is the change of the reflectivity of the material, deltaT is the change of the temperature of the material, C th is the heat reflection coefficient, which is related to the performance of the material and can be regarded as constant; the photo-diode photocurrent I PD changes along with the incident light reflectivity delta R, the relation between the photo-diode photocurrent I PD and the material Wen Sheng T can be obtained by a formula, then the current quantity I PD is converted into a processable voltage quantity V PD by a transimpedance amplifying circuit, and the corresponding relation between the material reflectivity and the temperature rise of the material is acquired;
3) In order to determine the real heating power of the device, a laser power meter detection lens is firstly placed at the position of the device to be detected, heating laser is turned on, and the laser power P L at the position is measured; the transmissivity of the surface of the device to be tested to the heating laser is v, the heating power of the device to be tested is finally obtained, P H＝PL & v is obtained, and the heating laser is turned off.
4) After the heating power is determined, fixing the processed device to be tested on a constant temperature platform, and coating heat conduction silicone grease on the back of the device to enable the device to be fully contacted with the constant temperature platform, wherein the temperature of the constant temperature platform is set to be T0 through an upper computer;
5) After the temperature of the constant temperature platform is stable, the upper computer controls the laser to drive and turn on the detection laser, and adjusts the three-dimensional displacement platform to irradiate light beams on the rectangular column of the device; the detection laser reflected by the device is received by the photoelectric conversion circuit and then collected by the upper computer collection card;
6) When the temperature T0 of the constant temperature platform is acquired, the output voltage V0 of the photoelectric conversion circuit is acquired;
7) The upper computer controls the laser to drive and turn on the heating laser, focuses on the same irradiation position of the detection light source, starts the heating light source to heat the device, and simultaneously controls the acquisition card to start to acquire the output voltage V (t) of the photoelectric conversion circuit; when the device is continuously heated to reach a steady state, and V (t) is not changed along with the heating time, the upper computer controls the laser to drive and close the heating light source; obtaining a curve delta V (t) =V (t) -V0 of the change of the reflectivity of the heterogeneous interface of the device along with the change of heating time;
8) Setting a series of temperatures, such as T1, T2, & gt, tn, and collecting output voltages V1, V2 of the photoelectric conversion circuit under the corresponding temperatures by the acquisition card, wherein the temperature coefficient alpha = delta V/delta T of a to-be-measured point of the device to be measured is calculated by the constant temperature platform;
9) Obtaining a heterogeneous interface transient temperature rise curve delta T (T) = (V (T) -V0)/alpha of the device to be tested; the transient thermal resistance is R th_TBR(t)＝ΔT(t)/PH according to the definition of the thermal resistance, and the thermal resistance composition on the heat flow path at the test point can be obtained by utilizing a structural function processing method; the data is brought into a thermal resistance tester or a structural function processing software, so that the temperature rise at a device test point and the thermal resistance composition on a heat flow path can be obtained;
The semiconductor material heterogeneous interface thermal resistance measuring equipment based on the laser reflectivity can be used for measuring various heterogeneous interface thermal resistances by replacing detection laser and heating laser. The device realizes one-time online measurement, and avoids the problem of heating the device for many times in the measurement process of the traditional heat reflection measurement system. In addition, the laser is used for heating the device to replace the application of the electrical bias to the device, so that the time error generated by switching the device between the working state and the testing state can be avoided, the time resolution of equipment is improved, the problem of self-heating of the device possibly generated by applying the testing current to the device can be avoided, and the measurement error is reduced. And finally, etching the surface of the device to be measured into a rectangular array with equal size and uniform etching depth exceeding the interface layer, taking the rectangular column as a point to be measured of interface thermal resistance, ensuring the approximate longitudinal transmission of heat flow, and avoiding the measurement error caused by the transverse transmission of the heat flow during thermal resistance measurement.
The invention obtains higher time-space resolution, and the testing method is accurate, and can be used in the fields of device reliability testing, performance research and development.
Drawings
FIG. 1 is a schematic diagram of a testing apparatus of the present invention.
Fig. 2 is a plan view of a processed device.
Fig. 3 is a schematic diagram of a photoelectric conversion circuit.
FIG. 4 is a graph showing the relationship between reflectivity and temperature.
Fig. 5 is a schematic diagram of a transient temperature rise curve.
FIG. 6 shows the interface thermal resistance after processing by the structure function.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples.
The device for measuring the temperature rise and the interface thermal resistance of the heterogeneous semiconductor material comprises a host computer 1, a laser driver 2, a detection laser 3, a narrow-band optical filter 4, a convex lens 5, a heating laser 6, a narrow-band optical filter 7, a convex lens 8, a reflecting mirror 9, polarization splitting prisms 10 and 11, a convex lens 12, a device to be measured 13, a constant temperature platform 14, a three-dimensional displacement platform 15, a narrow-band optical filter 16, a convex lens 17 and a photoelectric conversion circuit 18; laser is focused on a device to-be-measured point through each lens along a light path, reflected light is received by a photoelectric conversion circuit 18 through a polarization beam splitter prism 10, a series of temperatures of a constant temperature platform 14 are set to obtain the relation between the device temperature and the reflectivity, the device to be measured 13 is heated to a steady state through a heating laser 6, a transient temperature rise curve is acquired, and data is input into a thermal resistance instrument or a structural function processing software to obtain the heterogeneous interface temperature rise and thermal resistance of the device;
Specifically, the upper computer 1 controls the on/off of the detection laser 3 and the heating laser 6 by controlling the laser drive 2; the detection laser wavelength is not in the absorption spectrum of the material to be detected, the power is low, the device temperature is not increased, the heating laser wavelength is in the absorption spectrum of the material to be detected, the power is high, and the device to be detected is heated; the detection laser 3 and the heating laser 6 passing through the reflecting mirror 9 are focused into parallel light through the first convex lens 4 and the second convex lens 7, and then pass through the first narrow-band filter 5 and the second narrow-band filter 8 corresponding to the wavelength of the detection laser 3 and the heating laser 6, the coaxial laser is synthesized by the polarization beam splitter prism 10 and the second polarization beam splitter prism 11, and then focused on the position to be measured of the device to be measured 13 through the convex lens 12; the device 13 to be measured is arranged on a constant temperature platform 14 and a three-dimensional displacement platform 15, and the three-dimensional displacement platform 15 is adjusted to focus light beams on a device point to be measured through a convex lens 12; the laser reflected light irradiated to the device to be tested 13 passes through the polarization beam splitter prism 10 again along the same path, is perpendicular to the reflected light of the detection laser path, passes through the narrow-band filter 16 with the same wavelength as the detection laser, filters out heating laser, is focused on the photoelectric conversion circuit 18 by the convex lens 17, and the photoelectric conversion circuit 18 is responsible for measuring the change of the reflectivity of the material along with the temperature; the voltage signal output by the photoelectric conversion circuit 18 is received by the acquisition card of the upper computer 1; the upper computer 1 calculates the temperature rise and the thermal resistance of the heterogeneous interface of the device through specific thermal resistance test software and structural function processing software.
Firstly, the device is preprocessed, the device is capped, and rectangular arrays with the same size and uniform distribution are etched on the surface of the device sample, as shown in fig. 2.
Determining heating power of a device to be tested, placing a laser power meter detection lens at the position of the device to be tested, opening heating laser, and measuring laser power P L; the transmissivity of the surface of the device to be tested to the heating laser is v, the heating power of the device to be tested is finally obtained, P H＝PL & v is obtained, and the heating laser is turned off.
After heating power is determined, the back of the device to be measured is smeared with heat-conducting silicone grease and is fixed on a constant temperature platform, so that the device can be fully heated, and the temperature of the constant temperature platform is set to be T0 through an upper computer.
After the temperature of the constant temperature platform is stable, the upper computer controls the laser to drive and open the detection laser, the three-dimensional displacement platform is adjusted to irradiate the light beam on the device to-be-detected point, the detection laser reflected by the device is received by the photoelectric conversion circuit, and the data are collected by the 500MHz collection card of the upper computer. The photoelectric conversion circuit is shown in fig. 3.
When the temperature T0 of the constant temperature collection platform is set, the output voltage of the photoelectric conversion circuit is V0.
The upper computer controls the laser to drive and turn on the heating laser, focuses on the irradiation same position of the detection light source, and starts the heating light source and simultaneously controls the acquisition card to start to acquire the output voltage V (t) of the photoelectric conversion circuit. When the device is continuously heated to reach a steady state, and V (t) is not changed along with the heating time, the upper computer controls the laser to drive and close the heating light source; a curve Δv (t) =v (t) -V0 of the temperature of the device hetero-interface as a function of the laser reflectivity is obtained.
The upper computer controls the constant temperature platform to set a series of temperatures, such as T1, T2, & gt, tn, and the acquisition card acquires output voltages V1, V2, & gt, vn of the photoelectric conversion circuit under the corresponding temperatures, wherein the acquired voltages have a linear relation with the temperatures, and the temperature coefficient alpha=delta V/delta T of the test point of the device to be tested is calculated. The results are shown in FIG. 4.
Thus obtaining a heterogeneous interface transient temperature rise curve delta T (T) = (V (T) -V0)/alpha of the device to be tested, as shown in FIG. 5;
The transient thermal resistance is Rth (T) =DeltaT (T)/P H according to the definition of thermal resistance, and the temperature rise at the device test point and the thermal resistance composition on the heat flow path can be obtained by introducing data into a ANALYSIS TECH company Phase11 commercial thermal resistance tester, as shown in FIG. 6;
By changing the detection laser wavelength, the irradiation point position, the heating laser wavelength and the power, heterogeneous interfaces of different materials can be obtained, and the temperature rise and the thermal resistance under different positions and different working conditions can be formed.
Claims (2)
1. A device for measuring temperature rise and interface thermal resistance of heterogeneous semiconductor materials is characterized by comprising the following steps:
The upper computer is driven by the control laser to control the on/off of the detection laser and the heating laser; the detection laser wavelength is not in the absorption spectrum of the material to be detected and has low power, the temperature of the device is not increased, the heating laser wavelength is in the absorption spectrum of the material to be detected and has higher power, and the device to be detected is heated; the detection laser and the heating laser passing through the reflector pass through the convex lens, the divergent light is focused into parallel light, then the parallel light passes through the narrow-band filter corresponding to the wavelength of the two lasers, the coaxial laser is synthesized by the polarization beam splitter prism, and then the coaxial laser passes through the convex lens and is focused on the position to be tested of the device to be tested; etching a rectangular array with uniform size on the surface of the device to be measured as a measuring point to be measured; placing the device to be tested on a constant temperature platform and a three-dimensional displacement platform, and adjusting the three-dimensional displacement platform to focus light beams on a device to be tested point through a convex lens; the laser reflected light irradiated to the device passes through the polarization beam splitter prism again along the same path, the reflected light which is separated by the polarization beam splitter prism and is perpendicular to the detection laser path passes through a narrow-band filter with the same wavelength as the detection laser, the heating laser is filtered, then the heating laser is focused on a photoelectric conversion circuit by a convex lens, and the photoelectric conversion circuit is responsible for measuring the change of the reflectivity of a material along with the temperature; the voltage signal output by the photoelectric conversion circuit is received by an upper computer acquisition card; and the upper computer calculates the temperature rise and the thermal resistance of the heterogeneous interface of the device through specific thermal resistance test software and structural function processing software.
2. A method of measuring temperature rise and interfacial thermal resistance of a dissimilar semiconductor material using the apparatus of claim 1, comprising the steps of:
1) Selecting a device to be tested, and etching the surface after opening the cap, wherein the main purpose is as follows:
From the theory of thermal conduction, TBR eff can be derived:
Wherein TBReff is effective interface thermal resistance in the sample, deltaT is temperature rise at the interface, P H/SHeat is heat flow density passing through the interface, and R th_TBR is interface thermal resistance extracted from a transient temperature response curve by a traditional structural function method; as can be seen from the formula, at the same TBR eff, the value of R th_TBR increases with decreasing heat flow effective area; in order to furthest improve the proportion of R th_TBR in the whole transient temperature curve, the surface of the sample adopts rectangular arrays with the same size and uniform distribution; the etching depth exceeds the interface layer, so that the heat flow area passing through the interface is ensured to be equal to the contact area, and the heating laser carries out approximate one-dimensional longitudinal heating on the interface;
2) The laser has loss through the optical power of each lens, in order to determine the real heating power of the device, a laser power meter detection lens is firstly placed at the position of the device to be detected, heating laser is turned on, and the laser power P L at the position is measured; the transmissivity of the surface of the device to be tested to the heating laser is v, the heating power of the device to be tested can be finally obtained, P H＝PL & v is achieved, and the heating laser is turned off;
3) The photoelectric conversion circuit mainly comprises a photodiode and a transimpedance amplifying circuit, and the main principle is as follows:
The relationship between the reflectivity of the semiconductor material and the temperature is approximately:
wherein DeltaR is the material reflectivity variation, deltaT is the material temperature variation, and C th is the thermal reflection coefficient; the photo-diode photocurrent I PD changes along with the incident light reflectivity R to obtain the relation between the photo-diode photocurrent and the temperature rise of the material, then the current quantity is converted into a processable voltage quantity V PD through a trans-impedance amplifying circuit, and the corresponding relation between the material reflectivity and the temperature rise of the material is acquired;
4) After the heating power is determined, fixing the processed device to be tested on a constant temperature platform, and coating heat conduction silicone grease on the back of the device to enable the device to be fully contacted with the constant temperature platform, wherein the temperature of the constant temperature platform is set to be T0 through an upper computer;
5) After the temperature of the constant temperature platform is stable, the upper computer controls the laser to drive and turn on the detection laser, and adjusts the three-dimensional displacement platform to irradiate light beams on the rectangular column of the device; the detection laser reflected by the device is received by the photoelectric conversion circuit and then collected by the upper computer collection card;
6) When the temperature T0 of the constant temperature platform is acquired, the output voltage V0 of the photoelectric conversion circuit is acquired;
7) The upper computer controls the laser to drive and turn on the heating laser, focuses on the same irradiation position of the detection light source, starts the heating light source to heat the device, and simultaneously controls the acquisition card to start to acquire the output voltage V (t) of the photoelectric conversion circuit; when the device is continuously heated to reach a steady state, and V (t) is not changed along with the heating time, the upper computer controls the laser to drive and close the heating light source; obtaining a curve delta V (t) =V (t) -V0 of the change of the reflectivity of the heterogeneous interface of the device along with the change of heating time;
8) Setting a series of temperatures T1, T2, & gt, tn, and collecting output voltages V1, V2, & gt, vn of the photoelectric conversion circuit under corresponding temperatures by an acquisition card, and calculating a temperature coefficient alpha = delta V/delta T of a to-be-measured point of the device to be measured;
9) Obtaining a heterogeneous interface transient temperature rise curve delta T (T) = (V (T) -V0)/alpha of the device to be tested; the transient thermal resistance is R th_TBR(t)＝ΔT(t)/PH according to the definition of the thermal resistance, and the temperature rise at the device test point and the thermal resistance composition on the heat flow path can be obtained by bringing data into a thermal resistance tester or a structural function processing software.
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| CN202410086929.4A CN117890751A (en) | 2024-01-22 | 2024-01-22 | Semiconductor material heterogeneous interface thermal resistance detection method based on laser reflectivity |
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