WO2005031868A3 - Integrierte schaltung mit schutz vor elektrostatischer entladung - Google Patents

Integrierte schaltung mit schutz vor elektrostatischer entladung Download PDF

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Publication number
WO2005031868A3
WO2005031868A3 PCT/DE2004/002119 DE2004002119W WO2005031868A3 WO 2005031868 A3 WO2005031868 A3 WO 2005031868A3 DE 2004002119 W DE2004002119 W DE 2004002119W WO 2005031868 A3 WO2005031868 A3 WO 2005031868A3
Authority
WO
WIPO (PCT)
Prior art keywords
applying
connection
supply voltage
integrated circuit
electrostatic discharge
Prior art date
Application number
PCT/DE2004/002119
Other languages
English (en)
French (fr)
Other versions
WO2005031868A2 (de
Inventor
Michael Bernhard Sommer
Original Assignee
Infineon Technologies Ag
Michael Bernhard Sommer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Michael Bernhard Sommer filed Critical Infineon Technologies Ag
Priority to EP04786835A priority Critical patent/EP1665381A2/de
Publication of WO2005031868A2 publication Critical patent/WO2005031868A2/de
Publication of WO2005031868A3 publication Critical patent/WO2005031868A3/de
Priority to US11/389,509 priority patent/US20060238935A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Eine integrierte Schaltung mit Schutz vor elektrostatischer Entladung umfaßt einen Transistor (T), der mit einem der Drain- und Source-Anschlüsse (T1, T2) mit einem Anschluß (1) zum Anlegen eines ersten Versorgungspotentials (VDD) und mit einem anderen der Drain- und Source-Anschlüsse (T1, T2) mit einem Anschluß zum Anlegen eines zweiten Versorgungspotentials (VSS) verbunden ist. Eine erste Kapazität (C1) und eine zweite Kapazität (C2) sind als kapazitiver Spannungsteiler zwischen den Anschluß zum Anlegen des ersten Versorgungspotentials und den Anschluß zum Anlegen des zweiten Versorgungspotentials geschaltet. Der gemeinsame Koppelknoten (K3) der ersten und zweiten Kapazität ist mit dem Steueranschluß (T3) des Transistors verbunden. Im Entladungsfall ist der Transistor leitfähig und schließt damit eine Spannung, die nicht zum bestimmungsgemäßen Betrieb der Funktionseinheit geeignet ist, zwischen dem Anschluß (1) zum Anlegen des ersten Versorgungspotentials und dem Anschluß (2) zum Anlegen des zweiten Versorgungspotentials kurz.
PCT/DE2004/002119 2003-09-26 2004-09-23 Integrierte schaltung mit schutz vor elektrostatischer entladung WO2005031868A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04786835A EP1665381A2 (de) 2003-09-26 2004-09-23 Integrierte schaltung mit schutz vor elektrostatischer entladung
US11/389,509 US20060238935A1 (en) 2003-09-26 2006-03-27 Electrostatic discharge-protected integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10344849.7 2003-09-26
DE10344849A DE10344849B3 (de) 2003-09-26 2003-09-26 Integrierte Schaltung mit Schutz vor elektrostatischer Entladung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/389,509 Continuation US20060238935A1 (en) 2003-09-26 2006-03-27 Electrostatic discharge-protected integrated circuit

Publications (2)

Publication Number Publication Date
WO2005031868A2 WO2005031868A2 (de) 2005-04-07
WO2005031868A3 true WO2005031868A3 (de) 2005-10-06

Family

ID=34384309

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/002119 WO2005031868A2 (de) 2003-09-26 2004-09-23 Integrierte schaltung mit schutz vor elektrostatischer entladung

Country Status (5)

Country Link
US (1) US20060238935A1 (de)
EP (1) EP1665381A2 (de)
CN (1) CN1856879A (de)
DE (1) DE10344849B3 (de)
WO (1) WO2005031868A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021735A (ja) * 2006-07-11 2008-01-31 Sanyo Electric Co Ltd 静電破壊保護回路
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
RU174504U1 (ru) * 2017-02-17 2017-10-18 Акционерное общество "Научно-исследовательский институт молекулярной электроники" Схема защиты от разрядов статического электричества для интегральных микросхем структуры металл-окисел-полупроводник с двумя равнозначными выводами
CN107733026B (zh) * 2017-10-30 2020-06-05 Oppo广东移动通信有限公司 一种负压保护电路、usb充电电路及终端设备
CN111884490B (zh) * 2019-05-03 2022-07-08 台达电子工业股份有限公司 电力电路以及集成电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0905851A1 (de) * 1997-09-30 1999-03-31 STMicroelectronics S.r.l. Schutzschaltung für eine Impuls-Versorgungsleitung in einer integrierten Halbleitervorrichtung
US6392860B1 (en) * 1999-12-30 2002-05-21 Vanguard International Semiconductor Corp. Electrostatic discharge protection circuit with gate-modulated field-oxide device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
US6064093A (en) * 1996-03-29 2000-05-16 Citizen Watch Co., Ltd. Protection circuit with clamping feature for semiconductor device
US5717560A (en) * 1996-08-23 1998-02-10 Intel Corporation ESD protection device using static capacitance coupling between drain and gate
JP4054093B2 (ja) * 1997-10-09 2008-02-27 株式会社ルネサステクノロジ 半導体装置
US6249410B1 (en) * 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
DE19944488A1 (de) * 1999-09-16 2001-04-19 Infineon Technologies Ag ESD-Schutzanordnung für Signaleingänge und -ausgänge mit Überspannungstoleranz
US6482688B2 (en) * 2001-03-30 2002-11-19 Texas Instruments Incorporated Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0905851A1 (de) * 1997-09-30 1999-03-31 STMicroelectronics S.r.l. Schutzschaltung für eine Impuls-Versorgungsleitung in einer integrierten Halbleitervorrichtung
US6392860B1 (en) * 1999-12-30 2002-05-21 Vanguard International Semiconductor Corp. Electrostatic discharge protection circuit with gate-modulated field-oxide device

Also Published As

Publication number Publication date
EP1665381A2 (de) 2006-06-07
WO2005031868A2 (de) 2005-04-07
DE10344849B3 (de) 2005-07-21
US20060238935A1 (en) 2006-10-26
CN1856879A (zh) 2006-11-01

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