CN105136310B - The ultraviolet temp measuring method and device of MOCVD epitaxy piece surface temperature measurement - Google Patents
The ultraviolet temp measuring method and device of MOCVD epitaxy piece surface temperature measurement Download PDFInfo
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- CN105136310B CN105136310B CN201510559816.2A CN201510559816A CN105136310B CN 105136310 B CN105136310 B CN 105136310B CN 201510559816 A CN201510559816 A CN 201510559816A CN 105136310 B CN105136310 B CN 105136310B
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Abstract
A kind of ultraviolet temp measuring method applied to MOCVD epitaxy piece surface temperature measurement belongs to non-contact ultraviolet technical field of temperature measurement.First, thermal radiation signal intensity of the testee under selected wavelength is measured, is responded according to the output of photodetector, regulator range；Secondly, according to the current sub- range in upper step, selection and the matched intensity of light source of photodetector gain shift, albedo measurement is carried out, and then obtain emissivity；The emissivity obtained according to upper step carries out emissivity correction to the thermal radiation signal intensity measured, obtains the accurate temperature on testee surface.The present invention measures body surface temperature using measuring ultraviolet band heat radiation and carry out emittance correction, and obtained temperature is accurate；Using Single wavelength thermometry, itself photoelectric respone gain and the intensity of light source can be automatically adjusted, realizes that wide range, high-precision temperature measure.
Description
Technical field
The invention belongs to non-contact ultraviolet technical field of temperature measurement, and in particular to a kind of to apply in Organometallic Chemistry gas
The measurement method and device of epitaxial wafer surface true temperature in the growth of phase depositing system (MOCVD) technique.
Background technology
In the growth course of semiconductive thin film, surface temperature is to determine an important parameter of film quality quality, it
Affect thickness, angularity and the quality of surface quantum trap growth of film surface.Currently, industrially producing semiconductor in batches
Film mostly uses greatly MOCVD (metal organic chemical vapor deposition), therefore, in MOCVD to film surface temperature it is accurate detection with
Control has great importance.
Currently, the measurement of film surface temperature mostly uses greatly infrared radiation thermometer in MOCVD, but with the hair of semiconductor industry
Exhibition, infrared radiation thermometer have been unable to meet the surface temperature measurement of part new material, such as blue especially to the material of infrared transparent
The materials such as jewel, gallium nitride, silicon carbide.And in semiconductor lighting industry, graphical sapphire substrate epitaxial nitride is mostly used greatly
The materials such as gallium, indium gallium nitrogen, therefore, infrared measurement of temperature has been unable to meet the demand applied at present.
Since the materials such as sapphire, gallium nitride, silicon carbide are to ultraviolet opaque, may be used it is ultraviolet to its temperature into
Row measures.But since ultraviolet band heat radiation is substantially weaker than infrared band, brought to ultraviolet hot radiation measurement prodigious tired
It is difficult；Secondly the caloradiance of the single wavelength in ultra-violet (UV) band varies with temperature very fast, if object is at 600 DEG C and 1190 DEG C
Caloradiance at 405nm differs as many as 7 orders of magnitude, and as wavelength shortens, this gap also will increase.And in infrared region
As the caloradiance at 1 μm only differs 3 orders of magnitude；It is about 40 at 600 DEG C that 2 μm, which are in caloradiance at 1190 DEG C,
Times, only poor an order of magnitude.
In order to widen measurement range, the wide range of infrared survey instrument is realized, usually there are two types of methods：One is red in use
Outer wavelength, the variation relative equilibrium of the caloradiance of this wave band at each temperature, at different temperatures radiation intensity difference
Substantially within 2 orders of magnitude, suitable photodetector and analog to digital conversion circuit are selected, it can be achieved that each in temperature range
The measurement of a warm area；Another kind is to use different wave length thermometric simultaneously, when as too low such as temperature, using longer wavelengths of thermometric mould
Block, as temperature increases, longer wavelength energy is measured using compared with small wavelength module into trip temperature more than after testing range；By more
A temperature measurement module widens testing range.The first realize wide range method it is simple, but applied to ultraviolet thermometric when, due to
Ultraviolet caloradiance vary with temperature it is excessive, single amplification factor cannot be satisfied wide range temperature measure；Second of realization
The method of wide range can increase measuring range, but when applied to ultraviolet thermometric, ultraviolet thermometric needs within the scope of same temperature
Module it is more, it is complicated, it is of high cost.
Invention content
In view of the defects in the background art, the present invention proposes one kind being applied to MOCVD epitaxy piece surface temperature measurement
Ultraviolet temp measuring method and device, it can be achieved that the high speed of epitaxial wafer surface true temperature in MOCVD techniques, accurate measuring.
Technical scheme is as follows：
A kind of ultraviolet temp measuring method applied to MOCVD epitaxy piece surface temperature measurement, which is characterized in that including following step
Suddenly：
Step 1：Thermal radiation signal intensity of the testee under selected wavelength is measured, if the corresponding photoelectricity of current sub- range
Detector output signal is saturated, then enters step 2；If currently the corresponding photodetector of sub- range does not export response, into
Enter step 3；Otherwise, 4 are entered step；
Step 2：If current sub- range is the upper limit of thermometric range, " temperature is excessively high, exceeds thermometric range " instruction is exported
And return to step 1；Otherwise, a frequency modulated light electric explorer gain is reduced, adjacent higher sub- range is switched to and enters step 1；
Step 3：If current sub- range is the lower limit of thermometric range, " temperature is too low, exceeds thermometric range " instruction is exported
And return to step 1；Otherwise, a frequency modulated light electric explorer gain is promoted, adjacent lower sub- range is switched to and enters step 1；
Step 4：According to the current sub- range in step 1, selection and the matched intensity of light source of photodetector gain shift,
Carry out albedo measurement；When on electromagnetic wave incident to the interface of different medium, it may occur that reflection, transmission and absorption, and α+ρ+T
=1, wherein α are absorptivity, and ρ is reflectivity, and T is transmissivity, according to Kirchhoff's law, at the same temperature absorptivity α=
Emissivity ε, and have T=0 for opaque surface, then emissivity ε=1- ρ, therefore hair can be calculated by measuring reflectivity ρ
Penetrate rate ε；
Step 5：The emissivity ε obtained according to step 4 carries out emissivity school to the thermal radiation signal intensity that step 1 obtains
Just, the accurate temperature on testee surface is obtained.
In step 1 use Single wavelength temp measuring method measuring temperature, be because using MOCVD growing films during,
Quartz observing window inner surface at probe may growing film, film is different to the transmitance of different wave length, can lead to double wave
Long temperature-measuring results are inaccurate.
The present invention also provides above applications in the thermometric dress of the ultraviolet temp measuring method of MOCVD epitaxy piece surface temperature measurement
It sets, including light source module, measurement module, signal transmission ＆ control module and host computer；The light source module is for providing reflection
Rate measures required light source, and is modulated to light signal, and such photodetector measures the reflection signal that light source is sent out and is
AC signal, thermal radiation signal are direct current signal, can extract out light source reflection signal and heat radiation by carrying out processing to signal
Signal；The measurement module includes optical path and photodetector, is used for the thermal radiation signal intensity on testee surface
Measurement and the measurement of testee surface reflectivity；Signal transmission ＆ control module is used to control opening for light source in light source module
It closes and the gain of photodetector in light intensity, measurement module and signal acquisition；Host computer is used for and signal transmission ＆ control module
It is communicated, realizes the setting of the parameters such as sub- range, photodetector gain, light intensity, data processing and interface display.
The present invention is to automatically select thermometric photodetector according to the thermal radiation signal power of the testee measured
Response and the intensity for measuring light source used in reflectivity, to realize high-acruracy survey under different temperatures.Photodetection of the present invention
The gain of device and the intensity of light source for measuring used in reflectivity are adjustable, and when test, thermometric range is divided into two first
Or multiple sub- ranges, photodetector gain shift corresponding to every sub- range and measure the intensity of light source used in reflectivity not
Together, gear is higher, and photodetector gain is higher, and the intensity of light source is lower；Then again by signal transmission ＆ control module and on
Position machine, you can the accurate measurement of each sub- range temperature is realized under the conditions of photodetector is undersaturated.According to selected wavelength
The light source for selecting suitable photodetector and phase co-wavelength, according to Planck blackbody radiation law, the thermometric range of determination
And the signal transmission characteristics of device divide sub- range, the photodetector gain corresponding to every sub- range is determining and different sub
The gain of range is different, and the switching of sub- range is according to photodetector output signal intensity by signal transmission ＆ control module and upper
Position machine judges and automatically switches gear.
Beneficial effects of the present invention are：
1, ultraviolet temp measuring method provided by the invention can automatically adjust the light source of photodetector gain and albedo measurement
Intensity realizes the accurate measurement to infrared-transparent material surface temperature, and disclosure satisfy that the temperature-measuring range 400 in MOCVD techniques
~1400 DEG C；Meanwhile the measurement of reflectivity and the measurement common optical pathways and photodetector of caloradiance, structure is simplified,
Improve the flexibility of temperature measuring equipment installation number.
2, the present invention using measurement ultraviolet band heat radiation and carries out emittance correction and measures body surface temperature, obtains
Temperature it is accurate；Using Single wavelength thermometry, itself photoelectric respone gain and the intensity of light source can be automatically adjusted, is realized a large amount of
Journey, high-precision temperature measure, and Single wavelength thermometric need to only use a photodetector, simple in structure, can be same on MOCVD
When multiple temperature measurers are installed, realize the accurate measurement of multiple spot.
Description of the drawings
Fig. 1 is the flow chart of temp measuring method provided by the invention；
Fig. 2 is the schematic diagram of temperature measuring equipment provided by the invention；
Fig. 3 is the structural schematic diagram of temperature measuring equipment provided by the invention.
Wherein, I it is light source module, II is measurement module；
1 is MOCVD graphite plate shafts, and 2 be disc, and 3 be epitaxial wafer, and 4 be MOCVD upper covers, and 5 be observation window, and 6 be lens mould
Block, 7 be spectral module, and 8 be filtration module, and 9 be photodetector, and 10 be signal transmission ＆ control module, and 11 be host computer, 12
It is collimation lens module for light source, 13,14 be MOCVD cavitys, and 15 be condenser lens, and 16 be diaphragm, and 17 be the first collimation lens,
18 be two-phase color beam splitter, and 19 be heat absorbing glass, and 20 be low pass filter, and 21 be spike filter, and 22 is accurate for second
Straight lens.
Specific implementation mode
The present invention is done below in conjunction with the accompanying drawings and is further introduced.
The present invention is to automatically select thermometric photodetector according to the thermal radiation signal power of the testee measured
Response and the intensity for measuring light source used in reflectivity, to realize high-acruracy survey under different temperatures.Fig. 1 provides for the present invention
Temp measuring method flow chart.The gain of photodetector of the present invention and the intensity of light source measured used in reflectivity are adjustable
, when test, thermometric range is divided into two or more sub- ranges first, the photodetector corresponding to every sub- range increases
The intensity of light source is different used in beneficial gear and measurement reflectivity, and gear is higher, and photodetector gain is higher, and the intensity of light source is got over
It is low；Then pass through signal transmission ＆ control module and host computer again, you can realized under the conditions of photodetector is undersaturated each
The accurate measurement of sub- range temperature.According to the light source of the selected suitable photodetector of wavelength selection and phase co-wavelength, root
Sub- range is divided according to the signal transmission characteristics of Planck blackbody radiation law, the thermometric range of determination and device, per height amount
The gain of photodetector gain determination and different sub- ranges corresponding to journey is different, and the switching of sub- range is according to photodetector
Output signal strength is judged by signal transmission ＆ control module and host computer and automatically switches gear.
Since ultraviolet caloradiance varies with temperature quite apparent (heat of the object at 600 DEG C and 1190 DEG C at 405nm
Radiation intensity differs as many as 7 orders of magnitude), in order to ensure that all there is preferable resolution ratio and photodetector under each temperature spot
It will not be saturated, the present invention is varied with temperature according to radiation intensity divides thermometric section, i.e., sub- range, photoelectricity under different sub- ranges
Detector measures ultraviolet heat radiation using different gains, meanwhile, the intensity of light source used in reflectivity is measured also according to photoelectricity
Detector gain chooses different light intensity.For example, measuring 405nm caloradiances nearby, thermometric range is 500~1400 DEG C
When, multiple gain points can be selected according to photoelectric detector performance and measure；Such as by thermometric range 500~1400 DEG C be divided into three
A sub- range：500~700 DEG C, 700~1000 DEG C, 1000~1400 DEG C, in order to correspond to three sub- ranges, photodetector is adopted
Three fixed gains are taken, to carrying out albedo measurement using the intensity of light source of adaptation under every sub- range.
Fig. 2 is the measuring device for the ultraviolet temp measuring method that the present invention is applied to MOCVD epitaxy piece surface temperature measurement.Extension
By being divided by spectral module 7 after observation window 5, lens module 6, infrared part heat radiation penetrates to divide 3 surface heat radiation of piece
Optical module 7, ultraviolet portion heat radiation is split after the reflection of module 7 enters photodetector 9, signal transmission by filtration module 8
The responsive status that photodetector 9 is obtained with control module 10, the gain by adjusting photodetector 9 make photodetector survey
The caloradiance variation obtained has higher resolution ratio again to temperature to be saturated.The light source 12 of light source module is selected and thermometric wave
The matched stabilized light source of appearance, and thermostat module is configured to ensure light source stability；Light source 12 is by signal transmission ＆ control module
10 control light intensity by controlling size of current, and light intensity is corresponding with size of current.Light source 12 passes through collimation lens module 13, light splitting
Module 7, lens module 6, observation window 5 reach epitaxial wafer 3 surface, then after being reflected through observation window 5, lens module 6 by epitaxial wafer 3
It is reflected through spectral module 7, obtains reflective light intensity into photodetector 9 after filtration module 8, complete the measurement of reflectivity.
The thermal radiation signal of photodetector and reflectivity signals are transmitted to host computer 11 by signal transmission ＆ control module 10, are calculated
To emissivity, carries out temperature correction and show accurate temperature.
Further, the spectral module 7 has the feature to ultraviolet reflectance infrared transmission, but almost all of point at present
Mating plate such as grating, two-phase color beam splitter all can not achieve 100% transmission and reflection, still have sub-fraction infrared light reflection and
Ultraviolet light transmission.The present invention is exactly that fraction ultraviolet light is utilized to penetrate spectral module this feature, using with used in thermometric
The identical ultraviolet source of wavelength completes the measurement for surveying the corresponding reflectivity of target under ultraviolet heat radiation wavelength, to accurately
The emissivity of target surface has been obtained, the amendment of emissivity is carried out, has improved the accuracy of measuring temperature.
Fig. 3 is a kind of structural schematic diagram of temperature measuring equipment provided by the invention.3 surface heat radiation of epitaxial wafer passes through observation window
5 are focused to filter out by diaphragm 16 by condenser lens 15 and are collimated by the first collimation lens 17 after stray light, through two-phase color beam splitter
After 18, infrared emanation largely penetrates two-phase color beam splitter 18, and part infrared emanation is anti-by two-phase color beam splitter 18
It is filtered out by heat absorbing glass 19, low pass filter 20, spike filter 21 after penetrating.Ultraviolet heat radiation is most of by two-phase color point
Light beam mirror 18 enters photodetector 9 after being reflected through heat absorbing glass 19, low pass filter 20, spike filter 21.Letter
Number transmission with control module 10 by photodetector 9 output response judge whether be saturated (i.e. whether in sub- range), if light
Electric explorer output signal is saturated or without output response, and signal transmission ＆ control module 10 automatically adjusts photodetector 9
Gain carries out the measurement of thermal radiation signal to suitable gear.After measuring thermal radiation signal intensity, signal transmission ＆ control module 10
Determine that (light source power intensity is it is known that right under each gear for power used in driving ultraviolet source 12 according to 9 place gear of photodetector
Answer known to light source power emitted light light intensity), fraction is ultraviolet after the light that light source 12 is sent out is collimated by the second collimation lens 22
Light is through outer by being got to after the first collimation lens 17, diaphragm 16, condenser lens 15, observation window 5 after two-phase color beam splitter 18
Prolong 3 surface of piece, then reflected by observation window 5 by epitaxial wafer 3 focused by condenser lens 15 filtered out by diaphragm 16 it is spuious
It is collimated by the first collimation lens 17 after light, is filtered by heat absorbing glass 19, low pass through 18 back reflection of two-phase color beam splitter
Enter photodetector 9 after piece 20, spike filter 21, measures reflected light intensity.Pass through reflected light intensity, light source
Light intensity and each optical module can be calculated the reflectivity of target surface to the transmitance of ultraviolet light and then obtain target surface
Emissivity, the ultraviolet caloradiance measured obtains accurate epitaxial wafer surface temperature after being calibrated by emissivity.
Filtration module of the present invention can also be at least one spike filter and arbitrary low pass filter composition.
Claims (2)
1. a kind of ultraviolet temp measuring method applied to metal organic chemical vapor deposition system epitaxial wafer surface temperature measurement, feature exists
In including the following steps：
Step 1：Thermal radiation signal intensity of the testee under selected wavelength is measured, if the corresponding photodetection of current sub- range
Device output signal is saturated, then enters step 2；If currently the corresponding photodetector of sub- range does not export response, enter step
Rapid 3；Otherwise, 4 are entered step；
Step 2：If current sub- range is the upper limit of thermometric range, exports " temperature is excessively high, exceeds thermometric range " and indicate and return
Return to step 1；Otherwise, a frequency modulated light electric explorer gain is reduced, adjacent higher sub- range is switched to and enters step 1；
Step 3：If current sub- range is the lower limit of thermometric range, exports " temperature is too low, exceeds thermometric range " and indicate and return
Return to step 1；Otherwise, a frequency modulated light electric explorer gain is promoted, adjacent lower sub- range is switched to and enters step 1；
Step 4：According to the current sub- range in step 1, selection and the matched intensity of light source of photodetector gain shift carry out
Albedo measurement, and then obtain emissivity ε；
Step 5：The emissivity ε obtained according to step 4 carries out emissivity correction to the thermal radiation signal intensity that step 1 obtains, and obtains
To the accurate temperature on testee surface.
2. a kind of ultraviolet survey being applied to metal organic chemical vapor deposition system epitaxial wafer surface temperature measurement as described in claim 1
The temperature measuring equipment of warm method, including light source module, measurement module, signal transmission ＆ control module and host computer；The light source die
Block is used to provide the light source needed for albedo measurement, and is modulated to light signal；The measurement module includes optical path
And photodetector, the measurement of the thermal radiation signal intensity for testee surface and the survey of testee surface reflectivity
Amount；Signal transmission ＆ control module is for controlling the switch of light source and photodetector in light intensity, measurement module in light source module
Gain and signal acquisition；Host computer realizes sub- range, photodetector for being communicated with signal transmission ＆ control module
Gain, the setting of light intensity parameter, data processing and interface display.
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| CN106206849B (en) * | 2016-08-24 | 2017-11-21 | 中山德华芯片技术有限公司 | Temperature monitoring method when prepared by six joint solar cells containing dbr structure |
| CN110426139B (en) * | 2019-08-09 | 2021-08-24 | 杭州磊鑫精密仪器有限公司 | Temperature measurement management system and management method based on mobile terminal |
| CN110793636B (en) * | 2019-10-31 | 2021-07-13 | 浙江大华技术股份有限公司 | Temperature measuring method and temperature measuring system of temperature measuring equipment, temperature measuring equipment and storage device |
| CN111928950A (en) * | 2020-08-11 | 2020-11-13 | 中国计量科学研究院 | Ultraviolet dual-wavelength radiation temperature measurement method |
| CN113252205B (en) * | 2021-04-07 | 2022-05-20 | 中山德华芯片技术有限公司 | RT detector suitable for lattice mismatch epitaxial material and application thereof |
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