WO2005124787A3 - Dispositif electrique et procede de fabrication de ce dispositif - Google Patents

Dispositif electrique et procede de fabrication de ce dispositif Download PDF

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Publication number
WO2005124787A3
WO2005124787A3 PCT/IB2005/051893 IB2005051893W WO2005124787A3 WO 2005124787 A3 WO2005124787 A3 WO 2005124787A3 IB 2005051893 W IB2005051893 W IB 2005051893W WO 2005124787 A3 WO2005124787 A3 WO 2005124787A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrical device
layer
punch
diode
series
Prior art date
Application number
PCT/IB2005/051893
Other languages
English (en)
Other versions
WO2005124787A2 (fr
Inventor
Pierre H Woerlee
Franciscus P Widdershoven
Acht Victor M G Van
Teunis J Ikkink
Nicolaas Lambert
Albert W Marsman
Original Assignee
Koninkl Philips Electronics Nv
Pierre H Woerlee
Franciscus P Widdershoven
Acht Victor M G Van
Teunis J Ikkink
Nicolaas Lambert
Albert W Marsman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Pierre H Woerlee, Franciscus P Widdershoven, Acht Victor M G Van, Teunis J Ikkink, Nicolaas Lambert, Albert W Marsman filed Critical Koninkl Philips Electronics Nv
Priority to JP2007516106A priority Critical patent/JP2008503085A/ja
Priority to EP05745512A priority patent/EP1759392A2/fr
Publication of WO2005124787A2 publication Critical patent/WO2005124787A2/fr
Publication of WO2005124787A3 publication Critical patent/WO2005124787A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

La présente invention concerne dispositif électrique (fig. 6) possèdent une résistance programmable (PR) connecté en série à une diode de claquage (S). Cette invention concerne aussi un procédé de fabrication de ce dispositif électrique. Ce procédé consiste : à prendre lune pile comprenant une première couche d'un matériau semi-conducteur d'un premier type de conductivité agencée entre une deuxième couche est une troisième couche d'un matériau semi-conducteur d'une seconde conductivité de type opposé au premier type de conductivité et, à prendre une couche de matériau possédant une résistivité programmable, cette couche de matériau possédant la résistivité programmable en contact électrique avec la deuxième et la troisième couche de matériau semi-conducteur.
PCT/IB2005/051893 2004-06-16 2005-06-09 Dispositif electrique et procede de fabrication de ce dispositif WO2005124787A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007516106A JP2008503085A (ja) 2004-06-16 2005-06-09 電気デバイスおよびその製造方法
EP05745512A EP1759392A2 (fr) 2004-06-16 2005-06-09 Dispositif electrique et procede de fabrication de ce dispositif

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04102744 2004-06-16
EP04102744.2 2004-06-16

Publications (2)

Publication Number Publication Date
WO2005124787A2 WO2005124787A2 (fr) 2005-12-29
WO2005124787A3 true WO2005124787A3 (fr) 2006-03-16

Family

ID=34979040

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/051893 WO2005124787A2 (fr) 2004-06-16 2005-06-09 Dispositif electrique et procede de fabrication de ce dispositif

Country Status (6)

Country Link
EP (1) EP1759392A2 (fr)
JP (1) JP2008503085A (fr)
KR (1) KR20070049139A (fr)
CN (1) CN101006517A (fr)
TW (1) TW200614234A (fr)
WO (1) WO2005124787A2 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8895949B2 (en) 2012-02-17 2014-11-25 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US8901530B2 (en) 2012-01-19 2014-12-02 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a passive current steering element
US8912524B2 (en) 2011-09-01 2014-12-16 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US9472301B2 (en) 2013-02-28 2016-10-18 Sandisk Technologies Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US9590013B2 (en) 2010-08-23 2017-03-07 Crossbar, Inc. Device switching using layered device structure
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135659A (ja) * 2006-11-29 2008-06-12 Sony Corp 記憶素子、記憶装置
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
JP2009199695A (ja) * 2008-02-25 2009-09-03 Toshiba Corp 抵抗変化メモリ装置
US7869258B2 (en) * 2008-06-27 2011-01-11 Sandisk 3D, Llc Reverse set with current limit for non-volatile storage
US9030867B2 (en) 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
JP4778117B2 (ja) 2009-05-28 2011-09-21 パナソニック株式会社 メモリセルアレイ、メモリセルアレイの製造方法、不揮発性記憶装置、および、クロスポイント型のメモリセルアレイを構成するメモリセル
US8208285B2 (en) * 2009-07-13 2012-06-26 Seagate Technology Llc Vertical non-volatile switch with punchthrough access and method of fabrication therefor
US8274130B2 (en) 2009-10-20 2012-09-25 Sandisk 3D Llc Punch-through diode steering element
US8017433B2 (en) * 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
JP5566217B2 (ja) * 2010-07-30 2014-08-06 株式会社東芝 不揮発性記憶装置
JP5075959B2 (ja) 2010-09-14 2012-11-21 株式会社東芝 抵抗変化メモリ
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) * 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US8462580B2 (en) * 2010-11-17 2013-06-11 Sandisk 3D Llc Memory system with reversible resistivity-switching using pulses of alternatrie polarity
JP5442876B2 (ja) 2010-12-03 2014-03-12 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
CN102623045B (zh) * 2011-01-27 2014-10-29 中国科学院微电子研究所 阻变型随机存储单元及存储器
CN102750979B (zh) * 2011-04-21 2015-05-13 中国科学院微电子研究所 阻变存储器单元
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
WO2013046217A2 (fr) * 2011-06-13 2013-04-04 Indian Institute Of Technology Bombay Dispositif de sélection pour mémoire rram bipolaire
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
JP5763004B2 (ja) 2012-03-26 2015-08-12 株式会社東芝 不揮発性半導体記憶装置
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device

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US4254427A (en) * 1978-02-10 1981-03-03 U.S. Philips Corporation Semiconductor device having a compact read-only memory
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
EP1381054A1 (fr) * 2002-07-12 2004-01-14 Pioneer Corporation Dispositif mémoire organique

Family Cites Families (1)

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JP2002541682A (ja) * 1999-04-08 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ パンチスルーダイオード及び同ダイオードを製造する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254427A (en) * 1978-02-10 1981-03-03 U.S. Philips Corporation Semiconductor device having a compact read-only memory
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
EP1381054A1 (fr) * 2002-07-12 2004-01-14 Pioneer Corporation Dispositif mémoire organique

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9590013B2 (en) 2010-08-23 2017-03-07 Crossbar, Inc. Device switching using layered device structure
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8912524B2 (en) 2011-09-01 2014-12-16 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
US8901530B2 (en) 2012-01-19 2014-12-02 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a passive current steering element
US8895949B2 (en) 2012-02-17 2014-11-25 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US9472301B2 (en) 2013-02-28 2016-10-18 Sandisk Technologies Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same

Also Published As

Publication number Publication date
JP2008503085A (ja) 2008-01-31
EP1759392A2 (fr) 2007-03-07
KR20070049139A (ko) 2007-05-10
WO2005124787A2 (fr) 2005-12-29
TW200614234A (en) 2006-05-01
CN101006517A (zh) 2007-07-25

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