CN109580035A - The sapphire fiber pyrostat and its thermometry of high fringe visibility - Google Patents
The sapphire fiber pyrostat and its thermometry of high fringe visibility Download PDFInfo
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- CN109580035A CN109580035A CN201811479759.7A CN201811479759A CN109580035A CN 109580035 A CN109580035 A CN 109580035A CN 201811479759 A CN201811479759 A CN 201811479759A CN 109580035 A CN109580035 A CN 109580035A
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 102
- 239000010980 sapphire Substances 0.000 title claims abstract description 102
- 239000000835 fiber Substances 0.000 title claims abstract description 90
- 238000004861 thermometry Methods 0.000 title description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000013307 optical fiber Substances 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 230000008054 signal transmission Effects 0.000 claims abstract description 4
- 238000001228 spectrum Methods 0.000 claims description 15
- 230000004927 fusion Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 7
- 238000009529 body temperature measurement Methods 0.000 claims description 6
- 230000001427 coherent effect Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims 7
- 230000003595 spectral effect Effects 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 2
- CRQQGFGUEAVUIL-UHFFFAOYSA-N chlorothalonil Chemical compound ClC1=C(Cl)C(C#N)=C(Cl)C(C#N)=C1Cl CRQQGFGUEAVUIL-UHFFFAOYSA-N 0.000 claims 2
- 238000007526 fusion splicing Methods 0.000 claims 1
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 230000008878 coupling Effects 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000011214 refractory ceramic Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000005457 Black-body radiation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
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Abstract
The invention discloses a kind of sapphire fiber method amber pyrostats of high fringe contrast, including sapphire wafer (1), sapphire lock pin (2) and the sapphire-silica fibre for constituting high-temperature region and the optical signal transmission waveguide of room temperature area, the light that LED light source (9) issues enters pyrostat (8), it is emitted from sapphire fiber end face (15), the illumination after diverging, which is mapped on (1) first reflecting surface (16) of sapphire wafer, occurs first reflection；The second secondary reflection occurs in rest part light transmission to the second reflecting surface of chip (17)；It is coupled in sapphire fiber (4) in the first beam reflected light (11), the first beam reflected light (12) that two surfaces of method Fabry-Parot interferent chamber generate, the double optical fiber interference signals of formation method amber, method amber optical path difference is obtained by spectroscopic methodology demodulated interferential signal, and then counter pushes away temperature.Present invention greatly enhances the fringe visibilities of Fabry-Perot sensor interference signal, while improving the temperature sensitivity and thermometric resolution ratio of sensor.
Description
Technical field
The present invention relates to sensory field of optic fibre, have fiber coupling more particularly to a kind of sapphire fiber pyrostat
Beam splitting designs, the sapphire fiber pyrostat of high fringe visibility is, it can be achieved that in the complicated extreme temperature tested under environment
Monitoring.
Background technique
With aerospace, the rapid development of ic engine industry, the high temperature monitoring technology under extreme condition is proposed more
High requirement.Traditional electric sensor is not able to satisfy measurement under conductive, inflammable, explosive and strong corrosivity adverse circumstances and wants
It asks.High temp sensitive technology based on sapphire fiber is with characteristics such as its resistance to oxidation, high-precision, electromagnetism interferences, in high temperature monitoring
It is played an important role in field.
In recent years it has been proposed that a plurality of types of sapphire fiber sensors realize excessive temperature (1000 DEG C or more)
Measurement, such as sapphire fiber grating type, black body radiation type and Fa Po type sensor.But the indigo plant of sapphire fiber grating type is precious
Stone fibre optical sensor needs to scribe using expensive femto-second laser, and cost is high, and is limited to the biggish numerical value of sapphire fiber
Aperture, Pattern perturbation is serious and measurement accuracy is lower with respect to other methods.Black body radiation type sapphire fiber sensor is based on
Planck blackbody radiation law has good temperature measurement accuracy for (600-1600 DEG C) in high-temperature region；But due to low temperature radiation
Power significantly reduces, and at 600 DEG C hereinafter, the very fast decaying of signal-to-noise ratio, temperature-measuring range is limited, is only used for the temperature prison of high temperature section
It surveys.The sapphire fiber sensor of method amber type has extremely wide measurement range, can be ground according to flexible design is required using tradition
Technique production, can be mass, cost is relatively low, therefore be with a wide range of applications.But since sapphire fiber is using brilliant
The production of body growth pattern, is limited in length, comes in the world generally by sapphire fiber and the mode of silica fibre welding
Realize remote recording, i.e. high-temperature region uses sapphire fiber, and room temperature area lengthens transmission range using silica fibre.In heterogeneous light
In fine coupling process, in order to reach coupling efficiency as high as possible, need to throw sapphire fiber and silica fibre end face
Light processing is to reduce the scattering loss of fusion point.This is conducive to improve couples optical energy rate, but precise polished fiber cross-sections meeting
A background reflected light is introduced in transmission optical path, is superimposed upon in the output signal of sensor, reduces the interference item of sensor
Line visibility, and then demodulation accuracy is impacted.Meanwhile in order to guarantee higher fringe visibility, to sensor production work
Skill requirement is very high, and chip must be strictly parallel with fiber end face, this proposes very high request to the precision for gripping original part.
Summary of the invention
For traditional sapphire fiber sensor, there are the deficiency that fringe contrast and coupling mass can not get both, the present invention
Propose the sapphire fiber pyrostat and its thermometry of high fringe visibility, by double light path separation input with
The direct current background amount reflected in signal light is filtered out, it is visible with high striped to solve heterogeneous fiber coupling quality by output signal light
Contradiction between degree improves sensor efficient coupling intensity and visibility of interference fringes.
The sapphire fiber method amber pyrostat of high fringe contrast of the invention, which includes sapphire wafer
1, sapphire lock pin 2 and sapphire-silica fibre of composition high-temperature region and the optical signal transmission waveguide of room temperature area；Wherein, Lan Bao
The circular section of stone chip 1 and sapphire lock pin 2 is adjacent to and is fixed using refractory ceramics glue 3；Sapphire-the silica fibre is by indigo plant
Jewel optical fiber 4 and the silica fibre 5 cut flat with are formed by 6 welding of optical fiber fusion welding point between end face,；The sapphire-
Silica fibre is inserted into the mesoporous of the sapphire lock pin 2 from 4 one end of sapphire fiber, in sapphire fiber 4 and sapphire wafer 1
Between transducing signal the best of it use refractory ceramics glue 3 fixed；Sapphire-the silica fibre passes through from 5 one end of silica fibre
Optical patchcord 7 is separately connected LED light source 9, spectrometer 10, realizes that the branch of input waveguide and output waveguide is transmitted；It is described blue precious
Two reflecting surface mechanics Fabry-Parot interferent chambers of stone chip 1.
The thermometry that sapphire fiber method amber pyrostat using high fringe contrast of the invention is realized,
Method includes the following steps:
In running order pyrostat 8 is connected by optical patchcord 7 with LED light source 9, spectrometer 10；LED
The light that light source 9 issues enters pyrostat 8 by optical patchcord 7, by heterogeneous optical fiber fusion welding point 6 from sapphire fiber end face
15 outgoing, the illumination after diverging, which is mapped on 1 first reflecting surface 16 of sapphire wafer, occurs first reflection, forms the reflection of the first beam
Light 11；The second secondary reflection occurs in rest part light transmission to the second reflecting surface of chip 17, is formed and carries optical path difference information
Second beam reflected light 12；It is coupled in the first beam reflected light 11, the first beam reflected light 12 that two surfaces of method Fabry-Parot interferent chamber generate
It is exported into sapphire fiber 4, forms the double optical fiber interference signals 18 of method amber, i.e. the first beam reflected light 11, the second beam reflected light 12
Optical path difference between two beam reflected lights changes therewith, so as to cause the variation of interference signal；The interference signal 18 passes through
Sapphire fiber 4, silica fibre 5, optical patchcord 7 pass spectrometer 10 back again；
From spectrometer collection to interference spectrum signal indicate are as follows:
Wherein, k=2 π/λ；IB(k) the direct current background amount in interference spectrum signal, S are indicated1(k),S2(k) indicate that optical fiber connects
The two beam reflected lights received, Δ indicate the optical path difference between two beam coherent lights,Indicate initial optical path difference, L, n indicate sapphire
The thickness and refractive index of chip；
When locating environment temperature changes, the thickness and Refractive Index of Material of sapphire wafer change:
The formula that sapphire wafer refractive index varies with temperature indicates are as follows:
n(T)850nm=a0+a1T+a2T2
Wherein, T is Celsius temperature, n (T)850nmFor the sapphire wafer Refractive Index of Material under 850nm；
Thermal expansion function representation of the sapphire material along C axis are as follows:
L (T)=[b0+b1T+b2T2+b3T3]×L0
Wherein, T indicates that kelvin degree, L (T) are indicated in temperature T and initial length L0Under the conditions of initial length；
As known from the above, optical path difference Δ=2n (T) L (T) is expressed as the quintic algebra curve relationship of temperature T, passes through spectroscopic methodology
Demodulated interferential signal obtains method amber optical path difference, and then counter pushes back temperature locating for sapphire wafer.
In described the step of obtaining the information of method amber optical path difference by spectroscopic methodology demodulated interferential signal, demodulation accuracy is depended on
The acquisition resolution of interference spectrum and accurately seeking for fringe peak position take: spectra collection resolution ratio is determined by spectrometer resolution ratio
It is fixed, peak position accurately seek take it is closely related with interference spectrum fringe visibility, thus, in actual measurement, interference spectrum item
Line visibility further indicates that are as follows:Wherein FVIndicate the interference fringe in background light signal
Visibility.
The present invention has the positive effect that:
1, by the utilization to fiber coupling beam splitting model, input optical fibre end face and heterogeneous optical fiber fusion welding point are introduced anti-
It penetrates bias light to filter out from output signal, realize input optical signal and exports the abundant removing of interference signal, eliminate direct current back
Influence of the light to interference signal is scattered at scape item and heterogeneous optical fiber fusion welding point, greatly improves Fabry-Perot sensor interference signal
Fringe visibility overcomes conditioning each other for fusion point coupling mass and high fringe visibility, improves the temperature spirit of sensor
Sensitivity and thermometric resolution ratio；
2, by optimization amber sensor light line structure, direct current bias light and scattering in output signal are fundamentally being filtered out
Light is interfered, the stability and resolution ratio of sensor in the presence of a harsh environment are improved, is the height under extreme high ambient light influence condition
Temperature monitoring provides effective means；
3, when measurement temperature increases, when environment stray light is affected to sensor signal, higher fringe visibility can
To improve the noise tolerance that peak value accurately identifies.Complexity is measured under environment, the accuracy and resolution ratio for improving sensor have
Significance.
Detailed description of the invention
Fig. 1 is the sapphire fiber method amber pyrostat structural schematic diagram of high fringe visibility of the invention；
Fig. 2 is the optic path schematic diagram of the sapphire fiber method amber pyrostat of high fringe visibility of the invention；
Fig. 3 is to divide space optical path to expand on the sapphire fiber method amber high temp sensitive head of high fringe visibility of the invention
(a), fiber coupling model schematic (b)；
Fig. 4 is the laboratory testing system figure of the sapphire fiber method amber pyrostat of high fringe visibility of the invention
Fig. 5 is the sapphire fiber method amber pyrostat and conventional single fiber Fa Pogao of high fringe visibility of the invention
Temperature sensor comparative experiments room test result, wherein (a) is thermometric resolution ratio, it (b) is measurement error；
Fig. 6 is the sapphire fiber method amber pyrostat and conventional single fiber sensor of high fringe visibility of the invention
Temperature measurement stability comparative test result figure.
In figure: 1, sapphire wafer, 2, sapphire lock pin, 3, refractory ceramics glue, 4, sapphire fiber, 5, silica fibre,
6, heterogeneous optical fiber fusion welding point, 7, optical patchcord, 8, pyrostat, 9, LED light source, 10, spectrometer, the 11, first beam reflected light,
12, the second beam reflected light, 13, input light beam, 14, welding point scattering light, 15, sapphire fiber end face, the 16, first reflection table
Face, the 17, second reflecting surface, 18, interference signal, 19, direct current bias light, 20, high temperature Muffle furnace.
Specific embodiment
Technical solution of the present invention is described in further detail below in conjunction with example.
As shown in Figure 1, the structure of the sensor includes sapphire wafer (1), sapphire lock pin (2), sapphire fiber (4)
And silica fibre (5)；Wherein, the circular section of sapphire wafer (1) and sapphire lock pin (2) is adjacent to, and is passed through refractory ceramics glue (3)
It is fixed, using the both ends of the surface of optic fiber polishing machine grinding sapphire fiber (3), reach certain finish.Then it and cuts flat with
Silica fibre (5) end face carry out welding, for constructing high-temperature region and the optical signal transmission waveguide of room temperature area.Two weldings are good
Sapphire-silica fibre end face alignment draw close, from sapphire fiber (4) one end be inserted into sapphire lock pin (2) mesoporous, two stones
English optical fiber (5) end face passes through optical patchcord (7) connection LED light source (9) and spectrometer (10) respectively, realizes input waveguide and output
The branch of waveguide is transmitted.The phase between two sapphire fibers (4) and sapphire wafer (1) is realized by accurate displacement console
To position, finds and sense its signal the best of it, and is fixed using refractory ceramics glue (3).Two reflectings surface of sapphire wafer (1)
Mechanics Fabry-Parot interferent chamber is realized as temperature-sensing element (device) and is sensed；
When working sensor, pyrostat (8) are passed through into optical patchcord (7) and LED light source (9), spectrometer (10) phase
Connection.The light that LED light source (9) issues enters sensor by optical patchcord (7), by heterogeneous optical fiber fusion welding point (6), from blue treasured
Stone fiber end face (15) outgoing, it is anti-for the first time that the illumination after diverging is mapped to generation on (1) first reflecting surface (16) of sapphire wafer
It penetrates, forms the first beam reflected light (11)；The second secondary reflection occurs in rest part light transmission to the second reflecting surface of chip (17),
Form the second beam reflected light (12) for carrying optical path difference information；Reflected light (11-12) coupling generated by two surface of method amber chip
Into output sapphire fiber, the double fiber optic interferometrics of method amber are formed.Interference signal (18) passes through sapphire fiber (4), silica fibre
(5), optical patchcord (7) passes spectrometer (10) back.When the environment temperature locating for the sensor changes, the thickness of temperature-sensitive chip
It changes with Refractive Index of Material, the optical path difference between two beam reflected lights will change, so as to cause the change of interference signal
Change.Pass through the information of the available method amber optical path difference of demodulated interferential signal.It is counter in turn to push back the letter of temperature locating for sapphire wafer
Breath；
From spectrometer collection to interference spectrum signal indicate are as follows:
Wherein, k=2 π/λ；IB(k) the direct current background amount in signal is indicated, mainly by welding point scattering and sapphire fiber
Background reflection in end face is constituted；S1(k),S2(k) the two beam reflected lights that optical fiber receives are indicated；Δ indicates between two beam coherent lights
Optical path difference, that is, 2nL；Indicate initial optical path difference.Wherein, since the thickness L and refractive index n of method amber chip are temperature
Function, so Δ indicates the function of temperature.
The formula that sapphire method amber chip varies with temperature indicates are as follows:
n(T)850nm=a0+a1T+a2T2
Wherein, T indicates Celsius temperature, n (T)850nmIndicate the sapphire wafer Refractive Index of Material sapphire material under 850nm
Expecting the thermal expansion function along C axis can indicate are as follows:
L (T)=[b0+b1T+b2T2+b3T3]×L0
Wherein, T indicates that kelvin degree, L (T) are indicated in temperature T and initial length L0Under the conditions of initial length.By with
Above it is found that optical path difference Δ=2n (T) L (T) can be expressed as the quintic algebra curve relationship of temperature T.It therefore can be by measuring light
Path difference, it is anti-to release measurement target temperature.
The precision of spectroscopic methodology demodulated interferential optical path difference depends on acquisition resolution and the fringe peak position of interference spectrum
It accurately seeks and taking.Spectra collection resolution ratio determines by spectrometer resolution ratio, peak position accurately seek take it is visible with interference spectrum striped
It spends closely related.Fringe visibility FVIt is conventionally used to indicate the visibility of the interference fringe in background light signal, and is defined as follows:
In actual measurement, fringe visibility can further indicate that are as follows:
Because of S1(k),S2(k) variation is relatively small, is transmitted by optic fibre light path branch, reasonably applies coupling technique,
The direct current bias light I in the interference signal of receiving end can effectively be filtered outB(k), visibility of interference fringes is significantly improved.According to white
Light method amber optical path difference demodulation principle is it is found that high fringe visibility helps to improve peak-seeking precision, and then improves temperature measurement accuracy and survey
Warm resolution ratio.
Embodiment 1:
As shown in figure 4, by LED wideband light source (9) output wide spectrum optical through optical patchcord (7), multimode silica fibre (5),
Heterogeneous optical fiber fusion welding point (6), sapphire fiber (4) import in pyrostat (8), and reflection signal light successively passes through sapphire light
Fine (4), heterogeneous optical fiber fusion welding point (6), silica fibre (5), optical patchcord (7) are received by spectrometer.Pyrostat (8) is placed
It is intracavitary in the tubular type of high temperature Muffle furnace (20), it is that sensor applies a temperature variable by adjusting Muffle furnace chamber temperature, surveys
Measuring range is 100-1080 DEG C.The variation of temperature causes sapphire wafer (1) light refractive index and material dilation, causes method
The variation of amber optical path difference, by calculating the received interference spectrum information of spectrometer (10), so that it may obtain measurement environment
At a temperature of sensor light path difference.Since sensor light path difference and sapphire wafer refractive index and chip thermal expansion length have admittedly
Determine relationship delta=2n (T) L (T), sensing real time temperature is obtained with by counter push away.
Fig. 5 is the test result under laboratory environment, and Fig. 5 (a) is high fringe visibility sensor and traditional sapphire light
Fine Fabry-Perot sensor, for stepping, acquires 100 frame data with 100 DEG C respectively at each temperature, do each temperature obtained after standard deviation
Optical path difference undulate quantity under degree, also referred to as the thermometric resolution ratio of temperature sensor.It can be seen that the temperature sensing of high fringe visibility
Device has higher thermometric resolution ratio due to higher signal quality.Fig. 5 (b) shows high fringe visibility sensor and tradition
Sapphire fiber Fabry-Perot sensor temperature-measuring results and the interior difference that temperature is set of high temperature Muffle furnace, and sensing at various temperatures
The temperature measurement error of device.High fringe visibility sensor temperature measurement accuracy is ± 1 DEG C, and comparison traditional sensors have higher measurement essence
Degree.
Embodiment 2:
1000 DEG C are set by high temperature Muffle furnace, high fringe visibility sensor and traditional sapphire fiber method amber are sensed
Device is placed sequentially in the intracavitary same position of high temperature furnace, 1 hour data of continuous acquisition after ambient temperature-stable, and analyte sensors are surveyed
Temperature stability, experimental result are as shown in Figure 6.It can be seen from the figure that relative to conventional single fiber sensor, high fringe visibility
Sapphire fiber Fabry-Perot sensor has better temperature stability.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110501090A (en) * | 2019-08-12 | 2019-11-26 | 北京航空航天大学 | Optical fiber F-P high temperature sensor based on sapphire wafer-boron nitride thin film and its preparation method and temperature sensing device |
| CN110617901A (en) * | 2019-09-25 | 2019-12-27 | 北京航空航天大学 | Sapphire optical fiber F-P high-temperature sensor with inclined reflection surface, preparation method and temperature sensing system |
| CN111175253A (en) * | 2020-01-08 | 2020-05-19 | 天津大学 | Hybrid sapphire crystal dual-Fabric cavity fiber refractive index sensor and measurement method |
| CN111982346A (en) * | 2019-05-24 | 2020-11-24 | 武汉理工大学 | A high-sensitivity fiber-optic temperature sensor |
| CN113624362A (en) * | 2021-08-16 | 2021-11-09 | 哈尔滨工程大学 | A fiber-optic Fabry-Perot interferometric high temperature sensor based on silicon carbide microcavity |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070223000A1 (en) * | 2004-04-08 | 2007-09-27 | Council For The Central Laboratory Of The Research Councils Clik Knowledge Transfer Daresbury Labor | Optical Sensor |
| CN102192799A (en) * | 2010-03-12 | 2011-09-21 | 东京毅力科创株式会社 | Probe for temperature measurement, temperature measuring system and temperature measuring method using the same |
| CN103913254A (en) * | 2014-04-28 | 2014-07-09 | 武汉理工大学 | Sapphire optical fiber high-temperature sensor and manufacturing method thereof |
| US20140318273A1 (en) * | 2013-04-25 | 2014-10-30 | Sentek Instrument LLC | Sapphire sensor for measuring pressure and temperature |
| CN105806414A (en) * | 2016-04-26 | 2016-07-27 | 浙江大学 | Optical fiber temperature and humidity sensor, temperature and humidity sensing system and temperature and humidity regulating method |
| CN106066215A (en) * | 2016-07-29 | 2016-11-02 | 武汉理工大学 | A kind of sapphire pyrostat |
| CN206618510U (en) * | 2017-04-11 | 2017-11-07 | 湖北师范大学 | A kind of transmission-type fibre optic temperature sensor of multi-core fiber dislocation welding |
| CN108332876A (en) * | 2018-01-30 | 2018-07-27 | 华中科技大学 | A kind of fibre optic temperature sensor |
-
2018
- 2018-12-05 CN CN201811479759.7A patent/CN109580035B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070223000A1 (en) * | 2004-04-08 | 2007-09-27 | Council For The Central Laboratory Of The Research Councils Clik Knowledge Transfer Daresbury Labor | Optical Sensor |
| CN102192799A (en) * | 2010-03-12 | 2011-09-21 | 东京毅力科创株式会社 | Probe for temperature measurement, temperature measuring system and temperature measuring method using the same |
| US20140318273A1 (en) * | 2013-04-25 | 2014-10-30 | Sentek Instrument LLC | Sapphire sensor for measuring pressure and temperature |
| CN103913254A (en) * | 2014-04-28 | 2014-07-09 | 武汉理工大学 | Sapphire optical fiber high-temperature sensor and manufacturing method thereof |
| CN105806414A (en) * | 2016-04-26 | 2016-07-27 | 浙江大学 | Optical fiber temperature and humidity sensor, temperature and humidity sensing system and temperature and humidity regulating method |
| CN106066215A (en) * | 2016-07-29 | 2016-11-02 | 武汉理工大学 | A kind of sapphire pyrostat |
| CN206618510U (en) * | 2017-04-11 | 2017-11-07 | 湖北师范大学 | A kind of transmission-type fibre optic temperature sensor of multi-core fiber dislocation welding |
| CN108332876A (en) * | 2018-01-30 | 2018-07-27 | 华中科技大学 | A kind of fibre optic temperature sensor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111982346A (en) * | 2019-05-24 | 2020-11-24 | 武汉理工大学 | A high-sensitivity fiber-optic temperature sensor |
| CN110501090A (en) * | 2019-08-12 | 2019-11-26 | 北京航空航天大学 | Optical fiber F-P high temperature sensor based on sapphire wafer-boron nitride thin film and its preparation method and temperature sensing device |
| CN110617901A (en) * | 2019-09-25 | 2019-12-27 | 北京航空航天大学 | Sapphire optical fiber F-P high-temperature sensor with inclined reflection surface, preparation method and temperature sensing system |
| CN111175253A (en) * | 2020-01-08 | 2020-05-19 | 天津大学 | Hybrid sapphire crystal dual-Fabric cavity fiber refractive index sensor and measurement method |
| CN111175253B (en) * | 2020-01-08 | 2022-08-23 | 天津大学 | Mixed sapphire crystal double-Fabry-Perot cavity optical fiber refractive index sensor and measuring method |
| CN113624362A (en) * | 2021-08-16 | 2021-11-09 | 哈尔滨工程大学 | A fiber-optic Fabry-Perot interferometric high temperature sensor based on silicon carbide microcavity |
| CN113624362B (en) * | 2021-08-16 | 2024-06-07 | 哈尔滨工程大学 | Optical fiber Fabry-Perot interference high-temperature sensor based on silicon carbide microcavity |
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