WO2006022302A1 - 窒化アルミニウム結晶の製造方法およびそれにより得られた窒化アルミニウム結晶 - Google Patents

窒化アルミニウム結晶の製造方法およびそれにより得られた窒化アルミニウム結晶

Info

Publication number
WO2006022302A1
WO2006022302A1 PCT/JP2005/015366 JP2005015366W WO2006022302A1 WO 2006022302 A1 WO2006022302 A1 WO 2006022302A1 JP 2005015366 W JP2005015366 W JP 2005015366W WO 2006022302 A1 WO2006022302 A1 WO 2006022302A1
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum nitride
nitride crystal
producing
flux containing
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/015366
Other languages
English (en)
French (fr)
Other versions
WO2006022302A3 (ja
WO2006022302A2 (ja
Inventor
Yusuke Mori
Takatomo Sasaki
Fumio Kawamura
Masashi Yoshimura
Minoru Kawahara
Hiroaki Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Technology Licensing Organization Co Ltd
University of Osaka NUC
Original Assignee
Osaka University NUC
Kansai Technology Licensing Organization Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC, Kansai Technology Licensing Organization Co Ltd filed Critical Osaka University NUC
Priority to US11/661,013 priority Critical patent/US20080008642A1/en
Priority to JP2006531953A priority patent/JPWO2006022302A1/ja
Publication of WO2006022302A1 publication Critical patent/WO2006022302A1/ja
Publication of WO2006022302A2 publication Critical patent/WO2006022302A2/ja
Publication of WO2006022302A3 publication Critical patent/WO2006022302A3/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Abstract

　穏やかな圧力および温度条件で、窒化アルミニウム結晶が製造可能な製造方法を提供する。 　窒化アルミニウム結晶の製造方法において、窒素含有ガスの存在下、下記（Ａ）成分および下記（Ｂ）成分を含むフラックス中又は下記（Ｂ）成分を含むフラックス中において、アルミニウムと前記窒素とを反応させることにより、窒化アルミニウム結晶を生成し成長させる。 （Ａ）　アルカリ金属およびアルカリ土類金属の少なくとも一方の元素 （Ｂ）　スズ（Ｓｎ）、ガリウム（Ｇａ）、インジウム（Ｉｎ）、ビスマス（Ｂｉ）および水銀（Ｈｇ）からなる群から選択される少なくとも一つの元素                                                                                 
PCT/JP2005/015366 2004-08-24 2005-08-24 窒化アルミニウム結晶の製造方法およびそれにより得られた窒化アルミニウム結晶 Ceased WO2006022302A2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/661,013 US20080008642A1 (en) 2004-08-24 2005-08-24 Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby
JP2006531953A JPWO2006022302A1 (ja) 2004-08-24 2005-08-24 窒化アルミニウム結晶の製造方法およびそれにより得られた窒化アルミニウム結晶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004243764 2004-08-24
JP2004-243764 2004-08-24

Publications (3)

Publication Number Publication Date
WO2006022302A1 true WO2006022302A1 (ja) 2006-03-02
WO2006022302A2 WO2006022302A2 (ja) 2006-03-02
WO2006022302A3 WO2006022302A3 (ja) 2006-04-20

Family

ID=35967930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/015366 Ceased WO2006022302A2 (ja) 2004-08-24 2005-08-24 窒化アルミニウム結晶の製造方法およびそれにより得られた窒化アルミニウム結晶

Country Status (3)

Country Link
US (1) US20080008642A1 (ja)
JP (1) JPWO2006022302A1 (ja)
WO (1) WO2006022302A2 (ja)

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JP2008115068A (ja) * 2006-06-30 2008-05-22 Tama Tlo Kk 窒化アルミニウム含有物の製造方法
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JP5224713B2 (ja) * 2007-04-19 2013-07-03 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
JP2009114035A (ja) * 2007-11-08 2009-05-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体製造装置および製造方法
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US9343665B2 (en) * 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
TW201011814A (en) * 2008-09-08 2010-03-16 Kinik Co Method for growing epitaxy
JP5342353B2 (ja) * 2009-07-15 2013-11-13 タマティーエルオー株式会社 窒化アルミニウム含有物の製造方法
KR101317735B1 (ko) * 2009-09-07 2013-10-15 도꾸리쯔교세이호징 리가가쿠 겐큐소 질화물 반도체 다층 구조체 및 그 제조 방법과, 질화물 반도체 발광 소자
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JP5491300B2 (ja) * 2010-07-02 2014-05-14 独立行政法人科学技術振興機構 窒化アルミニウム製造方法
JP5656697B2 (ja) * 2010-07-14 2015-01-21 住友金属鉱山株式会社 窒化アルミニウム結晶の製造方法
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JP2015034104A (ja) * 2013-08-08 2015-02-19 株式会社リコー １３族窒化物結晶の製造装置及び製造方法
US20170183553A1 (en) * 2014-05-30 2017-06-29 National University Corporation Nagoya University Aln crystal preparation method, aln crystals, and organic compound including aln crystals
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JP2005187317A (ja) * 2003-12-03 2005-07-14 Ngk Insulators Ltd 単結晶の製造方法、単結晶および複合体

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