Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
  • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
  • H01L21/4807—Ceramic parts
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B28—WORKING CEMENT, CLAY, OR STONE
  • B28D—WORKING STONE OR STONE-LIKE MATERIALS
  • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
  • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
  • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B28—WORKING CEMENT, CLAY, OR STONE
  • B28D—WORKING STONE OR STONE-LIKE MATERIALS
  • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
  • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
  • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
  • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
  • H01L21/481—Insulating layers on insulating parts, with or without metallisation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/12—Mountings, e.g. non-detachable insulating substrates
  • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
  • H01L23/142—Metallic substrates having insulating layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
  • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
  • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
  • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/0011—Working of insulating substrates or insulating layers
  • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
  • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/36—Electric or electronic devices
  • B23K2101/40—Semiconductor devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
  • H01L2924/097—Glass-ceramics, e.g. devitrified glass
  • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/03—Use of materials for the substrate
  • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
  • H05K2201/03—Conductive materials
  • H05K2201/0332—Structure of the conductor
  • H05K2201/0335—Layered conductors or foils
  • H05K2201/0355—Metal foils
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/08—Treatments involving gases
  • H05K2203/081—Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
  • H05K2203/102—Using microwaves, e.g. for curing ink patterns or adhesive
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
  • H05K2203/107—Using laser light
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
  • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
  • H05K2203/1121—Cooling, e.g. specific areas of a PCB being cooled during reflow soldering
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
  • H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending

Definitions

• the invention relates to a method according to the preamble of claim 1.
• This DCB method then has e.g. following process steps:
• the so-called active soldering method is also known (DE 22 1 3 1 15; EP-A-153 618), especially also for the production of metal-ceramic substrates.
• a connection between a metal foil, for example copper foil, and a ceramic substrate, for example aluminum nitride ceramic is produced at a temperature between approximately 800-1000 ° C. using a hard solder, which in addition to a main component such as copper, silver and / or gold also contains an active metal.
• This active metal which is, for example, at least one element from the group Hf, Ti, Zr, Nb, Cr, establishes a connection between the solder and the ceramic by chemical reaction, while the connection between the solder and the metal is a metallic braze connection ,
• Mo-Mn method or Mo-Mn-Ni method
• a paste of Mo-Mn is applied to a ceramic layer and then baked into the ceramic to form a metal layer, which then forms the basis for soldering a metallization.
• the metal layer is preferably nickel-plated before soldering.
• W process in which a tungsten-containing paste is applied and baked to form the metallization or the basis for the subsequent soldering.
• LTCC process Low Temperature Cofired Ceramic
• a green, i.e. not yet fired ceramic applied a paste containing a conductive metal and is fired into the ceramic during firing. It is also known here in particular to arrange a plurality of layers of the green ceramic provided with the paste on top of one another and then to burn them.
• Metal-ceramic substrates in the form of a multiple substrate, in which, on a common, for example large-area ceramic plate or - Layer metallizations (metal areas) are provided, which are each assigned to individual substrates or form the metallizations of individual substrates. Grooves which form predetermined breaking lines, for example by laser, are then introduced into the ceramic layer, so that the multiple substrate can be separated into the individual substrates along these predetermined breaking lines by mechanical breaking.
• a certain disadvantage here is that material which evaporates when the grooves forming the predetermined breaking lines are formed is deposited on the substrate again, and so on. contamination of the multiple substrate, in particular also of the metal areas, occurs, which can have a disruptive effect during further processing.
• the object of the invention is to demonstrate a method which avoids this disadvantage. To achieve this object, a method is designed according to claim 1.
• FIG. 2 shows a very simplified basic illustration of an arrangement for carrying out the thermal treatment in the method according to the invention
• Figure 3 is an enlarged view of the work area when performing the thermal treatment of the inventive method
• Figure 4 is a perspective view of the respective work area at
• FIGS. 5-7 in schematic representations different methods for mechanically breaking the multiple substrate into individual substrates along the respective separation or predetermined breaking line.
• 1 is a metal-ceramic multiple substrate which is produced by providing a large-format ceramic plate or a large-format ceramic layer 2 with a structured metallization on its two surface sides, in such a way that this metallization on both surface sides of the Ceramic layer 2 forms a plurality of metal areas 3 and 4, respectively.
• a metal area 4 on the underside of the ceramic layer 2 is opposite a metal area 3 on the top of the ceramic layer 2.
• Each metal region 3 defines an individual substrate 5 with the associated metal region 4.
• These individual substrates adjoin one another via separating or predetermined breaking lines 6 and 7 formed in the ceramic layer 2.
• the dividing or breaking lines 6 and 7 are introduced in the illustrated embodiment so that the dividing or breaking lines 6 run parallel to the narrow sides 2.1 of the rectangular ceramic layer 2 and the dividing line 7 parallel to the two long sides 2.2 of the ceramic layer 2.
• the metal areas 3 and 4 are each from the edge of the Ceramic layer 2 and also spaced from the dividing and predetermined breaking lines 6 and 7.
• the individual substrates 5 serve, for example, as printed circuit boards for electrical circuits or modules, at least the metallizations 3 are in turn structured into conductor tracks, contact areas, etc.
• the ceramic layer 2 is, for example, one made of aluminum oxide (Al 2 0 3 ) or aluminum nitride (AIN).
• Al 2 0 3 aluminum oxide
• AIN aluminum nitride
• Other ceramics such as Si 3 N 4 , SiC, BeO, Ti0 2 , Zr0 2 or Al 2 , 0 3 with a proportion of Zr0 2 , for example in the range from 5 to 30 percent by weight, as well as mullite (3AI 2 0 3 x 2 silicon oxide) are conceivable.
• the metallizations 3 and 4 are applied to the ceramic layer 2, for example by a high-temperature process, for example in the form of a metal or copper foil using the direct bonding process (if using a copper foil using the DCB process) or by active soldering. In a subsequent process step, these metallizations are then structured into the individual metal regions 3 and 4, for example by masking and etching.
• the metal regions 3 and 4 can also be applied individually, for example in the form of film cuts, to the surface sides of the ceramic layer 2 with the aid of the high-temperature processes specified above. There is also the possibility of producing the metal regions 3 and / or 4 using thick film technology, ie by applying and baking an appropriate electrically conductive paste, etc.
• a special feature of the method according to the invention is the introduction of the separation or predetermined breaking lines 6 and 7 into the ceramic layer 2. This special method step, which is also referred to as thermal treatment, is shown in FIGS.
• the Ceramic layer 2, where the respective separation or predetermined breaking line 6 or 7 is desired is in each case progressively heated in a patial and linear manner and then cooled in a shock-like manner so that mechanical stresses along the entire processing line or separation and predetermined breaking line within the ceramic layer, that arise during heating and subsequent cooling, a targeted weakening of material or crack formation takes place between the top and the bottom of the ceramic layer 2, as indicated at 8 in FIG.
• the partial heating along the respectively generating dividing line or predetermined breaking line 6 or 7 takes place using a laser beam 9 of a laser 10.
• the multiple substrate 1 is flat and with its surface sides lying in horizontal planes on a clamping surface Clamping bracket 1 1 held, with negative pressure on its underside.
• the laser beam 9 is focused on the top of the multiple substrate or the ceramic layer 2 by the optics of the laser 10, in the embodiment shown such that the focus 9.1 there has an oval cross-section, the larger cross-sectional axis in the machining direction A, ie in the direction the dividing and breaking lines 6 and 7 to be produced is oriented.
• the focus 9.1 or the instantaneous working area formed by this focus is narrow across the machining direction A, and is sufficiently large in the machining direction so that the relative movement between the laser beam 9 and the multiple substrate 1 has sufficient time for sufficient heating of the ceramic layer 2.
• the relative movement between the laser beam 9 and the multiple substrate 1 in the machining direction is achieved, for example, by a corresponding movement of the clamping bracket 11.
• the energy of the laser beam 9 is set taking into account various parameters, such as in particular the thickness of the ceramic layer 2, the type of material used for this ceramic layer and the speed at which the relative movement between the laser beam 9 and the multiple substrate 1 takes place in the machining direction A, etc., that the ceramic is optimally heated for the intended purpose, but there is no burning or evaporation, in particular no or at least no noticeable change in the surface of the ceramic layer 2.
• the heating of the multiple substrate 1 or the ceramic layer 2 along the separation or predetermined breaking lines 6 and 7 can also be carried out using other techniques, for example using a hot gas jet, a flame or a plasma or by applying microwave energy to the ceramic layer 2.
• the ceramic layer 2 is subjected to a beam 12 of cooling medium for cooling, in such a way that cracking 8 occurs as a result of this shock-like cooling.
• a suitable cooling medium is, for example, cooled air or a cooled gas which emerges from a nozzle 13 arranged above the ceramic layer 2 and directed onto it.
• Suitable cooling media include gases or gas mixtures (for example C0 2 ) which are fed under pressure to the nozzle 1 3 and are expanded at this nozzle cooling down.
• gases or gas mixtures for example C0 2
• suitable for cooling are, inter alia, different liquids, such as water, but also liquid-gas and / or air mixtures, for example in the form of an aerosol.
• the distance x as well as the type and amount of the cooling medium are in turn taking various parameters into account, e.g. Feed or processing speed, applied with the laser beam 9 and stored in the ceramic layer 2, thermal energy, thickness and type of ceramic, type of cooling medium, etc., so that the desired cracking 8 results.
• the thickness of the ceramic layer 2 in the embodiment shown is in the range between 0.1-3 mm.
• the thickness of the metal areas 3 and 4 is i.a. depending on how these metal areas are created and ranges between 0.002 and 0.6 mm.
• the thickness of the metal regions is, for example, 0.1-0.6 mm.
• the distance between the metal regions 3 and 4 on each surface side of the ceramic layer is of the order of about 0.1-3 mm, so that this metal region 3 or 4 is approximately 0.05-1.5 mm from the respective dividing line or predetermined breaking line 6 or 7 is spaced.
• the separation and predetermined breaking lines 6 and 7 have been introduced into the ceramic layer 2, there are various possibilities for further processing or processing of the multiple substrate 1. It is then possible, for example, to divide this multiple substrate 1 on the metal areas 3 to form conductor tracks, contact areas, etc. to be structured further using the usual techniques, if this has not already been done, and / or the metallizations 3 and 4 on the surfaces with an additional one To provide a metal layer, for example nickel-plating, and to equip the multiple substrate 1 or the structured metal regions 3 there with electrical components. Subsequently, the multiple substrate 1 is then cut into the individual substrates 5 already equipped with the components, ie into the circuits formed by them, by mechanical breaking along the separation or predetermined breaking lines 6 and 7.
• FIG. 5 shows a possibility for separating the multiple substrate into the individual substrates 5 by breaking.
• the multiple substrate 1 is supported on the corresponding dividing or predetermined breaking line 6 or 7 with a force P on a surface side, for example on the underside, while on both sides and at a distance from the dividing or predetermined breaking line 6 or 7 on the top of the Multiple substrates 1 are each acted on with a force Vi P, so that due to the bending load exerted on the ceramic layer, proper separation takes place along the respective separation or predetermined breaking line 6 or 7.
• FIG. 6 shows a further possibility of breaking the multiple substrate 1 into the individual substrates 5.
• the multiple substrate 1 is clamped on one side between the clamps 14 and 15 of a holder 16 along the respective separation and predetermined breaking lines 6 and 7, with a distance of the relevant dividing line or predetermined breaking line, so that the metal areas 3 and 4 between the terminals 14 and 15 are added.
• the force P exerted on the multiple substrate so that it breaks again along the parting line or predetermined breaking line.
• FIG. 7 shows a further, particularly rational possibility of separating the multiple substrate 1 into the individual substrates 5 by breaking.
• the multiple substrate 1 is fixed with its underside or with the metal areas 4 there on a self-adhesive film 18, for example on a so-called blue foil, as is also used in semiconductor production.
• the multiple substrate is then separated on this film 18 by breaking into the individual substrates 5.
• the film 18 is stretched (position b).

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Mechanical Engineering (AREA)
• Mining & Mineral Resources (AREA)
• Materials Engineering (AREA)
• Processing Of Stones Or Stones Resemblance Materials (AREA)
• Laser Beam Processing (AREA)
• Manufacturing Of Printed Wiring (AREA)
• Laminated Bodies (AREA)
• Chemically Coating (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (2)

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Family Applications (1)

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Cited By (4)

Families Citing this family (16)

Citations (7)

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• 2003
  • 2003-06-16 DE DE10327360A patent/DE10327360B4/de not_active Expired - Fee Related
• 2004
  • 2004-05-14 WO PCT/DE2004/001012 patent/WO2004113041A2/de not_active Ceased
  • 2004-05-14 US US10/560,525 patent/US20060183298A1/en not_active Abandoned
  • 2004-05-14 EP EP04732932A patent/EP1634326A2/de not_active Withdrawn
  • 2004-05-14 JP JP2006515661A patent/JP5047615B2/ja not_active Expired - Fee Related

Patent Citations (7)

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