WO2006025343A1 - 2次元フォトニック結晶及びそれを用いた光デバイス - Google Patents
2次元フォトニック結晶及びそれを用いた光デバイス Download PDFInfo
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- WO2006025343A1 WO2006025343A1 PCT/JP2005/015691 JP2005015691W WO2006025343A1 WO 2006025343 A1 WO2006025343 A1 WO 2006025343A1 JP 2005015691 W JP2005015691 W JP 2005015691W WO 2006025343 A1 WO2006025343 A1 WO 2006025343A1
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- photonic crystal
- refractive index
- dimensional photonic
- main body
- different refractive
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Definitions
- the present invention relates to a two-dimensional photonic crystal used for an optical multiplexer / demultiplexer or the like in the field of wavelength division multiplex communication or the like.
- “light” used in the present application includes electromagnetic waves other than visible light.
- Optical communication is a communication method that will play a central role in future broadband communication.
- higher performance, smaller size, and lower price are required for the optical components used in the system.
- One potential candidate for communication components is optical communication devices that use photonic crystals. Some of these are already in practical use, and photonic crystal fibers for polarization dispersion compensation are in practical use.
- WDM Wavelength Division Multiplexing
- a photonic crystal is obtained by artificially forming a periodic structure in a dielectric.
- This periodic structure is generally formed by periodically arranging regions having different refractive indexes from the dielectric body (different refractive index regions) in the dielectric body. Due to the periodic structure, a band structure related to light energy is formed in the crystal, and an energy region in which light cannot be propagated is formed. Such an energy region is called a “photonic band gap (PBG)”.
- PBG photonic band gap
- the energy region (wavelength band) in which PBG is formed is determined by the refractive index of the dielectric and the period of the periodic structure.
- Patent Document 1 discloses that a waveguide is formed by periodically disposing a different refractive index region in a main body (slab) and providing a defect in a linear shape in the periodic arrangement.
- a two-dimensional photonic crystal in which a point defect is formed adjacent to the waveguide is described.
- This two-dimensional photonic crystal functions as a demultiplexer that extracts light with a wavelength that matches the resonance wavelength of the resonator from various wavelengths propagating in the waveguide, and is introduced into the external force waveguide. It also functions as a multiplexer.
- PBG is formed only for TE polarization, but such a two-dimensional photonic crystal In the waveguide and resonator, there is almost no loss of TE polarization, whereas TM polarization does not form PBG, so it propagates freely in the main body and generates loss.
- a two-dimensional photonic crystal in which PBGs are formed for both TE polarized waves and TM polarized waves, and both PBGs have a common area has been studied.
- this common area is referred to as the “complete photonic band gap (complete PBG)”.
- a complete PBG is formed by periodically arranging triangular (triangular prism-shaped) holes 12 in a triangular lattice shape in a slab-shaped body 11 2 A two-dimensional photonic crystal is described.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2001-272555 ([0023] to [0027], [0032], FIG. 1, FIGS. 5 to 6)
- Non-Patent Document 1 Hitoshi Kitagawa et al., “Complete photo-band gap in two-dimensional photonic crystal slabs”, Proceedings of the 50th Joint Conference on Applied Physics, Japan Society of Applied Physics, March 2003 , P. 1129
- the complete PBG is large, for example, it is easy to match the transmission wavelength band of the waveguide with the resonance wavelength of the resonator under the condition that neither TE polarization nor TM polarization leaks into the main body. For example, the degree of freedom in designing the optical device is increased.
- the degree of freedom in designing the optical device is increased.
- the problem to be solved by the present invention is to provide a two-dimensional photonic crystal having a complete PBG larger than the conventional two-dimensional photonic crystal and an optical device using the two-dimensional photonic crystal. is there.
- a two-dimensional photonic crystal according to the present invention which has been made to solve the above-mentioned problems, is formed by periodically arranging regions of the same shape having a refractive index different from that of a slab-like body.
- the arrangement of the lattice points for arranging the different refractive index regions satisfies a symmetry of 6 mm, and the different refractive index regions satisfy a symmetry of 3 m in cross section by a plane parallel to the main body. It is not uniform in the vertical direction.
- the edge shape of the cross section of the different refractive index region by a plane perpendicular to the main body is convex, concave, U-shaped, or inclined line toward the vertical center line of the different refractive index region, or It can also be a combination force. Further, one or both of the upper surface and the lower surface of the different refractive index region may be closed.
- the cladding member can be made of a material having a lower refractive index than that of the main body material having a higher refractive index than air.
- the main body is made of Si force and the clad member is made of SiO force.
- the different refractive index region is composed of holes.
- An optical waveguide device is formed by linearly providing a defect in a different refractive index region in the two-dimensional photonic crystal of the present invention.
- the optical resonator device is formed by providing the two-dimensional photonic crystal of the present invention with a defect in the different refractive index region in a dot shape.
- An optical multiplexer / demultiplexer includes the two-dimensional photonic crystal according to the present invention, at least one optical waveguide formed by linearly providing a defect in a different refractive index region in the two-dimensional photonic crystal, And at least one optical resonator formed by providing defects in the different refractive index region in the vicinity of the optical waveguide in the form of dots.
- a method for producing a two-dimensional photonic crystal according to the present invention is a method for producing a two-dimensional photonic crystal, in which holes are periodically arranged in a slab-shaped body.
- the main body of the two-dimensional photonic crystal is a force that uses the expressions “upper surface” and “lower surface” of the different refractive index region. This does not limit the orientation of the two-dimensional photonic crystal. It just shows one direction.
- FIG. 1 is a perspective view showing an example of a conventional two-dimensional photonic crystal in which triangular prismatic holes are periodically provided in a slab body.
- FIG. 2 is a view for explaining the shape of a different refractive index region in the present invention.
- FIG. 3 is a diagram showing an example of the shape of a different refractive index region in the present invention.
- FIG. 4 is a perspective view showing a cross section for explaining the shape of a different refractive index region.
- FIG. 5 is a perspective view (a), a plan view (b), and a sectional view (c) showing an embodiment of the two-dimensional photonic crystal of the present invention.
- FIG. 6 is a cross-sectional view showing one embodiment of the method for producing a two-dimensional photonic crystal of the present invention.
- FIG. 7 is a plan view showing another embodiment of the two-dimensional photonic crystal of the present invention.
- FIG. 8 is a diagram showing the calculation result of complete PBG of the two-dimensional photonic crystal of the comparative example.
- FIG. 9 is a view showing the calculation result of complete PBG of the two-dimensional photonic crystal of this example.
- FIG. 10 is a diagram showing a calculation result of complete PBG of the two-dimensional photonic crystal of this example.
- FIG. 11 is a diagram showing a calculation result of complete PBG of the two-dimensional photonic crystal of this example. Explanation of symbols
- the two-dimensional photonic crystal according to the present invention is characterized by the shape of the different refractive index region and the periodic arrangement thereof, but the slab-like body has a region having a different refractive index (different refractive index region).
- the slab-like body has a region having a different refractive index (different refractive index region).
- different refractive index region can be formed by embedding any member having a refractive index different from that of the main body, but can also be formed by providing a hole in the main body. The latter is preferable because it is easier to manufacture and the difference in refractive index from the main body can be made sufficiently large.
- the shape of the different refractive index region will be described.
- the direction parallel to the main body is defined as the plane direction
- the thickness direction of the main body is defined as the vertical direction.
- the planar shape of the different refractive index region is a symmetrical shape having a three-fold rotational symmetry axis and a vertical mirror surface including the rotational axis. This symmetry is expressed as “3m” in the international notation Hellman Morgan notation and as “C3v” in the chain free notation.
- a plane shape having such symmetry is positive.
- the planar shape of the different refractive index region is not uniform in the vertical direction. That is, as shown in FIG. 2, the shape of the cross-section 24 of the different refractive index region 23 cut by the cross-section 22 in the parallel direction of the main body 21 changes when the surface 22 is moved in a direction perpendicular thereto. To do. Examples of the form of the change are shown in Fig. 3 (a) to (: D. Fig. 3 (a) shows the edge of the different refractive index region 23 when cut by a plane 25 (Fig. 4) perpendicular to the main body 21. The shape force of 26 is convex toward the vertical center line 27 of the refractive index region 23.
- (b) is concave
- (c) is U-shaped
- (d) is an inclined line.
- the upper and lower surfaces of the different refractive index region 23 are closed, or only one of the upper or lower surface of the different refractive index region 23 is shown in (£). It may be occluded.
- the periodic arrangement of many different refractive index regions provided in the main body is such that the arrangement of the lattice points at the arrangement position is 6 mm in the Herman Morgan notation (C6 V in the case of the scene fleece notation).
- TE polarization and TM polarization can be obtained.
- a PBG is formed for both.
- the TM-polarized PBG becomes larger than the case where the planar shape is uniform in the vertical direction, thereby overlapping the TE-polarized PBG, Or the overlap becomes large. This makes it possible to obtain a larger complete PBG than before. As a result, the degree of freedom in designing optical devices using two-dimensional photonic crystals is increased.
- the complete PBG is increased. can do. This is because the electromagnetic field distribution in the direction perpendicular to the main body is flattened due to the presence of such clad members above and below the main body, and this is the electromagnetic wave of the dielectric band and the air band, which ultimately causes the PBG. This is because the difference in the entire field distribution can be increased.
- the material of the clad member may have a refractive index larger or smaller than that of the main body, but in many two-dimensional photonic crystals, the main body material usually has a large difference in refractive index from air. Therefore, since a material having a high refractive index is used, it is natural to use a clad member having a refractive index lower than that of the main body.
- Si when Si is used as the material of the main body, it is better to use SiO as the material of the clad member. In this case, the Si layer and the SiO layer were stacked.
- a commercially available SOI (Silicon On Insulator) substrate can be used.
- the two-dimensional photonic crystal of the present invention becomes an optical waveguide device by providing defects in a different refractive index region in a linear shape, and becomes an optical resonator device by providing defects in a dot shape.
- An optical multiplexer / demultiplexer is provided by providing an optical resonator in the vicinity of such an optical waveguide.
- energy levels (defect levels) in which light can exist in the complete PBG are formed only at the positions of the defects arranged in a line or dot. Light with a wavelength (frequency) corresponding to this defect level can exist in the defect, whereas complete PBG exists in the two-dimensional photonic crystal outside the defect. Both TE polarization and TM polarization cannot propagate. This prevents light in the defect from leaking into the two-dimensional photonic crystal outside the defect. Thereby, the loss of light in the optical waveguide or the optical resonator can be suppressed.
- a complete PBG is not formed when the cross-sectional shape of the different refractive index region by a plane parallel to the main body does not satisfy the symmetry of 3 m and is not uniform in the vertical direction.
- a two-dimensional photonic crystal with a cross-sectional shape that does not satisfy the symmetry of 3 m and is uniform in the vertical direction and has a different refractive index region (i) has a large TE-PBG.
- the transmission wavelength band of the GiO optical resonator increases, and the Q value of the GiO optical resonator increases.
- FIG. 5 is a perspective view of the structure of the two-dimensional photonic crystal of the present invention (a), a cross-sectional view when cut parallel to the main body (b), and a cross-sectional view when cut perpendicular to the main body (c) )
- holes 32 are arranged with a period a in a slab-shaped body 31 having Si force.
- the arrangement of the holes 32 is a triangular lattice, and the arrangement of lattice points of the triangular lattice satisfies a symmetry of 6 mm.
- the hole 32 has a shape in which the upper surface and the lower surface thereof are closed (FIG. 5 (c)), it does not appear on the surface of the main body.
- the planar shape of each hole 32 is an equilateral triangle as shown in FIG. 5 (b), and this shape satisfies the symmetry of 3 m.
- an SOI substrate in which a Si thin film 42 as a main body is formed on a substrate 41 made of SiO.
- Use plate 40 (a).
- a resist 43 is applied on the Si thin film 42, and the planar shape of the resist 43 is a regular triangle (this shape is not shown because FIG. 6 is a cross-sectional view perpendicular to the Si thin film 42).
- 44 is formed in a triangular lattice pattern (b).
- the hole 44 can be formed by a method usually used in manufacturing a semiconductor device, such as exposure or electron beam drawing.
- the silicon thin film 42 is positively etched by a method such as dry etching using an etching gas (for example, SF gas).
- an etching gas for example, SF gas
- Drill a prismatic hole 45 (c).
- the holes 45 are stopped in the middle so that the Si thin film 42 remains on the substrate 41 side of the holes 44.
- the resist is removed (d). Separately, the Si thin film 47 is formed on the substrate 46 that also has SiO force.
- the formed product is prepared, and the Si thin film 42 and the Si thin film 47 are stacked (e) and bonded together (£).
- a method of heating to 900 to 1100 ° C. and fusing can be used.
- the Si thin films 42 and 47 are integrated.
- the SiO substrates 41 and 46 are removed (g) by a method such as wet etching using an etching solution (for example, HF aqueous solution).
- a two-dimensional photonic crystal 48 according to the present invention is obtained. As will be described later, when a clad member is provided, it is used as a clad member without removing the SiO substrates 41 and 46.
- Fig. 7 is a cross-sectional view in the parallel direction of the body when the cross-sectional shape in the parallel direction of the holes is a shape other than an equilateral triangle.
- the cross-sectional shape of the holes when cut perpendicular to the body is the same as in Fig. 5 (c).
- three cylindrical holes 54a, 54b, 54c centered on the vertices 53a, 53b, 53c of the equilateral triangle 52 are provided, and these three holes become a body. Acts as a single different refractive index region 55. Also, the different refractive index region consisting of these three holes satisfies the symmetry of 3m.
- Such different refractive index regions 55 are arranged in a triangular lattice shape.
- the arrangement of the lattice points where this different refractive index region 55 is arranged satisfies the symmetry of 6 mm.
- Figure 7 (b) shows that the three cylindrical holes 54a, 54b, 54c in Figure 7 (a) overlap each other, resulting in one hole 56 It has become.
- the holes 56 are arranged in a triangular lattice pattern.
- the holes 56 satisfy the symmetry of 3 m, and the arrangement of the lattice points where the holes 56 are arranged satisfies the symmetry of 6 mm.
- the results of calculating the value of the complete PBG width (hereinafter referred to as the complete PBG value) for some of the two-dimensional photonic crystals of the present embodiment are shown below.
- a three-dimensional time domain difference (Finite Difference Time Domain: FDTD) method was used. This 3D FDTD method is more complicated than the plane wave expansion method used in Non-Patent Document 1 etc., but the resulting value is more accurate.
- the values of PBG related to TM polarization hereinafter referred to as TM-PBG
- PBG related to TE polarization hereinafter referred to as TE-PBG
- complete PBG is an energy region where TM-PBG and TE-PBG overlap.
- the PBG value is expressed as a percentage by dividing the PBG width ⁇ expressed in frequency by the center value ⁇ of the PBG.
- TM-PBG values and complete ⁇ G values were calculated for a conventional two-dimensional photonic crystal (Fig. 8).
- the main body 81 is made of Si (the same applies to Calculation Examples 1 to 3 described later).
- the planar shape of the hole 82 is also composed of three circular forces centered at the three apexes of the 0 equilateral triangle or GO equilateral triangle.
- Filling factor which is the value obtained by dividing the void volume by the volume of the body f was (0.45 for 0 and 0.58 for (ii).
- the body 81 has a clad member in which both the upper surface and the lower surface are in contact with air in (a), and in (b) the upper surface is in air and the lower surface is sufficiently thicker than the body.
- a complete PBG value is obtained for a two-dimensional photonic crystal in which the planar shape of the holes 82 is an equilateral triangle and the upper and lower surfaces of the holes 82 are closed.
- the height is 0.6a, and the height of the cover that closes the upper and lower surfaces of the air holes 82 is the upper and lower surfaces.
- the deviation was 0.1a.
- 9 (a) to 9 (c) the upper surface and the lower surface of the main body 81 correspond to the structures of FIGS. 8 (a) to 8 (c), and also have air or SiO force.
- Clad member 83
- the complete PBG values were (a) 2.1%, (b) 2.6%, and (c) 3.1%, which were found to be larger than in the comparative example of FIG.
- TM-PBG values were (a) 2.1%, (b) 2.6%, and (c) 3.1%.
- TM-PBG does not open in the corresponding comparative example of Fig. 8, whereas TM-PBG opens in this example, so the complete PBG opens only in this calculation example.
- TM-PBG becomes larger than the corresponding comparative example in FIG.
- the complete PBG value was calculated for the 2D photonic crystal with the top and bottom surfaces closed ( Figure 10).
- the hole and cover heights were 0.6a and 0.1a (both top and bottom surfaces), respectively, and in (b), the hole and cover heights were 0.7a and 0.05a, respectively.
- C) consists of SiO above and below (b)
- a clad member 83 is provided.
- the complete PBG values are (a) 2.0%, (b) 3.5%, and (c) 3.2%, which are larger than those in the comparative example. From this, it is clear that when the body thickness is the same (0.8a), the size of the complete PBG changes as the hole height is changed.
- the complete PBG is smaller than TM-PBG. This is completely included in the energy range of TM-PBG force TE-PBG in the case of Calculation Example 1 and Fig. 10 (b), whereas in the case of Figs. 10 (a) and (c), TM -It is because it overlaps with only a part of PBG force TE-PBG.
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US11/661,232 US7711228B2 (en) | 2004-08-30 | 2005-08-30 | Two-dimensional photonic crystal and optical device using the crystal |
EP05781417A EP1791007A1 (en) | 2004-08-30 | 2005-08-30 | Two-dimensional photonic crystal and optical device using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004-249582 | 2004-08-30 | ||
JP2004249582A JP4297358B2 (ja) | 2004-08-30 | 2004-08-30 | 2次元フォトニック結晶及びそれを用いた光デバイス |
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WO2006025343A1 true WO2006025343A1 (ja) | 2006-03-09 |
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PCT/JP2005/015691 WO2006025343A1 (ja) | 2004-08-30 | 2005-08-30 | 2次元フォトニック結晶及びそれを用いた光デバイス |
Country Status (5)
Country | Link |
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US (1) | US7711228B2 (ja) |
EP (1) | EP1791007A1 (ja) |
JP (1) | JP4297358B2 (ja) |
CN (1) | CN101019052A (ja) |
WO (1) | WO2006025343A1 (ja) |
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JP2008053134A (ja) * | 2006-08-28 | 2008-03-06 | Kyoto Univ | 2次元フォトニック結晶熱輻射光源 |
WO2010041701A1 (ja) | 2008-10-09 | 2010-04-15 | 日産化学工業株式会社 | 電荷輸送性ワニス |
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- 2005-08-30 WO PCT/JP2005/015691 patent/WO2006025343A1/ja active Application Filing
- 2005-08-30 EP EP05781417A patent/EP1791007A1/en not_active Withdrawn
- 2005-08-30 CN CNA2005800284727A patent/CN101019052A/zh active Pending
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WO2010041701A1 (ja) | 2008-10-09 | 2010-04-15 | 日産化学工業株式会社 | 電荷輸送性ワニス |
Also Published As
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US20080013902A1 (en) | 2008-01-17 |
EP1791007A1 (en) | 2007-05-30 |
JP4297358B2 (ja) | 2009-07-15 |
JP2006065150A (ja) | 2006-03-09 |
US7711228B2 (en) | 2010-05-04 |
CN101019052A (zh) | 2007-08-15 |
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