WO2005106987A1 - Systeme de couches pour diode luminescente organique - Google Patents

Systeme de couches pour diode luminescente organique Download PDF

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Publication number
WO2005106987A1
WO2005106987A1 PCT/DE2005/000820 DE2005000820W WO2005106987A1 WO 2005106987 A1 WO2005106987 A1 WO 2005106987A1 DE 2005000820 W DE2005000820 W DE 2005000820W WO 2005106987 A1 WO2005106987 A1 WO 2005106987A1
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WIPO (PCT)
Prior art keywords
layer
arrangement according
lower electrode
protective
modification
Prior art date
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PCT/DE2005/000820
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German (de)
English (en)
Inventor
Jan Blochwitz-Nimoth
Jan Birnstock
Original Assignee
Novaled Ag
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Publication date
Application filed by Novaled Ag filed Critical Novaled Ag
Priority to JP2007511849A priority Critical patent/JP2007536717A/ja
Publication of WO2005106987A1 publication Critical patent/WO2005106987A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Definitions

  • the invention relates to an arrangement with an organic light-emitting diode (OLED) as well as a display element and a lighting device using the arrangement.
  • OLED organic light-emitting diode
  • OLEDs are also used in lighting elements. The advantage of OLEDs is their high energy efficiencies, their low operating voltages and the possibility of producing flat-emitting components in any color.
  • organic light-emitting diodes are flat components.
  • OLEDs an organic layer area with one or more layers of organic material is embedded between two electrodes, at least one of which must be transparent.
  • Conductive oxides so-called TCOs ("transparent conductive oxides"), are generally used for the transparent of the two electrodes. If the electrode between a substrate on which the electrodes and the organic layer area are arranged and the organic layer area (lower electrode) is transparent, one speaks of a “bottom emission OLED”, and the other electrode (upper electrode) is transparent it is a "top emission OLED”. Components in which both electrodes are transparent can also be formed. With all different construction methods, the emitted light is generated in a so-called emission zone on the basis of radiative recombination of electrons and defect electrons (holes). The light leaves the component through the transparent electrode.
  • the lower electrode which is on the substrate, has to fulfill a number of properties.
  • ITO has found a satisfactory solution for bottom-emitting components.
  • top-emitting components however, the selection of a suitable electrode material is difficult.
  • Top-emitting OLEDs are required in order to be able to integrate OLEDs in so-called backplanes (forms the substrate) of active matrix displays.
  • the backplanes with their TFT electronics circuit (TFT - "thin film transistor") and a final contact are preferably manufactured in a factory for amorphous-Si (a-Si) or polycrystalline-Si (poly-Si) backplane production , Then they are transported to the location of the OLED production, preferably in air.
  • the OLED is then applied to the final upper contact of the backplane, for example by vacuum evaporation.
  • the top contact of the backplane forms the basic contact for the OLED.
  • Areas between the display elements of a display device manufactured in this way are separated from one another with the aid of a structured insulation layer.
  • the insulation layer is also manufactured in the a-Si or poly-Si factory.
  • a layer arrangement with an OLED in top-emitting design is known from document US 2002/0117962 AI.
  • the top electrode of the OLED is a transparent cathode.
  • the lower anode of the OLED which is arranged on a substrate, is formed with the aid of several layers.
  • a metal layer which can also be a stack of several metal layers, is arranged on the substrate. Different metals or alloys are proposed for the metal layer, with which an anode suitable for the OLED can be formed.
  • the metal layer has an excellent reflectivity for light of the visible spectrum.
  • a barrier layer is applied to the metal layer, which can also be multi-layered.
  • the material of the barrier layer can be conductive or insulating.
  • the metal layer is physically and chemically separated from an anode modification layer arranged on the barrier layer.
  • the material for the anode modification layer can also be conductive or insulating.
  • the work function for the holes from the anode is set and a stable interface to the organic layer area located above is made possible.
  • US 2002/0117962 AI different embodiments for materials and layer thicknesses for both Metal layer as well as the barrier layer and the anode modification layer described.
  • the multilayer structure of the anode in the known OLED complicates the manufacturing process.
  • the object of the invention is therefore to provide an improved layer arrangement for an OLED and an improved display device / lighting device using the arrangement, which can be produced with reduced effort and inexpensively.
  • the invention encompasses the idea of providing a layer arrangement for an organic light-emitting diode (OLED) in a top-emitting embodiment, with a lower electrode, an upper electrode which is transparent, and an organic layer region which is in contact with the lower and the upper Electrode is arranged between the two electrodes and in which, by means of recombination of electrons and holes, light can be generated which exits through the upper electrode, the lower electrode having a layer structure in which a lower electrode layer is a metal layer, the lower structure in the layer structure A protective and modification layer is arranged on the metal layer and is in contact with the organic layer region.
  • OLED organic light-emitting diode
  • a significant advantage which is achieved with the aid of the invention compared to the prior art, is that the layer structure of the lower electrode is simpler with a top-emitting OLED and, moreover, the diverse requirements for such a contact layer described below are better met.
  • the following advantageous properties can be achieved with the aid of a suitable choice of materials and thicknesses for the layers of the lower electrode: i. high reflectivity for light in the visible spectral range, ii. low electrical resistance, iii. low roughness, iv. Adaptability of the work function for the injected charge carriers with regard to the organic layer area, v. Avoiding the formation of surface layers under normal environmental influences (oxygen, moisture), which reduce the properties of the OLED on this layer system, for example due to barrier formation for charge carrier injection from the contact layers into the layers of the OLED, and vi. Structurability of the electrode.
  • FIG. 1 shows a schematic cross-sectional representation of a layer structure for a lower electrode of a top-emitting OLED
  • FIG. 2 shows a schematic cross-sectional illustration of a section of a display device with OLEDs using a lower electrode according to FIG. 1;
  • 3 A and 3B are schematic cross-sectional representations of a layer structure with an OLED in normal construction and inverted construction, an organic layer region being constructed in one layer;
  • 4A and 4B are schematic cross-sectional representations of a layer structure with an OLED in normal construction and inverted construction, an organic layer region being constructed in multiple layers;
  • 5A and 5B are schematic cross-sectional representations of a layer structure with an OLED in normal construction and inverted construction, an organic layer region having a p-doped hole transport layer and an n-doped electron transport layer; and 6A and 6B are schematic cross-sectional representations of a layer structure with an OLED in normal construction and inverted construction, an organic layer region having a p-doped hole transport layer, an n-doped electron transport layer and intermediate layers.
  • the layer structure for the lower electrode 10 according to FIG. 1 comprises the following layers:
  • a layer 11a of metal is provided as the bottom layer with a thickness between 10 nm and 500 nm, preferably between 40 nm and 150 nm, which has the following properties:
  • the conductivity is so great that a given current can be reached without high voltage drop can be transported.
  • the voltage drop is less than about 0.2V.
  • the sheet resistance of the metal layer 11a is less than 10 ⁇ / sq. , preferably less than 1 ⁇ / sq. -
  • the roughness is low.
  • less than 2 nm RMS preferably less than 1 nm RMS.
  • These properties are achieved using metals such as Cr, Ti, Mo, Ta or the like, or mixtures thereof, for example CrMo.
  • AI can also be used as a material if the layer thickness is less than 75nm.
  • the metal materials are processed by means of sputtering, thermal evaporation or electron beam evaporation.
  • the layer 11a is preferably made of the same material that is used when using an OLED with a lower electrode, which is designed according to the invention, in a display device or a lighting device in a backplane for contact connections that conduct the current to the display elements with the OLED. These contact connections typically have a thickness of approximately 150 nm.
  • a further layer 1 lb of metal is provided with a thickness between approximately 5 nm and 80 nm, preferably between approximately 15 nm and 40 nm.
  • the further layer 11b forms in a stack together with layer 1 1a a metal layer 12 for the lower electrode 10.
  • the metal layer 12 has the following properties: The reflectivity is greater than approximately 50%, preferably greater than approximately 80%. - The conductivity is so high that a given current can be transported without an excessive voltage drop. The voltage drop is less than about 0.2V.
  • the sheet resistance of metal layer 12 formed from layers 11a and 1 lb is less than about 10 ⁇ / sq. 3 preferably less than about 1 ⁇ / sq.
  • the roughness is low, typically less than about 2 nm RMS, preferably less than about 1 nm RMS.
  • the further layer 11b made of metal has a high reflectivity. Suitable metals are, for example, Al, Ag or alloys with a high proportion (> 50%) of the reflective materials, for example AlTi alloys.
  • the material for the further layer 11b is processed by means of sputtering, thermal evaporation or electron beam evaporation. With the help of a small layer thickness of the further layer 11b it is ensured that the total roughness of the stack for the metal layer 12 is still below approximately 2 nm RMS, preferably below approximately 1 nm RMS.
  • a protection and modification layer 13 made of a metal, an oxide or a nitride with a thickness between approximately 2 nm and approximately 50 nm, preferably between approximately 5 nm and 30 nm, is also provided.
  • the stack with the metal layer 12 and the protection and modification layer 13 has the following properties:
  • the layer structure with the metal layer 12 and the protection and modification layer 13 can be structured, for example by means of etching.
  • the work function of the stack is adapted to a subsequent organic layer area.
  • the protection and modification layer 13 protects the layers 11a, 11b below by preventing oxidation.
  • the reflectivity is greater than about 50%, preferably greater than about 80%.
  • the conductivity of the layer is so high that it can transport a given current without too high a voltage drop.
  • the voltage drop is less than about 0.2V.
  • the surface resistance of the stack is typically less than about 10 ⁇ / sq., Preferably less than about 1 ⁇ / sq.
  • the roughness is low, typically less than about 2 nm RMS, preferably less than about 1 nm RMS.
  • the protection and modification layer 13 thus protects the layers 11a, 11b underneath from oxidation during transport of the backplane and from degradation during further processing.
  • These properties can be achieved by using, for example, the following materials for the protection and modification layer 13: Ti y N x , ITO, Cr, Mo, Ta, Ti, Ni, Ni y O x , Ti y O x , Ni y N x , Pd y O x , Pt y O x , Pd y N x , Pt y N x and others, where x and y may be in the range of 1..4.
  • the materials are processed by means of sputtering, thermal evaporation or electron beam evaporation.
  • the layer 11a is made of Mo or Cr
  • the further layer 11b is made of Al or Ag
  • the protection and modification layer 13 is made of TiN or TiO x .
  • the metal layer 12 comprises the layer 11a and the further layer 11b, which are each described in detail above.
  • An alternative embodiment (not shown) of the lower electrode 10 differs from this in that the metal layer 12 has a single layer.
  • the single-layer metal layer is then carried out by means of a suitable choice of the material and layer thickness used so that it has the features described above for the metal layer 12 as a single layer, for example with regard to the reflectivity, the conductivity and the roughness.
  • the stack when used in a display device or a lighting device, the stack is structured with the layers 11a, 11lb before the protective and modification layer 13 is applied. The protection and modification layer 13 is then applied unstructured.
  • the functionality of the lower electrode 10 can also be retained if the protective and modification layer 13 is not structured.
  • the transverse conductivity of the protection and modification layer 13 must then be so low that when using the lower electrode 10 for OLEDs in a display or lighting device, no short circuit between two adjacent display / lighting elements (pixels) is caused (cross-talk low) ).
  • the stack with the layer 11a, the further layer 11b and the protection and modification layer 13 is applied over a large area, then structured laterally, for example by means of an etching process.
  • the protection and modification layer 13 protects the layers 11a, 11b from damage during further processing. If no etching process is available with which the stack with the layer 11a, the further layer 11b and the protection and modification layer 13 can be structured together, the following process variants can alternatively be provided:
  • connection points for the external electronics.
  • the layer 11a is structured in such a way that it also forms lateral display connections for connecting the display to external control electronics. These connections are usually made by bonding flat cables.
  • the type of structuring explained under a) can also be carried out after the layer 11a and the further layer 11b, that is to say the metal layer 12, have been applied.
  • the metal layer 12 and the protection and modification layer 13 are applied and structured individually or together in such a way that the layer combination also forms the connections for the external electronics.
  • a procedure according to process variants (2) and (3) presupposes that damage to the further layer 11b, which occurs when the layer 11a and the further layer 11b are structured, is so small that charge carriers are still effectively removed from the further layer 11b can be injected into the protection and modification layer 13. Furthermore The further layer 1 lb must not be damaged if the protection and modification layer 13 is structured (process variant 3).
  • a layer structure for the lower electrode 10, as described with reference to FIG. 1, can be used both in connection with an OLED in normal construction, in which the lower electrode is formed as an anode and light is emitted through an overhead transparent cathode. as well as in an OLED with an inverted structure, in which the cathode is formed with the aid of the lower electrode and light is emitted through a transparent anode located on top.
  • An OLED with such a lower electrode can be used in particular for a display device 20 with display elements 20a, 20b, as shown in FIG. 2.
  • FIG. 2 shows a schematic cross-sectional representation of the display element 20, in which a back layer 22 is arranged on a substrate 21, which serves as a passivation layer on the one hand and in which electronic components are formed on the other hand, which serve to control OLEDs 23, 24.
  • the back layer 22 is, for example, based on the known Si electronics, that is to say with structured or unstructured layers made of doped or undoped Si and structured or unstructured passivation layers made of oxides or nitrides of Si.
  • Lower electrodes 23 a, 24 a for the OLEDS 23, 24 are applied to the back layer 22.
  • the lower electrodes 23a, 24a are designed in accordance with one of the embodiments as explained in detail above in connection with FIG. 1.
  • the lower electrodes 23a, 24a are connected to a respective organic region 23b, 24b in which light 25 is emitted.
  • An upper electrode 26 extends above the organic regions 23b, 24b.
  • a structured insulation layer 27 is provided according to FIG.
  • FIG. 2 The use of the lower electrode 10 has been described in FIG. 2 for a display device 20. The explanations apply accordingly to a lighting device using several OLEDs with the lower electrode according to FIG. 1.
  • FIGS. 3 to 6 the following describes embodiments for an arrangement with an OLED, in which the lower electrode 10 is formed according to one of the embodiments explained with reference to FIG. 1, namely as a layer structure with the metal layer 12 can be made in one or more layers, and the protective and modification layer 13.
  • the layer structure is shown in FIGS. Chen schematically indicated in the longitudinal direction of the respective lower electrode.
  • the arrangements described in FIGS. 3 to 6 can be used in connection with display devices or lighting devices, as have been explained by way of example with reference to FIG. 2.
  • the various embodiments in FIGS. 3 to 6 are described for OLEDs in normal construction and inverted construction.
  • the inverted design has the advantage over the normal design that simple integration of the OLED with associated driver electronics is made possible, for example by means of CMOS technology or with amorphous n-channel Si TFTs.
  • the arrangement of the cathode below the organic layer area has the advantage that the cathode is better protected against environmental influences such as oxygen or water.
  • Environmental influences on the cathode materials on top can have an adverse effect on the long-term stability of the component, for example due to signs of detachment of the upper electrode. This can lead to problems with long-term stability due to partial vias (pin holes).
  • FIGS. 3A and 3B show a schematic cross-sectional representation of a layer structure with an OLED in normal construction (see FIG. 3A) and in inverted construction (see FIG. 3B).
  • an organic area O in which light is emitted by means of recombination of electrons and holes, has a single layer and, corresponding to the simplest structure of an OLED, is arranged between an anode A and a cathode K.
  • the stack with anode A, cathode K and organic layer region O is arranged on a substrate S.
  • FIGS. 4A and 4B show schematic cross-sectional representations of a layer structure with an OLED in normal construction (cf. FIG. 4A) and in inverted construction (cf. FIG. 4B).
  • the organic layer region O is embodied in multiple layers.
  • An electron transport layer 40 takes over the transport function for the electrons.
  • a hole transport layer 41 takes over the transport function for the solder rather.
  • Light is emitted due to the recombination of electrons and holes in a boundary area 42 between the electron transport layer 40 and the hole transport layer 41, both of which are formed from an organic material.
  • the boundary region can also be formed as an extra layer with the aid of another organic material.
  • FIG. 5A and 5B show schematic cross-sectional representations of a layer structure with an OLED in normal construction (cf. FIG. 5A) and in inverted construction (cf. FIG. 5B).
  • the organic layer region O is of multilayer design.
  • a p-doped hole transport layer 50, an n-doped electron transport layer 51 and a light-emitting layer 52 are provided in the organic layer region O.
  • doping is understood to be the targeted influencing of the conductivity of a semiconductor layer by adding foreign atoms / molecules.
  • Doped charge carrier transport layers are described as such in various embodiments, for example in document DE 102 15 210 AI.
  • the layer sequence of an OLED can be reversed (cf. FIG. 5B), so that the hole-injecting contact (anode A) is implemented as a cover electrode.
  • the hole-injecting contact anode A
  • the operating voltages are much higher with inverted organic light-emitting diodes than with comparable non-inverted structures.
  • the reason for this is the poorer injection from the contacts into the organic layer area O, because the work function of the contacts can no longer be specifically optimized.
  • a thin space charge zone is created in the doped charge carrier transport layers 50, 51 on the electrodes A, K, through which the charge carriers (electrons / holes) can be injected efficiently. Due to the tunnel injection, the injection is no longer hindered even with an energetically high barrier due to the very thin space charge zone.
  • the respective charge carrier transport layers 50, 51 are advantageously doped by admixing an organic or inorganic substance (dopant). These big moles coolers are stably built into the matrix molecular structure of the charge carrier transport layers 50, 51. This ensures high stability when operating the OLED (no diffusion) and under thermal stress.
  • acceptor-like molecules are used as dopants, and donor-like molecules are used for the electron transport layer.
  • the reason for the increase in conductivity is an increased density of equilibrium charge carriers in the doped layers.
  • the electron transport layer 51 can have thicker layers than is possible with undoped layers (with undoped layers typically a thickness between approximately 20 nm and approximately 40 mm) without drastically increasing the operating voltage.
  • the hole transport layer 50 can also be made thicker than would be possible with undoped layers, without this leading to an increase in the operating voltage. So both layers are thick enough to protect the layers underneath from damage during the manufacturing process.
  • FIG. 6A and 6B show a schematic cross-sectional representation of a layer structure with an OLED in normal construction (cf. FIG. 6A) and in inverted construction (cf. FIG. 6B), the OLEDs compared to the embodiments according to FIG. 5A and 5B additionally have intermediate layers in the organic layer region O.
  • the substances of the intermediate layers 62, 63 are selected so that when the voltage is applied in the direction of the operating voltage, the majority charge carriers (holes or electrons) at the boundary layer doped charge carrier transport layer / intermediate layer are not excessively hindered due to their energy levels (low barrier), but the minority carriers efficiently at the interface between light emitting layer 64 and intermediate layer 62, 63 are held open (high barrier). Furthermore, the barrier height for the injection of charge carriers from the intermediate layer 62, 63 into the emitting layer 64 should be so small that the conversion of a pair of charge carriers at the interface into an exciton in the emitting layer 64 is energetically advantageous. This prevents exclex formation at the interfaces of the light-emitting layer 64, which reduces the efficiency of the light emission.
  • the intermediate layers 62, 63 can be chosen to be very thin, since it is nevertheless not possible for the charge carriers to tunnel out of the light-emitting layer 64 into the energy states of the charge carrier transport layers 60, 61. This allows a low operating voltage to be achieved despite intermediate layers 62, 63. Under certain circumstances, the intermediate layers 62, 63 can also consist of the same material as the matrix material of the charge carrier transport layers 60, 61.
  • One embodiment comprises the following layer arrangement with a normal construction:
  • thin hole-side intermediate layer 62 made of a material whose band layers match the band layers of the layers surrounding them,
  • light-emitting layer 64 (possibly doped with emitter dye),
  • thin electron-side intermediate layer 63 made of a material, the band layers of which match the band layers of the layers surrounding them,
  • FIG. 6B Another embodiment (see FIG. 6B) comprises the following layer arrangement in the case of an inverted construction:
  • thin electron-side intermediate layer 63 made of a material, the band layers of which match the band layers of the layers surrounding them,
  • light-emitting layer 64 (possibly doped with emitter dye)
  • thin hole-side intermediate layer 62 made of a material whose band layers match the band layers of the layers surrounding them,
  • the functions of charge carrier injection and charge carrier transport in the charge carrier transport layers 60, 61 can be divided into several layers, at least one of which is doped to the respective electrode A, K. If the doped layer is not located directly at the respective electrode A, K, then all layers between the doped layer and the respective electrode A, K must be so thin that charge carriers can tunnel through them efficiently (approximately ⁇ 10 nm). These layers can be thicker if they have a very high conductivity, the sheet resistance of these layers must be lower than that of the neighboring doped layer.
  • the intermediate layers are to be regarded as part of the electrode A, K.
  • the molar doping concentrations are typically in the range from 1:10 to 1: 10000.
  • the dopants are organic molecules with molecular weights above about 200 g / mol.

Abstract

La présente invention concerne un système de couches destiné à une diode luminescente organique (OLED) dans un mode de réalisation à émission par le dessus, ainsi qu'un dispositif d'affichage et un dispositif d'éclairage comprenant ce système de couches. Le système de couches comprend une électrode inférieure (A), une électrode supérieure (K) qui est transparente, et une zone de couche organique (O) qui est disposée entre l'électrode inférieure et l'électrode supérieure (A; K), en contact avec celles-ci, et dans laquelle la recombinaison d'électrons et de trous peut permettre la production de lumière qui sort par l'électrode supérieure (K). Selon l'invention, l'électrode inférieure (A) présente une structure en couches dans laquelle une couche inférieure d'électrode est une couche métallique. Dans la structure en couches de l'électrode inférieure (A), la couche métallique est recouverte d'une couche de protection et de modification qui est en contact avec la zone de couche organique (O).
PCT/DE2005/000820 2004-05-03 2005-05-02 Systeme de couches pour diode luminescente organique WO2005106987A1 (fr)

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JP2007511849A JP2007536717A (ja) 2004-05-03 2005-05-02 有機発光ダイオード用の層配置

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DE102004022004.2 2004-05-03
DE102004022004A DE102004022004B4 (de) 2004-05-03 2004-05-03 Schichtanordnung für eine organische lichtemittierende Diode

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KR (1) KR20070009730A (fr)
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DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
WO2011157385A2 (fr) 2010-06-14 2011-12-22 Novaled Ag Dispositif électroluminescent organique
EP2525629A1 (fr) * 2010-09-21 2012-11-21 Mitsui Mining & Smelting Co., Ltd Feuille d'électrode et dispositif organique
EP2579686A1 (fr) * 2010-06-04 2013-04-10 Mitsui Mining & Smelting Co., Ltd Feuille d'électrode et dispositif organique
WO2013083712A1 (fr) 2011-12-06 2013-06-13 Novaled Ag Dispositif électroluminescent organique et procédé de production

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DE102008053326A1 (de) 2008-07-25 2010-01-28 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung
KR101069520B1 (ko) * 2008-10-01 2011-09-30 주식회사 엘지화학 유기발광소자 및 이의 제조방법
US8963415B2 (en) 2010-11-15 2015-02-24 Panasonic Corporation Organic EL element, display panel, and display device
US20140000684A1 (en) * 2010-12-03 2014-01-02 Jan Blochwitz-Nimoth Method for forming an electrical interconnection in an organic photovoltaic device and an organic photovoltaic device made by the same
KR102061937B1 (ko) * 2017-08-29 2020-01-03 서울대학교산학협력단 투명 소자 및 이를 포함하는 투명 디스플레이 장치
CN112259703B (zh) * 2020-10-21 2023-12-01 安徽熙泰智能科技有限公司 一种硅基oled微显示器的制备方法

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US9490440B2 (en) 2010-06-04 2016-11-08 Mitsui Mining & Smelting Co., Ltd. Electrode foil and organic device
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US9178173B2 (en) 2010-06-14 2015-11-03 Novaled Ag Organic light emitting device
EP2525629A4 (fr) * 2010-09-21 2013-07-10 Mitsui Mining & Smelting Co Feuille d'électrode et dispositif organique
US8586976B2 (en) 2010-09-21 2013-11-19 Mitsui Mining & Smelting Co., Ltd. Electrode foil and organic device
EP2525629A1 (fr) * 2010-09-21 2012-11-21 Mitsui Mining & Smelting Co., Ltd Feuille d'électrode et dispositif organique
WO2013083712A1 (fr) 2011-12-06 2013-06-13 Novaled Ag Dispositif électroluminescent organique et procédé de production
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KR20070009730A (ko) 2007-01-18
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DE102004022004A1 (de) 2005-12-15
JP2007536717A (ja) 2007-12-13

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