WO2004110957A1 - 窒化アルミニウム接合体及びその製造方法 - Google Patents
窒化アルミニウム接合体及びその製造方法 Download PDFInfo
- Publication number
- WO2004110957A1 WO2004110957A1 PCT/JP2004/008584 JP2004008584W WO2004110957A1 WO 2004110957 A1 WO2004110957 A1 WO 2004110957A1 JP 2004008584 W JP2004008584 W JP 2004008584W WO 2004110957 A1 WO2004110957 A1 WO 2004110957A1
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- WO
- WIPO (PCT)
- Prior art keywords
- aluminum nitride
- conjugate
- metal layer
- plate
- interface
- Prior art date
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 50
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 101100215777 Schizosaccharomyces pombe (strain 972 / ATCC 24843) ain1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241000219977 Vigna Species 0.000 description 1
- 235000010726 Vigna sinensis Nutrition 0.000 description 1
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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Definitions
- the present invention relates to an aluminum nitride bonded body useful as a plate heater and an electrostatic chuck for mounting and processing a semiconductor wafer in a semiconductor manufacturing apparatus. Specifically, it has a joint structure in which two aluminum nitride sintered plates are joined with a metal layer interposed therebetween, and in particular, it is possible to uniformly process semiconductor wafers and has good durability.
- Aluminum nitride bonded article
- a ceramic plate having a metal layer acting as a heater or an electrode embedded therein is used as a table on which the semiconductor wafer is mounted.
- a sintered body is used.
- heaters with embedded metal layers are used as plate heaters, and those with embedded electrodes are used as electrostatic chucks.
- a metal layer that functions as a heater together with an electrode may be embedded.
- the plate-shaped sintered body of aluminum nitride obtained by this method is a bonded body in which two aluminum nitride sintered plates are bonded with a metal layer interposed therebetween, and the dimensional change during sintering causes The above problem has been effectively avoided.
- an adhesive is used for bonding two sintered body plates.
- conventionally used plate adhesives have a problem that the bonding temperature is high and the sintered body plate is deformed by heating at the time of joining, and the metal layer is warped accordingly.
- Patent Document 1 a method of improving warpage by using an adhesive whose bonding temperature has been lowered has been proposed.
- the warpage of the metal layer in the joined body can be improved to some extent, but there is room for improvement.
- the bonding strength at the part where the aluminum nitride sintered plates directly face each other increases over time due to the thermal history. There was a problem of lowering.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2000-2005-2005 Disclosure of the Invention
- an object of the present invention is to provide an aluminum nitride joined body in which two aluminum nitride sintered plates are joined with a metal layer interposed therebetween, in which the warpage of the internal metal layer is extremely low and high joining is achieved.
- the purpose is to obtain a joined body having strength.
- the present inventors have intensively studied to solve the above problems.
- the joint of the aluminum nitride sintered body plate is heated in two stages under a specific temperature control while applying a specific pressure, thereby having a high bonding strength without using an adhesive and having a high internal strength.
- To obtain an aluminum nitride joined body in which the warpage of the metal layer is extremely low succeeded in.
- finely sized pores derived from such a method were characteristically left at the joining interface of the aluminum nitride sintered body.
- the present invention has been completed. That is, according to the present invention, in an aluminum nitride joined body composed of two aluminum nitride sintered bodies joined together without using an adhesive and a metal layer formed at a part of the joint interface,
- Non-bonding rate Q ( ⁇ ) X 1 00-(1)
- X is a length of the non-bonded portion in a bonding interface direction represented by a total value of a length L of the vacancy present in the direct bonding region
- Y is the length of the direct bonding region where the vacancy exists, and the non-bonding rate Q calculated by the following equation is in the range of 0.1 to 0.5% on average.
- An aluminum nitride bonded body (hereinafter, also referred to as an AIN plate-shaped bonded body) is provided.
- a method for manufacturing an aluminum nitride joined body characterized by comprising:
- the AIN plate-like joined body of the present invention is characterized in that, due to the characteristic joint interface structure formed based on the specific joining method described above, the warpage of the metal layer is suppressed to a small value.
- a uniform electric field can be formed anywhere on the metal layer, such as when an electric field is formed in a dielectric by applying a voltage to the layer.
- the AIN plate-like joined body of the present invention is extremely effectively used as an electrostatic chuck and a plate heater used in a semiconductor manufacturing apparatus.
- FIG. 1 is a partially broken perspective view showing a typical embodiment of the AIN plate-like joined body of the present invention.
- FIG. 2 is a diagram showing a main part of a side cross section passing through the center O of the AIN plate-like joined body of FIG.
- FIG. 3 is a conceptual diagram for explaining the warpage of the metal layer generated in the AIN plate-like joined body.
- the AIN plate-like joined body of the present invention has a joint structure in which two aluminum nitride sintered plates 11 a and 11 b are joined without using an adhesive.
- the metal layer 2 exists at a part of the bonding interface P (see FIG. 2).
- a through hole is formed in the sintered body plate 11a or 11b, and the inside of the through hole is filled with a conductive paste or the like, so that the metal layer 2 can be energized. It has such a structure.
- the planar shape of the AIN plate-like joined body is usually a rectangular shape such as a circle or a square, and the metal layer 2 is a circuit pattern of an electrode, a heater, etc. in an application of a heater / plate / electrostatic chuck. Form In some cases, as shown in Fig. 1, it may exist simply in a solid pattern, and in other cases it may exist in a linear pattern.
- the metal layer 2 is made of, but not limited to, tungsten, molybdenum, platinum, titanium, copper, etc., and has a thickness of 20 or less, especially 5 to 15 m. It is better to be in the range. Further, the ratio of the metal layer 2 to the joint surface of the sintered compacts 11a and 11b is generally 50 to 90%, preferably about 60 to 80 o / o.
- the thickness of each of the sintered aluminum nitride plates 11a and "Ib" before joining is appropriately determined so that an AIN plate-like joined body having an intended thickness is obtained after joining.
- the sintered body plates 11a and 1b may have the same thickness or may have different thicknesses.In general, the thickness of the sintered body plate on which the semiconductor wafer is mounted is larger than that of the other side.
- the depth of the metal layer 2 from the surface of one of the sintered plates (the surface on which the wafer is placed) is 0.1 to 0.1% of the total thickness of the plate-like joined body.
- the thicknesses of the sintered plates 11a and 1-b it is preferable to determine the thicknesses of the sintered plates 11a and 1-b so that 50 ⁇
- the total thickness of the AIN plate-like joined body slightly varies depending on the application, but is preferably 1 to 10 Omm.
- the AIN plate-like joined body of the present invention includes the above-described aluminum nitride sintered body 1-1a, 1-b and the metal layer 2 interposed therebetween without using an adhesive. Interposed therebetween, which were joined Te cowpea two stage heating, which will be described later, because it is manufactured in this way has the following characteristics.
- the joining strength of the AINl plate-like joined body of the present invention can be evaluated based on the shear strength measured by Dicci X-star, and the 9.5 to 11.0 kgZmm 2 , especially 10.0 to 11.0 k gZmm 2 , between the sintered plate and the metal layer, 2.5 to 4.O g gZmm 2 , especially 3.0 to 4. is a gZmm 2.
- the bonded body is formed with such a high bonding strength, the number of interfaces with different materials is smaller than that of the bonded body manufactured using an adhesive (there is no adhesive layer). ) Therefore, it has the characteristic that the decrease in bonding strength due to the repetition history of heat is extremely small.
- the AIN plate-like joined body of the present invention has a joint surface between the metal layer 2 and the aluminum nitride sintered body after repeating the heat history by heating and cooling from 25 ° C. to 350 ° C. 100 times.
- the greatest feature of the AIN plate-like joined body of the present invention is that the warpage of the metal layer 2 is extremely small. As shown in FIG. 3, such a warp (W) of the metal layer 2 is caused by a line Z (—dashed line) connecting the end points of the metal layer 2 and a cut line perpendicular to the metal layer 2. And the maximum distance (R: m) between the end points and the distance between the end points (T; mm) is calculated by the following equation (2):
- the AIN plate-like joined body of the present invention exhibits such physical properties that such warpage is 5 to 25 / m / 1 Omm, particularly 10 to 20 ⁇ m10 mm.
- the joined body of the present invention since the warpage is reduced by a special joining technique described later, as shown in FIG. 2, the joined body is viewed from a side cross-section passing through the center O of the joined body.
- the direct bonding region where the sintered compact plates directly face each other at the interface P there are a plurality of pores having an average length L along the bonding interface of 0.5 to 4 m. It has a unique joint structure. That is, such pores are distributed throughout the direct bonding region, the length L does not have a size of 5 im or more, and the pores have a nearly spherical shape.
- the ratio (LZLp) of the length L along the bonding interface direction to the length Lp perpendicular to the bonding interface (LZLp) is 0.8 to 2, on average, especially 1.0. It is in the range of ⁇ 1.5.
- the sintered body plates 11 a and 11 b are partially non-joined, and For the side section, the following equation (1):
- Non-bonding rate Q (XZY) X 1 00 "-(1)
- X is a length of the non-bonded portion in a bonding interface direction represented by a total value of a length L of the vacancy present in the direct bonding region
- Y is the length of the direct bond region where the vacant L exists, and the non-junction rate Q is calculated as follows.
- the value is 0.1 to 0.5% on average, and is particularly preferable. Preferably it is in the range of 0.2 to 0.40 / 0.
- the size of the pores and the non-bonding rate can be measured by cutting the plate-like bonded body so that the side cross section appears, and observing the cut surface with an electron microscope.
- an AIN sintered plate is prepared in advance, and two AIN sintered plates are heated and joined without using an adhesive with a metal layer interposed therebetween. It is a remarkable feature that bonding is performed by heating in two stages. That is, the first-stage heat bonding is performed in a low-temperature region where the thermal expansion of the sintered body is relatively small, and in this case, partial co-sintering occurs between the sintered plates, and two sheets are formed. Is temporarily fixed. In addition, the subsequent second-stage heat bonding is performed in a higher temperature region than the first-stage heat bonding, and co-sintering proceeds further while the fixed state by the first-stage heat bonding is maintained. To form a firm joint.
- the joining interface has a degree of freedom during joining.
- the bonding interface is fixed at a relatively high temperature during the cooling process. Therefore, the joined body after cooling is easily distorted, and warpage occurs.
- the bonding interface has a degree of freedom at the time of bonding, it is easy for holes to move and deform, and large holes are unevenly distributed or collapsed in the plane direction (the length in the bonding interface direction). Large pores), the non-bonding rate Q described above becomes a fairly large value, and the bonding strength and the heat resistance hysteresis characteristics decrease.
- the AIN sintered body plate to be heat-bonded can be produced by a method known per se, for example, by mixing a firing powder composed of AIN powder with an organic binder and forming a granulated powder.
- a firing powder composed of AIN powder with an organic binder
- it can be produced by preparing a molding material such as a paste, molding this molding material into a sheet shape, removing the binder from the obtained green sheet, and firing it.
- an oxide of an alkaline earth metal such as Mg, Ca, or Sr or an oxide of a rare earth element such as Y may be added to the above-mentioned firing powder as a sintering aid. It can.
- the addition amount of such a sintering aid is usually 1% by weight or less, particularly 0.5% by weight or less.
- organic binder examples include, but are not limited to, polyvinyl butyral, polymethyl methacrylate, carboxymethyl cellulose, polyvinyl pyrrolidone, polyethylene glycol, polyethylene oxide, polyethylene, polypropylene, and ethylene glycol. Vinyl acetate copolymer, polystyrene, polyacrylic acid, etc. are used. Such an organic binder varies depending on the type thereof, but is generally used in an amount of 0.1 to 30 parts by weight per 100 parts by weight of the above-mentioned firing powder.
- a dispersant such as a long-chain hydrocarbon ether, a solvent such as toluene and ethanol, and a plasticizer such as phthalic acid can be used in appropriate amounts, if necessary.
- Production of a molding sheet (green sheet) using the molding material is performed by a known molding method such as an extrusion molding method, a doctor blade method, and a press molding method.
- Debinding is generally performed by heating the green sheet to about 300 to 900 ° C. in air, and firing is performed by removing the green sheet after debinding.
- the heating is performed in an active atmosphere (eg, in a nitrogen atmosphere) by heating to a temperature of 100 to 1900 ° C.
- the calcination time is usually such that the relative density by the Archimedes method is 980/0 or more. Just fine.
- the AIN sintered body plate obtained as described above enhances the adhesion between the metal layer 2 and the sintered plate, and has sufficient bonding strength by heat bonding performed without using an adhesive.
- the metal layer 2 is formed on one of the AIN1 sintered body plates 1-a and 1-1b produced as described above.
- the metal layer 2 can be formed, for example, from the above-described metal material to a predetermined thickness (20 m or less, particularly 5 to 15 / m) by means such as plating through a predetermined mask. Also, the metal layer 2 can be formed by applying a conductor paste in which a metal material is dispersed in an appropriate organic binder or an organic solvent in a predetermined pattern shape to the surface of the sintered body plate and baking the same.
- the two A 1 N sintered body plates (the one on which the metal layer 2 is formed) produced as described above are overlapped so that the metal layer 2 exists therebetween.
- the two-stage heat bonding is performed while pressing at a pressure of 5 to 00 kg / mm 2 , preferably 10 to 30 kcm 2 .
- This heat bonding can be performed in the air or in an inert atmosphere (nitrogen atmosphere), but is preferably performed in an inert atmosphere to prevent oxidation of the metal material.
- the first-stage heating bonding is performed at a temperature of 1650-1700 ° C, preferably 1650-1680 ° C, for 0.5-4 hours, preferably 1-2 hours.
- the heat bonding at this stage is performed in a low temperature region where the thermal expansion of the AIN sintered body is relatively small, and partial co-sintering between the sintered body plates is not performed. Then, the two sintered plates are temporarily fixed. Therefore, when the heat bonding is stopped at this stage, the shear strength in the region where the two sintered body plates are bonded to each other is usually quite low, about 1.0 to 4.0 O kg Zmm 2 .
- the intended AIN plate-like joined body can be obtained.
- the heating temperature at this time is more than 170 ° C. and not more than 180 ° C., preferably in the range of 170 ° C. to 179 ° C., and the heating time is 2 to 8 ° C. Hours, preferably 4 to 6 hours. That is, in the second-stage heating, co-sintering further proceeds to form a joint while the fixed state by the first-stage heat joining is maintained. For this reason, pores are distributed in a region where the two sintered compact plates are directly joined, and non-joined portions are generated by such pores.
- the heating temperature of the first stage is lower than the above range or the heating time is shorter than the above range, the temporary fixing becomes insufficient, so that many large vacancies are generated, and the non-bonding rate Q becomes low. It will increase the size, decrease the bonding strength and cause warpage.
- the heating time of the first step is longer than the above range, the metal forming the metal layer 2 diffuses into the sintered body plate, and the distribution of the metal layer 2 in the bonding plate becomes uneven. This makes it extremely unsuitable for use as an electrostatic chuck or plate heater used in semiconductor manufacturing equipment.
- the metal forming the metal layer 2 diffuses into the sintered body plate, and the distribution of the metal layer 2 becomes uneven.
- the second-stage heating temperature is lower than the above range, the growth of the co-sintered portion will be insufficient, and sufficient bonding strength will not be obtained. That is, in this case, naturally, the above-described non-bonding rate Q becomes an extremely large value.
- the heating time of the second stage is shorter than the above range, the growth of the co-sintered portion is insufficient.
- the heating time is longer than the above range, the warpage becomes large.
- the AIN plate-shaped joint plate of the present invention obtained by the two-stage joining as described above has no warpage, the metal layer is evenly distributed in the joint plate, and has a high joint strength and a high heat resistance history. Because it is excellent, it is extremely useful as an electrostatic chuck plate heater used in semiconductor manufacturing equipment.
- Non-bonding rate Q (%) ⁇ xl O O
- the distance (R: jU m) of the metal layer farthest from the line Z (dash-dotted line) connecting the end points of the metal layer was measured for each of the two cross sections of the AIN plate-like joint as shown in Fig. 3. This is obtained by the following equation (2) from the length between the end points (cutter: mm), The value was expressed as the reversal of the metal layer.
- a metal layer (thickness: 1.2 im) was formed in the order of Ti: 0.2 m and W: 1 m.
- the AIN sintered plate (SH-50) without the metal layer was stacked on the sintered plate with the metal layer formed above, so that the metal layer was on the inside, and the carbon sample jig was used. And fixed in a hot press furnace. Then, while applying a load of 300 kgf (pressure 23.9 kg / cm 2 ), hold in a nitrogen stream at 1650 ° C for 2 hours, and then raise the temperature to 1750 ° C in 10 ° CZ minutes. Hold for 4 hours. After cooling to room temperature, it was taken out of the furnace to obtain an AIN plate-like joined body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body.
- the warp W of the metal layer for this AIN plate assembly is 1 2 imZ1 Omm
- shear strength of the bonding interface is 3. 8 k gfZmm 2 at an interface containing a metal layer, metal free layer
- the value was 100 kgf mm 2
- the heat resistance hysteresis characteristic was 100 ⁇ 1 ⁇ 2.
- non-bonded ratio Q is 0. 2 ⁇ 1 ⁇ 2
- bonding average length of the interface direction of the holes is 1. 8 m
- the average of the length ratio LZL P of the pores is 1.1 Met.
- the AIN sintered plate on which the metal layer is not formed is stacked on the above AIN sintered plate so that the metal layer is on the inside, fixed with a carbon sample jig, and placed in a hot press furnace. I put it. Then, while applying a load of 20 tf (pressure 24.0 kgXcm 2 ) and maintaining the temperature at 1690 ° C for 2 hours in a nitrogen stream, the temperature was raised to 1790 ° C with a heating rate of 3 ° CZ for 4 hours. Hold for hours. After cooling to room temperature, it was taken out of the furnace to obtain an AIN plate-like joined body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body.
- the warp W of the metal layer for this AIN plate assembly is 1 7 jUmZ1 Omm, shear strength of the bonding interface, 3.
- the interface including a metal layer is 5 k gfZmm 2, not including the metal layer 1 O k gf at the interface (the interface where the sintered plates are directly bonded)
- the non-bonding rate Q is 0.2%, and the average length of the pores in the direction of the bonding interface is 2.
- a 4 ⁇ M, average length ratio LZL P of the pores is 1 was 2. Examples 3 to 5
- AIN plate-shaped joining was performed in the same manner as in Example 1, except that the AIN sintered plate having the same diameter and thickness as in Example 1 was used, and the heating joining conditions (holding temperature, holding time, load) were changed. Got a body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body.
- Example 2 On one side of the same AIN sintered plate as in Example 1, in the same manner as in Example 1,
- a metal layer composed of Ti (0.2 m) and W (9 m) was formed, and was the same as in Example 1. Heat bonding was performed under the conditions to obtain an AIN plate-like bonded body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body.
- the warp of the metal layer for this AIN plate bonded body, 1 9 ⁇ MZ1 Omm der Li, shear strength of the bonding interface is 3.
- 1 k gZmm 2 at an interface containing a metal layer include the metal layer At the non-existent interface (the interface where the sintered plates were directly bonded), the lO kgZ mm 2 was obtained, and the heat resistance hysteresis was 99 ⁇ 1 ⁇ 2.
- the non-bonding rate Q is 0.2%
- the average length of the holes in the direction of the bonding interface is 3.8 j «m
- the average value of the hole length ratio LZ and p is 1.
- An AIN sintered plate having a metal layer (TiZW) formed on one surface was produced in exactly the same manner as in Example 1.
- AIN- Y 2 0 3 slurry (AI New: 1 00 parts by weight, Upsilon 2 0 3 5 parts by weight of acrylic binder: 4 parts by weight, long-chain hydrocarbons (Hydrogen ether-based dispersant: 0.5 parts by weight) was applied as an adhesive, and the resultant was overlaid on the above-mentioned sintered plate on which the metal layer had been formed so that the metal layer was on the inside, and the product was made by Honbon It was fixed with a sample jig and placed in a hot press furnace.
- AI New 1 00 parts by weight
- Upsilon 2 0 3 5 parts by weight of acrylic binder 4 parts by weight
- long-chain hydrocarbons Hydrogen ether-based dispersant: 0.5 parts by weight
- the N-plate joint was clearly warped in a bowl shape visually.
- the measured warpage of the metal layer was 297 im / 1 Omm.
- the heat resistance history was 680/0.
- the non-bonding rate Q was calculated, it was 21.1%, the average of the lengths of the holes toward the bonding interface was 6.5 j «m, and the length ratio of the holes LZL P The average of was 4.8. Comparative Example 2
- AIN plate-like joining was performed in the same manner as in Comparative Example 1, except that the AIN sintered plate having the same diameter and thickness as in Example 1 was used, and the heating joining conditions (holding temperature, holding time, load) were changed. Got a body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body. Comparative Examples 3 to 9
- AIN plate-shaped joining was performed in the same manner as in Example 1, except that the AIN sintered plate having the same diameter and thickness as in Example 1 was used, and the heating joining conditions (holding temperature, holding time, and load) were changed. Got a body.
- Tables 1 and 2 show the manufacturing conditions and various characteristics of the AIN plate-like joined body.
- Example 1 0.02 ⁇ 40 ⁇ 6 0.4 1.2 57 1650 2 1750 4 0.3 23.9 Male 2 0.02 ⁇ 326 ⁇ 10 0.4 1.2 80 1690 2 1790 4 20 24.0
- Example 3 0.02 ⁇ 40 ⁇ 6 0.4 1.2 5f 1650 1 1750 2 0.3 23.9
- Example 4 0.02 ⁇ 40 ⁇ 6 0.4 1.2 57 1650 1 1750 8 0.3 23.9
- Example 5 0.02 ⁇ 40 ⁇ 6 0.4 1.2 57 1650 2 1750 4 1 79.6
- Example 6 0.02 ⁇ 40 ⁇ 6 0.4 9.2 57 1650 2 1750 4 0.3 23.9 Comparative example 1 0.02 ⁇ 40 ⁇ 6 0.4 1.2 57 Yes * 1 1650 2 1750 4 0.3 23.9 Comparative example 2 0.02 ⁇ 40 ⁇ 6 0.4 1.257 Yes * 1 1850 6 0.3 23.9 Comparative example 3 0.02 ⁇ 40 ⁇ 6 0.4 1.2 57 1750 6 0.3 23.9
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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EP04746090A EP1642876A4 (en) | 2003-06-13 | 2004-06-11 | ALUMINUM NITRIDE CONJUGATE BODY AND MANUFACTURING METHOD THEREFOR |
US10/560,159 US7488543B2 (en) | 2003-06-13 | 2004-06-11 | Aluminum nitride conjugate body and method of producing the same |
Applications Claiming Priority (2)
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JP2003169795 | 2003-06-13 | ||
JP2003-169795 | 2003-06-13 |
Publications (1)
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WO2004110957A1 true WO2004110957A1 (ja) | 2004-12-23 |
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PCT/JP2004/008584 WO2004110957A1 (ja) | 2003-06-13 | 2004-06-11 | 窒化アルミニウム接合体及びその製造方法 |
Country Status (6)
Country | Link |
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US (1) | US7488543B2 (ja) |
EP (1) | EP1642876A4 (ja) |
KR (1) | KR100716100B1 (ja) |
CN (1) | CN100381401C (ja) |
TW (1) | TWI267498B (ja) |
WO (1) | WO2004110957A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012071995A (ja) * | 2010-09-27 | 2012-04-12 | Taiheiyo Cement Corp | アルミナセラミックス接合体及びその製造方法 |
Families Citing this family (7)
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JP4773589B1 (ja) | 2010-06-15 | 2011-09-14 | 日本碍子株式会社 | 燃料電池セル |
JP4773588B1 (ja) | 2010-06-15 | 2011-09-14 | 日本碍子株式会社 | 燃料電池セル |
JP5669472B2 (ja) * | 2010-07-27 | 2015-02-12 | 三井金属鉱業株式会社 | セラミックス接合体の製造方法 |
US8684256B2 (en) * | 2011-11-30 | 2014-04-01 | Component Re-Engineering Company, Inc. | Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing |
CN105845613B (zh) * | 2015-01-16 | 2019-03-22 | 中芯国际集成电路制造(上海)有限公司 | 一种静电吸盘及其制造方法 |
KR102069423B1 (ko) * | 2017-12-19 | 2020-01-22 | 주식회사 티씨케이 | 접합 세라믹 및 이의 제조방법 |
US10882130B2 (en) * | 2018-04-17 | 2021-01-05 | Watlow Electric Manufacturing Company | Ceramic-aluminum assembly with bonding trenches |
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JP2001223256A (ja) * | 2000-02-08 | 2001-08-17 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
WO2003008359A1 (fr) * | 2001-07-19 | 2003-01-30 | Ibiden Co., Ltd. | Corps de connexion en ceramique, procede de connexion des corps en ceramique, et corps structurel en ceramique |
JP2003100580A (ja) * | 2002-05-27 | 2003-04-04 | Ngk Insulators Ltd | 半導体処理装置 |
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US4055451A (en) * | 1973-08-31 | 1977-10-25 | Alan Gray Cockbain | Composite materials |
JPH04324276A (ja) | 1991-04-24 | 1992-11-13 | Kawasaki Steel Corp | AlNセラミックヒータ及びその製造方法 |
JPH07504150A (ja) * | 1991-09-12 | 1995-05-11 | ザ・ダウ・ケミカル・カンパニー | 共焼上げ多層基材の製造方法 |
JP2783980B2 (ja) | 1994-09-01 | 1998-08-06 | 日本碍子株式会社 | 接合体およびその製造方法 |
JP3316167B2 (ja) * | 1996-10-08 | 2002-08-19 | 日本碍子株式会社 | 窒化アルミニウム質基材の接合体の製造方法およびこれに使用する接合助剤 |
JP3604888B2 (ja) * | 1997-01-30 | 2004-12-22 | 日本碍子株式会社 | 窒化アルミニウム質セラミックス基材の接合体、窒化アルミニウム質セラミックス基材の接合体の製造方法及び接合剤 |
CA2252113A1 (en) | 1997-10-29 | 1999-04-29 | Yoshihiko Numata | Substrate and process for producing the same |
JP4013386B2 (ja) * | 1998-03-02 | 2007-11-28 | 住友電気工業株式会社 | 半導体製造用保持体およびその製造方法 |
JP3512650B2 (ja) | 1998-09-30 | 2004-03-31 | 京セラ株式会社 | 加熱装置 |
US6490146B2 (en) * | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
EP1383168A1 (en) * | 2000-03-15 | 2004-01-21 | Ibiden Co., Ltd. | Method of producing electrostatic chucks and method of producing ceramic heaters |
CN100432024C (zh) * | 2003-10-31 | 2008-11-12 | 株式会社德山 | 氮化铝接合体及其制造方法 |
-
2004
- 2004-06-11 TW TW93116803A patent/TWI267498B/zh not_active IP Right Cessation
- 2004-06-11 EP EP04746090A patent/EP1642876A4/en not_active Withdrawn
- 2004-06-11 US US10/560,159 patent/US7488543B2/en not_active Expired - Fee Related
- 2004-06-11 CN CNB2004800165456A patent/CN100381401C/zh not_active Expired - Fee Related
- 2004-06-11 WO PCT/JP2004/008584 patent/WO2004110957A1/ja active Application Filing
- 2004-06-11 KR KR1020057023850A patent/KR100716100B1/ko not_active IP Right Cessation
Patent Citations (4)
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JPH11135906A (ja) * | 1997-10-29 | 1999-05-21 | Tokuyama Corp | 基板およびその製造方法 |
JP2001223256A (ja) * | 2000-02-08 | 2001-08-17 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
WO2003008359A1 (fr) * | 2001-07-19 | 2003-01-30 | Ibiden Co., Ltd. | Corps de connexion en ceramique, procede de connexion des corps en ceramique, et corps structurel en ceramique |
JP2003100580A (ja) * | 2002-05-27 | 2003-04-04 | Ngk Insulators Ltd | 半導体処理装置 |
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JP2012071995A (ja) * | 2010-09-27 | 2012-04-12 | Taiheiyo Cement Corp | アルミナセラミックス接合体及びその製造方法 |
Also Published As
Publication number | Publication date |
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US7488543B2 (en) | 2009-02-10 |
TW200503984A (en) | 2005-02-01 |
EP1642876A4 (en) | 2011-01-05 |
CN100381401C (zh) | 2008-04-16 |
CN1805911A (zh) | 2006-07-19 |
KR20060028407A (ko) | 2006-03-29 |
EP1642876A1 (en) | 2006-04-05 |
KR100716100B1 (ko) | 2007-05-09 |
US20060156528A1 (en) | 2006-07-20 |
TWI267498B (en) | 2006-12-01 |
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