CN105136310A - Ultraviolet temperature measuring method and apparatus for MOCVD epitaxial wafer surface temperature measurement - Google Patents
Ultraviolet temperature measuring method and apparatus for MOCVD epitaxial wafer surface temperature measurement Download PDFInfo
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Abstract
An ultraviolet temperature measuring method applied to MOCVD epitaxial wafer surface temperature measurement, which belongs to the technical field of non-contact ultraviolet temperature measurement. Firstly, the thermal radiation signal intensity of an object to be measured under the selected wavelength is measured; based on the output response of a photoelectric detector, the sub-measuring range is regulated; secondly, based on the current sub-measuring range of the above step, the light source intensity matched with the gain stall of the photoelectric detector is selected; the reflectivity is measured to further acquire the emissivity; and based on the emissivity acquired in the above step, the emissivity of the measured thermal radiation signal intensity is rectified to acquire the accurate temperature of the surface of the object to be measured. According to the invention, by measuring the thermal radiation of the ultraviolet band and rectifying the emissivity, the surface temperature of the object is measured and the acquired temperature is accurate; and by adopting the single wavelength temperature measuring technology, the photoelectric response gain of the photoelectric detector and the light source intensity can be automatically regulated, thus realizing the temperature measurement with large measuring range and high accuracy.
Description
Technical field
The invention belongs to noncontact ultraviolet technical field of temperature measurement, be specifically related to measuring method and device that one is applied in epitaxial wafer surface true temperature in the growth of metal organic chemical vapor deposition system (MOCVD) technique.
Background technology
In the growth course of semiconductive thin film, surface temperature is the important parameter determining film quality quality, and it affects the quality of the thickness of film surface, angularity and the growth of surface quantum trap.At present, industrial batch production semiconductive thin film adopts MOCVD (metal organic chemical vapor deposition) mostly, therefore, has great importance in MOCVD to the accurate Detection & Controling of film surface temperature.
At present, in MOCVD, the measurement of film surface temperature adopts infrared thermometer mostly, but along with the development of semiconductor industry, infrared thermometer can not meet the surface temperature measurement of part new material, especially to the material of infrared transparent, as materials such as sapphire, gallium nitride, silit.And in semiconductor lighting industry, mostly adopt the materials such as graphical sapphire substrate epitaxial nitride gallium, indium gallium nitrogen, therefore, infrared measurement of temperature can not meet the demand of application at present.
Because the materials such as sapphire, gallium nitride, silit are opaque to ultraviolet, ultraviolet therefore can be adopted to measure its temperature.But because ultraviolet band heat radiation is substantially weaker than infrared band, bring very large difficulty to ultraviolet hot radiation measurement; Secondly the caloradiance of the single wavelength in ultraviolet region varies with temperature quickly, and the caloradiance as object 405nm place at 600 DEG C and 1190 DEG C differs more than 7 orders of magnitude, and along with wavelength shortens, this gap also can increase.And the caloradiance in infrared region as 1 μm of place only differs 3 orders of magnitude; 2 μm are in 40 times that caloradiance at 1190 DEG C is about at 600 DEG C, only differ from an order of magnitude.
In order to widen measurement range, realize the wide range of Infrared survey instrument, usually two kinds of methods are had: one adopts middle infrared wavelength, the caloradiance change relative equilibrium at each temperature of this wave band, radiation intensity difference is substantially within 2 orders of magnitude at different temperatures, select suitable photodetector and analog to digital conversion circuit, the measurement to each warm area in temperature range can be realized; Simultaneously another kind adopts different wave length thermometric, and time as too low in temperature, adopt the temperature measurement module that wavelength is longer, along with temperature raises, longer wavelength energy adopts comparatively small wavelength module to carry out temperature survey after exceeding testing range; Testing range is widened by multiple temperature measurement module.The first method realizing wide range is simple, but when being applied to ultraviolet thermometric, because ultraviolet caloradiance varies with temperature excessive, single enlargement factor cannot meet the temperature survey of wide range; The method that the second realizes wide range can increase measurement range, but when being applied to ultraviolet thermometric, the module that in same temperature range, ultraviolet thermometric needs is more, and complex structure, cost is high.
Summary of the invention
The present invention is directed to the defect that background technology exists, propose a kind of the ultraviolet temp measuring method and the device that are applied to MOCVD epitaxy sheet surface temperature measurement, the high speed of epitaxial wafer surface true temperature in MOCVD technique can be realized, accurately measure.
Technical scheme of the present invention is as follows:
Be applied to a ultraviolet temp measuring method for MOCVD epitaxy sheet surface temperature measurement, it is characterized in that, comprise the following steps:
Step 1: measure the thermal radiation signal intensity of testee under selected wavelength, if photodetector output signal corresponding to current sub-range is saturated, then enters step 2; If the photodetector that current sub-range is corresponding does not export response, then enter step 3; Otherwise, enter step 4;
Step 2: if current sub-range is the upper limit of thermometric range, then export " temperature is too high, exceeds thermometric range " and indicate and turn back to step 1; Otherwise, reduce a frequency modulated light electric explorer gain, be switched to adjacent higher sub-range and enter step 1;
Step 3: if current sub-range is the lower limit of thermometric range, then export " temperature is too low, exceeds thermometric range " and indicate and turn back to step 1; Otherwise, promote a frequency modulated light electric explorer gain, be switched to adjacent lower sub-range and enter step 1;
Step 4: according to the current sub-range in step 1, selects the intensity of light source of mating with photodetector gain shift, carries out albedo measurement; Time on electromagnetic wave incident to the interface of different medium, can reflect, transmission and absorption, and α+ρ+T=1, wherein α is absorptivity, and ρ is reflectivity, T is transmissivity, according to Kirchhoff's law, absorptivity α at the same temperature=emissivity ε, and have T=0 for opaque surface, then emissivity ε=1-ρ, therefore calculates emissivity ε by measurement of reflectivity ρ;
Step 5: according to the emissivity ε that step 4 obtains, emissivity correction is carried out to the thermal radiation signal intensity that step 1 obtains, obtain the accurate temperature on testee surface.
Single wavelength temp measuring method measuring tempeature is adopted in step 1, because in the process adopting MOCVD growing film, the quartz observing window inside surface at probe place may growing film, and film is different to the transmitance of different wave length, and dual wavelength temperature-measuring results can be caused inaccurate.
Present invention also offers the above-mentioned temperature measuring equipment being applied to the ultraviolet temp measuring method of MOCVD epitaxy sheet surface temperature measurement, comprise light source module, measurement module, signal transmission & control module and host computer; Described light source module is for providing the light source needed for albedo measurement, and light signal is modulated, it is AC signal that such photodetector records the reflected signal that light source sends, thermal radiation signal is direct current signal, can extract light source reflected signal and thermal radiation signal by carrying out process to signal; Described measurement module comprises optical path and photodetector, for the measurement of the thermal radiation signal intensity on testee surface and the measurement of testee surface reflectivity; Signal transmission & control module is for controlling gain and the signals collecting of photodetector in the switch of light source in light source module and light intensity, measurement module; Host computer is used for communicating with signal transmission & control module, realizes sub-range, photodetector gain, light intensity isoparametric setting, data processing and interface display.
The present invention is the intensity automatically selecting the response of temperature measuring optical electric explorer and measurement of reflectivity light source used according to the thermal radiation signal power of the testee measured, thus high-acruracy survey under realizing different temperatures.The gain of photodetector of the present invention and the measurement of reflectivity intensity of light source used are adjustable, during test, first thermometric range is divided into two or more sub-range, every photodetector gain shift corresponding to sub-range and the measurement of reflectivity intensity of light source used different, gear is higher, photodetector gain is higher, and the intensity of light source is lower; And then by signal transmission & control module and host computer, the accurate measurement of each sub-range temperature can be realized under the undersaturated condition of photodetector.The photodetector suitable according to selected wavelength chooses and the light source of phase co-wavelength, signal transmission characteristics according to Planck blackbody radiation law, the thermometric range determined and device divides sub-range, every individual photodetector gain corresponding to sub-range determines and the gain of different sub-range is different, and the switching of sub-range is judged and the gear that automatically switches by signal transmission & control module and host computer according to photodetector output signal intensity.
Beneficial effect of the present invention is:
1, ultraviolet temp measuring method provided by the invention can regulate the intensity of light source of photodetector gain and albedo measurement automatically, realizes the accurate measurement to infrared-transparent material surface temperature, and can meet the temperature-measuring range 400 ~ 1400 DEG C in MOCVD technique; Meanwhile, the measurement of reflectivity and the measurement common optical pathways of caloradiance and photodetector, simplify the structure, and improves the dirigibility that quantity installed by temperature measuring equipment.
2, the present invention adopts and measures ultraviolet band heat radiation and carry out emittance correction to measure body surface temperature, and the temperature obtained is accurate; Adopt Single wavelength thermometry, automatically self photoelectric response gain and the intensity of light source can be regulated, realize wide range, high-precision temperature survey, and Single wavelength thermometric only need adopt a photodetector, structure is simple, on MOCVD, multiple temperature measurer can be installed simultaneously, realize the accurate measurement of multiple spot.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of temp measuring method provided by the invention;
Fig. 2 is the schematic diagram of temperature measuring equipment provided by the invention;
Fig. 3 is the structural representation of temperature measuring equipment provided by the invention.
Wherein, I is that light source module, II is for measurement module;
1 is the rotating shaft of MOCVD graphite plate, and 2 is disc, and 3 is epitaxial wafer, 4 is MOCVD upper cover, and 5 is view window, and 6 is lens module, 7 is spectral module, 8 is filtration module, and 9 is photodetector, and 10 is signal transmission & control module, 11 is host computer, 12 is light source, and 13 is collimation lens module, and 14 is MOCVD cavity, 15 is condenser lens, 16 is diaphragm, and 17 is the first collimation lens, and 18 is two-phase look beam splitter, 19 is heat absorbing glass, 20 is low pass filter, and 21 is narrow band pass filter, and 22 is the second collimation lens.
Embodiment
Below in conjunction with accompanying drawing the present invention done and introduce further.
The present invention is the intensity automatically selecting the response of temperature measuring optical electric explorer and measurement of reflectivity light source used according to the thermal radiation signal power of the testee measured, thus high-acruracy survey under realizing different temperatures.Fig. 1 is the process flow diagram of temp measuring method provided by the invention.The gain of photodetector of the present invention and the measurement of reflectivity intensity of light source used are adjustable, during test, first thermometric range is divided into two or more sub-range, every photodetector gain shift corresponding to sub-range and the measurement of reflectivity intensity of light source used different, gear is higher, photodetector gain is higher, and the intensity of light source is lower; And then by signal transmission & control module and host computer, the accurate measurement of each sub-range temperature can be realized under the undersaturated condition of photodetector.The photodetector suitable according to selected wavelength chooses and the light source of phase co-wavelength, signal transmission characteristics according to Planck blackbody radiation law, the thermometric range determined and device divides sub-range, every individual photodetector gain corresponding to sub-range determines and the gain of different sub-range is different, and the switching of sub-range is judged and the gear that automatically switches by signal transmission & control module and host computer according to photodetector output signal intensity.
Because ultraviolet caloradiance varies with temperature quite obviously (caloradiance at object 405nm place at 600 DEG C and 1190 DEG C differs more than 7 orders of magnitude), in order to all there is good resolution under ensureing each temperature spot and photodetector can not be saturated, the present invention varies with temperature according to radiation intensity and divides between temperature measuring area, i.e. sub-range, under different sub-ranges, photodetector adopts different gains to measure ultraviolet heat radiation, meanwhile, the intensity of light source that measurement of reflectivity is used also chooses different light intensity according to photodetector gain.Such as, measure caloradiance near 405nm, when thermometric range is 500 ~ 1400 DEG C, multiple gain point can be selected to measure according to photoelectric detector performance; As thermometric range 500 ~ 1400 DEG C is divided into three sub-ranges: 500 ~ 700 DEG C, 700 ~ 1000 DEG C, 1000 ~ 1400 DEG C, in order to corresponding three sub-ranges, three fixing gains taked by photodetector, adopt the adaptive intensity of light source to carry out albedo measurement under every sub-range.
Fig. 2 is the measurement mechanism that the present invention is applied to the ultraviolet temp measuring method of MOCVD epitaxy sheet surface temperature measurement.The radiation of epitaxial wafer 3 surface heat is by carrying out light splitting by spectral module 7 after view window 5, lens module 6, infrared part heat radiation is through spectral module 7, ultraviolet portion heat radiation is split after module 7 reflects and enters photodetector 9 by filtration module 8, signal transmission & control module 10 obtains the responsive status of photodetector 9, and caloradiance change photodetector being recorded by regulating the gain of photodetector 9 has higher resolution unlikely saturated again to temperature.The light source 12 of light source module selects the stabilized light source matched with thermometric wavelength, and configures thermostat module to guarantee light source stability; Light source 12 controls light intensity by signal transmission & control module 10 by controlling size of current, and light intensity is corresponding with size of current.Light source 12 arrives epitaxial wafer 3 surface by collimation lens module 13, spectral module 7, lens module 6, view window 5, reflect through spectral module 7 after being reflected through view window 5, lens module 6 by epitaxial wafer 3 again, after filtration optical module 8 laggard enter photodetector 9 obtain reflective light intensity, complete the measurement of reflectivity.The thermal radiation signal of photodetector and reflectivity signals are sent to host computer 11 by signal transmission & control module 10, calculate emissivity, carry out temperature correction and show temperature accurately.
Further, described spectral module 7 has the feature to ultraviolet reflectance infrared transmission, but light splitting piece nearly all at present all can not realize the transmission and reflection of 100% as grating, two-phase look beam splitter, still has sub-fraction infrared light reflection and ultraviolet light transmission.The present invention make use of fraction ultraviolet light exactly can through this feature of spectral module, use the ultraviolet source identical with thermometric wavelength used, complete the measurement of reflectivity corresponding to target under surveyed ultraviolet heat radiation wavelength, thus obtain the emissivity of target surface exactly, carry out the correction of emissivity, improve the accuracy of measuring tempeature.
Fig. 3 is the structural representation of a kind of temperature measuring equipment provided by the invention.The radiation of epitaxial wafer 3 surface heat focuses on by being collimated by the first collimation lens 17 after diaphragm 16 filtering parasitic light by view window 5 by condenser lens 15, after two-phase look beam splitter 18, infrared emanation is most of through two-phase look beam splitter 18, by heat absorbing glass 19, low pass filter 20, narrow band pass filter 21 filtering after part infrared emanation is reflected by two-phase look beam splitter 18.Ultraviolet heat radiation major part by two-phase look beam splitter 18 be reflected through heat absorbing glass 19, low pass filter 20, narrow band pass filter 21 laggard enter photodetector 9.Whether signal transmission & control module 10 exports response by photodetector 9 and judges whether saturated (namely in sub-range), if photodetector output signal is saturated or do not export response, signal transmission & control module 10 regulates the gain of photodetector 9 to carry out the measurement of thermal radiation signal to suitable gear automatically.After recording thermal radiation signal intensity, signal transmission & control module 10 determines to drive ultraviolet source 12 power used according to photodetector 9 place gear, and (under each gear, light source power intensity is known, corresponding light source power emitted light light intensity is known), the light that light source 12 sends is collimated after rear fraction UV light permeability two-phase look beam splitter 18 by the first collimation lens 17 by the second collimation lens 22, diaphragm 16, condenser lens 15, epitaxial wafer 3 surface is got to after view window 5, then reflected to be focused on after by diaphragm 16 filtering parasitic light by condenser lens 15 through view window 5 by epitaxial wafer 3 and collimated by the first collimation lens 17, through two-phase look beam splitter 18 back reflection by heat absorbing glass 19, low pass filter 20, narrow band pass filter 21 laggard enter photodetector 9, record the light intensity reflected.The reflectivity of target surface and then the emissivity of acquisition target surface can be calculated by the light intensity, light source intensity and each optical module that reflect to the transmitance of ultraviolet light, measure after the ultraviolet caloradiance obtained is calibrated by emissivity and obtain epitaxial wafer surface temperature accurately.
Filtration module of the present invention can also be at least one narrow band pass filter and any low pass filter composition.
Claims (2)
1. be applied to a ultraviolet temp measuring method for MOCVD epitaxy sheet surface temperature measurement, it is characterized in that, comprise the following steps:
Step 1: measure the thermal radiation signal intensity of testee under selected wavelength, if photodetector output signal corresponding to current sub-range is saturated, then enters step 2; If the photodetector that current sub-range is corresponding does not export response, then enter step 3; Otherwise, enter step 4;
Step 2: if current sub-range is the upper limit of thermometric range, then export " temperature is too high, exceeds thermometric range " and indicate and turn back to step 1; Otherwise, reduce a frequency modulated light electric explorer gain, be switched to adjacent higher sub-range and enter step 1;
Step 3: if current sub-range is the lower limit of thermometric range, then export " temperature is too low, exceeds thermometric range " and indicate and turn back to step 1; Otherwise, promote a frequency modulated light electric explorer gain, be switched to adjacent lower sub-range and enter step 1;
Step 4: according to the current sub-range in step 1, selects the intensity of light source of mating with photodetector gain shift, carries out albedo measurement, and then obtain emissivity ε;
Step 5: according to the emissivity ε that step 4 obtains, emissivity correction is carried out to the thermal radiation signal intensity that step 1 obtains, obtain the accurate temperature on testee surface.
2. be applied to a ultraviolet temperature measuring equipment for MOCVD epitaxy sheet surface temperature measurement, comprise light source module, measurement module, signal transmission & control module and host computer; Described light source module for providing the light source needed for albedo measurement, and is modulated light signal; Described measurement module comprises optical path and photodetector, for the measurement of the thermal radiation signal intensity on testee surface and the measurement of testee surface reflectivity; Signal transmission & control module is for controlling gain and the signals collecting of photodetector in the switch of light source in light source module and light intensity, measurement module; Host computer is used for communicating with signal transmission & control module, realizes setting, data processing and the interface display of sub-range, photodetector gain, light intensity parameter.
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| CN110793636A (en) * | 2019-10-31 | 2020-02-14 | 浙江大华技术股份有限公司 | Temperature measuring method and temperature measuring system of temperature measuring equipment, temperature measuring equipment and storage device |
| CN111928950A (en) * | 2020-08-11 | 2020-11-13 | 中国计量科学研究院 | Ultraviolet dual-wavelength radiation temperature measurement method |
| CN113252205A (en) * | 2021-04-07 | 2021-08-13 | 中山德华芯片技术有限公司 | RT detector suitable for lattice mismatch epitaxial material and application thereof |
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| CN106206849A (en) * | 2016-08-24 | 2016-12-07 | 中山德华芯片技术有限公司 | It is applied to temperature monitoring method prepared by the joint solar cell containing dbr structure six |
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| CN110793636B (en) * | 2019-10-31 | 2021-07-13 | 浙江大华技术股份有限公司 | Temperature measuring method and temperature measuring system of temperature measuring equipment, temperature measuring equipment and storage device |
| CN111928950A (en) * | 2020-08-11 | 2020-11-13 | 中国计量科学研究院 | Ultraviolet dual-wavelength radiation temperature measurement method |
| CN113252205A (en) * | 2021-04-07 | 2021-08-13 | 中山德华芯片技术有限公司 | RT detector suitable for lattice mismatch epitaxial material and application thereof |
| CN113252205B (en) * | 2021-04-07 | 2022-05-20 | 中山德华芯片技术有限公司 | RT detector suitable for lattice mismatch epitaxial material and application thereof |
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