WO2005098382A1 - Capteur de temperature et procede pour regler un tel capteur de temperature - Google Patents

Capteur de temperature et procede pour regler un tel capteur de temperature Download PDF

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Publication number
WO2005098382A1
WO2005098382A1 PCT/EP2005/003559 EP2005003559W WO2005098382A1 WO 2005098382 A1 WO2005098382 A1 WO 2005098382A1 EP 2005003559 W EP2005003559 W EP 2005003559W WO 2005098382 A1 WO2005098382 A1 WO 2005098382A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature sensor
base substrate
sensitive layer
layer
sensor according
Prior art date
Application number
PCT/EP2005/003559
Other languages
German (de)
English (en)
Inventor
Wolfgang Wittenhagen
Original Assignee
E.G.O. Elektro-Gerätebau GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E.G.O. Elektro-Gerätebau GmbH filed Critical E.G.O. Elektro-Gerätebau GmbH
Publication of WO2005098382A1 publication Critical patent/WO2005098382A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers

Definitions

  • the invention relates to a temperature sensor with a base substrate on which a sensitive layer made of a material with temperature-dependent resistance is applied.
  • Such temperature sensors are used in a large number of application areas. They are based on a resistance measurement using a current conducted through the sensitive layer.
  • the sensitive layer consists of a material that changes its specific resistance depending on the temperature. The materials used have either an increasing specific resistance or a decreasing specific resistance with increasing temperature.
  • the base substrate of the temperature sensor is used to attach the sensitive layer and is itself not electrically conductive.
  • Various methods such as thin-film technology and thick-film technology are known for applying the sensitive layer to the base substrate.
  • the LTCC technique (“low temperature cofired ceramics” technique) is a technique for the production of circuits which are formed with the aid of several layers of LTCC foils, on each of which conductor tracks are applied.
  • the composite of these various layers stacked one on top of the other is sintered in a process furnace after completion, with relatively low temperatures in the range between 900 ° C. and 1000 ° C. being customary.
  • the LTCC materials contain glass, ceramics and organic solvents in the unfired state.
  • the LTCC technology allows a very compact design of circuits by stacking almost any number of layers.
  • the low sintering temperature allows materials with a low melting point to be used for the conductor tracks.
  • the object of the invention is to provide a temperature sensor which can be produced inexpensively and which functions reliably at high temperatures and high air humidity.
  • a temperature sensor with a base substrate, to which a sensitive layer made of a material with temperature-dependent resistance is applied is provided, the base substrate having a layer made of an LTCC material.
  • the use of an LTCC material allows the use of sensitive layers made of materials with a low melting point. Since the sintering temperature of the LTCC material is not significantly above 900 ° C, the sensitive layer can consist of gold or silver, for example.
  • the LTCC material which is usually in sheet form in the unsintered state, can cover the sensitive layer from two sides, so that the sensitive layer after a pressing / laminating process and sintering process is virtually embedded in the LTCC material and itself has no contact with the surroundings.
  • connection lines of the temperature sensor are also located in a high temperature area
  • the base substrate of the temperature sensor in such an, for example elongated, shape that allows a first section of the temperature sensor to be connected to the sensitive layer is arranged in the area of high temperature, while a second section with the connections of the temperature sensor is arranged in an area of lower temperature.
  • this prevents the connections from being damaged by the high Temperature damage, and on the other hand ensures that the temperature measurement remains free of unwanted side effects.
  • Conventional welding and soldering processes can be used to fasten the connecting wires, with brazing processes in particular being preferred.
  • detachable plug connections with and without additional plating or connecting lugs are also expedient.
  • the layer made of LTCC preferably the entire base substrate, is densely sintered.
  • the material of the sensitive layer has platinum.
  • Platinum is particularly suitable for temperature measurement, particularly because of its linear behavior between temperature and resistance over a wide temperature range. It provides very precise results and also has a very quick response to changes in temperature.
  • the sensitive layer is essentially completely, preferably completely in a larger area, surrounded by one or more layers of the base substrate. In this way, the service life of the temperature sensor is increased because the sensitive sensitive layer is not in direct contact with the surroundings. In addition, the accuracy of the temperature measurement is increased by preventing disruptive factors such as high air humidity on the sensitive layer.
  • the sensitive layer at least partially in an access area, is not dependent on a position of the basic substance. strats enclosed, preferably the access area is designed for a subsequent passivation and in particular the sensitive layer is formed in this access area for resistance adjustment of the total resistance of the temperature sensor by changing the active length of the layer
  • the sensitive layer can be influenced through the access area, while the resistance of the temperature sensor is measured either continuously or at short intervals.
  • the sensitive layer can be adapted, for example, by means of a laser, with which material is removed from the sensitive layer, so that the specific resistance changes in relation to a known temperature.
  • the access area leads to direct contact of the sensitive layer with the surroundings, but since the access area need not be large, this affects the temperature measurement only insignificantly.
  • the access area can be designed for a subsequent passivation. This allows the access area to be closed after calibration of the temperature sensor, for example by means of a glass layer.
  • the sensitive layer is passivated, at least in the access area not enclosed by the base substrate, preferably through a glass layer.
  • two or more layers of the base substrate are provided, each of which has a sensitive layer, the sensitive layers being connected in series or in parallel. In this way it is possible to achieve a large sensitive layer with a compact construction of the temperature sensor. If the sensitive layers of the different layers are connected in series, the result is that the resistance is increased. This allows a more accurate measurement of the temperature. In addition, the relative influence of interference in the resistance measurement signal is reduced if the measurement signal has an absolutely high value.
  • the temperature sensor has mechanical stabilizing means which at least partially enclose the base substrate, the stabilizing means preferably being designed in the manner of a clamp.
  • the stabilizing means can be designed in such a way that they have connecting means for the specific application, for example holding arms, by means of which the temperature sensor is attached to the position provided for this purpose.
  • Stabilizing means designed as a sheet metal holder can comprise narrow sheet metal rods which hold the temperature sensor from all sides and yet do not cause a disruptive insulating effect between the surroundings and the actual temperature sensor. This prevents the response times of the temperature sensor from being greatly increased.
  • the sensitive layer is provided in an elongated shape on the base substrate, preferably in a spiral or meandering shape. This ensures that a high resistance is achieved in relation to the surface of the sensitive layer. A high resistance in turn allows a more precise temperature measurement and means that the measurement results are hardly influenced by other influencing factors such as the resistance of the connecting cables.
  • the sensitive layer is applied to the base substrate using thick-film technology.
  • Thick-film technology represents an inexpensive way of applying the sensitive layer.
  • the layers applied in this way to the substrate are mechanically robust and not sensitive to high temperatures.
  • the adjustment of a temperature sensor according to the invention can be carried out by means of a method in which, in a first step, the sensitive layer in a region not enclosed by the base substrate is changed or structured with a laser beam, while the resistance value of the sensor is measured, the structuring being achieved after it has been reached a target resistance value is terminated and in a second step passivation is carried out at least of the area of the temperature sensor not enclosed by the base substrate.
  • FIG. 1 is an exploded view of a temperature sensor according to the invention in a first embodiment during the adjustment process
  • FIG. 2 shows the temperature sensor in the first embodiment in the sintered and adjusted state
  • FIG. 3 shows an exploded view of a temperature sensor according to the invention in a second embodiment after the adjustment process
  • the temperature sensor is constructed from a total of three LTCC ceramic layers 10a, 10b, 10c. Meandering platinum layers 12b, 12c are applied to two of the LTCC ceramic layers 10a, 10b, 10c. The platinum layers 12b, 12c are connected to one another and to connections 14a, 14b. For this purpose, through-contacts 16a, 16b through the LTCC ceramic layer 10a and through-contacts 18a, 18b through the LTCC ceramic layer 10b are provided. As a consequence, the platinum layers 12b, 12c of the LTCC ceramic layers 10b, 10c are connected in series.
  • two adjacent conductor sections 22, 24 are connected to one another by a total of 17 conductor bridges 26. These conductor bridges allow the temperature sensor to be adjusted by increasing the overall resistance of the temperature sensor by cutting through individual conductor bridges.
  • the uppermost LTCC ceramic layer 10a has an access opening 28 which is arranged above the adjustment region 20.
  • the individual layers of the LTCC temperature sensor After the individual layers of the LTCC temperature sensor have been prepared in the manner shown in FIG. 1, they are first positioned exactly one above the other and pressed using a uniaxial press. This pressing can be carried out, for example, between two heated plates aligned parallel to one another. In addition, isostatic lamination is also an option. This process is carried out using a water-filled pressure chamber and ensures an even pressure distribution at the temperature sensor. After the layers of the temperature sensor are connected to one another, the temperature sensor is sintered with a suitable temperature-time profile, the maximum temperature preferably not exceeding 900 ° C. to 1000 ° C. After the sintering process, the next step in the manufacturing process is to adjust the temperature sensor. For this purpose, the resistance of the temperature sensor is measured at a known temperature.
  • the platinum layers 12b, 12c are dimensioned such that the temperature sensor has a slightly lower resistance than the target resistance before the adjustment.
  • This target resistance is achieved by successively severing individual conductor bridges 26 of the platinum layer 12b by means of a laser beam 27 through the access opening 28 provided for this purpose. This compensates for the fluctuations in the resistance caused by the manufacture of the temperature sensor, and it is achieved that all temperature sensors have a resistance with respect to their resistance at a certain temperature, which is within a narrow tolerance range.
  • Fig. 2 shows the finished temperature sensor. It has a total resistance of around 1000 ⁇ at 0 ° C. Other values for the resistance of, for example, 100 ⁇ , 200 ⁇ or 500 ⁇ can also be used. It can be seen that the three layers 10a, 10b, 10c lie flush on one another. The access opening 28 has been closed off by a passivation 30, so that the platinum layer 12b is closed off from the surroundings. Except at the two connections 14a, 14b, there can be nowhere a direct contact between the resistance conductor or its leads and the environment. It can also be seen that mechanical stabilizing means 32 are provided which represent protection against mechanical influences.
  • the mechanical stabilizing means 32 have a sheet metal web 34 which extends in the longitudinal direction of the temperature sensor on its underside and has two protruding sheet metal tongues 36, 38 at two points, which grip around the side of the temperature sensor and connect it non-positively to the stabilizing means.
  • the sheet metal web 34 protrudes on one side beyond the end of the temperature sensor and thus allows the entire temperature sensor at a designated location.
  • the temperature sensor can be installed in such a way that the temperature sensor is only arranged with a first section 40 in an area in which it is exposed to high temperatures, while a second section 42 is located in an area in which lower temperatures prevail. Such an arrangement prevents the connections 14a, 14b or the feed lines to the connections 14a, 14b from being exposed to the high temperatures or causing a significant change in the measurement result.
  • 3 and 4 show another embodiment of a temperature sensor according to the invention.
  • FIGS. 3 and 4 differs from that shown in FIGS. 1 and 2 in that the connections 1 14a, 114b are arranged on the middle ceramic layer 110b instead of on the top one, as is the case with the embodiment of FIGS. 1 and 2 the case is. As a result, the plated-through holes 16a and 16b are not required.
  • the sensitive layer 110b arranged on the LTCC layer 110b is then optionally adjusted. As in the first exemplary embodiment, this can also be done, for example, by means of a laser beam. In addition, adjustment by mechanical separation of the conductor bridges 126 is also possible.
  • the fully adjusted temperature sensor is then provided with a further ceramic layer 110a, which is preferably also an LTCC ceramic layer. With this further Kera- Mic layer 110a is then laminated again and / or sintered again.
  • the further ceramic layer 110a can be applied and sintered using a glass solder.
  • the ceramic layer 110a is shorter than the other two ceramic layers 110b, 110c, so that the connections 114a, 114b arranged on the ceramic layer 110b are not covered by it.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

L'invention concerne un capteur de température dont le substrat de base (10a, 10b, 10c ; 110a, 110b, 110c) est constitué de céramique cocuite à basse température (LTCC). Ce capteur de température comprend plusieurs couches de substrat (10a, 10b, 10c ; 110a, 110b, 110c) entre lesquelles est placée une couche sensible (12b, 12c) en platine présentant une résistance variant avec la température. Comme cette couche (12b, 12c ; 112b, 112c) est complètement entourée par le substrat de base (10a, 10b, 10c ; 110a, 110b, 110c), le capteur de température selon l'invention est très résistant à l'usure et fonctionne de manière fiable et précise, même à très hautes températures ou soumis à d'autres influences extérieures adverses.
PCT/EP2005/003559 2004-04-05 2005-04-05 Capteur de temperature et procede pour regler un tel capteur de temperature WO2005098382A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410017799 DE102004017799A1 (de) 2004-04-05 2004-04-05 Temperatursensor und Verfahren zur Justierung eines solchen
DE102004017799.6 2004-04-05

Publications (1)

Publication Number Publication Date
WO2005098382A1 true WO2005098382A1 (fr) 2005-10-20

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DE (1) DE102004017799A1 (fr)
WO (1) WO2005098382A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2154501A2 (fr) 2008-08-07 2010-02-17 Melexis NV Capteur de température stratifié
CN113567828A (zh) * 2021-06-15 2021-10-29 中国电子科技集团公司第十三研究所 多层低温共烧陶瓷基板的无损失效检测方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005014106B4 (de) * 2005-03-22 2014-02-13 E.G.O. Elektro-Gerätebau GmbH Temperatursensor und Verfahren zur Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901051A (en) * 1987-09-04 1990-02-13 Murata Manufacturing Co., Ltd. Platinum temperature sensor
US5199791A (en) * 1990-06-11 1993-04-06 Murata Manufacturing Co., Ltd. Temperature sensor
US20030076218A1 (en) * 1998-11-11 2003-04-24 Olaf Jach Ceramic layer system and method for producing a ceramic heating device
US20030128096A1 (en) * 2002-01-10 2003-07-10 Joseph Mazzochette Temperature compensating device with integral sheet thermistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4037135A1 (de) * 1990-11-22 1992-05-27 Friedrich Schwibbe Elektrischer antrieb
DE19812690C1 (de) * 1998-03-23 1999-11-18 Siemens Ag Träger für einen temperaturabhängigen Widerstand
US6576972B1 (en) * 2000-08-24 2003-06-10 Heetronix High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901051A (en) * 1987-09-04 1990-02-13 Murata Manufacturing Co., Ltd. Platinum temperature sensor
US5199791A (en) * 1990-06-11 1993-04-06 Murata Manufacturing Co., Ltd. Temperature sensor
US20030076218A1 (en) * 1998-11-11 2003-04-24 Olaf Jach Ceramic layer system and method for producing a ceramic heating device
US20030128096A1 (en) * 2002-01-10 2003-07-10 Joseph Mazzochette Temperature compensating device with integral sheet thermistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2154501A2 (fr) 2008-08-07 2010-02-17 Melexis NV Capteur de température stratifié
EP2154501A3 (fr) * 2008-08-07 2013-07-03 Sensor-Nite Industrial OOD Capteur de température stratifié
CN113567828A (zh) * 2021-06-15 2021-10-29 中国电子科技集团公司第十三研究所 多层低温共烧陶瓷基板的无损失效检测方法

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