CN104180905B - Infrared temperature measurement method and device for MOCVD process growth - Google Patents
Infrared temperature measurement method and device for MOCVD process growth Download PDFInfo
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Abstract
Disclosed are an infrared temperature measurement method and device for MOCVD process growth. The method and the device are characterized in that a temperature measurement process includes the following steps: firstly measuring the emissivity of an object and according to the Kirchhoff law, obtaining the emissivity of the object; comparing the emissivity and an emissivity threshold, and if the measured emissivity is smaller than the threshold, adopting a single wavelength and emissivity correction method to measure the temperature; or adopting a far-infrared double-wavelength method to measure the temperature and when the energy of a larger wavelength in the far infrared wavelengths exceeds a test measuring range, adopting near-infrared double wavelengths to measure the temperature and similarly, when the energy of a smaller wavelength in the near-infrared wavelengths is lower than the test measuring range, skipping to the far-infrared double wavelengths to measure the temperature. The advantages of the method and the device are that through effective combination advantages of single-wavelength and double-wavelength temperature measurement, different methods are selected for temperature measurement so that a temperature measurement problem of a complex surface in an MOCVD growth process is solved; and the measurement methods are automatically selected and the measurement precision is high and temperature measurement of the four wavelengths significantly expands the temperature measurement range.
Description
Technical field
The present invention relates to the multi-wavelength integrated temperature measurement method of non-contacting infrared field of temperature measurement, especially relate to table complicated and changeable
The temp measuring method in face, a kind of metal-organic chemical vapor deposition equipment chemical vapor depsotition equipment（MOCVD）It is infrared that technique grows
Temp measuring method and device.
Background technology
Metallochemistry vapour deposition（MetalOrganicChemicalVaporDeposition, abbreviation MOCVD）Equipment is
A kind of semiconductor epitaxial growth equipment, its growing environment is complicated, and differential responses elementary reaction intracavity injects gas with various, and presses
Strong difference is also larger, and these bring larger difficulty all to accurate thermometric；Epitaxial film growth needs to ensure uniformity, repetition simultaneously
Property and controllability, in growth course the slide holder of substrate be typically rotated it is impossible to engaged test surface carries out thermometric.These
Harsh test environment determines MOCVD technique thermometric and can only adopt contactless temperature-measuring method.
Industry to measure MOCVD technique growth temperature using Single wavelength plus emittance correction method of testing mostly at present, but
Accurate thermometric problem during weak emissivity cannot be overcome；And though dual wavelength thermometric can ignore the impact to thermometric for the emissivity, light
Bright interference surface is very big on the impact of its thermometric, directly results in and cannot use；Temperatures span during MOCVD growth technique simultaneously
Scope is wider, there are currently no single-measurement method and can meet FR thermometric.Dual wavelength is adopted for weak reflectivity surface
Thermometric, it can avoid the impact to thermometric for the emissivity；For the glossy surface larger easy measurement of reflectance this moment, so adopting
Single wavelength modification method can accurate thermometric；For the low temperature extension of weak reflectivity surface, select far and near two in different-waveband
Wavelength carries out dual wavelength design and can effectively expand temperature-measuring range, meets the thermometric demand of MOCVD technique growth.
But, Single wavelength thermometric（I.e. colour temperature method）The a certain wavelength energy being radiated by Measuring Object come thermometric, by object
Emissivity impact ratio is larger, and all more sensitive to measurement height and measurement optical aperture, it is difficult to ensure that the standard of its measurement
Really property；Accuracy can be ensured to a certain extent by emittance correction, but when emissivity is larger, corresponding reflectance is relatively
Weak be just difficult accurately to measure, now the accuracy of Single wavelength thermometric just cannot be guaranteed.
Dual wavelength thermometric（I.e. colorimetric warming therapy）By measuring the energy ratio of two specific wavelengths come thermometric, it can overcome outer
The impact to measurement of boundary's environment and emissivity, but require emittance to reach its accuracy of certain level guarantee and
Precision；It cannot measure to epitaxial film interference surface on bright substrate simultaneously, is that it is applied to MOCVD technique growth thermometric
Fatal defects.
Content of the invention
The invention aims to solving the problems, such as current MOCVD device growth technique thermometry, provide one
Plant the Single wavelength of emittance correction and the temp measuring method of far and near infrared band four wavelength combinations.The present invention is the transmitting according to measurement
Rate size is automatically selecting temp measuring method；Present invention composition is main to be included：Emissivity measurement, Single wavelength measurement and dual wavelength are surveyed
Amount part, by computer software co-ordination.The infrared measurement of temperature method of the MOCVD technique growth of the present invention, comprises following step
Suddenly：
Step 1, measures reflectance：According to the Kirchhoff's theorem of thermal conduction study, for emissivity ξ of nontransparent testee
With reflectance r's and be 1, that is,：ξ=1-r, the reflectance r of Measuring Object, can be calculated corresponding emissivity：ξ；
Step 2, selects temp measuring method：Emissivity ξ of measurement in step 1 is compared with the emissivity threshold values K setting, if
ξ<K, now adopts Single wavelength emittance correction method thermometric, enters step 5；Otherwise, using dual-wavelength method thermometric, enter step
Rapid 3；
Step 3, measurement radiating object is in the ENERGY E selecting longer far infrared wavelength, if E is less than testing range, this
Shi Caiyong far infrared dual wavelength thermometric enters step 5；If E is more than testing range, now carry out step 4；
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy
Less than testing range, then enter step 3, otherwise enter step 5；
Step 5 is calculated the accurate temperature of infrared survey, and shows temp measuring method and survey according to different step entrance
Amount temperature.
Step 1 is to realize the emissivity of indirect Measuring Object by real-time measurement reflectance.
The described selection temp measuring method of step 2 is the size of the emissivity according to testee, and described threshold values K is according to reality
Border Single wavelength thermometric accurately and effectively scope determining.
To in 4 for reflecting stronger smooth surface, that is, the bright interference surface of MOCVD technique growth is basis to step 2
Threshold values judges to adopt Single wavelength emittance correction method thermometric, and for the stronger rough surface of scattering then according to emissivity threshold values
K judges to select temp measuring method, and that is, two kinds of surfaces are a kind of special temperature measuring applications under emissivity threshold values judges, in coarse technique table
Face using remote, near infrared band dual-wavelength method thermometric, its concrete scope is：700nm～1 μm, 1.3 μm～2.0 μm；Smooth
Interference surface adds emittance correction method thermometric using Single wavelength.Two methods are differentiated by emissivity measurement threshold values K
Select.
Present invention also offers the temperature measuring equipment of the infrared measurement of temperature method using above-mentioned MOCVD technique growth, comprise three big
Part：Emissivity measurement device, dual-wavelength measurement device and Single wavelength measurement apparatus are it is characterised in that emissivity measurement device portion
Point：Stabilized lasers source 20 sends stabilized lasers road after top spectroscope 19 and reflexes to infrared sensor 21, and another road is anti-
Sequentially pass through after being mapped to spectroscope 8 electric magnet but move baffle plate 4, spectroscope 2, infrared radiating body 1 reflection after through spectroscope 2, filter
Sensor 18 is arrived after wave plate 3.Dual-wavelength measurement device part：Infrared radiating body 1 irradiating infrared light is through spectroscope 2, electric magnet
It is divided into two-way after driving baffle plate 4, spectroscope 8：The first via is being divided into two-way after spectroscope 10, and a road is after filtering after piece 12
To sensor 15, piece 13 gathers far infrared dual wavelength energy respectively to sensor 14 after filtering on another road；Second tunnel is through undue
Light microscopic 5 is separated into two-way, and piece 6 arrives sensor 7 after filtering on a road, and in addition piece 9 is adopted respectively to sensor 11 after filtering on a road
Collect Near-infrared Double wavelength energy.The sensing of narration in this partial devices of Single wavelength measuring device part and dual-wavelength measurement device
Device 15 collection light path is compatible, and that is, the two shares.
It is an advantage of the invention that：Grow the pluses and minuses of practical situation and the long temp measuring method of single-double wave in conjunction with MOCVD technique, carry
Supply a kind of method that technique grows gamut thermometric, it is suitable for：400 1200 DEG C of wide temperature-measuring range；Test table complicated and changeable
Face and environment, it is related to the surfaces such as coarse, smooth, bright interference.By effectively combining single-double wave long thermometric advantage, solve
Complex surface thermometric problem in MOCVD growth course.Automatically select method of testing, accuracy of measurement is high, four wavelength simultaneously
Thermometric greatly extends temperature-measuring range.
Brief description
Fig. 1 is the flow chart of invention thermometric；
Fig. 2 is the temp measuring method of the embodiment of the present invention one and the schematic diagram of device；
Fig. 3 is the temp measuring method of the embodiment of the present invention two and the schematic diagram of device.
In figure, 1 infrared radiating body, 2 spectroscopes, 3 filter plates, 4 solenoid actuated baffle plates, 5 spectroscopes, 6 filter plates, 7 red
Outer sensor, 8 spectroscopes, 9 filter plates, 10 spectroscopes, 11 infrared sensors, 12 filter plates, 13 filter plates, 14 infrared sensings
Device, 15 infrared sensors, 16 data acquisition process units, 17 data transmission interfaces, 18 infrared sensors, 19 spectroscopes, 20 steady
Determine lasing light emitter, 21 infrared sensors.
Specific embodiment
Further illustrate embodiments of the invention below in conjunction with the accompanying drawings：
Embodiment one
The infrared measurement of temperature method and step of the MOCVD technique growth of the present embodiment is as follows：Referring to Fig. 1 and Fig. 2.Step 1, measurement
Reflectance：According to the Kirchhoff's theorem of thermal conduction study, for nontransparent testee emissivity ξ and reflectance r's and be 1,
I.e.：
ξ=1-r（1）
The reflectance of Measuring Object, by formula（1）Corresponding emissivity can be calculated:ξ；
The laser of stabilized lasers source 20 transmitting reflexes to infrared sensor 21 through spectroscope 19 and records its initial laser work(
Rate, in addition a road light splitting is to spectroscope 8 and 3, after reflex to infrared sensor 18 through infrared radiating body 1 and record reflected light work(
Rate.
Step 2, selects temp measuring method：Emissivity ξ of measurement in step 1 is compared with the emissivity threshold values K setting, if
ξ<K, now adopts Single wavelength emittance correction method thermometric, enters step 5；Otherwise, using dual-wavelength method thermometric, enter step
Rapid 3；
Step 1 measurement data processes the emissivity being calculated radiant body 1 through processing of circuit unit 16.Then, come with this
Select the long temp measuring method of single-double wave.
Through baffle plate 4, baffle plate 4 is that the light of a solenoid actuated leads to a part of light through spectroscope 2 for the infrared radiating body 1
Road, is opened and closed by sequencing contro baffle plate and can measure the measurement of sensor dark current and emittance collection；
Step 3, measurement radiating object is in the ENERGY E selecting longer far infrared wavelength, if E is less than testing range, this
Shi Caiyong far infrared dual wavelength thermometric enters step 5；If E is more than testing range, now carry out step 4；
Then the mirror 8 that is split is divided into two-way light, and a road is for far infrared dual-wavelength measurement, and a road is for Near-infrared Double
Wavelength measurement；After the first via is filtered by filter plate 12 and 13 after spectroscope 10 more respectively again, then by sensor 14 and 15 points
The energy that corresponding dual wavelength calculates Cai Ji not obtained by two-way wavelength；
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy
Less than testing range, then enter step 3, otherwise enter step 5；
The second road infrared light that same spectroscope 8 separates, divides after spectroscope 5 and is selected Near-infrared Double by filter plate 6 and 9
Wavelength is gathered two-way wavelength respectively by sensor 7 and 11 again and obtains corresponding Near-infrared Double wavelength energy;
Step 5 is calculated the accurate temperature of infrared survey, and shows temp measuring method and survey according to different step entrance
Amount temperature.
Last this two-way output energy is obtained corresponding temperature-measuring results by signal acquisition process cell processing, and passes through interface
Circuit 17 reaches host computer PC.The passage of wherein Single wavelength measurement is that the sensor 15 of phase co-wavelength corresponding with filter plate 3 is adopted
The energy integrating is as Single wavelength thermometric compatible channels.Equally, when baffle plate 4 is closed, above-mentioned all the sensors record real-time dark current, can
To be modified to thermometric, improve accuracy.
Using the temperature measuring equipment of the infrared measurement of temperature method of above-mentioned MOCVD technique growth, comprise：Emissivity measurement device, double
Wavelength measuring apparatus and Single wavelength measurement apparatus three parts：Emissivity measurement device, dual-wavelength measurement device and Single wavelength are surveyed
Amount device is it is characterised in that emissivity measurement device part：Stabilized lasers source 20 sends stabilized lasers through top spectroscope 19
A road reflexes to infrared sensor 21 afterwards, and another road sequentially passes through electric magnet and but moves baffle plate 4, spectroscope after reflexing to spectroscope 8
2nd, arrive sensor 18 after spectroscope 2, filter plate 3 after infrared radiating body 1 reflection.Dual-wavelength measurement device part：Infrared spoke
Beam 1 irradiating infrared light is divided into two-way after spectroscope 2, solenoid actuated baffle plate 4, spectroscope 8：The first via is through spectroscope
Being divided into two-way after 10, sensor 15 is arrived after piece 12 after filtering in a road, and piece 13 arrives sensor 14 respectively after filtering on another road
Collection far infrared dual wavelength energy；Second tunnel is separated into two-way through spectroscope 5, and piece 6 arrives sensor 7, separately after filtering on a road
Piece 9 collects Near-infrared Double wavelength energy respectively to sensor 11 after filtering on an outer road.This portion of Single wavelength measuring device part
Separating device is compatible with the sensor 15 collection light path of narration in dual-wavelength measurement device, and that is, the two shares.
Embodiment two：
Embodiment two is identical with embodiment one, except that：Referring to Fig. 3, its reflection of the laser of stabilized lasers source 1 transmitting
Photo measure part is the radiation path compatible measurement being gathered by sensor 15, reaches the purpose of emissivity measurement.It eliminates list
Solely emissivity measurement passage, what other were similar does compatible channels such as with other passages：Sensor 7,11,14 Measurement channel, all with
This embodiment is considered as same instance.
Claims (6)
1. a kind of infrared measurement of temperature method of MOCVD technique growth is it is characterised in that comprise the steps of：
Step 1, measures reflectance：According to the Kirchhoff's theorem of thermal conduction study, for nontransparent testee emissivity ξ with anti-
Penetrate rate r and be 1, that is,：ξ=1-r, the reflectance r of Measuring Object, can be calculated corresponding emissivity：ξ；
Step 2, selects temp measuring method：Emissivity ξ of measurement in step 1 is compared with the emissivity threshold values K setting, if ξ<K,
Now adopt Single wavelength emittance correction method thermometric, enter step 5；Otherwise, using dual-wavelength method thermometric, enter step 3；
Step 3, measurement radiating object, in the ENERGY E selecting longer far infrared wavelength, if E is less than testing range, is now adopted
Enter step 5 with far infrared dual wavelength thermometric；If E is more than testing range, now carry out step 4；
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy is less than
Testing range, then enter step 3, otherwise enters step 5；
Step 5 is calculated the accurate temperature of infrared survey, and shows temp measuring method and measurement temperature according to different step entrance
Degree.
2. the infrared measurement of temperature method of MOCVD technique growth according to claim 1 is it is characterised in that step 1 is by reality
When measurement reflectance realizing the emissivity of indirect Measuring Object.
3. the infrared measurement of temperature method of MOCVD technique according to claim 1 growth is it is characterised in that the described choosing of step 2
Select the size of the emissivity that temp measuring method is according to testee, described threshold values K is according to actual Single wavelength thermometric accurate and effective
Scope determining.
4. MOCVD technique according to claim 1 growth infrared measurement of temperature method it is characterised in that step 2 in 4 for
Reflect stronger smooth surface, that is, the bright interference surface of MOCVD technique growth is to judge using Single wavelength transmitting according to threshold values
Rate modification method thermometric, and then judge to select temp measuring method according to emissivity threshold values K for scattering stronger rough surface.
5. the infrared measurement of temperature method of MOCVD technique according to claim 1 growth is it is characterised in that red described in step 3 and 4
Outer dual wavelength temperature measurement fraction adopts four different wave lengths, is distributed near, remote two infrared bands, is distributed near infrared band scope
It is 700nm～1 μm, the scope of far infrared band is 1.3 μm～2.0 μm.
6. the temperature measuring equipment used by infrared measurement of temperature method of the MOCVD technique growth described in claim 1, comprises：Emissivity is surveyed
Amount device, dual-wavelength measurement device and Single wavelength measurement apparatus three parts are it is characterised in that emissivity measurement device part：Surely
Determine lasing light emitter (20) and send stabilized lasers to reflex to infrared sensor (21), another Reuter through top spectroscope (19) Hou Yilu
Sequentially pass through after being mapped to spectroscope (8) solenoid actuated baffle plate (4), spectroscope (2), after infrared radiating body (1) reflection through undue
Light microscopic (2), filter plate (3) arrive sensor (18), dual-wavelength measurement device part afterwards：Infrared radiating body (1) irradiating infrared light warp
Cross spectroscope (2), solenoid actuated baffle plate (4), spectroscope are divided into two-way after (8)：The first via is divided after spectroscope (10) again
Become two-way, piece (12) arrives sensor (15) afterwards after filtering on a road, piece (13) arrives sensor (14) respectively after filtering on another road
Collection far infrared dual wavelength energy；Second tunnel is separated into two-way through spectroscope (5), and piece (6) arrives sensor after filtering on a road
(7), in addition piece (9) collects Near-infrared Double wavelength energy respectively to sensor (11) after filtering on a road；Single wavelength measurement dress
Put compatible with sensor (15) the collection light path in dual-wavelength measurement device, that is, the two shares.
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Effective date of registration: 20180731 Address after: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee after: Guangdong RealFaith Semiconductor Equipment Co., Ltd. Address before: 528251 C, first floor, west of Foshan Road, Nansha Road, Guangdong. Patentee before: Gan Zhiyin |
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Address after: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee after: Guangdong Zhongyuan Semiconductor Technology Co.,Ltd. Address before: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee before: GUANGDONG REAL FAITH SEMICONDUCTOR Co.,Ltd. |