WO2006013826A1 - Ｂｉ層状化合物ナノプレート及びその配列体並びにそれらの製造方法とそれを用いた装置 - Google Patents

Ｂｉ層状化合物ナノプレート及びその配列体並びにそれらの製造方法とそれを用いた装置 Download PDF

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Publication number
WO2006013826A1
WO2006013826A1 PCT/JP2005/014047 JP2005014047W WO2006013826A1 WO 2006013826 A1 WO2006013826 A1 WO 2006013826A1 JP 2005014047 W JP2005014047 W JP 2005014047W WO 2006013826 A1 WO2006013826 A1 WO 2006013826A1
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single crystal
crystal substrate
nanoplate
array
substrate
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English (en)
French (fr)
Japanese (ja)
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Hideomi Koinuma
Yuji Matsumoto
Ryota Takahashi
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Japan Science and Technology Agency
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Japan Science and Technology Agency
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/002—Mixed oxides other than spinels, e.g. perovskite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/18—Arsenic, antimony or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/024—Multiple impregnation or coating
    • B01J37/0244—Coatings comprising several layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Definitions

  • Aurivillius Bi-layered compounds among multi-element oxides containing bismuth as a constituent element have attracted attention for their excellent ferroelectric properties.
  • the Aurivil lius Bi layered compound has the chemical composition formula (Bi O) A B O (where A is Sr, Ba, Ca
  • Non-Patent Document 5 Wei F. Yao et al., "Synthesis and photocatalytic property of bismuth titanate Bi4Ti3012" Materials Letters 57 (2003) 1899—1902
  • each nanostructure can be made into a memory cell, and a cell separation process is not required, and a ferroelectric memory can be constructed without sacrificing the degree of integration. .
  • the Bi layered compound nanoplate of the present invention comprises:
  • the Bi-layered composite nanoplate array of the present invention comprises a single crystal substrate and a VO (where X is a composition ratio, l ⁇ x ⁇ 2.5) flux layer disposed on the single crystal substrate.
  • a VO where X is a composition ratio, l ⁇ x ⁇ 2.5
  • Conductive single crystal substrates are SrTiO single crystal substrate, LaAlO single crystal substrate, (LaA).
  • the Bi layered composite nanoplate array manufacturing method of the present invention is a vapor phase growth method in which a VO is formed on a predetermined single crystal substrate at a predetermined substrate temperature in an oxygen atmosphere at a predetermined pressure. (However, l ⁇ x ⁇ 2.5) is deposited, and a predetermined layer is deposited on the flux layer.
  • aAlO) (Sr AlTaO) single crystal substrate Si single crystal substrate, NdGaO single crystal substrate, Y
  • the deposition method of 4 3 12 4 3 1 is KrF excimer pulse laser with VO target and Bi Ti O target.
  • FIG. 7 is a diagram showing the orientation relationship between the Bi Ti O nanoplate of the present invention and a single crystal substrate.
  • FIG. 12 shows a configuration of a ferroelectric memory using the Bi Ti O nanoplate array of the present invention.
  • A is Bi and B is Ti And Bi layered compound consisting of Bi Ti O with m 3
  • these Bi-layered composite nanoplates and Bi-layered composite nanoplate arrays are referred to as Biplate-like composite nanoplate arrays. They are called Ti O nanoplates and Bi Ti O nanoplate arrays. Also, the embodiment
  • FIG. 1 is a schematic diagram of a laser ablation apparatus used in the method of the present invention.
  • the laser ablative device 1 includes a target 3 that has a VO sintering strength, a target 4 that also has a Bi Ti O sintering strength, and a substrate temperature control heater 5 in a vacuum chamber 2 that can be evacuated.
  • a laser light pulse 8 is irradiated onto the target through a window 7 made of a transparent material provided in the vacuum chamber 2.
  • the target 3 and the target 4 are configured to be movable, and a desired target material is ablated by moving the desired target to the irradiation position of the laser light pulse 8 and irradiating the laser light pulse 8.
  • FIG. 2 is a diagram showing a method for producing a BiTi 2 O nanoplate array according to the present invention.
  • the single crystal substrate is preferably an SrTiO single crystal substrate. Also, LaAlO single crystal substrate, (LaAlO) (Sr AlTaO) single crystal substrate, Si single crystal substrate, NdGaO single crystal substrate,
  • a thin film made of Pr, Ir, IrO, RuO, La Sr CoO, LaNiO or SrRuO is used as a conductive thin film that is resistant to acidity even on a substrate on which a conductive thin film is deposited.
  • Bi Ti O nanoplate is a Bi Ti O nanoplate array manufactured as described above.
  • the nanoplate and the nanoplate array were produced.
  • Fig. 4 shows the BiTiO nanoprefabricated film of the present invention fabricated using an Nb-doped SrTiO (001) surface substrate.
  • the entire plate and objects arranged on this substrate are the BiTiO nanoplate array of the present invention. .
  • the layer that appears gray between the Bi Ti O nanoplate and the black part is VO.
  • Figure 5 shows the Bi Ti O nanoplate arrangement of the present invention fabricated using a LaAlO (001) surface substrate.
  • Bi Ti O nanoplate arrays can be produced in the same way as with the substrate.
  • Figure 7 shows the Bi Ti O nanoplate and single crystal substrate obtained from the SEM image shown in Figure 4.
  • a force with a length of about 1 m and a side length in the [001] direction of about 300 nm, or a side length in the [110] and [001] directions is about 1 ⁇ m and [1 10] It can be seen that the length of the side in the direction is about 300 nm.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2005/014047 2004-08-06 2005-08-01 Ｂｉ層状化合物ナノプレート及びその配列体並びにそれらの製造方法とそれを用いた装置 Ceased WO2006013826A1 (ja)

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US11/659,428 US7911927B2 (en) 2004-08-06 2005-08-01 Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them

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JP2004-230529 2004-08-06
JP2004230529A JP4742533B2 (ja) 2004-08-06 2004-08-06 Ｂｉ層状化合物ナノプレート及びその配列体並びにその製造方法とそれを用いた装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100393625C (zh) * 2006-03-06 2008-06-11 湖北大学 一种钕掺杂钛酸铋纳米线阵列铁电存储材料及其合成方法
CN108706632A (zh) * 2018-06-25 2018-10-26 浙江大学 一种钛酸铋纳米片的制备方法
CN110592539A (zh) * 2019-09-17 2019-12-20 常州大学 一种镍酸镧定位替代的钛酸铋合金薄膜及其制备方法
WO2023058703A1 (ja) * 2021-10-08 2023-04-13 国立大学法人東海国立大学機構 高誘電性原子膜

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KR101126086B1 (ko) * 2008-09-22 2012-03-29 한국과학기술원 금속 단결정 나노플레이트 및 그 제조방법
US9627490B1 (en) * 2015-12-18 2017-04-18 Wisconsin Alumni Research Foundation Epitaxial growth of high quality vanadium dioxide films with template engineering
CN106087059A (zh) * 2016-06-30 2016-11-09 武汉工程大学 一种铋层状结构K0.5Bi4.5Ti4O15晶体的制备工艺
US10216013B2 (en) 2017-03-07 2019-02-26 Wisconsin Alumni Research Foundation Vanadium dioxide-based optical and radiofrequency switches
KR102392041B1 (ko) 2017-03-10 2022-04-27 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102363288B1 (ko) 2017-03-10 2022-02-14 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102325821B1 (ko) 2017-03-31 2021-11-11 삼성전자주식회사 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터
US11335781B2 (en) 2017-05-10 2022-05-17 Wisconsin Alumni Research Foundation Vanadium dioxide heterostructures having an isostructural metal-insulator transition
CN109734441A (zh) * 2018-12-17 2019-05-10 中国科学院上海硅酸盐研究所 一种窄禁带铋层状共生结构铁电材料及其制备方法
EP4196623A4 (en) * 2020-08-17 2024-08-14 National University of Singapore HIGHLY ORIENTED SINGLE CRYSTAL LOW DIMENSIONAL NANOSTRUCTURES, FABRICATION METHODS AND DEVICES
CN115354397B (zh) * 2022-07-11 2023-08-25 西北工业大学 一种大面积二维单晶及制备方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100393625C (zh) * 2006-03-06 2008-06-11 湖北大学 一种钕掺杂钛酸铋纳米线阵列铁电存储材料及其合成方法
CN108706632A (zh) * 2018-06-25 2018-10-26 浙江大学 一种钛酸铋纳米片的制备方法
CN108706632B (zh) * 2018-06-25 2020-01-14 浙江大学 一种钛酸铋纳米片的制备方法
CN110592539A (zh) * 2019-09-17 2019-12-20 常州大学 一种镍酸镧定位替代的钛酸铋合金薄膜及其制备方法
WO2023058703A1 (ja) * 2021-10-08 2023-04-13 国立大学法人東海国立大学機構 高誘電性原子膜

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US7911927B2 (en) 2011-03-22
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US20090213636A1 (en) 2009-08-27

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