WO2005033784A1 - 半導体光電子導波路 - Google Patents
半導体光電子導波路 Download PDFInfo
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- WO2005033784A1 WO2005033784A1 PCT/JP2004/014600 JP2004014600W WO2005033784A1 WO 2005033784 A1 WO2005033784 A1 WO 2005033784A1 JP 2004014600 W JP2004014600 W JP 2004014600W WO 2005033784 A1 WO2005033784 A1 WO 2005033784A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 325
- 239000010410 layer Substances 0.000 claims abstract description 401
- 239000012792 core layer Substances 0.000 claims abstract description 80
- 230000005693 optoelectronics Effects 0.000 claims abstract description 80
- 230000003287 optical effect Effects 0.000 claims abstract description 73
- 238000005253 cladding Methods 0.000 claims description 225
- 238000002955 isolation Methods 0.000 claims description 53
- 230000000694 effects Effects 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 11
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Definitions
- the present invention relates to a semiconductor optoelectronic waveguide, and more particularly, to a semiconductor optoelectronic waveguide having a nin type hetero structure that enables stable operation of an optical modulator. Also, the present invention relates to a semiconductor optoelectronic waveguide having an electrical isolation region structure of a photoelectron waveguide using a nin-type head structure and used in a long-wavelength ultrahigh-speed optical modulator.
- a typical conventional external modulator used for long-distance transmission of optical signals is LiNbO (LN).
- the operating principle of this LN modulator is to cause a change in the refractive index based on the electro-optic effect in an optoelectronic waveguide that combines an optical waveguide and an electric waveguide, and to give a phase change to light by the change in the refractive index. It is.
- Such an LN modulator must function as an optical intensity modulator incorporating an optical phase modulator or a Mach-Zehnder (MZ) interferometer, or as a high-performance optical switch composed of multiple waveguides. Is possible.
- a semiconductor optical modulator based on the same operating principle as the LN modulator is also known.
- a GaAS having a Schottky electrode arranged on semi-insulating GaAs and using it as an optoelectronic waveguide is known.
- optical modulators and InPZlnGaAsP optical modulators that use a hetero pn junction to efficiently apply a voltage to a waveguide core in addition to confining light.
- Fig. 9 is a diagram showing a band diagram of a semiconductor optoelectronic waveguide constituting a conventional typical InPZlnGaAsP optical modulator.
- reference numeral 101 denotes a core layer of the waveguide
- 102-1 and 102-. 2 is a first cladding layer
- 103-1 and 103-2 are p-type and n-type second cladding layers, respectively.
- 100-1 and 100-2 are electrons and holes, respectively, and a voltage is applied to the p-type second cladding layer 103-1 and the n-type second cladding layer 103-2, A desired electro-optic effect is induced in the core layer 101 to realize light modulation.
- the leakage current can be reduced, and the carriers generated by light absorption can easily flow to the outside. As a result, stable operation is realized.
- the GaAs optical modulator provided with the Schottky electrode has a problem that the operating voltage is increased.
- the InPZlnGaAsP optical modulator has a narrow operating band due to the electric signal propagation loss due to the high resistance of the p-type cladding layer, and has a long waveguide due to the large light absorption of the p-type cladding layer. Therefore, there has been a problem that it is difficult to reduce the operating voltage because it is not possible to increase the operating voltage.
- the propagation loss of the electric signal in the InPZlnGaAsP optical modulator occurs in the process of charging and discharging the pn junction through the resistance of the signal line and the resistance of the p-type second cladding layer 103-1.
- the resistance of the p-type second cladding layer 103-1 is a problem that cannot be avoided because the mobility of holes is low and the resistance value is high, which is due to physical properties of the material.
- nin-type waveguides Has been proposed.
- FIG. 10 shows a cladding layer (103) on both sides of the waveguide of the InPZlnGaAsP optical modulator shown in FIG.
- FIG. 3 is a diagram showing a band diagram of a nin-type semiconductor optoelectronic waveguide in which 1 and 103-2) are both n-type, and a device is operated by applying a voltage between these two n-type electrode layers.
- reference numeral 111 is a core layer of the waveguide, and 112-1 and 112-2 are first cladding layers.
- both electrode layers (114-1 and 1142) are n-type, and the p-type second cladding layer 103-1 in FIG. It can be replaced by an Fe-doped semi-insulating layer 115 having a deep Fe level 116 and an n-type electrode layer 114-1 (for example, see Patent Document 1).
- the n-type electrode layer 1142 corresponds to the n-type second cladding layer 103-2 in FIG. 9, and 110-1 and 110-2 are electrons and holes, respectively. It is.
- the deep Fe level 116 of the semi-insulating layer 115 acts as an ionized acceptor, a band is bent by the charge to form a potential barrier for electrons, and an arrow in the figure indicates As shown by, the electron 1141 and the hole 110-2 near the curved portion of the band recombine via the deep Fe level 116 in the semi-insulating layer 115. Therefore, the leakage current of electrons is suppressed by the potential barrier, and an electric field can be applied to the core layer 111.
- the density of the deep Fe level 116 is sufficiently high V, so that the ionization state of the level changes depending on the bias. .
- Such bias dependence of the ionization state causes a change in the depletion layer thickness due to a change in voltage, and the result is that the proportional relationship between the applied voltage and the electric field applied to the core layer 111 is not maintained. Arises.
- the interval of capture and emission of carriers by the deep Fe level 116 is relatively long, it is difficult to respond to high-speed modulation signal processing, and there is a problem that the modulation intensity has frequency dispersion.
- FIG. 11 is a configuration diagram of a conventional semiconductor optical modulator having a nin-type structure.
- reference numeral 121 denotes an n-type third semiconductor cladding layer
- 122 denotes a p-type fifth semiconductor cladding layer
- 123 is a first semiconductor cladding layer
- 124 is a semiconductor core layer having an electro-optic effect
- 125 is a second semiconductor cladding layer
- 126 is an n-type fourth semiconductor cladding layer
- 127 and 128 are n-type electrodes
- 129 Indicates an electrical isolation region formed by the concave etching.
- n-type third semiconductor cladding layer 121 On the n-type third semiconductor cladding layer 121, a p-type fifth semiconductor cladding layer 122 and a first semiconductor cladding layer 123 are sequentially laminated, and the first semiconductor cladding layer 123 and A semiconductor core layer 124 having an electro-optical effect is provided so as to be sandwiched between the second semiconductor cladding layer 125. Further, on the second semiconductor cladding layer 125, an n-type fourth semiconductor cladding layer 126 having an electrical isolation region 129 formed by concave etching is laminated. An electrode 128 is provided on the fourth semiconductor cladding layer 126, and electrodes 127 are provided on both sides of the convex portion of the third semiconductor cladding layer 121.
- a part of the n-type InP cladding layer 126 is etched in a concave shape to provide the electrical isolation region 129. And light scattering loss has occurred as a result. Further, in the conventional waveguide structure, the controllability of the fourth semiconductor cladding layer 126, which is relatively deep in etching, has been a problem.
- the electrical separation between the modulating waveguide portion and the connection waveguide portion outside the modulating portion is performed by partially separating the upper n-type cladding layer. Since this is performed by removing a part of the waveguide, a concave portion 129 has been formed in the waveguide. This is because light loss occurs due to changes in the propagation mode of light in the electrical isolation region from the connection waveguide and in the main waveguide from the electrical isolation region. There's a problem.
- the present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor optoelectronic waveguide having a nin type hetero structure which enables stable operation of an optical modulator. To provide.
- an object of the present invention is to solve the problem of light loss that does not greatly affect the propagation of an optical mode, as compared with a conventional electrical isolation region formed by forming a concave portion.
- An object of the present invention is to provide a semiconductor optoelectronic waveguide having an electric isolation region structure with good and stable characteristics.
- an object of the present invention is to solve the above-mentioned problem that the core layer voltage fluctuates in a semiconductor optoelectronic waveguide such as a nin-type InPZlnGaAsP optical modulator, and realize a stable operation of the semiconductor optoelectronic waveguide. Is to do.
- Patent Document 1 JP 2003-177368 A
- Patent Document 2 U.S. Pat.No. 5,647,029
- the semiconductor optoelectronic waveguide of the present invention includes a first core surface and a first main surface arranged on the other main surface of a semiconductor core layer having an electro-optical effect.
- a pn junction layer in which the second semiconductor cladding layer side is p-type and an opposite side to the second semiconductor cladding layer is n-type, and a pn junction layer on the pn junction layer and the other main surface side of the semiconductor core layer.
- a semiconductor optoelectronic waveguide of the present invention it becomes possible to easily control the band profile of the nin-type heterostructure provided in the optoelectronic waveguide, and thus the optical modulator It is possible to provide a semiconductor optoelectronic waveguide which enables stable operation of the semiconductor optical waveguide. This realizes more stable optical modulation operation without impairing the characteristics of the nin-type heterostructure semiconductor optoelectronic waveguide, which has a low drive voltage, and contributes to lower power consumption and lower cost of the module. I do.
- the semiconductor optoelectronic waveguide of the present invention comprises a semiconductor core layer having an effective electro-optic effect, and a first layer sandwiching the semiconductor core layer above and below the semiconductor core layer and having a larger band gap than the semiconductor core layer.
- a third semiconductor cladding layer disposed between the first semiconductor cladding layer and the third semiconductor cladding layer, the third semiconductor cladding layer including a p-type dopant, and a band higher than the semiconductor core layer;
- a fifth semiconductor layer having a large gap, at least one electrical isolation region formed by modifying a material of the fourth semiconductor cladding layer by an ion implantation method, and a fourth semiconductor cladding layer.
- the problem of optical loss that does not significantly affect the propagation of the optical mode is solved, as compared with the conventional electrical isolation region formed by forming a concave portion.
- the present invention is effective in stably realizing the characteristics of an optical modulator using a nin-type hetero structure having a characteristic of a low driving voltage, and reduces the optical power through reduction of the input optical power. This can contribute to lower power consumption and lower cost of the modulator module.
- the semiconductor optoelectronic waveguide of the present invention comprises a semiconductor core layer having an electro-optic effect, and first and second semiconductor layers sandwiching the upper and lower sides of the semiconductor core layer and having a larger band gap than the semiconductor core layer.
- the third semiconductor cladding layer and the first semiconductor cladding layer are disposed on the substrate side, and the second semiconductor cladding layer and the fourth semiconductor cladding layer are disposed on the substrate side.
- the drive voltage can be reduced, it is effective in stably realizing the characteristics of an optical modulator using a nin-type hetero structure, which has the feature, allowing higher input optical power.
- the output of the optical transmission module can be increased.
- FIG. 1A is a perspective view illustrating an embodiment of a semiconductor optoelectronic waveguide according to the present invention.
- FIG. 1B is a diagram showing a band diagram of the semiconductor optoelectronic waveguide shown in FIG. 1A.
- FIG. 2 is a diagram showing a band diagram of a semiconductor optoelectronic waveguide according to another embodiment of the present invention.
- FIG. 3 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 4 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 5 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 6 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 7 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 8 is a perspective view for explaining still another embodiment of the semiconductor optoelectronic waveguide according to the present invention.
- FIG. 9 is a diagram showing a band diagram of a semiconductor optoelectronic waveguide constituting a conventional typical InPZlnGaAsP optical modulator.
- FIG. 10 is a diagram showing a band diagram of a nin-type semiconductor optoelectronic waveguide in which cladding layers on both sides of the waveguide of the InPZlnGaAsP optical modulator shown in FIG. 9 are both n-type.
- FIG. 11 is a perspective view for explaining a conventional semiconductor optical modulator having a nin-type structure.
- FIG. 1A and 1B are configuration diagrams for explaining one embodiment of a semiconductor optoelectronic waveguide according to the present invention.
- FIG. 1A is a perspective view of the optoelectronic waveguide
- FIG. FIG. 3 is a diagram showing a band diagram.
- reference numeral 11 denotes a semiconductor core layer
- 12-1 and 12-2 denote first semiconductor clad layers disposed on both main surfaces of the semiconductor core layer 11
- 13-1 and 13-2 denote first semiconductors.
- the second semiconductor clad layers are respectively disposed on the clad layers 12-1 and 12-2.
- 14 -1 and 14 2 are third semiconductor cladding layers.
- 15 and 16 are a p-type layer and an n-type layer, respectively, and both layers 15 and 16 constitute a pn junction layer.
- a p-type layer 15 is disposed on the second semiconductor clad layer 13-1, and a third semiconductor clad layer 141 is disposed on the n-type layer 16.
- a third semiconductor clad layer 142 is disposed below the second semiconductor clad layer 13-2.
- the structure of the core layer 11 is determined so that the electro-optic effect works effectively at the operating light wavelength and light absorption does not become a problem.
- a quantum well layer and a barrier layer are formed of an InGaAlAs conjugate, and the GaZAl composition of these layers is varied to form a multiple quantum well core.
- Layer 11 The upper and lower surfaces of the core layer 11 have a band gap larger than the band gap of the core layer 11 so that carriers generated by light absorption are not trapped at the hetero interface.
- Intermediate cladding layers (12-1, 12-2) with compositions such as InGaAlAs are provided
- the cladding layers 13-1 and 13-1 having a band gap larger than these intermediate cladding layers and having a composition such as InGaAlAs. — 2 are provided! /
- a p-type layer 15 of, for example, InGaAlAs and an n-type layer 16 of, for example, InGaAlAs are sequentially laminated, and in an applied voltage range used in an operation state, The entire region of the p-type InGaAlAs layer 15 and the partial region or the entire region of the n-type InGaAlAs layer 16 are depleted.
- the doping concentration profile of these layers is determined so that the potential change of the band in such a depletion region becomes sufficiently large, that is, a sufficient potential barrier against electrons is induced.
- the doping concentration of the layers is a p-type layer 15 is 1 X 10 17 cm_ 3 or more, it is preferable that n-type layer 16 and 5 X 10 17 cm_ 3 or more.
- the doping concentration of the p-type layer 15 and 2 X 10 17 cm- 3 the doping concentration of the n-type layer 16 and 1 X 10 18 cm_ 3.
- n-type layers 14-1 and 14-2 having a composition such as InGaAlAs, which function as cladding layers, are provided.
- An electrode 18-1 is provided on the upper surface of the mold layer 14-1. Note that the band gap of these n-type layers 14-1 and 14-2 is set to be larger than the band gap of the intermediate cladding layers 12-1 and 12-2.
- the n-type layer 14-2 which is the lowermost layer of these laminated structures, is provided on a partial region of the main surface of the n-type electrode layer 17 having the electrode 182.
- a waveguide structure including a mesa structure having a cross section as illustrated in FIG. 1A is used, and electrodes 18-1 and 18-are formed while light is propagated through the waveguide.
- An electric signal is input from 2 to apply a voltage between the n-type layer 141 and the n-type layer 142.
- FIG. 1B shows a band diagram in a state where a voltage is applied.
- the potential barrier formed by the presence of the p-type InGaAlAs layer 15 and the n-type InGaAlAs layer 16 causes the n-type layer 14 1 Leakage current due to electron injection from is suppressed, while light absorption ( The generated holes 10-2 recombine (albeit slightly) through shallow, level acceptors and donors in the p-type InGaAlAs layer 15 and the n-type InGaAlAs layer 16, thereby applying a voltage to the core layer 11. Becomes possible.
- the waveguide of the conventional configuration induces a potential change by ionizing the depth and the level.
- the potential shape is surely controlled by determining the concentrations of the acceptor and the donor at a shallow level so that a desired electric field intensity is applied to the core layer 11.
- a pn junction layer including a p-type InGaAlAs layer 15 and an n-type InGaAlAs layer 16 is provided between the cladding layer 13-1 and the n-type layer 14-1. Force Instead of this configuration, it may be provided between the cladding layer 13-2 and the n-type layer 142!
- electrons 10-1 and holes 10-2 are generated by light absorption in the core layer 11, though slightly. Among these, the electrons 10-1 easily reach the n-type layer 142.
- the holes 10-2 may accumulate in the vicinity of the n-type InGaAlAs layer 16 having a steep band curve.
- the accumulated holes 10-3 act as a forward noise factor in the pn junction between the p-type InGaAlAs layer 15 and the n-type InGaAlAs layer 16, so that the potential noria in this region are depressed and the core layer This makes it difficult to apply a voltage to 11, and may cause electron injection from the n-type layer 141 side.
- Example 2 in order to quickly recombine such accumulated holes 10-3, the p-type InGaAlAs layer 15 and the n-type InGaAlAs layer 16 were formed as heavily doped layers, and the pn junction By reducing the thickness of the layer, the electrons and the accumulated holes are brought close to each other spatially, and the probability of interband recombination indicated by the arrow in FIG. 1B is increased. As a result, the holes 10-3 generated in the core layer 11 and accumulated near the n-type InGaAlAs layer 16 are quickly removed, and the potential formed by the p-type InGaAlAs layer 15 and the n-type InGaAlAs layer 16 is reduced. Variations in barrier height can be suppressed.
- the semiconductor optoelectronic waveguide of Example 3 is a layer corresponding to the n-type InGaAlAs layer 16 in FIG.
- doping is performed with an impurity that forms a deep level, such as Fe, together with the donor impurity.
- the doping amount of the impurity that forms the deep level is set sufficiently lower than the doping amount of the donor impurity. According to such doping, impurities that form deep levels do not significantly affect the band profile, but the probability of recombination through deep and levels increases, and the core absorbs due to light absorption.
- the holes generated in the layer 11 can be quickly removed.
- FIG. 2 is a diagram showing a band diagram of a semiconductor optoelectronic waveguide according to a fourth embodiment of the present invention.
- a layer corresponding to the n-type InGaAlAs layer 16 in FIG. 1 has a smaller band gap energy such as InGaAsP. This is an n-type layer 19.
- the valence band discontinuity between the p-type InGaAlAs layer 15 and the n-type InGaAsP layer 19 be smaller than the conduction band discontinuity. This is because holes are more likely to pass through the interface between the p-type InGaAlAs layer 15 and the n-type InGaAsP layer 19 as the valence band discontinuity is smaller.
- FIG. 3 is a perspective view for explaining Embodiment 5 of the semiconductor optoelectronic waveguide according to the present invention.
- reference numeral 21 denotes an n-type third semiconductor cladding layer
- 22 denotes a p-type fifth semiconductor clad layer.
- An n-type electrode, 29 indicates an electrical isolation region formed by ion implantation, and 29-1 indicates a connection waveguide region between the n-type fourth semiconductor cladding layer 26 and the electrical isolation region 29.
- n-type third semiconductor cladding layer 21 On the n-type third semiconductor cladding layer 21, a p-type fifth semiconductor cladding layer 22 and a first semiconductor cladding layer 23 are sequentially laminated, and the first semiconductor cladding layer 23 and A semiconductor core layer 24 having an electro-optical effect is provided so as to be sandwiched between the second semiconductor clad layer 25. Further, on the second semiconductor cladding layer 25, an n-type fourth semiconductor cladding layer 26 having an electrical isolation region 29 formed by ion implantation is laminated. An electrode 28 is provided on the fourth semiconductor clad layer 26, and electrodes 27 are provided on both sides of the convex portion of the third semiconductor clad layer 21.
- the semiconductor optoelectronic waveguide of the present invention has a semiconductor core layer 24 having an effective electro-optic effect, and a band gap larger than that of the parenthesized semiconductor core layer 24 sandwiching the semiconductor core layer 24 above and below.
- first and third semiconductor cladding layers 23 and 21 are arranged on the substrate (not shown) side.
- a fifth semiconductor layer 22 containing a p-type dopant and having a larger band gap than the semiconductor core layer 24 is inserted between the first semiconductor clad layer 23 and the third semiconductor clad layer 21.
- at least one electrical isolation region 29 is formed by ion implantation.
- individual electrodes 28 and 27 are provided, respectively, and a voltage is applied to the semiconductor core layer 24. It is structured to be.
- the substrate-side force also has the third InPn-type cladding layer 21, the fifth InP-type cladding layer 22 containing a p-type dopant, and the first InP-type cladding layer 23 which usually has a low doping concentration.
- a second InP cladding layer 25 having a low doping concentration and a fourth InPn type cladding layer 26 are arranged on the semiconductor core layer 24 .
- a positive voltage is applied to the electrode 28 with respect to the electrode 27, and the optical phase is modulated based on the electro-optic effect.
- the applied voltage range used in the operating state In the figure the fifth InP cladding layer 22 to the second InP cladding layer 25 all deplete, and the n-type third InPn-type cladding layer 21 and the fourth semiconductor cladding layer 26 are partially depleted. Depletion. Since the fifth InP cladding layer 22 is p-type, it functions as a potential barrier for electrons.
- an electric signal is input to the electrode 28 in a state where light is propagated in a direction perpendicular to the cross section of the mesa structure shown in FIG.
- the voltage is applied between the pad layer 21 and the second InP clad layer 25.
- an optical modulation waveguide section to which a voltage is applied from the electrode 28 and a connection waveguide are arranged on the optical input Z output side of the optical modulation waveguide section. It is necessary to electrically separate them.
- Example 5 In the semiconductor optoelectronic waveguide of Example 5, a part of the fourth InPn-type clad layer was surrounded by a high-resistance region or a pn junction in a portion indicated by reference numeral 29 by ion implantation. As a P-type region (electrical isolation region).
- the feature of the fifth embodiment is that a fifth p-type InP cladding layer 22 which serves as a potential barrier for electrons and is p-shaped is provided below.
- the purpose of this is to prevent the temperature distribution of the ionized receptor forming the potential barrier from being affected by crystal defects generated at the time of ion implantation. That is, when the noise is applied, the potential barrier shape is prevented from deteriorating and the junction leakage current is prevented from increasing.
- ion species to be ion-implanted into the electrical isolation region 29 atoms forming an acceptor in InP such as Be or a deep donor Z acceptor pair level are used. The atoms that form are used. If the electrical isolation region 29 becomes p-type, the electrical resistance of that part is about 30 times higher than that of the n-type layer with the same doping amount, even if it is not a high resistance layer. In addition, it is possible to prevent a decrease in modulation efficiency due to the propagation of the input electric signal to the electric isolation region 29. Of course, it is better to use a high-resistance layer, but it is possible to improve the function of electrical isolation simply by changing to n-type force and p-type.
- a part of the n-type InP cladding layer 126 is concavely etched. Since the electrical isolation region 129 was provided by the switching, a change in the light propagation mode occurred in the portion where the thickness of the cladding layer changed, and as a result, a light scattering loss occurred. On the other hand, in the structure of the fifth embodiment, the light scattering loss due to such a change in the light propagation mode does not occur. Further, in the conventional structure, the controllability of the fourth semiconductor cladding layer 126, which is relatively deep in etching, has been a problem. However, such a problem does not occur in the structure of the fifth embodiment.
- the structure of the fifth embodiment is to improve the problem of the conventional optoelectronic waveguide caused by the formation of the electrical isolation region, to increase the output of the optical modulator by reducing the optical loss, and In addition, it is possible to easily control the structure at the time of manufacturing the element.
- FIG. 4 is a perspective view for explaining Embodiment 6 of the semiconductor optoelectronic waveguide according to the present invention.
- reference numeral 31 denotes an n-type third semiconductor cladding layer
- 32 denotes a third semiconductor cladding layer.
- the fifth p-type semiconductor cladding layer disposed on the layer 31; 33, the first semiconductor cladding layer disposed on the fifth semiconductor cladding layer 32; and 34, disposed on the first semiconductor cladding layer 33.
- the semiconductor cladding layers 37, 38 are n-type electrodes, and 39 is an electrical isolation region formed by ion implantation and having a plurality of pn junction forces.
- the laminated structure other than the electrical isolation region 39 is the same as that of the fifth embodiment shown in FIG.
- the electrical isolation region 29 is provided at one location on each side of the fourth InPn-type cladding layer 26.
- the electrical isolation region 29 is formed by a large number of ion implantation regions. Are connected to form an electrical isolation region 39. Ion implantation partial force In the case of a 3 ⁇ 4-shaped layer, the pn junction is connected in series as the entire electrical isolation region, so the voltage applied to each pn junction is reduced and the leakage current in the electrical isolation region is reduced. Is done.
- FIG. 5 is a perspective view for explaining Embodiment 7 of the semiconductor optoelectronic waveguide according to the present invention.
- reference numeral 41 denotes an n-type third semiconductor cladding layer
- 42 denotes a p-type fifth semiconductor cladding layer disposed on the third semiconductor cladding layer 41
- 43 denotes a fifth semiconductor cladding layer 42.
- a first semiconductor cladding layer disposed on the first semiconductor cladding layer 43; a semiconductor core layer having an electro-optical effect disposed on the first semiconductor cladding layer 43; and a second semiconductor cladding layer 45 disposed on the semiconductor core layer 44.
- Body cladding layer, 46 is an n-type fourth semiconductor cladding layer disposed on the second semiconductor cladding layer 45, 47 and 48 are n-type electrodes, and 49 is an electrical isolation region formed by ion implantation.
- 50-1 is an electrode formed on the n-type fourth semiconductor cladding layer
- 50-2 is an electrode formed on the n-type fourth semiconductor cladding layer at the same potential as the third cladding layer. Indicates the wiring to be performed.
- the laminated structure other than the n-type electrode 50-1 and the wiring 50-2 is the same as that of the fifth embodiment shown in FIG.
- An n-type electrode 50-1 is formed on the fourth semiconductor cladding layer 46 at a portion opposing the optical modulation waveguide section with the electrical isolation region 49 interposed therebetween, and this is connected to the wiring 50-2. This makes the potential the same as that of the third semiconductor cladding layer 41. If the resistance of the electrical isolation region is not sufficiently high, the problem that the potential outside the electrical isolation region 49 increases and a bias voltage is applied to portions other than the main waveguide portion can be eliminated.
- the present invention is effective in stably realizing the characteristics of an optical modulator using a nin-type hetero structure having a characteristic of a low drive voltage, and reducing the input optical power. This can contribute to lower power consumption and lower cost of the optical modulator module.
- a semiconductor optoelectronic waveguide using InP and InAlGaAs as a semiconductor material has been described, but an optoelectronic waveguide structure using other IIIV group compound semiconductors including AlGaAs and InGaAsP is used. Can be similarly applied.
- the semiconductor optoelectronic waveguide of the fifth embodiment shown in FIG. 3 described above has a structure in which the cladding layers on both sides of the InPZlnGaAsP optical modulator are both n-type (so-called nin type structure).
- nin type structure In order to prevent electron current from flowing when a voltage is applied to the core layer 24, it is necessary to provide a barrier layer for electrons, and a p-type doping layer is introduced below the core layer 24 as the barrier layer.
- the semiconductor cladding layer 22 is inserted. P-type layers are formed on both sides of the n-type cladding layer 26 above the core layer 24, and these are used as electric separation layers 29.
- 21 is the third semiconductor of the n-type
- the body cladding layer, 23 is a first semiconductor cladding layer, 25 is a second semiconductor cladding layer, 29-1 is a connection waveguide region of the fourth semiconductor cladding layers 26 and 29, and 27 and 28 are electrodes.
- the force core layer 24 which has an excellent feature that the drive voltage can be reduced, has a small amount of light absorption, and the holes generated there are small. It has been found that there is a further problem to be solved, in which the charge accumulates in the power barrier layer 22 and, as a result, a barrier to electrons lowers, causing a phenomenon that a leak current occurs (parasitic phototransistor effect). In other words, in terms of transistor operation, when the base hole concentration increases while the base is open, the emitter-Z base junction is in a forward-biased state. Furthermore, since the voltage applied to the core layer 24 also decreases by the forward bias voltage, the modulation characteristics change depending on the light wavelength and the light intensity, and this results in an increase in the range of use as a modulator. It will be restricted.
- FIG. 6 is a perspective view for explaining Embodiment 8 of the semiconductor optoelectronic waveguide according to the present invention.
- reference numeral 61 denotes a third semiconductor cladding layer
- 62 denotes a surface on the third semiconductor cladding layer 61.
- 63 a semiconductor core layer disposed on the first semiconductor cladding layer 62; 64, a second semiconductor cladding layer disposed on the semiconductor core layer 63; A fifth semiconductor cladding layer disposed on the second semiconductor cladding layer 64, 66 a fourth semiconductor cladding layer disposed on the fifth semiconductor cladding layer 65, 66-1 a light modulation region, 66-2 denotes a separation region, 66-3 denotes a connection waveguide region, and 67 and 68 denote electrodes.
- the third semiconductor cladding layer 61 is an n-type third InPn-type cladding layer, and the first semiconductor cladding layer 62 is a low doping concentration.
- the first InGaAlAs cladding layer and the semiconductor core layer 63 which have a smaller band gap than InP, have a structure such that the electro-optic effect works effectively at the operating light wavelength and the light absorption is low enough to not cause a problem. This is a determined semiconductor core layer.
- a multiple quantum well structure in which the GaZAl composition of InGaAlAs is changed to a quantum well layer and a barrier layer, respectively.
- the second semiconductor cladding layer 64 is a low doping concentration and has a smaller band gap than InP.
- the second semiconductor cladding layer 64 is a second InGaAlAs cladding layer. Further, on this cladding layer 64, 65 p-type InP barrier layers ( (Fifth semiconductor cladding layer).
- the fourth InP cladding layer 66 is composed of three regions, the light modulation region 66-1 is composed of an n-type InP region, the separation region 66-2 is a p-type InP region, and the bottom surface is a p-type InP region. Contact barrier layer 65.
- the p-type InP region 66-2 is formed, for example, by removing a portion corresponding to the isolation region 66-2 by etching after the layers from the third semiconductor cladding layer 61 to the fourth semiconductor cladding layer 66 are grown. It can be formed by a force for regrowing p-type InP or by introducing a bexceptor into a part of the fourth semiconductor cladding layer 66 by an ion implantation method.
- the connection waveguide region 66-3 is InP of any conductivity type.
- the electrodes 67 and 68 are metal electrodes, and a voltage is applied to the core layer 63 with the other electrode 68 having a negative polarity with respect to the one electrode 67.
- the metal electrode 68 makes electrical contact with both the light modulation region 66-1 and the separation region 66-2.
- all the layers from the first semiconductor cladding layer 62 to the fifth semiconductor cladding layer 65 immediately below the optical modulation region are an n-type InP cladding layer 66-1 and a p-type InP barrier.
- the doping concentration is determined so as to maintain almost n-type neutrality except for a part of the depleted portion at the interface with the layer 65.
- an electric signal is input to the electrode 68 while light is propagated in a direction perpendicular to the cross section of the mesa structure shown in FIG.
- a voltage is applied between the third InPn-type cladding layer 61 and the light modulation region 66-1 which also has the n-type InP force.
- the InP barrier layer 65 is a p-type and functions as a potential barrier for electrons, the injection of electrons from the light modulation region 66-1 is suppressed, and the occurrence of leakage current is reduced.
- the voltage can be applied to modulate the optical phase based on the electro-optic effect.
- connection waveguide region 66-3 is arranged on an optical modulation region to which a voltage is applied and on the optical input Z output side of the optical modulation region. It is necessary to electrically separate them.
- the portion indicated by the isolation region 66-2 in FIG. 6 is selectively a p-type region (p-type InP region), which is an electrical isolation region.
- the introduction of the p-type InP region 66-2 electrically connected to the n-type InP cladding layer 66-1 has the following effect. That is, in the waveguide structure shown in FIG. 3, as described above, a parasitic phototransistor effect occurs due to holes generated by light absorption of the core layer 24. However, in the structure of this embodiment, depletion occurs. P-type InP region (isolation region) 66-2 than Noria layer 65 Since the force potential is low, the hole force flows into the 3 ⁇ 4-type InP region (isolation region) 66-2, and the accumulation of holes in the barrier layer 65 can be suppressed.
- FIG. 7 is a perspective view for explaining Embodiment 9 of the semiconductor optoelectronic waveguide according to the present invention.
- the p-type InP region 66-2 is arranged on both sides of the light modulation region 66-1, but when the waveguide becomes longer, holes generated by light absorption are removed by the p-type InP region. Region 66-2 cannot be effectively absorbed. To prevent this, a large number of 76-2 p-type InP regions may be arranged in the light modulation region as shown in FIG. 7 showing the structure of the ninth embodiment of the present invention.
- these regions 76-2 make electrical contact with the n-type InP region 76-1.
- the length of the p-type InP region 76-2 in the vertical direction is shortened, it is possible to keep the effect of hole absorption and to slightly suppress the increase in light absorption due to the introduction of the p-type layer. You. Further, since the electrode 78 is connected to each of the p-type InP regions 72-2 and these regions 72-2 have the same potential, these regions do not adversely affect the propagation of electric signals.
- reference numeral 71 denotes an n-type third semiconductor cladding layer
- 72 denotes a first semiconductor cladding layer disposed on the third semiconductor cladding layer 71
- 73 denotes a first semiconductor cladding layer 72.
- a semiconductor core layer having an electro-optical effect is disposed
- 74 is a second semiconductor cladding layer disposed on the semiconductor core layer 73
- 75 is a p-type cladding layer disposed on the second semiconductor cladding layer 74.
- a fifth semiconductor cladding layer, 76 is a fourth semiconductor cladding layer disposed on the fifth semiconductor cladding layer 75, 76-3 is a p-type region (isolation region) of the fourth semiconductor cladding layer, 76 -4 is a connection waveguide region of the fourth semiconductor cladding layer, and 77 is an n-type electrode.
- FIG. 8 is a perspective view for explaining Embodiment 10 of the semiconductor optoelectronic waveguide according to the present invention.
- reference numeral 81 denotes an n-type third semiconductor cladding layer
- 82 denotes a third semiconductor cladding layer.
- 86-1 is the n-type region (light modulation region) of the fourth semiconductor cladding layer
- 86-2 is the P-type region (isolation region) of the fourth semiconductor cladding layer
- 86-3 is the fourth region.
- 87, 88 are n-type electrodes
- 89 is an electrode formed in the connection waveguide portion of the fourth semiconductor cladding layer
- 90 is a connection waveguide of the fourth semiconductor cladding layer. This is a wiring in which the portion has the same potential as the third cladding layer.
- the semiconductor optoelectronic waveguide of the tenth embodiment has a fourth cladding layer (connection) opposite to the light modulation region 86-1 with the p-type InP region 86-2 functioning as an electrical isolation region therebetween.
- An electrode 89 is formed on each of the waveguides 86-3, and a wiring 90 is connected between the electrode 89 and the electrode 87 on the third semiconductor cladding layer 81, so that the potential of the connection waveguide region 86-3 is reduced.
- the third cladding layer 81 has the same potential as that of the third cladding layer 81.
- the conductivity type of the connection waveguide region described above may be P, n, or a depletion layer. In either case, a forward bias is applied to the light modulation region and a current does not flow.
- Embodiments 9 and 10 of the present invention are also effective to combine Embodiments 9 and 10 of the present invention described above.
- Examples 8, 9, and 10 of the present invention described above an example in which InP and InAlGaAs are used as materials is described.
- the present invention relates to a photovoltaic device using another IIIV group compound semiconductor including AlGaAs and InGaAsP.
- the embodiments of the present invention are not limited to the above-described ones, and may be replaced with materials and the like, changed in shape and number, may be simply compared with well-known parts and well-known techniques within the scope of the claims. Combinations and the like are included in the embodiments of the present invention.
- the method of integrating the semiconductor optoelectronic waveguide of the present invention with a semiconductor laser is technically the same as the well-known method of integrating an electric field absorption type optical modulator and a semiconductor laser. Needless to say.
- the present invention relates to a semiconductor optoelectronic waveguide having an electrical isolation region structure of an optoelectronic waveguide using a nin type hetero structure and used for an ultra-high speed optical modulator in a long wavelength band.
- Semiconductors that have a stable electrical isolation region structure that solves the problem of light loss and does not significantly affect optical mode propagation compared to the An optoelectronic waveguide can be provided.
- the semiconductor optoelectronic waveguide of the present invention can be used for an ultra-high-speed optical modulator in a long wavelength band, and can be expected to greatly contribute to high-speed optical network communication and the like.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04792011A EP1672410A4 (en) | 2003-10-03 | 2004-10-04 | PHOTO ELECTRON SEMICONDUCTOR WAVEGUIDE |
US10/574,513 US7599595B2 (en) | 2003-10-03 | 2004-10-04 | Semiconductor optoelectronic waveguide |
US12/219,061 US7787736B2 (en) | 2003-10-03 | 2008-07-15 | Semiconductor optoelectronic waveguide |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-346287 | 2003-10-03 | ||
JP2003346287A JP4105618B2 (ja) | 2003-10-03 | 2003-10-03 | 半導体光変調導波路 |
JP2003346285A JP2005116644A (ja) | 2003-10-03 | 2003-10-03 | 半導体光電子導波路 |
JP2003-346285 | 2003-10-03 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US10/574,513 A-371-Of-International US7599595B2 (en) | 2003-10-03 | 2004-10-04 | Semiconductor optoelectronic waveguide |
US12/219,061 Division US7787736B2 (en) | 2003-10-03 | 2008-07-15 | Semiconductor optoelectronic waveguide |
Publications (1)
Publication Number | Publication Date |
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WO2005033784A1 true WO2005033784A1 (ja) | 2005-04-14 |
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PCT/JP2004/014600 WO2005033784A1 (ja) | 2003-10-03 | 2004-10-04 | 半導体光電子導波路 |
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Country | Link |
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US (2) | US7599595B2 (ja) |
EP (2) | EP1672410A4 (ja) |
WO (1) | WO2005033784A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008107468A (ja) * | 2006-10-24 | 2008-05-08 | Ntt Electornics Corp | 半導体光変調器 |
CN116097156A (zh) * | 2020-08-13 | 2023-05-09 | 华为技术有限公司 | 用于膜调制器设备的设计和制造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5265929B2 (ja) | 2008-01-10 | 2013-08-14 | Nttエレクトロニクス株式会社 | 半導体光変調器及び光変調装置 |
JP5831165B2 (ja) * | 2011-11-21 | 2015-12-09 | 富士通株式会社 | 半導体光素子 |
WO2019106890A1 (ja) * | 2017-11-30 | 2019-06-06 | 三菱電機株式会社 | 半導体光変調器 |
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- 2004-10-04 US US10/574,513 patent/US7599595B2/en not_active Expired - Fee Related
- 2004-10-04 EP EP04792011A patent/EP1672410A4/en not_active Withdrawn
- 2004-10-04 EP EP08017012A patent/EP2000848B1/en not_active Not-in-force
- 2004-10-04 WO PCT/JP2004/014600 patent/WO2005033784A1/ja active Application Filing
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2008
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JP2008107468A (ja) * | 2006-10-24 | 2008-05-08 | Ntt Electornics Corp | 半導体光変調器 |
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US8031984B2 (en) | 2006-10-24 | 2011-10-04 | Ntt Electronics Corporation | Semiconductor optical modulator |
CN116097156A (zh) * | 2020-08-13 | 2023-05-09 | 华为技术有限公司 | 用于膜调制器设备的设计和制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080304786A1 (en) | 2008-12-11 |
EP1672410A8 (en) | 2006-11-22 |
EP1672410A4 (en) | 2008-02-20 |
EP1672410A1 (en) | 2006-06-21 |
US7599595B2 (en) | 2009-10-06 |
US7787736B2 (en) | 2010-08-31 |
US20070172184A1 (en) | 2007-07-26 |
EP2000848A2 (en) | 2008-12-10 |
EP2000848A3 (en) | 2009-06-24 |
EP2000848B1 (en) | 2012-12-12 |
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