WO2006053483A1 - An infrared receiver - Google Patents

An infrared receiver Download PDF

Info

Publication number
WO2006053483A1
WO2006053483A1 PCT/CN2005/001886 CN2005001886W WO2006053483A1 WO 2006053483 A1 WO2006053483 A1 WO 2006053483A1 CN 2005001886 W CN2005001886 W CN 2005001886W WO 2006053483 A1 WO2006053483 A1 WO 2006053483A1
Authority
WO
WIPO (PCT)
Prior art keywords
bracket
infrared receiver
substrate
cover
cover plate
Prior art date
Application number
PCT/CN2005/001886
Other languages
English (en)
French (fr)
Inventor
Yaohao Wang
Fubo Fang
Youmin Li
Laihu Miao
Original Assignee
Yaohao Wang
Fubo Fang
Youmin Li
Laihu Miao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaohao Wang, Fubo Fang, Youmin Li, Laihu Miao filed Critical Yaohao Wang
Publication of WO2006053483A1 publication Critical patent/WO2006053483A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the invention relates to an electronic component, and in particular to an infrared receiver.
  • infrared remote control technology has a wide range of applications, from various toys to various home appliances, to a variety of industrial production, testing, using infrared remote control technology.
  • infrared remote control technology As the electromagnetic environment becomes more and more complicated, the use of infrared remote control technology has placed increasing demands on the anti-jamming capability, electromagnetic compatibility, sensitivity, reliability and other characteristics of related devices.
  • the infrared receiver is one of the key components in the infrared remote control system, and its performance determines the performance of the infrared remote control system.
  • One way is to add a metal shield to the outer surface of the infrared receiver device.
  • the disadvantages of this method are: Increase the volume of the infrared receiver device;
  • the infrared receiver device has a flexible and diverse shape, and the metal shield is The shape cannot be completely matched with the infrared receiver device, resulting in waste of the shape design of the infrared receiver device; the metal shield is susceptible to corrosion and rust in a harsh environment, and is likely to cause device failure.
  • Another way is to improve the internal structure of the infrared receiver.
  • the patent number is 02311316.1, and the application date is February 8, 2003.
  • the invention name is the patent of the infrared receiver inner shielding device.
  • a structure is disclosed.
  • the shielding cover has a window in the middle, and the window has a shielding net. On the bottom plate.
  • the shortcoming of the structure is that the bottom plate and the shielding cover are connected by riveting, which is inconvenient in processing and rework, and causes the bracket to be bulky; most of the front end has no encapsulation structure, and the light leakage is serious and the anti-interference performance of the device is seriously serious. influences.
  • the object of the present invention is to provide an infrared receiver with strong anti-interference ability, high sensitivity and reliability, simple processing, low cost and high cost performance in order to solve the above-mentioned deficiencies. Confirmation The present invention achieves the above objects by the following technical solutions:
  • the invention comprises a bracket, a photosensitive chip, an amplifying circuit, a wire and a packaging material; the photosensitive chip and the amplifying circuit are placed in the bracket, and the photosensitive chip, the amplifying circuit and the corresponding electrode of the bracket are connected to each other through a wire, and the packaging material will be the bracket, the photosensitive chip, and the amplification
  • the circuit and the wire encapsulation are composed of a substrate and a cover plate, and at least three pins are arranged at one end of the substrate, and the cover plate is fastened and assembled on the substrate; the corresponding sides of the cover plate and the substrate are folded downward, and The two sides of the folded-up substrate are in contact with each other, and the front end of the cover plate is also folded downward; the width of the two sides of the support substrate is the same, and the width of the two sides of the cover plate is folded to match the width of the two sides of the substrate, and the cover plate is adapted.
  • the lower folded portion is located outside the folded portion of the corresponding side of the substrate, and at least one protrusion is disposed on each of the folded side surfaces of the cover plate, and a corresponding hole is also disposed in the corresponding portion of the substrate, and the protrusion penetrates into the hole to realize the cover plate and
  • the connection of the substrate; the front surface of the bracket cover is provided with a small window, and the shape of the small window can be set to a cross shape, a grid shape, a strip shape, a comb shape, a zigzag shape; With gold wire.
  • the invention improves the internal structure of the infrared receiver, so that the internal components and circuits of the infrared receiver are in a complete shielding environment, which can effectively enhance the anti-interference ability and electromagnetic compatibility of the infrared receiver, and has the advantages of simple structure and low production cost. .
  • FIG. 1 is a schematic view of the external structure of the present invention
  • Figure 2 is a partial cross-sectional view showing the internal structure of the present invention.
  • Figure 3 is a cross-sectional view of the internal structure of the longitudinal section of the present invention.
  • Figure 4 is a schematic view showing the structure of the stent strip of the present invention.
  • the present invention mainly comprises a bracket 1 , a photosensitive chip 2 , an amplifying circuit 3 , a wire 4 , and a packaging material 5 .
  • the photosensitive chip 2 and the amplifying circuit 3 are placed in the bracket 1 and bonded by Fixed together with the bracket 1, the wire of the embodiment is a gold wire 4, and the photosensitive chip 2 is placed.
  • the main circuit 3 and the corresponding electrodes of the bracket 1 are connected to each other by a gold wire 4, and the encapsulating material 5 encloses the bracket 1, the photosensitive chip 2, the amplifying circuit 3, and the gold wire 4;
  • the bracket 1 is composed of a base plate 13 and a cover plate 12, At least one lead 11 is disposed at one end of the substrate 13, and the cover 12 is mounted on the substrate 13.
  • the corresponding sides of the cover 12 and the substrate 13 are folded downward, and are in contact with the two sides of the substrate 13 folded.
  • the front end of the 12 is also folded downward; the width of the two sides of the bracket substrate 12 is the same, and the width of the two sides of the cover 12 is adapted to the width of the two sides of the substrate 13.
  • the lower portion of the cover 12 is located on the substrate 13.
  • the outer side of the corresponding side folded portion has at least one protrusion on each of the folded side surfaces of the cover plate 12, and a corresponding hole of the substrate 13 has a hole corresponding thereto, and the protrusion penetrates into the hole to realize the connection between the cover plate 12 and the substrate 13;
  • the front surface of the cover 12 is provided with a small window 6, and the small window 6 is shaped like a comb; three pins protrude from the outer package encapsulating material 5.
  • the shape of the small window 6 may also be set to a cross shape, a mesh shape, a strip shape, or a zigzag shape.
  • a bracket strip is formed by M rows and N rows of brackets, wherein M 1, N ⁇ l , all processing processes are performed based on the bracket strips, as shown in Fig. 4.
  • a photosensitive chip is placed in each of the holders 2.
  • the adhesive is placed at the position of the amplifying circuit chip 3, and then the photosensitive chip 2, the amplifying circuit chip 3 is placed in a corresponding position.
  • the bond alloy wire 4 connects the photosensitive chip 2, the amplifying circuit chip 3 and the corresponding electrode of the bracket 1; the cover plate 12 is covered, and the bracket strip is placed in the potting mold, and then An appropriate amount of the encapsulating material 5 is injected into the mold strip; after the encapsulating material 5 is completely cured, the mold strip is removed, and the infrared receiver device is formed after the rib is formed.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Description

一种红外接收器 技术领域
本发明涉及一种电子元器件， 具体是涉及一种红外接收器。
背景技术
在现实生活中红外遥控技术有着广泛的应用， 从各种玩具到各种家 用电器， 再到多种工业生产、测试， 都采用了红外遥控技术。 由于电磁环 境变得越来越复杂，在使用红外遥控技术时对相关器件的抗干扰能力、电 磁兼容能力、灵敏度、可靠性等特性提出了越来越高的要求。红外接收器 是红外遥控系统中的关键元器件之一， 其性能决定着红外遥控系统的性 能。 目前有两种方式来提高红外接收器的抗干扰能力、 电磁兼容能力， 并 提高其灵敏度和可靠性。一种方式是在红外接收器器件的外表面附加一层 金属屏蔽罩， 采用此种方式的缺陷在于： 增大了红外接收器器件的体积; 红外接收器器件外形灵活多样，而金属屏蔽罩的外形无法跟红外接收器器 件完全匹配，造成红外接收器器件外形设计的浪费；金属屏蔽罩在恶劣的 使用环境中容易受到腐蚀、生锈， 容易造成器件的失效。另一种方式是改 善红外接收器内部结构。 如专利号为 03211316.1， 申请日为 2003年 2月 8日， 发明名称为红外接收器内屏蔽装置的专利， 公开了一种结构， 屏蔽 盖中间幵有窗口， 窗口内有屏蔽网， 屏蔽盖装配于底板上。该结构的不足 在于，底板和屏蔽盖采用铆接的方式连接，加工和返修不方便且造成支架 体积庞大；其前端有大部分区域未形成包封结构，漏光严重且对影响器件 抗干扰性能有严重影响。
发明内容
本发明的目的就是为了解决上述之不足而提供一种抗干扰能力 强、 灵敏度和可靠性高且加工简单、 成本低廉、 性价比高的红外接收器。 确认本 本发明是通过下述技术方案来实现上述目的：
本发明包括支架、光敏芯片、放大电路、导线、封装材料； 光敏芯片、 放大电路置于支架中，光敏芯片、放大电路及支架的相应电极通过导线相 互连接， 封装材料将支架、 光敏芯片、放大电路、 导线包封， 支架由基板 和盖板两部分组成，在基板的一端设置至少三条引脚，盖板扣接装配在基 板之上； 盖板与基板相应的两侧向下折， 并与基板折起的两侧面相接触， 盖板的前端也向下折；支架基板两侧所折起的宽度相同，盖板两侧折下的 宽度与基板两侧折起的宽度相适应，盖板下折部分位于基板相应侧面折起 部分的外部，盖板每个折下的侧面上还设置有至少一个突起，而基板相应 部位也设置有一孔与其相适应，突起穿入孔中实现盖板和基板的连接；支 架盖板正面设置有小窗，小窗形状可设置为十字状、网格状、条状、梳状、 锯齿状； 导线可以采用金线。
本发明改善了红外接收器的内部结构，使红外接收器内部元器件及电 路处于一个完整的屏蔽环境中，可以有效增强红外接收器的抗干扰能力和 电磁兼容能力， 而且结构简单、 生产成本低廉。
附图说明
以下结合附图和具体实施例对本发明作进一步说明- 图 1是本发明外部结构示意图；
图 2为本发明局部剖视内部结构示意图；
图 3为本发明纵向剖视内部结构中心剖面图；
图 4为本发明的支架条结构示意图。
具体实施例
如图 1、 图 2、 图 3所示， 本发明主要包括支架 1、 光敏芯片 2、 放大电路 3、 导线 4、 封装材料 5， 光敏芯片 2、 放大电路 3置于支架 1中 并通过粘接与支架 1固定在一起， 本实施例导线为金线 4， 光敏芯片 2、 放 大电路 3及支架 1的相应电极通过金线 4相互连接， 封装材料 5将支架 1、 光敏芯片 2、 放大电路 3、 金线 4包封； 支架 1由基板 13和盖板 12两部分 组成，在基板 13的一端设置至少三条引脚 11，盖板 12装配在基板 13之上， 盖板 12与基板 13相应的两侧向下折， 并与基板 13折起的两侧面相接触， 盖板 12的前端也向下折； 支架基板 12两侧所折起的宽度相同， 盖板 12两 侧折下的宽度与基板 13两侧折起的宽度相适应， 盖板 12下折部分位于基 板 13相应侧面折起部分的外部， 盖板 12每个折下的侧面上至少有一个突 起， 而基板 13相应部位有一孔与其相适应， 突起穿入孔中实现盖板 12和 基板 13的连接； 支架盖板 12正面设置有小窗 6， 小窗 6形状为梳状； 有三 只引脚伸出于外围包封装材料 5之外。 所述小窗 6的形状也可设置为十字 状、 网格状、 条状、 锯齿状。
本发明采用如下的加工过程完成：先由 M行和 N列支架构成一个支架 条， 其中 M 1， N^ l , 所有的加工过程基于支架条进行， 如图 4所示。 在每个支架 1中放置光敏芯片 2、放大电路芯片 3的位置点放粘合剂，然后 将光敏芯片 2、放大电路芯片 3放置到相应位置。待粘合剂固化后， 键合金 线 4， 将光敏芯片 2、 放大电路芯片 3和支架 1的相应电极连接起来； 盖上 支架盖板 12， 将支架条置于灌封模条中， 再向模条中注入适量的封装材料 5；封装材料 5完全固化后，脱去模条，冲筋后即形成红外接收器器件成品。

Claims

权利要求
1、 一种红外接收器， 包括支架、 置于支架中的光敏芯片和放大电路； 光敏芯片、 放大电路及支架的相应电极通过导线相互连接， 其特征在于， 支架、光敏芯片、放大电路、 导线外包封有封装材料； 支架由基板和盖板 两部分组成，在基板的一端设置至少三条引脚，盖板扣接装配在基板之上。
2、 根据权利要求 1所述的红外接收器， 其特征在于： 所述盖板与基 板相应的两侧向下折，并与基板折起的两侧面相接触，盖板的前端也向下 折。
3、 根据权利要求 2所述的红外接收器， 其特征在于： 所述支架基板 两侧所折起的宽度相同， 且盖板两侧折下的宽度与其相适应。
4、 根据权利要求 2或 3所述的红外接收器， 其特征在于:. 所述支架 盖板下折部分位于基板相应侧面折起部分的外部，盖板每个折下的侧面上 至少设置有一个突起，基板相应部位设置有一孔与其相适应，突起穿入孔 中实现盖板和基板的连接。
5、 根据权利要求 1所述的红外接收器， 其特征在于： 所述支架盖板 正面还设置有小窗； 小窗形状可设置为十字状、 网格状、 条状、 梳状、 锯 齿状。
6、 根据权利要求 1 所述的红外接收器， 其特征在于： 所述三条引脚 伸出于外围封装材料之外。
7、 根据权利要求 1所述的红外接收器， 其特征在于： 所述导线为金 线。
PCT/CN2005/001886 2004-11-18 2005-11-09 An infrared receiver WO2006053483A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200420095271.1 2004-11-18
CNU2004200952711U CN2745144Y (zh) 2004-11-18 2004-11-18 一种红外接收器

Publications (1)

Publication Number Publication Date
WO2006053483A1 true WO2006053483A1 (en) 2006-05-26

Family

ID=35579921

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2005/001886 WO2006053483A1 (en) 2004-11-18 2005-11-09 An infrared receiver

Country Status (2)

Country Link
CN (1) CN2745144Y (zh)
WO (1) WO2006053483A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185947A (zh) * 2020-10-21 2021-01-05 深圳市锦创宏光电科技有限公司 一种红外接收装置及方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935663B (zh) * 2017-02-24 2018-06-29 江苏欧密格光电科技股份有限公司 一种贴片红外接收头

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159188A (en) * 1990-08-14 1992-10-27 Sony Corporation Optical reception apparatus using prism having caldera-shaped concave portion
JPH05167357A (ja) * 1991-12-12 1993-07-02 Toshiba Corp 光受信器
JPH05289034A (ja) * 1992-04-07 1993-11-05 Hitachi Ltd 光電子送受信装置
CN2345150Y (zh) * 1998-09-14 1999-10-27 上海吸尘器厂 吸尘器红外遥控装置
CN1339766A (zh) * 2000-08-23 2002-03-13 邱亮南 反射式红外线防盗网
CN2610574Y (zh) * 2003-02-08 2004-04-07 杨家象 红外接收器内屏蔽装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159188A (en) * 1990-08-14 1992-10-27 Sony Corporation Optical reception apparatus using prism having caldera-shaped concave portion
JPH05167357A (ja) * 1991-12-12 1993-07-02 Toshiba Corp 光受信器
JPH05289034A (ja) * 1992-04-07 1993-11-05 Hitachi Ltd 光電子送受信装置
CN2345150Y (zh) * 1998-09-14 1999-10-27 上海吸尘器厂 吸尘器红外遥控装置
CN1339766A (zh) * 2000-08-23 2002-03-13 邱亮南 反射式红外线防盗网
CN2610574Y (zh) * 2003-02-08 2004-04-07 杨家象 红外接收器内屏蔽装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185947A (zh) * 2020-10-21 2021-01-05 深圳市锦创宏光电科技有限公司 一种红外接收装置及方法

Also Published As

Publication number Publication date
CN2745144Y (zh) 2005-12-07

Similar Documents

Publication Publication Date Title
JP3063032B2 (ja) ボ―ルグリッドアレイ型半導体パッケ―ジ及びその製造方法
US20070205492A1 (en) MEMS microphone with a stacked PCB package and method of producing the same
US20100090295A1 (en) Folded lead-frame packages for MEMS devices
JP2002076252A (ja) 半導体装置
US8459108B2 (en) Angular rate sensor
EP0977251A4 (en) RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
CN1127202C (zh) 电子器件及其制造方法
CN201403198Y (zh) 一种微机电系统麦克风
US7362038B1 (en) Surface acoustic wave (SAW) device package and method for packaging a SAW device
CN107527928A (zh) 光学组件封装结构
US8345444B2 (en) Structure with electronic component mounted therein and method for manufacturing such structure
WO2006053483A1 (en) An infrared receiver
TWI398198B (zh) 具有接地屏蔽結構之電路板及其製作方法
CN114339560B (zh) 微型麦克风和电子设备
CN112897451B (zh) 传感器封装结构及其制作方法和电子设备
JP2007124500A5 (zh)
JP2007134618A5 (zh)
KR200335187Y1 (ko) 실드케이스를 삭제한 적외선 리모콘 수신모듈
CN204518074U (zh) 一种含有麦克风的产品模组
CN211712620U (zh) 一种mems传感器封装结构
TWI399974B (zh) 攝像模組之組裝方法
JPS61198656A (ja) 半導体装置
CN206209777U (zh) 紧凑型生物识别模组
KR20070067382A (ko) 반도체 패키지용 기판
JPS59193033A (ja) 半導体素子の封止方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05808142

Country of ref document: EP

Kind code of ref document: A1