WO2005054331A1 - Composition de resine epoxyde et dispositif a semi-conducteur faisant appel a ladite composition - Google Patents

Composition de resine epoxyde et dispositif a semi-conducteur faisant appel a ladite composition Download PDF

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Publication number
WO2005054331A1
WO2005054331A1 PCT/JP2003/015356 JP0315356W WO2005054331A1 WO 2005054331 A1 WO2005054331 A1 WO 2005054331A1 JP 0315356 W JP0315356 W JP 0315356W WO 2005054331 A1 WO2005054331 A1 WO 2005054331A1
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WO
WIPO (PCT)
Prior art keywords
epoxy resin
resin composition
mass
sealing
inorganic filler
Prior art date
Application number
PCT/JP2003/015356
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English (en)
Japanese (ja)
Inventor
Youichi Hashimoto
Takayuki Tsuji
Masashi Nakamura
Original Assignee
Matsushita Electric Works, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works, Ltd. filed Critical Matsushita Electric Works, Ltd.
Priority to JP2005511258A priority Critical patent/JPWO2005054331A1/ja
Priority to AU2003304587A priority patent/AU2003304587A1/en
Priority to PCT/JP2003/015356 priority patent/WO2005054331A1/fr
Publication of WO2005054331A1 publication Critical patent/WO2005054331A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins

Definitions

  • Patent application title Epoxy resin composition and semiconductor device sealed with the same
  • the present invention relates to a sealing epoxy resin composition used for sealing a semiconductor element, and further relates to a semiconductor device sealed using the same.
  • a resin sealing method using epoxy resin or the like has been used as a method for sealing a diode, a transistor, electricity such as an integrated circuit, an electronic component, or a semiconductor device.
  • an epoxy resin, a resin containing phenol resin as a curing agent as a main component, and crystalline silica, fused silica, etc. to cope with heat released from the element to be sealed.
  • a resin composition sealing material formed by packing the inorganic filler of the present invention at a high density is generally used.
  • the silicon wafer on which a circuit has been formed is resin-sealed directly and then diced and diced into pieces to meet the demand for further thin packages accompanying high-speed and high-integration in recent years.
  • One level-Chip scale package hereafter referred to as WL-CSP
  • WL-CSP One level-Chip scale package
  • a fine wiring is applied as a semiconductor element, and a rewiring for drawing out an external connection terminal and an electrode are formed on the surface, and a bump is formed on the electrode, or a lead is connected.
  • the surface of the silicon wafer is sealed with a molding compound for sealing, and if necessary soldered to the bumps or leads, the silicon wafer is cut into individual elements to form a product.
  • This method is a method that can achieve significant production rationalization simultaneously with package miniaturization because many elements are sealed at once in the wafer stage, but in WL-CSP, resin sealing is performed on one side of the wafer.
  • the molded product becomes asymmetrical in the thickness direction, and in addition there is a tendency of increasing the size of the wafer and thinning the package, and problems in terms of warping and filling have become apparent. Therefore, a sealing material for WL-CSP, which has low warpage, good filling property and high reliability, has been desired.
  • the stress of the sealing material which includes 1) lowering the linear expansion coefficient, 2) lowering the elastic modulus, and 3) lowering the cure shrinkage, etc.
  • the present invention has been made in view of the above circumstances, and improves the defects of the conventional epoxy resin composition for sealing, and has the filling property, low warpage, and high reliability for WL-CSP. It aims at providing a sealing material. Summary of the invention
  • the epoxy resin composition for sealing of the present invention is an epoxy resin, [1] epoxy resin, [2] curing agent, [3] inorganic filler, [4] silicone rubber as an essential component. 22.
  • the epoxy resin composition for closure of the present invention it is desirable for gel time of the epoxy resin composition to be 45 to 80 seconds.
  • the above-mentioned curing agent is made of a phenolic resin represented by the following [Chemical formula 1].
  • the epoxy resin composition for sealing of the present invention is obtained by using a compound represented by the following chemical formula 2 as an epoxy resin other than the biphenyl type epoxy resin of the above-mentioned epoxy resin. Is desirable.
  • the semiconductor device of the present invention is desirable for the semiconductor device of the present invention to be formed using the above-mentioned epoxy resin composition for sealing.
  • the epoxy resin composition for sealing of the present invention contains [1] epoxy resin, [2] curing agent, [3] inorganic filler, and [4] silicone rubber as essential components.
  • the epoxy resin composition for sealing of the present invention is required to contain, as an epoxy resin, particularly 20 to 80% by mass of a biphenyl type epoxy resin represented by the following [Chemical formula 3] in all epoxy resins. . Containing 20 to 80% by mass of the biphenyl type epoxy resin in the total epoxy resin is effective for improving the filling property. When the amount is less than 20% by mass, the effect of improving the filling property can not be obtained. When the amount is more than 80% by mass, the warpage is deteriorated, which is not preferable.
  • the component other than the above-mentioned biphenyl type epoxy resin is an epoxy resin of the above-mentioned [Chemical formula 2].
  • the present invention is not limited to this, and any epoxy resin generally used for sealing the semiconductor device can be used as long as it has two or more epoxy groups in one molecule.
  • any epoxy resin generally used for sealing the semiconductor device can be used as long as it has two or more epoxy groups in one molecule.
  • ortho creso 1 renoporac type epoxy resin, trifenyl methane type epoxy resin, pheno epoxy resins of epoxy type, bisphenol type epoxy resins, dicyclopentadiene type epoxy resins, epoxy resins having a naphthalene ring and the like can be mentioned.
  • a halogen-containing epoxy resin containing halogen such as brom may be used together to impart flame resistance.
  • the curing agent which is one of the essential components of the epoxy resin composition of the present invention, is preferably a phenolic resin represented by the above-mentioned formula.
  • the present invention is not limited to this, and as long as it has two or more phenol hydroxyl groups in one molecule, it can be used under the condition that the warpage does not become a problem.
  • phenol nopolac resin is representative, but other than these, cresol nopolac resin, phenolalalkyl resin, naphthofaralicyl resin, etc., various polyvalent phenol compounds or naphthol compounds can be used. These may be used alone or in combination of two or more.
  • the compounding ratio of the epoxy resin and the curing agent is preferably in the range of 0.9 to 1.5 in terms of the epoxy-phenol equivalent ratio. Outside this range, the unreacted epoxy group or phenolic hydroxyl group remains even after curing, which is not preferable because the reliability of the sealing function is lowered.
  • the blending ratio is such that the epoxy-phenol equivalent ratio is in a preferable range based on the respective epoxy equivalents.
  • an inorganic filler In the epoxy resin composition of the present invention, it is necessary to blend an inorganic filler.
  • the inorganic filler that can be used include, for example, fused silica and crystalline silica generally used for an epoxy resin composition for sealing a semiconductor device.
  • fused silica By containing the inorganic filler, the properties (the coefficient of linear expansion and the coefficient of moisture absorption) of the cured product of the epoxy resin composition for sealing are improved, and the synergetic effect further improves the solder resistance and the reflow resistance.
  • fused silica is particularly preferred because of its low coefficient of thermal expansion.
  • the content of the inorganic filler can be used in the range of 75 to 92% by mass in the total epoxy resin composition.
  • the content of the inorganic filler is less than 75% by mass, the increase in the linear expansion coefficient of the epoxy resin composition described above can not be suppressed, and the reliability of the heat resistance decreases, and the content of the inorganic filler is 9 If it is 2% by mass or more, it is not preferable because the moldability is inferior due to the increase in viscosity.
  • the particle size of the inorganic filler silica is good in the filling property when 99.9% or more is 20 m or less. If the particle size exceeds 20 m, some are likely to be generated, and the packing property is unfavorably deteriorated. Further, the shape of the particles is not particularly limited, but if it is spherical, the increase in viscosity can be suppressed, which is more preferable.
  • the warping property of the wafer after molding becomes good. It is presumed that this is because the visco-elasticity of the silicone rubber dispersed in the epoxy resin composition relieves the residual stress caused by the curing of the epoxy resin. If the compounding amount of the silicone rubber is less than 3% by mass, the above effect can not be obtained, and conversely, if it exceeds 10% by mass, the moldability is lowered, and the strength of the epoxy resin composition as a whole is lowered. Absent.
  • silicone rubber epoxy-modified silicone rubber and dimethyl silicone rubber can be used.
  • the property is preferably solid.
  • the shape is not particularly limited, but is preferably spherical, and the particle diameter is in the range of 2 0 im or less in terms of securing the dispersibility.
  • silane based coupling agents such as hydroxydihydroxytrimethoxysilane and mercaptopropyl trimethoxysilane are highly effective and preferred.
  • a curing accelerator generally used for an epoxy resin composition for sealing a semiconductor device can be used.
  • organophosphorus compounds such as trifenyl phosphine and trimethyl phosphine, 2-methylimidazole, 2-phenylimidazole, 2-phenylimidazole, 1-benzyl-2-phenylimidazole, etc.
  • the imidarids can be mentioned.
  • tertiary amines such as 1,8-diazabis (5,4,0) undecene-7, triethanolamine, benzyldimethylamine and the like. These may be used alone or in combination.
  • the addition amount is preferably 0.5 to 3.5% by mass with respect to the total of the epoxy resin (including a halogen-containing epoxy resin as a flame retardant) and the curing agent. If it is less than 0.5% by mass, the gelation time will be late and the workability will be deteriorated, while if it is more than 3.5% by mass, curing will proceed in the course of mixing and stirring, and the molecular weight distribution will be unstable. It becomes easy to become.
  • a wax can be used as a release agent generally used for an epoxy resin composition for sealing a semiconductor device.
  • the wax for example, carnauba wax, stearic acid, montanic acid, montanic acid ester, phosphoric acid ester, carboxyl group-containing polyolefin and the like can be used.
  • those which can generally be used for the sealing epoxy resin composition can be appropriately blended and used as needed.
  • phosphorus-based flame retardants, flame retardants such as brom compounds and antimony trioxide, and colorants such as carbon black organic dyes can be used.
  • the epoxy resin composition of the present invention is produced by uniformly mixing the above-mentioned components with a mixer or the like and then kneading the mixture with a heating roll, a separator or the like. There is no particular limitation on the order of blending the ingredients. Furthermore, powdering of the melt-kneaded product is carried out after kneading, and powdering or tubing is carried out. It is also possible to make it a bulletin.
  • the epoxy resin composition of the present invention preferably has a gel time in the range of 45 to 80 seconds.
  • the gel time is the time taken for the gelation of the molten epoxy resin composition to be remarkable by a measuring device described later, which is an important characteristic particularly in the workability at the time of molding. That is, if the gel time is shorter than 45 seconds, curing starts before filling is complete and an unfilled portion is generated, and if it is longer than 80 seconds, workability decreases due to a decrease in rigidity upon curing.
  • the gel time is controlled by the addition amount of the curing accelerator to the total amount of resin (epoxy resin + curing agent).
  • the epoxy resin composition of the present invention is used as a sealing agent in an apparatus constituted by a package, such as a semiconductor, an electronic component, etc., in particular.
  • a package such as a semiconductor, an electronic component, etc.
  • the tablet of the composition is loaded into a mold together with the wafer and molded by the compression molding method Then, a molded article was produced.
  • the molding conditions for the evaluation molded article were a temperature of 175 ° C., a pressure time of 180 seconds, and a pressure of 35 MPa.
  • This molded article was after-cured for 1 hour at 175 ° C., allowed to cool to room temperature, fixed on a platen and the surface roughness of the molded article was measured with a surface roughness meter (maximum value-minimum value The value was determined and evaluated as follows. The results are shown in Table 1.
  • a tablet was placed in a mold together with the wafer and molded by compression molding to produce a molded article.
  • the molding conditions of the molded article for evaluation were set to a temperature of 175 ° C., a pressure time of 180 seconds, and a pressure of 35 M Pa.
  • the molded article was subjected to after-heating at 175 ° C. for 6 hours, allowed to cool to room temperature, and measured for the size of voids formed on the surface of the molded article.
  • the size of the void was determined by observing the surface of the molded product with an ultrasonic probe (M 700 II, manufactured by Canon Inc.), measuring the diameter in the chart thus obtained, and evaluating it as follows. .
  • the results are shown in Table 1.
  • the epoxy resin compositions of Examples 1 to 4 all exhibited a gel time within a desirable range, and showed good results in both of the warping property and the filling property.
  • Example 5 where the compounding amount of the biphenyl type epoxy resin is at the lower limit value
  • Example 6 where the compounding amount of the silicone rubber is at the upper limit value
  • the filling property tends to decrease.
  • Example 7 in which the blending amount of silicone rubber was the lower limit value, it was observed that the gel time and the filling property were not a problem but the warping property was deteriorated.
  • all of the examples were in a sufficiently practical range.
  • Comparative Example 1 the particle diameter of the molten silica in Example 1 was changed from 20 m or less to 7 4 / X m or less, and although there was no problem with gel time or warpage, the fillability was inferior, and a molded article A large void was observed on the surface and did not reach a practical level.
  • Comparative Example 2 the blending amount of the silicone rubber of Example 2 was reduced to the lower limit value or less, and the reduced amount was compensated by the increase in the amount of fused silica, and the gel time was not particularly problematic, and the filling property was also the effect of the increased amount of fused silica. Although it showed good results, a large warpage occurred after molding and did not reach a practical level.
  • the epoxy resin of Example 1 was 100% by mass of biphenyl-type epoxy resin, and carnauba wax was added as a mold release agent, and gel time was not a problem in particular, and the filling property was also increased by the fused silica. Good results were obtained without the influence of heat, but a 1 to 2 mm deflection occurred after molding and did not reach a practical level.
  • Comparative Example 4 the epoxy resin of Example 1 was changed to 100% by mass of epoxy resin of Chemical Formula 2 without using biphenyl type epoxy resin, and carnauba wax was added as a mold release agent, and gel time was particularly large. There was no problem, and the warping property also showed good results, but the filling property was poor, voids were observed on the surface of the molded product, and the level did not reach a practical level.
  • the epoxy resin composition for sealing of the present invention is an epoxy resin composition comprising [1] epoxy resin, [2] curing agent, [3] inorganic filler, and [4] silicone rubber as essential components, 20% to 80% by mass of the epoxy resin is a biphenyl type epoxy resin, and 99.9% by mass or more of the inorganic filler has a particle size of 20 xm or less, and the addition amount of the silicone rubber is all It is characterized in that it is 3 to 10% by mass of the epoxy resin composition, whereby it is possible to provide an encapsulant having both the filling property for WL-CSP, low warpage, and high reliability. became. ,
  • the epoxy resin composition for sealing of the present invention is characterized in that the gel time of the epoxy resin composition is 45 to 80 seconds, whereby good filling property at the time of molding can be ensured. It has become possible to provide a highly reliable sealing material with excellent ultrathin formability and extremely low void content.
  • the epoxy resin composition for sealing of the present invention is characterized in that the curing agent is a phenol resin represented by [Chemical Formula 1], whereby a sealing material with low warpage can be provided. It has become possible.
  • the epoxy resin composition for sealing of the present invention is characterized by using a compound represented by the following chemical formula 2 as an epoxy resin other than biphenyl type epoxy resin of epoxy resin, Thus, it has become possible to provide a low warpage sealing material.
  • the semiconductor device of the present invention is characterized by being molded using the above-described epoxy resin composition for sealing, and it has become possible to provide a highly reliable semiconductor device. ⁇ table 1 ⁇

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention se rapporte à une composition de résine époxyde contenant, comme constituants principaux, une résine époxyde, un agent durcisseur, une charge inorganique et un caoutchouc silicone. Ladite composition est caractérisée en ce que : la résine époxyde contient de 20 à 80 % poids d'une résine époxyde de type biphényle ; ladite charge inorganique comporte des particules possédant un diamètre égal ou inférieur à 20 µm en une quantité égale ou supérieure à 99,9 % poids ; ladite composition contient ledit caoutchouc silicone en une quantité de 3 à 10 % poids ; ladite composition présente un temps de gélification de 45 à 80 secondes ; ledit agent durcisseur renferme une résine phénolique possédant une structure spécifique ; et ladite résine époxyde renferme également un composé possédant une structure spécifique, tel qu'une résine époxyde à l'exception d'une résine époxyde de type biphényle telle que susmentionnée. La composition de résine époxyde peut tout à fait servir de matériau d'étanchéité pour l'encapsulation WL-CSP, qui combine facilité de remplissage, faible enroulage et grande fiabilité.
PCT/JP2003/015356 2003-12-01 2003-12-01 Composition de resine epoxyde et dispositif a semi-conducteur faisant appel a ladite composition WO2005054331A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005511258A JPWO2005054331A1 (ja) 2003-12-01 2003-12-01 エポキシ樹脂組成物及びそれを用いて封止した半導体装置
AU2003304587A AU2003304587A1 (en) 2003-12-01 2003-12-01 Epoxy resin composition and semiconductor device using the same
PCT/JP2003/015356 WO2005054331A1 (fr) 2003-12-01 2003-12-01 Composition de resine epoxyde et dispositif a semi-conducteur faisant appel a ladite composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/015356 WO2005054331A1 (fr) 2003-12-01 2003-12-01 Composition de resine epoxyde et dispositif a semi-conducteur faisant appel a ladite composition

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009060146A (ja) * 2008-12-05 2009-03-19 Panasonic Electric Works Co Ltd 半導体封止用エポキシ樹脂無機複合シート及び成形品
JP2013256586A (ja) * 2012-06-12 2013-12-26 Hitachi Chemical Co Ltd 熱硬化性樹脂組成物およびそれを用いた半導体装置
CN108192288A (zh) * 2017-12-29 2018-06-22 定远县丹宝树脂有限公司 一种耐油环氧树脂及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165652A (ja) * 1987-12-21 1989-06-29 Matsushita Electric Works Ltd 半導体封止用エポキシ樹脂成形材
JPH02189357A (ja) * 1989-01-19 1990-07-25 Matsushita Electric Works Ltd 半導体封止用エポキシ樹脂成形材料
JPH1135803A (ja) * 1997-07-23 1999-02-09 Toshiba Chem Corp エポキシ樹脂組成物およびｂｇａ型半導体封止装置
JP2000355620A (ja) * 1999-04-15 2000-12-26 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2003064154A (ja) * 2001-08-30 2003-03-05 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物の製造法及び半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165652A (ja) * 1987-12-21 1989-06-29 Matsushita Electric Works Ltd 半導体封止用エポキシ樹脂成形材
JPH02189357A (ja) * 1989-01-19 1990-07-25 Matsushita Electric Works Ltd 半導体封止用エポキシ樹脂成形材料
JPH1135803A (ja) * 1997-07-23 1999-02-09 Toshiba Chem Corp エポキシ樹脂組成物およびｂｇａ型半導体封止装置
JP2000355620A (ja) * 1999-04-15 2000-12-26 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP2003064154A (ja) * 2001-08-30 2003-03-05 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物の製造法及び半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009060146A (ja) * 2008-12-05 2009-03-19 Panasonic Electric Works Co Ltd 半導体封止用エポキシ樹脂無機複合シート及び成形品
JP2013256586A (ja) * 2012-06-12 2013-12-26 Hitachi Chemical Co Ltd 熱硬化性樹脂組成物およびそれを用いた半導体装置
CN108192288A (zh) * 2017-12-29 2018-06-22 定远县丹宝树脂有限公司 一种耐油环氧树脂及其制备方法

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AU2003304587A1 (en) 2005-06-24
JPWO2005054331A1 (ja) 2007-06-28

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