CN104180905A - Infrared temperature measurement method and device for MOCVD process growth - Google Patents
Infrared temperature measurement method and device for MOCVD process growth Download PDFInfo
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Abstract
Disclosed are an infrared temperature measurement method and device for MOCVD process growth. The method and the device are characterized in that a temperature measurement process includes the following steps: firstly measuring the emissivity of an object and according to the Kirchhoff law, obtaining the emissivity of the object; comparing the emissivity and an emissivity threshold, and if the measured emissivity is smaller than the threshold, adopting a single wavelength and emissivity correction method to measure the temperature; or adopting a far-infrared double-wavelength method to measure the temperature and when the energy of a larger wavelength in the far infrared wavelengths exceeds a test measuring range, adopting near-infrared double wavelengths to measure the temperature and similarly, when the energy of a smaller wavelength in the near-infrared wavelengths is lower than the test measuring range, skipping to the far-infrared double wavelengths to measure the temperature. The advantages of the method and the device are that through effective combination advantages of single-wavelength and double-wavelength temperature measurement, different methods are selected for temperature measurement so that a temperature measurement problem of a complex surface in an MOCVD growth process is solved; and the measurement methods are automatically selected and the measurement precision is high and temperature measurement of the four wavelengths significantly expands the temperature measurement range.
Description
Technical field
The present invention relates to the multi-wavelength integrated temperature measurement method in non-contacting infrared thermometric field, especially the temp measuring method that relates to surface complicated and changeable, infrared measurement of temperature method and the device of the growth of a kind of metal-organic chemical vapor deposition equipment chemical vapor depsotition equipment (MOCVD) technique.
Background technology
Metallochemistry vapour deposition (MetalOrganicChemicalVaporDeposition, abbreviation MOCVD) equipment is a kind of semiconductor epitaxial growth apparatus, its growing environment is complicated, in differential responses elementary reaction chamber, inject gas with various, and pressure difference is also larger, these bring larger difficulty all to accurate thermometric; Epitaxial film growth need to guarantee homogeneity, repeatability and controllability simultaneously, and in growth course, the slide holder of substrate normally rotates, and can not carry out thermometric in engaged test surface.These harsh test environments have determined that MOCVD technique thermometric can only adopt contactless temperature-measuring method.
At present industry mostly adopts single wavelength to add emittance correction method of testing and measures MOCVD technique growth temperature, but accurate thermometric problem cannot overcome weak emissivity time; Though and dual wavelength thermometric can be ignored the impact of emissivity on thermometric, bright interference surface is very large on its thermometric impact, directly causes using; In MOCVD growth technique process, temperatures span scope is wider simultaneously, does not have now single-measurement method can meet FR thermometric.For weak reflectivity surface, adopt dual wavelength thermometric, it can avoid the impact of emissivity on thermometric; For the glossy surface large easily measurement of reflectivity this moment, so adopt accurately thermometric of single wavelength modification method; For the low temperature expansion on weak reflectivity surface, the wavelength in the far and near two pairs of different-wavebands of selection carries out dual wavelength design can effectively expand temperature-measuring range, meets the thermometric demand of MOCVD technique growth.
But single wavelength thermometric (being colour temperature method) carrys out thermometric by measuring a certain wavelength energy of object radiation, affected by object emissivity larger, and all more responsive to measuring height and measurement optical aperture, be difficult to guarantee the accuracy of its measurement; By emittance correction, can guarantee to a certain extent accuracy, but when emissivity is larger, corresponding reflectivity is just difficult for Measurement accuracy a little less than, and now the accuracy of single wavelength thermometric just can not be guaranteed.
Dual wavelength thermometric (being colorimetric warm therapy) carrys out thermometric by measuring the energy ratio of two specific wavelengths, and it can overcome external environment and the impact of emissivity on measurement, but requires emittance will reach its accuracy of certain level guarantee and precision; It cannot be measured extension film interference surface on bright substrate simultaneously, is its fatal shortcoming that is applied to MOCVD technique growth thermometric.
Summary of the invention
The object of the invention is the problem existing in order to solve current MOCVD equipment growth technique thermometry, a kind of single wavelength of emittance correction and the temp measuring method of far and near infrared band four wavelength combinations are provided.The present invention selects temp measuring method automatically according to the emissivity size of measuring; The present invention forms mainly and comprises: emissivity measurement, single wavelength measurement and dual-wavelength measurement part, and by computer software co-ordination.The infrared measurement of temperature method of MOCVD technique growth of the present invention, comprises following steps:
Step 1, measurement of reflectivity: according to the Kirchhoff's theorem of thermal conduction study, for the emissivity ξ of nontransparent testee and reflectivity r's and be 1, that is: ξ=1-r, measures the reflectivity r of object, can calculate corresponding emissivity: ξ;
Step 2, selects temp measuring method: by the emissivity ξ measuring in step 1 and the emissivity threshold values K comparison of setting, if ξ is <K, now adopt single wavelength emission rate modification method thermometric, enter step 5; Otherwise, adopt dual wavelength method thermometric, enter step 3;
Step 3, measuring radiation object, in the ENERGY E of selected longer far infrared wavelength, if E is less than testing range, now adopts far infrared dual wavelength thermometric to enter step 5; If E is greater than testing range, now carry out step 4;
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy is lower than testing range, enters step 3, otherwise enters step 5;
Step 5 calculates the accurate temperature of Infrared survey, and shows temp measuring method and measure temperature according to different step entrance.
Step 1 is by real-time measurement of reflectivity, to realize the emissivity of indirect measurement object.
The described selection temp measuring method of step 2 is the sizes according to the emissivity of testee, described threshold values K according to actual list wavelength thermometric accurately and effectively scope determine.
Step 2 in 4 for the stronger smooth surface of reflection, the bright interference surface that is the growth of MOCVD technique is that judgement adopts single wavelength emission rate modification method thermometric according to threshold values, for the rough surface that scattering is stronger, according to emissivity threshold values K, judge to select temp measuring method, two kinds of surfaces are the lower a kind of special temperature measuring applications of emissivity threshold values judgement, at coarse artistic face, adopt far away, near-infrared band dual wavelength method thermometric, its concrete scope is: 700nm～1 μ m, 1.3 μ m～2.0 μ m; In smooth interference surface, adopt single wavelength to add emittance correction method thermometric.Two kinds of methods are differentiated selection by emissivity measurement threshold values K.
The present invention also provides the temperature measuring equipment of the infrared measurement of temperature method of using above-mentioned MOCVD technique growth, comprise three parts: emissivity measurement device, dual-wavelength measurement device and single wavelength measuring apparatus, it is characterized in that emissivity measurement device part: stabilized lasers source 20 is sent stabilized lasers and reflexed to infrared sensor 21 through spectroscope 19Hou mono-tunnel, top, sensor 18 is arrived after moving baffle plate 4, spectroscope 2, infrared radiating body 1 reflection through electromagnet after reflexing to spectroscope 8 successively in another road after spectroscope 2, filter plate 3.Dual-wavelength measurement device part: infrared radiating body 1 irradiating infrared light is divided into two-way after spectroscope 2, solenoid actuated baffle plate 4, spectroscope 8: the first via is being divided into two-way after spectroscope 10, sensor 15 is arrived after wave plate 12 after filtration in one tunnel, and another road after filtration wave plate 13 gathers respectively far infrared dual wavelength energy to sensor 14; The second tunnel is divided into two-way again through spectroscope 5, and wave plate 6 is to sensor 7 after filtration on a road, and an other road after filtration wave plate 9 collects respectively Near-infrared Double wavelength energy to sensor 11.It is compatible that the sensor 15 of narrating in single wavelength measuring apparatus this partial devices of part and dual-wavelength measurement device gathers light path, and the two shares.
Advantage of the present invention is: in conjunction with the relative merits of MOCVD technique growth actual conditions and the long temp measuring method of single-double wave, provide a kind of method of technique growth gamut thermometric, it is applicable to: 400-1200 ℃ of wide temperature-measuring ranges; Test surfaces complicated and changeable and environment, it relates to the surfaces such as coarse, smooth, bright interference.By effectively, in conjunction with the long thermometric advantage of single-double wave, solved the complex surface thermometric problem in MOCVD growth course.Automatically select method of testing, accuracy of measurement is high, and four wavelength thermometrics are greatly expanded temperature-measuring range simultaneously.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of thermometric of the present invention;
Fig. 2 is the temp measuring method of the embodiment of the present invention one and the schematic diagram of device;
Fig. 3 is the temp measuring method of the embodiment of the present invention two and the schematic diagram of device.
In figure, 1 infrared radiating body, 2 spectroscopes, 3 filter plates, 4 solenoid actuated baffle plates, 5 spectroscopes, 6 filter plates, 7 infrared sensors, 8 spectroscopes, 9 filter plates, 10 spectroscopes, 11 infrared sensors, 12 filter plates, 13 filter plates, 14 infrared sensors, 15 infrared sensors, 16 data acquisition process unit, 17 data transmission interfaces, 18 infrared sensors, 19 spectroscopes, 20 stabilized lasers sources, 21 infrared sensors.
Embodiment
Below in conjunction with accompanying drawing, further illustrate embodiments of the invention:
Embodiment mono-
The infrared measurement of temperature method step of the MOCVD technique growth of the present embodiment is as follows: referring to Fig. 1 and Fig. 2.Step 1, measurement of reflectivity: according to the Kirchhoff's theorem of thermal conduction study, for the emissivity ξ of nontransparent testee and reflectivity r's and be 1, that is:
ξ＝1-r
（1）
The reflectivity of measuring object, through type (1) can calculate corresponding emissivity: ξ;
The laser of stabilized lasers source 20 transmittings reflexes to infrared sensor 21 through spectroscope 19 and records its initial laser power, and an other road light splitting, to spectroscope 8 and 3, reflexes to infrared sensor 18 finally by infrared radiating body 1 and records reflected optical power.
Step 2, selects temp measuring method: by the emissivity ξ measuring in step 1 and the emissivity threshold values K comparison of setting, if ξ is <K, now adopt single wavelength emission rate modification method thermometric, enter step 5; Otherwise, adopt dual wavelength method thermometric, enter step 3;
Step 1 measurement data 16 is processed the emissivity calculate radiator 1 through processing of circuit unit.Then, with this, select the long temp measuring method of single-double wave.
Infrared radiating body 1 is through a part of light of spectroscope 2 through baffle plate 4, and baffle plate 4 is optical channels of a solenoid actuated, can carry out that survey sensor dark current is measured and emittance gathers by the opening and closing of sequential control baffle plate;
Step 3, measuring radiation object, in the ENERGY E of selected longer far infrared wavelength, if E is less than testing range, now adopts far infrared dual wavelength thermometric to enter step 5; If E is greater than testing range, now carry out step 4;
Then by spectroscope 8, be divided into two-way light, a road is for far infrared dual-wavelength measurement, and a road is for Near-infrared Double wavelength measurement; The first via after spectroscope 10, distinguish again filtered 12 again and 13 filtering after, then by sensor 14 and 15, gathered respectively two-way wavelength and obtain the energy that corresponding dual wavelength calculates;
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy is lower than testing range, enters step 3, otherwise enters step 5;
The second road infrared light that same spectroscope 8 separates, after spectroscope 5, minute filtered 6 and 9 selection Near-infrared Double wavelength are gathered respectively two-way wavelength by sensor 7 and 11 again and obtain corresponding Near-infrared Double wavelength energy;
Step 5 calculates the accurate temperature of Infrared survey, and shows temp measuring method and measure temperature according to different step entrance.
Last this two-way output energy is obtained corresponding temperature-measuring results by signal acquisition process cell processing, and reaches host computer PC by interface circuit 17.Wherein the passage of single wavelength measurement is that the energy that the sensor 15 of the identical wavelength corresponding with filter plate 3 gathers is single wavelength thermometric compatible channels.Equally, when baffle plate 4 is closed, above-mentioned all the sensors records real-time dark current, can revise thermometric, improves accuracy.
Use the temperature measuring equipment of the infrared measurement of temperature method of above-mentioned MOCVD technique growth, comprise: emissivity measurement device, dual-wavelength measurement device and single wavelength measuring apparatus three parts: emissivity measurement device, dual-wavelength measurement device and single wavelength measuring apparatus, it is characterized in that emissivity measurement device part: stabilized lasers source 20 is sent stabilized lasers and reflexed to infrared sensor 21 through spectroscope 19Hou mono-tunnel, top, baffle plate 4 is but moved through electromagnet after reflexing to spectroscope 8 successively in another road, spectroscope 2, after infrared radiating body 1 reflection through spectroscope 2, after filter plate 3, arrive sensor 18.Dual-wavelength measurement device part: infrared radiating body 1 irradiating infrared light is divided into two-way after spectroscope 2, solenoid actuated baffle plate 4, spectroscope 8: the first via is being divided into two-way after spectroscope 10, sensor 15 is arrived after wave plate 12 after filtration in one tunnel, and another road after filtration wave plate 13 gathers respectively far infrared dual wavelength energy to sensor 14; The second tunnel is divided into two-way again through spectroscope 5, and wave plate 6 is to sensor 7 after filtration on a road, and an other road after filtration wave plate 9 collects respectively Near-infrared Double wavelength energy to sensor 11.It is compatible that the sensor 15 of narrating in single wavelength measuring apparatus this partial devices of part and dual-wavelength measurement device gathers light path, and the two shares.
Embodiment bis-:
Embodiment bis-is identical with embodiment mono-, and difference is: referring to Fig. 3, its reflected light measurement of laser of stabilized lasers source 1 transmitting is partly the radiation path compatible measurement being gathered by sensor 15, reaches the object of emissivity measurement.It has saved independent emissivity measurement passage, and other are similarly done compatible channels with other passages and measure passages as: sensor 7,11,14, and all embodiment is considered as same instance therewith.
Claims (6)
1. the infrared measurement of temperature method that MOCVD technique is grown, is characterized in that comprising following steps:
Step 1, measurement of reflectivity: according to the Kirchhoff's theorem of thermal conduction study, for the emissivity ξ of nontransparent testee and reflectivity r's and be 1, that is: ξ=1-r, measures the reflectivity r of object, can calculate corresponding emissivity: ξ;
Step 2, selects temp measuring method: by the emissivity ξ measuring in step 1 and the emissivity threshold values K comparison of setting, if ξ is <K, now adopt single wavelength emission rate modification method thermometric, enter step 5; Otherwise, adopt dual wavelength method thermometric, enter step 3;
Step 3, measuring radiation object, in the ENERGY E of selected longer far infrared wavelength, if E is less than testing range, now adopts far infrared dual wavelength thermometric to enter step 5; If E is greater than testing range, now carry out step 4;
Step 4, carries out dual wavelength thermometric according to Near-infrared Double wavelength radiation energy, if less near-infrared wavelength energy is lower than testing range, enters step 3, otherwise enters step 5;
Step 5 calculates the accurate temperature of Infrared survey, and shows temp measuring method and measure temperature according to different step entrance.
2. the infrared measurement of temperature method of MOCVD technique growth according to claim 1, is characterized in that step 1 is by real-time measurement of reflectivity, to realize the emissivity of indirect measurement object.
3. the infrared measurement of temperature method that MOCVD technique according to claim 1 is grown, the described selection temp measuring method that it is characterized in that step 2 is the size according to the emissivity of testee, described threshold values K according to actual list wavelength thermometric accurately and effectively scope determine.
4. the infrared measurement of temperature method that MOCVD technique according to claim 1 is grown, it is characterized in that step 2 in 4 for the stronger smooth surface of reflection, the bright interference surface that is the growth of MOCVD technique is that judgement adopts single wavelength emission rate modification method thermometric according to threshold values, for the rough surface that scattering is stronger, according to emissivity threshold values K, judges to select temp measuring method.
5. the infrared measurement of temperature method that MOCVD technique according to claim 1 is grown, it is characterized in that infrared double-wave length temperature measurement fraction adopts four different wave lengths described in step 3 and 4, be distributed in two infrared bands near, far away, being distributed in near-infrared band scope is 700nm～1 μ m, and the scope of far infrared band is 1.3 μ m～2.0 μ m.
6. the temperature measuring equipment used of the infrared measurement of temperature method that the MOCVD technique of claim 1 is grown, comprise: emissivity measurement device, dual-wavelength measurement device and single wavelength measuring apparatus three parts, it is characterized in that emissivity measurement device part: stabilized lasers source 20 is sent stabilized lasers and reflexed to infrared sensor 21 through spectroscope 19Hou mono-tunnel, top, baffle plate 4 is but moved through electromagnet after reflexing to spectroscope 8 successively in another road, spectroscope 2, after infrared radiating body 1 reflection through spectroscope 2, after filter plate 3, arrive sensor 18, dual-wavelength measurement device part: infrared radiating body 1 irradiating infrared light is through spectroscope 2, solenoid actuated baffle plate 4, after spectroscope 8, be divided into two-way: the first via is being divided into two-way after spectroscope 10, sensor 15 is arrived after wave plate 12 after filtration in one tunnel, another road after filtration wave plate 13 gathers respectively far infrared dual wavelength energy to sensor 14, the second tunnel is divided into two-way again through spectroscope 5, and wave plate 6 is to sensor 7 after filtration on a road, and an other road after filtration wave plate 9 collects respectively Near-infrared Double wavelength energy to sensor 11.It is compatible that sensor 15 in single wavelength measuring apparatus and dual-wavelength measurement device gathers light path, and the two shares.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300526A (en) * | 2015-09-22 | 2016-02-03 | 南京理工大学 | Radiation temperature measurement method based on primary function multi-wavelength fitting |
| CN111014290A (en) * | 2019-12-13 | 2020-04-17 | 中冶南方工程技术有限公司 | Simple low-cost cold-rolled strip steel infrared temperature measurement method |
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| CN102889934A (en) * | 2011-07-18 | 2013-01-23 | 甘志银 | Method for measuring temperature in real time |
| JP2013092502A (en) * | 2011-10-27 | 2013-05-16 | Jfe Steel Corp | Temperature measuring apparatus and emissivity measuring device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102889934A (en) * | 2011-07-18 | 2013-01-23 | 甘志银 | Method for measuring temperature in real time |
| JP2013092502A (en) * | 2011-10-27 | 2013-05-16 | Jfe Steel Corp | Temperature measuring apparatus and emissivity measuring device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105300526A (en) * | 2015-09-22 | 2016-02-03 | 南京理工大学 | Radiation temperature measurement method based on primary function multi-wavelength fitting |
| CN105300526B (en) * | 2015-09-22 | 2018-05-01 | 南京理工大学 | Method based on basic function multi-wavelength fitting radiation temperature measurement |
| CN111014290A (en) * | 2019-12-13 | 2020-04-17 | 中冶南方工程技术有限公司 | Simple low-cost cold-rolled strip steel infrared temperature measurement method |
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Effective date of registration: 20180731 Address after: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee after: Guangdong RealFaith Semiconductor Equipment Co., Ltd. Address before: 528251 C, first floor, west of Foshan Road, Nansha Road, Guangdong. Patentee before: Gan Zhiyin |
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Address after: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee after: Guangdong Zhongyuan Semiconductor Technology Co.,Ltd. Address before: 528251 1, No. 5, Nanzhou street, Ping Zhou, Nanhai District, Foshan, Guangdong Patentee before: GUANGDONG REAL FAITH SEMICONDUCTOR Co.,Ltd. |