ATE319187T1 - Schutzvorrichtung gegen elektrostatische entladungen - Google Patents

Schutzvorrichtung gegen elektrostatische entladungen

Info

Publication number
ATE319187T1
ATE319187T1 AT03447134T AT03447134T ATE319187T1 AT E319187 T1 ATE319187 T1 AT E319187T1 AT 03447134 T AT03447134 T AT 03447134T AT 03447134 T AT03447134 T AT 03447134T AT E319187 T1 ATE319187 T1 AT E319187T1
Authority
AT
Austria
Prior art keywords
protective device
electrostatic discharge
device against
against electrostatic
resistors
Prior art date
Application number
AT03447134T
Other languages
English (en)
Inventor
Koen Reynders
Heyn Vincent De
Mahmud Zubeidat
Original Assignee
Imec Inter Uni Micro Electr
Ami Semiconductor Belgium Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr, Ami Semiconductor Belgium Bvba filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE319187T1 publication Critical patent/ATE319187T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)
AT03447134T 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische entladungen ATE319187T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03447134A EP1482554B1 (de) 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische Entladungen

Publications (1)

Publication Number Publication Date
ATE319187T1 true ATE319187T1 (de) 2006-03-15

Family

ID=33104245

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03447134T ATE319187T1 (de) 2003-05-28 2003-05-28 Schutzvorrichtung gegen elektrostatische entladungen

Country Status (4)

Country Link
US (1) US7405914B2 (de)
EP (1) EP1482554B1 (de)
AT (1) ATE319187T1 (de)
DE (1) DE60303790T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008004035A1 (en) * 2006-07-03 2008-01-10 Freescale Semiconductor, Inc. Electrostatic discharge protection apparatus and method therefor
US8686470B2 (en) * 2011-01-07 2014-04-01 Nxp, B.V. ESD protection circuit
US8441031B2 (en) 2011-01-28 2013-05-14 Nxp B.V. ESD protection device
US8766365B2 (en) * 2012-02-21 2014-07-01 Micron Technology, Inc. Circuit-protection devices
US9640988B2 (en) 2014-12-12 2017-05-02 Globalfoundries Inc. Comparative ESD power clamp
US10163893B1 (en) 2017-08-28 2018-12-25 Micron Technologies, Inc. Apparatus containing circuit-protection devices
US10431577B2 (en) 2017-12-29 2019-10-01 Micron Technology, Inc. Methods of forming circuit-protection devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE298715C (de)
GB1393748A (en) * 1972-06-28 1975-05-14 Ind Instr Ltd Voltage regulating circuits
DD298715A5 (de) * 1989-07-03 1992-03-05 Technische Hochschule Ilmenau,De Gategesteuertes mos-bipolar-leistungsbauelement
US5359211A (en) * 1991-07-18 1994-10-25 Harris Corporation High voltage protection using SCRs
GB2283622B (en) * 1993-11-03 1998-01-14 Plessey Semiconductors Ltd Overvoltage protection circuit
US5969923A (en) * 1997-07-15 1999-10-19 Sarnoff Corporation Electrostatic protection structure for MOS circuits
TW428253B (en) * 1998-04-20 2001-04-01 United Microelectronics Corp Buried channel vertical doubly-diffused metal oxide semiconductor device
FR2795557B1 (fr) * 1999-06-28 2001-09-21 St Microelectronics Sa Dispositif d'ajustement des circuits apres mise en boitier et procede de fabrication correspondant
US6577481B2 (en) * 2000-11-07 2003-06-10 Texas Instruments Incorporated Cascoded NPN electrostatic discharge protection circuit

Also Published As

Publication number Publication date
US7405914B2 (en) 2008-07-29
EP1482554A1 (de) 2004-12-01
DE60303790D1 (de) 2006-04-27
DE60303790T2 (de) 2006-11-30
US20050002141A1 (en) 2005-01-06
EP1482554B1 (de) 2006-03-01

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Legal Events

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