WO2006022036A1 - Dispositif semi-conducteur, dispositif de visualisation, et procédé de fabrication du dispositif - Google Patents

Dispositif semi-conducteur, dispositif de visualisation, et procédé de fabrication du dispositif Download PDF

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Publication number
WO2006022036A1
WO2006022036A1 PCT/JP2004/013773 JP2004013773W WO2006022036A1 WO 2006022036 A1 WO2006022036 A1 WO 2006022036A1 JP 2004013773 W JP2004013773 W JP 2004013773W WO 2006022036 A1 WO2006022036 A1 WO 2006022036A1
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WIPO (PCT)
Prior art keywords
fiber
display device
substrate
light emitting
film
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PCT/JP2004/013773
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English (en)
Japanese (ja)
Inventor
Tsuneo Suzuki
Takeshi Hirayama
Hisashi Koaizawa
Kiyoshi Yase
Kenkichi Suzuki
Michio Kondo
Original Assignee
The Furukawa Electric Co., Ltd.
National Institute Of Advanced Industrial Scienceand Technology
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Application filed by The Furukawa Electric Co., Ltd., National Institute Of Advanced Industrial Scienceand Technology filed Critical The Furukawa Electric Co., Ltd.
Priority to JP2006531230A priority Critical patent/JP4953365B2/ja
Publication of WO2006022036A1 publication Critical patent/WO2006022036A1/fr
Priority to US11/377,581 priority patent/US20060257074A1/en
Priority to US12/696,670 priority patent/US8029327B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/182—OLED comprising a fiber structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a semiconductor device, a display device, and a device manufacturing method, and more particularly, to a semiconductor device that constitutes an organic EL display device and the like, and a method for manufacturing a device such as an organic EL display device.
  • a-Si TFT As a display medium, a-Si TFT (Amorphous-Silicon-TFT) is currently the mainstream as an active matrix. 10 "to 20" diagonal displays are mass-produced for PCs and monitors.
  • LCD Liquid Crystal Display
  • CRT Cathode Ray Tube
  • organic LEDs OLED: Organic Light-Emitting-Diode
  • TFT has recently been rapidly developed and commercialized for low-temperature process polycrystalline Si (low-temperature p-Si). This is because the TFT performance of p-Si is high and peripheral circuits can be built in. Therefore, there is a merit of cost reduction.
  • a-Si TFTs are difficult to drive organic LEDs from the viewpoint of drive current density, and TFTs, including application to LCDs, tend to move to low-temperature p-Si as a whole.
  • the low-temperature p-Si TFT-LCD has excellent TFT performance in principle and can be embedded in peripheral circuits, but there is a big problem in reality.
  • the substrate is glass
  • the process has a low temperature of 500 ° C or less, non-uniformity due to polycrystals, and lithography accuracy of 1 m or more.
  • the peripheral circuit it is necessary to achieve the same performance as Si LSI, but under these restrictions, it is difficult to achieve high image quality and low definition! It is applied to a part of the peripheral circuit of the display. This is the situation.
  • the display medium is an organic LED, that is, TFT-OLED (TFT-Organic Liquid-Emitting Diode)
  • TFT-OLED TFT-Organic Liquid-Emitting Diode
  • the pixel drive circuit is composed of several transistor modules that are not composed of a single transistor, like an LCD, for current drive.
  • p-Si TFTs must be used for large, high-definition displays.
  • the substrate is made of glass, which has a fundamental problem with the TFT itself as described above, and, like the a-SKTFT-LCD manufacturing technology, a large glass substrate is used for cost reduction. It must be used.
  • the organic LED is composed of 5-8 layers of organic thin film.
  • the total film thickness is about 100 to 500 nm, and the thickness of each component film must be formed with an accuracy of about 1 degree.
  • pixels corresponding to three colors must be formed separately over a large area.
  • the current consumption was 1 A / cm 2 when driven by voltage.
  • the current resistance is 10 ⁇ : L00mA / cm 2 which greatly improves the wiring resistance. Must be reduced by several orders of magnitude compared to LCD wiring. It is clear that these manufacturing problems become more difficult to resolve as the display becomes larger and more detailed.
  • p-Si TFT-LCDs based on the current a-Si TFT-LCD manufacturing equipment technology.
  • p-Si TFT-LCDs are in a more difficult situation where Si LSI processes must be realized at low temperatures. Cost reduction by built-in circuit is one of the advantages of p-Si TFT-LCD. This is true when high-performance circuits are realized. In practice, the larger the substrate, the more difficult it is to achieve the various requirements for high-performance devices, such as film quality, photolithography accuracy, and Si LSI-like processes. In this respect, p-Si TFT-OLED is exactly the same, and problems such as LED structure and wiring resistance are added as described above.
  • An object of the present invention is to provide a semiconductor device, a display device, and a device manufacturing method using a one-dimensional substrate that solve these various performance and manufacturing problems, and that further achieve low costs. .
  • a first aspect of the present invention is a semiconductor device having a semiconductor layer formed on a surface of a quartz fiber and an active element formed on the semiconductor layer.
  • a second aspect of the present invention is characterized by having a fiber that also becomes a transparent insulating material, an electrode film formed on the fiber, and a light emitting layer formed on the fiber. This is a display device.
  • a third aspect of the present invention includes a first fiber in which an active element is formed, a composite one-dimensional substrate coupled to the first fiber and the first fiber, and a plurality of regions. And a second fiber on which a light emitting layer is formed.
  • a fiber having a semiconductor layer or an insulating layer formed on a surface thereof and further covered with a protective film is drawn out from a winding jig force, and is pulled out from the winding jig.
  • the protective film is removed, and the portion of the fiber from which the protective film has been removed is cut into a required length to be divided into a plurality of pieces, and the plurality of fibers are attached to a fixed jig at intervals from each other. At least one of an active element and a passive element is formed on the fiber fixed to a fixing jig.
  • the present invention proposes a “one-dimensional substrate” t based on quartz fiber or the like with respect to a conventional two-dimensional substrate, and proposes the above-described display device. It is to solve these problems.
  • the one-dimensional substrate of the present invention corresponding to a conventional SOI (Silicon On Insulator) substrate is a silicon single crystal or polycrystalline thin film formed on a quartz fiber, and is hereinafter referred to as an SOI fiber.
  • This one-dimensional substrate manufacturing method is a high-temperature manufacturing technology for forming a silicon thin film crystal simultaneously with quartz fiber drawing. Further, a high-quality gate oxide film is obtained by thermally oxidizing the resulting silicon film. Can also be produced. This is hereinafter referred to as an oxide-coated SOI fiber. If these are used, the base material is quartz, so that the same process and process flow as the two-dimensional SOI substrate can be used in place of the low-temperature process of the glass substrate, and various high-performance semiconductor elements can be formed. .
  • ITO fiber corresponds to the two-dimensional ITO (Indium Tin Oxide) glass substrate used in organic LEDs! This also forms a capsule simultaneously with the drawing of the quartz fiber.
  • plastic fibers can be used because the film can be formed at a lower temperature than silicon thin film formation.
  • a so-called bottom emission type organic LED is formed with a process flow similar to that of two-dimensional. In this case, the three RGB colors are formed on separate fibers.
  • an active matrix TFT-OLED starting from an SOI fiber, a pixel driving circuit that also has MOS transistor element strength is formed.
  • the organic LED may be formed on the same fiber, or the organic LED may be formed on another fiber to combine both. Regardless of whether they are single or composite, pixels corresponding to the number of rows corresponding to the pixel pitch in the vertical direction of the screen are regularly arranged on one fiber to constitute one column of the display surface.
  • single fiber In this case, the OLED method is limited to the front emission. In the case of a compound compound, both the bottom and front methods can be used. Furthermore, in the case of a composite, it is advantageous that different technologies such as TFT and OLED can be independently developed and improved.
  • the “substrate” is a fiber and has a special shape. Conventional SOI process and organic LED process are applied as they are. However, in order to actually make this, two factors must be considered.
  • the first factor is the shape of the fiber.
  • a normal circular or elliptical cross section is advantageous for producing a light emitter such as an OLED.
  • a square shape is advantageous for SOI. In this way, the shape must be selected depending on the application.
  • the second factor is a fiber-specific manufacturing method, and two methods are conceivable.
  • a fiber having a required length is wound around a winding jig, and the fiber coming out of the fiber passes through a device corresponding to the process and is wound around another winding jig.
  • a basic production line configuration is possible.
  • Equipment installed between two winding jigs that is, the number of processes, the length of the equipment for one fiber, the number in parallel, whether it is intermittent or constant speed, etc.
  • the essential issue is throughput, and basically it is to run a single fiber at as high a speed as possible. This is because the conventional flat substrate has a force that allows the process to proceed over a large area, and in the case of quartz fiber, it basically proceeds in units of one pixel.
  • the process time per pixel becomes very short.
  • a 6-digit high-speed process is required.
  • the constant velocity is a device required to synchronize when a pattern is formed on a traveling substrate as in the exposure process, or to maintain uniformity in film formation and etching. It is a characteristic.
  • the manufacturing equipment is also “one-dimensional” so that it becomes very small, and it is thought that high-speed processing can be realized by changing to the gas phase process force liquid phase which is the base of the conventional flat substrate.
  • the one-dimensional substrate is cut into an appropriate length, and these are arranged and fixed on the surface of a cylinder or a polygonal column, and the force is used as a substrate, or a so-called interdigital shape.
  • This is a method of displacement, which is used as a roller method.
  • the former has a structure in which a flat substrate is rolled into a cylindrical shape, and the manufacturing apparatus is greatly reduced compared to a flat substrate.
  • the process area can be made into a linear shape corresponding to the fiber, and the process rate can be significantly increased at the same time as downsizing of the apparatus by the concentrated system of exposure, vapor deposition source, ion source, plasma source and the like.
  • FIGS. L (a), (b), and (c) are diagrams showing the concept of a one-dimensional substrate.
  • Fig. 1 (a) shows an SOI substrate with a Si thin film crystal formed on a quartz fiber with a square cross section (the corners are actually round) as a specific example
  • Fig. 1 (b) shows a specific example.
  • An ITO substrate with an ITO film formed on a quartz fiber with a circular cross section is shown
  • Fig. 1 (c) shows a structure in which a thermal oxide film is formed on S pus in Fig. 1 (a).
  • FIGS. 2 (a) and 2 (b) are diagrams showing a concept of a display device constituted by a one-dimensional substrate.
  • Fig. 2 (a) is a bird's-eye view of a form in which a square fiber in which pixel drive circuits and wiring are stacked and an OLED is formed and a round fiber is combined. A gate line is connected to the lower surface of the square fiber.
  • FIG. 2B shows the connection between the display surface and the external drive circuit.
  • FIGS. 3 (a), 3 (b), and 3 (c) are diagrams showing a pixel drive circuit and wiring arrangement on a square fiber.
  • Fig. 3 (a) is a diagram of the pixel drive circuit, OLED fiber connection pad, signal line, and current supply line from one side. The wiring is continuous on the fiber axis, and the pixel drive circuit and OLED fiber are connected. The same pattern is repeated at the pixel pitch on the connection pad to the bar.
  • Fig. 3 (b) is a cross-sectional view of a square fiber. The signal line and current supply line run on two sides orthogonal to the first side.
  • Fig. 3 (c) shows the signal line at the terminal and the terminal of the current supply line on the same side as Fig. 3 (a).
  • FIGS. 4 (a) and 4 (b) are diagrams showing the structure of a round OLED fiber.
  • Fig. 4 (a) is a cross-sectional view of the bottom emission type. The OLED is formed in the third and fourth quadrants, and light is emitted from the first and second quadrants.
  • Fig. 4 (b) is a plan view of the pad direction.
  • FIGS. 5 (a) and 5 (b) are diagrams showing the structure of a round front emission type OLED fiber.
  • Fig. 5 (a) is a cross-sectional view. OLEDs are formed in the first and second quadrants, and light is emitted from these forces.
  • FIG. 5 (b) is a plan view.
  • FIG. 6 is a pixel drive circuit diagram.
  • FIG. 7 is a view of a laminate structure of a display device constituted by a composite one-dimensional substrate, as viewed from a cross section perpendicular to the composite fiber.
  • FIG. 8 is a view of a laminate structure of a display device constituted by a composite one-dimensional substrate as seen from a cross section parallel to the composite fiber, and particularly shows a structure near a terminal.
  • FIGS. 9 (a) and 9 (b) are diagrams showing a TFT process flow that also starts the SOI substrate with an oxide film.
  • FIGS. 10 (a) and 10 (b) are diagrams showing a process flow of a bottom emission type OLED using an ITO substrate.
  • FIGS. L l (a) and l (b) are diagrams showing a process flow of a front emission type OLED starting from a fino with a metal film.
  • FIG. 12 is a diagram showing a manufacturing process of a one-dimensional substrate and a display device using the same.
  • FIG. 13 is a view showing the concept of an apparatus for producing a one-dimensional substrate such as an SOI fiber or an ITO fiber.
  • FIG. 14 is a diagram showing a concept of an apparatus for segmenting a one-dimensional substrate and arranging it on a substrate jig surface in order to use it as a process substrate.
  • FIGS. 15 (a), (b), and (c) are diagrams showing three types of configuration examples in which a segmented fiber is a “process substrate”.
  • the “substrate jig” is cylindrical or columnar, and the fibers are arranged and fixed on this surface.
  • Fig. 15 (b) shows the substrate jig with the middle part of the S-ring-shaped fixed part, and Fig. 15 (c) shows the process in which both ends of each fiber have a micro-clamp head and are connected to form an interdigital shape. The substrate is shown.
  • FIGS. 16 (a), 16 (b), and 16 (c) are diagrams showing the principle of an apparatus for film formation, dry etching, impurity doping, etc. on a cylindrical substrate.
  • Fig. 16 (a) shows a type using a focused beam or concentrated plasma state such as ion cluster beam, metal spray, atmospheric pressure plasma, etc.
  • Fig. 16 (b) G), (b) and (ii) are cylindrical CVD devices. Two forms are shown.
  • FIGS. 16 ( C ) G) and (c) (ii) show the sputtering system corresponding to FIGS. 16 (b) G) and (b) (ii).
  • FIG. 17 is a view showing the principle of an apparatus for applying a resist, an organic film or the like.
  • FIG. 18 shows the principle of a high-precision exposure machine.
  • FIG. 19 is a diagram showing the principle of the illumination optical system.
  • FIG. 20 is a diagram showing the principle of an optical system for 1: 1 proximity exposure.
  • FIGS. 21 (a), (b), and (c) are diagrams showing the principle of a wet process system such as development, peeling, wet etching, and cleaning.
  • Fig. 21 (a) shows a horizontal wet tank
  • Fig. 21 (b) shows a vertical wet tank
  • Fig. 21 (c) shows a wet method applicable to a tin substrate.
  • FIGS. 22 (a) and 22 (b) are diagrams illustrating the principle of assembling a composite fiber of TFT and OLED.
  • Fig. 22 (a) shows a method of depositing bumps on a cylindrical substrate
  • Fig. 22 (b) shows a method of connecting OLED fibers to TFT fibers.
  • FIGS. 23 (a) and 23 (b) are diagrams showing a method of arranging a composite fiber to display a display panel.
  • Figure 23 (a) shows a frame for alignment.
  • Figure 23 (b) shows the positional relationship between the frame and the fiber.
  • FIGS. 24 (a) and 24 (b) are diagrams showing a method of attaching a gate line to an array of composite fibers.
  • FIG. 24 (a) shows a frame for gate line arrangement.
  • Figure 24 (b) shows the positional relationship between the frame and the gate line.
  • FIG. 25 is a diagram showing the principle of a microwelder.
  • FIGS. 26 (a) and 26 (b) are diagrams showing a method of attaching two common wires to an array of composite fibers.
  • Figure 26 (a) shows a frame for common line arrangement.
  • Figure 26 (b) shows the positional relationship between the frame and the common line.
  • 10 Square cross-section silica fiber, 10 ': Round cross-section silica fiber, 11: Si thin film crystal, 11': ITO, 12: Thermal oxide film, 20: TFT fino, 21: OLED fino, 25,25 ': FPC or PCB, 2 6,26 ': External drive circuit, etc.
  • Figures l (a), (b) and c) show a conceptual diagram of a one-dimensional substrate based on quartz fiber.
  • reference numerals 10 and 10 ′ denote quartz fibers, which are produced by the same method as the optical fiber drawing process.
  • Figures l (a) and (b) show examples of circular and square cross-sections, respectively, but they can be oval, rectangular, or tube-shaped depending on the application.
  • the diameter of the fiber or the size of one side shall be 800 m or less where the fiber can be wound.
  • Reference numeral 11 denotes a single crystal or polycrystalline film of Si, which is called an SOI fiber. In this case, the thickness of the Si film is about 100 mm.
  • reference numeral 12 denotes an oxide film such as a thermal oxide film formed on the surface of Si.
  • the one-dimensional substrate in the second category is the one in which transparent electrodes such as ITO, zinc oxide, and oxide tin with a thickness of about 100 ° are formed instead of Si in Figs. L (a) and (b). .
  • transparent electrodes such as ITO, zinc oxide, and oxide tin with a thickness of about 100 ° are formed instead of Si in Figs. L (a) and (b).
  • high temperatures are not required to form the Si film, so that multi-component glass, plastic substrates, and other transparent insulating materials can be used instead of quartz.
  • FIG. 2 (a) shows a TFT with a composite one-dimensional substrate having a rectangular SOI fiber 20 with a pixel drive circuit and wiring and round ITO fibers 21-23 formed with a plurality of organic LEDs.
  • a plurality of ITO fibers 21, 22, and 23 in which RGB (red, green, and blue) pixel rows are formed are arranged in accordance with the pixel pitch, and a gate line 24 is connected orthogonally thereto.
  • the end of each wire is connected to a wiring board (PCB: Printed Circuit Boad) Fixed to 25,25 'and connected to the driver IC chip 26,26' mounted on the board.
  • PCB Printed Circuit Boad
  • a plurality of red pixels are formed in a row in the first ITO fiber 21, and a plurality of green pixels are formed in a row in the second ITO fiber 22.
  • the third ITO fiber 23 has a plurality of red pixels formed in a row.
  • Fig. 3 (a) shows a cross-sectional view of a rectangular SOI fiber in which a pixel drive circuit and wiring are configured
  • Figs. 3 (b) and 3 (c) show its plan views.
  • On one side (A) an organic EL (electroluminescence) pixel drive switch circuit 31 is formed.
  • a connection terminal 32 and a part of the signal line 33 and a part of the current source line 34 are connected to the organic LED in the same plane, and each is connected to the drive switch circuit 31.
  • the signal line 33 and the current source line 34 are applied to a part of the surface (D) passing through the surface (B) and (C) orthogonal to the surface (A) and facing the surface (A), respectively, and the longitudinal direction of the fiber. It extends throughout.
  • Fig. 3 (c) shows the configuration near the fiber terminal on side (D), 35 is a gate line node, and 36 and 37 are signal line and current source line terminal pads.
  • the drive switch circuit 31 is composed of an active element such as a MOS transistor.
  • FIG. 4 (a) A cross-sectional view of the round IT0 fiber is shown in Fig. 4 (a), and a plan view of the round IT0 fiber viewed from the bottom of the figure is shown in Fig. 4 (b).
  • This is a so-called bottom emission type organic LED configuration, in which an organic EL film 42 is stacked on an IT0 film 41 formed on the surface of a quartz or plastic fiber 40, and a cathode separated for each pixel.
  • a metal film 43 is formed.
  • the organic LED is formed so that it falls within the third and fourth quadrants (lower half of the figure) in Fig. 4 (a), and light is emitted from the first and second quadrants (upper half of the figure).
  • a pad 46 that penetrates the protective film 44 and is connected to the SOI fiber is formed for each pixel.
  • the metal electrode 45 is formed in the OLED in the longitudinal direction of the fiber and the part that does not interfere with the exit surface, so that it can be used for large screens.
  • FIGS. 5 (a) and 5 (b) there is a so-called front emission type organic LED method, and its cross section and plan view are shown in FIGS. 5 (a) and 5 (b).
  • a base metal film 51 and a cathode metal film 52 separated for each pixel are formed on the surface of a quartz or plastic fiber 50, and an insulating layer 55 is formed on a portion excluding the light emitting surface.
  • the organic EL layer 53 is formed so as to be within the first and second quadrants of FIG. 5 (a), and an ITO film 54 serving as a full-surface electrode is formed thereon.
  • Underlying metal film 51 Extends to the third and fourth quadrants, and pads 58 are formed for each pixel through the insulating layer 55 and the protective film 57 and connected to the SOI fibre.
  • the ITO reinforcing electrode 56 is formed in a region excluding the pad 58 and the light emitting surface.
  • organic EL laminated structure a 2-6 layer structure is used.
  • the composition and materials of each color are as follows.
  • FIG. 6 shows an example of an equivalent circuit of a fiber TFT-OLED.
  • reference numeral 60 is a pixel driving circuit corresponding to 31 in FIG. 3
  • 61 is an ITO electrode of an organic LED
  • 62 force organic EL layer
  • 63 is a cathode electrode
  • 64 is a common line including ITO and a reinforcing electrode
  • 65 is Bump that joins SOI fiber.
  • 61—65 corresponds to OLED fiber.
  • 66 is a signal line
  • 67 is a current source line
  • 60, 66, and 67 correspond to SOI fibers.
  • 68 is an external gate line.
  • FIG. 7 is a cross-sectional view perpendicular to the fiber in the fiber TFT-OLED structure.
  • Each of the composite lines of the SOI fiber 70 and the OLED fiber 71 corresponds to an RGB pixel column in the vertical direction of the display, that is, in the column direction.
  • the gate line 72 is connected to each pixel.
  • the external common line 73 may be one or two at the edge of the screen. This is also the force of attaching a metal reinforcing electrode to the ITO common electrode.
  • a fiber network composed of 70-73 is laminated with a black insulating resin 74 on the lower part of the light emitting part of the OLED fiber and a transparent resin 75 on the upper part. Furthermore, for protection of organic EL, it is against moisture, oxygen, etc.
  • Overlay Nolla film 76, 76 ' for protection of organic EL, it is against moisture, oxygen, etc.
  • FIG. 8 is a cross-sectional view in the direction parallel to the fiber in the fiber TFT-OLED structure, and particularly shows the configuration near the terminal portion.
  • a gate line 82 is connected to each pixel orthogonal to a composite TFT-OLED fiber consisting of SOI fine 80 and OLED fiber 81.
  • the common lines 83 and 83 'that connect the common electrodes of the OLEDs need only be at the screen edges.
  • the signal line and current supply line on each fiber are connected to an external circuit.
  • FPC87 and PCB88 for TAB or relay with driver IC are connected.
  • a one-dimensional substrate composed of LED pixels is coupled to each other at each corresponding pixel to form a composite one-dimensional substrate.
  • This composite one-dimensional substrate constitutes one row of the display surface.
  • one end force on the fiber is injected into the linear conductor signal line 33 running in the longitudinal direction of the fiber and the organic LEDs 42 and 53 constituting each pixel in order to introduce an external force image signal to each pixel.
  • a linear conductor current supply source 34 for supplying a current to be generated is formed in the same SOI fiber 20.
  • the number of these composite fibers 20-23 required for the number of columns on the display screen is regularly arranged in correspondence with the pixel pitch in the horizontal direction of the screen, and signals such as pixel display timing are orthogonal to these.
  • a gate line 24 of a linear conductor introduced into the pixel drive circuit 31 is connected to the SOI fiber 20.
  • a common electrode line 61 that connects the transparent electrodes 41 and 54 that are the light emission and emission surfaces of the ITO fibers 21 to 23 including the organic LEDs 42 and 53 is connected.
  • External drive circuits 26 and 26 'for applying a signal or a control signal for driving a pixel to the ends of the signal line 33 and gate line 24 on the fiber 20 are common to each current supply source 34.
  • the same potential source is connected to each common electrode line 61.
  • the entire mesh thus configured is attached to the light emitting side with a rigid or flexible transparent organic resin or the like on the opposite side, and the black organic resin or the like is attached to the opposite side to protect the above mesh screen.
  • a flat-panel TFT-organic LED light-emitting display with a thickness of 3 mm or less is constructed. In place of SOI fiber 20, use an SOI fiber with an oxide film.
  • FIGS. 9 (a) and 9 (b) are diagrams showing an example of a TFT process when an SOI fiber with an oxide film is used.
  • step (1-3) of FIGS. 9A and 9B an island of the silicon film 90 including the oxide film 91 is formed.
  • the circuit area is 28x2 4 ⁇ m. Even if various other circuit methods are used, an area of 50 ⁇ mD is sufficient.
  • the side surface of the silicon film 90 is plasma oxidized, thermal oxidized, oxide film formed, etc.
  • the gate electrode 93 is formed on the oxide film by covering with an oxide film.
  • metal tongue tungsten, tungsten silicide or the like was used as the gate electrode 93.
  • the source and drain regions 941 and 942 in the n-channel TFT have LDD (Lightly Doped Drain) width of about 1 ⁇ m. )
  • a structure having region 95 is formed. Impurities are introduced at a low concentration first.
  • the resist film thickness applied to the edge of the gate electrode 93 was adjusted to 1 ⁇ m, and high concentration implantation was performed.
  • an oxide film window is opened in an area corresponding to the source and drain regions, and low concentration ion implantation is first performed by plasma doping.
  • a high concentration of ions was introduced by plasma doping while adjusting the resist film thickness to 1 ⁇ m.
  • the first interlayer insulating film 96 is formed. Films were formed and through holes 961, 962,963 were opened to form wirings 971, 972, and 973 for the source, gate, and drain, respectively. At this time, Ti was used as the barrier metal and A1 was used as the wiring metal. At this stage, a part of the wiring for connecting each element in the pixel driving circuit and a part of the wiring for the signal line and the current supply line are formed.
  • a second interlayer insulating film 98 is formed, and the pixel driving circuit and gate pad are formed. Some connections to the circuit and no wiring 991 993 made.
  • deposit A1 for wiring on the side of the fiber complete the connection between the wiring pattern and the circuit, and then form a second interlayer insulating film on the side again to form A1 and form a pattern. To complete the connection to the gate pad.
  • FIGS. 10 (a) and 10 (b) Process diagrams (cross-sectional views) of one OLED fiber are shown in Figs. 10 (a) and 10 (b).
  • the method is bottom emission.
  • the starting one-dimensional substrate is a so-called ITO fiber on which an ITO film 101 is formed in advance.
  • A1 reinforcement wire 102 was formed on this by mask film formation or registry shift-off.
  • the first and second quadrants when the cross-section of the figure is represented by the XY coordinates are the EL light emission surfaces.
  • steps (2-4) of Figs. 10 (a) and 10 (b) the EL layer 103 Are formed in the third and fourth quadrants. Then, as shown in step (5) of FIGS.
  • the cathode metal electrode 104 on the EL layer 103 is separated for each pixel and is formed by mask deposition. Further, as shown in steps (6-9) of FIGS. 10 (a) and 10 (b), a transparent photosensitive resin 105 is applied to all of them, and exposed and cured except for through-holes to the cathode. The unexposed part becomes a through hole by development, and is filled with low melting point solder, conductive adhesive, etc. 106 by means such as ink jet, dispenser, etc., and used as a connection pad with SOI fiber.
  • FIGS. Ll (a) and (b) are process diagrams of a front emission type OLED fiber.
  • Fig.ll (a), (b) As shown in steps (16) and (7-8), the pattern 111 is formed by using the metal film on the one-dimensional substrate metal film fiber 110 as the connection terminal to the base electrode and the SOI substrate in pixel units, and then An insulating film 113 is formed on a semicircular portion opposite to the light emitting portion including the terminal portion. A through hole for the base metal terminal is formed at the same time as the patterning of the insulating film. Next, the metal ITO reinforcing electrode 112 is formed on the insulating film so as not to overlap the terminal portion.
  • a part of the metal film has a connection terminal with the base terminal electrode on the insulating film 113 through the through hole.
  • steps (19), (20-23), and (25) of Fig. Ll (a) and (b) the cathode electrode 114 and the organic EL layer 115 are not affected by the lower half circle. Is mask-deposited to make contact with the reinforcing electrode to form the OLED part. These are all covered with a photosensitive transparent resin 117 as shown in step (26) of Fig. 1 l (a) and (b), photocured with the exception of the connecting terminals, and the terminals are developed through holes.
  • the connection bumps to the SOI substrate are formed by means such as ink jet or dispenser.
  • the entire manufacturing process is roughly divided into four, and the flow chart of the major division process is shown in Fig. 12.
  • the fiber 1D substrate manufacturing process corresponds to the process of making a wafer or SOI substrate with the current 2D technology, so it may be considered independent of the display manufacturing process.
  • these one-dimensional substrates are cut to fit the display size, arranged and fixed on the cylinder, polygonal column surface, or cylinder inner surface, and these are redesigned as “substrates” in the TFT and OLED manufacturing process. It is a process.
  • the manufacturing process of TFT and OLED is the same as that of 2D substrate as described above.
  • the last is the process of assembling the finished fiber into a product.
  • an HD-TV with an aspect ratio of 16: 9 and a diagonal of 50 "and 15" is used as a display.
  • SXGA is taken up as a specific target.
  • the definition of the former is 1080 X 19 20 (screen size ⁇ or 1106 X 622 mm), pixel size 0.75 to 0.576 ⁇ 0.576 mm, and the pitch of each RGB color is 0.192 mm in full spec.
  • the system used was a composite type, with 125 apertures for TFT and 125 ⁇ quartz fiber for OLED.
  • the resolution is 1024 x 1280 (screen size ⁇ or 228.6 x 304.8 mm), pixel size ⁇ or 0.223 x 0.223 mm, RGB pitch H was 0.08 mm, and 70 and 70 ⁇ fibers were used.
  • the length of fiber per color of HD-TV is about 1200m. Since the throughput time of the current large 2D substrate is 60 seconds, the traveling speed of fiber 1D substrate production is about 20m / s, which is the same throughput.
  • Fig. 13 shows the manufacturing principle of one-dimensional substrates such as SOI and ITO using quartz fiber.
  • 131 is a normal silica fiber drawing stage, in which a silica fiber of a given diameter is formed, and then in stage 132, the Si film is formed in a high-temperature atmosphere by CVD, spraying, melt coating-cooling, etc. In this way, a Si crystal was formed, and when winding the fiber, a resist was applied as a protective film at 133 and 134 and wound by a roll 135.
  • the stage 132 is an apparatus suitable for these, and the substrate is formed by the same process.
  • FIG. 14 shows a principle diagram of the segment arraying process.
  • a fiber 142 with a resist protective film is rolled out from a roll 14 1 wound with a one-dimensional substrate, and the resist is peeled off and cleaned in the middle 143 to form a “process substrate”.
  • a segmented fiber is fixed to the surface by a cutting / arranging device 144.
  • Figures 15 (a), 15 (b), and 15 (c) show conceptual diagrams of “process substrates” formed by segment arraying.
  • Reference numeral 151 shown in FIG. 15 (a) is a segmented fiber
  • 152 is a fixing jig that uses these fibers as a “process substrate”.
  • the basic structure is a cylinder, cylinder, or polygonal column with a rotation axis. Fiber positioning grooves are formed on the surface along the axial direction. Although not shown in the figure, the fiber on the fixture is fixed at both ends.
  • two rings 153 and 153 'shown in Fig. 15 (b) are connected by a column 154, and in this case also, a fiber positioning groove is formed on the ring surface. It has a configuration that maintains the linearity of the fiber by fixing and tension at both ends.
  • the jig is 76.4 ⁇ in diameter for 50 ”HD-TV, 622 mm in effective length, and 28.5 ⁇ and 229 mm in the case of 15” SVGA. Therefore, compared to a flat substrate, the “footprint” is 1/14 for HD-TV and 1/10 for a 15 ”display.
  • both ends of the fiber 151 are connected to a micro clamp 15 as shown in FIG. This is held at 5 and fixed to the chain 156, and this is hereinafter referred to as a “interdigital substrate”.
  • This is a convenient form for processing the roll-to-roll used in organic films.
  • the micro clamp 155 has a structure that can rotate at a constant angle simultaneously with a simple clamp, thereby facilitating the processing of each surface of the fiber. Of course, the micro clamp can be used even on the cylindrical substrate.
  • FIG. 16 (a) shows a type in which a process head 162 that generates a focused beam state or a concentrated plasma state such as an ion cluster beam, metal spray, atmospheric pressure plasma, etc. is installed in a vacuum chamber 160, and is a cylindrical substrate.
  • 161 is a method of performing film formation in a one-dimensional direction in the axial direction.
  • the rotation mechanism 163 performs film formation and processing on the entire surface of the substrate.
  • Fig. 16 (b) shows two types of cylindrical CVD apparatus.
  • (0 is the case where the cylindrical substrate 161 is inside the outer cylindrical shape 164
  • GO is a method in which the fiber is fixed to the inner wall of the cylindrical substrate 165. Configure the outer wall.
  • Fig. 16 (c) shows a sputtering apparatus system corresponding to Fig. 16 (b).
  • Fig. 16 (c) (0 is an external cylindrical shape 166 forms a vacuum chamber, and the inside is sputtered.
  • One or a plurality of targets 167 are installed, and film formation is performed on the entire surface of the cylindrical substrate 161 by the rotating mechanism 163.
  • Fig. 16 (c) shows that the cylindrical substrate itself is a substrate holder, and in some cases a vacuum.
  • Sputter target 168 is installed on the central axis in the system that doubles as the outer wall of the room!
  • Dry etching and equipment are essentially the same processes and equipment principles as plasma CVD (P-CVD) and sputtering in film formation. That is, the force at which the process head introduces the etching gas with an atmospheric plasma in FIG. 16 (a), the force to change the CVD gas to the etching gas in FIG. 16 (b), or the target in FIG. 16 (c). Force to use only electrode Perform dry etching by either method.
  • the force pattern formation described above regarding various film formation and dry etching methods and apparatus principles applies photolithography similar to a two-dimensional substrate to a cylindrical substrate.
  • Figure 17 shows the concept of the resist coating method.
  • reference numeral 171 denotes a configuration in which a resist agent is poured onto a cylindrical substrate 170 such as a slit locuser, and the cylindrical substrate is rotated, uniformized and entirely coated by a rotating mechanism 172.
  • a resist agent is poured onto a cylindrical substrate 170 such as a slit locuser, and the cylindrical substrate is rotated, uniformized and entirely coated by a rotating mechanism 172.
  • the entire cylindrical substrate is dipped in a resist solution and rotated around the central axis to form a uniform resist layer around the entire fiber.
  • the resist-coated cylindrical substrate is pre-beta in a cylindrical baking furnace.
  • FIG. 18 shows a conceptual diagram of a high-precision exposure machine used for the pixel circuit TFT.
  • the exposure machine is a system that exposes a single fiber on a cylindrical or polygonal column substrate 180.
  • Reference numeral 181 in the figure rotates the substrate around the central axis and simultaneously moves it in the axial direction. It is.
  • Reference numeral 182 denotes a 5: 1 reduction projection imaging lens having an exposure area of 5 mm, and a plurality of them are connected.
  • the alignment is controlled by the servo control mechanism 183 that controls each of the X-Y-Z three axes independently.
  • the control data is read at high speed with the optical head for detection 186 in the pre-exposure stage and stored in the calculation system 188 via the line 187, and the control signal is received from the calculation system 188. This is transmitted to line 183 via line 189 and servo control of the lens system is performed.
  • a mechanical stylus that senses the side of the fiber may be used instead of the optical head.
  • An excimer laser with a wavelength of 308 nm or 248 nm is used as the light source 185 of this exposure system.
  • the illumination optical system 184 is an ordinary Koehler illumination system, but using a cylindrical lens, etc., the illumination area is 0.2 mm wide and the length corresponds to the length of the concatenation lens system connection, and is at least 250 mm in slit shape. is there.
  • FIG. 19 shows an equivalent optical system of the exposure optical system.
  • the secondary light source 190 is created by the splitting lens 192 from the parallel light 190 of the excimer laser processed into an appropriate shape, and the mask 196 is formed with the light uniformly distributed in a given shape together with the secondary light source 193 and the capacitor lens 194. Illuminate.
  • the field lens 195 forms a secondary light source image on the entrance pupil 198 of the imaging lens 197 and forms a mask image on the imaging surface 199.
  • the optical system 190-195 in the figure represents either the X-axis or Y-axis direction of the slit-like illumination, and actually two sets of optical system forces. This is a force that is a common optical system, and the field lens 195 and later are separate optical systems.
  • the above is a pixel switch exposure method that requires high accuracy, but it does not require as high accuracy as a TFT, and in the case of a pattern over a large area, such as wiring in a pixel switch, a pattern in a node / node, and a fiber axis direction, etc.
  • 1: 1 proximity exposure as shown in Fig. 20 was used.
  • a cylindrical lens 202 designed to collect the incident light 204 at the center of the fiber at a sufficient angle to cover the end of the fiber 201 is placed parallel to the fiber, so that the mask pattern 203 is a curved surface of the fiber. Projected along.
  • the cylindrical lens is composed of one or a plurality of lenses, and is configured to correspond to the alignment with the fiber.
  • FIGS. 21 (a), (b), and (c) show the principle diagrams of a wet process system such as development, peeling, wet etching, and cleaning.
  • FIG. 12A shows a method in which the cylindrical substrate 211 is processed in a horizontal wet tank 212, and a plurality of wet processes are performed in the rotation and transfer system 213 in the tank.
  • Figure 21 (b) shows the case where the vertical tank 214 is used.
  • FIG. 21 (c) is a method adapted to the interdigital substrate 215 having the shape shown in FIG. 15 (c), and the wet tank 216 is passed through the roller transport systems 217-1 to 217-3. After washing, dry clean air or nitrogen is sprayed or blown like an air knife.
  • the process head in Fig. 16 (a) is a slit ion gun.
  • the plasma doping method and equipment are essentially the same process and equipment principle as P-CVD and sputtering in film formation. That is, in FIG. 16 (a), the process head introduces the impurity gas by atmospheric pressure plasma.
  • the CVD gas is changed to the impurity gas, or in FIG. 16 (c), only the electrode is used instead of the target.
  • Doping is performed by either method of introducing impurity gas.
  • the impurity activity is the usual thermal annealing method.
  • the hydrogen anneal in the process is performed using a hydrogen furnace as in a normal semiconductor process.
  • the TFT and OLED cylindrical substrates 221 or the interdigital substrate 223 Deposit solder or conductive adhesive used at low temperatures that will not damage the OLED on the pad using means such as inkjet 224.
  • the cylindrical substrate rotates and moves around the shaft 222.
  • the axial movement may be performed by the inkjet head 224.
  • remove one 225 (223) from the cylindrical substrate, etc. and use the jig 227 to hold and crimp both ends of the two fibers with bumps formed in this way. Crimp on fiber 226 after alignment. For fiber processed substrate jigs, the connection of both fibers is tested at this stage.
  • these double-wire fibers 231 are fixed to the fiber fixing frame 232 shown in FIG. 23 (a) in the order of RGB in accordance with the screen pitch.
  • This frame 235 (232) is outside the OLED fiber 233 so as not to interfere with the gate line connection described below, as shown in FIG. 23 (b).
  • a low melting point solder or the like is deposited on the gate pad of the TFT fiber 234 from the direction of the arrow 236 by an ink jet method or the like as described above.
  • a connection test of both fibers may be performed. Further, the unnecessary end portion is cut here.
  • the fiber and the gate line are connected.
  • a frame 241 in which a copper wire for a gate line is stretched according to the pixel pitch has a partially nested structure with the fiber fixing frame 232 shown in FIG. Copper wire is pre-coated with low-temperature solder.
  • the positional relationship between the fibers 242, 243 and the copper wire is as shown in Fig. 24 (b), and is connected to the lower side of the TFT fiber 243 under the OLED fiber 242 by thermocompression bonding or the laser micro welder shown in Fig. 25. .
  • the frame in FIG. 24 is on the XY stage, and the gate line 251 runs perpendicularly (Y) to the paper surface as shown in FIG.
  • the laser welding head emits pulse light in synchronization with the gate pad position.
  • the gate wire 251 is a continuous copper wire, the wire diameter is 100 m ⁇ , and the gap between the copper wires is 476 ⁇ m for 50 ”HD-TV.
  • the optical head part 253 of the microwelder is This is a micro-optics optical system consisting of a trapezoidal prism 254, a mirror 255, and a microlens 256.
  • the pulsed laser beam 257 is divided by a trapezoidal prism and is divided into both copper wires.
  • the bump 258 on the TFT fiber 252 is irradiated from the side.
  • a YAG laser fundamental wave is used as a laser, and this is condensed to 10 ⁇ or less by a lens 256 to melt and weld the bump.
  • the output of the original laser source must be in TEM mode. For this reason, it is usually used as a light guide system.
  • the vertical pixel pitch of the HD-TV we are considering now is 576 ⁇ m, so when using a light source with an oscillation frequency of 20 kHz, the moving speed is about 12 m / s.
  • the travel time for one gate line is approximately 0.1 seconds, so 108 seconds are required for the full screen.
  • each operation such as acceleration, deceleration, and movement of one pixel pitch requires less than 0.1 seconds each, and it takes about 400 seconds, that is, a force that requires about 7 minutes for one head.
  • One display could be completed in less than a minute.
  • the common wire frame 261 as shown in FIG. 26 (a) has a structure in which the two conductors 263 stretched on it are positioned above the OLED fiber 264 as shown in FIG. 26 (b). have .
  • the OLED fiber and the two common wires are pre-deposited with a conductive adhesive that is connected at a low temperature by a method such as ink jet.
  • a lighting inspection is performed using a professional bar, and in particular, the above connection is inspected.
  • the signal driver IC chip and the current source are connected to the end of the TFT fiber.
  • circuit components are attached to a flexible or rigid circuit board having a multilayer wiring force of 0.4 mm thickness, and terminals are formed for each vertical pixel column.
  • the method for connecting these to the fiber is exactly the same as described above.
  • the gate line and the common line are similarly connected to each other by a gate driver IC chip and a flexible or rigid circuit board such as a multilayer wiring card on which common electrodes are mounted arranged on the side perpendicular to the above.
  • the resin containing black paint is poured on the opposite side of the fiber exit surface, and then the transparent resin is poured on the fiber exit surface side.
  • Complete the display panel by shaping it into a flat plate so that is less than lmm.
  • an ultra-thin and large-sized high-definition display of 2 mm or less can be manufactured at low cost. Therefore, various application areas such as full-scale wall-mounted TV, medical use, and electronic paper will be expanded. Furthermore, since it is a completely new production device, it will be possible to speed up technological innovation because it will create a new industry and at the same time it will be small in size and low in manufacturing costs. Although I will not go into the contents here, the ripple effect of these devices and processes other than the display is enormous, and is particularly significant as a pre-stage leading to nanotechnology.
  • a planar substrate made of a silicon wafer or a glass substrate is used as a drive circuit element, and an OLED fiber arrayed with them. It can also be combined as an organic EL display!
  • the silicon wafer process has the advantage that it can be procured very inexpensively because of the large volume of semiconductor devices used.
  • it is very difficult to produce a high-definition display with an element size of 50 ⁇ m or less using a normal two-dimensional substrate. This is because when manufacturing an organic EL element, a metal shadow mask is used, and a different mask is used for each of the red, green, and blue masks.
  • the relative position accuracy between the mask and the substrate may be mask processing accuracy of 3 ⁇ m or less, alignment accuracy of about 5 ⁇ m, and displacement of 1 to 3 m due to deformation due to thermal expansion during the process. Therefore, the total length is about 5 to 10 m, and it is difficult to achieve the above element size below the industrial level.
  • the organic EL film can be arranged and arranged independently for each color by using a reel 'two' reel method.
  • the mask since the mask may be one or several slit-shaped shadow masks, it can be manufactured with an accuracy of 1 or less, and can be easily obtained by fixing the mask and intermittently moving the one-dimensional substrate on the mask. Films can be formed with high accuracy. Of course, if the mask is moved in synchronization with the movement of the one-dimensional substrate, it can be manufactured continuously.
  • an inexpensive and high-definition display can be achieved by combining an OLED fiber array and a TFT circuit board made of a two-dimensional substrate. Ray can be realized.
  • the TFT performance is much better than that of a polycrystalline TFT, so that high-speed response can be improved, complicated functions can be added to the circuit, and color correction can be improved.

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Abstract

Cette invention concerne un dispositif de visualisation capable d’éliminer le besoin de l’attribution de substrats et utilisant un substrat unidimensionnel permettant une réduction du coût supplémentaire, comprenant une première fibre (80) sur la surface de laquelle une couche de silicium ou un film d’oxyde, dans lesquels sont formés des éléments actifs, sont formés, et une seconde fibre (81) liée à la première fibre (80) de façon à former le substrat unidimensionnel composite en association avec la première fibre (80), et possédant des couches électroluminescentes formées dans une pluralité de zones. La première fibre (80) et la seconde fibre (81) sont extraites par des outils de tension et coupées en une pluralité de morceaux aux longueurs requises. La pluralité de premières et secondes fibres (80) et (81) sont disposées sur un outil de fixation parallèlement les unes aux autres et, dans cet état, au moins l’un des éléments actifs et des éléments passifs est formé sur les première et seconde fibres (80) et (81).
PCT/JP2004/013773 2003-09-19 2004-09-21 Dispositif semi-conducteur, dispositif de visualisation, et procédé de fabrication du dispositif WO2006022036A1 (fr)

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US11/377,581 US20060257074A1 (en) 2004-09-21 2006-03-17 Semiconductor device, display device and device fabricating method
US12/696,670 US8029327B2 (en) 2004-09-21 2010-01-29 Semiconductor device and display device using a one-dimensional substrate and device fabricating method thereof

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JP2010015776A (ja) * 2008-07-02 2010-01-21 Furukawa Electric Co Ltd:The ファイバ基板接合素子の製造方法およびファイバ基板接合素子
JP2013089753A (ja) * 2011-10-18 2013-05-13 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタ、薄膜トランジスタアレイ基板、フレキシブル表示素子、フレキシブル表示装置及び薄膜トランジスタアレイ基板の製造方法

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JP2002184580A (ja) * 2000-08-17 2002-06-28 General Electric Co <Ge> Ｏｌｅｄ繊維光源
JP2002258775A (ja) * 2001-03-05 2002-09-11 Matsushita Electric Ind Co Ltd 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置
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JP2010015775A (ja) * 2008-07-02 2010-01-21 Furukawa Electric Co Ltd:The ファイバ基板接合素子の製造方法およびファイバ基板接合素子
JP2010015776A (ja) * 2008-07-02 2010-01-21 Furukawa Electric Co Ltd:The ファイバ基板接合素子の製造方法およびファイバ基板接合素子
JP2013089753A (ja) * 2011-10-18 2013-05-13 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタ、薄膜トランジスタアレイ基板、フレキシブル表示素子、フレキシブル表示装置及び薄膜トランジスタアレイ基板の製造方法

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