WO2005012451A2 - Slurries and methods for chemical-mechanical planarization of copper - Google Patents

Slurries and methods for chemical-mechanical planarization of copper Download PDF

Info

Publication number
WO2005012451A2
WO2005012451A2 PCT/US2004/024143 US2004024143W WO2005012451A2 WO 2005012451 A2 WO2005012451 A2 WO 2005012451A2 US 2004024143 W US2004024143 W US 2004024143W WO 2005012451 A2 WO2005012451 A2 WO 2005012451A2
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
salt
copper
polishing
oxidizing agent
Prior art date
Application number
PCT/US2004/024143
Other languages
English (en)
French (fr)
Other versions
WO2005012451A3 (en
Inventor
S. V. Babu
Sharath Hegde
Sunil Jha
Udaya B. Patri
Youngki Hong
Original Assignee
Climax Engineered Materials, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,698 external-priority patent/US20050022456A1/en
Application filed by Climax Engineered Materials, Llc filed Critical Climax Engineered Materials, Llc
Priority to EP04779276A priority Critical patent/EP1648974A4/en
Priority to JP2006521994A priority patent/JP2007500943A/ja
Publication of WO2005012451A2 publication Critical patent/WO2005012451A2/en
Publication of WO2005012451A3 publication Critical patent/WO2005012451A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
PCT/US2004/024143 2003-07-30 2004-07-27 Slurries and methods for chemical-mechanical planarization of copper WO2005012451A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04779276A EP1648974A4 (en) 2003-07-30 2004-07-27 AQUEOUS SUSPENSIONS AND METHODS FOR THE CHEMICAL MECHANICAL PLANARIZATION OF COPPER
JP2006521994A JP2007500943A (ja) 2003-07-30 2004-07-27 銅を化学的機械的に平滑化するためのスラリーおよび方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/631,698 US20050022456A1 (en) 2003-07-30 2003-07-30 Polishing slurry and method for chemical-mechanical polishing of copper
US10/631,698 2003-07-30
US10/846,718 2004-05-13
US10/846,718 US20050026444A1 (en) 2003-07-30 2004-05-13 Slurry and method for chemical-mechanical planarization of copper

Publications (2)

Publication Number Publication Date
WO2005012451A2 true WO2005012451A2 (en) 2005-02-10
WO2005012451A3 WO2005012451A3 (en) 2006-05-18

Family

ID=34119220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/024143 WO2005012451A2 (en) 2003-07-30 2004-07-27 Slurries and methods for chemical-mechanical planarization of copper

Country Status (4)

Country Link
EP (1) EP1648974A4 (es)
JP (1) JP2007500943A (es)
KR (1) KR20060118396A (es)
WO (1) WO2005012451A2 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1856229A2 (en) * 2005-01-11 2007-11-21 Climax Engineered Materials, LLC Polishing slurries and methods for chemical mechanical polishing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330321A (ja) * 1986-07-19 1988-02-09 Tokyo Tungsten Co Ltd 二酸化モリブデン粉末及びその製造方法
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US6290735B1 (en) * 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US6142855A (en) * 1997-10-31 2000-11-07 Canon Kabushiki Kaisha Polishing apparatus and polishing method
JP2000158331A (ja) * 1997-12-10 2000-06-13 Canon Inc 基板の精密研磨方法および装置
JPH11204474A (ja) * 1998-01-09 1999-07-30 Sony Corp フッ素を含む膜の研磨方法
JP2000108004A (ja) * 1998-10-07 2000-04-18 Canon Inc 研磨装置
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2003510802A (ja) * 1999-09-23 2003-03-18 ロデール ホールディングス インコーポレイテッド 銅又はタングステンの研磨用スラリー溶液
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
WO2001032799A1 (en) * 1999-11-04 2001-05-10 Nanogram Corporation Particle dispersions
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP3945964B2 (ja) * 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6569222B2 (en) * 2000-06-09 2003-05-27 Harper International Corporation Continuous single stage process for the production of molybdenum metal
JP4743941B2 (ja) * 2000-06-30 2011-08-10 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP2002184734A (ja) * 2000-12-19 2002-06-28 Tokuyama Corp 半導体装置の製造方法
JP3507794B2 (ja) * 2000-12-25 2004-03-15 日本電気株式会社 半導体装置の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
None
See also references of EP1648974A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1856229A2 (en) * 2005-01-11 2007-11-21 Climax Engineered Materials, LLC Polishing slurries and methods for chemical mechanical polishing
EP1856229A4 (en) * 2005-01-11 2009-11-18 Climax Engineered Mat Llc POLISHING AGENT AND METHOD FOR CHEMICAL-MECHANICAL POLISHING

Also Published As

Publication number Publication date
KR20060118396A (ko) 2006-11-23
EP1648974A2 (en) 2006-04-26
WO2005012451A3 (en) 2006-05-18
EP1648974A4 (en) 2008-04-23
JP2007500943A (ja) 2007-01-18

Similar Documents

Publication Publication Date Title
US7186653B2 (en) Polishing slurries and methods for chemical mechanical polishing
US20080277378A1 (en) Method for Chemical-Mechanical Planarization of Copper
JP5539934B2 (ja) 銅基材に有益な化学機械的研磨スラリー
EP1190006B1 (en) Slurry composition and method of chemical mechanical polishing using same
TWI421317B (zh) 拋光液及化學機械拋光（ｃｍｐ）方法
JP2002075927A (ja) 研磨用組成物およびそれを用いた研磨方法
JP2000160139A (ja) 研磨用組成物およびそれを用いた研磨方法
KR102275303B1 (ko) 상승된 온도 cmp 조성물 및 이의 사용 방법
EP1648974A2 (en) Slurries and methods for chemical-mechanical planarization of copper
EP4038155A1 (en) Low dishing copper chemical mechanical planarization
TW202342660A (zh) 研磨劑、２液式研磨劑及研磨方法
JP2022046055A (ja) 半導体基板処理方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200480021645.8

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004779276

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067000223

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2006521994

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2004779276

Country of ref document: EP