WO2005062394A1 - Bolometre - Google Patents

Bolometre Download PDF

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Publication number
WO2005062394A1
WO2005062394A1 PCT/JP2004/019764 JP2004019764W WO2005062394A1 WO 2005062394 A1 WO2005062394 A1 WO 2005062394A1 JP 2004019764 W JP2004019764 W JP 2004019764W WO 2005062394 A1 WO2005062394 A1 WO 2005062394A1
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WO
WIPO (PCT)
Prior art keywords
porometer
oxide
chalcogenide layer
nitride
resistor
Prior art date
Application number
PCT/JP2004/019764
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English (en)
Japanese (ja)
Inventor
Hideomi Koinuma
Takeshi Obata
Tsutomu Yoshitake
Toyohiro Chikyo
Young Zo Yoo
Original Assignee
Nec Corporation
Tokyo Institute Of Technology
Independent Administrative Institution National Institute For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Nec Corporation, Tokyo Institute Of Technology, Independent Administrative Institution National Institute For Materials Science filed Critical Nec Corporation
Priority to JP2005516540A priority Critical patent/JPWO2005062394A1/ja
Publication of WO2005062394A1 publication Critical patent/WO2005062394A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Definitions

  • the present invention relates to a porometer (infrared ray detection element), and particularly to a porometer type non-cooling infrared sensor.
  • a porometer is a device that detects infrared rays by reading the temperature change of a resistor (usually a metal or semiconductor thin film) due to the incidence of infrared rays as the temperature change of electrical resistance.
  • a porometer type infrared detecting element its temperature resolution (NETD) is inversely proportional to the absolute value of the temperature coefficient (TCR) of the electrical resistance of the resistor. Therefore, a high-sensitivity infrared detecting element with a small NETD can be obtained by using a resistor material having a large absolute value of TCR.
  • examples of such a resistor include vanadium oxide (TCR is about 12% / K) as disclosed in JP-A-2001-303236 and JP-A-2000-143243. Material in which part of vanadium oxide is replaced by an element such as manganese (about 1% is about -4% 1), and a belovskite-type manganese oxide material as disclosed in JP-A-2001-303236. (TCR is about 3% ⁇ ).
  • the metal-insulator transition of n-oxide can be used as a resistor for a bore meter.
  • the held-perovskite-type Mn oxide exhibits a so-called metal-insulator transition from a high-temperature, purely semiconducting state to a low-temperature, metallic state with a change in magnetic properties.
  • the temperature of this phase transition can be set to around room temperature by adjusting the amount of hold pump / the ion radius of the A-site ion and the like.
  • the electrical resistance changes so much around this phase transition temperature that a hole-doped perovskite Mn oxide resistor should have a large positive TCR at room temperature.
  • Japanese Patent Application Laid-Open No. H11-1833259 and Japanese Patent Application Laid-Open No. 2000-95052 disclose a belovskite-type Mn oxide formed on an oxide substrate. Large positive TCRs of about 5% ZK at room temperature have been reported for resistors. However, in these inventions, the belovskite type Mn oxide resistor and the readout integrated circuit (ROIC) for electric resistance are not integrated, and no solution is provided for high integration and miniaturization. Not been.
  • the conventional porometer resistor material almost always has a small absolute value of TCR and a negative sign. If the absolute value of TCR is small, the device cannot obtain sufficient sensitivity. Also, a negative TCR sign leads to thermal runaway of the device. Therefore, it is not preferable to use such a resistor material for a porometer type infrared detecting element.
  • the belovskite-type Mn oxide shows a positive TCR with a large absolute value when its phase transition is used, so it is higher than before by using it as a resistor for porometer. It enables the realization of an infrared detector that is both sensitive and thermally safe.
  • the technology required for high integration and miniaturization of the element, that is, the resistor and the ROIC are made of silicon
  • the present invention has been made in view of the above-mentioned problems of the prior art, and aims at providing a highly sensitive, multi-pixel, highly integrated, compact, and thermally safe porometer. Is to do.
  • the present invention is a porometer characterized in that a resistor having a positive temperature coefficient (TCR) and a readout integrated circuit (ROIC) are formed on the same substrate.
  • a laminated structure composed of a semiconductor material and a chalcogenide layer coated on the semiconductor material, or a semiconductor material and a chalcogenide layer coated on the semiconductor material and the chalcogenide layer 2.
  • the porometer according to the second feature wherein silicon is used as a semiconductor material. It is desirable to use (100) plane, (100) slightly inclined plane, (110) plane or (111) plane as silicon.
  • the porometer is characterized by using an oxide, sulfide, or oxysulfide material as the chalcogenide layer.
  • the chalcogenide layer it is preferable to use a material having a spinel structure or a zinc-blende structure (zincblend structure) or a wurtzite structure (wurtz is an e structure).
  • a material having a spinel structure is used for the chalcogenide layer
  • a material containing at least one element of Mg, Zn, A, Ga, ln, Ti, and V is preferable to use.
  • a material having a zinc blende type structure or a wurtzite type structure is used for the chalcogenide layer
  • an amorphous material may be used for the chalcogenide layer.
  • a material containing at least one element of alkaline earth metals, rare earths, Zn, Gd, A and Ga, ln, TuV, Ni, and Cu is desirable to use.
  • a porometer using an oxide material as the buffer layer wherein any one of the following oxides is used: ⁇ a lobskite structure, a layered perovskite structure, a fluorite structure, a C-rare earth structure, or a pi-channel structure. It is a porometer characterized by the following. A material having a perovskite structure or a layered perovskite structure is used as an oxide material.
  • the site A contains at least one element selected from alkaline earth metals, Pb, rare earths, and Bi
  • the site B contains A, Ga, Ti, Zr, Hf, and Nb
  • an oxide containing at least one element of Ta and Ta it is desirable to use an oxide containing at least one of Ge, Zr, and Hf.
  • an oxygen-deficient fluorite oxide in which a part of the metal is replaced with at least one element selected from alkaline earth metals and rare earths is used. Is also good.
  • a C-rare earth structure material When a C-rare earth structure material is used as the oxide material, it is desirable to use an oxide containing at least one kind of rare earth element.
  • a pipe-cloth material As the oxide material, at least one element selected from the group consisting of alkaline earth metals and rare earth elements, and Ti, Zr, Hf, Nb, Ta, Ru It is desirable to use an oxide composed of at least one of Sn, Sn and Sb.
  • a porometer using a nitride (or oxynitride) material as the buffer layer wherein the nitride (or oxynitride) has a rock salt structure, a zinc blende structure, or a wurtzite structure.
  • a porometer characterized by using:
  • a rock salt type structural material is used as the nitride (or oxynitride) material, it is desirable to use a nitride (or oxynitride) containing at least one of A, Sr, Zr and Hf.
  • nitride (or oxynitride) material When a zinc-blende-type structural material is used as the nitride (or oxynitride) material, it is preferable to use a nitride (or oxynitride) containing at least one of B, A, Ga, and In .
  • a wurtzite type structural material is used as the nitride (or oxynitride) material, it is preferable to use a nitride (or oxynitride) containing at least one of B, A, Ga, and In .
  • the porometer is characterized by using an oxide material having a perovskite structure as the resistor.
  • oxides having a bevelskite structure at site A, at least one element selected from rare earths (Y, La, Ge, etc.) and Bi, and aluminum oxide or Pb It is desirable to use a Mn oxide material containing at least one element selected from the following.
  • (La y) one Mn03 + (5 (A is at least one element selected from alkaline earth metals or Pb; 0 ⁇ y ⁇ 0.5, A good device can be obtained by using an oxide having the composition represented by 0 ⁇ x ⁇ 0.5.Also, as an oxide having a perovskite structure, A 2 MB06 + s (A is an alkaline earth metal) M is at least one element selected from Gr and Fe, and B is at least one element selected from Mo, W and Re) An oxide having a composition as described below may be used.
  • the resistor and the ROIC are incorporated on the same substrate, high integration and miniaturization are possible.
  • negative feedback is applied to the resistor with respect to temperature rise, so that the porometer does not run away from the heat and the element safety is secured.
  • the material described in the seventh aspect of the present invention such as a perovskite-type Win oxide, can be used as the resistor.
  • the electrical resistance characteristics change with the change in magnetic properties, and a metal-insulator transition from a low-temperature metal phase to a high-temperature semiconductor-insulator phase is exhibited.
  • these materials exhibit a very large absolute value of positive TCR near the temperature at which the phase transition occurs.
  • this TCR is very sensitive to the composition and crystallinity of the material, and is reduced by a slight composition shift or polycrystallization. This is because impurities in the grain boundaries generated by the composition shift and the shift in the adjacent grain orientation caused by polycrystallization disturb the spin of the conduction electrons flowing through these materials, and the magnetic properties described above. This is because it hinders changes.
  • the selection of the underlayer is particularly important.
  • the TCR characteristic of the resistor is significantly deteriorated because the resistor material and the semiconductor material easily react with each other.
  • the chalcogenide layer of the fourth aspect of the present invention has low reactivity with semiconductor materials such as silicon, if such a chalcogenide layer is selected, the chalcogenide semiconductor material becomes chalcogenide. This is because it is blocked by the genide layer and the reaction between the resistor and the semiconductor material is prevented.
  • the TCR characteristic of the resistor is further improved.
  • the oxide (or nitride, oxynitride) material of the fifth (or sixth) invention has a good lattice matching with the resistor material of the seventh invention. This is because if a material is selected, the resistor will be oriented or epitaxially grown.
  • FIG. 1 is a sectional view of a single pixel porometer element according to the present invention.
  • FIG. 2 is a sketch drawing of a single-pixel porometer element manufactured by changing the shape of a resistor using the present invention.
  • FIG. 3 is a cross-sectional view of a single-pixel porometer element according to another embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a single-pixel porometer element having a bridge structure according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a single-pixel bolometer element manufactured with a bridge structure according to the fifth embodiment.
  • FIG. 6 is a cross-sectional view of a single-pixel porometer element manufactured with a bridge structure according to the sixth embodiment.
  • a multilayer structure is prepared by growing a chalcogenide layer 3 coating on a semiconductor material 2 on which a readout integrated circuit (ROIC) 1 has been built.
  • a resistor 4 is grown on the chalcogenide layer 3.
  • a wiring 5 for reading out the electrical resistance is formed, and the ROIC 1 and the resistor 4 are connected to complete the element.
  • the ROIC 1 may be initially formed in the semiconductor material in advance, or may be formed in the middle or at the end of the process.
  • a wafer of a group IV element such as Su Ge, a compound of group IV such as SiG, SiGe, a group II-IV compound such as GaN or GaAs, or a group 11-VI compound such as ZnO is used. be able to.
  • a semiconductor film in which a semiconductor film is laminated on a dissimilar material is also applicable as a semiconductor material.
  • Si is most desirable from the viewpoint of productivity and the like, and the (100), (110), and (111) planes are desirable in the plane orientation.
  • a so-called slightly inclined surface inclined from 0 to 15 degrees from (100) may be used as Si.
  • a double-step structure of silicon atoms is formed on the surface by appropriate treatment. It is more desirable.
  • an antiphase boundary (APDB) may be formed in the chalcogenide layer formed thereon.
  • oxide, sulfide, and oxysulfide materials can be used.
  • oxide, sulfide, and oxysulfide materials can be used.
  • semiconductor materials such as silicon, a spinel structure, a zinc blende structure (zi neb lend structure) or a wurtzite structure (wurtzite structure) It is desirable to use a material selected from the following.
  • the element constituting the chalcogenide layer 3 must be at least one of Mg, Zn, A, Ga, ln, and Tu V when a spinel structure material is used. It is desirable to include When using materials with sphalerite-type structure or wurtzite-type structure, a few of Be, Mg, Cd, Ni, Gu, and Zn are used. It is desirable to include at least one element. As the condition is satisfied materials such MgA I 2 0 4, ZnS, ZnO or the like can be mentioned.
  • the method of forming the chalcogenide material 3 is not particularly limited, but a vapor deposition method, a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, a sol-gel method, or the like may be used.
  • An annealing treatment may be performed to improve the crystallinity.
  • an annealing method such as rapid thermal annealing (RTA) can be used, but any method may be used as long as there is no problem in the process.
  • RTA rapid thermal annealing
  • the thickness of the chalcogenide layer 3 is not particularly limited, but typically, a range of 10 to 200 nm will be practical from the viewpoint of manufacturing time and cost.
  • the A site includes at least one element selected from rare earths (Y, La, Ge, etc.) and ⁇ , and at least one element selected from aluminum earth or Pb.
  • a perovskite-type Mn oxide material containing one kind of element can be used.
  • a perovskite-type Mn oxide material (La -yYy), as such a perovskite-type Mn oxide material, (La -yYy),.
  • A is at least one kind of element selected from alkaline earth metal or Pb (0 ⁇ Good results can be obtained by using an oxide having a composition represented by y ⁇ 0.5, 0 ⁇ x ⁇ 0.5)
  • a 2 MB0 6 + s A is at least one element selected from alkaline earth metals; M is at least one element selected from Gr and Fe; B is at least one element selected from Mo, W and Re It is also possible to use a perovskite oxide having a composition represented by one kind of element)
  • the method for forming the resistor 4 can be the same as that for the chalcogenide material 3.
  • the thickness of the resistor 4 The resistance is not particularly limited, but may be set so that the resistance is larger than the resistance of ROIC 1.
  • the shape in order to adjust the resistance value of the resistor, the shape may be changed instead of the film thickness.
  • FIG. 2 shows an example thereof.
  • the method of processing the resistor 11 may be, for example, ion milling, but is not particularly limited to this method.
  • the shape of the resistor 11 is not limited to the shape shown in FIG. 2, but may be any shape according to the device shape.
  • the wiring 5 in FIG. 1 there is no particular problem if a material exhibiting metallic electrical resistance is selected.
  • metals such as A and Gu, alloys such as AuGe, and transparent conductive oxides (T CO) can be used.
  • T CO transparent conductive oxides
  • the wiring 5 for example, a laminated film made of a plurality of metals, alloys, TCO, or the like, such as PdZAu, may be used.
  • the method for forming the wiring 5 can be the same as the method for forming the rugogenide material 3.
  • an amorphous material can be used as the chalcogenide layer 3 by selecting a material and a manufacturing method of the resistor 4.
  • the chalcogenide layer 3 may be amorphous.
  • the amorphous material should be at least one of alkaline earth metals, rare earths, Zn, Gd, Al, Ga, ln, Ti, V, and Nu Gu to suppress the reaction with semiconductor material 2. It is desirable to include an element.
  • An example of a material satisfying the above conditions is aluminum oxide. Also in the above case, there is no particular limitation on the method of forming the chalcogenide material 3 and the film thickness.
  • a coating of a chalcogenide layer 23 was grown on the semiconductor material 22 on which the ROIC 21 was formed, and a coating of an oxide layer 24 was further grown on the chalcogenide layer 23 as a buffer layer.
  • a laminated structure is prepared.
  • a resistor 25 is grown on the laminated structure.
  • a wiring 26 for reading out the electric resistance is formed, and R O I C 21 is connected to the resistor 25 to complete the element.
  • the oxide layer 24 may include a bevelskite structure, a layered perovskite structure, a fluorite structure, and a C-rare earth in order to grow with good crystallinity in consideration of lattice matching with the chalcogenide layer 22 and the resistor 25. It is desirable to use an oxide having either a structure or a pyrochlore structure.
  • a material having a perovskite structure or a layered perovskite structure is used as the oxide layer 24 in order to suppress the reaction with the chalcogenide layer 22 and the resistor 25, the alkaline earth metal is used for the A site. , Pb, rare earth, Bi, and a material containing at least one element selected from the group consisting of A, Ga, Tu Zr, Hf, Nb, and Ta at the B site And good.
  • a material for example, LaA I 0 3, NdGa0 3 , SrT i 0 3, BaZr0 3, BaHf0 3, B iji 2 0 7, such as SrB i 2 Ta 2 0 9 and the like.
  • a fluorite structure material it is preferable to use an oxide containing at least one element of Ge, Zr, and Hf.
  • an oxygen-deficient fluorite-type oxide in which a part of the metal is replaced with at least one element selected from an alkaline earth metal and a rare earth element is used. May be used.
  • Materials satisfying such conditions include, for example, GeO 2 , La-doped GeO 2 , ⁇ or C a -doped ZrO 2 .
  • a C-rare earth structure material is used for the oxide layer 24
  • Dy 2 0 3, such as Er 2 0 3 applies to this condition.
  • a pyrochlore structure material is used as the oxide layer 24, at least one element selected from the group consisting of alkaline earth metals and rare earth elements, and Ti, Zr, Hf, Nb
  • an oxide composed of at least one of Ta, Ru, Sn, and Sb is desirable to use an oxide composed of at least one of Ta, Ru, Sn, and Sb.
  • a material such as La 2 Zr 2 0 7, Ca 2 Ta 2 0 7 and the like.
  • a nitride (or oxynitride) layer can be used instead of the oxide layer 24 as one buffer layer.
  • the nitride (or oxynitride) layer may be a rock salt type structure, a zinc blende type structure or a nitride type layer in order to grow with good crystallinity in consideration of lattice matching with the chalcogenide layer 23 and the resistor 25. It is desirable to use any nitride (or oxynitride) with a wurtzite structure.
  • nitride (or oxynitride) layer As follows. First, when using a rock salt type structural material, a nitride (or oxynitride) containing at least one element of Si, Tu Zr and Hf is used. Second, when using zinc-blende-type structural materials, nitrides (or oxynitrides) containing at least one of the elements B, Al, Ga, and In are used. Third, when a wurtzite-type structural material is used, a nitride (or oxynitride) containing at least one of B, Al, Ga, and In is used.
  • the method for forming the oxide, nitride, and oxynitride layers described above is not particularly limited.
  • a vapor deposition method, a sputtering method, a pulse laser deposition (PLD) method, a chemical vapor deposition (CVD) method, a sol-gel method, or the like may be used.
  • PLD pulse laser deposition
  • CVD chemical vapor deposition
  • sol-gel method or the like
  • An annealing process may be performed in order to improve the performance.
  • an annealing method such as rapid thermal annealing (RTA) can be used, but any method may be used if there is no problem in the process.
  • the thickness is not particularly limited, but is typically practical in the range of 10 to 200 nm in view of manufacturing time and cost.
  • the infrared ray 6 incident from the outside is absorbed by the resistor 4 and the temperature of the resistor 4 changes.
  • the temperature of the resistor 4 is read out as an electric resistance value via the wiring 5 by R O I C 1.
  • the temperature of the resistor 4 rises (falls) due to the increase (decrease) of the incident energy of the infrared ray 6, and the electric resistance value of the resistor 4 increases (decreases) accordingly.
  • the ROIC 1 reads the magnitude of the electric resistance and performs appropriate data processing.
  • an infrared antireflection film 38 (for example, silicon nitride) is formed on the surface of the resistor 34.
  • the infrared reflective film 37 (For example, metals such as AU and WSi, TCO, etc.).
  • the resistor 34 is spatially separated from the laminated structure, a so-called bridge structure.
  • a single pixel bolometer as shown in FIGS. By arranging a large number of data on a substrate, an imaging device such as an infrared ray camera is manufactured.
  • a vicinal silicon (100) substrate incorporating an RO IC was prepared. However, the inclination angle of the surface was 5 degrees, and the surface was treated so that a double-step structure of silicon atoms appeared.
  • the silicon substrate is introduced into the PLD apparatus was evacuated within the apparatus to below 1 x10- 7 Torr, and the silicon substrate surface as a chalcogenide layer of ZnS film of zinc blende type structure is 50nm growth.
  • a KrF excimer laser was used as the laser light source, and a sintered body of the same composition was used as the target.
  • the substrate temperature was between 500 and 700 ° 0, and sulfur vapor was introduced into the apparatus by ImTorr.
  • the ZnS film grown in this way was a cube-on-cube epitaxial film without APDB. Thereafter, the inside of the apparatus was evacuated again to 1 x10- 7 Torr or less, allowed to 100nm Epitakisharu grow LaO.67 (CaO.33 SrO.67) 0, 33 Mn0 3 film as a resistor on the ZnS film in situ Was.
  • a sintered body of the same composition was used as the target, the substrate temperature was 600 to 700 ° C, and the oxygen partial pressure was 0.1 to 10 mTorr. Thereafter, the silicon substrate was taken out, by ion milling LaO.67 (CaO.33 SrO.67) 0 ⁇ 33 ⁇ 0 3 film was processed into a shape as shown in FIG.
  • the silicon substrate was deposited Al having a thickness of 300nm to RF sputtering apparatus and transferred by LaO.67 (CaO.33 SrO.67) 0.33 Mn0 3 film to the end, by reactive ion etching (RIE) LaO.67 ( CaO.33 SrO.67) was processed into wiring connecting the 0.33 Mn0 3 film and RO IC.
  • the single-pixel politemeter fabricated in this way exhibited a TCR of 7% K at room temperature.
  • a silicon (111) substrate with an RO IC was prepared.
  • the silicon substrate from which the oxide film on the surface was removed was introduced into the CVD apparatus.
  • the MgAI 2 0 4 layer having a spinel structure as a chalcogenide layer on the surface of the silicon substrate is 50nm Epitakisharu growth.
  • the chloride gas of the Mg and AI as a source gas, using the G0 2 and H 2 as a carrier gas.
  • the substrate temperature is 6 It was between 00 and 800 ° C.
  • LaO.67 (CaO.33 SrO.67) as a resistor in MgAI 2 0 4 film 0.33 Mn0 3 film was formed and processed in the same manner as in Example 1.
  • the silicon substrate was deposited AI in thickness 300nm in RF sputtering apparatus and transferred by LaO.67 (CaO.33 SrO.67) 0.33 Mn0 3 film by reactive ion etching (RIE) LaO.67 (CaO.33 SrO.67) was processed into wiring connecting the 0.33 Mn0 3 film and RO IC.
  • RIE reactive ion etching
  • a silicon (100) substrate with an RO IC was prepared.
  • the silicon substrate from which the oxide film on the surface was removed was introduced into a helicon sputtering apparatus. After evacuating the apparatus to below 1 x10- 9 Torr, and the oxide Aluminum film of amorphous to 30nm deposited on the silicon substrate surface. At this time, a sintered body of alumina was used as a target. Also, the substrate temperature was between room temperature ⁇ 400 ° C, was introduced so that the oxygen gas into the apparatus 1 x10 one 3 ⁇ 1 X 10- 5 Torr. Thereafter, the silicon substrate is transferred to a PLD device, and the inside of the device is evacuated to a temperature of less than 1 ⁇ 10 9 ⁇ .
  • a (100) -oriented SrTiO 3 layer having a perovskite structure is used as an oxide material for a buffer layer.
  • a (STO) film was deposited to a thickness of 50 nm.
  • the target a sintered body having the same composition
  • the substrate temperature is 500 to 700 ° ⁇ , oxygen partial pressure of 1 x10- 6 ⁇ 1 x10- 5 Torr.
  • the S TO as a resistor on the membrane
  • the substrate temperature was 600 to 700 ° C
  • the oxygen partial pressure was 0.1 to 10 mTorr.
  • the silicon substrate was taken out and processed (LaO.95Y0.05) 0.7 (CaO.50Sr0.50) 0.3Mn0 3 membrane shaped like a by Li Figure 2 the ion milling.
  • a SOI substrate with an RO IC was prepared. However, the plane orientation of silicon was (100).
  • the SOI substrate from which the silicon oxide film on the surface was removed was introduced into a PLD device.
  • a PLD device After evacuating the apparatus to below 1 x10- 7 Torr, was as chalcogenide layer on a silicon substrate table surface (Zn0.9lfe0.1) S film was 30nm Epitakisharu growth.
  • a KrF excimer laser was used as a laser light source, and a sintered body of the same composition was used as a target.
  • the substrate temperature was between 500 and 700 ° C, and no sulfuric acid vapor was introduced into the equipment.
  • the inside of the apparatus was evacuated again to 1 x10- 7 Torr or less, and the ST Omicron film is 50nm deposited in the same manner as in (Zn0.9Mg0.1) Example 3 on S film in situ.
  • the inside of the apparatus was evacuated again to 1 x10- 7 Torr or less, S TO on the film as a resistor antibody (LaO.95Y0.05) 0.67 (CaO.33 SrO.66) in situ 0.33 Mn0 3 film 150nm Deposited.
  • the target is a sintered body of the same composition, the substrate temperature is 600-700 ° C, and the oxygen partial pressure is 0. ⁇ 10 mTorr.
  • removed SO I substrate was processed into a shape as shown in FIG. 2 by ion milling (LaO.95Y0.05) 0.67 (CaO.33 SrO.66) 0.33 Mn0 3 film.
  • the SO I substrate to form an RF sputtering apparatus and transferred (LaO.95Y0.05) 0.67 (CaO.33 SrO.66) 0.33Mn0 3 having a thickness of 300nm on the film Al / Pd multilayer film, the reactive the Ion'etsu quenching (RIE) (LaO.95Y0.05) 0.67 ( CaO.33Sr0.66) 0.33Mn0 3 film and RO
  • the single-pixel porome produced in this manner exhibited a TCR of 9% at room temperature.
  • a SOI substrate with an RO IC was prepared. However, the plane orientation of silicon was (100).
  • the SOI substrate from which the silicon oxide film was removed was introduced into the PLD device.
  • the Z n S film zincblende structure is 2000nm deposited in the same manner as in Example 1 as a chalcogenide layer on the silicon substrate surface.
  • the inside of the apparatus was evacuated again to 1 x 10- 7 Torr or less, the S TO membrane towards the same manner as in Example 3 in place on Z n S film as a buffer layer of oxide material Deposited 100 nm by the method.
  • an ArF excimer laser beam was irradiated at 10 mJ / Gni 2 , 50 Hz for 30 seconds, and 50 mJ / cm 2 , 10 Hz for 5 minutes at room temperature in the atmosphere. Thereafter, remove the SOI substrate, (LaO. 95Y0. 05) 0. 67 (CaO. 1 Sr0. 2) to 0. 33Mn0 3 Z ST0 laminated film was processed by ion milling, to remove the ZnS only by dilute hydrofluoric acid . In this way, as shown in FIG. 5, the cavity between the (LaO. 95Y0. 05) 0. 67 (CaO. 1 Sr0. 2) 0.
  • ZnS which is a chalcogenide layer, becomes a so-called sacrificial layer 43 and does not finally exist in the device, but is required in the course of device fabrication.
  • a silicon (100) substrate 42 incorporating the ROIC 41 was prepared.
  • the silicon substrate 42 from which the silicon oxide film on the surface was removed was introduced into the PLD device.
  • the zinc oxysulfide sphalerite structure as the chalcogenide layer on the silicon substrate surface (Z0S) film is 2000nm deposited.
  • a KrF excimer laser was used as a laser light source, and a sintered body of ZnS was used as a target.
  • the substrate temperature is set to between 5 0 0 ⁇ 7 0 0 ° C, was introduced 1 x 10- 7 ⁇ 1 x 10_ 5 Torr of oxygen gas into the apparatus.
  • This ZOS film becomes a sacrificial layer 43 for forming a bridge structure.
  • evacuate the system again to 1 x lO- 9 Torr or less, ZOS in situ
  • an ITO film 44 of C-rare-earth structure was deposited as an oxide material at 1000 nm
  • a GeO.5LaO.502-y (CL0) film 45 of a deficient fluorite structure was deposited at 100 nm.
  • the substrate temperature is 200 to 400 ° C
  • the oxygen partial pressure was 1 x10- 6 ⁇ 1 x10- 4 Torr.
  • the ITO film 44 serves as both a buffer layer and an infrared reflection film.
  • the # 1_0 film 45 plays a role of electrical insulation between the ITO and the resistor as well as one buffer layer.
  • the ROIC and the resistor having a very large absolute value and a positive TCR are incorporated on the same substrate, high integration and miniaturization are possible.
  • the reason why such a monolithic element can be formed is that the semiconductor material in which the ROIC is incorporated does not react with the resistor, and a material having high lattice matching with the semiconductor material and the resistor is used as the laminated structure. I did it.
  • the present invention is suitable for providing a porometer-type uncooled infrared detection element that is more sensitive, has more pixels, has higher integration, is smaller, and is thermally safer than before.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thermistors And Varistors (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Un bolomètre est constitué d'une résistance ayant un coefficient de modification de température positif de résistivité et un circuit intégré de lecture (ROIC) intégrés sur le même substrat. La structure de ROIC et de la résistance présentent une valeur absolue positive très grande de TCR se trouvant sur le même substrat ce qui permet un fort degré d'intégration et d'obtenir un bolomètre de petite taille.
PCT/JP2004/019764 2003-12-24 2004-12-24 Bolometre WO2005062394A1 (fr)

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JP2011054974A (ja) * 2009-09-02 2011-03-17 Korea Electronics Telecommun ボロメータ用抵抗材料、それを用いた赤外線検出器用ボロメータ、及びその製造方法
US8679650B2 (en) 2008-10-09 2014-03-25 Canon Kabushiki Kaisha Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
JP2014239212A (ja) * 2013-05-07 2014-12-18 独立行政法人産業技術総合研究所 抵抗体材料、抵抗体膜及びその製造方法
JP2015520719A (ja) * 2012-04-16 2015-07-23 ショット コーポレーションＳｃｈｏｔｔ Ｃｏｒｐｏｒａｔｉｏｎ 多結晶カルコゲナイドセラミック材料
JP2015143684A (ja) * 2014-01-08 2015-08-06 コミッサリア タ レネルジー アトミク エ オ エネルジー オルタネイティヴ ボロメーター検出のための感受性材料
JP2018067590A (ja) * 2016-10-18 2018-04-26 国立研究開発法人物質・材料研究機構 銅ガリウムテルル系ｐ型熱電半導体、及びそれを用いた熱電発電素子

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679650B2 (en) 2008-10-09 2014-03-25 Canon Kabushiki Kaisha Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
JP2011054974A (ja) * 2009-09-02 2011-03-17 Korea Electronics Telecommun ボロメータ用抵抗材料、それを用いた赤外線検出器用ボロメータ、及びその製造方法
JP2015520719A (ja) * 2012-04-16 2015-07-23 ショット コーポレーションＳｃｈｏｔｔ Ｃｏｒｐｏｒａｔｉｏｎ 多結晶カルコゲナイドセラミック材料
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JP2014239212A (ja) * 2013-05-07 2014-12-18 独立行政法人産業技術総合研究所 抵抗体材料、抵抗体膜及びその製造方法
JP2015143684A (ja) * 2014-01-08 2015-08-06 コミッサリア タ レネルジー アトミク エ オ エネルジー オルタネイティヴ ボロメーター検出のための感受性材料
JP2018067590A (ja) * 2016-10-18 2018-04-26 国立研究開発法人物質・材料研究機構 銅ガリウムテルル系ｐ型熱電半導体、及びそれを用いた熱電発電素子

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