WO2005024962A3 - Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung - Google Patents

Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung Download PDF

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Publication number
WO2005024962A3
WO2005024962A3 PCT/DE2004/001854 DE2004001854W WO2005024962A3 WO 2005024962 A3 WO2005024962 A3 WO 2005024962A3 DE 2004001854 W DE2004001854 W DE 2004001854W WO 2005024962 A3 WO2005024962 A3 WO 2005024962A3
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WO
WIPO (PCT)
Prior art keywords
layer
sequence
structured
carrier element
thin
Prior art date
Application number
PCT/DE2004/001854
Other languages
English (en)
French (fr)
Other versions
WO2005024962A2 (de
Inventor
Johannes Baur
Berthold Hahn
Volker Haerle
Original Assignee
Osram Opto Semiconductors Gmbh
Johannes Baur
Berthold Hahn
Volker Haerle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Johannes Baur, Berthold Hahn, Volker Haerle filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2006524216A priority Critical patent/JP2007504640A/ja
Priority to US10/567,935 priority patent/US20060237734A1/en
Priority to EP04762694A priority patent/EP1658644A2/de
Publication of WO2005024962A2 publication Critical patent/WO2005024962A2/de
Publication of WO2005024962A3 publication Critical patent/WO2005024962A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Es wird ein Dünnschicht-Leuchtdiodenchip (5) mit einer auf einem Trägerelement (2) angeordneten Epitaxieschichtenfolge (6), die eine elektromagnetische Strahlung erzeugende aktive Zone (8) aufweist, und einer an einer zu dem Trägerelement (2) hin gewandten Hauptfläche der Epitaxieschichtenfolge (6) angeordneten reflektierenden Schicht (3), die zumindest einen Teil der in der Epitaxieschichtenfolge (6) erzeugten elektromagnetischen Strahlung in diese zurückreflektiert, beansprucht, bei dem auf einer vom Trägerelement (2) abgewandten Strahlungsauskoppelfläche (7) der Epitaxieschichtenfolge (6) eine strukturierte Schicht (1) angeordnet ist, die ein Glasmaterial enthält und eine Strukturierung aufweist, die nebeneinanderliegende, sich in Richtung von der Strahlungsauskoppelfläche (7) weg verjüngende Vorsprünge (5) umfaßt, die ein laterales Rastermaß kleiner als eine Wellenlänge einer aus der Epitaxieschichtenfolge (6) emittierten elektromagnetischen Strahlung aufweisen. Die strukturierte Schicht (1) wird vorteilhaft als Spin-on-Glas aufgebracht und durch Grautonlithographie strukturiert.
PCT/DE2004/001854 2003-08-29 2004-08-19 Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung WO2005024962A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006524216A JP2007504640A (ja) 2003-08-29 2004-08-19 薄膜発光ダイオードおよびその製造方法
US10/567,935 US20060237734A1 (en) 2003-08-29 2004-08-19 Thin-layer light-emitting diode chip and method for the production thereof
EP04762694A EP1658644A2 (de) 2003-08-29 2004-08-19 Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10340271.3A DE10340271B4 (de) 2003-08-29 2003-08-29 Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
DE10340271.3 2003-08-29

Publications (2)

Publication Number Publication Date
WO2005024962A2 WO2005024962A2 (de) 2005-03-17
WO2005024962A3 true WO2005024962A3 (de) 2005-06-16

Family

ID=34258319

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001854 WO2005024962A2 (de) 2003-08-29 2004-08-19 Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung

Country Status (8)

Country Link
US (1) US20060237734A1 (de)
EP (1) EP1658644A2 (de)
JP (1) JP2007504640A (de)
KR (1) KR20060135599A (de)
CN (1) CN1846316A (de)
DE (1) DE10340271B4 (de)
TW (1) TWI243491B (de)
WO (1) WO2005024962A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI433343B (zh) * 2004-06-22 2014-04-01 Verticle Inc 具有改良光輸出的垂直構造半導體裝置
DE102005048408B4 (de) * 2005-06-10 2015-03-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterkörper
DE112006001835T5 (de) * 2005-07-11 2008-05-15 GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View Laserabgehobene LED mit verbesserter Lichtausbeute
WO2007031929A1 (en) * 2005-09-16 2007-03-22 Koninklijke Philips Electronics N.V. Method for manufacturing led wafer with light extracting layer
EP1962350A1 (de) * 2007-02-22 2008-08-27 LEXEDIS Lighting GmbH Emittierende Oberfläche von Leuchtdioden-Paketen
KR100886359B1 (ko) * 2007-03-19 2009-03-03 전남대학교산학협력단 마이크로 렌즈가 구비된 발광 다이오드
DE102007018837A1 (de) * 2007-03-26 2008-10-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
KR100921466B1 (ko) * 2007-08-30 2009-10-13 엘지전자 주식회사 질화물계 발광 소자 및 그 제조방법
DE102008050538B4 (de) * 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US20100132404A1 (en) * 2008-12-03 2010-06-03 Progressive Cooling Solutions, Inc. Bonds and method for forming bonds for a two-phase cooling apparatus
DE102008062932A1 (de) 2008-12-23 2010-06-24 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN101562224B (zh) * 2009-05-05 2011-10-05 深圳华映显示科技有限公司 一种光源装置及其制造方法
KR101101858B1 (ko) * 2010-05-27 2012-01-05 고려대학교 산학협력단 반도체 발광소자 및 그 제조방법
DE102018107615A1 (de) * 2017-09-06 2019-03-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

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WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
EP1271665A2 (de) * 2001-06-25 2003-01-02 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung
EP1324399A2 (de) * 2001-12-28 2003-07-02 Kabushiki Kaisha Toshiba Lichtemittierende Vorrichtung und Herstellungsverfahren
EP1329961A2 (de) * 2002-01-18 2003-07-23 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

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US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5324550A (en) * 1992-08-12 1994-06-28 Hitachi, Ltd. Pattern forming method
JP3316062B2 (ja) * 1993-12-09 2002-08-19 株式会社東芝 半導体発光素子
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
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Publication number Priority date Publication date Assignee Title
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
EP1271665A2 (de) * 2001-06-25 2003-01-02 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung
EP1324399A2 (de) * 2001-12-28 2003-07-02 Kabushiki Kaisha Toshiba Lichtemittierende Vorrichtung und Herstellungsverfahren
EP1329961A2 (de) * 2002-01-18 2003-07-23 Kabushiki Kaisha Toshiba Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

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Also Published As

Publication number Publication date
EP1658644A2 (de) 2006-05-24
TW200511616A (en) 2005-03-16
KR20060135599A (ko) 2006-12-29
TWI243491B (en) 2005-11-11
WO2005024962A2 (de) 2005-03-17
JP2007504640A (ja) 2007-03-01
DE10340271A1 (de) 2005-04-14
CN1846316A (zh) 2006-10-11
DE10340271B4 (de) 2019-01-17
US20060237734A1 (en) 2006-10-26

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