SU1545866A1 - Method for determining photoelectric parameters of noncompensated impurity semiconductors - Google Patents
Method for determining photoelectric parameters of noncompensated impurity semiconductorsInfo
- Publication number
- SU1545866A1 SU1545866A1 SU4362221/25A SU4362221A SU1545866A1 SU 1545866 A1 SU1545866 A1 SU 1545866A1 SU 4362221/25 A SU4362221/25 A SU 4362221/25A SU 4362221 A SU4362221 A SU 4362221A SU 1545866 A1 SU1545866 A1 SU 1545866A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- frequency
- photoconductance
- holes
- electrons
- specimen
- Prior art date
Links
Abstract
FIELD: semiconductor engineering. SUBSTANCE: specimen is irradiated by reference and signal light beam phase modulated at frequency ω. Interference pattern is formed on specimen surface. Current induced in specimen at frequency w depending on spatial interference frequency K is recorded. Frequency w is selected between 0.1 min (τone τ) > ω > 10τ, where τ, τ, is mean lifetime of electrons and holes, respectively, τis dielectric relaxation time of illuminated semiconductor. Mean diffusion lengths of electrons and holes, as well as electron-to-hole photoconductance ratio are found by calculation. EFFECT: provision for determination of mean diffused lengths of photoinduced electrons and holes and of electron-to-hole photoconductance ratio of semiconductors with bipolar photoconductance simultaneously. 2 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4362221/25A SU1545866A1 (en) | 1988-01-13 | 1988-01-13 | Method for determining photoelectric parameters of noncompensated impurity semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4362221/25A SU1545866A1 (en) | 1988-01-13 | 1988-01-13 | Method for determining photoelectric parameters of noncompensated impurity semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1545866A1 true SU1545866A1 (en) | 1995-08-27 |
Family
ID=60528836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4362221/25A SU1545866A1 (en) | 1988-01-13 | 1988-01-13 | Method for determining photoelectric parameters of noncompensated impurity semiconductors |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1545866A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006093399A1 (en) * | 2005-03-01 | 2006-09-08 | Kestutis Jarasiunas | Holographic device and method for determination of photoelectric parameters of a semiconductor |
-
1988
- 1988-01-13 SU SU4362221/25A patent/SU1545866A1/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006093399A1 (en) * | 2005-03-01 | 2006-09-08 | Kestutis Jarasiunas | Holographic device and method for determination of photoelectric parameters of a semiconductor |
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