WO2005074001A3 - Dispositif d'emission electronique multifaisceaux hybride a divergence controlee - Google Patents

Dispositif d'emission electronique multifaisceaux hybride a divergence controlee Download PDF

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Publication number
WO2005074001A3
WO2005074001A3 PCT/FR2004/003407 FR2004003407W WO2005074001A3 WO 2005074001 A3 WO2005074001 A3 WO 2005074001A3 FR 2004003407 W FR2004003407 W FR 2004003407W WO 2005074001 A3 WO2005074001 A3 WO 2005074001A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
divergence
electron beam
multiple electron
hybrid multiple
Prior art date
Application number
PCT/FR2004/003407
Other languages
English (en)
Other versions
WO2005074001A2 (fr
Inventor
Yohan Desieres
Pierre Nicolas
Charlotte Gillot
Serge Gidon
Jean-Luc Martin
Original Assignee
Commissariat Energie Atomique
Yohan Desieres
Pierre Nicolas
Charlotte Gillot
Serge Gidon
Jean-Luc Martin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0351229A external-priority patent/FR2860339A1/fr
Priority claimed from FR0351228A external-priority patent/FR2864695B1/fr
Application filed by Commissariat Energie Atomique, Yohan Desieres, Pierre Nicolas, Charlotte Gillot, Serge Gidon, Jean-Luc Martin filed Critical Commissariat Energie Atomique
Priority to JP2006546266A priority Critical patent/JP2007518223A/ja
Priority to US10/585,073 priority patent/US7838839B2/en
Priority to EP04816492A priority patent/EP1702345A2/fr
Publication of WO2005074001A2 publication Critical patent/WO2005074001A2/fr
Publication of WO2005074001A3 publication Critical patent/WO2005074001A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/243—Beam current control or regulation circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/18—Assembling together the component parts of electrode systems
    • H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

L'invention concerne un dispositif d'émission électronique (50) ô plusieurs faisceaux d'électrons (59) comprenant une première structure (6) comportant une pluralité de sources (61) d'émission de faisceau d'électrons (69), hybridée (9) avec une deuxième structure (7) comportant une pluralité d'ouvertures (8) de diaphragme.
PCT/FR2004/003407 2003-12-30 2004-12-29 Dispositif d'emission electronique multifaisceaux hybride a divergence controlee WO2005074001A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006546266A JP2007518223A (ja) 2003-12-30 2004-12-29 発散制御機能を有したハイブリッド型マルチビーム電子放出デバイス
US10/585,073 US7838839B2 (en) 2003-12-30 2004-12-29 Hybrid multibeam electronic emission device with controlled divergence
EP04816492A EP1702345A2 (fr) 2003-12-30 2004-12-29 Dispositif d'emission electronique multifaisceaux hybride a divergence controlee

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR0351229A FR2860339A1 (fr) 2003-12-30 2003-12-30 Dispositif de mesure de l'intensite des faisceaux d'electrons emis par une matrice de sources individuelles.
FR0351228A FR2864695B1 (fr) 2003-12-30 2003-12-30 Dispositif d'emission electronique multifaisceaux hybride a divergence controlee.
FR0351228 2003-12-30
FR0351229 2003-12-30

Publications (2)

Publication Number Publication Date
WO2005074001A2 WO2005074001A2 (fr) 2005-08-11
WO2005074001A3 true WO2005074001A3 (fr) 2006-07-20

Family

ID=34828643

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/003407 WO2005074001A2 (fr) 2003-12-30 2004-12-29 Dispositif d'emission electronique multifaisceaux hybride a divergence controlee

Country Status (4)

Country Link
US (1) US7838839B2 (fr)
EP (1) EP1702345A2 (fr)
JP (1) JP2007518223A (fr)
WO (1) WO2005074001A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421305B2 (en) * 2007-04-17 2013-04-16 The University Of Utah Research Foundation MEMS devices and systems actuated by an energy field
US9093243B2 (en) * 2013-05-23 2015-07-28 National University Of Singapore Gun configured to generate charged particles
US20160247657A1 (en) * 2015-02-25 2016-08-25 Ho Seob Kim Micro-electron column having nano structure tip with easily aligning
EP3319112A1 (fr) * 2016-11-07 2018-05-09 Meyer Burger (Germany) AG Dispositif d'extraction de porteurs de charge électriques à partir d'un espace de production de porteurs de charge électriques
JP6578529B1 (ja) * 2019-06-10 2019-09-25 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子銃、電子線適用装置、および、電子銃の制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1380126A (en) * 1972-04-25 1975-01-08 Smith K C A Electron guns
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
EP0780879A2 (fr) * 1995-12-21 1997-06-25 Nec Corporation Appareil d'exposition par faisceau d'électrons
EP1249855A1 (fr) * 2001-04-09 2002-10-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif et procédé pour contrôler des faisceaux électroniques focalisés

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JPS58500307A (ja) * 1981-03-10 1983-02-24 ベ−コ　インスツルメンツ　インコ−ポレイテツド スクリ−ンレンズアレ−システム
JPS5916255A (ja) * 1982-07-19 1984-01-27 Nippon Telegr & Teleph Corp <Ntt> 電子銃
JPS6381743A (ja) * 1986-09-26 1988-04-12 Jeol Ltd 電界放射型電子銃
US4874981A (en) 1988-05-10 1989-10-17 Sri International Automatically focusing field emission electrode
JPH0636484B2 (ja) * 1988-09-08 1994-05-11 日本電気株式会社 電流電圧変換回路
JPH03289033A (ja) * 1990-04-06 1991-12-19 Jeol Ltd 電界放射形電子銃
DE69204629T2 (de) * 1991-11-29 1996-04-18 Motorola Inc Herstellungsverfahren einer Feldemissionsvorrichtung mit integraler elektrostatischer Linsenanordnung.
JPH0786693A (ja) * 1993-09-16 1995-03-31 Toshiba Corp 光半導体モジュール
JPH06177020A (ja) * 1992-12-09 1994-06-24 Hitachi Ltd 薄膜冷陰極及びそれを用いた電子線露光装置
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
US5486697A (en) * 1994-11-14 1996-01-23 California Institute Of Technology Array of micro-machined mass energy micro-filters for charged particles
JP3647136B2 (ja) * 1996-04-23 2005-05-11 キヤノン株式会社 電子ビーム露光装置
JPH1172529A (ja) * 1997-08-28 1999-03-16 Murata Mfg Co Ltd コンデンサの絶縁抵抗測定装置
US5981962A (en) * 1998-01-09 1999-11-09 International Business Machines Corporation Distributed direct write lithography system using multiple variable shaped electron beams
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
JP3014380B2 (ja) * 1998-01-09 2000-02-28 インターナショナル・ビジネス・マシーンズ・コーポレイション 複数の可変成形電子ビ―ムを使用してパタ―ンを直接書き込むシステムおよび方法
US5962859A (en) * 1998-01-09 1999-10-05 International Business Machines Corporation Multiple variable shaped electron beam system with lithographic structure
JPH11290308A (ja) * 1998-04-06 1999-10-26 Ge Yokogawa Medical Systems Ltd 放射線検出素子配列方法、放射線検出器および放射線断層撮影装置
US6989546B2 (en) * 1998-08-19 2006-01-24 Ims-Innenmikrofabrikations Systeme Gmbh Particle multibeam lithography
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP3752949B2 (ja) * 2000-02-28 2006-03-08 日立化成工業株式会社 配線基板及び半導体装置
JP4947842B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
US6512235B1 (en) * 2000-05-01 2003-01-28 El-Mul Technologies Ltd. Nanotube-based electron emission device and systems using the same
US6818911B2 (en) * 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4140816B2 (ja) * 2002-05-24 2008-08-27 富士通株式会社 マイクロミラー素子
US6953938B2 (en) * 2002-10-03 2005-10-11 Canon Kabushiki Kaisha Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1380126A (en) * 1972-04-25 1975-01-08 Smith K C A Electron guns
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
EP0780879A2 (fr) * 1995-12-21 1997-06-25 Nec Corporation Appareil d'exposition par faisceau d'électrons
EP1249855A1 (fr) * 2001-04-09 2002-10-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif et procédé pour contrôler des faisceaux électroniques focalisés

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BAYLOR L R ET AL: "Digital electrostatic electron-beam array lithography", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, MICROELECTRONICS AND NANOMETER STRUCTURES PROCESSING, MEASUREMENT AND PHENOMENA, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 20, no. 6, November 2002 (2002-11-01), pages 2646 - 2650, XP012009601, ISSN: 1071-1023 *

Also Published As

Publication number Publication date
JP2007518223A (ja) 2007-07-05
EP1702345A2 (fr) 2006-09-20
WO2005074001A2 (fr) 2005-08-11
US20070080647A1 (en) 2007-04-12
US7838839B2 (en) 2010-11-23

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