WO2006012847A1 - Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser - Google Patents

Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser Download PDF

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Publication number
WO2006012847A1
WO2006012847A1 PCT/DE2005/001296 DE2005001296W WO2006012847A1 WO 2006012847 A1 WO2006012847 A1 WO 2006012847A1 DE 2005001296 W DE2005001296 W DE 2005001296W WO 2006012847 A1 WO2006012847 A1 WO 2006012847A1
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Prior art keywords
power semiconductor
semiconductor chip
metal plate
semiconductor device
upper side
Prior art date
Application number
PCT/DE2005/001296
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German (de)
English (en)
Inventor
Khalil Hosseini
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Infineon Technologies Ag
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Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2006012847A1 publication Critical patent/WO2006012847A1/fr

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Abstract

La présente invention concerne un composant à semi-conducteur de puissance vertical (1) comprenant une puce à semi-conducteur (2) qui présente une pluralité de faces de contact (4) d'une électrode de côté supérieur commune (30), réparties sur le côté supérieur (3). Le côté arrière (7) de la puce à semi-conducteur, forme une contre-électrode (29) avec une première borne de connexion extérieure du composant à semi-conducteur de puissance, alors que le côté supérieur (3) de la puce à semi-conducteur (2) présente une plaque métallique (10) en tant qu'électrode de côté supérieur commune (30), ladite plaque métallique étant reliée par liaison de matière aux faces de contact. Le côté supérieur (11) de la plaque métallique est connecté électriquement à une seconde borne de connexion du composant à semi-conducteur de puissance, par des liaisons de métallisation (14).
PCT/DE2005/001296 2004-07-29 2005-07-21 Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser WO2006012847A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004036905.4 2004-07-29
DE102004036905A DE102004036905A1 (de) 2004-07-29 2004-07-29 Vertikales Leistungshalbleiterbauteil mit einem Halbleiterchip und Verfahren zur Herstellung desselben

Publications (1)

Publication Number Publication Date
WO2006012847A1 true WO2006012847A1 (fr) 2006-02-09

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Application Number Title Priority Date Filing Date
PCT/DE2005/001296 WO2006012847A1 (fr) 2004-07-29 2005-07-21 Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser

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Country Link
DE (1) DE102004036905A1 (fr)
WO (1) WO2006012847A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851927B2 (en) 2006-12-19 2010-12-14 Infineon Technologies Ag Semiconductor component comprising a semiconductor chip and semiconductor component carrier with external connection strips
EP2290683A1 (fr) * 2009-08-27 2011-03-02 ABB Research Ltd Interconexion d'un module électronique
US8013441B2 (en) 2005-10-14 2011-09-06 Infineon Technologies Ag Power semiconductor device in lead frame employing connecting element with conductive film
US9318421B2 (en) 2011-10-15 2016-04-19 Danfoss Silicon Power Gmbh Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof
US9786627B2 (en) 2011-10-15 2017-10-10 Danfoss Silicon Power Gmbh Method for creating a connection between metallic moulded bodies and a power semiconductor which is used to bond to thick wires or strips
EP3385983A1 (fr) * 2017-04-04 2018-10-10 Heraeus Deutschland GmbH & Co. KG Système adaptateur destiné à agrandir la zone de contact d'au moins une surface de contact sur au moins un composant électronique et procédé d'agrandissement de zone de contact
US10607962B2 (en) 2015-08-14 2020-03-31 Danfoss Silicon Power Gmbh Method for manufacturing semiconductor chips
WO2020201005A1 (fr) * 2019-04-05 2020-10-08 Danfoss Silicon Power Gmbh Module semi-conducteur et procédé destiné à le fabriquer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005039165B4 (de) 2005-08-17 2010-12-02 Infineon Technologies Ag Draht- und streifengebondetes Halbleiterleistungsbauteil und Verfahren zu dessen Herstellung
DE102006015447B4 (de) * 2006-03-31 2012-08-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit einem Leistungshalbleiterchip und Verfahren zur Herstellung desselben
DE102016106113A1 (de) 2016-04-04 2017-10-05 Infineon Technologies Austria Ag Halbbrückenschaltung und Clip-Draht-Packung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697728A1 (fr) * 1994-08-02 1996-02-21 STMicroelectronics S.r.l. Dispositif à semi-conducteur de puissance en technologie MOS puce et boîtier assemblé
DE19531158A1 (de) * 1995-08-24 1997-02-27 Daimler Benz Ag Verfahren zur Erzeugung einer temperaturstabilen Verbindung
EP0917191A2 (fr) * 1997-11-18 1999-05-19 Matsushita Electric Industrial Co., Ltd Unité de composant électronique, assemblage électronique utilisant l'unité, et procédé de fabrication de l'unité de composant électronique
DE10134943A1 (de) * 2001-07-23 2002-10-17 Infineon Technologies Ag Elektronisches Leistungsbauteil mit einem Halbleiterchip
US20040086739A1 (en) * 2002-06-20 2004-05-06 Yasunori Matsumura Film carrier tape for mounting electronic part

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6332782B1 (en) * 2000-06-19 2001-12-25 International Business Machines Corporation Spatial transformation interposer for electronic packaging
US6713317B2 (en) * 2002-08-12 2004-03-30 Semiconductor Components Industries, L.L.C. Semiconductor device and laminated leadframe package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697728A1 (fr) * 1994-08-02 1996-02-21 STMicroelectronics S.r.l. Dispositif à semi-conducteur de puissance en technologie MOS puce et boîtier assemblé
DE19531158A1 (de) * 1995-08-24 1997-02-27 Daimler Benz Ag Verfahren zur Erzeugung einer temperaturstabilen Verbindung
EP0917191A2 (fr) * 1997-11-18 1999-05-19 Matsushita Electric Industrial Co., Ltd Unité de composant électronique, assemblage électronique utilisant l'unité, et procédé de fabrication de l'unité de composant électronique
DE10134943A1 (de) * 2001-07-23 2002-10-17 Infineon Technologies Ag Elektronisches Leistungsbauteil mit einem Halbleiterchip
US20040086739A1 (en) * 2002-06-20 2004-05-06 Yasunori Matsumura Film carrier tape for mounting electronic part

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8013441B2 (en) 2005-10-14 2011-09-06 Infineon Technologies Ag Power semiconductor device in lead frame employing connecting element with conductive film
US7851927B2 (en) 2006-12-19 2010-12-14 Infineon Technologies Ag Semiconductor component comprising a semiconductor chip and semiconductor component carrier with external connection strips
EP2290683A1 (fr) * 2009-08-27 2011-03-02 ABB Research Ltd Interconexion d'un module électronique
US9318421B2 (en) 2011-10-15 2016-04-19 Danfoss Silicon Power Gmbh Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof
US9786627B2 (en) 2011-10-15 2017-10-10 Danfoss Silicon Power Gmbh Method for creating a connection between metallic moulded bodies and a power semiconductor which is used to bond to thick wires or strips
US10607962B2 (en) 2015-08-14 2020-03-31 Danfoss Silicon Power Gmbh Method for manufacturing semiconductor chips
EP3385983A1 (fr) * 2017-04-04 2018-10-10 Heraeus Deutschland GmbH & Co. KG Système adaptateur destiné à agrandir la zone de contact d'au moins une surface de contact sur au moins un composant électronique et procédé d'agrandissement de zone de contact
WO2018184755A1 (fr) * 2017-04-04 2018-10-11 Heraeus Deutschland GmbH & Co. KG Système adaptateur servant à agrandir une zone de contact d'au moins une surface de contact sur au moins un composant électronique et procédé servant à agrandir une zone de contact
WO2020201005A1 (fr) * 2019-04-05 2020-10-08 Danfoss Silicon Power Gmbh Module semi-conducteur et procédé destiné à le fabriquer

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