WO2005039258A1 - ポリイミド樹脂基材及びそのポリイミド樹脂基材を用いた配線板 - Google Patents
ポリイミド樹脂基材及びそのポリイミド樹脂基材を用いた配線板 Download PDFInfo
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- WO2005039258A1 WO2005039258A1 PCT/JP2004/015222 JP2004015222W WO2005039258A1 WO 2005039258 A1 WO2005039258 A1 WO 2005039258A1 JP 2004015222 W JP2004015222 W JP 2004015222W WO 2005039258 A1 WO2005039258 A1 WO 2005039258A1
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- WIPO (PCT)
- Prior art keywords
- polyimide resin
- base material
- resin base
- layer
- silicon
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
Definitions
- the present invention relates to a polyimide resin base material and a wiring board using the polyimide resin base material.
- the present invention relates to a polyimide resin base material suitable for a wiring board using a so-called two-layer flexible metal-clad laminate.
- Polyimide resin is flexible and flexible, and has excellent properties such as mechanical strength, heat resistance, and electrical properties. It has been conventionally used as a three-layer substrate bonded to copper foil using an adhesive. It has been widely used in the manufacture of flexible printed wiring boards and tape-made bonding (TAB) products, which are a type of flexible printed wiring boards.
- TAB tape-made bonding
- a method of manufacturing the two-layer substrate there are a) a casting method in which a polyimide precursor varnish is applied to the surface of a material constituting a conductive layer such as a copper foil, followed by drying and curing;
- a sputtering method and a plating method in which a conductive layer is directly formed, and a lamination method in which a thermoplastic polyimide film is pressed.
- An advantage of the casting method is that, as in the case of electrolytic copper foil, there is unevenness on the bonding surface showing a sufficient anchor effect, and only a conductor forming material that has been subjected to a treatment for improving the bonding strength is used for bonding such as a rolled foil.
- the point is that a material having a low surface roughness level and various other metal foils can be used.
- the two-layer substrate manufactured by the casting method has excellent adhesion between the polyimide film and copper, and also has excellent heat resistance, flame resistance, electrical properties, and chemical resistance.
- the disadvantage of the casting method is that it is difficult to use a thin conductive layer, which is not suitable for forming a fine pattern circuit.
- the sputtering method and the plating method arbitrarily control the thickness of the conductive layer.
- the biggest feature is that you can do it. This is because a fine pattern circuit can be easily formed by using a very thin conductive layer.
- a drawback of the sputtering method and the plating method is that, since copper or the like is deposited on an existing smooth polyimide substrate to form a conductive layer, the adhesion between the conductive layer and the polyimide substrate is weak.
- Patent Document 1 discloses that in order to improve the adhesion between the conductive layer of the two-layer substrate and the polyimide substrate using the sputtering method and the plating method, as disclosed in Patent Document 1, nickel, cobalt, chromium, etc. It has been proposed to provide a vapor-deposited metal film as an intermediate layer between a polyimide resin base material and a copper layer as a conductive layer to improve adhesion. Further, Patent Document 2 discloses that the polyimide resin base material and the copper layer serving as a conductive layer can be formed in the resin of the polyimide resin base material even if the insulating property of the base material is sacrificed to a certain degree.
- Patent Document 3 0.01 to 2% by weight of oxidized aluminum or oxidized silicon is contained in the polyimide resin of a polyimide resin substrate constituting a two-layer substrate. It is proposed that plasma treatment of the resin surface can provide good adhesion between the polyimide resin base material and the copper layer that is the conductive layer.
- Patent Document 4 As an alternative to the above-described method, a die disclosed in Patent Document 4 is disclosed as one that can maintain the adhesion between the polyimide resin base material and the copper layer relatively well.
- the rect metallization method has been proposed. By adopting this direct metallization method, it has become possible to form a thin conductive layer while securing a certain degree of adhesion even if a conductive layer is directly formed on a polyimide resin base material. Is
- Patent Document 1 Japanese Patent Application Laid-Open No. 5-283848
- Patent Document 2 JP-A-8-330728
- Patent Document 3 JP 2001-151916 A
- Patent Document 4 JP 2001-73159 A
- the present inventors have conducted intensive studies and as a result, have found that the polyimide resin base material according to the following invention is provided. It has been conceived that the use of the polyimide resin makes it possible to stabilize the adhesion between the polyimide resin base material and the copper layer after the two-layer substrate is subjected to the heat treatment without any variation.
- the present invention will be described.
- the polyimide resin base material according to the present invention is a polyimide resin base material used as a constituent material of a wiring board, wherein a predetermined concentration of silicon is contained in a layer having a top surface force of 3 to 5 nm deep of the polyimide resin base material. It is characterized by including.
- the term "3-5 nm depth from the outermost surface” as used herein means that a region at a depth of 3 nm from the outermost surface of the polyimide resin base material must contain at least a predetermined concentration of silicon.
- wiring board refers to not only a printed wiring board obtained by forming a conductive layer using a laminating method and a direct metallization method and then employing an etching method but also a vapor deposition method.
- the term includes a wiring board and the like obtained by employing a full additive method of directly forming a circuit shape by employing a plating method.
- the polyimide resin base material is basically a resin solution obtained by reacting an aromatic tetrabasic acid and an aromatic diamine component in a solvent, and processing the resin solution into a film or the like using the resin solution.
- the resin solution is produced by impregnating the resin solution into a skeleton material such as a glass cloth and then dehydrating by heating or dehydrating by a process by a chemical reaction.
- a depth of 3 to 5 nm from the outermost surface of the adhesion surface of the polyimide resin base material with the metal conductive layer is considered.
- silicon is contained in the layer at a predetermined concentration. The silicon at this time only needs to be present at least near the surface of the polyimide resin, and is not intended to be present only near the surface of the polyimide resin base material. Therefore, the inside of the polyimide resin substrate may contain silicon of the same concentration.
- the basic technical idea of the present invention is that "in a polyimide resin base material for producing a metal-clad laminate, the inside of a layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material is 0. 1 atomic%-a polyimide resin base material containing silicon at a concentration of 1.8 atomic%. " Can be done. Therefore, by containing silicon at a concentration of 0.1 atomic% to 1.8 atomic% in a layer 3 to 5 nm deep from the outermost surface of the polyimide resin base material, the surface of the polyimide resin base material becomes conductive. Adhesion with the copper layer provided as a layer, particularly after heating, can be significantly improved.
- polyimide resin base material is used to refer to all types of materials such as a film initially formed, a polyimide layer manufactured by a casting method, and a polyimide layer formed by an electrodeposition method. It is assumed that the polyimide resin contains glass cloth, aramide fiber or the like as a skeleton material in the polyimide resin.
- the copper layer as a conductive layer is also formed by any of the manufacturing methods such as a method using a copper foil, a method of forming a copper layer by a plating method, and a method of forming a thin film by a sputtering deposition method and growing by a plating method. It is possible to adopt.
- silicon has a predetermined concentration in a layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material. Therefore, even if silicon exists at a depth deeper than 5 nm from the outermost surface, it does not contribute to the adhesion to the conductive layer.
- the silicon concentration in this layer is preferably 0.1 atomic% to 1.8 atomic%. When the content is less than 0.1 atomic%, the adhesion to the conductive layer cannot be improved even with a polyimide resin substrate obtained by any production method. And, even if the silicon concentration exceeds 1.8 atomic%, the effect of improving the adhesion cannot be obtained any more, and the adhesion cannot be further improved.
- the first pattern is described as follows.
- a polyimide resin base material for manufacturing a metal-clad laminated board in which a conductive layer is formed by a direct metallization method a three-dimensional pattern is formed from the outermost surface of the polyimide resin base material.
- the first pattern is a polyimide resin substrate used when a conductive layer is formed on the surface of the polyimide resin substrate by a direct metallization method.
- This direct metallization method is widely known.
- a ring opening treatment is performed on the surface of the imide resin base material to adsorb the metal ions forming the seed layer, and the metal ions are reduced and precipitated on the surface of the polyimide resin base material to form a seed layer.
- This is a method for obtaining a metal-clad laminate by depositing a main metal component that forms a conductive layer to form a conductive layer.
- the silicon concentration on the surface of the polyimide resin substrate used in the direct metallization method is controlled within the following range.
- FIG. 1 shows a correlation between “peeling strength after heating” and “silicon concentration near the surface of the polyimide resin base material”.
- the silicon concentration referred to in the present invention is 1. It can be seen that saturates around 2 atomic%.
- the peel strength after heating a level of 0.2 kgf Zcm or more after heating at 150 ° C. for about 168 hours is required.
- the layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material contains silicon at a concentration of 0.4 atomic% to 1.2 atomic%. . It is natural that there is some variation in the process depending on the manufacturing process, and from the viewpoint of quality safety, it is more preferably in the range of 0.5 atomic% to 1.0 atomic%. If the silicon concentration exceeds 1.2 atomic% and becomes too high, the variation in the peel strength after heating tends to increase.
- the conductive layer formed by the direct metallization method can be made of copper, silver, nickel, gold, an alloy thereof, or the like as long as there is no problem when used as a product. Does not need. However, it is preferable that a seed layer is formed on the surface of the polyimide resin base material, and a copper layer is deposited on the seed layer. Copper is a good conductor of electricity. It is the most widely used material for printed wiring boards and it is easy to recycle.
- the second pattern is described as "a polyimide resin base material for manufacturing a metal-clad laminate in which a conductive foil is laminated to form a conductive layer, a layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material.
- the second pattern is a polyimide resin substrate used when a conductive layer such as a metal foil is adhered to the surface of the polyimide resin substrate to form a conductive layer.
- the bonding of the metal foil or the like to the surface of the polyimide resin base material is performed by hot pressing the metal foil to the polyimide resin base material while heating it at about 190 ° C. (Hereinafter referred to as “laminating method”), which has been practiced for a long time and does not require any special explanation. Therefore, the detailed description here is omitted.
- laminating method which has been practiced for a long time and does not require any special explanation. Therefore, the detailed description here is omitted.
- the silicon concentration in the vicinity of the surface of the polyimide resin substrate used in the laminating method is controlled within the range described below. That is, by controlling the silicon concentration in the vicinity of the surface of the polyimide resin base material, the peel strength after heating, particularly the peel strength after heating, is increased.
- FIG. 2 shows a correlation between “peeling strength after heating” and “silicon concentration near the surface of the polyimide resin base material”.
- the peeling strength after heating increases, and the silicon concentration becomes 0.2 atom. %
- a peel strength of 0.2 kgfZcm can be obtained after heating, and a silicon concentration of 0.5 atomic% can provide a peel strength of 0.4 kgfZcm after heating.
- the peel strength after heating is saturated when the silicon concentration is around 1.7 atomic%.
- the peel strength after heating is required to be at least 0.2 kgfZcm after heating at 150 ° C.
- the layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material contains silicon at a concentration of 0.2 atomic% to 1.7 atomic%. .
- the range is more preferably 0.5 atom% to 1.7 atom%.
- the conductive layer formed by the lamination method can be made of a copper foil, a silver foil, a nickel foil, an alloy thereof, or the like as long as there is no problem when used as a product. Absent. However, it is preferable to use copper foil. Copper is a good conductor of electricity. It is the most widely used material for printed wiring boards, and it is easy to recycle. In addition, any of the rolled copper foil and the electrolytic copper foil can be selectively used as the copper foil here.
- the printed wiring board manufactured using the polyimide resin base material according to the present invention is a so-called flexible printed wiring board, and usually requires formation of a fine pitch circuit. Therefore, the carrier foil and the thin copper layer are also attached to each other through the bonding interface layer.
- electrolytic copper foil with a carrier foil that looks like ⁇ .
- the electrolytic copper foil with carrier foil is used by attaching the electrolytic copper foil layer to a substrate by hot pressing with the carrier foil attached, and then removing the carrier foil before use. Therefore, the presence of the carrier foil
- a copper layer having a thickness of 3 m or less can be easily provided on the substrate surface.
- Silicon as referred to herein may be supplied by i) dispersing the particles of silicon oxide in a polyimide resin solution to form a film, or ii) supplying the acid to the surface of the polyimide resin substrate.
- a solution containing a dangling silicon, a silane coupling agent, or a silicone oil is supplied by applying the coating, or iii) a simple silicon, silicon oxide, or the like is vapor-deposited or sputtered on the surface of the polyimide resin base material. It is possible to adopt a method such as the ion plantation method and the like to supply.
- the methods i) and ii) are very simple and industrially advantageous.
- the force i) depends on the dispersibility of the particles when using a silicon oxide powder. It is difficult to control the silicon concentration in the vicinity of the surface of the polyimide resin base material because the uneven distribution of silicon dioxide particles is likely to occur near the surface of the powder particles.
- the content of silicon oxide must be set as high as possible.However, when the content exceeds a certain amount, the mechanical strength and the heat resistance, which are advantages of polyimide resin base, are rich in flexibility. It degrades various properties such as performance and electrical properties.
- the polyimide resin base material is very stable chemically, even if various polar solvents are used as the solvent of the solution containing silicon oxide, the polyimide resin base material can be applied to the surface of the polyimide resin base material after application. It is difficult to stably fix the toner. Also, even when silicon oil is used, there is a tendency that variation in fixation to the surface of the polyimide resin base material by applying silicone oil occurs at a certain level. Therefore, when the treatment methods i) and ii) are adopted, it can be said that it is preferable to use another adhesion improving treatment such as a plasma treatment.
- another adhesion improving treatment such as a plasma treatment.
- the method iii) allows the target amount of silicon to be fixed on the surface of the polyimide resin substrate very efficiently, and the force is excellent in uniformity when viewed in a plane. It is also a method that can prevent uneven distribution of elements.
- X-ray photoelectron spectroscopy (sometimes referred to as ESCA or XPS) to measure the silicon concentration in the layer 3-5 nm deep from the outermost surface of the polyimide resin base material.
- X-ray photoelectron spectroscopy means that when a solid surface is irradiated with X-rays in a vacuum, it is excited by X-rays. Electrons jump out of the surface atomic layer and are called photoelectrons, which indicate the energy value peculiar to the element. This is an analysis method that specifies the composition by measuring the energy distribution.
- the present invention is suitable for measuring the silicon concentration in the layer having a depth of 3 to 5 nm from the outermost surface of the polyimide resin base material.
- the metal-clad laminate obtained by using the polyimide resin substrate according to the present invention described above has a low adhesion stability between the polyimide resin substrate and the metal conductive layer. It is excellent, and even after the heat treatment, it is possible to significantly reduce the positional variation in the laminated sheet and the variation between manufacturing lots.
- the polyimide resin base material used as a constituent material of the laminated board is a polyimide resin base such as a polyimide resin base or a polyimide pre-prepared resin containing a skeleton material such as glass fiber peramide fiber. It is described as a concept that includes all of the base materials. Therefore, it includes all of the thick polyimide resin base material used in the same manner as the ordinary rigid substrate and the thin polyimide resin base material used in the flexible printed wiring board.
- the polyimide resin base material according to the present invention when the conductive layer is formed using the direct metallization method, the polyimide resin base material after the heat treatment is performed. This is particularly effective in reducing the noise that occurs in the adhesion to the conductive layer. At this stage, it is not clear why the use of the polyimide resin base material of the present invention is advantageous in the direct metallization method.
- the term "laminated board” according to the present invention is described as a concept including all the laminated boards that are used as materials for manufacturing rigid printed wiring boards and flexible printed wiring boards.
- the flexible printed wiring board referred to herein is a laminate in which a conductive layer and a polyimide resin base material layer are adhered to each other. It is described as a concept that includes the case where layers are interposed, such as tape automated bonding (TAB), chip-on-flexible board (COF), etc. Described as a concept that includes all products.
- TAB tape automated bonding
- COF chip-on-flexible board
- a two-layer substrate composed of a copper layer and a polyimide resin layer was manufactured using the polyimide resin base material according to the present invention by using the so-called direct metallization method.
- the results of manufacturing a flexible printed wiring board using a layer substrate are shown below.
- a double-sided two-layer substrate having copper layers on both sides of the polyimide resin substrate was manufactured.
- the results of measuring the peel strength of the metal conductive layer shall be shown.
- each step will be described in order.
- a 38 ⁇ m thick film of Kapton 150EN (trade name, manufactured by Toray DuPont) was used as the polyimide resin base material.
- the surface of the polyimide resin film was subjected to a plasma treatment.
- ESCA analysis showed that the polyimide resin substrate contained silicon at a concentration of 1.1 atomic% in a layer 3-5 nm deep from the top surface where the silicon-containing coating was formed.
- the polyimide resin base material whose silicon concentration in the surface layer was adjusted as described above was subjected to an alkali treatment to open a imide ring and form a carboxyl group on the surface to carry out a ring opening step.
- the alkali treatment is performed by adding the potassium hydroxide to a solution having a potassium concentration of 5.Omol / 1 and a solution temperature of 60 ° C. This was performed by immersing the imide resin base material for 5 minutes. After the completion of the alkali treatment, the substrate was sufficiently washed with water to remove the alkali solution to which the surface power of the polyimide resin base material also adhered.
- the polyimide resin substrate washed with water after the ring opening step was completed was treated in the neutralization step.
- the ring-opened carboxyl group was formed, and the strongly alkalized polyimide resin base material was immersed in an acid solution to perform a neutralization operation.
- the solution used for the neutralization was a hydrochloric acid solution, and the conditions of the concentration of the hydrochloric acid solution, the temperature of the 6. Omol / U solution, 25 ° C, and the processing time of 1 minute were adopted.
- a washing treatment was performed.
- a cobalt ion adsorption step the neutralized carboxyl group of the polyimide resin base material is brought into contact with the cobalt-containing solution, and cobalt ions are adsorbed on the carboxyl group to cause the polyimide ion to adsorb.
- Carboxyl cobalt salts were formed on both sides of the fat base material.
- the cobalt-containing solution used here was a cobalt sulfate solution having a cobalt concentration of 0.05 molZl and a solution temperature of 23 ° C, and was immersed in this solution for 1 minute. Then, it was washed with water to remove the cobalt sulfate solution remaining on the surface of the polyimide resin base material.
- a carboxy cobalt salt formed on the surface of the polyimide resin base material was reduced to form a cobalt thin film on the surface of the polyimide resin base material.
- This reduction is achieved by immersing the polyimide resin base material with the carboxyl cobalt salt formed in a sodium borohydride solution at a concentration of 0. Olmol / U at a temperature of 25 ° C for 5 minutes and bringing it into contact with the reducing agent. It was done by doing. Then, the surface was washed with water to remove the reducing agent to which the surface force was attached.
- the above-described cobalt ion adsorption step and cobalt thin film forming step were repeated five times.
- a nickel plating layer having a thickness of 500 nm was provided by an electrolytic method on the surface of the polyimide resin substrate on which the copper thin film was formed in the copper thin film forming step. At this time, the nickel plating was used as a nickel sulfamate plating bath.
- a copper component was further electrodeposited, and the copper thin film was plated up to a copper layer having a thickness of 18 ⁇ m.
- the peel strength measurement sample manufactured by this circuit etching was a linear circuit having a circuit width of 5 mm and a length of 10 cm, and a 90 ° peel test device (manufactured by Yuryi Giken Co., Ltd.) ) was used to measure the peel strength of the circuit.
- the peel strength measurement sample manufactured as described above has a size of 32 cm square, and can measure the peel strength S at 60 points in the plane.
- the present inventors manufactured ten samples for measuring the peel strength.
- Peeling strength was measured by arbitrarily extracting one sample for measurement in order to check the variation of the sample for peeling strength in the same plane, and measuring the average peeling in the same plane.
- the strength and standard deviation (hereinafter referred to as “average peel strength A” and “standard deviation A”) were determined.
- the peel strength was measured separately for the normal peel strength and the peel strength after heating at 150 ° C for 168 hours.
- the average peel strength A (normal) 0.89 kgfZcm
- the standard deviation A (normal) 0 Olkgf / cm
- the average peel strength A (after heating) 0.35 kgfZcm
- the standard deviation A ( After heating) 0.03 kgfZcm.
- a lamination method in which a copper foil is laminated using a polyimide resin base material containing the glass cloth according to the present invention as a skeletal material is employed to form a two-layer structure including a copper layer and a polyimide resin layer.
- the results of manufacturing a substrate and manufacturing a rigid printed wiring board using this two-layer substrate are shown.
- both sides of the polyimide resin base material provided with copper layers on both sides are provided.
- a two-layer substrate was manufactured.
- the results of measuring the peel strength of the metal conductive layer shall be shown.
- each process will be described in order.
- a glass polyimide resin base material having a thickness of 38 ⁇ m was used as the polyimide resin base material. Then, on both surfaces of this polyimide resin base material, a silicon-containing film having a thickness of 2.5 nm equivalent to silicon oxide was formed by sputtering. ESCA analysis showed that the polyimide resin substrate contained silicon at a concentration of 1.41 at.% In a layer 3-5 nm deep from the outermost surface.
- electrolytic copper foil having a nominal thickness of 18 ⁇ m was bonded to both surfaces of the polyimide resin base material under the conditions of 210 ° C. for 3 hours and a press pressure of 15 kgZcm 2 to form a two-layer substrate.
- An etching resist layer was formed on the surface of the copper layer of the two-layer substrate, exposed, developed, and etched to perform an etching step of forming a circuit for measuring the peel strength. Then, it was washed with water and vacuum-dried at 150 ° C. for 1 hour. This is “Sample 2b”.
- the peel strength was measured in the same manner as in Example 1.
- the average peel strength A (normal) 0.98 kgfZcm
- the standard deviation A (normal) 0.9 Olkgf / cm
- the average peel strength A (after heating) 0.44 kgfZcm
- the standard deviation A (heating) After) 0.02 kgf / cm
- average peel strength B (normal) 0.99 kgfZcm
- standard deviation B (normal) 0.02 kgf Zcm
- average peel strength B (after heating) 0.43 kgfZcm
- Standard deviation B (after heating) was 0.04 kgf / cm.
- silicon-containing films having various atomic% concentrations were formed within the above silicon concentration range of 0.2 atomic% to 1.7 atomic%.
- Table 2 shows the relationship between the silicon concentration and the peel strength referred to in the present invention at that time. The samples at this time are shown as sample 2a, sample 2b, sample 2c, sample 2d, sample 2e, and sample f.
- the peeling strengths after heating of Samples 2a to 2f listed in Table 2 are all 0.2 kgfZcm or more, and the silicon concentration is 0.5 atomic%. If it exceeds, the peel strength after heating exceeds 0.4 kgfZcm.
- Example 1 the application of the silane coupling agent of Example 1 was omitted, and 3-5 nm was measured from the surface of a 38 ⁇ m-thick film of Capton 150EN (trade name, manufactured by Toray DuPont). The silicon concentration in the layer at the depth was set to 0.00 atomic% (Comparative sample 1).
- Standard deviation A (after heating) 0.02 kgfZcm, average peel strength B
- a glass-polyimide base material from which the snorting treatment of the silicon oxide silicon of Example 2 was omitted was used.
- the concentration was 0.0 at% in the layer having a depth of 35 nm from the outermost surface of the polyimide resin substrate.
- the silicon oxide of Example 2 was sputtered so as to have a concentration of 0.1 at% in a layer having a depth of 3 to 5 nm.
- Example Needle ratio of comparative example By comparing the above-described example with the comparative example, the present polyimide resin base material has a maximum surface force of 3 to 5 nm within the layer. Incorporation of silicon at the concentration specified in this document improves the adhesion between the polyimide resin base material and the conductive layer, and furthermore, the value when viewed from the peeling strength, and the variability of the value Normal condition and after heating In both cases. In the comparative example, the peeling strength after heating was too small, resulting in a lack of adhesion.
- the polyimide resin base material according to the present invention contains silicon at a predetermined concentration in a layer having a depth of 3 to 5 nm from the outermost surface, and a metal produced by using the same is used.
- the laminated laminate improves the adhesion between the polyimide resin base material and the conductive layer in the normal state and after the heat treatment, and has a very small variation in peel strength, which is an index indicating the adhesion. In other words, the quality design and quality control of the wiring board becomes easy, which effectively contributes to the reduction of the total product manufacturing cost.
- FIG. 1 shows the relationship between “peeling strength after heating” and “silicon concentration near the surface of polyimide resin base material”. It is a graph which shows a correlation (direct metallization method).
- FIG. 2 is a graph showing a correlation between “peeling strength after heating” and “silicon concentration near the surface of a polyimide resin substrate” (laminating method).
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Abstract
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JP2003357889A JP2007035658A (ja) | 2003-10-17 | 2003-10-17 | ポリイミド樹脂基材及びそのポリイミド樹脂基材を用いた配線板 |
JP2003-357889 | 2003-10-17 |
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WO2005039258A1 true WO2005039258A1 (ja) | 2005-04-28 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US7638854B2 (en) | 2005-01-18 | 2009-12-29 | Sharp Kabushiki Kaisha | Semiconductor device, display module, and manufacturing method of semiconductor device |
EP3730007A1 (en) | 2019-03-22 | 2020-10-28 | SAGA COFFEE S.p.A. | Brewing device for producing a beverage from a single-serve capsule |
IT201900013458A1 (it) | 2019-07-31 | 2021-01-31 | Saga Coffee S P A | Dispositivo infusore per la preparazione di bevande da capsule monouso |
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JP2002256443A (ja) * | 2001-02-27 | 2002-09-11 | Japan Science & Technology Corp | メッキ方法 |
JP2004277424A (ja) * | 2003-03-13 | 2004-10-07 | Air Products & Chemicals Inc | ポリヒドロキシアルキルアルキレンジアミンのジェミニグリシジルエーテル付加物 |
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2003
- 2003-10-17 JP JP2003357889A patent/JP2007035658A/ja active Pending
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2004
- 2004-10-15 WO PCT/JP2004/015222 patent/WO2005039258A1/ja not_active Application Discontinuation
Patent Citations (3)
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JPH11277699A (ja) * | 1998-03-31 | 1999-10-12 | Ube Ind Ltd | 金属層積層フィルム |
JP2002256443A (ja) * | 2001-02-27 | 2002-09-11 | Japan Science & Technology Corp | メッキ方法 |
JP2004277424A (ja) * | 2003-03-13 | 2004-10-07 | Air Products & Chemicals Inc | ポリヒドロキシアルキルアルキレンジアミンのジェミニグリシジルエーテル付加物 |
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---|---|---|---|---|
US7638854B2 (en) | 2005-01-18 | 2009-12-29 | Sharp Kabushiki Kaisha | Semiconductor device, display module, and manufacturing method of semiconductor device |
EP3730007A1 (en) | 2019-03-22 | 2020-10-28 | SAGA COFFEE S.p.A. | Brewing device for producing a beverage from a single-serve capsule |
IT201900013458A1 (it) | 2019-07-31 | 2021-01-31 | Saga Coffee S P A | Dispositivo infusore per la preparazione di bevande da capsule monouso |
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