SU1545866A1 - Method for determining photoelectric parameters of noncompensated impurity semiconductors - Google Patents

Method for determining photoelectric parameters of noncompensated impurity semiconductors

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Publication number
SU1545866A1
SU1545866A1 SU4362221/25A SU4362221A SU1545866A1 SU 1545866 A1 SU1545866 A1 SU 1545866A1 SU 4362221/25 A SU4362221/25 A SU 4362221/25A SU 4362221 A SU4362221 A SU 4362221A SU 1545866 A1 SU1545866 A1 SU 1545866A1
Authority
SU
USSR - Soviet Union
Prior art keywords
frequency
photoconductance
holes
electrons
specimen
Prior art date
Application number
SU4362221/25A
Other languages
Russian (ru)
Inventor
М.П. Петров
С.И. Степанов
Г.С. Трофимов
И.А. Соколов
Original Assignee
Физико-технический институт им.А.Ф.Иоффе
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Физико-технический институт им.А.Ф.Иоффе filed Critical Физико-технический институт им.А.Ф.Иоффе
Priority to SU4362221/25A priority Critical patent/SU1545866A1/en
Application granted granted Critical
Publication of SU1545866A1 publication Critical patent/SU1545866A1/en

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Abstract

FIELD: semiconductor engineering. SUBSTANCE: specimen is irradiated by reference and signal light beam phase modulated at frequency ω. Interference pattern is formed on specimen surface. Current induced in specimen at frequency w depending on spatial interference frequency K is recorded. Frequency w is selected between 0.1 min (τone τ) > ω > 10τ, where τ, τ, is mean lifetime of electrons and holes, respectively, τis dielectric relaxation time of illuminated semiconductor. Mean diffusion lengths of electrons and holes, as well as electron-to-hole photoconductance ratio are found by calculation. EFFECT: provision for determination of mean diffused lengths of photoinduced electrons and holes and of electron-to-hole photoconductance ratio of semiconductors with bipolar photoconductance simultaneously. 2 dwg
SU4362221/25A 1988-01-13 1988-01-13 Method for determining photoelectric parameters of noncompensated impurity semiconductors SU1545866A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4362221/25A SU1545866A1 (en) 1988-01-13 1988-01-13 Method for determining photoelectric parameters of noncompensated impurity semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4362221/25A SU1545866A1 (en) 1988-01-13 1988-01-13 Method for determining photoelectric parameters of noncompensated impurity semiconductors

Publications (1)

Publication Number Publication Date
SU1545866A1 true SU1545866A1 (en) 1995-08-27

Family

ID=60528836

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4362221/25A SU1545866A1 (en) 1988-01-13 1988-01-13 Method for determining photoelectric parameters of noncompensated impurity semiconductors

Country Status (1)

Country Link
SU (1) SU1545866A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006093399A1 (en) * 2005-03-01 2006-09-08 Kestutis Jarasiunas Holographic device and method for determination of photoelectric parameters of a semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006093399A1 (en) * 2005-03-01 2006-09-08 Kestutis Jarasiunas Holographic device and method for determination of photoelectric parameters of a semiconductor

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